variable O
temperature O
electron B-CMT
paramagnetic I-CMT
resonance I-CMT
studies O
of O
the O
NiZn B-MAT
ferrite I-MAT
/ O
O2Si B-MAT
nanocomposite B-DSC


effects O
of O
the O
silica B-MAT
content O
and O
temperature O
on O
the O
magnetic B-PRO
properties I-PRO
of O
Fe4NiO8Zn B-MAT
/ O
O2Si B-MAT
nanocomposites B-DSC
have O
been O
studied O
by O
electron B-CMT
paramagnetic I-CMT
resonance I-CMT
( O
EPR B-CMT
) O
technique O
. O


the O
peak B-PRO
- I-PRO
to I-PRO
- I-PRO
peak I-PRO
linewidth I-PRO
( O
DHPP B-PRO
) O
, O
g B-PRO
factor I-PRO
and O
spin B-PRO
number I-PRO
( O
NS B-PRO
) O
, O
measured O
at O
room O
temperature O
, O
decreased O
with O
increasing O
O2Si B-MAT
content O
, O
while O
the O
spin B-PRO
– I-PRO
spin I-PRO
relaxation I-PRO
time I-PRO
( O
T2 B-PRO
) O
increased O
. O


furthermore O
, O
these O
parameters O
( O
DHPP B-PRO
, O
g B-PRO
factor I-PRO
, O
NS B-PRO
and O
T2 B-PRO
) O
were O
measured O
as O
function O
of O
temperature O
. O


the O
DHPP B-PRO
, O
g B-PRO
factor I-PRO
and O
NS B-PRO
decreased O
with O
increasing O
temperature O
whereas O
the O
T2 B-PRO
increased O
. O


characterization O
of O
CuInSe2 B-MAT
thin B-DSC
films I-DSC
produced O
by O
thermal B-SMT
annealing I-SMT
of O
stacked O
elemental O
layers B-DSC


polycrystalline B-DSC
thin I-DSC
films I-DSC
of O
CuInSe2 B-MAT
have O
been O
produced O
onto O
glass B-MAT
substrates B-DSC
by O
the O
processing O
of O
stacked O
elemental O
layer B-DSC
followed O
by O
either O
vacuum O
or O
air B-SMT
annealing I-SMT
. O


the O
influence O
of O
the O
composition B-PRO
and O
air B-SMT
annealing I-SMT
temperature O
on O
the O
properties O
of O
the O
material O
has O
been O
investigated O
. O


the O
obvious O
shift O
of O
the O
bandgap B-PRO
energy I-PRO
, O
and O
the O
stepped O
variation O
of O
the O
resistivity B-PRO
were O
observed O
for O
the O
films B-DSC
depending O
upon O
the O
composition B-PRO
. O


the O
effect O
of O
surface B-PRO
morphology I-PRO
on O
the O
response B-PRO
of O
Fe2O3 B-MAT
- O
loaded O
vanadium B-MAT
oxide I-MAT
nanotubes B-DSC
gas B-APL
sensor I-APL


the O
effect O
of O
surface B-PRO
morphology I-PRO
on O
the O
response B-PRO
of O
an O
ethanol B-APL
sensor I-APL
based O
on O
vanadium B-MAT
nanotubes B-DSC
surface I-DSC
loaded O
with O
Fe2O3 B-MAT
nanoparticles B-DSC
( O
Fe2O3 B-MAT
/ O
VONTs B-MAT
) O
was O
investigated O
in O
this O
work O
. O


the O
particle B-PRO
size I-PRO
of O
Fe2O3 B-MAT
loaded O
on O
VONTs B-MAT
was O
varied O
by O
using O
novel O
citric B-SMT
acid I-SMT
- I-SMT
assisted I-SMT
hydrothermal I-SMT
method I-SMT
. O


In O
the O
synthesis O
progress O
, O
citric O
acid O
was O
used O
as O
a O
surfactant O
and O
chelate O
agent O
, O
which O
ensured O
the O
growth O
of O
a O
uniform O
Fe2O3 B-MAT
loading O
on O
the O
nanotubes B-DSC
surface I-DSC
. O


the O
ethanol B-PRO
sensing I-PRO
properties I-PRO
was O
then O
measured O
for O
these O
Fe2O3 B-MAT
/ O
VONTs B-MAT
at O
<nUm> O
– O
<nUm> O
° O
C O
. O


the O
results O
showed O
that O
the O
sensor B-PRO
response I-PRO
increased O
with O
the O
particles B-PRO
size I-PRO
and O
the O
loading O
amount O
of O
Fe2O3 B-MAT
. O


it O
appears O
that O
the O
load O
of O
Fe2O3 B-MAT
on O
the O
VONTs B-MAT
surface B-DSC
increases O
the O
concentration B-PRO
of I-PRO
oxygen I-PRO
vacancies I-PRO
and O
decreases O
the O
concentration B-PRO
of I-PRO
free I-PRO
electrons I-PRO
. O


the O
effects O
of O
morphology B-PRO
on O
the O
sensor B-PRO
resistance I-PRO
were O
interpreted O
in O
terms O
of O
the O
debye B-PRO
length I-PRO
and O
the O
difference O
in O
the O
number O
of O
active O
sites O
. O


the O
oxidation B-SMT
of O
cobalt B-MAT
— I-MAT
tungsten I-MAT
alloys B-DSC


the O
oxidation B-PRO
behaviour I-PRO
of O
CoCrW B-MAT
alloys B-DSC
containing O
from O
<nUm> O
– O
<nUm> O
% O
Cr B-MAT
and O
up O
to O
<nUm> O
% O
W B-MAT
in O
oxygen O
at O
<nUm> O
– O
<nUm> O
° O
C O
has O
been O
studied O
. O


In O
CoW B-MAT
alloys B-DSC
there O
is O
a O
slight O
reduction O
in O
the O
oxidation B-PRO
rate I-PRO
as O
the O
tungsten B-MAT
content O
is O
increased O
, O
hwoever O
this O
is O
much O
mor O
emarked O
in O
Co15CrW B-MAT
alloys B-DSC
. O


tungsten B-MAT
has O
little O
effect O
in O
Co25CrW B-MAT
alloys B-DSC
. O


on O
the O
binary B-DSC
alloys I-DSC
and O
CoCrW B-MAT
alloys B-DSC
which O
do O
not O
form O
Cr2O3 B-MAT
, O
the O
scale O
has O
two O
layers B-DSC
: O
an O
outer O
, O
tungsten B-MAT
- O
free O
layer B-DSC
of O
columnar B-DSC
- I-DSC
grained I-DSC
CoO B-MAT
, O
and O
an O
inner O
layer B-DSC
of O
CoO B-MAT
containing O
CoO4W B-MAT
precipitates B-DSC
together O
with O
CoCr2O4 B-MAT
particles B-DSC
in O
the O
ternary O
alloys B-DSC
. O


the O
relative O
thicknesses O
of O
the O
two O
layers B-DSC
and O
the O
distribution O
of O
the O
constituents O
in O
the O
inner O
layer B-DSC
depends O
in O
temperature O
and O
alloy B-DSC
composition B-PRO
. O


the O
CoO4W B-MAT
and O
CoCr2O4 B-MAT
particles B-DSC
appear O
to O
be O
responsible O
for O
the O
reduction O
in O
oxidation B-PRO
rate I-PRO
by O
a O
blocking O
mechanism O
in O
the O
inner O
layer B-DSC
. O


there O
is O
some O
evidence O
to O
suggest O
that O
tungsten B-MAT
additions O
to O
co-25 B-MAT
% I-MAT
Cr I-MAT
alloys B-DSC
assist O
the O
exclusive O
formation O
of O
Cr2O3 B-MAT
. O


BFeO3 B-MAT
solid B-DSC
solutions I-DSC
: O
synthesis O
, O
crystal B-PRO
chemistry I-PRO
, O
and O
magnetic B-PRO
properties I-PRO


solid B-DSC
solutions I-DSC
of O
the O
type O
Fe1-xMxBO3 B-MAT
have O
been O
prepared O
where O
m O
= O
Mn B-MAT
, O
Cr B-MAT
, O
Al B-MAT
, O
Ga B-MAT
, O
or O
In B-MAT
. O


for O
m O
= O
In B-MAT
, O
Ga B-MAT
, O
or O
Cr B-MAT
, O
x O
can O
vary O
from O
<nUm> O
to O
<nUm> O
, O
but O
the O
solid B-DSC
solution I-DSC
range O
is O
more O
restricted O
for O
m O
= O
Al B-MAT
( O
O O
≤ O
x O
≤ O
<nUm> O
) O
and O
Mn B-MAT
( O
O O
≤ O
x O
≤ O
<nUm> O
) O
. O


the O
present O
investigation O
of O
these O
materials O
includes O
their O
crystal B-PRO
chemistry I-PRO
, O
thermal B-PRO
stability I-PRO
, O
and O
magnetic B-PRO
properties I-PRO
. O


the O
calcite B-SPL
- O
type O
unit B-PRO
- I-PRO
cell I-PRO
parameters I-PRO
follow O
closely O
vegard B-CMT
's I-CMT
law I-CMT
. O


DTA B-CMT
results O
indicate O
that O
the O
thermal B-PRO
stability I-PRO
increases O
with O
increasing O
m O
content O
for O
m O
= O
Cr B-MAT
, O
Al B-MAT
, O
or O
in. B-MAT
room O
- O
temperature O
magnetic B-CMT
measurements I-CMT
show O
that O
the O
Fe1-xMxBO3 B-MAT
phases O
remain O
canted B-PRO
antiferromagnets I-PRO
up O
to O
the O
<nUm> O
to O
<nUm> O
% O
substitution O
level O
, O
with O
monotonic O
decrease O
in O
the O
magnetization B-PRO
and O
curie B-PRO
temperature I-PRO
as O
a O
function O
of O
the O
concentration O
of O
m O
( O
dilution O
effect O
) O
. O


low O
- O
temperature O
magnetic B-CMT
studies I-CMT
of O
the O
systems O
Fe1-xCrxBO3 B-MAT
and O
Fe1-xInxBO3 B-MAT
show O
anomalous B-PRO
magnetic I-PRO
behavior I-PRO
at O
the O
higher O
Cr B-PRO
and I-PRO
In I-PRO
concentrations I-PRO
. O


electrical B-CMT
characterization I-CMT
of O
sputter B-SMT
- I-SMT
deposition I-SMT
- O
induced O
defects O
in O
epitaxially O
grown O
n-GaAs B-MAT
layers B-DSC


sputter B-SMT
deposition I-SMT
of O
metal O
schottky B-APL
contacts I-APL
on O
semiconductors B-PRO
creates O
damage O
at O
and O
below O
the O
surface B-DSC
, O
often O
resulting O
in O
inferior O
rectification B-PRO
properties I-PRO
. O


we O
have O
employed O
deep B-CMT
- I-CMT
level I-CMT
transient I-CMT
spectroscopy I-CMT
( O
DLTS B-CMT
) O
to O
characterize O
the O
defects O
introduced O
during O
sputter B-SMT
deposition I-SMT
of O
AI B-MAT
schottky B-APL
barrier I-APL
diodes I-APL
( O
SBDs B-APL
) O
on O
epitaxially O
grown O
n-GaAs B-MAT
with O
free B-PRO
carrier I-PRO
densities I-PRO
ranging O
from O
<nUm> O
× O
<nUm> O
to O
<nUm> O
× O
<nUm> O
cm-3 O
. O


six O
sputter B-SMT
- O
induced O
electron B-PRO
traps I-PRO
, O
es1 O
– O
es6 O
, O
were O
detected O
at O
energy O
levels O
of O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
eV O
, O
respectively O
, O
below O
the O
conduction B-PRO
band I-PRO
. O


the O
DLTS B-CMT
‘ O
signatures O
’ O
of O
es1 O
– O
es4 O
were O
the O
same O
as O
those O
of O
defects O
introduced O
by O
sub-threshold B-SMT
electron I-SMT
irradiation I-SMT
in O
the O
same O
AsGa B-MAT
. O


the O
es5 O
at O
ec O
- O
<nUm> O
eV O
could O
only O
be O
observed O
in O
Si B-MAT
- O
doped B-DSC
, O
but O
not O
in O
undoped B-DSC
AsGa B-MAT
, O
suggesting O
that O
it O
may O
be O
a O
complex O
involving O
Si B-MAT
. O


the O
concentrations O
of O
these O
defects O
decreased O
away O
from O
the O
interface B-DSC
to O
a O
depth O
that O
increased O
with O
decreasing O
AsGa B-MAT
free B-PRO
carrier I-PRO
density I-PRO
. O


CoMoO4 B-MAT
/ O
Fe2O3 B-MAT
core B-DSC
- I-DSC
shell I-DSC
nanorods I-DSC
with O
high O
lithium B-PRO
- I-PRO
storage I-PRO
performance I-PRO
as O
the O
anode B-APL
of O
lithium B-APL
- I-APL
ion I-APL
battery I-APL


CoMoO4 B-MAT
/ O
Fe2O3 B-MAT
core B-DSC
- I-DSC
shell I-DSC
nanorods I-DSC
are O
synthesized O
by O
a O
two B-SMT
- I-SMT
step I-SMT
hydrothermal I-SMT
method I-SMT
, O
and O
Fe2O3 B-MAT
nanoparticles B-DSC
as O
shell O
are O
uniformly O
distributed O
on O
the O
whole O
surface B-DSC
of O
CoMoO4 B-MAT
nanorods B-DSC
. O


the O
core B-DSC
- I-DSC
shell I-DSC
nanorods I-DSC
as O
the O
anode B-APL
of O
lithium B-APL
- I-APL
ion I-APL
battery I-APL
exhibit O
high O
reversible B-PRO
capacity I-PRO
of O
<nUm> O
mAh O
g-1 O
at O
<nUm> O
C O
rate O
( O
<nUm> O
h O
per O
half O
cycle O
) O
, O
which O
is O
higher O
than O
that O
of O
bare O
CoMoO4 B-MAT
nanorods B-DSC
. O


the O
discharge B-PRO
capacity I-PRO
can O
still O
maintain O
at O
<nUm> O
mAh O
g-1 O
( O
after O
<nUm> O
cycles O
) O
and O
<nUm> O
mAh O
g-1 O
( O
after O
<nUm> O
cycles O
) O
. O


the O
capacity B-PRO
retention I-PRO
between O
2nd O
and O
50th O
cycles O
is O
up O
to O
<nUm> O
% O
. O


the O
superior O
lithium B-PRO
- I-PRO
storage I-PRO
performance I-PRO
can O
be O
owned O
to O
the O
stable O
crystal B-PRO
structure I-PRO
, O
good O
electrical B-PRO
conductivity I-PRO
and O
complex O
synergistic O
effect O
between O
CoMoO4 B-MAT
and O
Fe2O3 B-MAT
. O


the O
present O
results O
indicate O
that O
CoMoO4 B-MAT
/ O
Fe2O3 B-MAT
core B-DSC
- I-DSC
shell I-DSC
nanorods I-DSC
are O
promising O
candidates O
for O
the O
anode B-APL
of O
lithium B-APL
- I-APL
ion I-APL
battery I-APL
. O


effect O
of O
thermal B-SMT
treatments I-SMT
on O
the O
martensitic B-PRO
transformation I-PRO
in O
co-containing B-DSC
Ni B-MAT
– I-MAT
Mn I-MAT
– I-MAT
Ga I-MAT
alloys B-DSC


the O
effect O
of O
the O
addition O
of O
Co B-MAT
to O
a O
Ni B-MAT
– I-MAT
Mn I-MAT
– I-MAT
Ga I-MAT
polycrystalline B-DSC
alloy I-DSC
has O
been O
analyzed O
through O
a O
comparative O
calorimetric B-CMT
study I-CMT
of O
the O
effect O
of O
thermal B-SMT
treatments I-SMT
on O
both O
co-free B-DSC
and O
co-containing B-DSC
alloys I-DSC
. O


the O
martensitic B-PRO
transformation I-PRO
( O
MT B-PRO
) O
and O
curie B-PRO
temperatures I-PRO
of O
the O
ternary O
alloy B-DSC
show O
an O
increase O
as O
a O
function O
of O
the O
heat B-SMT
treatment I-SMT
temperature O
, O
while O
in O
the O
cobalt B-MAT
- O
containing O
alloy B-DSC
, O
a O
decrease O
and O
a O
subsequent O
increase O
of O
the O
MT B-PRO
temperature I-PRO
take O
place O
. O


the O
behavior O
of O
the O
ternary O
alloy B-DSC
agrees O
with O
the O
occurrence O
of O
an O
ordering O
process O
, O
while O
in O
the O
quaternary O
alloy B-DSC
, O
a O
process O
of O
elimination O
of O
defects B-PRO
seems O
to O
occur O
at O
the O
same O
time O
, O
slightly O
affecting O
the O
evolution O
of O
the O
transformation B-PRO
temperatures I-PRO
. O


this O
indicates O
that O
the O
addition O
of O
cobalt B-MAT
, O
besides O
increasing O
the O
martensitic B-PRO
and O
magnetic B-PRO
transformation I-PRO
temperatures I-PRO
, O
increases O
the O
quench-in O
defects B-PRO
influence O
on O
these O
transformations O
. O


abnormal O
growth O
of O
LPCVD B-SMT
O2Si B-MAT
on O
CoSi2 B-MAT
by O
high O
dose O
As B-SMT
implantation I-SMT


we O
have O
investigated O
the O
effect O
of O
As O
dose O
on O
O2Si B-MAT
growth O
on O
CoSi2 B-MAT
films B-DSC
. O


As O
ions O
were O
implanted O
into O
Si B-MAT
- O
substrates B-DSC
with O
doses O
ranging O
from O
<nUm> O
× O
<nUm> O
to O
<nUm> O
× O
<nUm> O
cm-2 O
. O


after O
formation O
of O
CoSi2 B-MAT
, O
O2Si B-MAT
was O
deposited O
by O
low B-SMT
- I-SMT
pressure I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
( O
LPCVD B-SMT
) O
using O
tetraethyl O
orthosilicate O
. O


the O
growth O
rates O
of O
LPCVD B-SMT
O2Si B-MAT
on O
the O
CoSi2 B-MAT
films B-DSC
rapidly O
increased O
with O
arsenic O
doses O
above O
<nUm> O
× O
<nUm> O
cm-2 O
. O


arsenic O
, O
which O
is O
diffused O
into O
the O
CoSi2 B-MAT
films B-DSC
during O
the O
LPCVD B-SMT
O2Si B-MAT
deposition O
, O
is O
a O
major O
cause O
of O
abnormal O
oxide B-MAT
growth O
. O


thus O
, O
the O
arsenic O
doping O
level O
in O
Si B-MAT
has O
to O
be O
carefully O
controlled O
to O
prevent O
abnormal O
O2Si B-MAT
growth O
on O
CoSi2 B-MAT
films B-DSC
. O


flash B-SMT
sintering I-SMT
of O
ionic B-PRO
conductors I-PRO
: O
the O
need O
of O
a O
reversible O
electrochemical O
reaction O


flash B-SMT
sintering I-SMT
( O
FS B-SMT
) O
is O
a O
current B-SMT
- I-SMT
assisted I-SMT
sintering I-SMT
technique O
able O
to O
densify B-SMT
ceramics B-DSC
in O
short O
periods O
of O
time O
( O
just O
a O
few O
seconds O
) O
at O
temperatures O
significantly O
lower O
than O
in O
conventional O
sintering B-SMT
processes O
. O


FS B-SMT
technique O
was O
firstly O
reported O
for O
yttrium B-MAT
- O
stabilized B-DSC
zirconia B-MAT
and O
later O
it O
had O
been O
proved O
successful O
for O
a O
large O
range O
of O
oxide B-MAT
materials O
that O
present O
ionic B-PRO
conduction I-PRO
by O
oxygen B-PRO
vacancies I-PRO
. O


this O
paper O
describes O
the O
use O
of O
FS B-SMT
on O
a O
sodium B-PRO
ion I-PRO
conductor I-PRO
based O
on O
a O
model O
compound O
, O
the O
beta-alumina B-MAT
. O


different O
electrode B-APL
materials O
have O
been O
tested O
, O
i.e. O
, O
silver B-MAT
and O
platinum B-MAT
. O


the O
impact O
of O
the O
electrode B-APL
reaction O
on O
the O
current B-PRO
flow I-PRO
, O
and O
thus O
, O
on O
the O
sintering B-SMT
efficiency O
is O
shown O
for O
the O
first O
time O
. O


it O
appears O
that O
the O
densification B-SMT
by O
FS B-SMT
can O
only O
be O
possible O
if O
the O
current B-APL
collectors I-APL
, O
i.e. O
, O
the O
electrodes B-APL
, O
are O
specifically O
designed O
to O
enable O
reversible O
electrochemical O
reactions O
at O
the O
interfaces B-DSC
between O
the O
electrodes B-APL
and O
the O
ionic B-PRO
compound O
, O
insuring O
the O
current B-PRO
flow I-PRO
through O
the O
powder B-DSC
compact O
. O


crossed B-DSC
ferric B-MAT
oxide I-MAT
nanosheets B-DSC
supported O
cobalt B-MAT
oxide I-MAT
on O
3-dimensional B-DSC
macroporous I-DSC
Ni B-MAT
foam B-DSC
substrate I-DSC
used O
for O
diesel B-APL
soot I-APL
elimination I-APL
under O
self O
- O
capture O
contact O
mode O


crossed B-DSC
Fe2O3 B-MAT
nanosheets B-DSC
supported O
cobalt B-MAT
oxide I-MAT
nanoparticles B-DSC
on O
three B-DSC
- I-DSC
dimensionally I-DSC
macroporous I-DSC
nickel B-MAT
foam B-DSC
substrate I-DSC
( B-MAT
xCo I-MAT
/ I-MAT
Fe-NF I-MAT
) I-MAT
was O
designed O
and O
successfully O
prepared O
through O
a O
facile B-SMT
hydrothermal I-SMT
and I-SMT
impregnation I-SMT
route I-SMT
. O


these O
catalysts B-APL
showed O
high O
catalytic B-PRO
soot I-PRO
combustion I-PRO
activities I-PRO
under O
self O
- O
capture O
contact O
mode O
. O


the O
three B-DSC
- I-DSC
dimensional I-DSC
macroporous I-DSC
structures O
of O
Ni B-MAT
foam B-DSC
and O
the O
crossed B-DSC
Fe2O3 B-MAT
nanosheets B-DSC
constituted O
macroporous B-DSC
voids O
can O
greatly O
increase O
the O
contact B-PRO
efficiency I-PRO
between O
soot B-MAT
particulates B-DSC
and O
catalysts B-APL
. O


the O
interaction O
between O
Co B-MAT
and O
Fe B-MAT
facilitated O
the O
activation O
of O
the O
Fe B-MAT
– O
O O
bond O
and O
increased O
the O
amounts O
of O
active O
oxygen O
species O
, O
thus O
improving O
the O
redox B-PRO
property I-PRO
of O
the O
catalysts B-APL
. O


the O
0.6Co B-MAT
/ O
Fe-NF B-MAT
catalyst B-APL
exhibited O
the O
highest O
turnover B-PRO
frequency I-PRO
( O
TOF B-PRO
) O
for O
soot B-APL
combustion I-APL
, O
which O
is O
in O
good O
accordance O
with O
the O
largest O
amount O
of O
active O
oxygen O
species O
. O


based O
upon O
the O
catalytic B-PRO
performance I-PRO
and O
multiple O
characterization O
results O
, O
two O
reaction O
pathways O
for O
soot B-APL
oxidation I-APL
are O
identified O
, O
namely O
, O
the O
direct O
oxidation O
by O
the O
activated O
oxygen O
species O
via O
oxygen B-PRO
vacancies I-PRO
and O
the O
NOx O
- O
aided O
soot B-APL
oxidation I-APL
. O


characterization O
and O
room O
temperature O
sensing B-APL
of I-APL
ammonia I-APL
and I-APL
ethanol I-APL
by O
thermally B-SMT
oxidized I-SMT
indium B-MAT
films B-DSC


indium B-MAT
oxide I-MAT
( O
In2O3 B-MAT
) O
films B-DSC
have O
been O
prepared O
by O
thermal B-SMT
oxidation I-SMT
of O
vacuum B-SMT
deposited I-SMT
indium B-MAT
( O
In B-MAT
) O
films B-DSC
onto O
glass B-MAT
substrate B-DSC
kept O
at O
room O
temperature O
( O
<nUm> O
° O
C O
) O
. O


the O
structural B-PRO
, O
optical B-PRO
and O
gas B-PRO
sensing I-PRO
properties I-PRO
of O
films B-DSC
oxidized B-SMT
in O
air O
at O
<nUm> O
and O
<nUm> O
° O
C O
have O
been O
investigated O
. O


x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
measurements O
indicate O
that O
the O
In2O3 B-MAT
films B-DSC
oxidized B-SMT
at O
these O
temperatures O
exhibit O
a O
high O
degree O
of O
crystallographic B-PRO
orientation I-PRO
along O
( O
<nUm> O
) O
plane O
. O


field B-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
shows O
large O
and O
small O
grains O
scattered O
at O
the O
surface B-DSC
of O
In2O3 B-MAT
films B-DSC
. O


the O
optical B-CMT
and I-CMT
sensing I-CMT
studies I-CMT
show O
that O
In2O3 B-MAT
film B-DSC
oxidized B-SMT
at O
<nUm> O
° O
C O
exhibits O
comparatively O
higher O
optical B-PRO
band I-PRO
gap I-PRO
of O
<nUm> O
eV O
and O
large O
gas B-PRO
response I-PRO
of O
<nUm> O
% O
when O
exposed O
to O
<nUm> O
ppm O
of O
ammonia O
at O
room O
temperature O
. O


also O
an O
increase O
in O
optical B-PRO
absorbance I-PRO
towards O
ammonia O
for O
different O
concentrations O
at O
room O
temperature O
has O
been O
observed O
. O


properties O
of O
CdS B-MAT
nanoparticles B-DSC
dispersed O
zirconia B-MAT
films B-DSC


zirconia B-MAT
films B-DSC
incorporated O
with O
cadmium B-MAT
sulfide I-MAT
semiconductor B-PRO
nanoparticles B-DSC
were O
synthesized O
with O
the O
dip B-SMT
- I-SMT
coating I-SMT
technique O
in O
air O
. O


amorphous B-DSC
and O
transparent B-PRO
films B-DSC
were O
gained O
on O
the O
glass B-MAT
substrate B-DSC
. O


