hydrogen B-CMT
diffusion I-CMT
studies I-CMT
in O
Zr B-MAT
- O
based O
laves B-SPL
phase I-SPL
AB2 B-MAT
alloys B-DSC


the O
diffusion O
of O
hydrogen O
in O
the O
tetrahedral O
interstitials O
of O
bulk B-DSC
spherical I-DSC
laves B-SPL
phase I-SPL
Cr2Fe10Mn17Ni10VZr20 B-MAT
and O
ZrMn0.85Cr0.1V0.05Fe0.5Ni0.5+1wt B-MAT
% I-MAT
B I-MAT
alloys B-DSC
has O
been O
studied O
in O
the O
a-phase O
( O
solid B-DSC
- I-DSC
solution I-DSC
) O
region O
over O
the O
temperature O
range O
<nUm> O
– O
<nUm> O
° O
C O
, O
for O
hydrogen O
pressures O
up O
to O
100mbar O
using O
sieverts B-CMT
- I-CMT
type I-CMT
apparatus I-CMT
. O


the O
diffusion B-PRO
constants I-PRO
have O
been O
determined O
from O
the O
gas B-CMT
– I-CMT
solid I-CMT
reaction I-CMT
, O
where O
the O
gas O
pressure O
dependence O
on O
time O
has O
been O
measured O
at O
fixed O
temperature O
. O


the O
results O
have O
been O
discussed O
on O
the O
basis O
of O
fick B-CMT
's I-CMT
law I-CMT
of O
diffusion O
. O


the O
dependence O
of O
diffusion B-PRO
constant I-PRO
on O
alloy B-DSC
composition B-PRO
and O
initial O
pressure O
has O
been O
evaluated O
. O


activation B-PRO
energy I-PRO
has O
been O
obtained O
from O
the O
temperature O
dependence O
of O
diffusion O
using O
arrhenius B-CMT
relation I-CMT
. O


improving O
thermoelectric B-PRO
properties I-PRO
of O
p B-PRO
- I-PRO
type I-PRO
Bi2Te3 B-MAT
- O
based O
alloys B-DSC
by O
spark B-SMT
plasma I-SMT
sintering I-SMT


high O
- O
performance O
(Bi2Te3)x(Sb2Te3)1-x B-MAT
bulk B-DSC
materials O
were O
prepared O
by O
combining O
fusion B-SMT
technique I-SMT
with O
spark B-SMT
plasma I-SMT
sintering I-SMT
, O
and O
their O
thermoelectric B-PRO
properties I-PRO
were O
investigated O
. O


the O
electrical B-PRO
resistivity I-PRO
and O
seebeck B-PRO
coefficient I-PRO
increase O
greatly O
and O
the O
thermal B-PRO
conductivity I-PRO
decreases O
significantly O
with O
the O
increase O
of O
Bi2Te3 B-MAT
content O
, O
which O
leads O
to O
a O
great O
improvement O
in O
the O
thermoelectric B-PRO
figure I-PRO
of I-PRO
merit I-PRO
ZT I-PRO
. O


the O
maximum O
ZT B-PRO
value O
reaches O
<nUm> O
at O
<nUm> O
K O
for O
the O
composition B-PRO
of O
<nUm> B-MAT
% I-MAT
Bi2Te3-80 I-MAT
% I-MAT
Sb2Te3 I-MAT
with O
<nUm> O
% O
( O
mass O
fraction O
) O
excess O
Te B-MAT
. O


formation O
of O
Mg2Ni B-MAT
with O
enhanced O
kinetics B-PRO
: O
using O
H2Mg B-MAT
instead O
of O
Mg B-MAT
as O
a O
starting O
material O


At O
a O
temperature O
over O
the O
decomposition B-PRO
point I-PRO
( O
<nUm> O
° O
C 
) O
of O
H2Mg B-MAT
, O
the O
formation O
of O
Mg2Ni B-MAT
is O
greatly O
enhanced O
from O
the O
2MgH2+Ni B-MAT
system O
, O
as O
compared O
to O
the O
2Mg+Ni B-MAT
system O
. O


In O
support O
of O
this O
finding O
, O
in-situ O
observation O
of O
x-ray B-CMT
absorption I-CMT
fine O
structure O
of O
the O
two O
systems O
indicates O
that O
MgNi B-MAT
bonds O
form O
faster O
in O
the O
2MgH2+Ni B-MAT
system O
than O
in O
the O
2Mg+Ni B-MAT
system O
. O


furthermore O
, O
theoretical O
modeling O
also O
shows O
that O
Mg B-MAT
atoms O
are O
readily O
released O
from O
H2Mg B-MAT
using O
much O
less O
energy O
and O
thus O
are O
more O
available O
to O
react O
with O
Ni B-MAT
once O
the O
dehydrogenation B-SMT
of O
H2Mg B-MAT
occurs O
, O
as O
compared O
to O
normal O
Mg B-MAT
. O


construction O
of O
nanowire B-DSC
CH6I3NPb B-MAT
- O
based O
solar B-APL
cells I-APL
with O
<nUm> O
% O
efficiency B-PRO
by O
solvent B-SMT
etching I-SMT
technique O


1D B-DSC
nanowire I-DSC
CH6I3NPb B-MAT
thin B-DSC
films I-DSC
have O
been O
successfully O
constructed O
by O
solvent B-SMT
etching I-SMT
technique O
. O


the O
etching B-SMT
solution O
was O
consisted O
of O
a O
small O
amount O
of O
polar O
solvent O
in O
non-polar O
solvent O
, O
and O
the O
roughness B-PRO
of O
the O
film B-DSC
can O
be O
precisely O
controlled O
by O
the O
adding O
amount O
of O
polar O
solvent O
. O


A O
best O
and O
repeatable O
PCE B-PRO
of O
<nUm> O
% O
was O
achieved O
from O
the O
CH6I3NPb B-MAT
- O
based O
solar B-APL
cells I-APL
device I-APL
with O
nanowire B-DSC
film I-DSC
morphology B-PRO
and O
p-i-n B-PRO
structure I-PRO
. O


solvent B-SMT
etching I-SMT
process O
was O
an O
advanced O
technique O
for O
perovskite B-SPL
nanowire B-DSC
construction O
because O
of O
it O
's O
simple O
, O
universal O
and O
effective O
operation O
. O


analysis O
of O
reactions O
during O
sintering B-SMT
of O
CuO B-MAT
- O
doped B-DSC
3Y-TZP B-MAT
nano-powder B-DSC
composites I-DSC


3Y-TZP B-MAT
( O
yttria B-MAT
- O
doped B-DSC
tetragonal B-SPL
zirconia B-MAT
) O
and O
CuO B-MAT
nano B-DSC
powders I-DSC
were O
prepared O
by O
co-precipitation B-SMT
and O
copper B-MAT
oxalate I-MAT
complexation B-SMT
– I-SMT
precipitation I-SMT
techniques O
, O
respectively O
. O


during O
sintering B-SMT
of O
powder B-DSC
compacts O
( O
<nUm> O
mol O
% O
CuO B-MAT
- O
doped B-DSC
3Y-TZP B-MAT
) O
of O
this O
two O
- O
phase O
system O
several O
solid B-SMT
- I-SMT
state I-SMT
reactions I-SMT
clearly O
influence O
densification B-PRO
behaviour I-PRO
. O


these O
reactions O
were O
analysed O
by O
several O
techniques O
like O
XPS B-CMT
, O
DSC B-CMT
/ O
TGA B-CMT
and O
high B-CMT
- I-CMT
temperature I-CMT
XRD I-CMT
. O


A O
strong O
dissolution O
of O
CuO B-MAT
in O
the O
3Y-TZP B-MAT
matrix B-DSC
occurs O
below O
<nUm> O
° O
C O
, O
resulting O
in O
significant O
enrichment O
of O
CuO B-MAT
in O
a O
3Y-TZP B-MAT
grain B-PRO
- I-PRO
boundary I-PRO
layer I-PRO
with O
a O
thickness O
of O
several O
nanometres O
. O


this O
“ O
transient O
” O
liquid O
phase O
strongly O
enhances O
densification B-SMT
. O


around O
<nUm> O
° O
C O
a O
solid B-SMT
- I-SMT
state I-SMT
reaction I-SMT
between O
CuO B-MAT
and O
yttria B-MAT
as O
segregated O
to O
the O
3Y-TZP B-MAT
grain B-PRO
boundaries I-PRO
occurs O
, O
forming O
Cu2O5Y2 B-MAT
. O


this O
solid B-SMT
- I-SMT
state I-SMT
reaction I-SMT
induces O
the O
formation O
of O
the O
thermodynamic B-PRO
stable I-PRO
monoclinic B-SPL
zirconia B-MAT
phase O
. O


the O
formation O
of O
this O
solid B-DSC
phase I-DSC
also O
retards O
densification B-SMT
. O


using O
this O
knowledge O
of O
microstructural B-PRO
development O
during O
sintering B-SMT
it O
was O
possible O
to O
obtain O
a O
dense B-PRO
nano B-DSC
– I-DSC
nano I-DSC
composite I-DSC
with O
a O
grain B-PRO
size I-PRO
of O
only O
<nUm> O
nm O
after O
sintering B-SMT
at O
<nUm> O
° O
C O
. O


influence O
of O
Cu B-MAT
diffusion O
conditions O
on O
the O
switching O
of O
Cu B-MAT
– O
O2Si B-MAT
- O
based O
resistive B-APL
memory I-APL
devices I-APL


this O
paper O
presents O
a O
study O
of O
Cu B-MAT
diffusion O
at O
various O
temperatures O
in O
thin B-DSC
O2Si B-MAT
films B-DSC
and O
the O
influence O
of O
diffusion O
conditions O
on O
the O
switching O
of O
programmable B-APL
metallization I-APL
cell I-APL
( O
PMC B-APL
) O
devices O
formed O
from O
such O
Cu B-MAT
- O
doped B-DSC
films I-DSC
. O


film B-DSC
composition B-PRO
and O
diffusion O
products O
were O
analyzed O
using O
secondary B-CMT
ion I-CMT
mass I-CMT
spectroscopy I-CMT
, O
rutherford B-CMT
backscattering I-CMT
spectrometry I-CMT
, O
x-ray B-CMT
diffraction I-CMT
and O
raman B-CMT
spectroscopy I-CMT
methods O
. O


we O
found O
a O
strong O
dependence O
of O
the O
diffused O
Cu B-PRO
concentration I-PRO
, O
which O
varied O
between O
<nUm> O
at. O
% 
and O
10-3 O
at. O
% 
, O
on O
the O
annealing B-SMT
temperature O
. O


x-ray B-CMT
diffraction I-CMT
and O
raman B-CMT
studies O
revealed O
that O
Cu B-MAT
does O
not O
react O
with O
the O
O2Si B-MAT
network O
and O
remains O
in O
elemental O
form O
after O
diffusion O
for O
the O
annealing B-SMT
conditions O
used O
. O


PMC B-APL
resistive I-APL
memory I-APL
cells I-APL
were O
fabricated O
with O
such O
Cu B-MAT
- O
diffused O
O2Si B-MAT
films B-DSC
and O
device B-PRO
performance I-PRO
, O
including O
the O
stability B-PRO
of I-PRO
the I-PRO
switching I-PRO
voltage I-PRO
, O
is O
discussed O
in O
the O
context O
of O
the O
material O
characteristics O
. O


crystallographic B-PRO
phase I-PRO
evolution O
of O
ternary O
Zn B-MAT
– I-MAT
Ti I-MAT
– I-MAT
O I-MAT
nanomaterials B-DSC
during O
high B-SMT
- I-SMT
temperature I-SMT
annealing I-SMT
of O
OZn B-MAT
– O
O2Ti B-MAT
nanocomposites B-DSC


this O
study O
investigates O
the O
phase O
evolution O
of O
ternary O
Zn B-MAT
– I-MAT
Ti I-MAT
– I-MAT
O I-MAT
nanomaterials B-DSC
by O
high O
- O
temperature O
annealing B-SMT
of O
OZn B-MAT
– O
O2Ti B-MAT
core B-DSC
shell I-DSC
nanowires I-DSC
at O
<nUm> O
° O
C O
– O
<nUm> O
° O
C O
. O


scanning B-CMT
electron I-CMT
microscopy I-CMT
images O
show O
the O
surface B-PRO
morphology I-PRO
of O
the O
nanowires B-DSC
becomes O
rough O
with O
an O
increase O
in O
annealing B-SMT
temperature O
. O


moreover O
, O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
patterns O
and O
transmittance B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
analysis O
show O
that O
multiple O
Zn B-MAT
– I-MAT
Ti I-MAT
– I-MAT
O I-MAT
ternary O
compounds O
exist O
in O
the O
high O
- O
temperature O
annealed B-SMT
OZn B-MAT
– O
O2Ti B-MAT
nanocomposites B-DSC
. O


these O
are O
O4TiZn2 B-MAT
and O
O3TiZn B-MAT
. O


the O
nanowires B-DSC
annealed B-SMT
at O
<nUm> O
° O
C O
form O
hexagonal B-SPL
O3TiZn B-MAT
and O
cubic B-SPL
O4TiZn2 B-MAT
mixed O
phases O
. O


when O
the O
annealing B-SMT
temperature O
reaches O
<nUm> O
° O
C O
, O
a O
pure O
and O
efficient O
crystalline B-DSC
O4TiZn2 B-MAT
phase O
is O
obtained O
in O
the O
nanowires B-DSC
. O


the O
experimental O
results O
herein O
demonstrate O
that O
the O
annealing B-SMT
temperature O
is O
a O
substantial O
factor O
dominating O
the O
phase O
evolution O
of O
Zn B-MAT
– I-MAT
Ti I-MAT
– I-MAT
O I-MAT
ternary O
compounds O
in O
the O
solid B-SMT
- I-SMT
state I-SMT
reaction I-SMT
between O
the O
OZn B-MAT
core B-DSC
and O
O2Ti B-MAT
shell B-DSC
nanolayers I-DSC
. O


annealing B-SMT
influence O
over O
structural B-PRO
and O
optical B-PRO
properties I-PRO
of O
sprayed B-SMT
SSn B-MAT
thin B-DSC
films I-DSC


A O
systematic O
investigation O
of O
the O
effect O
of O
annealing B-SMT
temperature O
on O
the O
structural B-PRO
and O
opto B-PRO
- I-PRO
electrical I-PRO
properties I-PRO
of O
spray B-SMT
deposited I-SMT
SSn B-MAT
thin B-DSC
films I-DSC
has O
been O
presented O
. O


As O
received O
SnCl2*2H2O B-MAT
and O
thiourea O
were O
used O
for O
sn2+ O
and O
S2- O
ion O
sources O
, O
respectively O
in O
the O
solution O
without O
any O
complexing O
agent O
. O


following O
the O
deposition O
, O
films B-DSC
were O
annealed B-SMT
in O
a O
tubular O
quartz B-MAT
furnace O
at O
different O
temperature O
in O
the O
range O
of O
<nUm> O
– O
<nUm> O
° O
C O
for O
<nUm> O
min O
and O
cooled O
down O
to O
room O
temperature O
under O
flowing O
argon O
atmosphere O
. O


the O
surface B-PRO
morphology I-PRO
and O
crystallite B-PRO
size I-PRO
were O
modified O
by O
the O
annealing B-SMT
temperature O
. O


structural B-CMT
characterization I-CMT
revealed O
nano-crystalline B-DSC
nature O
of O
the O
deposited O
film B-DSC
. O


the O
XRD B-CMT
spectra O
showed O
deposited O
films B-DSC
were O
orthorhombic B-SPL
- O
SSn B-MAT
with O
preferential O
( O
<nUm> O
) O
orientation O
and O
better O
phase B-PRO
purity I-PRO
, O
which O
was O
further O
improved O
by O
increasing O
annealing B-SMT
temperature O
to O
<nUm> O
° O
C O
. O


the O
effect O
of O
annealing B-SMT
temperature O
on O
the O
optical B-PRO
and O
electrical B-PRO
properties I-PRO
of O
SSn B-MAT
films B-DSC
was O
also O
investigated O
using O
UV B-CMT
– I-CMT
vis I-CMT
spectroscopy I-CMT
, O
photo B-PRO
- I-PRO
electrochemical I-PRO
response I-PRO
and O
hall B-PRO
effect I-PRO
. O


the O
increase O
of O
annealing B-SMT
temperature O
up O
to O
<nUm> O
° O
C O
induced O
a O
substantial O
increase O
in O
the O
absorption B-PRO
coefficient I-PRO
and O
electrical B-PRO
conductivity I-PRO
. O


characterization O
of O
nano-structured B-DSC
W- B-MAT
, O
ti- B-MAT
, O
V- B-MAT
, O
and O
Zr B-MAT
- O
doped B-DSC
carbon B-MAT
films B-DSC


bonding B-PRO
structure I-PRO
of O
carbon B-MAT
and O
metal O
as O
well O
as O
nanostructural O
changes O
of O
metal B-PRO
- O
doped B-DSC
amorphous I-DSC
carbon B-MAT
films B-DSC
( O
a-C B-MAT
: I-MAT
me I-MAT
) O
were O
investigated O
depending O
on O
metal B-PRO
type O
( O
W B-MAT
, O
Ti B-MAT
, O
V B-MAT
, O
and O
Zr B-MAT
) O
, O
concentration O
( O
< O
25at. O
% O
) O
and O
annealing B-SMT
temperature O
( O
< O
1300K O
, O
except O
W O
: O
< O
2800K O
) O
. O


pure O
C B-MAT
films B-DSC
exhibit O
~ O
<nUm> O
nm O
distorted O
aromatic O
and O
graphene B-MAT
- O
like O
regions O
. O


both O
increase O
in O
size O
with O
annealing B-SMT
. O


after O
deposition O
the O
metals B-PRO
have O
carbide B-MAT
- O
like O
bonding B-PRO
and O
are O
mainly O
distributed O
atomically O
disperse O
in O
an O
amorphous B-DSC
environment O
. O


annealing B-SMT
leads O
to O
the O
formation O
of O
carbide B-MAT
crystallites B-DSC
( O
CTi B-MAT
, O
VC B-MAT
, O
CZr B-MAT
, O
WC B-MAT
, O
CW2 B-MAT
, O
and O
WC1-x B-MAT
) O
of O
several O
nanometers O
. O


the O
VC B-MAT
particles B-DSC
reach O
the O
largest O
size O
up O
to O
1300K O
. O


all O
metal B-PRO
dopings B-SMT
reduce O
the O
erosion B-PRO
rate I-PRO
against I-PRO
oxidation I-PRO
( O
expect O
V B-MAT
) O
and O
hydrogen O
impact O
. O


correlation O
between O
electrical B-PRO
, O
optical B-PRO
properties I-PRO
and O
ag2+ O
centers O
of O
OZn B-MAT
: I-MAT
Ag I-MAT
thin B-DSC
films I-DSC


OZn B-MAT
: I-MAT
Ag I-MAT
films B-DSC
have O
been O
fabricated O
on O
a O
n-Si B-MAT
( O
<nUm> O
) O
substrate B-DSC
and O
then O
annealed B-SMT
in O
situ O
in O
an O
O O
ambient O
, O
using O
Ag2O B-MAT
as O
a O
silver B-MAT
dopant O
by O
pulsed B-SMT
laser I-SMT
deposition I-SMT
. O


hall B-CMT
measurements I-CMT
reveal O
that O
the O
films B-DSC
prepared O
at O
<nUm> O
and O
<nUm> O
° O
C O
show O
p B-PRO
- I-PRO
type I-PRO
behavior I-PRO
with O
a O
hole B-PRO
concentration I-PRO
of O
<nUm> O
× O
<nUm> O
– O
<nUm> O
× O
<nUm> O
cm O
– 
<nUm> 
and O
a O
mobility B-PRO
of O
<nUm> O
– O
<nUm> O
cm2 O
/ 
vs 
. O


by O
combining O
hall B-CMT
measurements I-CMT
, O
electron B-CMT
paramagnetic I-CMT
resonance I-CMT
( O
EPR B-CMT
) O
signals O
, O
and O
photoluminescence B-CMT
( O
PL B-CMT
) O
spectra O
, O
a O
correlation O
is O
observed O
between O
the O
free B-PRO
hole I-PRO
carriers I-PRO
, O
the O
ag2+ O
centers O
, O
and O
the O
neutral B-PRO
acceptor I-PRO
bound I-PRO
excitons I-PRO
. O


additionally O
, O
the O
p-ZnO B-MAT
: I-MAT
Ag I-MAT
/ O
n-Si B-MAT
heterojunction B-DSC
shows O
a O
diode B-PRO
- I-PRO
like I-PRO
I I-PRO
– I-PRO
V I-PRO
characteristic I-PRO
. O


phase O
control O
in O
immiscible B-PRO
Zn-Bi B-MAT
alloy B-DSC
by O
tungsten B-MAT
nanoparticles B-DSC


immiscible B-PRO
Zn-Bi B-MAT
alloy B-DSC
has O
a O
good O
potential O
to O
replace O
lead B-MAT
- O
based O
alloys B-DSC
to O
serve O
as O
a O
running B-APL
layer I-APL
in O
plain B-APL
bearings I-APL
. O


however O
, O
it O
is O
still O
a O
major O
challenge O
to O
uniformly O
disperse O
Bi B-MAT
phase O
in O
Zn B-MAT
matrix B-DSC
during O
solidification B-SMT
processing I-SMT
since O
Bi B-MAT
droplets O
grow O
very O
fast O
in O
liquid O
state O
and O
readily O
coagulate O
to O
induce O
phase O
sedimentation O
. O