O2Zr B-MAT
: O
CdS B-MAT
films B-DSC
were O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
, O
atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
, O
optical B-CMT
absorption I-CMT
/ O
fluorescence B-CMT
spectra O
. O


the O
size O
control O
of O
CdS B-MAT
particles B-DSC
was O
studied O
. O


the O
different O
morphology B-PRO
of O
O2Zr B-MAT
and O
O2Zr B-MAT
: O
CdS B-MAT
films B-DSC
were O
observed O
. O


the O
blue O
shift O
of O
absorption B-PRO
band I-PRO
of O
CdS B-MAT
and O
its O
fluorescence B-PRO
properties I-PRO
are O
discussed O
. O


© O
<nUm> O
acta O
metallurgica O
inc. O
published O
by O
elsevier O
science O
ltd. O


all O
rights O
reserved O
. O


model O
for O
vickers B-PRO
microhardness I-PRO
prediction O
applied O
to O
O2Sn B-MAT
and O
O2Ti B-MAT
in O
the O
normal O
and O
high O
pressure O
phases O


the O
vickers B-PRO
microhardness I-PRO
of O
O2Ti B-MAT
is O
calculated O
using O
elastic B-PRO
properties I-PRO
obtained O
by O
first B-CMT
principles I-CMT
calculations I-CMT
combined O
with O
discrete B-CMT
elements I-CMT
method I-CMT
( O
DEM B-CMT
) O
. O


the O
calculation O
is O
carried O
out O
in O
rutile B-SPL
and O
cotunnite B-SPL
phases O
. O


it O
was O
found O
that O
rutile B-SPL
phase O
, O
has O
a O
microhardness B-PRO
of O
<nUm> O
GPa O
and O
<nUm> O
GPa O
for O
the O
failure B-PRO
and O
fracture B-PRO
modes I-PRO
in O
agreement O
with O
experimental O
results O
range O
. O


In O
cotunnite B-SPL
phase O
the O
hardness B-PRO
for I-PRO
failure I-PRO
and O
fracture B-PRO
mode I-PRO
are O
<nUm> O
and O
<nUm> O
GPa O
, O
close O
to O
<nUm> O
GPa O
, O
applying O
simunek B-CMT
model I-CMT
. O


to O
give O
insight O
to O
this O
methodology O
, O
the O
calculation B-SMT
is O
extended O
to O
O2Sn B-MAT
in O
the O
normal O
phase O
. O


the O
microhardness B-PRO
value O
obtained O
in O
the O
failure B-PRO
mode I-PRO
is O
<nUm> O
GPa O
. O


the O
method O
developed O
here O
, O
to O
obtain O
the O
vickers B-PRO
microhardness I-PRO
, O
could O
be O
applied O
to O
a O
systematic O
study O
of O
tailoring O
materials O
. O


since O
hardness B-PRO
is O
related O
to O
elastic B-PRO
shear I-PRO
properties I-PRO
, O
our O
results O
can O
be O
used O
as O
an O
assessment O
of O
the O
material O
properties O
as O
solid B-APL
lubricating I-APL
at O
first O
order O
. O


effects O
of O
seed B-DSC
layer I-DSC
on O
the O
coercivity B-PRO
and O
exchange B-PRO
bias I-PRO
in O
Co B-MAT
/ O
Ag B-MAT
/ O
CoO B-MAT
heterostructures B-DSC


magnetic B-PRO
multilayers B-DSC
of O
the O
form O
Co B-MAT
/ O
Ag B-MAT
/ O
CoO B-MAT
, O
grown O
on O
N4Si3 B-MAT
substrates B-DSC
, O
with O
seed B-DSC
layers I-DSC
of O
Ag B-MAT
or O
Ta B-MAT
of O
various O
thicknesses O
were O
studied O
. O


there O
is O
a O
dramatic O
difference O
between O
the O
exchange B-PRO
fields I-PRO
and O
between O
the O
coercive B-PRO
fields I-PRO
for O
the O
differing O
seed B-DSC
layers I-DSC
such O
that O
, O
for O
a O
Ag B-MAT
seed B-DSC
layer I-DSC
, O
the O
loop O
can O
be O
fully O
shifted O
to O
one O
side O
of O
zero O
field O
whereas O
, O
with O
a O
Ta B-MAT
seed B-DSC
layer I-DSC
, O
this O
behavior O
is O
not O
observed O
. O


one O
important O
difference O
in O
the O
seed B-DSC
layers I-DSC
is O
the O
layer B-PRO
roughness I-PRO
; O
the O
Ag B-MAT
seed B-DSC
layer I-DSC
is O
as O
much O
as O
six O
times O
rougher O
than O
the O
Ta B-MAT
layer B-DSC
, O
as O
determined O
by O
atomic B-CMT
force I-CMT
microscopy I-CMT
. O


realization O
of O
an O
atomic B-APL
sieve I-APL
: O
silica B-MAT
on O
Mo(112) B-MAT


the O
adsorption O
of O
Pd B-MAT
, O
Ag B-MAT
and O
Au B-MAT
atoms O
on O
a O
porous B-DSC
silica B-MAT
film B-DSC
on O
Mo(112) B-MAT
is O
investigated O
by O
scanning B-CMT
tunneling I-CMT
microscopy I-CMT
and O
density B-CMT
functional I-CMT
theory I-CMT
. O


while O
Pd B-MAT
atoms O
are O
able O
to O
penetrate O
the O
holes O
in O
the O
silica B-MAT
top B-DSC
- I-DSC
layer I-DSC
with O
virtually O
no O
barrier O
, O
Ag B-MAT
atoms O
experience O
an O
intermediate O
barrier O
value O
and O
Au B-MAT
atoms O
are O
completely O
unable O
to O
pass O
the O
oxide B-MAT
surface B-DSC
. O


the O
penetration B-PRO
probability I-PRO
does O
not O
correlate O
with O
the O
effective O
size O
of O
the O
atoms O
, O
but O
depends O
on O
their O
electronic B-PRO
structure I-PRO
. O


whereas O
Pd B-MAT
with O
an O
unoccupied O
valence O
s-orbital O
has O
a O
low O
penetration B-PRO
barrier I-PRO
, O
Ag B-MAT
and O
Au B-MAT
atoms O
with O
occupied O
s-states O
experience O
a O
substantial O
repulsion O
with O
the O
filled O
oxide B-MAT
states O
, O
leading O
to O
a O
higher O
barrier O
for O
penetration O
. O


In O
the O
case O
of O
Ag B-MAT
, O
the O
barrier B-PRO
height I-PRO
can O
be O
temporally O
lowered O
by O
promoting O
the O
Ag B-MAT
5s-electron O
into O
the O
support O
. O


the O
Mo B-MAT
- O
supported O
silica B-MAT
film B-DSC
can O
thus O
be O
considered O
as O
a O
primitive O
form O
of O
an O
atomic B-APL
sieve I-APL
whose O
selectivity O
is O
controlled O
by O
the O
electronic B-PRO
structure I-PRO
of O
the O
adatoms O
. O


effect O
of O
C B-PRO
/ I-PRO
Ti I-PRO
ratio I-PRO
on O
the O
laser B-SMT
ignited I-SMT
self I-SMT
- I-SMT
propagating I-SMT
high I-SMT
- I-SMT
temperature I-SMT
synthesis I-SMT
reaction I-SMT
of O
Al B-MAT
– I-MAT
Ti I-MAT
– I-MAT
C I-MAT
system O
for O
fabricating O
CTi B-MAT
/ O
Al B-MAT
composites B-DSC


CTi B-MAT
/ O
Al B-MAT
composite B-DSC
was O
successfully O
synthesized O
utilizing O
laser B-SMT
ignited I-SMT
self I-SMT
- I-SMT
propagating I-SMT
high I-SMT
- I-SMT
temperature I-SMT
synthesis I-SMT
( O
SHS B-SMT
) O
of O
Al B-MAT
– I-MAT
C I-MAT
– I-MAT
Ti I-MAT
system O
with O
the O
different O
C B-PRO
/ I-PRO
Ti I-PRO
molar I-PRO
ratio I-PRO
. O


when O
the O
molar O
ratio O
of O
C B-MAT
to O
Ti B-MAT
is O
below O
<nUm> O
: O
<nUm> O
in O
the O
starting O
materials O
, O
in O
addition O
to O
fine O
CTi B-MAT
particulates B-DSC
, O
a O
large O
amount O
of O
Al3Ti B-MAT
phase O
was O
found O
in O
the O
composites B-DSC
; O
however O
, O
when O
the O
molar O
ratio O
of O
C B-MAT
to O
Ti B-MAT
is O
<nUm> O
: O
<nUm> O
in O
the O
starting O
materials O
, O
the O
Al3Ti B-MAT
phase O
was O
almost O
completely O
eliminated O
and O
the O
distribution O
of O
CTi B-MAT
particulates B-DSC
generally O
appeared O
to O
be O
more O
homogeneous O
throughout O
the O
products O
synthesized O
. O


effects O
of O
pressure O
on O
the O
luminescence B-CMT
, O
raman B-CMT
and O
absorption B-CMT
spectra I-CMT
of O
248CmCl3 B-MAT


luminescence B-CMT
, O
absorption B-CMT
and O
phonon B-CMT
raman I-CMT
spectroscopy I-CMT
were O
used O
to O
study O
Cl3Cm B-MAT
under O
pressure O
in O
a O
diamond B-MAT
anvil B-APL
cell I-APL
. O


transformation O
from O
the O
initial O
hexagonal B-SPL
structure O
to O
an O
orthorhombic B-SPL
one O
was O
observed O
. O


the O
results O
also O
suggest O
the O
existence O
of O
a O
potentially O
new O
, O
as O
yet O
unidentified O
, O
higher O
pressure O
phase O
. O


the O
present O
experimental O
results O
are O
compared O
with O
those O
from O
previous O
studies O
on O
CfCl3 B-MAT
, O
Cl3Pr B-MAT
, O
Br3Pr B-MAT
and O
Br3Nd B-MAT
under O
pressure O
. O


changes O
in O
coordination B-PRO
number I-PRO
are O
used O
to O
explain O
the O
observed O
phase O
changes O
and O
to O
speculate O
on O
potential O
structures O
of O
the O
“ O
new O
” O
higher O
pressure O
phase O
. O


substrate B-DSC
effect O
on O
texture B-PRO
properties I-PRO
of O
nanocrystalline B-DSC
O2Ti B-MAT
thin B-DSC
films I-DSC


titanium B-MAT
oxide I-MAT
( O
O2Ti B-MAT
) O
nanocrystalline B-DSC
thin I-DSC
films I-DSC
have O
been O
grown O
on O
different O
substrates B-DSC
AlLaO3 B-MAT
( O
<nUm> O
) O
and O
a-Al2O3 B-MAT
( O
<nUm> O
) O
by O
dc B-SMT
magnetron I-SMT
sputtering I-SMT
in O
an O
Ar+O2 O
gas O
mixture O
. O


pure O
rutile B-SPL
or O
anatase B-SPL
or O
mixed O
( O
rutile B-SPL
and O
anatase B-SPL
) O
phase O
of O
O2Ti B-MAT
can O
be O
grown O
at O
fixed O
sputtering B-SMT
pressure O
and O
substrate B-DSC
temperature O
on O
various O
substrates B-DSC
. O


XRD B-CMT
and O
TEM B-CMT
studies O
of O
the O
films B-DSC
deposited O
at O
fixed O
pressure O
of O
<nUm> O
× O
10-2Torr O
and O
substrate B-DSC
temperature O
of O
<nUm> O
° O
C O
revealed O
that O
preferred O
( O
<nUm> O
) O
oriented O
anatase B-SPL
phase O
was O
observed O
in O
case O
of O
films B-DSC
grown O
over O
AlLaO3 B-MAT
substrates B-DSC
and O
rutile B-SPL
phase O
with O
preferred O
( O
<nUm> O
) O
orientation O
was O
observed O
in O
case O
of O
films B-DSC
deposited O
over O
the O
sapphire B-MAT
substrate B-DSC
. O


the O
results O
indicate O
that O
the O
film B-DSC
growth O
direction O
is O
highly O
affected O
with O
nature O
of O
substrate B-DSC
and O
substrate B-DSC
orientation O
. O


further O
, O
AFM B-CMT
and O
FESEM B-CMT
images O
showed O
that O
nanostructured B-DSC
O2Ti B-MAT
films B-DSC
could O
be O
grown O
on O
all O
substrates B-DSC
. O


low O
temperature O
growth O
of O
nanocrystalline B-DSC
O2Ti B-MAT
films B-DSC
with O
Ar B-SMT
/ I-SMT
O I-SMT
low I-SMT
- I-SMT
field I-SMT
helicon I-SMT
plasma I-SMT


O2Ti B-MAT
thin B-DSC
films I-DSC
were O
deposited O
on O
silicon B-MAT
wafer B-DSC
substrates I-DSC
by O
low B-SMT
- I-SMT
field I-SMT
( I-SMT
<nUm> I-SMT
< I-SMT
B I-SMT
< I-SMT
5mT I-SMT
) I-SMT
helicon I-SMT
plasma I-SMT
assisted I-SMT
reactive I-SMT
sputtering I-SMT
in O
a O
mixture O
of O
pure O
argon O
and O
oxygen O
. O


the O
influence O
of O
the O
positive O
ion O
density O
on O
the O
substrate B-DSC
and O
the O
post-annealing B-SMT
treatment O
on O
the O
films B-DSC
density B-PRO
, O
refractive B-PRO
index I-PRO
, O
chemical B-PRO
composition I-PRO
and O
crystalline B-PRO
structure I-PRO
was O
analysed O
by O
reflectometry B-CMT
, O
rutherford B-CMT
backscattering I-CMT
spectroscopy I-CMT
( O
RBS B-CMT
) O
and O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
. O


amorphous B-DSC
O2Ti B-MAT
was O
obtained O
for O
ion O
density O
on O
the O
substrate B-DSC
below O
<nUm> O
× O
1016m-3 O
. O


increasing O
the O
ion O
density O
over O
<nUm> O
× O
1016m-3 O
led O
to O
the O
formation O
of O
nanocrystalline B-DSC
( O
~ O
<nUm> O
nm O
) O
rutile B-SPL
phase O
O2Ti B-MAT
. O


the O
post-annealing B-SMT
treatment O
of O
the O
films B-DSC
in O
air O
at O
<nUm> O
° O
C O
induced O
the O
complete O
crystallisation O
of O
the O
amorphous B-DSC
films I-DSC
to O
nanocrystals B-DSC
of O
anatase B-SPL
( O
~ O
<nUm> O
nm O
) O
while O
the O
rutile B-SPL
films B-DSC
shows O
no O
significant O
change O
meaning O
that O
they O
were O
already O
fully O
crystallised O
by O
the O
plasma B-SMT
process I-SMT
. O


all O
these O
results O
show O
an O
efficient O
process O
by O
low B-SMT
- I-SMT
field I-SMT
helicon I-SMT
plasma I-SMT
sputtering I-SMT
process O
to O
fabricate O
stoichiometric B-DSC
O2Ti B-MAT
thin B-DSC
films I-DSC
with O
amorphous B-DSC
or O
nanocrystalline B-DSC
rutile B-SPL
structure O
directly O
from O
low O
temperature O
plasma B-SMT
processing I-SMT
conditions O
and O
nanocrystalline B-DSC
anatase B-SPL
structure O
with O
a O
moderate O
annealing B-SMT
treatment O
. O


oxygen B-PRO
vacancy I-PRO
related I-PRO
defect I-PRO
dipoles I-PRO
in O
CaCu3O12Ti4 B-MAT
: O
detected O
by O
electron B-CMT
paramagnetic I-CMT
resonance I-CMT
spectroscopy I-CMT


oxygen B-PRO
vacancy I-PRO
associate O
defects B-PRO
were O
studied O
by O
electron B-CMT
paramagnetic I-CMT
resonance I-CMT
( O
EPR B-CMT
) O
for O
the O
perovskite B-SPL
oxide O
CaCu3O12Ti4 B-MAT
( O
CCTO B-MAT
) O
, O
which O
have O
a O
colossal O
dielectric B-PRO
constant I-PRO
. O


it O
is O
found O
that O
the O
EPR B-SMT
line O
width O
of O
the O
cu2+ O
– O
host O
signal O
of O
CCTO B-MAT
correlates O
with O
its O
permittivity B-PRO
. O


A O
new O
signal O
was O
found O
in O
the O
second O
differential O
of O
the O
cu2+ O
– O
host O
signal O
, O
which O
we O
think O
is O
associated O
with O
a O
specific O
copper B-MAT
– O
oxygen B-PRO
vacancy I-PRO
defect I-PRO
. O


this O
signal O
shows O
a O
negative O
g B-PRO
factor I-PRO
shift O
with O
temperature O
, O
suggesting O
a O
contribution O
to O
the O
conduction B-PRO
. O


assuming O
solid O
state O
reactions O
between O
the O
various O
defects B-PRO
and O
using O
the O
mass B-CMT
action I-CMT
law I-CMT
, O
we O
offer O
a O
more O
specific O
relation O
between O
permittivity B-PRO
, O
the O
content O
of O
oxygen B-PRO
vacancy I-PRO
and O
the O
new O
signal O
, O
which O
might O
be O
useful O
for O
an O
indirect O
but O
fast O
oxygen B-PRO
vacancy I-PRO
content O
determination O
. O


the O
temperature O
dependence O
of O
the O
gruneisen B-PRO
parameters I-PRO
of O
MgN2Si B-MAT
, O
AlN B-MAT
and O
b-Si3N4 B-MAT


the O
temperature O
dependence O
of O
the O
gruneisen B-PRO
parameter I-PRO
of O
MgN2Si B-MAT
( O
<nUm> O
– O
1600K O
) O
, O
AlN B-MAT
( O
<nUm> O
– O
1600K O
) O
, O
and O
b-Si3N4 B-MAT
( O
<nUm> O
– O
1300K O
) O
was O
evaluated O
from O
thermal B-PRO
expansion I-PRO
, O
elastic B-PRO
constants I-PRO
and O
heat B-PRO
capacity I-PRO
data O
of O
these O
materials O
. O


for O
all O
compounds O
the O
gruneisen B-PRO
parameter I-PRO
increases O
as O
a O
function O
of O
the O
reduced O
temperature O
approaching O
a O
constant O
value O
at O
high O
temperatures O
( O
T O
/ O
θ O
≥ O
<nUm> O
) O
. O


the O
high O
temperature O
limit O
of O
the O
gruneisen B-PRO
parameter I-PRO
of O
the O
wurtzite B-SPL
type O
materials O
MgN2Si B-MAT
and O
AlN B-MAT
is O
about O
the O
same O
( O
<nUm> O
and O
<nUm> O
, O
respectively O
) O
whereas O
these O
are O
much O
higher O
than O
that O
of O
the O
phenacite B-SPL
b-Si3N4 B-MAT
( O
<nUm> O
) O
. O


this O
behaviour O
can O
be O
understood O
quantitatively O
from O
the O
relation O
between O
the O
gruneisen B-PRO
parameter I-PRO
and O
the O
bond B-PRO
parameter I-PRO
W I-PRO
as O
established O
by O
slack O
. O


the O
electronic B-PRO
properties I-PRO
of O
graphene B-MAT
and O
its O
bilayer B-DSC


we O
present O
a O
discussion O
of O
some O
of O
the O
physical B-PRO
properties I-PRO
of O
graphene B-MAT
and O
its O
bilayer B-DSC
. O


In O
particular O
, O
we O
focus O
our O
attention O
on O
the O
calculation O
of O
the O
transparency B-PRO
of O
graphene B-MAT
and O
on O
the O
dependence O
of O
the O
energy B-PRO
gap I-PRO
of O
the O
biased O
graphene B-MAT
bilayer B-DSC
on O
the O
electronic B-PRO
density I-PRO
. O


we O
show O
that O
the O
transparency B-PRO
of O
graphene B-MAT
is O
controlled O
by O
the O
value O
of O
the O
fine B-PRO
structure I-PRO
constant I-PRO
over O
a O
frequency O
range O
from O
the O
infra-red O
to O
the O
ultra-violet O
. O


we O
derive O
the O
dependence O
of O
the O
energy B-PRO
gap I-PRO
of O
the O
graphene B-MAT
bilayer B-DSC
on O
the O
external O
applied O
electric O
field O
. O


sintering B-SMT
and O
HIPping B-SMT
of O
silicon B-MAT
nitride I-MAT
- O
silicon B-MAT
carbide I-MAT
composite B-DSC
materials O


N4Si3 B-MAT
composite B-DSC
materials O
containing O
up O
to O
<nUm> O
vol. O
% O
of O
dispersed O
b-SiC B-MAT
particles B-DSC
were O
sintered B-SMT
with O
O3Y2 B-MAT
and O
Al2O3 B-MAT
at O
<nUm> O
° O
C O
and O
0*1 O
MPa O
N O
. O


fractional B-PRO
density I-PRO
decreased O
from O
0*97 O
to O
0*91 O
when O
the O
CSi B-MAT
content O
increased O
from O
<nUm> O
to O
<nUm> O
vol. O
% O
. O


simultaneously O
a O
retardation O
of O
grain O
growth O
and O
reduced O
pore B-PRO
size I-PRO
was O
found O
. O


subsequent O
HIPping B-SMT
at O
<nUm> O
° O
C O
with O
N O
- O
pressure O
of O
<nUm> O
MPa O
resulted O
in O
almost O
complete O
elimination O
of O
presintered B-SMT
closed O
pores O
and O
a O
final O
density B-PRO
of O
0*99 O
up O
to O
<nUm> O
vol. O
% O
of O
CSi B-MAT
. O


during O
HIPping B-SMT
N4Si3 B-MAT
is O
formed O
by O
reaction O
of O
CSi B-MAT
or O
C B-MAT
with O
the O
O2Si B-MAT
intergranular B-DSC
glass I-DSC
in O
the O
presence O
of O
high O
N O
- O
pressure O
. O


while O
fracture B-PRO
toughness I-PRO
shows O
no O
significant O
influence O
of O
CSi B-MAT
content O
, O
a O
reduction O
of O
critical B-PRO
defect I-PRO
size I-PRO
with O
increasing O
CSi B-MAT
content O
results O
in O
a O
distinct O
increase O
of O
fracture B-PRO
strength I-PRO
particularly O
after O
HIPping B-SMT
. O


stabilizing O
gold B-MAT
clusters B-DSC
by O
heterostructured B-DSC
transition B-MAT
- I-MAT
metal I-MAT
oxide I-MAT
– O
mesoporous B-DSC
silica B-MAT
supports O
for O
enhanced O
catalytic B-PRO
activities I-PRO
for O
CO B-APL
oxidation I-APL


A O
strategy O
for O
stabilizing O
ultrasmall O
gold B-MAT
clusters B-DSC
under O
thermal B-SMT
treatment I-SMT
has O
been O
developed O
. O


the O
essence O
of O
this O
methodology O
lies O
in O
construction O
of O
heterostructured B-DSC
transition B-MAT
- I-MAT
metal I-MAT
oxide I-MAT
– O
mesoporous B-DSC
silica B-MAT
supports O
. O


the O
supported O
clusters B-DSC
have O
been O
demonstrated O
to O
be O
sintering B-PRO
resistant I-PRO
and O
highly O
active O
for O
catalytic B-APL
CO I-APL
oxidation I-APL
. O


the O
in O
situ O
preparation O
of O
novel O
a-Fe2O3 B-MAT
nanorods B-DSC
/ O
CNTs B-MAT
composites B-DSC
and O
their O
greatly O
enhanced O
field B-PRO
emission I-PRO
properties I-PRO


novel O
field B-APL
emitters I-APL
with O
a-Fe2O3 B-MAT
nanorods B-DSC
/ O
CNTs B-MAT
composites B-DSC
were O
simply O
prepared O
by O
dipping O
the O
iron B-MAT
into O
the O
oxalic O
acid O
solution O
, O
drop B-SMT
- I-SMT
coating I-SMT
CNTs B-MAT
to O
the O
iron B-MAT
substrate B-DSC
followed O
by O
in O
situ O
thermal B-SMT
oxidation I-SMT
. O


the O
surface B-PRO
morphology I-PRO
of O
the O
products O
has O
been O
characterized O
by O
scanning B-CMT
electron I-CMT
microscope I-CMT
( O
SEM B-CMT
) O
. O


and O
further O
the O
composition B-PRO
was O
analyzed O
by O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
and O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
. O


the O
results O
of O
SEM B-CMT
, O
XRD B-CMT
and O
XPS B-CMT
showed O
that O
CNTs B-MAT
have O
been O
homogenously O
dispersed O
and O
partly O
wrapped O
on O
a-Fe2O3 B-MAT
nanorods B-DSC
. O


a-Fe2O3 B-MAT
nanorods B-DSC
/ O
CNTs B-MAT
composites B-DSC
had O
exhibited O
greatly O
enhanced O
field B-PRO
emission I-PRO
properties I-PRO
with O
low O
turn-on B-PRO
field I-PRO
( O
about O
<nUm> O
V O
/ O
mm O
) O
, O
and O
high O
field B-PRO
enhancement I-PRO
factor I-PRO
of O
<nUm> O
. O


therefore O
, O
the O
a-Fe2O3 B-MAT
nanorods B-DSC
/ O
CNTs B-MAT
composites B-DSC
are O
promising O
field B-APL
emitters I-APL
for O
field B-APL
emission I-APL
applications I-APL
. O


magnetic B-PRO
short I-PRO
- I-PRO
range I-PRO
order I-PRO
in O
the O
linear B-PRO
- I-PRO
chain I-PRO
antiferromagnet I-PRO
Cl3CsMn B-MAT
· I-MAT
2H2O I-MAT
studied O
by O
optical B-CMT
birefringence I-CMT


the O
linear O
optical B-PRO
birefringence I-PRO
of O
Cl3CsMn B-MAT
· I-MAT
2H2O I-MAT
shows O
a O
magnetic B-PRO
contribution I-PRO
due O
to O
one B-PRO
- I-PRO
dimensional I-PRO
short I-PRO
- I-PRO
range I-PRO
order I-PRO
. O


the O
temperature O
derivative O
of O
this O
part O
is O
proportional O
to O
the O
magnetic B-PRO
specific I-PRO
heat I-PRO
. O


for O
the O
intrachain B-PRO
interaction I-PRO
we O
find O
|J| B-PRO
/ I-PRO
k I-PRO
= O
<nUm> O
± O
<nUm> O
K O
. O


around O
the O
neel B-PRO
temperature I-PRO
the O
interchain B-PRO
coupling I-PRO
causes O
a O
small O
birefringence B-PRO
change O
with O
the O
opposite O
sign O
. O


preparation O
of O
1-D B-DSC
/ O
3-D B-DSC
structured O
AgNWs B-MAT
/ O
Bi2Te3 B-MAT
nanocomposites B-DSC
with O
enhanced O
thermoelectric B-PRO
properties I-PRO


A O
novel O
and O
facile O
approach O
is O
demonstrated O
to O
dramatically O
enhance O
thermoelectric B-PRO
properties I-PRO
by O
means O
of O
introducing O
one B-DSC
- I-DSC
dimensional I-DSC
( O
1-D B-DSC
) O
silver B-MAT
nanowires B-DSC
( O
AgNWs B-MAT
) O
into O
a O
three B-DSC
- I-DSC
dimensional I-DSC
( O
3-D B-DSC
) O
Bi2Te3 B-MAT
matrix O
in O
order O
to O
construct O
1-D B-DSC
/ O
3-D B-DSC
structured O
nanocomposites B-DSC
. O


the O
influence O
of O
different O
concentrations O
of O
AgNWs B-MAT
on O
the O
morphology B-PRO
and O
thermoelectric B-PRO
properties I-PRO
of O
Bi2Te3 B-MAT
is O
investigated O
in O
detail O
. O


the O
results O
show O
that O
the O
dispersed O
AgNWs B-MAT
effectively O
suppress O
grain O
growth O
and O
form O
new O
interfaces B-DSC
with O
the O
Bi2Te3 B-MAT
matrix O
. O


In O
contrast O
to O
pure B-DSC
bulk I-DSC
Bi2Te3 B-MAT
, O
almost O
all O
bulk B-DSC
samples O
dispersed O
with O
AgNWs B-MAT
exhibit O
the O
much O
lower O
thermal B-PRO
conductivity I-PRO
and O
higher O
power B-PRO
factors I-PRO
. O


consequently O
, O
the O
maximum O
ZT B-PRO
of O
the O
AgNW B-MAT
- O
dispersed O
Bi2Te3 B-MAT
nanocomposites B-DSC
is O
amazingly O
found O
to O
be O
<nUm> O
% O
higher O
than O
that O
of O
the O
pure O
Bi2Te3 B-MAT
. O


these O
results O
demonstrated O
that O
the O
dispersion O
of O
AgNWs B-MAT
could O
form O
new O
interfaces B-DSC
with O
the O
matrix O
and O
introduce O
defects B-PRO
to O
cause O
strong O
scattering O
of O
long B-PRO
- I-PRO
wavelength I-PRO
phonons I-PRO
, O
and O
therefore O
significantly O
reduce O
the O
lattice B-PRO
thermal I-PRO
conductivity I-PRO
. O


our O
study O
confirms O
that O
introducing O
1-D B-DSC
nanodispersoids I-DSC
into O
a O
3-D B-DSC
thermoelectric B-PRO
matrix O
is O
promising O
approach O
to O
improving O
ZT B-PRO
values O
significantly O
. O


temperature O
and O
time B-PRO
stability I-PRO
of O
MnZn B-MAT
ferrites I-MAT


the O
commercially O
important O
parameters O
of O
a O
MnZn B-MAT
ferrite I-MAT
have O
been O
measured O
as O
a O
function O
of O
post O
sinter B-SPL
cooling B-SMT
rate O
. O


the O
disaccommodation B-PRO
factor I-PRO
( O
DF B-PRO
) O
has O
been O
found O
to O
vary O
markedly O
with O
cooling B-SPL
rate O
, O
whilst O
other O
parameters O
vary O
to O
a O
much O
smaller O
extent O
. O


the O
change O
in O
DF B-PRO
has O
been O
associated O
with O
surface B-PRO
volatilisation I-PRO
of O
zinc B-MAT
. O


A O
facile O
strategy O
to O
fabricate O
large O
- O
scale O
uniform O
brookite B-SPL
O2Ti B-MAT
nanospindles B-DSC
with O
high O
thermal B-PRO
stability I-PRO
and O
superior O
electrical B-PRO
properties I-PRO


A O
facile O
strategy O
was O
initiated O
to O
fabricate O
large O
- O
scale O
uniform O
brookite B-SPL
O2Ti B-MAT
nanospindles B-DSC
preferentially O
grown O
along O
the O
[001] O
direction O
, O
which O
were O
highly O
thermally B-PRO
stable I-PRO
and O
exhibited O
superior O
electrical B-PRO
conductivity I-PRO
, O
about O
two O
orders O
of O
magnitude O
higher O
than O
those O
of O
anatase B-SPL
and O
rutile B-SPL
counterparts O
. O


superconducting B-PRO
thin B-DSC
films I-DSC
of O
BaCuOY B-MAT
compound O
deposited O
on O
silicon B-MAT
and O
Al2O3 B-MAT
substrates B-DSC


BaCuY B-MAT
oxides I-MAT
have O
been O
deposited O
on O
Si B-MAT
and O
sapphire B-MAT
substrates B-DSC
using O
various O
sputtering B-SMT
methods O
. O


resistivity B-PRO
measurements O
during O
post-deposition B-SMT
thermal I-SMT
annealing I-SMT
under O
O O
exhibit O
two O
distinct O
transitions O
near O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
. O


transport B-PRO
and O
magnetic B-PRO
properties I-PRO
are O
reported O
. O


XPS B-CMT
core O
levels O
and O
auger B-CMT
spectra O
demonstrate O
the O
influence O
of O
oxidation B-SMT
and O
air O
exposure O
on O
the O
surface B-DSC
layers I-DSC
, O
and O
distinctions O
between O
superconducting B-PRO
and O
non-superconducting B-PRO
films B-DSC
are O
presented O
. O


the O
interface B-DSC
between O
high-Tc B-PRO
film B-DSC
and O
Si B-MAT
substrate B-DSC
is O
studied O
using O
STEM B-CMT
: O
diffusion O
of O
various O
species O
is O
revealed O
. O


ion B-SMT
- I-SMT
plated I-SMT
aluminium B-MAT
bronze I-MAT
coatings B-APL
for O
sheet B-APL
metal I-APL
forming I-APL
dies I-APL


aluminium B-MAT
bronze I-MAT
coatings B-APL
on O
steel B-MAT
were O
deposited O
by O
the O
ion B-SMT
plating I-SMT
process I-SMT
using O
a O
slug B-SMT
- I-SMT
fed I-SMT
resistively I-SMT
heated I-SMT
evaporator I-SMT
. O


the O
coating B-APL
material O
was O
Cu14Al4.5Fe1Ni B-MAT
alloy B-DSC
which O
is O
known O
to O
have O
good O
non-galling B-PRO
properties I-PRO
in O
sheet B-APL
metal I-APL
forming I-APL
. O


the O
structures B-PRO
of O
the O
coatings B-APL
deposited O
at O
various O
evaporation O
rates O
were O
studied O
by O
scanning B-CMT
electron I-CMT
microscopy I-CMT
, O
chemical B-CMT
microanalysis I-CMT
and O
x-ray B-CMT
diffraction I-CMT
. O


the O
composition B-PRO
of O
the O
coatings B-APL
varied O
in O
a O
regular O
manner O
through O
the O
thickness O
and O
the O
grain B-PRO
size I-PRO
was O
small O
. O


synthesis O
, O
crystal B-PRO
structure I-PRO
, O
and O
magnetic B-PRO
order I-PRO
of O
the O
layered B-DSC
iron B-MAT
oxycarbonate I-MAT
CFe2O9Sr4 I-MAT


the O
iron B-MAT
oxycarbonate I-MAT
CFe2O9Sr4 I-MAT
is O
reported O
. O


the O
crystal B-PRO
structure I-PRO
and O
magnetic B-PRO
order I-PRO
were O
determined O
by O
magnetic B-CMT
susceptibility I-CMT
, O
powder B-CMT
neutron I-CMT
diffraction I-CMT
, O
and O
neutron B-CMT
scattering I-CMT
studies O
. O


the O
structure O
is O
tetragonal B-SPL
between O
<nUm> O
and O
<nUm> O
K O
( O
I4 B-SPL
/ I-SPL
mmm I-SPL
, O
a B-PRO
= O
<nUm> O
Å O
and O
c B-PRO
= O
<nUm> O
Å O
at O
<nUm> O
K O
) O
, O
and O
is O
related O
to O
a O
<nUm> O
: O
<nUm> O
type O
ruddlesden B-SPL
– I-SPL
popper I-SPL
phase O
with O
CO3 B-MAT
plaques B-DSC
in O
place O
of O
the O
middle O
layer O
of O
transition O
metal O
octahedra O
. O


the O
three O
- O
dimensional O
magnetic B-PRO
ordering I-PRO
transition I-PRO
temperature I-PRO
is O
<nUm> O
K O
. O


the O
magnetic B-PRO
order I-PRO
is O
antiferromagnetic B-PRO
within O
the O
FeO2 B-MAT
/ O
OSr B-MAT
/ O
OSr B-MAT
/ O
FeO2 B-MAT
blocks O
and O
ferromagnetic B-PRO
between O
blocks O
. O


temperature O
and O
pressure O
dependent O
electrical B-PRO
property I-PRO
of O
Fe2O3 B-MAT
nanorod B-DSC


Fe2O3 B-MAT
nanorods B-DSC
were O
synthesized O
in O
large O
scale O
by O
a O
typical O
surfactant B-SMT
- I-SMT
free I-SMT
hydrothermal I-SMT
method I-SMT
. O


the O
electrical B-PRO
property I-PRO
of O
a O
single B-DSC
nanorod I-DSC
was O
investigated O
between O
two O
gold B-MAT
nanoelectrodes B-APL
. O


nonlinear O
I B-CMT
– I-CMT
V I-CMT
curves I-CMT
were O
got O
under O
different O
temperatures O
and O
pressures O
respectively O
as O
the O
bias O
ranged O
from O
– O
3V O
to O
3V O
. O


such O
a O
nonlinear O
electrical B-PRO
behavior I-PRO
was O
attributed O
to O
the O
existence O
of O
barriers O
. O


and O
the O
barrier B-PRO
height I-PRO
was O
estimated O
to O
be O
0.13eV O
by O
linear B-CMT
fitting I-CMT
ln(I I-CMT
/ I-CMT
T2 I-CMT
) I-CMT
and I-CMT
( I-CMT
− I-CMT
<nUm> I-CMT
/ I-CMT
kT I-CMT
) I-CMT
. O


the O
effect O
of O
oxygen O
pressure O
to O
the O
conductance B-PRO
is O
due O
to O
the O
conversion O
from O
depletion O
layer O
to O
inversion O
layer O
caused O
by O
the O
oxygen-controlled O
surface B-PRO
potential I-PRO
as O
well O
as O
the O
small O
size O
of O
the O
nanorods B-DSC
. O


microstructure B-PRO
effect O
on O
magnetization B-PRO
and O
domain B-PRO
structure I-PRO
in O
Co2Fe190Ni49O100Zn49 B-MAT
x I-MAT
ferrite I-MAT


the O
effect O
that O
grain B-PRO
size I-PRO
has O
on O
magnetization B-PRO
in O
cobalt B-MAT
substituted B-DSC
NiZn B-MAT
polycrystalline B-DSC
bulk I-DSC
ferrite B-MAT
has O
been O
studied O
and O
the O
magnetic B-PRO
domain I-PRO
has O
been O
visualized O
by O
taking O
measurements O
with O
a O
photoemission B-CMT
electron I-CMT
microscope I-CMT
( O
PEEM B-CMT
) O
. O


complex O
permeability B-PRO
shows O
that O
magnetization B-PRO
with O
a O
grain B-PRO
size I-PRO
smaller O
than O
~ O
<nUm> O
mm O
is O
dominated O
only O
by O
the O
spin B-PRO
rotation I-PRO
and O
the O
magnetic B-PRO
domain I-PRO
wall I-PRO
motion I-PRO
contributes O
when O
the O
grain B-PRO
size I-PRO
is O
larger O
. O


PEEM B-CMT
measurements O
show O
that O
the O
small O
grain O
induces O
the O
small O
magnetic B-PRO
domain I-PRO
and O
it O
becomes O
larger O
when O
the O
grain O
is O
large O
, O
which O
is O
a O
result O
that O
agrees O
with O
the O
magnetization B-PRO
process O
. O


At O
the O
same O
time O
, O
the O
presence O
of O
a O
domain B-PRO
wall I-PRO
across O
the O
grain B-PRO
boundary I-PRO
has O
been O
confirmed O
regardless O
of O
the O
grain B-PRO
size I-PRO
. O


this O
suggests O
the O
possibility O
of O
there O
being O
a O
magnetic B-PRO
coupling I-PRO
between O
the O
grains O
related O
to O
the O
effect O
that O
the O
microstructure B-PRO
has O
on O
magnetic B-PRO
domain I-PRO
structure I-PRO
and O
magnetization B-PRO
in O
cobalt B-MAT
substituted B-DSC
NiZn B-MAT
ferrite I-MAT
. O


Cu B-MAT
diffusion O
into O
Ag B-MAT
during O
BSCCO B-MAT
tape B-DSC
processing O


diffusion B-CMT
studies I-CMT
of O
(Bi,Pb)2Sr2Ca2Cu3O10 B-MAT
and O
Bi2CaCu2O8Sr2 B-MAT
tapes B-DSC
wrapped O
in O
Ag B-MAT
show O
that O
Cu B-MAT
of O
the O
ceramic B-DSC
diffuses O
into O
the O
Ag B-MAT
sheath O
during O
annealing B-SMT
that O
results O
in O
a O
decrease O
of O
the O
Cu B-PRO
content I-PRO
of O
the O
ceramic B-DSC
. O


the O
diffusion B-PRO
coefficient I-PRO
has O
been O
determined O
to O
range O
between O
about O
<nUm> O
× O
<nUm> O
− O
<nUm> O
and O
<nUm> O
× O
<nUm> O
− O
<nUm> O
cm2s-1 O
at O
temperatures O
between O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
. O


A O
diffusion O
of O
Bi B-MAT
, O
Pb B-MAT
, O
Sr B-MAT
, O
and O
Ca B-MAT
into O
Ag B-MAT
has O
not O
been O
observed O
. O


effects O
of O
acoustic O
waves O
generated O
on O
a O
positively O
polarized O
lead B-MAT
strontium I-MAT
zirconium I-MAT
titanate I-MAT
substrate B-DSC
upon O
catalytic B-PRO
activity I-PRO
of O
a O
deposited O
Ag B-MAT
thin B-DSC
film I-DSC


A O
positively O
polarized O
lead B-MAT
strontium I-MAT
zirconium I-MAT
titanate I-MAT
( O
PSZT B-MAT
) O
substrate B-DSC
was O
employed O
for O
the O
generation O
of O
thickness O
- O
extensional O
mode O
resonance O
oscillation O
( O
TERO O
) O
, O
and O
the O
effects O
of O
TERO O
on O
the O
catalytic B-PRO
activity I-PRO
and O
the O
surface B-PRO
properties I-PRO
of O
a O
100-nm O
Ag B-MAT
film B-DSC
catalyst B-APL
deposited O
on O
the O
substrate B-DSC
were O
investigated O
. O


the O
catalytic B-PRO
activity I-PRO
for O
ethanol B-APL
oxidation I-APL
increased O
18-fold O
with O
TERO O
at O
<nUm> O
W O
. O


In O
low B-CMT
energy I-CMT
photoelectron I-CMT
spectroscopy I-CMT
, O
a O
threshold O
energy O
for O
photoelectric B-PRO
emission I-PRO
from O
the O
Ag B-MAT
surface B-DSC
shifted O
linearly O
to O
the O
lower O
energy O
side O
with O
increasing O
power O
of O
TERO O
, O
thus O
indicating O
a O
decrease O
in O
the O
work B-PRO
function I-PRO
of O
the O
Ag B-MAT
surface B-DSC
. O


on O
the O
basis O
of O
the O
behavior O
of O
lattice B-PRO
displacement I-PRO
measured O
by O
a O
laser B-CMT
doppler I-CMT
method I-CMT
, O
a O
model O
for O
changes O
in O
catalytic B-PRO
activity I-PRO
and O
work B-PRO
function I-PRO
is O
proposed O
. O


aging B-PRO
behavior I-PRO
and O
tensile B-PRO
response I-PRO
of O
a O
SiCw B-MAT
reinforced O
eutectoid B-DSC
zinc-aluminium-copper B-MAT
alloy B-DSC
matrix I-DSC
composite I-DSC