In O
this O
study O
, O
tungsten B-MAT
( O
W B-MAT
) O
nanoparticles B-DSC
were O
, O
for O
the O
first O
time O
, O
used O
and O
effectively O
incorporated O
into O
the O
Zn-Bi B-MAT
melt O
for O
phase O
control O
. O


tungsten B-MAT
nanoparticles B-DSC
were O
able O
to O
self O
- O
assemble O
onto O
the O
Zn-Bi B-MAT
phase O
interfaces B-DSC
to O
slow O
down O
the O
growth O
of O
the O
Bi B-MAT
phase O
and O
prevent O
their O
coagulations O
, O
resulting O
in O
a O
significant O
size O
reduction O
of O
the O
Bi B-MAT
phase O
and O
microstructure B-PRO
refinement O
. O


moreover O
, O
the O
incorporation O
of O
W B-MAT
nanoparticles B-DSC
into O
the O
Zn-Bi B-MAT
alloy B-DSC
enhanced O
its O
microhardness B-PRO
significantly O
. O


this O
new O
approach O
of O
using O
chemically B-PRO
- I-PRO
stable I-PRO
metal O
nanoparticles B-DSC
has O
a O
great O
potential O
for O
scale-up O
manufacturing O
of O
immiscible B-PRO
alloys B-DSC
for O
widespread O
applications O
. O


BeCl4Li2 B-MAT
and O
BeCl4Na2 B-MAT
: O
two O
olivine B-SPL
- O
type O
chlorides O


BeCl4Li2 B-MAT
and O
BeCl4Na2 B-MAT
, O
the O
only O
ternary O
compounds O
in O
the O
systems O
MIClBeCl2 B-MAT
( I-MAT
MI I-MAT
= I-MAT
Li I-MAT
, I-MAT
Na I-MAT
) I-MAT
, O
are O
reinvestigated O
by O
x-ray B-CMT
, O
IR B-CMT
, O
and O
raman B-CMT
methods I-CMT
. O


both O
compounds O
are O
not O
polymorphic O
. O


they O
crystallize O
in O
the O
olivine B-SPL
structure O
( O
a B-PRO
= O
<nUm> O
, O
b B-PRO
= O
<nUm> O
, O
and O
c B-PRO
= O
<nUm> O
and O
a B-PRO
= O
<nUm> O
, O
b B-PRO
= O
<nUm> O
, O
and O
c B-PRO
= O
<nUm> O
pm O
, O
respectively O
) O
, O
as O
shown O
from O
vibrational B-CMT
spectra I-CMT
, O
x-ray B-CMT
intensity I-CMT
calculations I-CMT
, O
and O
the O
relation O
of O
the O
unit B-PRO
- I-PRO
cell I-PRO
dimensions I-PRO
, O
which O
is O
<nUm> O
: O
<nUm> O
: O
<nUm> O
for O
olivine B-SPL
- O
type O
compounds O
within O
a O
narrow O
range O
. O


ultraviolet O
electroluminescence B-CMT
at O
room O
temperature O
from O
a O
pn B-APL
junction I-APL
of O
heteroepitaxial B-DSC
diamond B-MAT
film B-DSC
by O
CVD B-CMT


the O
ultraviolet B-PRO
emission I-PRO
from O
a O
pn B-APL
junction I-APL
of O
heteroepitaxial B-DSC
diamond B-MAT
film B-DSC
was O
investigated O
. O


diamond B-MAT
films B-DSC
were O
deposited O
on O
Si(100) B-MAT
by O
microwave B-SMT
plasma I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
. O


B B-MAT
- O
doped B-DSC
and O
P B-MAT
- O
doped B-DSC
layers I-DSC
were O
formed O
by O
trimethylboron O
and O
phosphine O
as O
impurity O
source O
gasses O
. O


the O
properties O
of O
p- B-PRO
and O
n B-PRO
- I-PRO
type I-PRO
layers B-DSC
were O
characterized O
by O
SEM B-CMT
, O
SIMS B-CMT
, O
raman B-CMT
spectroscopy I-CMT
and O
hall B-CMT
measurements I-CMT
. O


the O
experimental O
results O
showed O
that O
the O
current B-PRO
– I-PRO
voltage I-PRO
( I-PRO
I I-PRO
– I-PRO
V I-PRO
) I-PRO
characteristics I-PRO
of O
the O
pn B-APL
junction I-APL
exhibited O
good O
rectifying B-PRO
properties I-PRO
. O


A O
sharp O
emission B-PRO
peak I-PRO
at O
<nUm> O
nm O
was O
observed O
at O
<nUm> O
V O
for O
<nUm> O
mA O
at O
room O
temperature O
. O


broad O
a-band B-PRO
emission I-PRO
in O
the O
visible O
region O
also O
appeared O
simultaneously O
. O


the O
results O
obtained O
are O
discussed O
in O
detail O
. O


optimization O
of O
processing O
parameters O
on O
the O
controlled O
growth O
of O
OZn B-MAT
nanorod B-DSC
arrays I-DSC
for O
the O
performance O
improvement O
of O
solid B-APL
- I-APL
state I-APL
dye I-APL
- I-APL
sensitized I-APL
solar I-APL
cells I-APL


high O
- O
transparency B-PRO
and O
high O
quality O
OZn B-MAT
nanorod B-DSC
arrays I-DSC
were O
grown O
on O
the O
ITO B-MAT
substrates B-DSC
by O
a O
two B-SMT
- I-SMT
step I-SMT
chemical I-SMT
bath I-SMT
deposition I-SMT
( O
CBD B-SMT
) O
method O
. O


the O
effects O
of O
processing O
parameters O
including O
reaction O
temperature O
( O
<nUm> O
– O
<nUm> O
° O
C O
) O
and O
solution O
concentration O
( O
<nUm> O
– O
<nUm> O
m O
) O
on O
the O
crystal O
growth O
, O
alignment B-PRO
, O
optical B-PRO
and O
electrical B-PRO
properties I-PRO
were O
systematically O
investigated O
. O


it O
has O
been O
found O
that O
these O
process O
parameters O
are O
critical O
for O
the O
growth O
, O
orientation O
and O
aspect O
ratio O
of O
the O
nanorod B-DSC
arrays I-DSC
, O
showing O
different O
structural B-PRO
and O
optical B-PRO
properties I-PRO
. O


experimental O
results O
reveal O
that O
the O
hexagonal B-SPL
OZn B-MAT
nanorod B-DSC
arrays I-DSC
prepared O
under O
reaction O
temperature O
of O
<nUm> O
° O
C O
and O
solution O
concentration O
of O
<nUm> O
m O
possess O
highest O
aspect O
ratio O
of O
∼ O
<nUm> O
, O
and O
show O
the O
well O
- O
aligned O
orientation O
and O
optimum O
optical B-PRO
properties I-PRO
. O


moreover O
the O
OZn B-MAT
nanorod B-DSC
arrays I-DSC
based O
heterojunction B-APL
electrodes I-APL
and O
the O
solid B-APL
- I-APL
state I-APL
dye I-APL
- I-APL
sensitized I-APL
solar I-APL
cells I-APL
( O
SS B-APL
- I-APL
DSSCs I-APL
) O
were O
fabricated O
with O
an O
improved O
optoelectrical B-PRO
performance I-PRO
. O


thermal B-APL
barrier I-APL
coating I-APL
of O
lanthanum B-MAT
– O
zirconium B-MAT
– O
cerium B-MAT
composite B-DSC
oxide B-MAT
made O
by O
electron B-SMT
beam I-SMT
- I-SMT
physical I-SMT
vapor I-SMT
deposition I-SMT


lanthanum B-MAT
– O
zirconium B-MAT
– O
cerium B-MAT
composite B-DSC
oxide B-MAT
( O
Ce3La10O35Zr7 B-MAT
, O
LZ7C3 B-MAT
) O
as O
a O
candidate O
material O
for O
thermal B-APL
barrier I-APL
coatings I-APL
( O
TBCs B-APL
) O
was O
prepared O
by O
electron B-SMT
beam I-SMT
- I-SMT
physical I-SMT
vapor I-SMT
deposition I-SMT
( O
EB B-SMT
- I-SMT
PVD I-SMT
) O
. O


the O
composition B-PRO
, O
crystal B-PRO
structure I-PRO
, O
thermophysical B-PRO
properties I-PRO
, O
surface B-PRO
and O
cross-sectional B-PRO
morphologies I-PRO
and O
cyclic B-PRO
oxidation I-PRO
behavior I-PRO
of O
the O
LZ7C3 B-MAT
coating B-APL
were O
studied O
. O


the O
results O
indicated O
that O
LZ7C3 B-MAT
has O
a O
high O
phase B-PRO
stability I-PRO
between O
298K O
and O
1573K O
, O
and O
its O
linear O
thermal B-PRO
expansion I-PRO
coefficient I-PRO
( O
TEC B-PRO
) O
is O
similar O
to O
that O
of O
zirconia B-MAT
containing I-MAT
8wt I-MAT
% I-MAT
yttria I-MAT
( O
8YSZ B-MAT
) O
. O


the O
thermal B-PRO
conductivity I-PRO
of O
LZ7C3 B-MAT
is O
<nUm> O
Wm-1K-1 O
at O
1273K O
, O
which O
is O
almost O
<nUm> O
% O
lower O
than O
that O
of O
8YSZ B-MAT
. O


the O
deviation O
of O
coating B-APL
composition B-PRO
from O
the O
ingot B-DSC
can O
be O
overcome O
by O
the O
addition O
of O
excess O
CeO2 B-MAT
and O
O2Zr B-MAT
during O
ingot B-DSC
preparation O
or O
by O
adjusting O
the O
process O
parameters O
. O


the O
failure B-PRO
of O
the O
LZ7C3 B-MAT
coating B-APL
is O
mainly O
a O
result O
of O
the O
occurrence O
of O
micro-cracks O
inside O
ceramic B-DSC
topcoat B-APL
, O
which O
cause O
the O
abnormal O
oxidation B-SMT
of O
bond B-APL
coat I-APL
. O


degradation B-PRO
reduction O
and O
stability B-PRO
enhancement O
of O
p B-PRO
- I-PRO
type I-PRO
graphene B-MAT
by O
Cl3Rh B-MAT
doping B-SMT


three O
dopants O
, O
HNO3 O
, O
AuCl3 B-MAT
, O
and O
Cl3Rh B-MAT
have O
been O
employed O
to O
fabricate O
p B-PRO
- I-PRO
type I-PRO
graphene B-MAT
layers B-DSC
with O
varying O
doping B-PRO
concentration I-PRO
and O
subsequently O
compare O
their O
structural B-PRO
, O
optical B-PRO
, O
and O
electrical B-PRO
properties I-PRO
. O


by O
Cl3Rh B-MAT
doping B-SMT
, O
the O
sheet B-PRO
resistance I-PRO
is O
most O
stable O
as O
time O
elapses O
and O
the O
raman B-PRO
frequency I-PRO
/ O
work B-PRO
function I-PRO
( O
thus O
dirac B-PRO
point I-PRO
) O
are O
most O
doping O
- O
sensitive O
without O
big O
degradation O
of O
transmittance B-PRO
and O
hole B-PRO
mobility I-PRO
. O


the O
CC B-PRO
/ I-PRO
CC I-PRO
bonds I-PRO
intensity I-PRO
ratio I-PRO
( O
ICC B-PRO
/ O
ICC B-PRO
) O
in O
the O
C B-MAT
1s O
x-ray B-CMT
photoelectron I-CMT
spectra O
increases O
in O
all O
doped B-DSC
samples O
with O
the O
change O
being O
largest O
by O
Cl3Rh B-MAT
doping O
, O
another O
evidence O
for O
the O
p B-PRO
- I-PRO
type I-PRO
doping O
by O
electron O
transfer O
from O
graphene B-MAT
sheets B-DSC
to O
the O
adsorbates O
. O


the O
largest O
ICC B-PRO
/ I-PRO
ICC I-PRO
ratio I-PRO
may O
indicate O
the O
C B-MAT
atoms O
are O
most O
fully O
double O
- O
bonded O
even O
though O
a O
lot O
of O
electrons O
are O
leaked O
out O
from O
graphene B-MAT
, O
thereby O
making O
the O
graphene B-MAT
layer B-DSC
least O
defective O
, O
consistent O
with O
the O
minimized O
reduction O
of O
the O
transmittance B-PRO
and O
the O
hole B-PRO
mobility I-PRO
by O
Cl3Rh B-MAT
doping O
. O


interaction O
of O
yttrium B-MAT
disilicate I-MAT
environmental B-APL
barrier I-APL
coatings I-APL
with O
calcium-magnesium-iron B-MAT
alumino-silicate I-MAT
melts O


reactions O
between O
molten O
calcium-magnesium-iron B-MAT
alumino-silicate I-MAT
( O
CMFAS B-MAT
) O
deposits O
and O
yttrium B-MAT
disilicate I-MAT
( O
O7Si2Y2 B-MAT
, O
YDS B-MAT
) O
based O
environmental B-APL
barrier I-APL
coatings I-APL
( O
EBC B-APL
) O
on O
CSi B-MAT
/ O
CSi B-MAT
ceramic B-DSC
matrix I-DSC
composites I-DSC
( O
CMCs B-DSC
) O
were O
investigated O
at O
<nUm> O
° O
C O
. O


the O
coating B-APL
readily O
dissolves O
into O
the O
melt O
from O
which O
an O
apatite B-SPL
phase O
, O
nominally O
CaO13Si3Y4 B-MAT
, O
precipitates B-DSC
. O


these O
reactions O
are O
sufficiently O
fast O
to O
consume O
the O
majority O
of O
the O
approximately O
<nUm> O
mm O
thick O
coating B-APL
in O
<nUm> O
h O
. O


liquid B-SMT
phase I-SMT
separation I-SMT
, O
producing O
an O
essentially O
pure O
O2Si B-MAT
second O
phase O
, O
occurs O
near O
the O
reaction O
front O
suggesting O
dissimilar O
rates O
of O
CaO B-MAT
and O
O2Si B-MAT
exchange O
with O
the O
overlaying O
deposit O
. O


the O
rise O
of O
large O
bubbles O
through O
the O
melt O
above O
the O
coatings B-APL
appears O
to O
disrupt O
the O
reaction O
layer O
and O
distributes O
apatite B-MAT
throughout O
the O
residual O
deposit O
. O


channel O
cracks O
were O
found O
in O
the O
deposits O
and O
the O
reaction O
layers B-DSC
; O
after O
longer O
exposures O
, O
the O
cracks O
branch O
and O
extend O
laterally O
through O
the O
Si B-MAT
bond B-APL
coat I-APL
and O
into O
the O
underlying O
CMC B-DSC
. O


complementary O
experiments O
performed O
on O
monolithic B-DSC
YDS B-MAT
pellets B-DSC
yielded O
long O
- O
term O
recession B-PRO
rates I-PRO
similar O
to O
those O
of O
the O
coatings B-APL
, O
although O
some O
differences O
were O
evident O
in O
recession B-PRO
rates I-PRO
and O
reaction O
layer B-DSC
morphologies B-PRO
in O
the O
early O
stages O
. O


thermodynamic B-CMT
calculations I-CMT
were O
used O
to O
understand O
the O
evolving O
driving O
force O
for O
the O
YDS B-MAT
- O
to O
- O
apatite B-MAT
conversion O
. O


the O
agreement O
between O
the O
simulated O
and O
experimentally O
observed O
behaviors O
suggests O
that O
such O
calculations O
could O
be O
used O
to O
predict O
the O
influence O
of O
temperature O
and O
deposit O
composition B-PRO
on O
EBC B-APL
degradation O
. O


non-radiative B-PRO
sub-microsecond I-PRO
recombination I-PRO
of O
excited O
er3+ O
ions O
in O
O2Si B-MAT
sensitized O
with O
Si B-MAT
nanocrystals B-DSC


temporal O
aspects O
of O
recombination O
and O
energy B-PRO
transfer I-PRO
processes I-PRO
in O
Er B-MAT
- O
doped B-DSC
O2Si B-MAT
sensitized O
with O
Si B-MAT
nanocrystals B-DSC
( O
si-nc B-MAT
's O
) O
were O
investigated O
by O
luminescence B-CMT
and O
excitation B-CMT
spectroscopy I-CMT
using O
time B-CMT
- I-CMT
correlated I-CMT
photon I-CMT
counting I-CMT
. O


this O
detection O
mode O
allows O
that O
emissions O
of O
very O
different O
intensities O
and O
dynamics O
may O
be O
investigated O
simultaneously O
, O
without O
loss O
of O
time O
resolution O
or O
amplitude O
deformation O
. O


In O
this O
way O
, O
components O
with O
decay B-PRO
constants I-PRO
ranging O
from O
nano- O
to O
milliseconds O
were O
identified O
in O
the O
luminescence B-CMT
bands O
of O
si-nc B-MAT
's O
, O
er3+ O
ions O
, O
and O
defects O
. O


we O
postulate O
to O
relate O
these O
to O
recombination B-PRO
processes I-PRO
originating O
from O
isolated O
er3+ O
ions O
and O
er3+ O
ions O
located O
inside O
or O
in O
direct O
vicinity O
of O
si-nc B-MAT
's O
, O
with O
dynamics O
in O
the O
milli- O
and O
microsecond O
, O
and O
nanosecond O
range O
, O
respectively O
. O


In O
this O
way O
, O
a O
unique O
picture O
of O
the O
mutual O
relation O
between O
the O
two O
subsystems O
of O
er3+ O
ions O
and O
si-nc B-MAT
's O
, O
and O
truly O
microscopic O
information O
on O
the O
sensitization B-PRO
effect I-PRO
is O
obtained O
. O


based O
on O
this O
new O
information O
, O
we O
conclude O
on O
a O
strong O
enhancement O
of O
non-radiative B-PRO
recombination I-PRO
of O
er3+ O
upon O
sensitization O
with O
si-nc B-MAT
's O
and O
put O
forward O
a O
complete O
description O
of O
si-nc B-MAT
's O
as O
sensitizers O
of O
O2Si B-MAT
: I-MAT
Er I-MAT
system O
, O
where O
all O
the O
er3+ O
ions O
available O
in O
the O
system O
are O
accounted O
for O
. O


the O
correlation O
between O
weakest O
configurations O
and O
yield B-PRO
strength I-PRO
of O
Zr B-MAT
- O
based O
metallic B-PRO
glasses B-DSC