A O
CSi B-MAT
whisker B-DSC
- O
reinforced O
eutectoid B-DSC
zinc-aluminum-copper B-MAT
alloy B-DSC
matrix I-DSC
composite I-DSC
( O
SiCw B-MAT
/ O
ZAC B-MAT
) O
was O
fabricated O
via O
a O
vacuum B-SMT
pressure I-SMT
infiltration I-SMT
technique O
and O
investigated O
comprehensively O
by O
comparison O
with O
the O
unreinforced O
ZAC B-MAT
alloy B-DSC
. O


the O
microstructure B-PRO
of O
the O
composite B-DSC
was O
composed O
of O
CSi B-MAT
whiskers B-DSC
, O
Al3Cu5Zn B-MAT
phases O
and O
eutectoids B-DSC
of O
α B-SPL
( O
Al B-PRO
- I-PRO
rich I-PRO
solid B-DSC
solution I-DSC
) O
and O
η B-SPL
( O
Zn B-PRO
- I-PRO
rich I-PRO
solid B-DSC
solution I-DSC
) O
with O
an O
amount O
of O
Al3Cu5Zn B-MAT
phase O
<nUm> O
times O
that O
in O
the O
ZAC B-MAT
alloy B-DSC
. O


the O
density B-PRO
and O
coefficient B-PRO
of I-PRO
thermal I-PRO
expansion I-PRO
of O
the O
composite B-DSC
were O
<nUm> O
g O
/ O
cm3 O
and O
<nUm> O
ppm O
/ O
K O
, O
respectively O
, O
lower O
than O
those O
of O
the O
ZAC B-MAT
alloy B-DSC
. O


compared O
with O
the O
ZAC B-MAT
alloy B-DSC
, O
the O
composite B-DSC
had O
a O
lower O
peak O
aging B-SMT
temperature O
but O
a O
much O
higher O
peak O
aging B-PRO
hardness I-PRO
. O


the O
addition O
of O
SiCw B-MAT
dramatically O
increased O
the O
strength B-PRO
and O
elastic B-PRO
modulus I-PRO
of O
the O
ZAC B-MAT
alloy B-DSC
but O
greatly O
decreased O
the O
ductility B-PRO
. O


the O
ZAC B-MAT
alloy B-DSC
was O
ductile B-PRO
and O
fractured O
in O
the O
mode O
of O
microvoid B-PRO
coalescence I-PRO
. O


In O
contrast O
, O
the O
SiCw B-MAT
/ O
ZAC B-MAT
composite B-DSC
was O
brittle B-PRO
. O


In O
addition O
to O
CSi B-MAT
whiskers B-DSC
, O
brittle B-PRO
Al3Cu5Zn B-MAT
phases O
were O
also O
the O
nucleation O
sites O
of O
microcracks B-PRO
and O
hence O
also O
responsible O
for O
the O
much O
lower O
ductility B-PRO
of O
the O
composite B-DSC
. O


controlled O
synthesis O
of O
O2Ti B-MAT
nanorod B-DSC
arrays I-DSC
immobilized O
on O
ceramic B-DSC
membranes I-DSC
with O
enhanced O
photocatalytic B-PRO
performance I-PRO


In O
this O
work O
, O
O2Ti B-MAT
nanorod B-DSC
arrays I-DSC
( O
NRAs B-DSC
) O
were O
synthesized O
directly O
on O
flat B-DSC
sheet I-DSC
Al2O3 B-MAT
ceramic B-DSC
membrane I-DSC
( O
CM B-DSC
) O
substrates B-DSC
by O
a O
two B-SMT
- I-SMT
step I-SMT
hydrothermal I-SMT
method I-SMT
. O


the O
effects O
of O
the O
addition O
of O
anions O
and O
cations O
and O
the O
preparation O
parameters O
in O
the O
second O
step O
on O
the O
morphology B-PRO
and O
size O
of O
O2Ti B-MAT
were O
investigated O
in O
detail O
, O
and O
the O
photocatalytic B-PRO
activities I-PRO
of O
the O
as-synthesized B-DSC
O2Ti B-MAT
- O
loaded O
ceramic B-DSC
membranes I-DSC
were O
investigated O
by O
the O
degradation B-CMT
of I-CMT
methylene I-CMT
blue I-CMT
( O
MB O
) O
under O
UV O
light O
. O


the O
results O
highlighted O
that O
the O
growth O
of O
O2Ti B-MAT
on O
the O
CM B-DSC
strongly O
depended O
on O
the O
synthesis O
conditions O
. O


the O
anions O
of O
cl- O
and O
br- O
were O
favorable O
for O
the O
further O
growth O
of O
O2Ti B-MAT
nanorods B-DSC
, O
while O
the O
anions O
of O
SO42- O
and O
PO43- O
with O
larger O
ionic O
radius O
and O
higher O
charge B-PRO
number I-PRO
could O
retard O
the O
growth O
of O
O2Ti B-MAT
nanorods B-DSC
. O


the O
SO42- O
and O
PO43- O
could O
accelerate O
the O
formation O
of O
nanospheres B-DSC
or O
nanosheets B-DSC
, O
respectively O
. O


the O
cation O
like O
na+ O
, O
K+ O
, O
mg2+ O
and O
ca2+ O
had O
no O
obvious O
impact O
on O
the O
formation O
of O
O2Ti B-MAT
NRAs B-DSC
. O


O2Ti B-MAT
nanorods B-DSC
exhibited O
the O
highest O
photocatalytic B-PRO
activity I-PRO
, O
as O
about O
<nUm> O
and O
<nUm> O
times O
larger O
than O
those O
of O
O2Ti B-MAT
nanosheets B-DSC
and O
O2Ti B-MAT
nanospheres B-DSC
, O
respectively O
. O


more O
importantly O
, O
the O
as-synthesized B-DSC
O2Ti B-MAT
NRAs B-DSC
- O
loaded O
ceramic B-DSC
membrane I-DSC
could O
be O
easily O
reused O
and O
exhibited O
better O
photocatalytic B-PRO
stability I-PRO
. O


these O
findings O
would O
aid O
the O
development O
of O
O2Ti B-MAT
photocatalytic B-APL
materials I-APL
with O
high O
performance O
. O


fabrication O
and O
mechanism O
of O
high O
performance O
bipolar B-APL
resistive I-APL
switching I-APL
device I-APL
based O
on O
O3SrTi B-MAT
/ O
NiO B-MAT
stacked O
heterostructure B-DSC


this O
paper O
reports O
the O
bipolar B-PRO
resistive I-PRO
switching I-PRO
effect I-PRO
in O
a O
O3SrTi B-MAT
/ O
NiO B-MAT
stacked O
heterostructure B-DSC
which O
was O
epitaxially O
deposited O
on O
an O
Nb B-MAT
doped B-DSC
O3SrTi B-MAT
substrate B-DSC
by O
pulsed B-SMT
laser I-SMT
deposition I-SMT
. O


this O
heterostructure B-DSC
shows O
high O
resistive B-PRO
switching I-PRO
ratio I-PRO
of O
over O
<nUm> O
at O
the O
read O
voltage O
of O
− O
<nUm> O
V O
and O
an O
expected O
retention B-PRO
ability I-PRO
of O
ten O
years O
, O
which O
is O
better O
than O
that O
of O
NiO-based B-MAT
device O
. O


moreover O
, O
the O
resistive B-PRO
switching I-PRO
ratio I-PRO
can O
be O
adjusted O
by O
changing O
the O
maximum O
applied O
voltage O
or O
compliance O
current O
, O
which O
shows O
promising O
for O
multilevel B-APL
nonvolatile I-APL
memories I-APL
application I-APL
. O


meanwhile O
, O
these O
results O
have O
been O
discussed O
by O
carrier O
injection O
- O
trapped O
/ O
detrapped O
process O
. O


on O
the O
hysteresis B-PRO
and O
memory B-PRO
properties I-PRO
of O
the O
silicon B-MAT
- O
silicon B-MAT
nitride I-MAT
system O


A O
close O
examination O
of O
the O
hysteresis B-PRO
experienced O
in O
the O
C-V B-CMT
curves I-CMT
and O
of O
the O
memory B-PRO
properties I-PRO
of O
MNS B-APL
capacitors I-APL
has O
been O
made O
. O


both O
the O
gate B-APL
and O
the O
silicon B-MAT
inject O
carriers O
into O
the O
nitride B-MAT
giving O
hysteresis B-CMT
curves I-CMT
which O
change O
in O
sense O
as O
the O
bias O
sweep O
- O
frequency O
is O
reduced O
. O


from O
these O
measurements O
it O
was O
seen O
that O
the O
trapping B-PRO
time I-PRO
constants I-PRO
in O
the O
silicon B-MAT
nitride I-MAT
were O
much O
slower O
for O
holes O
than O
for O
electrons O
, O
and O
that O
there O
is O
a O
distribution O
of O
traps O
throughout O
the O
nitride B-MAT
which O
contribute O
to O
the O
hysteresis B-PRO
phenomenon I-PRO
. O


the O
movement O
of O
the O
C-V B-CMT
curves I-CMT
along O
the O
bias O
axis O
was O
found O
to O
vary O
somewhat O
depending O
upon O
whether O
an O
oxide B-MAT
layer B-DSC
was O
present O
between O
the O
silicon B-MAT
and O
the O
silicon B-MAT
nitride I-MAT
. O


switching O
was O
difficult O
without O
the O
oxide B-MAT
present O
but O
very O
stable O
, O
with O
a O
thin B-DSC
oxide B-MAT
present O
switching O
was O
easier O
but O
instabilities O
existed O
, O
and O
with O
a O
thick O
oxide B-MAT
present O
no O
switching O
occurred O
at O
all O
. O


At O
low O
temperatures O
there O
was O
absolutely O
no O
movement O
of O
the O
C-V B-CMT
curves I-CMT
even O
at O
very O
high O
voltages O
( O
≃ O
<nUm> O
V O
) O
. O


from O
the O
measurements O
it O
may O
be O
concluded O
that O
the O
traps O
causing O
the O
hysteresis B-PRO
are O
different O
from O
the O
traps O
causing O
the O
switching O
. O


effect O
of O
low B-SMT
- I-SMT
energy I-SMT
electron I-SMT
irradiation I-SMT
on O
( B-MAT
Bi I-MAT
, I-MAT
Pb I-MAT
) I-MAT
- I-MAT
<nUm> I-MAT
superconductors B-PRO


the O
effect O
of O
low B-SMT
- I-SMT
energy I-SMT
electron I-SMT
irradiation I-SMT
on O
the O
properties O
of O
the O
bi-based B-MAT
superconductors B-PRO
is O
studied O
. O


two O
sets O
of O
polycrystalline B-DSC
( B-MAT
Bi I-MAT
, I-MAT
Pb I-MAT
) I-MAT
- I-MAT
<nUm> I-MAT
samples O
were O
synthesized O
by O
heating B-SMT
the O
appropriate O
mixtures O
of O
powders B-DSC
at O
<nUm> O
° O
C O
for O
<nUm> O
h O
, O
then O
quenched B-SMT
or O
furnace B-SMT
cooled I-SMT
to O
room O
temperature O
. O


the O
samples O
were O
irradiated B-SMT
by O
low O
- O
energy O
( O
<nUm> O
– O
<nUm> O
keV O
) O
, O
pulsed O
( O
<nUm> O
ns O
) O
electron O
beam O
up O
to O
a O
dose O
of O
<nUm> O
× O
<nUm> O
cm-2 O
. O


x-ray B-CMT
diffraction I-CMT
patterns O
, O
resistance B-PRO
- I-PRO
temperature I-PRO
behaviours I-PRO
, O
critical B-PRO
currents I-PRO
, O
and O
micrographs B-CMT
of O
the O
samples O
were O
examined O
before O
and O
after O
the O
irradiation B-SMT
. O


for O
the O
quenched B-SMT
samples O
, O
the O
normal B-PRO
state I-PRO
resistance I-PRO
increases O
and O
the O
Tc B-PRO
drastically O
decreases O
with O
electron B-SMT
irradiation I-SMT
. O


for O
the O
furnace B-SMT
- I-SMT
cooled I-SMT
samples O
, O
Tc B-PRO
first O
improves O
by O
about O
<nUm> O
° O
C O
up O
to O
a O
dose O
of O
<nUm> O
× O
<nUm> O
cm-2 O
, O
then O
drops O
down O
with O
further O
irradiation B-SMT
. O


At O
high O
levels O
of O
doses O
, O
the O
super B-PRO
conducting I-PRO
parameters I-PRO
degrade O
or O
vanish O
due O
to O
the O
increased O
resistance B-PRO
of O
the O
samples O
. O


we O
propose O
that O
the O
electron B-SMT
irradiation I-SMT
causes O
ionizations O
that O
may O
alter O
the O
oxygen O
and O
hole B-PRO
concentrations I-PRO
as O
well O
as O
the O
pining B-PRO
centers I-PRO
and O
the O
links O
between O
the O
grains O
leading O
the O
changes O
reported O
here O
. O


photocatalytic B-PRO
activities I-PRO
of O
hydrothermally B-SMT
synthesized I-SMT
H3InO3 B-MAT
and O
In2O3 B-MAT
nanocubes B-DSC


indium B-MAT
oxide I-MAT
[In2O3] I-MAT
nanocubes B-DSC
were O
obtained O
through O
thermal B-SMT
treatment I-SMT
of O
the O
hydrothermally B-SMT
synthesized I-SMT
indium B-MAT
hydroxide I-MAT
[In(OH)3] I-MAT
nanocubes B-DSC
. O


the O
photocatalytic B-PRO
activities I-PRO
of O
H3InO3 B-MAT
and O
In2O3 B-MAT
nanocubes B-DSC
have O
been O
evaluated O
by O
the O
degradation O
of O
crystal O
violet O
in O
an O
aqueous O
solution O
. O


the O
degradation O
rate O
of O
crystal O
violet O
under O
UV O
irradiation O
in O
In2O3 B-MAT
containing O
aqueous O
is O
much O
higher O
than O
that O
in O
H3InO3 B-MAT
aqueous O
, O
which O
may O
be O
attributed O
to O
the O
formation O
of O
more O
defects O
as O
well O
as O
more O
active O
sites O
for O
interactions O
after O
thermal B-SMT
treatment I-SMT
of O
H3InO3 B-MAT
. O


improving O
the O
performance O
of O
solid B-APL
- I-APL
state I-APL
dye I-APL
- I-APL
sensitized I-APL
solar I-APL
cell I-APL
using O
MgO B-MAT
- O
coated B-DSC
O2Ti B-MAT
nanoporous B-DSC
film I-DSC


an O
ultrathin B-DSC
overlayer I-DSC
of O
MgO B-MAT
on O
O2Ti B-MAT
is O
shown O
to O
drastically O
improve O
the O
stability B-PRO
of O
solid B-APL
- I-APL
state I-APL
dye I-APL
- I-APL
sensitized I-APL
solar I-APL
cell I-APL
using O
CuI B-MAT
as O
a O
hole B-PRO
conductor I-PRO
in O
addition O
to O
solar B-PRO
energy I-PRO
conversion I-PRO
efficiency I-PRO
. O


growth O
of O
variable O
aspect O
ratio O
OZn B-MAT
nanorods B-DSC
by O
solochemical B-SMT
processing I-SMT


In O
this O
work O
, O
variable O
aspect O
ratio O
( O
length O
divided O
by O
diameter O
) O
zinc B-MAT
oxide I-MAT
nanorods B-DSC
were O
synthesized O
through O
a O
simple O
solochemical B-SMT
method I-SMT
by O
reacting O
a O
zn2+ O
precursor O
with O
sodium O
hydroxide O
at O
low O
reaction O
temperatures O
. O


the O
analysis O
of O
the O
x-ray B-CMT
diffraction I-CMT
data O
indicated O
that O
the O
samples O
had O
hexagonal B-SPL
wurtzite I-SPL
structure B-PRO
and O
nanometric O
size O
crystallites B-DSC
. O


the O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
images O
of O
the O
products O
prepared O
at O
<nUm> O
and O
<nUm> O
° O
C O
exhibited O
rod B-DSC
- I-DSC
like I-DSC
architecture O
, O
showing O
that O
the O
reaction O
temperature O
did O
not O
affect O
the O
OZn B-MAT
morphology B-PRO
. O


the O
average O
aspect O
ratio O
of O
the O
OZn B-MAT
nanorods B-DSC
decreased O
from O
<nUm> O
to O
<nUm> O
when O
the O
reaction O
temperature O
was O
raised O
from O
<nUm> O
to O
<nUm> O
° O
C O
. O


the O
samples O
presented O
a O
blue O
shift O
in O
the O
excitonic B-PRO
absorption I-PRO
compared O
to O
OZn B-MAT
bulk B-DSC
that O
increased O
alongside O
with O
reaction O
temperature O
. O


In O
addition O
, O
this O
research O
investigated O
the O
results O
obtained O
by O
varying O
the O
concentration O
of O
zinc O
chloride O
solution O
. O


At O
the O
same O
temperature O
, O
it O
could O
be O
verified O
that O
when O
the O
zinc B-MAT
concentration O
was O
increased O
, O
the O
diameter O
of O
the O
OZn B-MAT
nanorods B-DSC
also O
slightly O
increased O
, O
and O
much O
shorter O
nanorods B-DSC
were O
achieved O
, O
especially O
in O
the O
reactions O
performed O
at O
<nUm> O
and O
<nUm> O
° O
C O
. O


finally O
, O
the O
growth B-PRO
mechanism I-PRO
of O
the O
OZn B-MAT
nanostructures B-DSC
was O
proposed O
based O
on O
the O
results O
obtained O
by O
changing O
the O
zinc B-MAT
precursor O
concentration O
and O
reaction O
temperature O
. O


optically O
monitored O
electrodeposition B-SMT
of O
thin B-DSC
CdSe B-MAT
films B-DSC


interference O
in O
the O
light O
reflected O
from O
a O
semiconducting B-PRO
non-oxide B-MAT
film B-DSC
was O
observed O
for O
the O
first O
time O
during O
the O
electrodeposition B-SMT
of O
CdSe B-MAT
. O


the O
in O
situ O
experimental O
curve O
was O
compared O
with O
that O
calculated O
using O
fresnel B-CMT
's I-CMT
equations I-CMT
, O
which O
were O
modified O
to O
take O
into O
account O
the O
non-unformity B-PRO
of O
the O
film B-DSC
. O


preparation O
and O
properties O
of O
nitrogen O
doped B-DSC
p B-PRO
- I-PRO
type I-PRO
zinc B-MAT
oxide I-MAT
films B-DSC
by O
reactive B-SMT
magnetron I-SMT
sputtering I-SMT


A O
nitrogen O
doped B-DSC
zinc B-MAT
oxide I-MAT
( O
OZn B-MAT
: I-MAT
N I-MAT
) O
film B-DSC
was O
deposited O
on O
a O
quartz B-MAT
substrate B-DSC
at O
<nUm> O
K O
by O
reactive B-SMT
radio-frequency I-SMT
( I-SMT
rf I-SMT
) I-SMT
magnetron I-SMT
sputtering I-SMT
using O
mixture O
of O
nitrogen O
and O
oxygen O
as O
sputtering B-SMT
gas O
. O


hall B-CMT
measurement I-CMT
results O
indicate O
that O
the O
OZn B-MAT
: I-MAT
N I-MAT
film B-DSC
behaves O
p B-PRO
- I-PRO
type I-PRO
conduction I-PRO
after O
annealed B-SMT
at O
<nUm> O
K O
, O
which O
has O
the O
lower O
room O
temperature O
resistivity B-PRO
of O
<nUm> O
Ω O
cm O
, O
hall B-PRO
mobility I-PRO
of O
<nUm> O
cm2 O
/ O
vs O
and O
carrier B-PRO
concentration I-PRO
of O
<nUm> O
× O
<nUm> O
cm-3 O
, O
respectively O
. O


compositional B-CMT
analysis I-CMT
confirmed O
the O
nitrogen O
( O
N O
) O
is O
incorporated O
into O
the O
OZn B-MAT
and O
the O
N O
occupies O
two O
chemical B-PRO
states I-PRO
in O
the O
OZn B-MAT
: I-MAT
N I-MAT
. O


the O
OZn B-MAT
: I-MAT
N I-MAT
film B-DSC
has O
high O
optical B-PRO
quality I-PRO
and O
displays O
the O
stronger O
near B-PRO
band I-PRO
edge I-PRO
( I-PRO
NBE I-PRO
) I-PRO
emission I-PRO
in O
the O
temperature B-CMT
- I-CMT
dependent I-CMT
photoluminescence I-CMT
spectrum O
, O
the O
acceptor B-PRO
energy I-PRO
level I-PRO
was O
estimated O
to O
be O
located O
<nUm> O
meV O
above O
the O
valence O
band O
. O


mechanism O
of O
the O
p B-PRO
- I-PRO
type I-PRO
conductivity I-PRO
of O
the O
OZn B-MAT
: I-MAT
N I-MAT
film B-DSC
was O
discussed O
in O
the O
present O
work O
. O


effect O
of O
high O
- O
temperature O
preheating B-SMT
on O
the O
selective B-SMT
laser I-SMT
melting I-SMT
of O
yttria B-MAT
- I-MAT
stabilized I-MAT
zirconia I-MAT
ceramic B-DSC


selective B-SMT
laser I-SMT
melting I-SMT
( O
SLM B-SMT
) O
is O
one O
of O
the O
current O
rapid O
fabrication O
technology O
methods O
which O
has O
wide O
potential O
application O
in O
the O
aerospace B-APL
, O
medical B-APL
, O
consumer B-APL
products I-APL
and O
automotive B-APL
industries I-APL
. O


currently O
, O
ceramic B-DSC
materials O
are O
not O
used O
as O
widely O
as O
metal O
and O
polymer O
materials O
due O
to O
the O
high O
melting B-PRO
point I-PRO
, O
high O
- O
temperature O
strength B-PRO
and O
low O
thermal B-PRO
conductivity I-PRO
, O
which O
influence O
the O
microstructure B-PRO
and O
density B-PRO
of O
ceramic B-DSC
samples O
during O
SLM B-SMT
fabrication O
. O


the O
most O
effective O
method O
of O
reducing O
cracks O
is O
the O
preheating B-SMT
at O
high O
temperature O
of O
the O
ceramic B-DSC
powder I-DSC
during O
SLM B-SMT
process O
. O


this O
paper O
presents O
the O
selective B-SMT
melting I-SMT
of O
yttria B-MAT
- I-MAT
stabilized I-MAT
zirconia I-MAT
( O
O2Zr B-MAT
– I-MAT
O3Y2 I-MAT
<nUm> I-MAT
– I-MAT
<nUm> I-MAT
) O
ceramic B-DSC
using O
a O
<nUm> O
mm O
wavelength O
fibre O
laser O
with O
high O
- O
temperature O
preheating B-SMT
at O
<nUm> O
– O
<nUm> O
° O
C O
, O
and O
an O
additional O
CHEVAL B-APL
Nd I-APL
- I-APL
YAG I-APL
laser I-APL
for O
the O
preheating B-SMT
of O
the O
powder B-DSC
bed O
before O
scanning O
. O


In O
this O
paper O
, O
the O
influence O
of O
different O
laser O
powers O
and O
different O
scanning O
velocities O
on O
the O
microstructure B-PRO
, O
relative B-PRO
density I-PRO
and O
deformation B-PRO
of O
the O
ceramic B-DSC
sample O
is O
investigated O
; O
in O
particular O
, O
the O
effect O
of O
preheating B-SMT
on O
the O
morphology B-PRO
of O
the O
micro-cracks O
is O
discussed O
. O


experimental O
results O
show O
that O
high O
- O
temperature O
preheating B-SMT
in O
<nUm> O
mm O
diameter O
range O
is O
possible O
with O
the O
Nd B-MAT
- O
YAG B-MAT
laser B-APL
, O
and O
that O
orderly O
cracks O
are O
transformed O
into O
disordered O
little O
cracks O
by O
the O
high O
- O
temperature O
preheating B-SMT
. O


with O
preheating B-SMT
to O
<nUm> O
° O
C O
, O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
, O
the O
relative B-PRO
density I-PRO
of O
the O
sample O
made O
by O
mixing O
fine O
powder B-DSC
( O
<nUm> O
– O
<nUm> O
mm O
, O
20wt O
% O
) O
and O
coarse O
powder B-DSC
( O
<nUm> O
– O
<nUm> O
mm O
, O
80wt O
% O
) O
is O
increased O
by O
<nUm> O
% O
( O
without O
preheating B-SMT
) O
to O
<nUm> O
– O
<nUm> O
% O
. O


the O
transformation O
of O
the O
monoclinic B-SPL
and O
cubic B-SPL
structures O
to O
a O
tetragonal B-SPL
structure O
is O
observed O
during O
the O
process O
of O
melting B-SMT
and O
cooling B-SMT
, O
and O
increasing O
the O
preheating B-SMT
temperature O
to O
<nUm> O
° O
C O
, O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
is O
more O
suited O
to O
the O
formation O
of O
tetragonal B-SPL
crystals B-DSC
. O


preparation O
and O
characterization O
of O
metalorganic B-SMT
decomposition I-SMT
- O
derived O
Bi2O9SrTa2 B-MAT
thin B-DSC
films I-DSC


we O
report O
the O
preparation O
and O
characterization O
of O
ferroelectric B-PRO
Bi2O9SrTa2 B-MAT
( O
SBT B-MAT
) O
thin B-DSC
films I-DSC
derived O
from O
metalorganic B-SMT
decomposition I-SMT
( O
MOD B-SMT
) O
along O
with O
the O
spin-on B-SMT
technique I-SMT
. O


film B-DSC
composition B-PRO
was O
analyzed O
by O
inductively B-CMT
coupled I-CMT
plasma I-CMT
( I-CMT
ICP I-CMT
) I-CMT
analysis I-CMT
and O
rutherfold B-CMT
backscattering I-CMT
( I-CMT
RBS I-CMT
) I-CMT
spectroscopy I-CMT
. O


x-ray B-CMT
diffraction I-CMT
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
and O
electrical B-CMT
measurements I-CMT
showed O
well O
- O
crystallized O
SBT B-MAT
thin B-DSC
films I-DSC
with O
uniform O
surface B-DSC
and O
excellent O
ferroelectric B-PRO
properties I-PRO
after O
annealing B-SMT
in O
O O
above O
<nUm> O
° O
C O
. O


the O
remanent B-PRO
polarization I-PRO
( O
Pr B-PRO
) O
at O
<nUm> O
V O
stimulus O
voltage O
was O
<nUm> O
– O
<nUm> O
and O
<nUm> O
– O
<nUm> O
mC O
/ O
cm2 O
for O
<nUm> O
nm O
- O
thick O
films B-DSC
annealed B-SMT
at O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
. O


the O
coercive B-PRO
field I-PRO
was O
only O
around O
<nUm> O
kV O
/ O
cm O
. O


good O
resistance B-PRO
against I-PRO
fatigue I-PRO
and O
excellent O
retention B-PRO
properties I-PRO
were O
observed O
up O
to O
<nUm> O
bipolar O
switching O
cycles O
and O
<nUm> O
× O
<nUm> O
s O
, O
respectively O
. O


synthesis O
by O
citric B-SMT
acid I-SMT
sol I-SMT
– I-SMT
gel I-SMT
method O
and O
electrochemical B-PRO
properties I-PRO
of O
Li4O12Ti5 B-MAT
anode B-APL
material O
for O
lithium B-APL
- I-APL
ion I-APL
battery I-APL


spinel B-SPL
Li4O12Ti5 B-MAT
particles B-DSC
have O
been O
synthesized O
by O
a O
sol B-SMT
– I-SMT
gel I-SMT
method O
with O
citric O
acid O
as O
a O
chelating O
agent O
and O
CLi2O3 B-MAT
and O
tetrabutyl O
titanate O
( O
C16H36O4Ti O
) O
as O
starting O
materials O
. O


the O
samples O
have O
been O
characterized O
by O
means O
of O
IR B-CMT
, O
XRD B-CMT
, O
XPS B-CMT
and O
SEM B-CMT
. O


these O
analyses O
indicated O
that O
the O
prepared O
Li B-MAT
– I-MAT
Ti I-MAT
– I-MAT
O I-MAT
powder B-DSC
belonged O
to O
a O
spinel B-SPL
structure O
and O
had O
a O
uniform O
cubic B-SPL
morphology B-PRO
with O
an O
average O
particle O
size O
of O
<nUm> O
nm O
. O


citric O
acid O
has O
a O
great O
effect O
on O
obtaining O
excellent O
phase B-PRO
purity I-PRO
and O
good O
stoichiometric B-DSC
inorganic O
oxides B-MAT
. O


its O
electrochemical B-PRO
behavior I-PRO
was O
evaluated O
in O
a O
liquid B-APL
electrolyte I-APL
in O
lithium B-APL
- I-APL
ion I-APL
batteries I-APL
. O


At O
a O
voltage O
plateau O
located O
at O
1.55V(versus O
Li B-MAT
) O
, O
the O
Li4O12Ti5 B-MAT
electrode B-APL
exhibited O
an O
initial O
discharge B-PRO
capacity I-PRO
of O
<nUm> O
mAhg-1 O
and O
a O
subsequent O
charge B-PRO
capacity I-PRO
of O
<nUm> O
mAhg-1 O
. O


the O
very O
flat O
discharge B-PRO
and O
charge B-PRO
curves I-PRO
indicated O
that O
the O
electrochemical O
reaction O
based O
on O
ti4+ O
/ O
ti3+redox O
couple O
was O
a O
typical O
two O
- O
phase O
reaction O
. O


the O
results O
of O
cyclic B-CMT
voltammetry I-CMT
for O
Li4O12Ti5 B-MAT
showed O
that O
at O
the O
potential B-PRO
range I-PRO
from O
<nUm> O
to O
<nUm> O
V O
( O
versus O
Li B-MAT
) O
, O
there O
was O
a O
pair O
of O
reversible O
redox B-PRO
peaks I-PRO
correspond O
to O
the O
process O
of O
li+ O
intercalation O
and O
de-intercalation O
in O
the O
spinel B-SPL
Li B-MAT
– I-MAT
Ti I-MAT
– I-MAT
O I-MAT
oxides I-MAT
. O


effect O
of O
surfactant O
Sb B-MAT
on O
In B-MAT
incorporation O
and O
thin B-DSC
film I-DSC
morphology B-PRO
of O
GaInN B-MAT
layers B-DSC
grown O
by O
organometallic B-SMT
vapor I-SMT
phase I-SMT
epitaxy I-SMT


the O
effects O
of O
the O
surfactant O
Sb B-MAT
on O
GaInN B-MAT
grown O
by O
organometallic B-SMT
vapor I-SMT
phase I-SMT
epitaxy I-SMT
( O
OMVPE B-SMT
) O
were O
studied O
. O


eight O
samples O
of O
GaInN B-MAT
were O
grown O
with O
Sb B-PRO
concentrations I-PRO
ranging O
from O
<nUm> O
% O
to O
<nUm> O
% O
. O


characterization O
was O
done O
by O
photoluminescence B-CMT
( O
PL B-CMT
) O
and O
atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
. O


an O
abrupt O
change O
in O
PL B-CMT
emission O
peak O
energy O
and O
surface B-PRO
morphology I-PRO
occurred O
at O
a O
certain O
critical O
Sb B-MAT
concentration O
. O


above O
and O
below O
this O
threshold O
concentration O
two O
distinct O
regimes O
of O
surface B-PRO
morphology I-PRO
and O
PL B-CMT
emission O
characteristics O
were O
observed O
. O


this O
effect O
was O
interpreted O
as O
due O
to O
a O
surfactant O
- O
induced O
change O
of O
surface B-PRO
phase I-PRO
on O
the O
GaInN B-MAT
films B-DSC
. O


microstructure B-PRO
and O
optical B-PRO
properties I-PRO
of O
Mg B-MAT
x I-MAT
zn1-x I-MAT
O I-MAT
thin B-DSC
films I-DSC
grown O
by O
means O
of O
pulsed B-SMT
laser I-SMT
deposition I-SMT


the O
single B-DSC
- I-DSC
phase I-DSC
epitaxial O
MgxZn1-xO B-MAT
( I-MAT
<nUm> I-MAT
< I-MAT
x I-MAT
< I-MAT
<nUm> I-MAT
) I-MAT
alloy B-DSC
films I-DSC
with O
wide O
band B-PRO
gap I-PRO
have O
been O
deposited O
on O
cubic B-SPL
AlLaO3 B-MAT
( O
LAO B-MAT
) O
( O
<nUm> O
) O
substrates B-DSC
by O
pulsed B-SMT
laser I-SMT
deposition I-SMT
( O
PLD B-SMT
) O
. O


x-ray B-CMT
diffraction I-CMT
measurement O
and O
TEM B-CMT
photograph O
indicate O
that O
the O
cubic B-SPL
phase O
could O
be O
stabilized O
up O
to O
Zn B-PRO
content I-PRO
about O
<nUm> O
without O
any O
phase O
separation O
. O


films B-DSC
and O
substrates B-DSC
have O
a O
good O
heteroepitaxial O
relationship O
of O
( O
<nUm> O
) O
MgxZn1-xO||(100)LAO B-MAT
( O
out O
- O
of O
- O
plane O
) O
and O
(011)MgxZn1-xO||(010)LAO B-MAT
( O
in-plane O
) O
. O


the O
lattice B-PRO
parameters I-PRO
a O
of O
MgxZn1-xO B-MAT
films B-DSC
increase O
almost O
linearly O
with O
increasing O
OZn B-MAT
composition B-PRO
, O
while O
the O
band B-PRO
gap I-PRO
energy I-PRO
of O
the O
materials O
increases O
from O
<nUm> O
to O
<nUm> O
eV O
by O
alloying B-SMT
with O
more O
MgO B-MAT
. O


the O
cross-section B-PRO
morphology I-PRO
reveals O
layer O
thickness O
of O
about O
<nUm> O
– O
<nUm> O
nm O
and O
AFM B-CMT
scan O
over O
a O
<nUm> O
mm O
× O
<nUm> O
mm O
area O
reveals O
a O
surface B-PRO
roughness I-PRO
Ra I-PRO
of O
about O
<nUm> O
nm O
. O


dielectric B-PRO
and O
electromechanical B-PRO
properties I-PRO
of O
sol B-SMT
- I-SMT
gel I-SMT
prepared O
PZT B-MAT
thin B-DSC
films I-DSC
on O
metallic B-PRO
substrates B-DSC


this O
article O
reports O
about O
the O
dielectric B-PRO
and O
electromechanical B-PRO
properties I-PRO
of O
sol B-SMT
- I-SMT
gel I-SMT
derived O
ferroelectric B-PRO
PZT B-MAT
films B-DSC
on O
metallic B-PRO
substrates B-DSC
. O


PZT(53 B-MAT
/ I-MAT
<nUm> I-MAT
) I-MAT
films B-DSC
deposited O
directly O
on O
metallic B-PRO
substrates B-DSC
( O
hastelloy B-MAT
C-276 I-MAT
) O
show O
a O
strong O
thickness O
dependence O
of O
their O
dielectric B-PRO
and O
electromechanical B-PRO
properties I-PRO
as O
well O
. O


this O
dependence O
can O
be O
described O
by O
a O
model O
assuming O
an O
interface B-DSC
layer I-DSC
between O
substrate B-DSC
and O
PZT B-MAT
film B-DSC
. O


by O
applying O
an O
additional O
electrode B-APL
between O
substrate B-DSC
and O
PZT B-MAT
film B-DSC
the O
formation O
of O
the O
interface B-DSC
layer I-DSC
can O
be O
minimized O
and O
a O
significant O
reduction O
of O
the O
thickness O
dependence O
as O
well O
as O
a O
general O
improvement O
of O
the O
film B-DSC
properties O
was O
observed O
. O


by O
varying O
the O
Zr B-PRO
/ I-PRO
Ti I-PRO
- I-PRO
ratio I-PRO
it O
was O
found O
that O
the O
extrema O
of O
the O
dielectric B-PRO
and O
piezoelectric B-PRO
coefficients I-PRO
are O
shifted O
towards O
Ti B-PRO
- I-PRO
rich I-PRO
stoichiometries I-PRO
compared O
to O
bulk B-DSC
ceramics I-DSC
. O


for O
PZT B-MAT
thin B-DSC
films I-DSC
with O
optimized O
preparation O
conditions O
nearly O
rectangular O
hysteresis B-PRO
loops I-PRO
with O
a O
coercive B-PRO
field I-PRO
strength I-PRO
of O
<nUm> O
V O
/ O
mm O
, O
a O
piezoelectric B-PRO
coefficient I-PRO
d33 I-PRO
of O
<nUm> O
pm O
/ O
V O
and O
strains O
up O
to O
<nUm> O
% O
were O
obtained O
. O


antiferroelectric B-PRO
PZT B-MAT
( I-MAT
<nUm> I-MAT
/ I-MAT
<nUm> I-MAT
) I-MAT
films B-DSC
could O
be O
deposited O
in O
a O
good O
quality O
on O
an O
oxidic B-MAT
electrode B-APL
, O
too O
. O


the O
observed O
field O
- O
induced O
antiferroelectric B-PRO
– I-PRO
ferroelectric I-PRO
phase I-PRO
transition I-PRO
is O
accompanied O
by O
high O
strains O
. O


furthermore O
, O
bending B-PRO
resonance I-PRO
modes I-PRO
of O
samples O
with O
different O
geometries O
and O
the O
tip O
displacement O
of O
a O
simple O
cantilever O
under O
a O
dc O
- O
field O
were O
investigated O
. O


by O
controlled O
bending O
of O
the O
substrate B-DSC
charges O
up O
to O
<nUm> O
mC O
/ O
cm2 O
could O
be O
obtained O
. O


on O
the O
other O
hand O
, O
tip O
displacements O
of O
up O
to O
<nUm> O
mm O
could O
be O
realized O
by O
applying O
a O
voltage O
of O
<nUm> O
V O
/ O
mm O
, O
respectively O
. O


synthesis O
of O
OZn B-MAT
nanoparticles B-DSC
using O
surfactant B-CMT
free I-CMT
in-air I-CMT
and I-CMT
microwave I-CMT
method I-CMT


zinc B-MAT
oxide I-MAT
nanoparticles B-DSC
have O
been O
successfully O
prepared O
by O
a O
facile O
route O
involving O
the O
reaction O
of O
zinc B-MAT
sulphate I-MAT
heptahydrate I-MAT
and O
sodium O
hydroxide O
through O
drop B-SMT
- I-SMT
by I-SMT
- I-SMT
drop I-SMT
mixing I-SMT
synthesis-IA I-SMT
, O
instant B-SMT
mixing I-SMT
synthesis-IA I-SMT
and O
under O
the O
influence O
of O
microwave B-SMT
radiations I-SMT
. O


the O
synthesis O
under O
different O
reaction O
conditions O
played O
an O
important O
role O
and O
led O
to O
the O
formation O
of O
zinc B-MAT
oxide I-MAT
nanoparticles B-DSC
of O
different O
size O
and O
shapes O
. O


the O
synthesized O
nanoparticles B-DSC
were O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
techniques O
. O


the O
concentration O
dependent O
antimicrobial B-PRO
activity I-PRO
of O
synthesized O
OZn B-MAT
nanoparticles B-DSC
was O
carried O
out O
. O


the O
photocatalytic B-PRO
activity I-PRO
was O
evaluated O
using O
the O
photodegradation B-CMT
of I-CMT
methylene I-CMT
blue I-CMT
( I-CMT
MB I-CMT
) I-CMT
dye I-CMT
under I-CMT
UV I-CMT
irradiation I-CMT
. O


further O
, O
the O
optical B-PRO
properties I-PRO
of O
as-prepared B-DSC
OZn B-MAT
nanoparticles B-DSC
were O
investigated O
by O
UV B-CMT
– I-CMT
vis I-CMT
spectrophotometry I-CMT
. O


the O
absence O
of O
surfactant O
led O
to O
a O
simple O
, O
cheap O
and O
fast O
method O
of O
synthesis O
of O
zinc B-MAT
oxide I-MAT
nanoparticles B-DSC
. O


iodide O
substitution O
in O
lithium B-MAT
borohydride I-MAT
, O
BH4Li B-MAT
– I-MAT
ILi I-MAT


the O
new O
concept O
, O
anion O
substitution O
, O
is O
explored O
for O
possible O
improvement O
of O
hydrogen B-PRO
storage I-PRO
properties I-PRO
in O
the O
system O
BH4Li B-MAT
– I-MAT
ILi I-MAT
. O


the O
structural B-PRO
chemistry I-PRO
and O
the O
substitution B-PRO
mechanism I-PRO
are O
analyzed O
using O
rietveld B-CMT
refinement I-CMT
of O
in O
situ O
synchrotron B-CMT
radiation I-CMT
powder I-CMT
x-ray I-CMT
diffraction I-CMT
( O
SR B-CMT
- I-CMT
PXD I-CMT
) O
data O
, O
attenuated B-CMT
total I-CMT
reflectance I-CMT
infrared I-CMT
spectroscopy I-CMT
( O
ATR-IR B-CMT
) O
, O
differential B-CMT
scanning I-CMT
calorimetry I-CMT
( O
DSC B-CMT
) O
and O
sieverts B-CMT
measurements I-CMT
. O


anion O
substitution O
is O
observed O
as O
formation O
of O
two O
solid B-DSC
solutions I-DSC
of O
Li(BH4)1-xIx B-MAT
, O
which O
merge O
into O
one O
upon O
heating B-SMT
. O


the O
solid B-DSC
solutions I-DSC
have O
hexagonal B-SPL
structures O
( O
space O
group O
p63mc B-SPL
) O
similar O
to O
the O
structures O
of O
h-LiBH4 B-MAT
and O
b-LiI B-MAT
. O


the O
solid B-DSC
solutions I-DSC
have O
iodide B-PRO
contents I-PRO
in O
the O
range O
∼ O
<nUm> O
– O
<nUm> O
mol O
% O
and O
are O
stable O
from O
below O
room O
temperature O
to O
the O
melting B-PRO
point I-PRO
at O
<nUm> O
° O
C O
. O


thus O
the O
stability B-PRO
of O
the O
solid B-DSC
solutions I-DSC
is O
higher O
as O
compared O
to O
that O
of O
the O
orthorhombic B-SPL
and O
hexagonal B-SPL
polymorphs O
of O
BH4Li B-MAT
and O
a- B-MAT
and O
b-LiI B-MAT
. O


furthermore O
, O
the O
rehydrogenation B-PRO
properties I-PRO
of O
the O
iodide O
substituted O
solid B-DSC
solution I-DSC
Li(BH4)1-xIx B-MAT
, O
measured O
by O
the O
sieverts B-CMT
method I-CMT
, O
are O
improved O
as O
compared O
to O
those O
of O
BH4Li B-MAT
. O


after O
four O
cycles O
of O
hydrogen O
release O
and O
uptake O
the O
Li(BH4)1-xIx B-MAT
solid B-DSC
solution I-DSC
maintains O
<nUm> O
% O
of O
the O
calculated O
hydrogen B-PRO
storage I-PRO
capacity I-PRO
in O
contrast O
to O
BH4Li B-MAT
, O
which O
maintains O
only O
<nUm> O
% O
of O
the O
storage B-PRO
capacity I-PRO
after O
two O
cycles O
under O
identical O
conditions O
. O


an O
infra-red O
study O
of O
defects O
produced O
in O
n B-PRO
- I-PRO
type I-PRO
silicon B-MAT
by O
electron B-SMT
irradiation I-SMT
at O
low O
temperatures O


the O
infra-red B-CMT
local I-CMT
mode I-CMT
absorption I-CMT
produced O
by O
irradiation B-SMT
of O
n B-PRO
- I-PRO
type I-PRO
silicon B-MAT
by O
<nUm> O
MeV O
electrons O
at O
temperatures O
in O
the O
range O
<nUm> O
– O
<nUm> O
° O
K O
has O
been O
investigated O
. O


A O
new O
band O
at O
<nUm> O
cm-1 O
has O
been O
observed O
and O
interpreted O
as O
due O
to O
a O
vacancy B-PRO
— I-PRO
oxygen I-PRO
complex I-PRO
( O
a-centre B-PRO
) O
with O
a O
trapped O
electron O
. O


morphology B-PRO
- O
controlled O
synthesis O
of O
sunlight B-APL
- I-APL
driven I-APL
plasmonic I-APL
photocatalysts I-APL
Ag B-MAT
@ I-MAT
AgX I-MAT
( I-MAT
x I-MAT
= I-MAT
Cl I-MAT
, I-MAT
Br I-MAT
) I-MAT
with O
graphene B-MAT
oxide I-MAT
template O


novel O
cubic B-SPL
Ag B-MAT
@ I-MAT
AgX I-MAT
@ I-MAT
graphene I-MAT
( I-MAT
x I-MAT
= I-MAT
Cl I-MAT
, I-MAT
Br I-MAT
) I-MAT
nanocomposites B-DSC
are O
facilely O
manipulated O
by O
means O
of O
a O
graphene B-MAT
oxide I-MAT
( O
GO B-MAT
) O
sheet B-SMT
- I-SMT
assisted I-SMT
assembly I-SMT
protocol O
, O
where O
GO B-MAT
sheets B-DSC
act O
as O
an O
amphiphilic B-PRO
template O
for O
hetero O
- O
growth O
of O
AgX B-MAT
nanoparticles B-DSC
. O