A O
direct O
relationship O
between O
the O
yield B-PRO
strength I-PRO
and O
the O
atomic B-PRO
ratio I-PRO
of O
solvent O
( O
Zr B-MAT
) O
atoms O
in O
the O
Zr-Cu-Al-Ni B-MAT
metallic B-PRO
glasses B-DSC
system O
is O
firstly O
uncovered O
. O


it O
is O
found O
that O
either O
shear B-PRO
modulus I-PRO
or O
yield B-PRO
strength I-PRO
decreases O
almost O
nearly O
with O
the O
increase O
in O
atomic B-PRO
ratio I-PRO
of I-PRO
Zr I-PRO
. O


the O
origin O
of O
this O
relationship O
is O
ascribed O
to O
the O
preferential O
straining O
of O
the O
weakest O
configurations O
, O
which O
consist O
of O
the O
solvent O
- O
solvent O
bonds O
and O
the O
free O
volume O
concentrated O
in O
them O
. O


it O
is O
suggested O
that O
a O
higher O
atomic B-PRO
ratio I-PRO
of I-PRO
Zr I-PRO
corresponds O
to O
a O
larger O
amount O
of O
weakest O
configurations O
, O
which O
will O
facilitate O
the O
activation O
and O
the O
accumulation O
of O
the O
shear O
transformations O
and O
finally O
results O
in O
the O
lower O
yield B-PRO
strength I-PRO
. O


this O
finding O
may O
provide O
an O
effective O
strategy O
for O
designing O
high B-PRO
- I-PRO
strength I-PRO
metallic I-PRO
glasses B-DSC
by O
modifying O
the O
chemical B-PRO
composition I-PRO
. O


perpendicular O
coercive B-PRO
force I-PRO
of O
thick O
BCoFe B-MAT
thin B-DSC
films I-DSC
grown O
on O
silicon B-MAT
substrate B-DSC


the O
room O
- O
temperature O
magnetic B-PRO
properties I-PRO
of O
BCoFe B-MAT
thin B-DSC
films I-DSC
grown O
on O
silicon B-MAT
substrate B-DSC
were O
investigated O
. O


large O
perpendicular O
coercive B-PRO
forces I-PRO
in O
BCoFe B-MAT
thin B-DSC
films I-DSC
with O
thickness O
up O
to O
<nUm> O
nm O
were O
observed O
. O


the O
value O
of O
the O
perpendicular O
coercive B-PRO
force I-PRO
is O
<nUm> O
Oe O
as O
the O
thickness O
of O
the O
BCoFe B-MAT
layer B-DSC
is O
<nUm> O
nm O
. O


the O
large O
perpendicular O
coercive B-PRO
force I-PRO
indicates O
the O
presence O
of O
intrinsic O
perpendicular O
magnetic B-PRO
anisotropy I-PRO
in O
thick O
BCoFe B-MAT
layer B-DSC
with O
thickness O
up O
to O
<nUm> O
nm O
, O
which O
originates O
from O
( O
<nUm> O
) O
texture O
in O
BCoFe B-MAT
layer B-DSC
. O


the O
strength O
of O
perpendicular O
magnetic B-PRO
anisotropy I-PRO
of O
BCoFe B-MAT
depends O
on O
annealing B-SPL
temperature O
. O


non-isothermal B-CMT
kinetics I-CMT
study I-CMT
with O
isoconversional B-CMT
procedure I-CMT
and O
DAEM B-CMT
: O
thermal O
decomposition O
of O
LaO4P B-MAT
: I-MAT
Ce,Tb*0.5H2O I-MAT


the O
precursor O
, O
La0.9Ce0.05Tb0.05PO4*0.5H2O B-MAT
was O
synthesized O
via O
solid B-SMT
- I-SMT
state I-SMT
reaction I-SMT
at O
<nUm> O
K O
. O


the O
experimental O
results O
show O
that O
the O
synthesized O
product O
is O
orthorhombic B-SPL
La0.9Ce0.05Tb0.05PO4*0.5H2O B-MAT
, O
and O
monoclinic B-SPL
CeLa18O80P20Tb B-MAT
is O
a O
green B-APL
emitting I-APL
phosphor I-APL
which O
can O
be O
obtained O
after O
calcining B-SMT
La0.9Ce0.05Tb0.05PO4*0.5H2O B-MAT
at O
<nUm> O
K O
in O
air O
. O


based O
on O
the O
iterative B-CMT
isoconversional I-CMT
procedure I-CMT
, O
the O
values O
of O
activation B-PRO
energy I-PRO
ea I-PRO
associated O
with O
the O
region O
I O
and O
region O
II O
of O
the O
thermal O
decomposition O
of O
the O
precursor O
were O
obtained O
, O
which O
demonstrates O
that O
the O
region O
II O
is O
a O
kinetically O
complex O
process O
, O
and O
the O
region O
I O
is O
a O
single O
- O
step O
kinetic O
process O
and O
can O
be O
described O
by O
a O
unique O
kinetic O
triplet O
[ O
ea B-PRO
, O
A B-PRO
and O
g(a) B-PRO
] O
. O


the O
most O
probable O
reaction O
mechanism O
of O
the O
region O
I O
was O
estimated O
by O
the O
comparison O
between O
experimental O
plots O
and O
modeled O
results O
. O


the O
value O
of O
pre-exponential B-PRO
factor I-PRO
A I-PRO
of O
the O
region O
I O
was O
obtained O
on O
the O
basis O
of O
ea B-PRO
and O
the O
reaction O
mechanism O
. O


the O
distributed B-CMT
activation I-CMT
energy I-CMT
model I-CMT
( O
DAEM B-CMT
) O
was O
applied O
to O
study O
the O
region O
II O
. O


formation O
of O
the O
ErSi2 B-MAT
phase O
and O
the O
associated O
fractal O
pattern O
on O
the O
Si B-MAT
surface B-DSC
upon O
high B-SMT
current I-SMT
Er I-SMT
- I-SMT
ion I-SMT
implantation I-SMT


using O
a O
metal O
vapor O
vacuum O
arc O
ion O
source O
, O
plain O
and O
continuous O
ErSi2 B-MAT
layers B-DSC
of O
good O
crystalline B-PRO
structure I-PRO
were O
formed O
on O
Si B-MAT
surfaces B-DSC
by O
high B-SMT
current I-SMT
Er I-SMT
- I-SMT
ion I-SMT
implantation I-SMT
. O


interestingly O
, O
under O
some O
specific O
conditions O
, O
the O
formed O
ErSi2 B-MAT
grains O
organized O
themselves O
in O
a O
fractal O
pattern O
featuring O
self O
- O
similarity O
. O


the O
mechanism O
of O
the O
ErSi2 B-MAT
formation O
as O
well O
as O
the O
growth O
of O
the O
fractal O
pattern O
was O
discussed O
in O
terms O
of O
the O
dynamic O
launching O
of O
energetic O
Er B-MAT
ions O
into O
Si B-MAT
, O
beam B-SMT
heating I-SMT
effect O
, O
and O
the O
effect O
of O
ion O
fluence O
during O
the O
high B-SMT
current I-SMT
Er I-SMT
- I-SMT
ion I-SMT
implantation I-SMT
of O
far-from-equilibrium O
. O


jahn B-PRO
- I-PRO
teller I-PRO
effect I-PRO
in O
the O
LaSrCuO B-MAT
superconductor B-PRO


the O
CuO6 B-MAT
octahedron O
in O
the O
T B-SPL
structure O
of O
the O
LaSrCuO B-MAT
superconductor B-PRO
is O
considered O
within O
the O
quasi-molecular B-CMT
approximation I-CMT
in O
order O
to O
calculate O
the O
electronic B-PRO
structure I-PRO
and O
the O
vibrational B-PRO
modes I-PRO
that O
could O
participate O
in O
the O
jahn B-PRO
- I-PRO
teller I-PRO
effect I-PRO
. O


the O
electronic B-CMT
calculations I-CMT
are O
made O
within O
the O
extended B-CMT
huckel I-CMT
model I-CMT
and O
the O
vibrations B-PRO
are O
taken O
from O
previously O
reported O
results O
. O


once O
the O
electronic B-PRO
and O
vibrational B-PRO
participants I-PRO
are O
determined O
using O
group B-CMT
theory I-CMT
analysis I-CMT
, O
the O
intensity O
of O
the O
electron B-PRO
- I-PRO
phonon I-PRO
interaction I-PRO
is O
calculated O
to O
establish O
the O
jahn B-PRO
- I-PRO
teller I-PRO
deformation I-PRO
. O


rapid O
H+ B-PRO
conductivity I-PRO
in O
hydrogen B-MAT
uranyl I-MAT
phosphate-A I-MAT
solid B-APL
H+ I-APL
electrolyte I-APL


we O
have O
found O
that O
the O
layered B-DSC
hydrate O
HO6PU B-MAT
. I-MAT


4H2O B-MAT
is O
a O
rapid O
proton B-PRO
conductor I-PRO
. O


the O
room O
temperature O
conductivity B-PRO
of O
<nUm> O
× O
10-3 O
ohm-1cm-1 O
is O
higher O
than O
that O
of O
na+ O
in O
β B-SPL
alumina B-MAT
. O


the O
activation B-PRO
energy I-PRO
is O
<nUm> O
± O
<nUm> O
kJ O
mol-1 
. O


the O
material O
is O
insoluble B-PRO
, O
and O
presses O
into O
transluscent B-PRO
discs B-DSC
suitable O
for O
solid B-APL
electrolyte I-APL
applications I-APL
. O


A O
robust O
design O
of O
Ru B-MAT
quantum B-DSC
dot I-DSC
/ O
N O
- O
doped B-DSC
holey I-DSC
graphene B-MAT
for O
efficient O
Li B-APL
– I-APL
O I-APL
batteries I-APL


herein O
, O
we O
report O
a O
simple O
, O
versatile O
, O
defect O
- O
engineered O
method O
to O
fabricate O
Ru B-MAT
quantum B-DSC
dots I-DSC
( O
Ru B-MAT
QDs B-DSC
) O
uniformly O
anchored O
on O
a O
nitrogen O
- O
doped B-DSC
holey I-DSC
graphene B-MAT
( O
NHG B-MAT
) O
monolith B-DSC
. O


it O
uses O
in O
situ O
pyrolysis B-SMT
of O
mixed O
glucose O
, O
dicyandiamide O
( O
DCDA O
) O
, O
and O
Cl3Ru B-MAT
, O
followed O
by O
an O
acid B-SMT
treatment I-SMT
, O
and O
a O
final O
heat B-SMT
treatment I-SMT
to O
introduce O
in-plane O
holes O
of O
various O
sizes O
. O


A O
novel O
transmission O
method O
in O
scanning B-CMT
electron I-CMT
microscopy I-CMT
was O
successfully O
implemented O
to O
directly O
visualize O
the O
holes O
with O
color O
contrast O
. O


A O
low O
accelerating O
voltage O
of O
<nUm> O
kV O
enabled O
prolonged O
observation O
without O
significant O
electron B-SMT
beam I-SMT
damage I-SMT
. O


the O
mechanisms O
of O
hole O
creation O
were O
examined O
in O
detail O
using O
various O
characterization O
techniques O
as O
well O
as O
control O
experiments O
. O


the O
Ru B-MAT
QDs B-DSC
had O
significant O
catalytic B-PRO
activity I-PRO
and O
resulted O
in O
larger O
in-plane O
holes O
through O
the O
graphene B-MAT
sheets B-DSC
. O


the O
mechanical B-PRO
strain I-PRO
and O
the O
chemical B-PRO
reactivity I-PRO
of O
Ru B-MAT
QDs B-DSC
significantly O
diminished O
the O
activation B-PRO
energy I-PRO
barrier I-PRO
for O
the O
oxidation B-SMT
of O
CC B-PRO
bonds I-PRO
in O
the O
graphene B-MAT
structure O
. O


the O
Ru B-MAT
QD B-DSC
/ O
NHG B-MAT
hybrid O
material O
was O
utilized O
as O
an O
electrocatalyst B-APL
for O
the O
oxygen B-APL
evolution I-APL
reaction I-APL
in O
Li B-APL
– I-APL
O I-APL
batteries I-APL
, O
showing O
much O
lower O
charge B-PRO
overpotentials I-PRO
compared O
to O
the O
bare O
NHG B-MAT
counterpart O
. O


the O
defect B-DSC
- I-DSC
laden I-DSC
holey I-DSC
graphene B-MAT
counterpart O
can O
be O
highly O
functionalized O
for O
multiple O
applications O
, O
leading O
to O
a O
new O
method O
of O
nanoengineering O
based O
on O
atomic B-PRO
scale I-PRO
defects I-PRO
. O


efficiently O
enhanced O
photoluminescence B-CMT
in O
eu3+ O
- O
doped B-DSC
Lu2Mo3O12 B-MAT
by O
gd3+ O
substituting O


A O
series O
of O
Lu2-xGdx(MoO4)3:0.02Eu3+ B-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
– I-MAT
<nUm> I-MAT
) I-MAT
red B-APL
- I-APL
emitting I-APL
phosphors I-APL
have O
been O
synthesized O
by O
the O
standard O
solid B-SMT
- I-SMT
state I-SMT
reaction I-SMT
method I-SMT
. O


interestingly O
, O
the O
Gd B-MAT
concentration O
plays O
a O
profound O
role O
to O
influence O
the O
luminescence B-PRO
property I-PRO
. O


A O
conspicuous O
monotonic O
increase O
could O
be O
found O
in O
the O
influence O
of O
gd3+ O
concentration O
to O
the O
emission B-PRO
intensity I-PRO
, O
and O
finally O
Gd2Mo3O12 B-MAT
: I-MAT
0.02Eu3+ I-MAT
exhibits O
the O
strongest O
red B-PRO
light I-PRO
emission I-PRO
with O
the O
intensifying B-PRO
factor I-PRO
even O
reaching O
3.04-fold O
compared O
to O
Lu2Mo3O12 B-MAT
: I-MAT
0.02Eu3+ I-MAT
. O


careful O
structural B-CMT
analysis I-CMT
suggested O
that O
up O
to O
about O
<nUm> O
% O
( O
x O
= O
<nUm> O
) O
Lu B-MAT
can O
be O
substituted O
by O
Gd B-MAT
with O
the O
same O
crystal B-PRO
structure I-PRO
of O
Lu2Mo3O12 B-MAT
being O
retained O
, O
while O
a O
higher O
Gd B-MAT
concentration O
would O
lead O
to O
it O
crystallizing O
in O
the O
Gd2Mo3O12 B-MAT
structure O
. O


we O
believe O
that O
the O
variation O
of O
crystal B-PRO
structure I-PRO
is O
responsible O
for O
the O
photoluminescence B-CMT
enhancing O
process O
. O


size O
effect O
on O
near B-PRO
infrared I-PRO
photothermal I-PRO
conversion I-PRO
properties I-PRO
of O
liquid B-SMT
- I-SMT
exfoliated I-SMT
MoS2 B-MAT
and O
MoSe2 B-MAT


molybdenum B-MAT
disulfide I-MAT
and O
molybdenum B-MAT
selenide I-MAT
( O
MoS2 B-MAT
and O
MoSe2 B-MAT
) O
have O
been O
reported O
as O
the O
photothermal B-APL
agent I-APL
due O
to O
the O
excellent O
photothermal B-PRO
conversion I-PRO
property I-PRO
. O


the O
MoS2 B-MAT
and O
MoSe2 B-MAT
nanoflakes B-DSC
water O
dispersion O
solution O
were O
synthesized O
via O
the O
combination O
technology O
of O
grinding B-SMT
and O
sonication B-SMT
. O


the O
different O
size O
distribution O
of O
MoS2 B-MAT
has O
been O
selected O
by O
controlling O
centrifugation B-SMT
rate O
. O


MoS2 B-MAT
nanoflakes B-DSC
exhibit O
better O
photothermal B-PRO
ability I-PRO
than O
MoSe2 B-MAT
at O
the O
same O
concentration O
, O
while O
MoSe2 B-MAT
is O
easier O
to O
tune O
the O
temperature O
changing O
than O
the O
MoS2 B-MAT
by O
size O
selecting O
. O


the O
photothermal B-PRO
mechanism I-PRO
dependence O
of O
the O
lateral O
size O
and O
thickness O
is O
discussed O
based O
on O
the O
micro O
transport O
process O
. O


the O
carrier B-PRO
excess I-PRO
kinetic I-PRO
energy I-PRO
can O
be O
converted O
into O
a O
heat O
via O
phonon B-PRO
emission I-PRO
, O
which O
can O
result O
in O
more O
heat O
energy O
generated O
in O
the O
few B-DSC
- I-DSC
layer I-DSC
MoS2 B-MAT
nanoflakes B-DSC
than O
in O
multi-layer B-DSC
ones O
. O

mechanical B-PRO
properties I-PRO
of O
the O
hexagonal B-SPL
HoMnO3 B-MAT
thin B-DSC
films I-DSC
by O
nanoindentation B-CMT


the O
structural B-PRO
and O
nanomechanical B-PRO
characteristics I-PRO
of O
the O
hexagonal B-SPL
HoMnO3 B-MAT
( O
HMO B-MAT
) O
thin B-DSC
films I-DSC
are O
investigated O
by O
means O
of O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
and O
nanoindentation B-CMT
techniques O
in O
this O
study O
. O


the O
HMO B-MAT
thin B-DSC
films I-DSC
were O
deposited O
on O
YSZ(111) B-MAT
substrates B-DSC
by O
pulsed B-SMT
laser I-SMT
deposition I-SMT
( O
PLD B-SMT
) O
. O


the O
XRD B-CMT
results O
reveal O
only O
pure O
(0001)-oriented O
hexagonal B-SPL
HMO B-MAT
reflections O
without O
any O
discernible O
traces O
of O
impurity O
or O
secondary O
phases O
. O


nanoindentation B-CMT
results O
exhibit O
discontinuities O
in O
the O
load B-CMT
– I-CMT
displacement I-CMT
curve I-CMT
( O
so O
- O
called O
multiple O
“ O
pop O
- O
ins O
” O
event O
) O
during O
loading O
, O
indicating O
possible O
involvement O
of O
dislocation B-PRO
activities I-PRO
. O


No O
discontinuities O
were O
observed O
on O
unloading O
segment O
of O
the O
load B-CMT
– I-CMT
displacement I-CMT
curve I-CMT
. O


continuous B-CMT
stiffness I-CMT
measurements I-CMT
( O
CSM B-CMT
) O
technique O
was O
carried O
out O
in O
the O
nanoindentation B-CMT
tests I-CMT
to O
determine O
the O
hardness B-PRO
and O
young B-PRO
's I-PRO
modulus I-PRO
of O
the O
hexagonal B-SPL
HMO B-MAT
thin B-DSC
films I-DSC
. O


the O
obtained O
hardness B-PRO
and O
young B-PRO
's I-PRO
modulus I-PRO
of O
the O
hexagonal B-SPL
HMO B-MAT
thin B-DSC
films I-DSC
are O
<nUm> O
± O
<nUm> O
GPa O
and O
<nUm> O
± O
<nUm> O
GPa O
, O
respectively O
with O
the O
room O
- O
temperature O
fracture B-PRO
toughness I-PRO
being O
in O
the O
order O
of O
<nUm> O
± O
<nUm> O
MPam1 O
/ 
<nUm> 
. O


oriented O
Ti B-MAT
doped B-DSC
hematite B-MAT
thin B-DSC
film I-DSC
as O
active O
photoanodes B-APL
synthesized O
by O
facile B-SMT
APCVD I-SMT


to O
improve O
the O
optoelectronic B-PRO
properties I-PRO
of O
iron B-MAT
oxide I-MAT
as O
a O
photoelectrode B-APL
, O
hematite B-MAT
( O
a-Fe2O3 B-MAT
) O
thin B-DSC
films I-DSC
were O
doped B-DSC
with O
titanium B-MAT
using O
atmospheric B-SMT
pressure I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
( O
APCVD B-SMT
) O
for O
synthesis O
. O


the O
films B-DSC
were O
prepared O
by O
pyrolysis B-SMT
of O
C5FeO5 O
and O
Cl4Ti O
precursors O
on O
fluorine O
- O
doped B-DSC
tin B-MAT
oxide I-MAT
( O
FTO B-MAT
) O
substrates B-DSC
and O
found O
to O
have O
a O
polycrystalline B-DSC
morphology B-PRO
with O
faceted O
particulates O
∼ O
<nUm> O
to O
<nUm> O
nm O
in O
size O
with O
a O
preferred O
crystallographic O
growth O
along O
the O
[110] O
direction O
. O


the O
performance O
of O
the O
photoanodes B-APL
was O
measured O
as O
a O
function O
of O
titanium B-MAT
concentration O
. O


A O
maximum O
efficiency B-PRO
was O
observed O
at O
∼ O
<nUm> O
atom O
% 
Ti B-MAT
in O
hematite B-MAT
. O


the O
incident B-PRO
photon I-PRO
- I-PRO
to I-PRO
- I-PRO
current I-PRO
conversion I-PRO
efficiency I-PRO
( O
IPCE B-PRO
) O
to O
hydrogen O
was O
measured O
in O
alkaline O
electrolyte B-APL
. O


under O
an O
applied O
bias O
of O
<nUm> O
V O
vs.Ag B-MAT
/ O
AgCl B-MAT
at O
<nUm> O
nm O
the O
IPCE B-PRO
for O
water B-APL
splitting I-APL
in O
alkaline O
solution O
was O
found O
to O
be O
<nUm> O
% O
, O
the O
highest O
efficiency B-PRO
reported O
for O
Ti B-MAT
doped B-DSC
hematite B-MAT
photoanodes B-APL
. O


the O
CEsIP B-PRO
of O
the O
photoanode B-APL
thin B-DSC
films I-DSC
at O
lower O
applied O
bias O
were O
further O
increased O
by O
calcination B-SMT
at O
<nUm> O
° O
C O
and O
by O
use O
of O
glucose O
as O
an O
anolyte O
. O


In O
situ O
synthesis O
and O
properties O
of O
Al3C4Zr2 B-MAT
/ O
B2Zr B-MAT
composites B-DSC


the O
Al3C4Zr2 B-MAT
/ O
B2Zr B-MAT
composites B-DSC
are O
in O
situ O
synthesized O
by O
spark B-SMT
plasma I-SMT
sintering I-SMT
using O
Zr B-MAT
, O
Al B-MAT
, O
graphite B-MAT
, O
and O
B4C B-MAT
powders B-DSC
as O
the O
initial O
materials O
. O


the O
introduction O
of O
B2Zr B-MAT
can O
not O
only O
evidently O
hinder O
the O
coarsening O
of O
Al3C4Zr2 B-MAT
grains O
, O
but O
also O
benefit O
the O
densification B-SMT
and O
improve O
the O
hardness B-PRO
and O
young B-PRO
's I-PRO
modulus I-PRO
of O
the O
Al3C4Zr2 B-MAT
/ O
B2Zr B-MAT
composites B-DSC
. O


when O
the O
B2Zr B-PRO
content I-PRO
is O
<nUm> O
vol. O
% 
, O
the O
composite B-DSC
shows O
an O
optimum O
fracture B-PRO
toughness I-PRO
value O
of O
<nUm> O
MPam1 O
/ 
<nUm> 
, O
about O
<nUm> O
% O
higher O
than O
that O
of O
the O
monolithic B-DSC
Al3C4Zr2 B-MAT
. O


the O
unique O
mechanical B-PRO
properties I-PRO
can O
be O
mainly O
ascribed O
to O
the O
contribution O
of O
B2Zr B-MAT
as O
the O
reinforcing B-APL
phase I-APL
hindering O
the O
crack O
propagating O
. O


compared O
with O
Al3C4Zr2 B-MAT
, O
the O
Al3C4Zr2 B-MAT
/ O
20vol. O
% O
B2Zr B-MAT
composite B-DSC
also O
exhibits O
a O
relatively O
higher O
thermal B-PRO
conductivity I-PRO
and O
better O
oxidation B-PRO
resistance I-PRO
. O


dielectric B-PRO
behavior I-PRO
and O
transport B-PRO
properties I-PRO
of O
OZn B-MAT
nanorods B-DSC


highly O
optical B-PRO
, O
good O
crystalline B-DSC
and O
randomly B-DSC
aligned I-DSC
OZn B-MAT
nanorods B-DSC
were O
synthesized O
by O
the O
hydrothermal B-SMT
method I-SMT
. O


the O
dielectric B-PRO
properties I-PRO
of O
OZn B-MAT
nanorods B-DSC
were O
attributed O
to O
the O
interfacial B-PRO
polarization I-PRO
at O
low O
frequencies O
( O
below O
10kHz O
) O
and O
orientational B-PRO
polarization I-PRO
at O
higher O
frequencies O
. O


the O
observed O
o(n-1) O
dependence O
of O
dielectric B-PRO
loss I-PRO
was O
discussed O
on O
the O
basis O
of O
the O
universal B-CMT
model I-CMT
of I-CMT
dielectric I-CMT
response I-CMT
. O


dielectric B-PRO
loss I-PRO
peak I-PRO
was O
composed O
of O
the O
debye B-PRO
like I-PRO
loss I-PRO
peak I-PRO
at O
higher O
frequencies O
and O
interfacial B-PRO
loss I-PRO
peak I-PRO
at O
lower O
frequencies O
. O


charge B-PRO
transport I-PRO
through O
the O
grain O
and O
grain B-PRO
boundary I-PRO
region O
was O
investigated O
by O
impedance B-CMT
spectroscopy I-CMT
. O


At O
higher O
temperatures O
the O
conductivity B-PRO
of O
the O
nanorod B-DSC
was O
mainly O
through O
the O
grain B-PRO
interior I-PRO
and O
the O
overall O
impedance B-PRO
was O
contributed O
by O
the O
grain B-PRO
boundary I-PRO
region O
. O


the O
activation B-PRO
energy I-PRO
of O
nanorod B-DSC
was O
calculated O
as O
<nUm> O
eV O
, O
which O
is O
slightly O
higher O
than O
the O
reported O
bulk B-DSC
value O
. O


effect O
of O
organic O
additives O
on O
the O
magnetic B-PRO
properties I-PRO
of O
electrodeposited B-SMT
CoNiP B-MAT
hard B-PRO
magnetic I-PRO
films B-DSC


the O
properties O
of O
hard B-PRO
magnetic I-PRO
CoNiP B-MAT
films B-DSC
electrodeposited B-SMT
in O
presence O
of O
organic O
additive O
in O
various O
concentrations O
were O
studied O
with O
respect O
to O
thickness O
of O
the O
films B-DSC
. O


films B-DSC
were O
electrodeposited B-SMT
in O
various O
current O
densities O
and O
for O
different O
time O
in O
order O
to O
get O
different O
thickness O
and O
uniform O
deposits O
. O


elemental B-PRO
composition I-PRO
of O
the O
films B-DSC
was O
obtained O
using O
atomic B-CMT
absorption I-CMT
spectrometry I-CMT
. O


the O
phosphorous B-PRO
content I-PRO
was O
found O
to O
be O
less O
than O
<nUm> O
% O
. O


vibrating B-CMT
sample I-CMT
magnetometric I-CMT
studies I-CMT
indicate O
that O
organic O
additive O
has O
favourable O
impact O
on O
the O
magnetic B-PRO
properties I-PRO
of O
these O
films B-DSC
. O


surface B-CMT
structural I-CMT
analysis I-CMT
was O
carried O
out O
using O
x-ray B-CMT
diffractometry I-CMT
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
. O


reasons O
for O
variation O
in O
magnetic B-PRO
properties I-PRO
and O
structural B-PRO
characteristics I-PRO
are O
discussed O
. O


hardness B-PRO
and O
adhesion B-PRO
of O
the O
films B-DSC
were O
also O
studied O
. O


magnetic B-PRO
structures I-PRO
and O
magnetic B-PRO
phase I-PRO
transitions I-PRO
in O
CoSi2Tb B-MAT


A O
study O
of O
the O
magnetic B-PRO
structure I-PRO
of O
CoSi2Tb B-MAT
has O
been O
made O
. O


using O
a O
neutron B-CMT
diffractometer I-CMT
of O
better O
resolution O
, O
new O
results O
have O
been O
obtained O
. O


this O
compound O
crystallizes O
in O
the O
CeNiSi2 B-MAT
- O
type O
structure O
the O
magnetic B-PRO
moments I-PRO
are O
located O
only O
on O
Tb B-MAT
atoms O
. O


At O
1.5K O
the O
Tb B-PRO
moments I-PRO
have O
two O
components O
, O
a O
collinear O
and O
a O
noncollinear O
( O
spiral O
) O
one O
, O
and O
so O
the O
magnetic B-PRO
order I-PRO
at O
this O
temperature O
has O
a O
complex O
character O
. O


with O
increasing O
temperature O
, O
the O
magnetic B-PRO
structure I-PRO
change O
and O
the O
spiral O
one O
is O
observed O
only O
near O
the O
neel B-PRO
temperature I-PRO
equal O
to O
TN B-PRO
= O
<nUm> O
K O
. O


effect O
of O
supercritical B-SMT
drying I-SMT
temperature O
on O
the O
properties O
of O
zirconia B-MAT
, O
niobia B-MAT
and O
titania B-MAT
- I-MAT
silica I-MAT
aerogels B-DSC


aerogels B-DSC
of O
zirconia B-MAT
, O
niobia B-MAT
and O
titania B-MAT
- I-MAT
silica I-MAT
were O
prepared O
by O
supercritical B-SMT
drying I-SMT
of O
the O
corresponding O
alcogels O
with O
carbon O
dioxide O
at O
<nUm> O
and O
<nUm> O
K O
. O


the O
higher O
drying B-SMT
temperature O
of O
<nUm> O
K O
increased O
the O
pore B-PRO
volume I-PRO
of O
all O
three O
oxides B-MAT
( O
by O
<nUm> O
– O
<nUm> O
% O
relative O
to O
samples O
dried B-SMT
at O
<nUm> O
K O
) O
after O
calcination B-SMT
at O
<nUm> O
K O
but O
affected O
their O
pore B-PRO
size I-PRO
distributions O
differently O
. O


there O
was O
an O
increase O
in O
average O
pore B-PRO
diameter I-PRO
for O
zirconia B-MAT
and O
titania B-MAT
- I-MAT
silica I-MAT
but O
not O
for O
niobia B-MAT
. O


there O
was O
also O
a O
significant O
effect O
on O
crystallization B-PRO
behavior I-PRO
. O


A O
higher O
drying B-SMT
temperature O
facilitated O
crystallization O
of O
tetragonal B-SPL
zirconia B-MAT
and O
anatase B-SPL
titania B-MAT
, O
but O
a O
lower O
drying B-SMT
temperature O
facilitated O
the O
anatase B-SPL
- O
to O
- O
rutile B-SPL
transformation O
of O
titania B-MAT
and O
crystallization O
of O
a O
low O
- O
temperature O
modification O
of O
niobia B-MAT
, O
the O
TT B-SPL
phase O
. O


the O
structural O
evolution O
of O
niobia B-MAT
and O
titania B-MAT
- I-MAT
silica I-MAT
altered O
their O
acidic B-PRO
properties I-PRO
as O
shown O
by O
kinetic O
results O
of O
1-butene O
isomerization O
. O


zirconium B-MAT
titanate I-MAT
from O
sol B-SMT
– I-SMT
gel I-SMT
synthesis O
: O
thermal B-SMT
decomposition I-SMT
and O
quantitative O
phase B-CMT
analysis I-CMT


oxides B-MAT
precursors O
ZrxTi1-xO2(x B-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
and I-MAT
<nUm> I-MAT
) I-MAT
were O
prepared O
by O
a O
hydrolytic B-SMT
sol I-SMT
– I-SMT
gel I-SMT
process O
. O


the O
amorphous B-DSC
mixed O
oxides B-MAT
are O
homogeneous O
as O
deduced O
from O
electron B-CMT
microscopy I-CMT
and O
XPS B-CMT
studies O
. O


the O
crystallization O
of O
these O
amorphous B-DSC
oxides B-MAT
was O
studied O
by O
TGA B-CMT
– I-CMT
DTA I-CMT
and O
thermodiffractometry B-CMT
. O


quantitative O
analysis O
of O
the O
crystalline B-DSC
phases O
, O
obtained O
at O
<nUm> O
° O
C O
, O
was O
carried O
out O
by O
the O
rietveld B-CMT
method I-CMT
. O


the O
samples O
are O
mixtures O
of O
O2Ti B-MAT
, O
O24Ti7Zr5 B-MAT
, O
and O
ZrO2oxides B-MAT
, O
and O
the O
stoichiometry B-PRO
of O
the O
stable O
zirconium B-MAT
titanate I-MAT
phase O
was O
found O
to O
be O
Zr5Ti7O24and B-MAT
not O
ZrTiO4( B-MAT
= I-MAT
O4TiZr I-MAT
) I-MAT
. O


In O
this O
work O
, O
the O
power O
of O
rietveld B-CMT
refinements I-CMT
to O
determine O
phase B-PRO
ratios I-PRO
of O
very O
related O
( O
and O
thus O
very O
overlapped O
) O
phases O
is O
shown O
. O


soft B-CMT
x-ray I-CMT
absorption I-CMT
spectroscopy I-CMT
investigation O
of O
the O
surface B-PRO
chemistry I-PRO
and O
treatments O
of O
copper B-MAT
indium I-MAT
gallium I-MAT
diselenide I-MAT
( O
CIGS B-MAT
) O


the O
surface B-DSC
and O
near B-PRO
surface I-PRO
structure I-PRO
of O
copper-indium-gallium-selenide B-MAT
( O
CIGS B-MAT
) O
absorber B-APL
layers I-APL
is O
integral O
to O
the O
producing O
a O
high O
- O
quality O
photovoltaic B-APL
junction I-APL
. O


by O
using O
x-ray B-CMT
absorption I-CMT
spectroscopy I-CMT
( O
XAS B-CMT
) O
and O
monitoring B-CMT
multiple I-CMT
elemental I-CMT
absorption I-CMT
edges I-CMT
with O
both O
theory O
and O
experiment O
, O
we O
are O
able O
to O
identify O
several O
features O
of O
the O
surface B-DSC
of O
CIGS B-MAT
as O
a O
function O
of O
composition B-PRO
and O
surface B-SMT
treatments I-SMT
. O


the O
XAS B-CMT
data O
shows O
trends O
in O
the O
near O
surface B-DSC
region O
of O
oxygen O
, O
copper B-MAT
, O
indium B-MAT
and O
gallium B-MAT
species O
as O
the O
copper B-MAT
content O
is O
varied O
in O
the O
films B-DSC
. O


the O
oxygen O
surface O
species O
are O
also O
monitored O
through O
a O
series O
of O
experiments O
that O
systematically O
investigates O
the O
effects O
of O
water O
and O
various O
solutions O
of O
: O
ammonium O
hydroxide O
, O
cadmium O
sulfate O
, O
and O
thiourea O
. O


these O
being O
components O
of O
cadmium B-MAT
sulfide I-MAT
chemical B-SMT
bath I-SMT
deposition I-SMT
( O
CBD B-SMT
) O
. O


characteristics O
of O
the O
CBD B-SMT
are O
correlated O
with O
a O
restorative O
effect O
that O
produces O
as O
normalized O
, O
uniform O
surface B-PRO
chemistry I-PRO
as O
measured O
by O
XAS B-CMT
. O


this O
surface B-PRO
chemistry I-PRO
is O
found O
in O
CIGS B-MAT
solar B-APL
cells I-APL
with O
excellent O
power B-PRO
conversion I-PRO
efficiency I-PRO
( O
< O
<nUm> O
% O
) O
. O


the O
results O
provide O
new O
insight O
for O
CIGS B-MAT
processing O
strategies O
that O
seek O
to O
replace O
CBD B-MAT
and O
/ O
or O
cadmium B-MAT
sulfide I-MAT
. O


flexible B-DSC
fiber I-DSC
- I-DSC
shaped I-DSC
CuInSe2 B-MAT
solar B-APL
cells I-APL
with O
single-wire-structure B-PRO
: O
design O
, O
construction O
and O
performance O


fiber B-APL
- I-APL
shaped I-APL
solar I-APL
cells I-APL
( O
CsFS B-APL
) O
have O
attracted O
increasing O
interest O
in O
recent O
years O
due O
to O
their O
numerous O
advantages O
. O


herein O
we O
report O
the O
first O
prototype O
of O
highly O
flexible B-PRO
all-solid-state B-APL
single I-APL
- I-APL
wire I-APL
CsFS I-APL
by O
using O
CuInSe2 B-MAT
( O
CIS B-MAT
) O
as O
the O
model O
photoactive B-PRO
semiconductor I-PRO
. O


CIS B-MAT
layer B-DSC
is O
electrodeposited B-SMT
on O
a O
flexible B-PRO
Mo B-MAT
wire B-DSC
as O
the O
substrate B-DSC
. O


subsequently O
, O
CdS B-MAT
, O
OZn B-MAT
and O
ITO B-MAT
layers B-DSC
are O
orderly O
deposited O
on O
the O
Mo B-MAT
/ O
CIS B-MAT
wire B-DSC
, O
and O
each O
upper O
layer B-DSC
ensures O
full O
contact O
with O
the O
underlying O
layer B-DSC
, O
resulting O
in O
an O
excellent O
structural B-PRO
uniformity I-PRO
along O
circumference O
of O
the O
FSC B-APL
. O


this O
Mo B-MAT
/ O
CIS B-MAT
/ O
CdS B-MAT
/ O
OZn B-MAT
/ O
ITO B-MAT
single B-DSC
- I-DSC
wire I-DSC
FSC B-APL
exhibits O
a O
power B-PRO
conversion I-PRO
efficiency I-PRO
of O
<nUm> O
% O
, O
which O
is O
one O
of O
the O
highest O
values O
in O
all O
reported O
CsFS B-APL
. O


more O
importantly O
, O
the O
present O
all-solid-state O
single B-DSC
- I-DSC
wire I-DSC
FSC B-APL
exhibits O
stable O
conversion B-PRO
efficiency I-PRO
( O
<nUm> O
– O
<nUm> O
% O
) O
during O
rotation O
( O
<nUm> O
∼ O
<nUm> O
° O
) O
, O
bending O
( O
<nUm> O
∼ O
<nUm> O
° O
) O
and O
long O
- O
time O
aging B-SMT
( O
stored O
at O
<nUm> O
° O
C O
for O
600h O
) O
processes O
, O
which O
makes O
it O
possible O
to O
fabricate O
very O
long O
single B-DSC
- I-DSC
wire I-DSC
FSC B-APL
with O
stable O
efficiency B-PRO
for O
weaving B-APL
large I-APL
- I-APL
area I-APL
devices I-APL
and O
/ O
or O
the O
stereoscopic B-APL
cell I-APL
textiles I-APL
. O


our O
method O
provides O
a O
new O
and O
general O
approach O
for O
fabricating O
flexible B-PRO
single B-DSC
- I-DSC
wire I-DSC
FSC B-APL
with O
various O
kinds O
of O
photovoltaic B-PRO
semiconductor I-PRO
materials O
, O
and O
it O
also O
would O
be O
applicable O
to O
develop O
other O
flexible B-APL
electronic I-APL
circuits I-APL
. O


effect O
of O
high O
temperature O
swaging B-SMT
and O
annealing B-SMT
on O
the O
mechanical B-PRO
properties I-PRO
and O
thermal B-PRO
conductivity I-PRO
of O
W B-MAT
– I-MAT
O3Y2 I-MAT


the O
mechanical B-PRO
properties I-PRO
and O
thermal B-PRO
conductivity I-PRO
of O
W B-MAT
– I-MAT
1.0wt I-MAT
% I-MAT
O3Y2 I-MAT
( O
WY10 B-MAT
) O
alloys B-DSC
prepared O
by O
spark B-SMT
plasma I-SMT
sintering I-SMT
( O
SPS B-SMT
) O
as O
well O
as O
ordinary O
sintering B-SMT
followed O
by O
swaging B-SMT
and O
annealing B-SMT
treatment O
, O
respectively O
, O
were O
investigated O
. O


the O
grains O
in O
the O
swaged B-SMT
WY10 B-MAT
are O
of O
round O
- O
bar O
shape O
with O
average O
diameter O
and O
length O
of O
<nUm> O
and O
<nUm> O
mm O
, O
respectively O
, O
which O
keep O
stable O
even O
after O
being O
annealed B-SMT
for O
1h O
at O
<nUm> O
° O
C O
. O


the O
ductile B-PRO
– I-PRO
brittle I-PRO
transition I-PRO
temperature I-PRO
( O
DBTT B-PRO
) O
of O
swaged B-SMT
and O
annealed B-SMT
WY10 B-MAT
is O
about O
<nUm> O
° O
C 
, O
much O
lower O
than O
that O
of O
WY10 B-MAT
prepared O
by O
SPS B-SMT
method O
( O
∼ O
<nUm> O
° O
C 
) O
. O


annealing B-SMT
significantly O
improves O
thermal B-PRO
conductivity I-PRO
from O
<nUm> O
to O
<nUm> O
W O
/ 
mK 
at O
room O
temperature O
. O