A O
morphology B-PRO
transformation O
of O
AgX B-MAT
nanoparticles B-DSC
from O
sphere O
to O
cube O
- O
like O
shape O
was O
accomplished O
by O
involving O
GO B-MAT
. O


with O
further O
UV B-SMT
irradiation I-SMT
, O
the O
reduction B-SMT
of O
GO B-MAT
to O
graphene B-MAT
and O
the O
generation O
of O
Ag B-MAT
nanocrystals B-DSC
on O
AgX B-MAT
occur O
simultaneously O
. O


we O
have O
demonstrated O
that O
the O
thus O
- O
produced O
Ag B-MAT
@ O
AgX B-MAT
@ O
graphene B-MAT
nanocomposites B-DSC
could O
be O
employed O
as O
stable O
plasmonic B-APL
photocatalysts I-APL
to O
decompose O
acridine O
orange O
as O
a O
typical O
dye O
pollutant O
under O
sunlight O
irradiation O
. O


compared O
with O
the O
bare O
quasi-spherical O
Ag B-MAT
@ O
AgX B-MAT
, O
such O
graphene-interfaced B-MAT
cubic B-SPL
Ag B-MAT
@ O
AgX B-MAT
nanocomposites B-DSC
display O
distinctly O
higher O
adsorptive B-PRO
capacity I-PRO
, O
smaller O
crystal O
size O
and O
reinforced O
electron B-PRO
– I-PRO
hole I-PRO
pair I-PRO
separation I-PRO
owing O
to O
the O
interfacial O
contact O
between O
Ag B-MAT
@ O
AgX B-MAT
and O
graphene B-MAT
sheet B-DSC
components O
, O
resulting O
in O
an O
enhanced O
photocatalytic B-PRO
decomposition I-PRO
performance I-PRO
. O


this O
investigation O
provides O
new O
possibilities O
for O
the O
development O
of O
morphology B-PRO
- O
controlled O
plasmonic B-APL
photocatalysts I-APL
and O
facilitates O
their O
practical O
application O
in O
environmental B-APL
issues I-APL
. O


studies O
of O
fast B-PRO
- I-PRO
ion I-PRO
conducting I-PRO
Li3O12P3V2 B-MAT
coated B-SMT
FeLiO4P B-MAT
via O
sol B-SMT
– I-SMT
gel I-SMT
method O


to O
improve O
the O
electrochemical B-PRO
performance I-PRO
and O
energy B-PRO
density I-PRO
, O
FeLiO4P B-MAT
powders B-DSC
are O
firstly O
coated B-SMT
with O
the O
fast B-PRO
- I-PRO
ion I-PRO
conducting I-PRO
Li3O12P3V2 B-MAT
using O
a O
sol B-SMT
– I-SMT
gel I-SMT
process O
. O


x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
, O
high B-CMT
resolution I-CMT
transmission I-CMT
electron I-CMT
microscopy I-CMT
( O
HRTEM B-CMT
) O
, O
energy B-CMT
dispersive I-CMT
spectroscopy I-CMT
( O
EDS B-CMT
) O
and O
electrochemical B-CMT
measurements I-CMT
are O
used O
to O
study O
the O
structure B-PRO
and O
properties O
of O
the O
materials O
. O


the O
results O
show O
that O
a O
uniform O
coating B-APL
layer B-DSC
of O
Li3O12P3V2 B-MAT
/ O
C B-MAT
exists O
on O
the O
surface B-DSC
of O
FeLiO4P B-MAT
/ O
C B-MAT
particles B-DSC
. O


the O
modified O
sample O
contains O
olivine B-SPL
FeLiO4P B-MAT
and O
monoclinic B-SPL
Li3O12P3V2 B-MAT
phases O
. O


some O
V3+ O
and O
fe2+ O
ions O
are O
doped B-DSC
into O
the O
lattices O
of O
FeLiO4P B-MAT
and O
Li3O12P3V2 B-MAT
separately O
, O
resulting O
in O
the O
lattice B-PRO
contraction I-PRO
and O
the O
formation O
of O
lattice B-PRO
defects I-PRO
. O


compared O
with O
the O
commercial O
FeLiO4P B-MAT
, O
the O
diffusion B-PRO
coefficient I-PRO
of O
lithium B-MAT
ion O
and O
exchange B-PRO
current I-PRO
density I-PRO
of O
modified O
FeLiO4P B-MAT
is O
both O
improved O
by O
one O
order O
of O
magnitude O
. O


electrochemical B-CMT
measurements I-CMT
indicate O
that O
the O
rate B-PRO
capability I-PRO
and O
cycle B-PRO
performance I-PRO
of O
FeLiO4P B-MAT
are O
significantly O
enhanced O
by O
coating B-SMT
with O
Li3O12P3V2 B-MAT
, O
especially O
at O
high O
current O
rates O
. O


At O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
rates O
, O
the O
modified O
FeLiO4P B-MAT
exhibits O
the O
initial O
discharge B-PRO
capacities I-PRO
of O
<nUm> O
and O
<nUm> O
mAhg-1 O
and O
capacity B-PRO
retentions I-PRO
of O
<nUm> O
% O
and O
<nUm> O
% O
after O
190cycles O
, O
respectively O
, O
whereas O
the O
commercial O
FeLiO4P B-MAT
shows O
much O
lower O
capacities B-PRO
of O
<nUm> O
and O
<nUm> O
mAhg-1 O
at O
the O
same O
current O
rates O
. O


kinetics O
and O
mechanism O
of O
molybdenum B-MAT
( I-MAT
VI I-MAT
) I-MAT
oxide I-MAT
reduction B-SMT


kinetics O
of O
the O
reduction B-SMT
of O
MoO3 B-MAT
under O
hydrogen O
, O
propene O
, O
butene-1 O
, O
and O
CO O
has O
been O
studied O
. O


it O
has O
been O
found O
that O
MoO3 B-MAT
morphology B-PRO
and O
the O
addition O
of O
MoO2 B-MAT
and O
metallic B-PRO
platinum B-MAT
affect O
the O
rate O
of O
reduction O
under O
hydrogen O
. O


the O
experimental O
findings O
confirm O
the O
validity O
of O
the O
CAR B-CMT
model I-CMT
proposed O
earlier O
, O
according O
to O
which O
the O
reduction B-SMT
of O
MoO3 B-MAT
to O
MoO2 B-MAT
is O
a O
consecutive O
reaction O
and O
Mo4O11 B-MAT
is O
the O
intermediate O
product O
. O


the O
dissociative O
adsorption O
of O
the O
reductant O
yielding O
atomic O
hydrogen O
is O
the O
rate O
- O
determining O
step O
. O


the O
process O
is O
autocatalytically O
accelerated O
by O
the O
reaction O
product O
, O
MoO2 B-MAT
. O


neutron B-CMT
scattering I-CMT
studies O
of O
nuclear B-PRO
and O
magnetic B-PRO
structures I-PRO
of O
YBa2(Cu1-yZny)3O6+x B-MAT


elastic B-CMT
neutron I-CMT
diffraction I-CMT
experiments O
were O
performed O
on O
YBa2(Cu1-yZny)3O6+x B-MAT
powders B-DSC
, O
nuclear B-PRO
structures I-PRO
have O
been O
refined O
using O
the O
rietveld B-CMT
method I-CMT
on O
powders B-DSC
of O
compositions B-PRO
x O
= O
<nUm> O
and O
y O
ranging O
from O
<nUm> O
to O
<nUm> O
. O


the O
results O
suggest O
a O
solubility O
limit O
of O
zinc B-MAT
in O
the O
coper B-MAT
planes O
at O
y O
≈ O
<nUm> O
and O
zinc B-MAT
may O
start O
to O
substitute O
for O
chain O
coper B-MAT
sites O
for O
higher O
y O
values O
. O


magnetic B-PRO
structure I-PRO
of O
a O
y O
= O
<nUm> O
and O
x O
= O
<nUm> O
powder B-DSC
has O
been O
studied O
by O
neutron B-CMT
elastic I-CMT
diffraction I-CMT
. O


the O
antiferromagnetic B-PRO
structure I-PRO
is O
not O
affected O
by O
non-magnetic B-PRO
zinc B-MAT
atoms O
but O
the O
ordering B-PRO
temperature I-PRO
is O
strongly O
reduced O
. O


atom B-CMT
probe I-CMT
tomography I-CMT
investigation O
of O
heterogeneous O
short B-PRO
- I-PRO
range I-PRO
ordering I-PRO
in O
the O
‘ O
komplex O
’ O
phase O
state O
( O
k-state O
) O
of O
Fe B-MAT
– I-MAT
18Al I-MAT
( I-MAT
at. I-MAT
% I-MAT
) I-MAT


we O
study O
an O
Fe B-MAT
– I-MAT
18Al I-MAT
( I-MAT
at. I-MAT
% I-MAT
) I-MAT
alloy B-DSC
after O
various O
thermal B-SMT
treatments I-SMT
at O
different O
times O
( O
<nUm> O
– O
<nUm> O
h O
) O
and O
temperatures O
( O
<nUm> O
– O
<nUm> O
° O
C O
) O
to O
determine O
the O
nature O
of O
the O
so O
- O
called O
‘ O
komplex O
’ O
phase O
state O
( O
or O
“ O
k-state O
” O
) O
, O
which O
is O
common O
to O
other O
alloy B-DSC
systems O
having O
compositions B-PRO
at O
the O
boundaries O
of O
known O
order B-PRO
- I-PRO
disorder I-PRO
transitions I-PRO
and O
is O
characterised O
by O
heterogeneous O
short-range-ordering B-PRO
( O
SRO B-PRO
) O
. O


this O
has O
been O
done O
by O
direct O
observation O
using O
atom B-CMT
probe I-CMT
tomography I-CMT
( O
APT B-CMT
) O
, O
which O
reveals O
that O
nano-sized B-DSC
, O
ordered O
regions O
/ O
particles B-DSC
do O
not O
exist O
. O


also O
, O
by O
employing O
shell B-CMT
- I-CMT
based I-CMT
analysis I-CMT
of O
the O
three B-PRO
- I-PRO
dimensional I-PRO
atomic I-PRO
positions I-PRO
, O
we O
have O
determined O
chemically B-PRO
sensitive I-PRO
, O
generalised B-PRO
multicomponent I-PRO
short I-PRO
- I-PRO
range I-PRO
order I-PRO
( I-PRO
GM I-PRO
- I-PRO
SRO I-PRO
) I-PRO
parameters I-PRO
, O
which O
are O
compared O
with O
published O
pairwise O
SRO B-PRO
parameters I-PRO
derived O
from O
bulk B-DSC
, O
volume B-CMT
- I-CMT
averaged I-CMT
measurement I-CMT
techniques I-CMT
( O
e.g. O
x-ray B-CMT
and O
neutron B-CMT
scattering I-CMT
, O
mossbauer B-CMT
spectroscopy I-CMT
) O
and O
combined O
ab B-CMT
- I-CMT
initio I-CMT
and O
monte B-CMT
carlo I-CMT
simulations I-CMT
. O


this O
analysis O
procedure O
has O
general O
relevance O
for O
other O
alloy B-DSC
systems O
where O
quantitative O
chemical B-PRO
- I-PRO
structure I-PRO
evaluation O
of O
local B-PRO
atomic I-PRO
environments I-PRO
is O
required O
to O
understand O
ordering O
and O
partial O
ordering O
phenomena O
that O
affect O
physical B-PRO
and O
mechanical B-PRO
properties I-PRO
. O


3D B-DSC
hierarchical O
MnO2 B-MAT
nanorod B-DSC
/ O
welded B-SMT
ag-nanowire-network B-MAT
composites B-DSC
for O
high O
- O
performance O
supercapacitor B-APL
electrodes I-APL


3D B-DSC
MnO2 B-MAT
nanorod B-DSC
/ O
welded B-SMT
ag-nanowire-network B-MAT
supercapacitor B-APL
electrodes I-APL
were O
prepared O
. O


welding B-SMT
treatment I-SMT
of O
the O
Ag B-MAT
nanowire B-DSC
- O
network O
leads O
to O
low O
resistance B-PRO
and O
long O
lifetime B-PRO
. O


galvanostatic O
charge O
/ O
discharge O
( O
GCD O
) O
induces O
an O
ever O
- O
lasting O
morphology B-PRO
changing O
from O
flower B-DSC
- I-DSC
like I-DSC
to O
honeycomb B-DSC
- I-DSC
like I-DSC
for O
MnO2 B-MAT
, O
which O
manifests O
as O
increasing O
specific B-PRO
capacitance I-PRO
to O
<nUm> O
F O
g-1 O
after O
<nUm> O
GCD O
cycles O
. O


study O
of O
the O
role O
of O
oxygen B-PRO
vacancies I-PRO
as O
active B-PRO
sites I-PRO
in O
reduced O
graphene B-MAT
oxide I-MAT
- O
modified O
O2Ti B-MAT


In O
recent O
years O
, O
substantial O
efforts O
have O
been O
devoted O
to O
exploring O
reduced O
graphene B-MAT
oxide I-MAT
/ O
O2Ti B-MAT
( O
RGO B-MAT
/ O
O2Ti B-MAT
) O
composite B-DSC
materials O
; O
however O
, O
there O
is O
still O
a O
paucity O
of O
reports O
on O
the O
construction O
of O
reduced O
graphene B-MAT
oxide I-MAT
/ O
O2Ti B-MAT
with O
oxygen B-PRO
vacancies I-PRO
( O
RGO B-MAT
/ O
TiO2-OV B-MAT
) O
via O
a O
facile B-SMT
two I-SMT
- I-SMT
step I-SMT
wet I-SMT
chemistry I-SMT
approach I-SMT
. O


In O
this O
work O
, O
we O
show O
a O
proof O
- O
of O
- O
concept O
study O
follow O
RGO B-MAT
introduced O
into O
O2Ti B-MAT
with O
oxygen B-PRO
vacancies I-PRO
, O
the O
role O
of O
oxygen B-PRO
vacancies I-PRO
as O
active B-PRO
sites I-PRO
in O
reduced O
graphene B-MAT
oxide I-MAT
- O
modified O
O2Ti B-MAT
. O


the O
photocatalytic B-PRO
performance I-PRO
and O
related O
properties O
of O
blank O
- O
O2Ti B-MAT
, O
blank O
- O
O2Ti B-MAT
with O
oxygen B-PRO
vacancies I-PRO
( O
blank-TiO2-OV B-MAT
) O
, O
RGO B-MAT
/ O
O2Ti B-MAT
, O
and O
RGO B-MAT
/ O
TiO2-OV B-MAT
were O
comparatively O
studied O
. O


it O
was O
found O
that O
due O
to O
the O
incorporation O
of O
RGO B-MAT
, O
RGO B-MAT
/ O
O2Ti B-MAT
and O
RGO B-MAT
/ O
TiO2-OV B-MAT
exhibit O
a O
higher O
photocatalytic B-PRO
performance I-PRO
under O
simulated O
solar O
light O
irradiation O
than O
their O
counterparts O
without O
rGO B-MAT
. O


more O
importantly O
, O
it O
was O
found O
that O
blank O
- O
O2Ti B-MAT
has O
a O
higher O
photocatalytic B-PRO
activity I-PRO
than O
blank-TiO2-OV B-MAT
under O
simulated O
solar O
light O
irradiation O
. O


however O
, O
RGO B-MAT
/ O
O2Ti B-MAT
shows O
a O
lower O
photocatalytic B-PRO
activity I-PRO
than O
rGO B-MAT
/ O
TiO2-OV B-MAT
. O


by O
a O
series O
of O
combined O
techniques O
, O
we O
found O
that O
the O
introduction O
of O
a O
component O
, O
such O
as O
RGO B-MAT
, O
with O
the O
matched O
energy B-PRO
band I-PRO
to O
O2Ti B-MAT
could O
lead O
to O
the O
formation O
of O
a O
long O
- O
lived O
electron B-PRO
- I-PRO
transfer I-PRO
state I-PRO
, O
thus O
prolonging O
the O
lifetime B-PRO
of O
the O
photogenerated B-PRO
charge I-PRO
carriers I-PRO
. O


furthermore O
, O
during O
the O
photocatalytic B-PRO
process O
, O
RGO B-MAT
could O
tune O
the O
role O
of O
oxygen B-PRO
vacancies I-PRO
in O
O2Ti B-MAT
from O
recombination O
centers O
to O
active B-PRO
sites I-PRO
. O


these O
findings O
are O
of O
great O
significance O
for O
the O
design O
of O
effective O
photocatalytic B-APL
materials I-APL
in O
the O
field O
of O
solar B-APL
energy I-APL
conversion I-APL
. O


formation O
of O
patterned B-DSC
PbS B-MAT
and O
SZn B-MAT
films B-DSC
on O
self B-SMT
- I-SMT
assembled I-SMT
monolayers B-DSC


patterned B-DSC
arrays I-DSC
of O
PbS B-MAT
and O
SZn B-MAT
crystals B-DSC
were O
produced O
using O
growth O
templates O
of O
patterned B-DSC
self B-SMT
- I-SMT
assembled I-SMT
monolayers B-DSC
( O
SAMs B-DSC
) O
, O
prepared O
with O
methyl O
and O
carboxylate O
terminated O
thiols O
on O
Au B-MAT
. O


the O
PbS B-MAT
and O
SZn B-MAT
crystals B-DSC
were O
deposited O
using O
chemical B-SMT
solution I-SMT
deposition I-SMT
and O
the O
successive B-SMT
ionic I-SMT
layer I-SMT
adsorption I-SMT
and I-SMT
reaction I-SMT
( O
SILAR B-SMT
) O
methods O
, O
respectively O
. O


crystal B-DSC
growth O
was O
necessarily O
directed O
to O
the O
hydrophilic B-PRO
areas O
of O
the O
substrate B-DSC
. O


characterisation O
of O
the O
films B-DSC
was O
carried O
out O
using O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
and O
surface B-CMT
plasmon I-CMT
microscopy I-CMT
( O
SPM B-CMT
) O
. O


SPM B-CMT
, O
as O
a O
very O
sensitive O
technique O
for O
imaging O
thin B-DSC
films I-DSC
of O
low O
contrast O
, O
was O
demonstrated O
to O
be O
highly O
suited O
to O
the O
analysis O
of O
the O
SZn B-MAT
samples O
. O


A O
comparative O
study O
of O
molybdate B-MAT
/ O
silane O
composite B-DSC
films I-DSC
on O
galvanized B-SMT
steel B-MAT
with O
different O
treatment O
processes O


two O
types O
of O
molybdate B-MAT
/ O
silane O
composite B-DSC
films I-DSC
were O
obtained O
on O
the O
surface B-DSC
of O
hot B-SMT
- I-SMT
dip I-SMT
galvanized I-SMT
steel B-MAT
sheets B-DSC
by O
either O
directly O
immersing O
in O
a O
solution O
containing O
silane O
and O
molybdate B-MAT
as O
additive O
( O
single O
- O
step O
process O
) O
, O
or O
firstly O
immersing O
in O
a O
molybdate B-MAT
solution O
, O
then O
in O
a O
silane O
solution O
( O
two O
- O
step O
process O
) O
. O


the O
chemical B-PRO
compositions I-PRO
and O
microstructures B-PRO
of O
the O
films B-DSC
were O
examined O
by O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
, O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
, O
auger B-CMT
electron I-CMT
spectroscopy I-CMT
( O
AES B-CMT
) O
and O
reflection B-CMT
absorption I-CMT
infrared I-CMT
spectroscopy I-CMT
( O
RAIR B-CMT
) O
. O


the O
corrosion B-PRO
resistances I-PRO
were O
investigated O
by O
electrochemical B-CMT
measurements I-CMT
and O
neutral B-CMT
salt I-CMT
spray I-CMT
( O
NSS B-CMT
) O
test O
. O


the O
results O
showed O
that O
the O
molybdate B-MAT
/ O
silane O
composite B-DSC
film I-DSC
formed O
in O
the O
single O
- O
step O
process O
had O
a O
similar O
double B-PRO
- I-PRO
layer I-PRO
structure I-PRO
as O
that O
obtained O
in O
the O
two O
- O
step O
process O
. O


the O
inner O
layer B-DSC
was O
composed O
mainly O
of O
the O
elements O
O O
, O
Mo B-MAT
, O
Zn B-MAT
, O
and O
P B-MAT
, O
similar O
to O
the O
single O
molybdate B-MAT
film B-DSC
; O
whereas O
the O
outer O
layer B-DSC
was O
composed O
mainly O
of O
the O
elements O
C B-MAT
, O
O O
and O
Si B-MAT
, O
similar O
to O
the O
single O
silane O
film B-DSC
. O


compared O
with O
the O
single O
molybdate B-MAT
or O
silane O
film B-DSC
, O
the O
corrosion B-PRO
current I-PRO
of O
the O
composite B-DSC
films I-DSC
was O
reduced O
and O
the O
impedance B-PRO
of O
the O
films B-DSC
was O
increased O
. O


accordingly O
, O
the O
corrosion B-PRO
resistance I-PRO
of O
the O
composite B-DSC
films I-DSC
was O
remarkably O
enhanced O
to O
a O
level O
which O
was O
comparable O
to O
or O
even O
surpassing O
that O
of O
the O
conventional O
chromate B-MAT
passivation O
film B-DSC
. O


radiation B-PRO
hardness I-PRO
of O
LuAG B-MAT
: I-MAT
Ce I-MAT
and O
LuAG B-MAT
: I-MAT
Pr I-MAT
scintillator B-APL
crystals I-APL


single B-DSC
crystals I-DSC
of O
LuAG B-MAT
: I-MAT
Ce I-MAT
, O
LuAG B-MAT
: I-MAT
Pr I-MAT
and O
un-doped O
LuAG B-MAT
were O
grown O
by O
the O
vertical B-SMT
bridgman I-SMT
method I-SMT
and O
studied O
for O
radiation B-PRO
hardness I-PRO
under O
gamma-rays O
with O
doses O
in O
the O
range O
<nUm> O
– O
105Gy O
( O
60Co O
) O
. O