In O
addition O
, O
the O
total O
elongation O
is O
raised O
by O
<nUm> O
times O
than O
that O
of O
the O
unannealed O
one O
. O


the O
results O
indicate O
that O
the O
strength B-PRO
, O
ductility B-PRO
and O
thermal B-PRO
conductivity I-PRO
can O
be O
greatly O
improved O
by O
swaging B-SMT
and O
subsequent O
annealing B-SMT
. O


realization O
of O
nonpolar B-PRO
a-plane O
OZn B-MAT
films B-DSC
on O
r-plane O
sapphire B-MAT
substrates B-DSC
using O
a O
simple O
single B-SMT
- I-SMT
source I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT


nonpolar B-PRO
( O
1120 O
) O
OZn B-MAT
thin B-DSC
films I-DSC
( O
a-plane O
OZn B-MAT
) O
have O
been O
grown O
on O
( O
1102 O
) O
sapphire B-MAT
substrates B-DSC
( O
r-plane O
sapphire B-MAT
) O
by O
a O
simple O
atmospheric B-SMT
pressure I-SMT
single I-SMT
- I-SMT
source I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
( O
SSCVD B-SMT
) O
approach O
. O


the O
crystallinity B-PRO
, O
surface B-PRO
morphology I-PRO
and O
optical B-PRO
property I-PRO
of O
the O
films B-DSC
were O
investigated O
using O
high B-CMT
- I-CMT
resolution I-CMT
x-ray I-CMT
diffraction I-CMT
( O
HRXRD B-CMT
) O
, O
scanning B-CMT
electron I-CMT
microscope I-CMT
( O
SEM B-CMT
) O
and O
transmission B-CMT
spectrum O
, O
respectively O
. O


XRD B-CMT
results O
revealed O
that O
the O
OZn B-MAT
films B-DSC
were O
grown O
on O
the O
substrates B-DSC
epitaxially O
along O
( O
1120 O
) O
orientation O
, O
and O
the O
epitaxial O
relationship O
between O
the O
OZn B-MAT
films B-DSC
and O
the O
substrates B-DSC
was O
determined O
to O
be O
(1120)ZnO[?](1102) O
Al2O3 B-MAT
, O
and O
[1101]ZnO[?][0221]Al2O3 B-MAT
. O


the O
SEM B-CMT
image O
exhibited O
that O
the O
a-plane O
OZn B-MAT
films B-DSC
showed O
a O
high O
density B-PRO
of O
well O
- O
aligned O
OZn B-MAT
sheets B-DSC
with O
rectangular O
structure B-PRO
. O


the O
transmission B-CMT
spectrum O
showed O
that O
the O
OZn B-MAT
films B-DSC
were O
highly O
transparent B-PRO
in O
the O
visible O
region O
. O


reduced B-MAT
graphene I-MAT
oxide I-MAT
/ O
OZn B-MAT
nanohybrids B-DSC
: O
metallic B-PRO
Zn B-MAT
powder B-DSC
induced O
one O
- O
step O
synthesis O
for O
enhanced O
photocurrent B-PRO
and O
photocatalytic B-PRO
response I-PRO


reduced B-MAT
graphene I-MAT
oxide I-MAT
hybridized O
hierarchical O
OZn B-MAT
nanorods B-DSC
( O
RGO B-MAT
/ O
OZn B-MAT
) O
were O
fabricated O
through O
thermal B-SMT
treatment I-SMT
of O
aqueous O
solution O
containing O
metallic B-PRO
Zn B-MAT
powder B-DSC
, O
Zn(NO3)2*6H2O O
, O
graphene B-MAT
oxide I-MAT
( O
GO B-MAT
) O
, O
and O
HNaO O
at O
<nUm> O
° O
C O
. O


this O
one O
- O
spot O
, O
additives O
- O
free O
method O
successfully O
made O
metallic B-PRO
Zn B-MAT
powder B-DSC
a O
reducing O
agent O
of O
GO B-MAT
, O
a O
precursor O
of O
OZn B-MAT
, O
and O
also O
a O
morphology B-PRO
controller O
of O
RGO B-MAT
/ O
OZn B-MAT
. O


RGO B-MAT
/ O
OZn B-MAT
nanohybrids B-DSC
with O
4wt- O
% O
of O
RGO B-MAT
displayed O
optimal O
photocurrent B-PRO
and O
photocatalytic B-PRO
response I-PRO
under O
UV B-SMT
irradiation I-SMT
with O
<nUm> O
times O
and O
<nUm> O
times O
that O
of O
pure O
OZn B-MAT
nanoflowers B-DSC
, O
respectively O
. O


strong O
coupling O
and O
electronic B-PRO
interaction I-PRO
between O
GO B-MAT
and O
OZn B-MAT
were O
verified O
by O
using O
XPS B-CMT
measurement O
and O
photoelectrochemical B-CMT
technique I-CMT
. O


the O
combination O
of O
supreme O
absorption B-PRO
( O
of O
UV O
light O
and O
dye O
) O
, O
suppressed O
photogenerated B-PRO
carriers I-PRO
recombination I-PRO
, O
and O
decreased O
solid B-PRO
interlayer I-PRO
resistance I-PRO
of O
nanohybrids B-DSC
contributed O
to O
their O
superior O
photochemical B-PRO
properties I-PRO
. O


effects O
of O
mechanical B-SMT
milling I-SMT
on O
the O
properties O
of O
Mg B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Ti I-MAT
and O
Mg B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Al I-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Ti I-MAT
metal O
– O
metal O
composite B-DSC


the O
mechanical B-PRO
properties I-PRO
of O
Mg B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Ti I-MAT
and O
Mg B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Al I-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Ti I-MAT
metal O
– O
metal O
composites B-DSC
produced O
via O
mechanical B-SMT
milling I-SMT
have O
been O
studied O
in O
the O
present O
paper O
. O


strain B-PRO
to I-PRO
failure I-PRO
was O
found O
to O
have O
dramatically O
increased O
after O
the O
milling B-SMT
process O
. O


the O
hall B-PRO
- I-PRO
petch I-PRO
constant I-PRO
K I-PRO
for O
Mg B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Ti I-MAT
composite B-DSC
was O
found O
to O
be O
<nUm> O
MPa O
/ 
nm-1 
/ 
<nUm> 
while O
a O
negative O
value O
was O
found O
for O
Mg B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Al I-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Ti I-MAT
. O


coherent B-CMT
anti I-CMT
stokes I-CMT
raman I-CMT
scattering I-CMT
and O
magnetooptical B-PRO
interband- I-PRO
transitions I-PRO
in O
superlattices B-DSC
of O
diluted B-PRO
magnetic I-PRO
IV I-PRO
– I-PRO
VI I-PRO
semiconductors I-PRO


In O
diluted B-PRO
magnetic I-PRO
IV I-PRO
– I-PRO
VI I-PRO
semiconductors I-PRO
like O
MnPbTe B-MAT
or O
MnPbSe B-MAT
there O
is O
a O
strong O
dependence O
of O
the O
effective O
g-factors B-PRO
of I-PRO
conduction I-PRO
and O
valence B-PRO
band I-PRO
on O
temperature O
and O
magnetic O
field O
. O


this O
modification O
of O
the O
spin B-PRO
splittings I-PRO
with O
respect O
to O
the O
diamagnetic B-PRO
host O
materials O
is O
caused O
by O
an O
exchange B-PRO
interaction I-PRO
between O
the O
free B-PRO
carriers I-PRO
and O
the O
magnetic B-PRO
moments I-PRO
of O
the O
paramagnetic B-PRO
ions O
. O


In O
quantum B-APL
wells I-APL
( O
QW B-APL
's I-APL
) O
or O
superlattices B-DSC
( O
SL B-DSC
's I-DSC
) O
the O
strength O
of O
the O
exchange B-PRO
interaction I-PRO
depends O
on O
the O
penetration O
of O
the O
wave B-PRO
functions I-PRO
of O
the O
free B-PRO
carriers I-PRO
into O
the O
diluted B-PRO
magnetic I-PRO
component I-PRO
. O


detailed O
informations O
on O
the O
bandstructure B-PRO
of O
PbSe B-MAT
/ O
MnPbSe B-MAT
SL B-DSC
's I-DSC
and O
MQW B-APL
's I-APL
are O
achieved O
for O
different O
concentrations O
of O
the O
magnetic B-PRO
ions O
and O
different O
widths O
of O
the O
quantum B-APL
wells I-APL
by O
interbandabsorption B-CMT
and O
coherent B-CMT
raman I-CMT
experiments I-CMT
( O
CARS B-CMT
) O
. O


particularly O
CARS B-CMT
yields O
very O
precise O
data O
on O
the O
spin B-PRO
splittings I-PRO
of O
carriers O
confined O
in O
the O
quantum B-APL
wells I-APL
. O


In O
type O
I O
' O
MQW B-APL
's I-APL
the O
interband B-PRO
transitions I-PRO
which O
are O
indirect O
in O
real O
space O
give O
complementary O
informations O
. O


the O
analysis O
of O
CARS B-CMT
data O
from O
various O
MnPbSe B-MAT
/ O
PbSe B-MAT
QW B-APL
structures O
yields O
a O
type B-PRO
I' I-PRO
alignment I-PRO
with O
electrons O
confined O
in O
the O
MnPbSe B-MAT
layers B-DSC
and O
holes O
in O
the O
PbSe B-MAT
layers B-DSC
. O


the O
interband B-CMT
magnetooptical I-CMT
data O
support O
these O
conclusions O
. O


atomic B-CMT
- I-CMT
scale I-CMT
characterization I-CMT
of O
interfaces B-DSC
in O
the O
AsGa B-MAT
/ O
AlAsGa B-MAT
superlattices B-DSC


we O
present O
a O
new O
interpretation O
of O
the O
raman B-CMT
spectra O
of O
AsGa B-MAT
/ O
AlAs B-MAT
ultrathin B-DSC
- I-DSC
layer I-DSC
superlattices I-DSC
based O
on O
the O
microscopic O
analysis O
of O
the O
optical B-PRO
vibrational I-PRO
modes I-PRO
. O


the O
difference O
between O
normal O
and O
inverted O
interfaces B-DSC
is O
responsible O
for O
the O
lack O
of O
the O
inversion B-PRO
symmetry I-PRO
of O
the O
layers B-DSC
with O
respect O
to O
the O
central O
plane O
, O
therefore O
confined O
modes O
can O
no O
longer O
be O
considered O
as O
even O
or O
odd O
ones O
. O


all O
the O
optical B-PRO
vibrational I-PRO
modes I-PRO
, O
independently O
of O
their O
quantum B-PRO
index I-PRO
, O
are O
now O
active O
in O
raman B-CMT
scattering I-CMT
. O


structure B-PRO
– I-PRO
property I-PRO
relationship I-PRO
of O
Si B-MAT
- O
DLC B-MAT
films B-DSC


In O
the O
present O
work O
, O
ar+ B-SMT
ion I-SMT
beam I-SMT
assisted I-SMT
deposition I-SMT
was O
utilized O
at O
various O
ion O
energies O
and O
current O
densities O
to O
prepare O
silicon B-MAT
- O
containing O
diamond B-MAT
- I-MAT
like I-MAT
carbon I-MAT
( O
Si B-MAT
– O
DLC B-MAT
) O
films B-DSC
. O


TEM B-CMT
analysis O
showed O
that O
the O
films B-DSC
are O
mainly O
amorphous B-DSC
and O
composed O
of O
diamond B-MAT
- O
like O
and O
graphite B-MAT
- O
like O
domains O
. O


the O
bonding B-PRO
characteristics I-PRO
of O
the O
films B-DSC
were O
studied O
by O
FTIR B-CMT
spectroscopy I-CMT
. O


it O
was O
found O
that O
Si B-MAT
suppresses O
formation O
of O
aromatic O
structures O
and O
participates O
in O
the O
structure O
of O
DLC B-MAT
by O
tetrahedral B-PRO
bonding I-PRO
with O
H O
and O
CHn O
groups O
. O


A O
direct O
correspondence O
was O
determined O
between O
ion O
current O
density O
during O
deposition O
and O
the O
sp3 B-PRO
/ I-PRO
sp2 I-PRO
ratio I-PRO
in O
the O
films B-DSC
. O


lower O
ion O
current O
densities O
were O
found O
to O
favor O
SiC B-MAT
tetrahedral B-PRO
bonds I-PRO
, O
increase O
sp3 B-PRO
/ I-PRO
sp2 I-PRO
ratio I-PRO
and O
hardness B-PRO
but O
also O
increase O
surface B-PRO
roughness I-PRO
and O
decrease O
deposition O
rate O
. O


pin B-CMT
- I-CMT
on I-CMT
- I-CMT
disc I-CMT
experiments I-CMT
were O
conducted O
to O
characterize O
the O
tribological B-PRO
behavior I-PRO
of O
the O
Si B-MAT
– O
DLC B-MAT
films B-DSC
. O


In O
general O
, O
the O
films B-DSC
exhibited O
low O
friction B-PRO
and O
high O
wear B-PRO
resistance I-PRO
, O
especially O
under O
low O
loading O
conditions O
. O


the O
results O
suggest O
that O
films B-DSC
with O
a O
pronounced O
graphitic B-PRO
nature I-PRO
possess O
better O
tribological B-PRO
characteristics I-PRO
. O


films B-DSC
with O
enhanced O
diamond B-MAT
- O
like O
character O
and O
of O
sufficient O
thickness O
may O
have O
potential O
for O
applications O
against O
ceramic B-APL
counter I-APL
faces I-APL
. O


effect O
of O
Ti B-PRO
content I-PRO
and O
nitrogen O
on O
the O
high B-PRO
- I-PRO
temperature I-PRO
oxidation I-PRO
behavior I-PRO
of O
(Mo,Ti)5Si3 B-MAT


the O
binary O
intermetallic B-PRO
compounds O
Mo5Si3 B-MAT
( O
T1 O
) O
and O
Si3Ti5 B-MAT
are O
prone O
to O
rapid O
oxidation B-SMT
below O
<nUm> O
° O
C O
. O


recent O
investigations O
on O
(Mo,Ti)5Si3 B-MAT
, O
however O
, O
revealed O
that O
macro-alloying B-SMT
with O
<nUm> O
at. O
% O
Ti B-MAT
can O
result O
in O
a O
very O
good O
oxidation B-PRO
resistance I-PRO
in O
a O
wide O
temperature O
range O
( O
<nUm> O
– O
<nUm> O
° O
C O
) O
due O
to O
the O
formation O
of O
a O
duplex B-DSC
layer I-DSC
composed O
of O
a O
silica B-MAT
matrix B-DSC
with O
dispersed O
titania B-MAT
. O


additionally O
, O
Ti B-MAT
decreases O
density B-PRO
making O
(Mo,Ti)5Si3 B-MAT
a O
promising O
key O
constituent O
of O
quaternary O
Mo-Si-B-Ti B-MAT
alloys B-DSC
considered O
for O
ultrahigh B-APL
temperature I-APL
structural I-APL
applications I-APL
. O


the O
aim O
of O
this O
study O
is O
to O
obtain O
an O
in-depth O
understanding O
of O
the O
influence O
of O
different O
Ti B-PRO
concentrations I-PRO
as O
well O
as O
of O
nitrogen O
on O
the O
oxidation B-PRO
behavior I-PRO
of O
(Mo,Ti)5Si3 B-MAT
at O
intermediate O
and O
elevated O
temperatures O
. O


the O
microstructure B-PRO
and O
oxidation B-PRO
mechanisms I-PRO
were O
analyzed O
using O
various O
experimental O
techniques O
. O


the O
experimental O
results O
were O
supported O
by O
ab B-CMT
initio I-CMT
and O
thermodynamic B-CMT
calculations I-CMT
. O


synthesis O
, O
microstructure B-PRO
and O
mechanical B-PRO
properties I-PRO
of O
reactively B-SMT
sintered I-SMT
B2Zr B-MAT
– O
CSi B-MAT
– O
NZr B-MAT
composites B-DSC


B2Zr B-MAT
– O
CSi B-MAT
– O
NZr B-MAT
composites B-DSC
were O
fabricated O
by O
reactive B-SMT
hot I-SMT
pressing I-SMT
using O
Zr B-MAT
, O
N4Si3 B-MAT
, O
and O
B4C B-MAT
powders B-DSC
as O
starting O
materials O
. O


sintering B-SMT
was O
conducted O
at O
temperatures O
of O
<nUm> O
to O
<nUm> O
° O
C O
under O
a O
load O
of O
20MPa O
in O
Ar O
atmosphere O
. O


the O
composite B-DSC
was O
densified B-SMT
at O
<nUm> O
° O
C O
. O


the O
in O
situ O
formed O
BN B-MAT
flakes B-DSC
which O
distributed O
uniformly O
at O
the O
grain B-PRO
boundaries I-PRO
were O
identified O
by O
x-ray B-CMT
diffraction I-CMT
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
. O


the O
formation O
of O
h-BN B-MAT
phase O
and O
its O
effect O
on O
the O
mechanical B-PRO
properties I-PRO
of O
the O
composite B-DSC
are O
discussed O
. O


enhanced O
multiferroic B-PRO
properties I-PRO
and O
tunable O
magnetic B-PRO
behavior I-PRO
in O
multiferroic B-PRO
BiFeO3 B-MAT
– O
BiNaO6Ti2 B-MAT
solid B-DSC
solutions I-DSC


A O
series O
of O
multiferroic B-PRO
(1-x)BiFeO3-x(Bi0.5Na0.5)TiO3 B-MAT
( I-MAT
BF I-MAT
– I-MAT
BNT I-MAT
) I-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
− I-MAT
<nUm> I-MAT
) I-MAT
solid B-DSC
solution I-DSC
ceramics I-DSC
were O
prepared O
by O
a O
sol B-SMT
– I-SMT
gel I-SMT
method O
. O


the O
XRD B-CMT
results O
show O
that O
increasing O
BNT B-MAT
content O
induce O
a O
gradual O
phase O
transformation O
from O
rhombohedral B-SPL
to O
pseudocubic B-SPL
structure O
near O
x O
= O
<nUm> O
. O


compared O
with O
pure B-DSC
BiFeO3 B-MAT
, O
superior O
multiferroic B-PRO
properties I-PRO
are O
obtained O
for O
x O
= O
<nUm> O
with O
remnant B-PRO
polarization I-PRO
Pr I-PRO
= O
<nUm> O
mC O
/ 
cm2 
and O
saturated B-PRO
magnetization I-PRO
ms I-PRO
= O
<nUm> O
emu O
/ 
g 
. O


importantly O
, O
the O
paramagnetic B-PRO
( O
PM B-PRO
) O
to O
ferromagnetic B-PRO
( O
FM B-PRO
) O
transition O
is O
observed O
for O
the O
solutions O
, O
and O
the O
curie B-PRO
temperature I-PRO
( O
TC B-PRO
) O
can O
be O
tuned O
by O
varying O
the O
content O
of O
BNT B-MAT
. O


this O
observed O
FM B-PRO
ordering I-PRO
is O
discussed O
in O
terms O
of O
the O
possible O
existence O
of O
the O
long O
- O
range O
superexchange B-PRO
interaction I-PRO
of O
fe3+ O
– O
O O
– O
Ti B-MAT
– O
O O
– O
fe3+ O
in O
the O
chemically B-PRO
ordered I-PRO
regions O
. O


electron B-PRO
- I-PRO
phonon I-PRO
interactions I-PRO
in O
high O
- O
temperature O
oxide B-MAT
superconductors B-PRO
: O
isotope O
effects O
and O
elasticity B-CMT
studies I-CMT


the O
substitution O
of O
different O
oxygen O
isotopes O
into O
the O
high-Tc B-PRO
oxide B-MAT
superconductors B-PRO
Cu20La37O80Sr3 B-MAT
and O
Ba2Cu3O7Y B-MAT
is O
investigated O
by O
transport B-CMT
and O
magnetic B-CMT
measurements I-CMT
. O


for O
both O
materials O
, O
replacement O
of O
16O O
with O
18O O
depresses O
Tc B-PRO
slightly O
. O


the O
observed O
shifts O
are O
much O
smaller O
than O
those O
expected O
from O
conventional O
electron B-PRO
- I-PRO
phonon I-PRO
pairing I-PRO
superconductivity I-PRO
. O


we O
also O
explore O
the O
elastic B-PRO
properties I-PRO
of O
la- B-MAT
, O
Y- B-MAT
, O
and O
bi-based B-MAT
high-Tc B-PRO
superconductors I-PRO
, O
including O
single B-DSC
crystals I-DSC
. O


only O
Cu20La37O80Sr3 B-MAT
shows O
a O
dramatic O
soft B-PRO
phonon I-PRO
mode I-PRO
above O
Tc B-PRO
. O


quantum O
confinement O
controlled O
photocatalytic B-APL
water I-APL
splitting I-APL
by O
suspended B-DSC
CdSe B-MAT
nanocrystals B-DSC


the O
photocatalytic B-APL
hydrogen I-APL
production I-APL
of O
CdSe B-MAT
nanocrystals B-DSC
( O
<nUm> O
– O
<nUm> O
nm O
) O
in O
the O
presence O
of O
aqueous O
sodium O
sulphite O
depends O
exponentially O
on O
the O
bandgap B-PRO
of O
the O
particles B-DSC
, O
confirming O
that O
the O
material O
's O
activity B-PRO
is O
controlled O
by O
the O
degree O
of O
quantum O
confinement O
. O


persistent B-PRO
luminescence I-PRO
in O
rare O
earth O
ion O
- O
doped B-DSC
gadolinium B-MAT
oxysulfide I-MAT
phosphors B-APL


A O
series O
of O
rare O
- O
earth O
ion O
- O
doped B-DSC
gadolinium B-MAT
oxysulfide I-MAT
phosphors B-PRO
Gd2O2S I-MAT
: I-MAT
RE3+ I-MAT
, I-MAT
Ti I-MAT
, I-MAT
Mg I-MAT
( I-MAT
RE I-MAT
= I-MAT
Ce I-MAT
, I-MAT
Pr I-MAT
, I-MAT
Nd I-MAT
, I-MAT
Sm I-MAT
, I-MAT
Eu I-MAT
, I-MAT
Tb I-MAT
, I-MAT
Dy I-MAT
, I-MAT
Ho I-MAT
, I-MAT
Er I-MAT
, I-MAT
Tm I-MAT
, I-MAT
Yb I-MAT
) I-MAT
were O
synthesized O
by O
solid B-SMT
- I-SMT
state I-SMT
reaction I-SMT
. O


the O
excitation B-CMT
and O
photoluminescence B-CMT
spectra O
, O
afterglow B-CMT
spectra O
, O
afterglow B-CMT
decay I-CMT
curves I-CMT
and O
thermoluminescence B-CMT
spectra O
of O
the O
phosphors B-APL
were O
examined O
. O


according O
to O
the O
afterglow B-CMT
spectra O
, O
gadolinium B-MAT
oxysulfide I-MAT
doped B-DSC
with O
rare O
- O
earth O
ions O
were O
classified O
into O
three O
groups O
. O


when O
rare O
earth O
ions O
such O
as O
eu3+ O
, O
sm3+ O
, O
dy3+ O
, O
ho3+ O
, O
er3+ O
and O
tm3+ O
were O
introduced O
into O
the O
Gd2O2S B-MAT
host O
, O
their O
characteristic B-PRO
emission I-PRO
as O
well O
as O
that O
from O
Gd2O2S B-MAT
: I-MAT
Ti I-MAT
, I-MAT
Mg I-MAT
were O
observed O
. O


In O
case O
of O
yb3+ O
and O
nd3+ O
, O
only O
the O
broadband B-PRO
luminescence I-PRO
of O
Gd2O2S B-MAT
: I-MAT
Ti I-MAT
, I-MAT
Mg I-MAT
was O
obtained O
. O


gadolinium B-MAT
oxysulfide I-MAT
doped B-DSC
with O
pr3+ O
, O
tb3+ O
and O
ce3+ O
did O
not O
show O
afterglow B-PRO
emission I-PRO
. O


the O
calculated O
trap B-PRO
energy I-PRO
levels I-PRO
of O
the O
samples O
were O
compared O
. O


the O
role O
of O
Ti B-MAT
and O
Mg B-MAT
ions O
and O
a O
potential O
mechanism O
for O
persistent B-PRO
luminescence I-PRO
in O
the O
samples O
were O
discussed O
. O


investigation O
on O
mechanochemical B-SMT
synthesis I-SMT
of O
Al2O3 B-MAT
/ O
BN B-MAT
nanocomposite B-DSC
by O
aluminothermic B-SMT
reaction I-SMT


alpha-alumina B-MAT
– O
boron B-MAT
nitride I-MAT
( O
a-Al2O3 B-MAT
– O
BN B-MAT
) O
nanocomposite B-DSC
was O
synthesized O
using O
mixtures O
of O
aluminum B-MAT
nitride I-MAT
, O
boron B-MAT
oxide I-MAT
and O
pure B-DSC
aluminum B-MAT
as O
raw O
materials O
via O
mechanochemical B-SMT
process I-SMT
under O
a O
low O
pressure O
of O
nitrogen O
gas O
( O
0.5MPa O
) O
. O


the O
phase O
transformation O
and O
structural O
evaluation O
during O
mechanochemical B-SMT
process I-SMT
were O
investigated O
by O
x-ray B-CMT
diffractometry I-CMT
( O
XRD B-CMT
) O
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
, O
and O
differential B-CMT
thermal I-CMT
analysis I-CMT
( O
DTA B-CMT
) O
techniques O
. O


the O
results O
indicated O
that O
high O
exothermic O
reaction O
of O
Al B-MAT
– O
B2O3 B-MAT
systems O
under O
the O
nitrogen O
pressure O
produced O
alumina B-MAT
, O
aluminum B-MAT
nitride I-MAT
( O
AlN B-MAT
) O
, O
and O
aluminum B-MAT
oxynitride I-MAT
( O
Al5NO6 B-MAT
) O
depending O
on O
the O
Al B-MAT
value O
and O
milling B-SMT
time O
, O
but O
no O
trace O
of O
boron B-MAT
nitride I-MAT
( O
BN B-MAT
) O
phases O
could O
be O
identified O
. O


on O
the O
other O
hand O
, O
AlN B-MAT
addition O
as O
a O
solid O
nitrogen O
source O
was O
effective O
in O
fabricating O
in-situ O
BN B-MAT
phase O
after O
4h O
milling B-SMT
process O
. O


In O
Al B-MAT
– O
B2O3 B-MAT
– O
AlN B-MAT
system O
, O
the O
aluminothermic B-SMT
reaction I-SMT
provided O
sufficient O
heat O
for O
activating O
reaction O
between O
B2O3 B-MAT
and O
AlN B-MAT
to O
form O
BN B-MAT
compound O
. O


DTA B-CMT
analysis O
results O
showed O
that O
by O
increasing O
the O
activation O
time O
to O
3h O
, O
the O
temperature O
of O
both O
thermite B-MAT
and O
synthesis O
reactions O
significantly O
decreased O
and O
occurred O
as O
a O
one O
- O
step O
reaction O
. O


SEM B-CMT
and O
TEM B-CMT
observations O
confirmed O
that O
the O
range O
of O
particle O
size O
was O
within O
<nUm> O
nm O
. O


enhanced O
photocurrent B-PRO
in O
RuL2(NCS)2 B-MAT
/ O
di-(3-aminopropyl)-viologen O
/ O
O2Sn B-MAT
/ O
ITO B-MAT
system O


A O
ru(2,2'-bipyridine-4,4'-dicarboxylic O
acid)2(NCS)2 O
[RuL2(NCS)2] O
/ O
di-(3-aminopropyl)-viologen O
( O
DAPV O
) O
/ O
tin B-MAT
oxide I-MAT
( O
O2Sn B-MAT
) O
system O
was O
prepared O
and O
applied O
to O
extensive O
photocurrent B-PRO
generation O
with O
its O
maximum O
surface B-PRO
area I-PRO
. O


the O
O2Sn B-MAT
thin B-DSC
films I-DSC
on O
tin B-MAT
- O
doped B-DSC
indium B-MAT
oxide I-MAT
( O
ITO B-MAT
) O
were O
prepared O
using O
the O
chemical B-SMT
bath I-SMT
deposition I-SMT
method I-SMT
. O


then O
, O
RuL2(NCS)2 B-MAT
/ O
DAPV O
on O
O2Sn B-MAT
/ O
ITO B-MAT
was O
easily O
prepared O
using O
self B-SMT
- I-SMT
assembled I-SMT
monolayers B-DSC
( O
SAMs B-DSC
) O
. O


the O
photocurrent B-CMT
measurement I-CMT
of O
the O
system O
showed O
an O
excellent O
photocurrent B-PRO
of O
<nUm> O
nAcm-2 O
under O
the O
air O
mass O
<nUm> O
conditions O
( O
100mWcm-2 O
) O
, O
which O
was O
increased O
by O
a O
factor O
of O
four O
compared O
to O
ones O
without O
O2Sn B-MAT
layers B-DSC
. O


A O
comparative O
study O
of O
Ca8K3La26Mn40Na3O120 B-MAT
compound O
synthesized O
by O
solid B-SMT
- I-SMT
state I-SMT
and O
sol B-SMT
- I-SMT
gel I-SMT
process O


In O
this O
paper O
, O
we O
investigated O
the O
impact O
of O
the O
elaborating O
method O
on O
the O
structural B-PRO
, O
magnetic B-PRO
and O
magnetocaloric B-PRO
properties I-PRO
of O
Ca8K3La26Mn40Na3O120 B-MAT
powder B-DSC
sample O
, O
synthesized O
by O
both O
methods O
: O
solid B-SMT
state I-SMT
( O
SS B-SMT
) O
and O
sol B-SMT
gel I-SMT
( O
SG B-SMT
) O
process O
. O


the O
two O
compounds O
were O
firstly O
analyzed O
by O
thermogravimetric B-CMT
analysis I-CMT
( O
TGA B-CMT
) O
and O
differential B-CMT
thermal I-CMT
analysis I-CMT
( O
DTA B-CMT
) O
to O
determine O
the O
temperature O
transformation O
into O
the O
perovskite B-SPL
structure O
. O


the O
rietveld B-CMT
refinement I-CMT
of O
the O
x-ray B-CMT
powder I-CMT
diffraction I-CMT
show O
that O
both O
samples O
are O
single B-DSC
phase I-DSC
and O
crystallize O
in O
the O
orthorhombic B-SPL
structure O
with O
pbnm B-SPL
space O
group O
. O


the O
surface B-PRO
morphology I-PRO
of O
the O
samples O
was O
carried O
out O
using O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
. O


magnetization B-PRO
measurements O
versus O
temperature O
in O
a O
magnetic O
applied O
field O
of O
<nUm> O
T O
indicate O
that O
both O
samples O
exhibit O
a O
paramagnetic B-PRO
- I-PRO
ferromagnetic I-PRO
transition I-PRO
with O
decreasing O
temperature O
. O


curie B-PRO
temperature I-PRO
TC I-PRO
is O
found O
to O
be O
<nUm> O
and O
<nUm> O
K O
for O
SS B-SMT
and O
SG B-SMT
samples O
, O
respectively O
. O


the O
maximum O
of O
the O
magnetic B-PRO
entropy I-PRO
change O
, O
| O
δ B-PRO
S I-PRO
m I-PRO
m I-PRO
a I-PRO
x I-PRO
| O
, O
is O
lower O
in O
the O
SG B-SMT
sample O
than O
in O
the O
SS B-SMT
sample O
, O
but O
the O
thermal O
variation O
of O
-DSM B-PRO
is O
broader O
, O
resulting O
in O
a O
higher O
relative B-PRO
cooling I-PRO
power I-PRO
( O
RCP B-PRO
) O
. O


the O
electronic B-PRO
structure I-PRO
and O
the O
correlation B-PRO
energy I-PRO
in O
NiS B-MAT


photoemission B-CMT
and O
inverse B-CMT
photoemission I-CMT
( O
BIS B-CMT
) O
data O
for O
NiS B-MAT
are O
reported O
. O


they O
give O
the O
electronic B-PRO
structure I-PRO
of O
NiS B-MAT
namely O
a O
p-band O
intersecting O
the O
fermi B-PRO
energy I-PRO
and O
a O
bare O
coulomb B-PRO
correlation I-PRO
energy I-PRO
of O
<nUm> O
eV O
. O


this O
shows O
that O
the O
simple O
mott B-CMT
- I-CMT
hubbard I-CMT
model I-CMT
has O
to O
be O
modified O
to O
take O
relaxation O
into O
account O
. O


effect O
of O
vacuum B-SMT
annealing I-SMT
on O
structural B-PRO
, O
electrical B-PRO
and O
thermal B-PRO
properties I-PRO
of O
e-beam B-SMT
evaporated I-SMT
Bi2Te3 B-MAT
thin B-DSC
films I-DSC


nanocrystalline B-DSC
thin I-DSC
films I-DSC
of O
a O
V-VI O
compound O
Bi2Te3 B-MAT
are O
fabricated O
with O
uniform O
thickness O
by O
e-beam B-SMT
evaporation I-SMT
at O
room O
temperature O
. O


the O
as-deposited B-DSC
films I-DSC
are O
stoichiometric B-DSC
, O
monophasic B-DSC
, O
highly O
strained O
and O
polycrystalline B-DSC
. O


we O
studied O
the O
effect O
of O
vacuum B-SMT
annealing I-SMT
( O
at O
a O
pressure O
of O
~ O
<nUm> O
× O
10-6mbar O
) O
on O
composition B-PRO
, O
structure B-PRO
, O
optical B-PRO
and O
electrical B-PRO
properties I-PRO
of O
these O
films B-DSC
. O


it O
is O
observed O
that O
, O
as O
the O
annealing B-SMT
temperature O
increases O
( O
from O
<nUm> O
° O
C O
to O
<nUm> O
° O
C O
) O
, O
the O
crystallites B-DSC
grow O
with O
a O
preferential O
orientation O
along O
( O
<nUm> O
) O
planes O
with O
slight O
increase O
in O
the O
crystallite B-PRO
size I-PRO
from O
~ O
<nUm> O
nm O
to O
<nUm> O
nm O
. O


this O
is O
associated O
with O
the O
breaking O
of O
quintuple O
layers B-DSC
and O
rearrangement O
of O
crystallographic B-PRO
planes I-PRO
in O
the O
crystallites B-DSC
with O
Te B-MAT
rich O
surface B-DSC
emerging O
on O
vacuum B-SMT
annealing I-SMT
as O
evidenced O
from O
the O
XRD B-CMT
, O
raman B-CMT
and O
high B-CMT
- I-CMT
resolution I-CMT
TEM I-CMT
studies I-CMT
. O


the O
direct B-PRO
bandgap I-PRO
( O
0.116eV O
) O
of O
as-deposited B-DSC
Bi2Te3 B-MAT
changes O
from O
<nUm> O
eV O
to O
<nUm> O
eV O
on O
annealing B-SMT
at O
<nUm> O
° O
C O
to O
<nUm> O
° O
C O
, O
respectively O
. O


interestingly O
, O
we O
observe O
a O
gradual O
change O
from O
a O
semiconductor B-PRO
to O
metallic B-PRO
behavior I-PRO
on O
annealing B-SMT
the O
samples O
from O
<nUm> O
° O
C O
to O
<nUm> O
° O
C O
. O


such O
a O
transition O
from O
negative B-PRO
temperature I-PRO
coefficient I-PRO
( O
NTC B-PRO
) O
to O
positive B-PRO
temperature I-PRO
coefficient I-PRO
( O
PTC B-PRO
) O
is O
seen O
mainly O
due O
to O
the O
percolation O
of O
Te B-MAT
- O
rich O
crystallite B-DSC
surfaces I-DSC
, O
which O
evolve O
as O
the O
annealing B-SMT
temperature O
increases O
. O


while O
the O
films B-DSC
annealed B-SMT
at O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
shows O
a O
broad O
semiconductor B-PRO
to I-PRO
metallic I-PRO
transition I-PRO
at O
~ O
150K O
and O
200K O
respectively O
, O
the O
thin B-DSC
films I-DSC
annealed B-SMT
at O
<nUm> O
° O
C O
are O
found O
to O
exhibit O
complete O
metallic B-PRO
behavior I-PRO
below O
room O
temperature O
. O


the O
electrical B-PRO
property I-PRO
and O
seebeck B-PRO
coefficient I-PRO
studies O
with O
power B-PRO
factors I-PRO
in O
the O
range O
of O
~ O
<nUm> O
to O
<nUm> O
× O
<nUm> O
− O
<nUm> O
W O
/ 
k2m 
for O
films B-DSC
annealed B-SMT
above O
<nUm> O
° O
C O
suggest O
that O
the O
vacuum B-SMT
annealed I-SMT
Bi2Te3 B-MAT
thin B-DSC
films I-DSC
are O
favorable O
for O
thermoelectric B-APL
applications I-APL
. O


electrical B-PRO
, O
optical B-PRO
and O
structural B-PRO
properties I-PRO
of O
Al B-MAT
- O
doped B-DSC
OZn B-MAT
thin B-DSC
films I-DSC
grown O
on O
GaAs(111)B B-MAT
substrates B-DSC
by O
pulsed B-SMT
laser I-SMT
deposition I-SMT


we O
report O
on O
the O
characteristics O
of O
Al B-MAT
- O
doped B-DSC
OZn B-MAT
thin B-DSC
films I-DSC
( O
AZO B-MAT
) O
grown O
on O
GaAs(111)B B-MAT
substrates B-DSC
using O
pulsed B-SMT
laser I-SMT
deposition I-SMT
. O


the O
influence O
of O
ambient O
gas O
composition O
, O
overall O
pressure O
, O
and O
growth O
temperature O
on O
the O
electrical B-PRO
, O
structural B-PRO
and O
optical B-PRO
properties I-PRO
of O
100nm-thin O
films B-DSC
grown O
from O
a O
OZn B-MAT
target O
with O
2wt. O
% O
Al B-MAT
were O
investigated O
. O


growth O
in O
a O
<nUm> O
Pa O
pure O
O O
ambient O
was O
found O
to O
be O
superior O
to O
films B-DSC
grown O
in O
Ar O
ambient O
or O
vacuum O
with O
respect O
to O
their O
electrical B-PRO
properties I-PRO
. O


as-grown B-DSC
AZO B-MAT
films B-DSC
showed O
a O
low O
resistivity B-PRO
on O
the O
order O
of O
10-4 O
ocm O
. O


post-deposition O
annealing B-SMT
in-situ O
showed O
no O
improvement O
of O
the O
transport B-PRO
properties I-PRO
, O
irrespective O
of O
annealing B-SMT
temperature O
and O
ambient O
gas O
. O


At O
high O
substrate B-DSC
temperatures O
, O
the O
interaction O
with O
the O
GaAs(111)B B-MAT
substrate B-DSC
seemed O
to O
affect O
the O
growth O
and O
conductivity B-PRO
of O
the O
AZO B-MAT
films B-DSC
. O


cyclotron-resonance B-PRO
line I-PRO
splitting I-PRO
in O
heavily B-DSC
doped I-DSC
p B-PRO
- I-PRO
type I-PRO
AsGa B-MAT
heterojunctions B-DSC


In O
this O
paper O
, O
we O
report O
on O
submillimeter B-CMT
magneto I-CMT
- I-CMT
absorption I-CMT
studies I-CMT
of O
heavily B-DSC
doped I-DSC
( O
<nUm> O
) O
AlAsGa B-MAT
/ O
AsGa B-MAT
heterojunctions B-DSC
. O


we O
found O
that O
the O
CR B-CMT
spectra O
consist O
of O
two O
branches O
with O
cyclotron-resonance B-PRO
effective I-PRO
masses I-PRO
of O
m B-PRO
= O
<nUm> O
mo O
and O
<nUm> O
mo O
. O


these O
values O
are O
close O
to O
those O
predicted O
theoretically O
, O
and O
can O
be O
ascribed O
to O
the O
inversion B-PRO
asymmetry I-PRO
- I-PRO
induced I-PRO
spin I-PRO
splitting I-PRO
. O