A O
wide O
absorption B-PRO
band I-PRO
peaking O
at O
around O
<nUm> O
nm O
springs O
up O
in O
all O
three O
types O
of O
crystals B-DSC
after O
the O
irradiations B-SMT
. O


the O
second O
band O
peaking O
at O
around O
<nUm> O
nm O
appears O
in O
both O
LuAG B-MAT
: I-MAT
Pr I-MAT
and O
un-doped O
LuAG B-MAT
. O


compositional O
variations O
have O
been O
done O
to O
reveal O
the O
spectral B-PRO
behavior I-PRO
of O
induced O
color B-PRO
centers I-PRO
in O
more O
detail O
and O
to O
understand O
their O
origin O
. O


similarities O
in O
behavior O
of O
yb2+ O
centers O
in O
as-grown B-DSC
garnets B-SPL
are O
found O
, O
indicating O
that O
radiation B-SMT
induced O
color B-PRO
centers I-PRO
can O
be O
associated O
with O
residual O
trace O
amounts O
of O
Yb B-MAT
present O
in O
the O
raw O
materials O
. O


un-doped O
LuAG B-MAT
and O
LuAG B-MAT
: I-MAT
Ce I-MAT
demonstrate O
moderate O
radiation B-PRO
hardness I-PRO
( O
the O
induced O
absorption B-PRO
coefficients I-PRO
being O
equal O
to O
<nUm> O
– O
<nUm> O
cm-1 O
for O
accumulated O
doses O
of O
<nUm> O
– O
104Gy O
) O
, O
while O
LuAG B-MAT
: I-MAT
Pr I-MAT
is O
less O
radiation B-PRO
hard I-PRO
. O


the O
ways O
to O
improve O
the O
radiation B-PRO
hardness I-PRO
are O
discussed O
. O


magnetic B-PRO
properties I-PRO
of O
the O
ammonolysis B-SMT
product O
of O
a-Fe B-MAT
powder B-DSC
containing O
a O
small O
amount O
of O
aluminum B-MAT


magnetite B-MAT
was O
prepared O
containing O
a O
small O
amount O
of O
aluminum B-MAT
and O
its O
nitride B-MAT
was O
generated O
through O
low O
temperature O
ammonolysis B-SMT
following O
reduction O
under O
hydrogen O
. O


the O
nitrided B-SMT
product O
was O
determined O
by O
XRD B-CMT
to O
be O
a O
mixture O
of O
“ O
a''-Fe16N2 B-MAT
” O
having O
a O
slightly O
deformed O
crystal B-PRO
structure I-PRO
from O
a''-Fe16N2 B-MAT
and O
the O
residual O
a-Fe B-MAT
. O


magnetic B-PRO
coercivity I-PRO
of O
the O
mixture O
was O
decreased O
from O
the O
value O
of O
<nUm> O
mT O
obtained O
for O
the O
nitride B-MAT
product O
made O
without O
aluminum B-MAT
, O
due O
to O
the O
precipitation O
of O
nonmagnetic B-PRO
amorphous B-DSC
alumina B-MAT
in O
the O
low O
temperature O
nitrided B-SMT
bcc B-SPL
( O
Fe1-xAlx B-MAT
) O
with O
x O
≤ O
<nUm> O
. O


the O
aluminum B-MAT
- O
doped B-DSC
nitride B-MAT
product O
in O
which O
the O
“ O
a''-Fe16N2 B-MAT
” O
fraction O
was O
<nUm> O
at O
% O
exhibited O
magnetization B-PRO
at O
1.5T O
of O
approximately O
<nUm> O
am2kg-1 O
at O
room O
temperature O
and O
its O
magnetic B-PRO
coercivity I-PRO
was O
<nUm> O
mT O
. O


evolution O
of O
the O
cold B-SMT
- I-SMT
rolling I-SMT
and O
recrystallization B-PRO
textures I-PRO
in O
AlBCoFeNbNi B-MAT
shape B-APL
memory I-APL
alloy I-APL


the O
evolution O
of O
cold B-SMT
- I-SMT
rolling I-SMT
and O
recrystallization B-PRO
textures I-PRO
in O
the O
newly O
- O
developed O
ferrous B-APL
shape I-APL
memory I-APL
alloy I-APL
( O
AlBCoFeNbNi B-MAT
) O
was O
investigated O
and O
the O
improving O
mechanism O
on O
superelasticy B-PRO
of O
the O
severe B-SMT
cold I-SMT
- I-SMT
rolled I-SMT
alloy B-DSC
was O
discussed O
. O


A O
weaker O
copper B-MAT
rolling B-SMT
texture O
( O
{112}<111>  O
) O
was O
formed O
in O
AlBCoFeNbNi B-MAT
alloy B-DSC
at O
relatively O
low O
rolling B-SMT
reductions O
( O
≤ O
<nUm> O
% O
) O
; O
the O
copper B-MAT
rolling B-SMT
texture O
transformed O
to O
the O
goss O
{110}<001>  O
and O
brass B-MAT
{110}<112>  O
orientations O
through O
twinning B-PRO
and O
dislocation B-PRO
slipping I-PRO
with O
the O
rolling B-SMT
reductions O
of O
<nUm> O
% O
– O
<nUm> O
% O
; O
significantly O
enhanced O
rolling B-SMT
texture O
of O
a O
strong O
brass B-MAT
orientation O
was O
obtained O
with O
the O
rolling B-SMT
reduction O
of O
<nUm> O
% O
. O


the O
<nUm> O
% O
cold B-SMT
- I-SMT
rolled I-SMT
AlBCoFeNbNi B-MAT
alloy B-DSC
after O
solution B-SMT
treatment I-SMT
at O
<nUm> O
° O
C O
for O
<nUm> O
h O
with O
strong O
{hk0}<001>  O
recrystallization B-PRO
texture I-PRO
, O
followed O
by O
aging B-SMT
for O
<nUm> O
h O
at O
<nUm> O
° O
C O
exhibited O
good O
superelasticity B-PRO
of O
<nUm> O
% O
with O
residual B-PRO
strain I-PRO
only O
<nUm> O
% O
, O
and O
the O
tensile B-PRO
strength I-PRO
was O
approximately O
<nUm> O
MPa O
. O


compared O
with O
the O
non-superelasticity B-PRO
in O
the O
as-forged B-DSC
AlBCoFeNbNi B-MAT
alloy B-DSC
, O
the O
considerably O
improving O
superelasticity B-PRO
in O
this O
alloy B-DSC
mainly O
attributes O
to O
the O
formation O
of O
strong O
favorable O
textures O
and O
the O
suppression O
of O
grain B-PRO
boundary I-PRO
precipitation O
. O


periodic B-CMT
hartree I-CMT
– I-CMT
fock I-CMT
and O
hybrid B-CMT
density I-CMT
functional I-CMT
calculations I-CMT
on O
the O
metallic B-PRO
and O
the O
insulating B-PRO
phase O
of O
(EDO-TTF)2PF6 B-MAT


the O
insulating B-PRO
and O
conducting B-PRO
phases O
of O
(EDO-TTF)2PF6 B-MAT
were O
studied O
by O
all B-CMT
electron I-CMT
, I-CMT
periodic I-CMT
hartree I-CMT
– I-CMT
fock I-CMT
and O
hybrid B-CMT
density I-CMT
functional I-CMT
calculations I-CMT
. O


electronic B-PRO
properties I-PRO
, O
such O
as O
the O
electronic B-PRO
band I-PRO
structure I-PRO
, O
the O
density B-PRO
of I-PRO
states I-PRO
and O
the O
fermi B-PRO
surface I-PRO
are O
discussed O
in O
relation O
to O
the O
metal B-PRO
– I-PRO
insulator I-PRO
transition I-PRO
in O
this O
material O
. O


the O
nature O
of O
conduction B-PRO
is O
confirmed O
in O
both O
phases O
from O
their O
band B-PRO
structures I-PRO
and O
density B-PRO
of I-PRO
states I-PRO
. O


the O
hybrid B-CMT
DFT I-CMT
band B-PRO
gaps I-PRO
are O
in O
good O
agreement O
with O
experiment O
. O


interactions O
are O
discussed O
on O
the O
basis O
of O
band B-PRO
dispersion I-PRO
in O
the O
inter-stack O
, O
intra-stack O
and O
inter-sheet O
directions O
. O


we O
discuss O
the O
phase B-PRO
transition I-PRO
in O
terms O
of O
the O
peierls B-PRO
mechanism I-PRO
and O
our O
results O
fully O
support O
this O
view O
. O


the O
preparation O
and O
characterization O
of O
preferred O
( O
<nUm> O
) O
orientation O
aluminum B-MAT
nitride I-MAT
thin B-DSC
films I-DSC
on O
Si B-MAT
( O
<nUm> O
) O
substrates B-DSC
by O
pulsed B-SMT
laser I-SMT
deposition I-SMT


the O
preferred O
( O
<nUm> O
) O
oriented O
aluminum B-MAT
nitride I-MAT
( O
AlN B-MAT
) O
thin B-DSC
films I-DSC
have O
been O
prepared O
by O
pulsed B-SMT
laser I-SMT
deposition I-SMT
on O
p-Si B-MAT
( O
<nUm> O
) O
substrates B-DSC
. O


the O
films B-DSC
were O
characterized O
with O
x-ray B-CMT
diffraction I-CMT
, O
raman B-CMT
spectroscopy I-CMT
, O
fourier B-CMT
transform I-CMT
infrared I-CMT
spectroscopy I-CMT
, O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
and O
atomic B-CMT
force I-CMT
microscope I-CMT
( O
AFM B-CMT
) O
. O


the O
results O
indicate O
that O
the O
AlN B-MAT
thin B-DSC
films I-DSC
are O
well O
- O
crystallized O
when O
laser O
energy O
is O
higher O
than O
<nUm> O
mJ O
/ O
puls O
. O


the O
AFM B-CMT
images O
show O
that O
the O
surface B-PRO
roughness I-PRO
of O
the O
deposited O
AlN B-MAT
thin B-DSC
films I-DSC
gradually O
increases O
with O
increasing O
laser O
energy O
, O
but O
the O
surface B-PRO
morphologies I-PRO
are O
still O
very O
smooth O
. O


the O
crystallinity B-PRO
and O
morphology B-PRO
of O
the O
thin B-DSC
films I-DSC
are O
found O
to O
be O
strongly O
dependent O
on O
the O
laser O
energy O
. O


low O
- O
temperature O
crystal O
growth O
of O
aluminium B-MAT
- O
doped B-DSC
zinc B-MAT
oxide I-MAT
nanoparticles B-DSC
in O
a O
melted O
viscous O
liquid O
of O
alkylammonium O
nitrates O
for O
fabrication O
of O
their O
transparent B-PRO
crystal B-DSC
films I-DSC


we O
fabricated O
conductive B-PRO
Al B-MAT
- O
doped B-DSC
OZn B-MAT
( O
AZO B-MAT
) O
films B-DSC
on O
glass B-MAT
substrates B-DSC
via O
a O
simple O
drop B-SMT
- I-SMT
coating I-SMT
process O
of O
alcoholic O
dispersion O
solutions O
of O
AZO B-MAT
nanoparticles B-DSC
less O
than O
<nUm> O
nm O
in O
size O
, O
which O
were O
prepared O
by O
hydrolysis B-SMT
reactions I-SMT
of O
Zn(NO3)2*6H2O B-MAT
and O
Al(NO3)3*9H2O B-MAT
with O
an O
excess O
amount O
of O
isopropylamine O
. O


after O
heating B-SMT
at O
<nUm> O
° O
C O
to O
completely O
remove O
the O
alcoholic O
solvents O
, O
a O
by O
- O
product O
that O
remained O
, O
isopropylammonium O
nitrate O
, O
was O
melted O
and O
functioned O
as O
a O
low O
- O
temperature O
medium O
for O
the O
AZO B-MAT
nanoparticles B-DSC
. O


even O
in O
the O
low O
- O
temperature O
medium O
at O
<nUm> O
° O
C O
, O
the O
AZO B-MAT
nanoparticles B-DSC
could O
readily O
grow O
up O
to O
~ O
<nUm> O
nm O
, O
based O
on O
ostwald O
ripening O
as O
a O
plausible O
crystal O
growth O
mechanism O
. O


the O
medium O
was O
evaporated O
at O
<nUm> O
° O
C O
, O
and O
a O
highly O
transparent B-PRO
AZO B-MAT
film B-DSC
appeared O
on O
the O
glass B-MAT
with O
a O
transmittance B-PRO
of O
~ O
<nUm> O
% O
in O
the O
visible O
region O
. O


the O
electrical B-PRO
conductivity I-PRO
of O
the O
AZO B-MAT
films B-DSC
was O
improved O
by O
sintering B-SMT
at O
<nUm> O
° O
C O
and O
post-annealing B-SMT
at O
<nUm> O
° O
C O
in O
a O
stream O
of O
a O
mixed O
gas O
of O
N O
and O
H O
. O


the O
resistivity B-PRO
of O
the O
AZO B-MAT
film B-DSC
reached O
<nUm> O
× O
<nUm> O
− O
<nUm> O
Ω O
cm O
in O
an O
Al B-PRO
/ I-PRO
Zn I-PRO
molar I-PRO
ratio I-PRO
of O
<nUm> O
% O
. O


incorporation O
of O
indium B-MAT
and O
gallium B-MAT
in O
atomic B-SMT
layer I-SMT
epitaxy I-SMT
of O
AsGaIn B-MAT
on O
InP B-MAT
substrates B-DSC


the O
incorporation O
of O
indium B-MAT
( O
In B-MAT
) O
and O
gallium B-MAT
( O
Ga B-MAT
) O
group O
III O
elements O
in O
the O
growth O
of O
ternary O
AsGaIn B-MAT
layers B-DSC
by O
atomic B-SMT
layer I-SMT
epitaxy I-SMT
( O
ALE B-SMT
) O
was O
investigated O
using O
various O
growth O
conditions O
. O


by O
dividing O
the O
growth O
rate O
of O
AsGaIn B-MAT
into O
AsIn B-MAT
and O
AsGa B-MAT
components O
, O
it O
was O
found O
that O
the O
incorporation O
of O
In B-MAT
and O
Ga B-MAT
strongly O
depends O
on O
the O
source O
exposure O
time O
, O
H O
purge O
, O
and O
growth O
temperature O
. O


At O
<nUm> O
° O
C O
the O
growth O
rate O
of O
AsIn B-MAT
is O
determined O
by O
the O
metalorganic O
precursor O
supply O
duration O
and O
the O
growth O
rate O
of O
AsGa B-MAT
is O
determined O
by O
the O
AsH3 O
exposure O
duration O
. O


with O
increasing O
H O
purge O
time O
, O
Ga B-MAT
incorporation O
is O
enhanced O
. O


At O
an O
elevated O
temperature O
of O
<nUm> O
° O
C O
the O
incorporation O
of O
both O
In B-MAT
and O
Ga B-MAT
is O
dependent O
on O
metalorganic O
precursor O
exposure O
, O
while O
at O
a O
low O
temperature O
of O
<nUm> O
° O
C O
the O
In B-MAT
and O
Ga B-MAT
incorporation O
is O
limited O
by O
the O
AsH3 O
exposure O
. O


A O
growth O
model O
was O
proposed O
to O
explain O
the O
ALE B-SMT
growth O
of O
a O
ternary O
AsGaIn B-MAT
layer B-DSC
at O
<nUm> O
° O
C O
, O
which O
may O
involve O
metal B-PRO
In B-MAT
and O
CGaH3 O
adsorbates O
as O
the O
In B-MAT
and O
Ga B-MAT
species O
on O
the O
growing O
surface B-DSC
, O
respectively O
. O


structure B-PRO
of O
borate B-MAT
glasses B-DSC
containing O
Tl B-MAT
and O
Ba B-MAT
oxide I-MAT


the O
structures O
of O
two O
borate B-MAT
glasses B-DSC
containing O
heavy O
metals O
B5O8Tl5 B-MAT
and O
B10Ba5O16 B-MAT
, O
were O
investigated O
using O
both O
x-ray B-CMT
and O
neutron B-CMT
diffraction I-CMT
. O


structural B-CMT
models I-CMT
were O
built O
and O
radial B-PRO
distribution I-PRO
functions I-PRO
were O
calculated O
by O
the O
pair B-CMT
function I-CMT
method I-CMT
. O


In O
Tl2OB2O3 B-MAT
glass B-DSC
, O
the O
presence O
of O
3-coordinated O
oxygen O
atom O
proposed O
from O
an O
NMR B-CMT
study O
was O
confirmed O
neither O
by O
this O
analysis O
nor O
by O
raman B-CMT
spectra O
. O


In O
the O
case O
of O
B10Ba5O16 B-MAT
glass B-DSC
, O
the O
calculated O
PDF B-PRO
( O
pair B-PRO
distribution I-PRO
function I-PRO
) O
for O
the O
crystals B-DSC
of O
the O
same O
composition B-PRO
showed O
good O
agreement O
with O
the O
observed O
PDF B-PRO
. O


electrical B-PRO
conduction I-PRO
behavior I-PRO
of O
a-site B-PRO
deficient I-PRO
( O
Y B-MAT
, O
Fe B-MAT
) O
co-doped B-DSC
O3SrTi B-MAT
mixed B-PRO
ionic I-PRO
– I-PRO
electronic I-PRO
conductor I-PRO


mixed B-PRO
ionic I-PRO
– I-PRO
electronic I-PRO
conductors I-PRO
with O
high O
electrical B-PRO
conductivity I-PRO
have O
an O
important O
effect O
on O
modern O
electrochemical B-APL
devices I-APL
. O


As O
a O
mixed B-PRO
ionic I-PRO
– I-PRO
electronic I-PRO
conductor I-PRO
, O
a O
single O
cubic B-SPL
phase O
perovskite B-SPL
(Y0.08Sr0.92)1-xTi0.6Fe0.4O3-d B-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
) I-MAT
was O
fabricated O
at O
<nUm> O
° O
C O
in O
air O
by O
the O
sol B-SMT
– I-SMT
gel I-SMT
method O
. O


the O
total O
electrical B-PRO
conductivity I-PRO
of O
O3SrTi B-MAT
- O
based O
materials O
can O
be O
significantly O
enhanced O
by O
deficiency O
of O
a-site O
and O
acceptor O
- O
doping O
on O
b-site O
. O


In O
the O
paper O
, O
a O
remarkable O
enhancement O
of O
total O
electrical B-PRO
conductivity I-PRO
and O
sinterability B-PRO
of O
a-site B-PRO
deficient I-PRO
( O
Y B-MAT
, O
Fe B-MAT
) O
co-doped B-DSC
O3SrTi B-MAT
is O
reported O
. O


In O
addition O
, O
the O
possible O
charge B-PRO
compensation I-PRO
mechanism I-PRO
of O
a-site B-PRO
deficient I-PRO
Y B-MAT
, O
Fe B-MAT
co-doped B-DSC
O3SrTi B-MAT
can O
be O
described O
as O
(Y0.08Sr0.92)1-xFe0.4Ti4+0.92(1-x)-0.4Ti3+0.08(1-x)O3-(d+0.4 B-MAT
/ I-MAT
<nUm> I-MAT
) I-MAT
or O
(Y0.08Sr0.92)1-xFe0.4Ti4+0.92(1-x)-y1Ti3+0.08(1-x)-y2O3-(d+y1 B-MAT
/ I-MAT
<nUm> I-MAT
) I-MAT
( I-MAT
y1+y2 I-MAT
= I-MAT
<nUm> I-MAT
) I-MAT
. O


high O
pressure O
transformations O
in O
zinc B-MAT
silicates I-MAT


phase O
transformations O
in O
O4SiZn2 B-MAT
and O
O3SiZn B-MAT
have O
been O
investigated O
at O
high O
pressure O
up O
to O
<nUm> O
kbar O
and O
temperature O
to O
<nUm> O
° O
C O
. O


crystal B-PRO
structures I-PRO
of O
high O
pressure O
polymorphs O
have O
been O
studied O
by O
means O
of O
single B-DSC
crystal I-DSC
and O
powder B-DSC
x-ray B-CMT
diffraction I-CMT
analyses O
. O


chemical B-PRO
compositions I-PRO
have O
been O
determined O
by O
electron B-CMT
microprobe I-CMT
and O
wet B-CMT
chemical I-CMT
analyses I-CMT
. O


five O
polymorphs O
have O
been O
identified O
in O
O4SiZn2 B-MAT
, O
designated O
as O
I O
– O
V O
in O
the O
order O
of O
increasing O
pressure O
. O


coordination B-PRO
numbers I-PRO
of O
metal O
ions O
in O
the O
crystal B-PRO
structures I-PRO
of O
O4SiZn2 B-MAT
II O
– O
IV O
are O
four O
, O
the O
same O
as O
those O
in O
O4SiZn2 B-MAT
I O
with O
the O
phenacite B-SPL
structure O
. O


the O
crystal B-PRO
structure I-PRO
of O
O4SiZn2 B-MAT
II O
is O
composed O
of O
an O
approximately O
body B-SPL
- I-SPL
centered I-SPL
tetragonal I-SPL
arrangement O
of O
oxygen O
ions O
. O


O4SiZn2 B-MAT
III O
and O
IV O
are O
suggested O
to O
be O
nonstoichiometric B-DSC
. O


O4SiZn2 B-MAT
V O
, O
appearing O
above O
<nUm> O
kbar O
, O
is O
identified O
to O
be O
of O
the O
modified O
spinel B-SPL
structure O
. O


zn2+ O
ions O
enter O
the O
octahedrally O
coordinated O
sites O
in O
it O
, O
accompanied O
by O
a O
large O
density B-PRO
increase O
. O


No O
olivine B-SPL
- O
like O
structures O
could O
be O
found O
among O
five O
polymorphs O
in O
O4SiZn2 B-MAT
. O


the O
solubility O
limit O
of O
O4SiZn2 B-MAT
in O
Mg2O4Si B-MAT
with O
the O
olivine B-SPL
structure O
is O
determined O
to O
be O
close O
to O
<nUm> O
% O
at O
<nUm> O
kbar O
. O


only O
a O
clinopyroxene B-SPL
form O
of O
O3SiZn B-MAT
is O
found O
to O
be O
stable O
over O
a O
relatively O
wide O
region O
in O
the O
pressure O
- O
temperature O
diagram O
. O


however O
, O
it O
has O
anomalous O
unit B-PRO
cell I-PRO
parameters I-PRO
when O
compared O
with O
more O
conventional O
pyroxenes B-SPL
. O


the O
extreme O
instability O
of O
the O
olivine B-SPL
structure O
in O
O4SiZn2 B-MAT
, O
and O
unusual O
cell B-PRO
parameters I-PRO
in O
O3SiZn B-MAT
pyroxene B-SPL
are O
discussed O
in O
terms O
of O
crystal B-PRO
structures I-PRO
. O


stability B-PRO
of O
the O
modified O
spinel B-SPL
structure O
is O
also O
inferred O
in O
some O
detail O
. O


it O
is O
suggested O
from O
the O
study O
of O
phase O
transformations O
in O
GeO4Zn2 B-MAT
and O
GeO3Zn B-MAT
that O
simple O
analogy O
in O
the O
mode O
of O
the O
high O
- O
pressure O
transformation O
between O
silicates B-MAT
and O
the O
corresponding O
germanates B-MAT
should O
be O
reexamined O
carefully O
. O


the O
growth O
and O
chemisorptive B-PRO
propertles I-PRO
of O
Ag B-MAT
and O
Au B-MAT
monolayers B-DSC
on O
platinum B-MAT
single B-DSC
crystal I-DSC
surfaces I-DSC
: O
an O
AES B-CMT
, O
TDS B-CMT
and O
LEED B-CMT
study O


the O
growth O
and O
chemisorptive B-PRO
properties I-PRO
of O
monolayer B-DSC
films I-DSC
of O
Ag B-MAT
and O
Au B-MAT
deposited O
on O
both O
the O
Pt(111) B-MAT
and O
the O
stepped O
Pt(553) B-MAT
surfaces B-DSC
were O
studied O
using O
auger B-CMT
electron I-CMT
spectroscopy I-CMT
( O
AES B-CMT
) O
, O
thermal B-CMT
desorption I-CMT
spectroscopy I-CMT
( O
TDS B-CMT
) O
, O
and O
low B-CMT
energy I-CMT
electron I-CMT
diffraction I-CMT
( O
LEED B-CMT
) O
. O