In O
addition O
, O
we O
observed O
anticrossing B-PRO
features I-PRO
in O
the O
CR B-CMT
spectra O
. O


we O
discuss O
a O
possible O
origin O
of O
such O
CR B-PRO
line I-PRO
behavior I-PRO
as O
a O
coupling O
of O
light O
and O
heavy B-PRO
holes I-PRO
. O


improvement O
in O
the O
oxidation B-PRO
resistance I-PRO
of O
liquid-phase-sintered B-SMT
silicon B-MAT
carbide I-MAT
with O
aluminum B-MAT
oxide I-MAT
additions O


improvement O
in O
oxidation B-PRO
resistance I-PRO
of O
silicon B-MAT
carbide I-MAT
( O
CSi B-MAT
) O
with O
aluminum B-MAT
oxide I-MAT
( O
Al2O3 B-MAT
) O
additions O
was O
investigated O
using O
high O
purity O
starting O
materials O
. O


green O
compacts O
of O
CSi B-MAT
powders B-DSC
with O
impurity O
of O
approximately O
<nUm> O
ppm O
metal O
mixed O
with O
a O
high O
purity O
Al2O3 B-MAT
powder B-DSC
were O
pressureless B-SMT
- I-SMT
sintered I-SMT
followed O
by O
hot B-SMT
- I-SMT
isostatic I-SMT
pressing I-SMT
to O
a O
density B-PRO
of O
> O
<nUm> O
% O
. O


the O
sinterability B-PRO
and O
the O
strength B-PRO
of O
the O
CSi B-MAT
were O
similar O
to O
those O
from O
the O
CSi B-MAT
powder B-DSC
with O
impurity O
of O
<nUm> O
ppm O
metal O
. O


with O
decreasing O
Al2O3 B-MAT
content O
and O
metallic B-PRO
impurity O
, O
the O
oxidation B-PRO
resistance I-PRO
of O
the O
CSi B-MAT
increased O
. O


CSi B-MAT
with I-MAT
1.4mass I-MAT
% I-MAT
Al2O3 I-MAT
content O
had O
a O
parabolic O
oxidation B-PRO
rate I-PRO
constant I-PRO
of O
<nUm> O
× O
10-12 O
kg2m-4s-1 O
for O
400h O
oxidation B-SMT
at O
<nUm> O
° O
C O
in O
dry O
air O
, O
which O
is O
lower O
than O
those O
reported O
for O
other O
LPS B-SMT
- O
CSi B-MAT
and O
comparable O
to O
that O
of O
CVD B-SMT
- O
CSi B-MAT
. O


the O
strength B-PRO
differential I-PRO
effect I-PRO
in O
different O
heat B-SMT
treatment I-SMT
conditions O
of O
the O
steels B-MAT
42CrMoS4 I-MAT
and O
100Cr6 B-MAT


it O
is O
well O
known O
that O
a O
number O
of O
metals O
show O
different O
mechanical B-PRO
properties I-PRO
under O
tensile O
and O
compressive O
loading O
. O


In O
case O
of O
steel B-MAT
this O
asymmetry O
is O
called O
“ O
strength B-PRO
differential I-PRO
effect I-PRO
” O
( O
SD B-PRO
- I-PRO
effect I-PRO
) O
. O


In O
this O
work O
, O
the O
steels B-MAT
42CrMoS4 I-MAT
( I-MAT
<nUm> I-MAT
, I-MAT
AISI I-MAT
<nUm> I-MAT
) I-MAT
and O
100Cr6 B-MAT
( I-MAT
<nUm> I-MAT
, I-MAT
AISI I-MAT
<nUm> I-MAT
) I-MAT
are O
investigated O
in O
different O
heat B-SMT
treatment I-SMT
conditions O
with O
high O
and O
low O
strengths B-PRO
as O
well O
as O
different O
microstructures B-PRO
. O


both O
, O
tensile B-PRO
and O
compressive B-PRO
stress I-PRO
– I-PRO
strain I-PRO
curves I-PRO
are O
compared O
and O
evaluated O
. O


it O
was O
found O
that O
the O
SD B-PRO
- I-PRO
effect I-PRO
mainly O
occurs O
in O
high O
- O
strength B-PRO
quenched B-SMT
and O
tempered B-SMT
conditions O
. O


A O
bainite O
condition O
almost O
shows O
the O
absence O
of O
a O
SD B-PRO
- I-PRO
effect I-PRO
. O


At O
low O
- O
strength B-PRO
normalized O
conditions O
a O
SD B-PRO
- I-PRO
effect I-PRO
can O
be O
observed O
, O
too O
. O


In O
these O
cases O
, O
the O
different O
length O
of O
the O
luders B-PRO
strain I-PRO
is O
assumed O
to O
be O
the O
reason O
of O
the O
SD B-PRO
- I-PRO
effect I-PRO
. O


the O
influences O
of O
rare O
earth O
content O
on O
the O
microstructure B-PRO
and O
mechanical B-PRO
properties I-PRO
of O
Mg B-MAT
– I-MAT
7Zn I-MAT
– I-MAT
5Al I-MAT
alloy B-DSC


the O
influences O
of O
rare O
earth O
( O
RE O
) O
on O
the O
microstructure B-PRO
and O
mechanical B-PRO
properties I-PRO
of O
Mg B-MAT
– I-MAT
7Zn I-MAT
– I-MAT
5Al I-MAT
alloy B-DSC
were O
studied O
. O


the O
results O
indicate O
that O
both O
the O
dendrite B-DSC
and O
grain B-PRO
size I-PRO
of O
the O
alloy B-DSC
can O
be O
refined O
by O
low O
RE O
addition O
. O


the O
Al2REZn2 B-MAT
phase O
will O
be O
formed O
with O
increasing O
the O
RE B-PRO
content I-PRO
, O
however O
the O
high O
RE O
addition O
results O
in O
the O
grain B-PRO
coarsening I-PRO
in O
the O
alloy B-DSC
due O
to O
the O
decrease O
of O
the O
contribution O
of O
Al B-MAT
and O
Zn B-MAT
solutes O
on O
the O
grain B-PRO
refinement I-PRO
. O


the O
strengthening B-PRO
and O
weakening B-PRO
mechanisms I-PRO
caused O
by O
RE O
addition O
only O
lead O
to O
the O
obviously O
improve O
on O
the O
room O
temperature O
ultimate B-PRO
tensile I-PRO
strength I-PRO
. O


the O
mechanical B-PRO
properties I-PRO
of O
the O
studied O
alloys B-DSC
can O
be O
improved O
by O
aging B-SMT
treatment I-SMT
, O
and O
the O
aged B-SMT
Mg B-MAT
– I-MAT
7Zn I-MAT
– I-MAT
5Al I-MAT
– I-MAT
2RE I-MAT
alloy B-DSC
exhibits O
optimal O
mechanical B-PRO
properties I-PRO
at O
room O
temperature O
. O


nitrogen O
effect O
on O
elastic B-PRO
constants I-PRO
of O
f.c.c. B-SPL
Fe-18Cr-19Mn B-MAT
alloys B-DSC


previously O
, O
the O
authors O
studied O
effects O
of O
interstitial B-PRO
carbon-plus-nitrogen I-PRO
( O
C B-PRO
+ I-PRO
N I-PRO
) O
on O
the O
elastic B-PRO
constants I-PRO
of O
f.c.c. B-SPL
Fe-18Cr-10Ni-1Mn B-MAT
alloys B-DSC
. O


consistent O
with O
a O
volume O
increase O
, O
all O
the O
elastic B-PRO
stiffnesses I-PRO
decrease O
with O
increasing O
C B-MAT
+ O
N O
. O


the O
present O
alloys B-DSC
show O
different O
behavior O
: O
although O
volume O
increases O
, O
interstitial O
nitrogen O
atoms O
increase O
the O
bulk B-PRO
modulus I-PRO
. O


the O
peculiar O
bulk-modulus-electron B-PRO
- I-PRO
concentration I-PRO
behavior I-PRO
( O
bvs B-PRO
. O


ne B-PRO
of O
3d O
electron O
elements O
is O
described O
. O


At O
first O
B B-PRO
increases O
with O
increasing O
ne B-PRO
; O
beyond O
a O
critical B-PRO
concentration I-PRO
, O
B B-PRO
decreases O
rapidly O
. O


application O
of O
ducastelle B-CMT
's I-CMT
model I-CMT
( O
bandstructure B-PRO
and O
repulsion B-PRO
energies I-PRO
) O
shows O
that O
interstitial O
nitrogen O
increases O
the O
bandstructure B-PRO
contribution O
to O
the O
bulk B-PRO
modulus I-PRO
. O


microstructure B-PRO
and O
tribological B-PRO
properties I-PRO
of O
NiCrAlY-Mo-Ag B-MAT
composite B-DSC
by O
vacuum B-SMT
hot I-SMT
- I-SMT
press I-SMT
sintering I-SMT


the O
NiCrAlY-Mo-Ag B-MAT
composite B-DSC
was O
fabricated O
by O
vacuum B-SMT
hot I-SMT
- I-SMT
pressing I-SMT
sintering I-SMT
. O


the O
friction B-PRO
and O
wear B-PRO
behaviour I-PRO
of O
the O
composite B-DSC
were O
investigated O
from O
room O
temperature O
to O
<nUm> O
° O
C O
. O


furthermore O
, O
the O
wear B-PRO
mechanism I-PRO
was O
studied O
over O
this O
wide O
range O
of O
temperatures O
. O


At O
the O
same O
time O
, O
the O
compressive B-PRO
properties I-PRO
of O
the O
composite B-DSC
were O
researched O
. O


the O
composition B-PRO
and O
microstructure B-PRO
of O
the O
composite B-DSC
were O
analyzed O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
scanning B-CMT
election I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
. O


At O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
, O
the O
tribo O
- O
chemical O
reaction O
occurred O
on O
the O
worn O
surface B-DSC
and O
formed O
a O
high O
- O
temperature O
tribo B-DSC
- I-DSC
layer I-DSC
based O
on O
NiO B-MAT
and O
silver B-MAT
molybdates I-MAT
, O
which O
could O
effectively O
reduce O
the O
friction B-PRO
coefficient I-PRO
and O
wear B-PRO
rate I-PRO
of O
the O
composite B-DSC
. O


the O
existence O
of O
broken O
particles B-DSC
and O
the O
pullout O
of O
hard B-PRO
phase I-PRO
particles B-DSC
were O
seen O
on O
the O
fracture B-PRO
surface I-PRO
of O
the O
composite B-DSC
, O
which O
were O
determined O
by O
the O
interfacial B-PRO
bonding I-PRO
strength I-PRO
. O


magnetic B-PRO
behaviour I-PRO
in O
InNi4U B-MAT


we O
report O
the O
results O
of O
magnetic B-PRO
susceptibility I-PRO
( O
<nUm> O
– O
<nUm> O
K O
) O
, O
d.c. B-PRO
electrical I-PRO
resistivity I-PRO
( O
<nUm> O
– O
<nUm> O
K O
) O
and O
low O
- O
temperature O
heat B-PRO
capacity I-PRO
( O
<nUm> O
– O
<nUm> O
K O
) O
measurements O
on O
the O
cubic B-SPL
compound O
InNi4U B-MAT
, O
which O
has O
the O
same O
crystal B-PRO
structure I-PRO
as O
Ni5U B-MAT
. O


No O
evidence O
of O
antiferromagnetic B-PRO
ordering I-PRO
in O
InNi4U B-MAT
is O
found O
down O
to O
<nUm> O
K O
, O
in O
contrast O
with O
previous O
reports O
. O


this O
suggests O
that O
5f-3d B-PRO
hybridization I-PRO
is O
still O
dominant O
in O
this O
compound O
as O
in O
Ni5U B-MAT
. O


twins B-PRO
in O
cryomilled B-SMT
and O
spark B-SMT
plasma I-SMT
sintered I-SMT
Cu B-MAT
– I-MAT
Zn I-MAT
– I-MAT
Al I-MAT


nanostructured B-DSC
Cu B-MAT
– I-MAT
30wt. I-MAT
% I-MAT
Zn I-MAT
– I-MAT
0.8wt. I-MAT
% I-MAT
Al I-MAT
alloy B-DSC
( O
commercial O
designation O
brass B-MAT
<nUm> I-MAT
) O
was O
fabricated O
by O
cryomilling B-SMT
of O
brass B-MAT
powders B-DSC
and O
subsequent O
spark B-SMT
plasma I-SMT
sintering I-SMT
( O
SPS B-SMT
) O
. O


cryomilling B-SMT
resulted O
in O
a O
high O
density O
of O
deformation B-PRO
twins I-PRO
with O
an O
average O
thickness O
as O
small O
as O
<nUm> O
nm O
. O


following O
SPS B-SMT
, O
the O
bulk B-DSC
samples O
exhibited O
10vol. O
% O
of O
twins B-PRO
with O
an O
average O
twin B-PRO
thickness I-PRO
of O
<nUm> O
nm O
and O
unusual O
twin B-PRO
morphology I-PRO
, O
which O
are O
rationalized O
on O
the O
basis O
of O
grain B-PRO
boundary I-PRO
migration I-PRO
, O
twin B-PRO
boundary I-PRO
migration I-PRO
, O
recrystallization O
and O
detwinning O
during O
SPS B-SMT
. O


A O
selectively O
decorated O
Ti B-MAT
- I-MAT
FeHO2 I-MAT
co-catalyst B-APL
for O
a O
highly O
efficient O
porous B-DSC
hematite B-MAT
- O
based O
water B-APL
splitting I-APL
system O


we O
report O
an O
efficient O
Ti B-MAT
- O
doped B-DSC
FeHO2 B-MAT
( O
Ti B-MAT
- I-MAT
FeHO2 I-MAT
) O
co-catalyst B-APL
applied O
on O
SiOx B-MAT
thin B-DSC
layer I-DSC
coated B-SMT
Ti B-MAT
- O
doped B-DSC
porous I-DSC
Fe2O3 B-MAT
( O
Ti-PH B-MAT
) O
to O
realize O
an O
excellent O
water B-APL
splitting I-APL
photoelectrochemical I-APL
cell I-APL
. O


the O
SiOx B-MAT
thin B-DSC
layer I-DSC
coated B-SMT
on O
Ti B-MAT
- O
doped B-DSC
porous I-DSC
hematite B-MAT
induces O
preferential O
deposition O
of O
the O
Ti B-MAT
- I-MAT
FeHO2 I-MAT
co-catalyst B-APL
on O
the O
inner O
pores O
of O
Ti-PH B-MAT
, O
which O
enhances O
oxygen B-PRO
evolution I-PRO
reaction I-PRO
performance I-PRO
without O
interrupting O
the O
absorption O
of O
light O
by O
hematite B-MAT
. O


the O
photocurrent B-PRO
density I-PRO
of O
Ti B-MAT
- I-MAT
FeHO2 I-MAT
/ O
Ti-PH B-MAT
is O
<nUm> O
mA O
cm-2 
at O
<nUm> O
V O
vs O
. O


RHE O
, O
<nUm> O
times O
higher O
than O
that O
of O
conventional O
worm B-DSC
- I-DSC
like I-DSC
hematite B-MAT
, O
with O
excellent O
long B-PRO
- I-PRO
term I-PRO
stability I-PRO
for O
<nUm> O
h O
. O


this O
represents O
the O
state O
- O
of O
- O
the O
- O
art O
performance O
among O
hematite B-MAT
- O
based O
systems O
with O
the O
exception O
of O
very O
few O
studies O
that O
used O
precious O
materials O
. O


importantly O
, O
the O
proposed O
photoanode B-APL
can O
be O
fabricated O
by O
a O
simple O
and O
cost O
- O
efficient O
solution B-SMT
- I-SMT
based I-SMT
method I-SMT
, O
i.e. O
with O
cheap O
precursors O
and O
without O
any O
specific O
equipment O
. O


design O
and O
laser B-SMT
cladding I-SMT
of O
Ti B-MAT
– I-MAT
Fe I-MAT
– I-MAT
Zr I-MAT
alloy B-DSC
coatings B-APL


Ti B-MAT
– I-MAT
Fe I-MAT
– I-MAT
Zr I-MAT
alloys B-DSC
were O
designed O
using O
a O
“ B-CMT
cluster-plus-glue I-CMT
- I-CMT
atom I-CMT
” I-CMT
model I-CMT
, O
and O
the O
alloy B-DSC
coatings B-APL
were O
prepared O
by O
laser B-SMT
cladding I-SMT
on O
TA15 B-MAT
titanium I-MAT
substrate B-DSC
. O


when O
the O
Zr B-PRO
content I-PRO
is O
less O
than O
<nUm> O
at. O
% 
, O
the O
cladding B-APL
layers I-APL
mainly O
consist O
of O
FeTi B-MAT
dendrites B-DSC
and O
b-(Ti,Zr)+TiFe+Zr2Fe B-MAT
eutectics B-DSC
. O


with O
the O
increase O
of O
the O
Zr B-PRO
content I-PRO
, O
the O
grain O
is O
refined O
, O
and O
the O
volume O
fraction O
of O
the O
eutectics B-DSC
has O
increased O
dramatically O
. O


single B-DSC
eutectic I-DSC
structure O
has O
been O
obtained O
as O
the O
Zr B-PRO
content I-PRO
increases O
to O
<nUm> O
at. O
% 
. O


when O
the O
Zr B-PRO
content I-PRO
is O
higher O
than O
the O
critical O
point O
, O
the O
cladding B-APL
layers I-APL
are O
mainly O
composed O
of O
b-(Ti B-MAT
, I-MAT
Zr I-MAT
) I-MAT
dendrites B-DSC
and O
b-(Ti,Zr)+TiFe+Zr2Fe B-MAT
eutectics B-DSC
. O


compared O
with O
the O
cladding B-APL
layers I-APL
with O
Zr B-PRO
content I-PRO
less O
than O
<nUm> O
at. O
% 
, O
the O
grain O
is O
coarse O
, O
and O
the O
volume O
fraction O
of O
the O
eutectics B-DSC
has O
decreased O
significantly O
. O


the O
results O
suggest O
that O
the O
cladding B-APL
layer I-APL
with O
7.1at. O
% O
Zr B-MAT
has O
the O
highest O
hardness B-PRO
value O
and O
the O
best O
tribological B-PRO
properties I-PRO
. O


nanoscale B-DSC
precipitates I-DSC
in O
magnetostrictive B-PRO
fe1-x B-MAT
Ga I-MAT
x I-MAT
alloys B-DSC
for O
<nUm> O
< O
x O
< O
<nUm> O


we O
report O
high B-CMT
resolution I-CMT
transmission I-CMT
electron I-CMT
microscopy I-CMT
( O
HRTEM B-CMT
) O
investigations O
of O
magnetostrictive B-PRO
Fe1-xGax B-MAT
alloys B-DSC
. O


our O
findings O
show O
the O
presence O
of O
nanometer O
- O
sized O
( O
< O
<nUm> O
nm O
) O
inclusions B-PRO
of O
a O
DO3 B-MAT
- O
like O
structure B-PRO
within O
an O
A2 O
matrix O
phase O
for O
a O
composition B-PRO
of O
<nUm> O
< O
x O
< O
<nUm> O
, O
whose O
interphase B-DSC
interfaces I-DSC
are O
oriented O
along O
[110] O
. O


the O
density B-PRO
of O
the O
nano-precipitates B-DSC
increased O
with O
increasing O
Ga B-PRO
content I-PRO
, O
however O
the O
size O
of O
the O
nano-precipitates B-DSC
was O
nearly O
independent O
of O
x O
. O


preparation O
of O
the O
metastable B-PRO
high O
pressure O
g-R2S3 B-MAT
phase I-MAT
( I-MAT
REr I-MAT
, I-MAT
Tm I-MAT
, I-MAT
Yb I-MAT
and I-MAT
Lu I-MAT
) I-MAT
by O
mechanical B-SMT
milling I-SMT


the O
preparation O
of O
the O
metastable B-PRO
crystalline B-DSC
high O
pressure O
polymorphs O
of O
R2S3 B-MAT
, I-MAT
where I-MAT
REr I-MAT
, I-MAT
Tm I-MAT
, I-MAT
Yb I-MAT
and I-MAT
Lu I-MAT
, O
was O
investigated O
at O
room O
temperature O
by O
mechanical B-SMT
milling I-SMT
( O
MM B-SMT
) O
. O


for O
Er2S3 B-MAT
and O
S3Yb2 B-MAT
the O
pure O
metastable B-PRO
high O
pressure O
g-phases O
were O
obtained O
by O
MM B-SMT
whereas O
for O
the O
S3Tm2 B-MAT
and O
Lu2S3 B-MAT
samples O
the O
metastable B-PRO
high O
pressure O
y-phases O
coexisted O
with O
the O
corresponding O
equilibrium O
ambient O
polymorphic O
phase O
. O


surface B-SMT
graphitization I-SMT
process O
of O
SiC(0001) B-MAT
single B-DSC
- I-DSC
crystal I-DSC
at O
elevated O
temperatures O


the O
SiC(0001) B-MAT
single B-DSC
- I-DSC
crystal I-DSC
has O
been O
studied O
in O
terms O
of O
changes O
in O
surface B-PRO
composition I-PRO
in O
the O
temperature O
range O
of O
<nUm> O
– O
<nUm> O
° O
C O
by O
means O
of O
auger B-CMT
electron I-CMT
spectroscopy I-CMT
( O
AES B-CMT
) O
. O


the O
carbon B-PRO
concentration I-PRO
at O
the O
surface B-DSC
increased O
with O
temperature O
. O


this O
increase O
was O
split O
up O
into O
two O
processes O
. O


one O
was O
an O
initial O
fast O
process O
and O
the O
next O
was O
a O
slow O
one O
, O
observed O
above O
<nUm> O
° O
C O
. O


it O
was O
concluded O
that O
the O
former O
was O
thermodynamic O
and O
that O
the O
latter O
was O
caused O
by O
evaporation O
of O
silicon B-MAT
atoms O
. O


activation B-PRO
energies I-PRO
for O
the O
slow O
process O
of O
surface B-DSC
graphitization B-SMT
and O
for O
evaporation O
of O
silicon B-MAT
, O
which O
existed O
in O
the O
near O
- O
surface B-DSC
region O
before O
heat B-SMT
treatment I-SMT
, O
were O
found O
to O
be O
<nUm> O
and O
<nUm> O
eV O
, O
respectively O
. O


heats B-PRO
of I-PRO
solution I-PRO
/ I-PRO
substitution I-PRO
in O
NO3Tl B-MAT
and O
CsNO3 B-MAT
crystals B-DSC
and O
in O
NO3Rb B-MAT
and O
CsNO3 B-MAT
crystals B-DSC
from O
heats B-PRO
of I-PRO
transition I-PRO
: O
the O
complete O
phase B-PRO
diagrams I-PRO
of O
NO3Tl B-MAT
– I-MAT
CsNO3 I-MAT
and O
NO3Rb B-MAT
– I-MAT
CsNO3 I-MAT
systems O


from O
measurements O
of O
the O
decrease O
in O
the O
heat B-PRO
( I-PRO
enthalpy I-PRO
) I-PRO
of I-PRO
transition I-PRO
in O
the O
solid B-DSC
phase I-DSC
using O
differential B-CMT
scanning I-CMT
calorimetry I-CMT
, O
the O
apparent O
molar B-PRO
heats I-PRO
of I-PRO
solution I-PRO
, O
slope B-PRO
DHt I-PRO
/ I-PRO
x I-PRO
, O
the O
partial O
molar B-PRO
heats I-PRO
of I-PRO
solution I-PRO
at O
infinite O
dilution O
, O
χ B-PRO
, O
and O
the O
heats B-PRO
of I-PRO
solution I-PRO
, O
DHs B-PRO
° I-PRO
, O
of O
tl+ O
in O
CsNO3 B-MAT
crystal B-DSC
and O
cs+ O
in O
NO3Tl B-MAT
crystal B-DSC
and O
rb+ O
in O
CsNO3 B-MAT
crystal B-DSC
and O
cs+ O
in O
NO3Rb B-MAT
crystal B-DSC
along O
with O
their O
recovered O
lattice B-PRO
energies I-PRO
, O
DHL B-PRO
° I-PRO
, O
are O
reported O
. O


DHs B-PRO
° I-PRO
of O
tl+ O
and O
rb+ O
in O
CsNO3 B-MAT
crystal B-DSC
are O
each O
found O
to O
be O
negligible O
or O
zero O
representing O
an O
ideal O
solid B-DSC
solution I-DSC
, O
i.e. O
DHmix B-PRO
= O
<nUm> O
. O


the O
complete O
phase B-PRO
diagrams I-PRO
of O
the O
NO3Tl B-MAT
– I-MAT
CsNO3 I-MAT
and O
NO3Rb B-MAT
– I-MAT
CsNO3 I-MAT
systems O
with O
details O
of O
the O
sub-solidus O
regions O
are O
included O
. O


the O
properties O
of O
Tl(1-x)CsxNO3 B-MAT
and O
Rb(1-x)CsxNO3 B-MAT
compositions B-PRO
are O
discussed O
in O
terms O
of O
a O
‘ O
mixed B-DSC
crystal I-DSC
’ O
or O
‘ O
crystalline B-DSC
solid I-DSC
solution I-DSC
’ O
in O
relation O
to O
parallel O
compositions B-PRO
of O
Tl(1-x)RbxNO3 B-MAT
. O


improved O
light B-PRO
extraction I-PRO
efficiency I-PRO
of O
GaN B-MAT
- O
based O
light B-APL
emitting I-APL
diodes I-APL
using O
one O
and O
two O
interfaces B-DSC
of O
ITO B-MAT
/ O
OZn B-MAT
layer B-DSC
texturing O


light B-PRO
extraction I-PRO
efficiency I-PRO
of O
GaN B-MAT
- O
based O
light B-APL
emitting I-APL
diodes I-APL
( O
LEDs B-APL
) O
has O
improved O
significantly O
by O
using O
ITO B-MAT
/ O
OZn B-MAT
layer B-DSC
texturing O
. O


we O
have O
deliberately O
designed O
and O
successfully O
fabricated O
GaN B-MAT
- O
based O
LEDs B-APL
having O
one O
and O
two O
interfaces B-DSC
of O
ITO B-MAT
/ O
OZn B-MAT
layer B-DSC
texturing O
in O
the O
device O
structure O
. O


it O
was O
found O
that O
the O
light B-PRO
extraction I-PRO
efficiencies I-PRO
of O
one O
and O
two O
interfaces B-DSC
of O
ITO B-MAT
/ O
OZn B-MAT
- O
layer B-DSC
texturing O
LEDs B-APL
were O
<nUm> O
% O
and O
<nUm> O
% O
at O
<nUm> O
mA O
of O
current O
injection O
, O
respectively O
. O


creating O
the O
chances O
of O
multiple O
light O
scattering O
at O
more O
than O
one O
interface O
is O
playing O
a O
major O
role O
to O
enhance O
light B-PRO
output I-PRO
power I-PRO
of O
the O
device O
. O


the O
source O
of O
the O
enhanced O
light B-PRO
output I-PRO
power I-PRO
is O
also O
discussed O
. O


plasma B-SMT
nitriding I-SMT
of O
AISI B-MAT
316L I-MAT
austenitic B-SPL
stainless B-MAT
steels I-MAT
at O
anodic O
potential O


plasma B-SMT
nitriding I-SMT
experiments O
were O
carried O
out O
with O
pulsed B-SMT
dc I-SMT
glow I-SMT
discharge I-SMT
plasma I-SMT
in O
ammonia O
atmosphere O
at O
temperatures O
ranging O
from O
<nUm> O
to O
<nUm> O
° O
C O
for O
4h O
. O


In O
this O
process O
, O
the O
AISI B-MAT
316L I-MAT
austenitic B-SPL
stainless B-MAT
steel I-MAT
samples O
were O
set O
on O
a O
plate O
at O
anodic O
potential O
. O


the O
phase B-PRO
composition I-PRO
, O
the O
thickness O
and O
morphology B-PRO
of O
the O
nitrided B-SMT
layer B-DSC
, O
as O
well O
as O
its O
surface B-PRO
hardness I-PRO
, O
were O
investigated O
using O
x-ray B-CMT
diffraction I-CMT
, O
glancing B-CMT
angle I-CMT
x-ray I-CMT
diffraction I-CMT
, O
optical B-CMT
microscopy I-CMT
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
and O
microhardness B-CMT
tester I-CMT
. O


the O
results O
showed O
that O
the O
microstructure B-PRO
and O
phase B-PRO
composition I-PRO
depended O
on O
the O
nitriding B-SMT
temperatures O
. O


In O
particular O
, O
a O
nitrided B-SMT
layer B-DSC
consisting O
of O
3-layered O
structure O
was O
formed O
on O
the O
sample O
nitrided B-SMT
at O
<nUm> O
and O
<nUm> O
° O
C O
. O


the O
surface B-PRO
microhardness I-PRO
values O
and O
the O
thickness O
of O
the O
hardened B-SMT
layers B-DSC
increased O
as O
the O
nitriding B-SMT
temperature O
increased O
. O


In O
addition O
, O
the O
corrosion B-PRO
and O
wear B-PRO
properties I-PRO
of O
the O
untreated O
and O
nitrided B-SMT
samples O
were O
evaluated O
. O


the O
results O
showed O
that O
anodic B-SMT
plasma I-SMT
nitriding I-SMT
of O
austenitic B-SPL
stainless B-MAT
steel I-MAT
was O
a O
suitable O
process O
for O
improving O
the O
surface B-PRO
hardness I-PRO
and O
wear B-PRO
resistance I-PRO
properties I-PRO
without O
deteriorating O
corrosion B-PRO
resistance I-PRO
. O


anisotropy B-PRO
of O
young B-PRO
's I-PRO
modulus I-PRO
and O
tensile B-PRO
properties I-PRO
in O
cold B-SMT
rolled I-SMT
a' B-SPL
martensite I-SPL
Ti B-MAT
– I-MAT
V I-MAT
– I-MAT
Sn I-MAT
alloys B-DSC


young B-PRO
's I-PRO
modulus I-PRO
and O
tensile B-PRO
properties I-PRO
of O
cold B-SMT
rolled I-SMT
Ti B-MAT
– I-MAT
<nUm> I-MAT
mass I-MAT
% I-MAT
V I-MAT
and O
( B-MAT
Ti I-MAT
– I-MAT
<nUm> I-MAT
mass I-MAT
% I-MAT
V I-MAT
) I-MAT
– I-MAT
<nUm> I-MAT
mass I-MAT
% I-MAT
Sn I-MAT
alloy B-DSC
plates I-DSC
consisting O
of O
a' B-SPL
martensite I-SPL
were O
investigated O
as O
a O
function O
of O
tensile O
axis O
orientation O
in O
this O
work O
. O


A O
single O
phase O
of O
a' B-SPL
( O
hcp B-SPL
) O
martensite B-SPL
is O
obtained O
in O
Ti B-MAT
– I-MAT
<nUm> I-MAT
mass I-MAT
% I-MAT
V I-MAT
and O
( B-MAT
Ti I-MAT
– I-MAT
<nUm> I-MAT
mass I-MAT
% I-MAT
V I-MAT
) I-MAT
– I-MAT
<nUm> I-MAT
mass I-MAT
% I-MAT
Sn I-MAT
alloys B-DSC
by O
quenching B-SMT
after O
solution B-SMT
treatment I-SMT
. O


by O
<nUm> O
% O
cold B-SMT
rolling I-SMT
, O
acicular O
a' B-SPL
martensite I-SPL
microstructures B-PRO
change O
into O
extremely O
refined O
dislocation O
cell O
- O
like O
structure O
with O
an O
average O
size O
of O
<nUm> O
nm O
, O
accompanied O
with O
the O
development O
of O
cold B-SMT
rolling I-SMT
texture O
in O
which O
the O
basal O
plane O
normal O
is O
tilted O
from O
the O
plate O
normal O
direction O
( O
ND O
) O
toward O
transverse O
direction O
( O
TD O
) O
at O
angles O
of O
± O
<nUm> O
° O
for O
Ti B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
V I-MAT
alloy B-DSC
and O
± O
<nUm> O
° O
for O
( B-MAT
Ti I-MAT
– I-MAT
8mass I-MAT
% I-MAT
V I-MAT
) I-MAT
– I-MAT
<nUm> I-MAT
mass I-MAT
% I-MAT
Sn I-MAT
alloy B-DSC
. O


No O
apparent O
anisotropy O
of O
young B-PRO
's I-PRO
modulus I-PRO
( O
e B-PRO
) O
is O
observed O
for O
as-quenched B-DSC
Ti B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
V I-MAT
( O
e B-PRO
= O
<nUm> O
– O
<nUm> O
GPa O
) O
and O
( B-MAT
Ti I-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
V)-4 I-MAT
% I-MAT
Sn I-MAT
( O
e B-PRO
= O
<nUm> O
– O
<nUm> O
GPa O
) O
. O


In O
contrast O
, O
young B-PRO
's I-PRO
modulus I-PRO
increases O
with O
increasing O
angle O
from O
the O
rolling B-SMT
direction O
( O
RD O
) O
to O
TD O
for O
cold B-SMT
rolled I-SMT
Ti B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
V I-MAT
( O
e B-PRO
= O
<nUm> O
– O
<nUm> O
GPa O
) O
and O
( B-MAT
Ti I-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
V I-MAT
) I-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Sn I-MAT
( O
e B-PRO
= O
<nUm> O
– O
<nUm> O
GPa O
) O
. O


the O
observed O
anisotropy O
of O
young B-PRO
's I-PRO
modulus I-PRO
can O
be O
reasonably O
explained O
in O
terms O
of O
the O
cold B-SMT
rolling I-SMT
a' B-PRO
texture I-PRO
. O


<nUm> O
% O
proof B-PRO
stress I-PRO
and O
tensile B-PRO
strength I-PRO
are O
independent O
of O
tensile O
orientation O
for O
cold B-SMT
rolled I-SMT
Ti B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
V I-MAT
and O
( B-MAT
Ti I-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
V I-MAT
) I-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Sn I-MAT
alloys B-DSC
. O


In O
contrast O
, O
larger O
elongation B-PRO
to I-PRO
fracture I-PRO
is O
obtained O
in O
specimens O
deviated O
by O
<nUm> O
° O
, O
<nUm> O
° O
and O
<nUm> O
° O
from O
RD O
than O
by O
<nUm> O
° O
, O
<nUm> O
° O
and O
<nUm> O
° O
. O


scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
fractographs O
reveal O
that O
quasi-cleavage O
- O
like O
fracture O
plane O
appears O
in O
<nUm> O
° O
specimen O
of O
cold B-SMT
rolled I-SMT
Ti B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
V I-MAT
which O
shows O
brittle B-PRO
fracture I-PRO
and O
other O
specimens O
of O
cold B-SMT
rolled I-SMT
Ti B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
V I-MAT
and O
( B-MAT
Ti I-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
V I-MAT
) I-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Sn I-MAT
alloys B-DSC
are O
fractured O
accompanied O
with O
necking O
and O
dimple O
formation O
. O


it O
is O
suggested O
from O
these O
results O
that O
brittle B-PRO
fracture I-PRO
is O
related O
to O
the O
activation O
of O
limited O
number O
of O
slip O
system O
and O
Sn B-MAT
addition O
leads O
to O
the O
activation O
of O
multiple O
slip O
systems O
. O


the O
growth O
of O
transparent B-PRO
conducting I-PRO
OZn B-MAT
films B-DSC
by O
pulsed B-SMT
laser I-SMT
ablation I-SMT


the O
structure B-PRO
of O
undoped O
, O
Al B-MAT
- O
doped B-DSC
OZn B-MAT
( O
AZO B-MAT
) O
and O
Ga B-MAT
- O
doped B-DSC
OZn B-MAT
( O
GZO B-MAT
) O
thin B-DSC
films I-DSC
grown O
on O
sapphire B-MAT
and O
ClNa B-MAT
substrates B-DSC
by O
<nUm> O
nm O
pulsed B-SMT
laser I-SMT
ablation I-SMT
of O
a O
OZn B-MAT
target O
in O
a O
low O
background O
pressure O
of O
oxygen O
was O
investigated O
using O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
and O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
. O


the O
films B-DSC
on O
sapphire B-MAT
grew O
with O
the O
polar O
( O
<nUm> O
) O
orientation O
. O


the O
samples O
deposited O
on O
ClNa B-MAT
, O
at O
substrate B-DSC
temperatures O
above O
<nUm> O
K O
, O
presented O
a O
mixture O
of O
polar B-PRO
and O
non-polar B-PRO
orientations O
. O


all O
samples O
demonstrated O
improved O
crystalline B-PRO
quality I-PRO
, O
as O
measured O
by O
the O
FWHM O
of O
the O
OZn B-MAT
( O
<nUm> O
) O
rocking B-CMT
curve I-CMT
, O
with O
increasing O
substrate B-DSC
temperature O
. O


the O
best O
crystalline B-PRO
quality I-PRO
was O
observed O
for O
the O
undoped O
films B-DSC
. O


the O
inclusion O
of O
Al B-MAT
or O
Ga B-MAT
into O
the O
lattice O
degraded O
the O
crystallinity B-PRO
of O
the O
films B-DSC
, O
but O
allowed O
production O
of O
highly O
conductive B-PRO
films B-DSC
. O


AZO B-MAT
and O
GZO B-MAT
film B-DSC
resistivities B-PRO
were O
measured O
using O
a O
four B-CMT
- I-CMT
point I-CMT
probe I-CMT
method I-CMT
and O
were O
found O
to O
decrease O
with O
increasing O
deposition O
temperature O
. O


film B-DSC
thickness O
was O
determined O
using O
variable B-CMT
angle I-CMT
spectroscopic I-CMT
ellipsometry I-CMT
. O

magnetic B-PRO
susceptibility I-PRO
of O
single B-DSC
crystalline I-DSC
Bi2Sr2CaCu2O8+d B-MAT


the O
static B-PRO
magnetic I-PRO
susceptibility I-PRO
of O
high O
- O
quality O
single B-DSC
- I-DSC
crystalline I-DSC
Bi2Sr2CaCu2O8+d B-MAT
has O
been O
investigated O
form O
<nUm> O
K O
up O
to O
<nUm> O
K O
with O
particular O
interest O
in O
the O
anisotropic B-PRO
behavior I-PRO
. O


above O
the O
superconducting B-PRO
transition I-PRO
a O
large O
diamagnetic B-PRO
contribution O
to O
kh[?] B-PRO
. O


is O
observed O
as O
temperature O
approaches O
Tc B-PRO
, O
whereas O
this O
contribution O
to O
χ B-PRO
/ O
/ O
II O
is O
found O
to O
be O
much O
less O
significant O
. O


this O
result O
is O
attributed O
to O
the O
superconducting B-PRO
fluctuations I-PRO
in O
this O
two O
- O
dimensional O
system O
. O


above O
about O
<nUm> O
K O
, O
the O
susceptibility B-PRO
is O
nearly O
temperature O
independent O
. O


exoelectron B-PRO
emission I-PRO
from O
CuO B-MAT
and O
NiO B-MAT
films B-DSC


the O
trapping O
of O
slow O
electrons O
on O
the O
surface B-DSC
of O
thin B-DSC
CuO B-MAT
films B-DSC
is O
strongly O
dependent O
on O
the O
presence O
of O
alkali O
or O
alkaline O
earth O
metal B-PRO
ions O
and O
adsorbed O
oxygen O
. O


we O
made O
a O
quantitative O
study O
of O
this O
effect O
by O
measuring O
the O
surface B-PRO
potential I-PRO
and O
interpreting O
the O
changes O
in O
the O
profiles O
of O
CuO B-MAT
and O
NiO B-MAT
lines O
obtained O
by O
electron B-CMT
spectroscopy I-CMT
for O
chemical B-CMT
analysis I-CMT
and O
concluded O
that O
the O
number O
of O
electron B-PRO
traps I-PRO
produced O
is O
related O
to O
the O
formation O
of O
a O
highly O
oxidized B-SMT
intergranular B-PRO
compound O
. O


microstructure B-PRO
of O
g-titanium B-MAT
aluminide I-MAT
processed O
by O
selective B-SMT
laser I-SMT
melting I-SMT
at O
elevated O
temperatures O


the O
present O
study O
deals O
with O
a O
b-solidifying O
titanium B-MAT
aluminide I-MAT
processed O
by O
selective B-SMT
laser I-SMT
melting I-SMT
using O
prealloyed B-DSC
g-TiAl B-MAT
powder B-DSC
. O


In O
particular O
the O
effects O
of O
energy O
density O
and O
preheat O
temperature O
on O
chemical B-PRO
composition I-PRO
and O
microstructure B-PRO
were O
investigated O
to O
acquire O
suitable O
process O
parameters O
. O


tensile B-CMT
tests I-CMT
carried O
out O
at O
room O
temperature O
and O
<nUm> O
° O
C O
demonstrate O
that O
strengths B-PRO
in O
the O
range O
of O
conventionally O
produced O
material O
can O
be O
achieved O
. O