AES B-CMT
studies O
indicate O
that O
the O
growth O
of O
Au B-MAT
on O
Pt(111) B-MAT
and O
Pt(553) B-MAT
and O
Ag B-MAT
on O
Pt(111) B-MAT
proceeds O
via O
a O
stranski O
- O
krastanov O
mechanism O
, O
whereas O
the O
growth O
of O
Ag B-MAT
on O
the O
Pt(553) B-MAT
surface B-DSC
follows O
a O
volmer O
- O
weber O
mechanism O
. O


Au B-MAT
dissolves O
into O
the O
Pt B-MAT
crystal B-DSC
bulk I-DSC
at O
temperatures O
> O
<nUm> O
K O
, O
whereas O
Ag B-MAT
desorbs O
at O
temperatures O
> O
<nUm> O
K. O
TDS B-CMT
studies O
of O
Ag B-MAT
- O
covered O
Pt B-MAT
surfaces B-DSC
indicate O
that O
the O
AgPt B-PRO
bond I-PRO
( O
<nUm> O
kJ O
mol-1 O
) O
is O
∼ O
<nUm> O
kJ O
mol-1 O
stronger O
than O
the O
AgAg B-PRO
bond I-PRO
( O
<nUm> O
kJ O
mol-1 O
) O
. O


on O
the O
Pt(553) B-MAT
surface B-DSC
the O
Au B-MAT
atoms O
are O
uniformly O
distributed O
between O
terrace O
and O
step O
sites O
, O
but O
Ag B-MAT
preferentially O
segregates O
to O
the O
terraces O
. O


the O
decrease O
in O
CO O
adsorption O
on O
the O
Pt B-MAT
crystal B-DSC
surfaces I-DSC
is O
in O
direct O
proportion O
to O
the O
Ag B-MAT
or O
Au B-MAT
coverage O
. O


No O
CO O
adsorption O
could O
be O
detected O
for O
Ag B-MAT
or O
Au B-MAT
coverages O
above O
one O
monolayer O
at O
<nUm> O
K O
and O
<nUm> O
− O
<nUm> O
Torr O
. O


the O
heat B-PRO
of I-PRO
adsorption I-PRO
of O
CO O
on O
Pt B-MAT
is O
unaltered O
by O
the O
presence O
of O
Ag B-MAT
or O
Au B-MAT
. O


evidence O
of O
existence O
of O
metastable B-PRO
Fe12O19Sr B-MAT
nanoparticles B-DSC


the O
existence O
of O
metastable B-PRO
hexaferrite B-MAT
is O
reported O
. O


synthesis O
of O
strontium B-MAT
hexaferrite I-MAT
, O
Fe12O19Sr B-MAT
, O
at O
<nUm> O
° O
C O
was O
realized O
under O
controlled O
oxygen O
atmosphere O
. O


such O
technique O
allows O
obtaining O
of O
Fe12O19Sr B-MAT
at O
lower O
temperatures O
than O
those O
by O
traditional O
methods O
( O
above O
<nUm> O
° O
C O
) O
. O


phase O
transformation O
occurred O
during O
a O
measurement O
of O
magnetization B-PRO
vs. O
temperature O
( O
heating B-SMT
up O
to O
<nUm> O
° O
C O
) O
. O


the O
heat B-SMT
treatment I-SMT
induces O
a O
change O
from O
Fe12O19Sr B-MAT
to O
g-Fe2O3 B-MAT
( O
as O
the O
main O
phase O
) O
, O
and O
Fe50O137Sr50 B-MAT
to O
Fe2O5Sr2 B-MAT
. O


together O
with O
these O
phase O
transformations O
, O
an O
increment O
in O
the O
amount O
of O
CO3Sr B-MAT
is O
detected O
. O


magnetic B-PRO
study O
of O
the O
samples O
, O
before O
and O
after O
the O
heating B-SMT
, O
supports O
the O
structural B-CMT
analysis I-CMT
conclusions O
. O


cationic B-PRO
distribution I-PRO
in O
copper B-MAT
- I-MAT
cobalt I-MAT
CuxCo3-xO4 I-MAT
spinels B-SPL
prepared O
by O
low B-SMT
- I-SMT
temperature I-SMT
decomposition I-SMT
of I-SMT
nitrates I-SMT


crystal B-PRO
structures I-PRO
of O
CuxCo3-xO4 B-MAT
spinels B-SPL
with O
x O
= O
<nUm> O
and O
<nUm> O
, O
prepared O
by O
thermal B-SMT
decomposition I-SMT
of I-SMT
mixed I-SMT
nitrates I-SMT
at O
low O
temperatures O
, O
have O
been O
refined O
from O
x-ray B-CMT
powder I-CMT
diffraction I-CMT
data O
. O


the O
cationic B-PRO
distribution I-PRO
of O
copper B-MAT
and O
cobalt B-MAT
ions O
over O
the O
A- O
and O
B- O
sites O
of O
the O
lattice O
corresponds O
to O
a O
partially O
inverse O
spinels B-SPL
. O


crystallization O
process O
of O
a O
rapidly B-SMT
quenched I-SMT
Fe B-MAT
– I-MAT
B I-MAT
– I-MAT
Nd I-MAT
nanocomposite B-DSC
magnet B-APL


superior O
magnetic B-PRO
properties I-PRO
of O
Nd B-MAT
– I-MAT
Fe I-MAT
– I-MAT
B I-MAT
nanocomposite B-DSC
magnets B-APL
rely O
on O
their O
nanoscaled B-DSC
structure B-PRO
composed O
of O
hard B-PRO
- I-PRO
magnetic I-PRO
BFe14Nd2 B-MAT
and O
soft B-PRO
- I-PRO
magnetic I-PRO
BFe3 B-MAT
phases O
, O
which O
results O
from O
a O
glassy B-DSC
state O
upon O
subsequent O
annealing B-SMT
. O


it O
has O
been O
known O
from O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
analysis O
that O
for O
this O
system O
, O
an O
addition O
of O
Cr B-MAT
is O
critical O
to O
control O
the O
crystallization O
route O
to O
produce O
the O
desired O
mixture O
of O
BFe14Nd2 B-MAT
and O
BFe3 B-MAT
phases O
. O


we O
have O
investigated O
the O
partitioning O
of O
Cr B-MAT
in O
a O
B36Cr5Fe149Nd10 B-MAT
alloy B-DSC
throughout O
its O
crystallization O
process O
using O
atom B-CMT
probe I-CMT
field I-CMT
ion I-CMT
microscopy I-CMT
( O
APFIM B-CMT
) O
. O


Cr B-MAT
is O
found O
to O
be O
enriched O
in O
BFe3 B-MAT
, O
up O
to O
<nUm> O
at. O
% O
, O
and O
the O
Cr B-PRO
concentration I-PRO
in O
BFe14Nd2 B-MAT
is O
determined O
to O
be O
<nUm> O
at. O
% O
. O


together O
with O
the O
results O
of O
XRD B-CMT
, O
we O
have O
discussed O
the O
effect O
of O
Cr B-MAT
, O
based O
on O
the O
idea O
that O
Cr B-MAT
alters O
the O
phase O
decomposition O
route O
by O
stabilizing O
the O
BFe3 B-MAT
phase O
. O


enhanced O
emission O
of O
er3+ O
from O
alternately O
Er B-MAT
doped B-DSC
Si B-MAT
- O
rich O
Al2O3 B-MAT
multilayer B-DSC
film I-DSC
with O
Si B-MAT
nanocrystals B-DSC
as O
broadband B-APL
sensitizers I-APL


alternately O
Er B-MAT
doped B-DSC
Si B-MAT
- O
rich O
Al2O3 B-MAT
( O
Er B-MAT
: I-MAT
SRA I-MAT
) O
multilayer B-DSC
film I-DSC
, O
consisting O
of O
alternate O
Er B-MAT
– O
Si B-MAT
- O
codoped B-DSC
Al2O3 B-MAT
( O
Er B-MAT
: I-MAT
Si I-MAT
: I-MAT
Al2O3 I-MAT
) O
and O
Si B-MAT
- O
doped B-DSC
Al2O3 B-MAT
( O
Si B-MAT
: I-MAT
Al2O3 I-MAT
) O
sublayers B-DSC
, O
has O
been O
synthesized O
by O
co-sputtering B-SMT
from O
separated O
Er B-MAT
, O
Si B-MAT
, O
and O
Al2O3 B-MAT
targets O
. O


the O
dependence O
of O
er3+ O
related O
photoluminescence B-CMT
( O
PL B-CMT
) O
properties O
on O
annealing B-SMT
temperatures O
over O
<nUm> O
– O
<nUm> O
° O
C O
was O
studied O
. O


the O
maximum O
intensity O
of O
er3+ O
PL B-CMT
, O
about O
<nUm> O
times O
higher O
than O
that O
of O
the O
monolayer B-DSC
film I-DSC
, O
was O
obtained O
from O
the O
multilayer B-DSC
film I-DSC
annealed B-SMT
at O
<nUm> O
° O
C O
. O


the O
enhancement O
of O
er3+ O
PL B-CMT
intensity O
is O
attributed O
to O
the O
energy O
transfer O
from O
the O
silicon B-MAT
nanocrystals B-DSC
in O
the O
Si B-MAT
: I-MAT
Al2O3 I-MAT
sublayers B-DSC
to O
the O
neighboring O
er3+ O
ions O
in O
the O
Er B-MAT
: I-MAT
Si I-MAT
: I-MAT
Al2O3 I-MAT
sublayers B-DSC
. O


the O
PL B-CMT
intensity O
exhibits O
a O
nonmonotonic O
temperature O
dependence O
: O
with O
increasing O
temperature O
, O
the O
integrated O
intensity O
almost O
remains O
constant O
from O
<nUm> O
to O
50K O
, O
then O
reaches O
maximum O
at O
225K O
, O
and O
slightly O
increases O
again O
at O
higher O
temperatures O
. O


meanwhile O
, O
the O
PL B-CMT
integrated O
intensity O
at O
room O
temperature O
is O
about O
<nUm> O
% O
higher O
than O
that O
at O
14K O
. O


research O
and O
development O
of O
polycrystalline B-DSC
diamond B-MAT
woodworking B-APL
tools I-APL


polycrystalline B-DSC
diamond B-MAT
( O
PCD B-MAT
) O
is O
a O
kind O
of O
high O
performance O
synthetic O
ultrahard B-PRO
material O
. O


due O
to O
its O
hardness B-PRO
, O
abrasion B-PRO
resistance I-PRO
, O
thermal B-PRO
conductivity I-PRO
and O
many O
other O
outstanding O
properties O
, O
PCD B-MAT
is O
widely O
used O
in O
many O
kinds O
of O
industry O
. O


with O
the O
growth O
of O
the O
worldwide O
population O
the O
consumption O
of O
wood O
- O
based O
products O
is O
increasing O
significantly O
. O


the O
application O
of O
PCD B-MAT
in O
the O
woodworking B-APL
industry I-APL
has O
both O
benefited O
this O
industry O
and O
extended O
the O
application O
range O
of O
PCD B-MAT
. O


an O
overview O
on O
the O
current O
status O
of O
PCD B-MAT
tools B-APL
is O
given O
in O
this O
paper O
, O
with O
a O
special O
focus O
on O
application O
in O
the O
woodworking B-APL
industry I-APL
. O


the O
excellent O
cutting B-PRO
performance I-PRO
of O
PCD B-MAT
woodworking B-APL
tools I-APL
is O
described O
. O


based O
on O
the O
research O
contents O
, O
the O
investigation O
direction O
and O
future O
development O
of O
PCD B-MAT
woodworking B-APL
tools I-APL
have O
been O
reviewed O
. O


this O
paper O
points O
out O
that O
PCD B-MAT
tools B-APL
will O
have O
a O
wide O
application O
in O
woodworking B-APL
industry I-APL
during O
the O
21st O
century O
. O


formation O
of O
nitrides B-MAT
at O
the O
surface B-DSC
of O
U B-MAT
– I-MAT
Zr I-MAT
alloys B-DSC


the O
phase B-PRO
behavior I-PRO
of O
ternary O
system O
U B-MAT
– I-MAT
Zr I-MAT
– I-MAT
N I-MAT
was O
investigated O
by O
surface B-DSC
analysis I-DSC
of O
U B-MAT
– I-MAT
Zr I-MAT
alloys B-DSC
reacted O
with O
nitrogen O
gas O
by O
auger B-CMT
electron I-CMT
spectroscopy I-CMT
( O
AES B-CMT
) O
and O
electron B-CMT
- I-CMT
probe I-CMT
microanalysis I-CMT
( O
EPMA B-CMT
) O
. O


U B-MAT
– I-MAT
<nUm> I-MAT
, I-MAT
– I-MAT
<nUm> I-MAT
and I-MAT
– I-MAT
<nUm> I-MAT
at. I-MAT
% I-MAT
Zr I-MAT
alloys B-DSC
were O
reacted O
with O
nitrogen O
at O
<nUm> O
kPa O
and O
<nUm> O
K O
, O
and O
the O
reaction O
layers O
were O
analyzed O
. O


the O
reaction O
layers O
formed O
at O
the O
alloy B-DSC
surfaces I-DSC
were O
(U,Zr)N B-MAT
/ O
NZr B-MAT
/ O
aZr B-MAT
/ O
alloy B-DSC
matrix I-DSC
. O


the O
compositions B-PRO
of O
the O
(U,Zr)N B-MAT
mononitride I-MAT
phases O
changed O
from O
those O
of O
the O
matrix B-DSC
alloys I-DSC
to O
NZr B-MAT
continuously O
. O


the O
thicknesses O
of O
the O
(U,Zr)N B-MAT
layers B-DSC
were O
below O
about O
<nUm> O
mm O
and O
were O
larger O
for O
u-rich O
alloy B-DSC
. O


1H B-CMT
NMR I-CMT
study O
of O
proton B-PRO
dynamics I-PRO
in O
[ B-MAT
( I-MAT
H4N I-MAT
) I-MAT
1- I-MAT
x I-MAT
Rb I-MAT
x I-MAT
]3H(SO4)2 I-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
) I-MAT


proton B-PRO
dynamics I-PRO
in O
[(NH4)1-xRbx]3H(SO4)2 B-MAT
with I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
has O
been O
studied O
by O
means O
of O
1H B-CMT
solid I-CMT
- I-CMT
state I-CMT
NMR I-CMT
. O


the O
1H B-CMT
magic-angle-spinning I-CMT
( I-CMT
MAS I-CMT
) I-CMT
NMR I-CMT
spectra O
were O
traced O
at O
room O
temperature O
( O
RT O
) O
, O
and O
1H B-CMT
static I-CMT
NMR I-CMT
spectra O
and O
spin B-PRO
- I-PRO
lattice I-PRO
relaxation I-PRO
times I-PRO
( O
T1 B-PRO
) O
were O
measured O
in O
the O
range O
of O
<nUm> O
– O
<nUm> O
K O
. O


the O
1H B-PRO
chemical I-PRO
shift I-PRO
for O
the O
acidic O
proton O
( O
<nUm> O
ppm O
) O
indicates O
hydrogen O
bonds O
of O
intermediate O
strength O
between O
H13N3O8S2 B-MAT
and O
HO8Rb3S2 B-MAT
. O


In O
phase O
II O
, O
a O
very O
fast O
local O
and O
anisotropic O
motion O
of O
the O
acidic O
protons O
takes O
place O
and O
NH4+ O
ions O
start O
to O
diffuse O
translationally O
just O
below O
the O
transition B-PRO
temperature I-PRO
. O


In O
phase O
I O
, O
both O
NH4+ O
ions O
and O
the O
acidic O
protons O
diffuse O
translationally O
. O


the O
acidic O
protons O
diffuse O
with O
an O
activation B-PRO
energy I-PRO
of O
<nUm> O
kJ O
mol-1 O
and O
the O
inverse O
of O
a O
frequency B-PRO
factor I-PRO
of O
<nUm> O
× O
<nUm> O
− O
<nUm> O
s O
. O


No O
proton O
exchange O
is O
observed O
between O
NH4+ O
ions O
and O
the O
acidic O
protons O
in O
both O
phases O
. O


the O
oxidation B-SMT
of O
nickel B-MAT
— I-MAT
tungsten I-MAT
alloys B-DSC


the O
oxidation B-PRO
behaviour I-PRO
of O
NiW B-MAT
alloys B-DSC
and O
NiWCr B-MAT
alloys B-DSC
containing O
up O
to O
<nUm> O
wt O
% O
W B-MAT
has O
been O
studied O
in O
the O
temperature O
range O
<nUm> O
– O
<nUm> O
° O
C O
. O


the O
parabolic B-PRO
rate I-PRO
constant I-PRO
for O
oxidation B-SMT
increases O
with O
increasing O
tungsten B-MAT
content O
in O
the O
alloy B-DSC
. O


addition O
of O
<nUm> O
or O
<nUm> O
% O
Cr B-MAT
causes O
a O
significant O
reduction O
in O
the O
oxidation B-PRO
rate I-PRO
. O


In O
the O
Ni B-MAT
— I-MAT
7*5W I-MAT
alloy B-DSC
, O
spherical O
internal O
oxide B-MAT
particle B-DSC
of O
O3W B-MAT
are O
formed O
within O
the O
alloy B-DSC
, O
whereas O
as O
the O
tungsten B-MAT
content O
is O
increased O
the O
tendency O
to O
internal O
oxidation B-SMT
diminishes O
but O
the O
alloy B-DSC
/ O
scale O
interface B-DSC
develops O
a O
highly O
irregular O
morphology B-PRO
. O


the O
roughened O
alloy B-DSC
/ O
scale O
interface B-DSC
is O
less O
marked O
at O
the O
higher O
oxidation B-SMT
temperatures O
, O
and O
also O
when O
chromium B-MAT
is O
present O
in O
the O
alloy B-DSC
. O


the O
morphology B-PRO
of O
the O
interface B-DSC
is O
probably O
related O
to O
the O
relatively O
low O
interdiffusion B-PRO
coefficient I-PRO
in O
NiW B-MAT
alloys B-DSC
. O


x-ray B-CMT
absorption I-CMT
study O
of O
titanium B-MAT
coordination O
in O
sol B-SMT
- I-SMT
gel I-SMT
derived O
O2Ti B-MAT


sol B-SMT
- I-SMT
gel I-SMT
derived O
O2Ti B-MAT
in O
amorphous B-DSC
form O
is O
investigated O
by O
x-ray B-CMT
absorption I-CMT
spectroscopy I-CMT
. O


anatase B-SPL
micro-crystallites B-DSC
and O
residuals O
of O
the O
alkoxide O
precursor O
are O
found O
in O
the O
glass B-DSC
and O
no O
evidence O
of O
tetrahedrally O
coordinated O
titanium B-MAT
may O
be O
inferred O
from O
the O
XANES B-CMT
spectra O
. O


pure B-DSC
crystalline I-DSC
phases O
are O
obtained O
by O
thermal B-SMT
treatments I-SMT
. O


tantalum B-MAT
nitride I-MAT
films B-DSC
integrated O
with O
transparent B-PRO
conductive I-PRO
oxide B-MAT
substrates B-DSC
via O
atomic B-SMT
layer I-SMT
deposition I-SMT
for O
photoelectrochemical B-APL
water I-APL
splitting I-APL


tantalum B-MAT
nitride I-MAT
, O
N5Ta3 B-MAT
, O
is O
one O
of O
the O
most O
promising O
materials O
for O
solar B-APL
energy I-APL
driven I-APL
water I-APL
oxidation I-APL
. O


one O
significant O
challenge O
of O
this O
material O
is O
the O
high O
temperature O
and O
long O
duration O
of O
ammonolysis B-SMT
previously O
required O
to O
synthesize O
it O
, O
which O
has O
so O
far O
prevented O
the O
use O
of O
transparent B-PRO
conductive I-PRO
oxide B-MAT
( O
TCO B-PRO
) O
substrates B-DSC
to O
be O
used O
which O
would O
allow O
sub-bandgap O
light O
to O
be O
transmitted O
to O
a O
photocathode B-APL
. O


here O
, O
we O
overcome O
this O
challenge O
by O
utilizing O
atomic B-SMT
layer I-SMT
deposition I-SMT
( O
ALD B-SMT
) O
to O
directly O
deposit O
tantalum B-MAT
oxynitride I-MAT
thin B-DSC
films I-DSC
, O
which O
can O
be O
fully O
converted O
to O
Ta3N5via B-MAT
ammonolysis B-SMT
at O
<nUm> O
° O
C O
for O
<nUm> O
minutes O
. O


this O
synthesis O
employs O
far O
more O
moderate O
conditions O
than O
previous O
reports O
of O
efficient O
N5Ta3 B-MAT
photoanodes B-APL
. O


further O
, O
we O
report O
the O
first O
ALD B-SMT
of O
Ta B-MAT
- O
doped B-DSC
O2Ti B-MAT
which O
we O
show O
is O
a O
viable O
TCO B-PRO
material O
that O
is O
stable B-PRO
under O
the O
relatively O
mild O
ammonolysis B-SMT
conditions O
employed O
. O


As O
a O
result O
, O
we O
report O
the O
first O
example O
of O
a O
N5Ta3 B-MAT
electrode B-APL
deposited O
on O
a O
TCO B-PRO
substrate B-DSC
, O
and O
the O
photoelectrochemical B-PRO
behavior I-PRO
. O


these O
results O
open O
the O
door O
to O
achieve O
efficient O
overall O
water B-APL
splitting I-APL
using O
a O
N5Ta3 B-MAT
photoanode B-APL
. O


new O
oxypnictide O
superconductors B-PRO
: O
PrOFe1- B-MAT
x I-MAT
Co I-MAT
x I-MAT
As I-MAT


oxypnictides O
of O
the O
type O
PrOFe1-xCoxAs B-MAT
( I-MAT
x I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT
were O
synthesized O
for O
the O
first O
time O
by O
the O
sealed B-SMT
tube I-SMT
method I-SMT
. O


all O
the O
compounds O
were O
found O
to O
be O
monophasic B-PRO
and O
crystallize O
in O
the O
tetragonal B-SPL
AsCuSiZr B-MAT
type O
structure O
( O
space O
group O
= O
P4 B-SPL
/ I-SPL
nmm I-SPL
) O
and O
the O
lattice B-PRO
parameters I-PRO
( O
a B-PRO
and O
c B-PRO
) O
decrease O
with O
increase O
in O
cobalt B-MAT
content O
. O


mossbauer B-CMT
measurements I-CMT
of O
the O
compounds O
indicate O
low B-PRO
spin I-PRO
fe2+ O
in O
tetrahedral O
coordination O
. O


resistivity B-PRO
and O
magnetization B-PRO
studies O
reveal O
superconducting B-PRO
transitions I-PRO
in O
compounds O
with O
‘ O
x O
’ O
= O
<nUm> O
, O
<nUm> O
and O
<nUm> O
, O
with O
maximum O
transition B-PRO
temperature I-PRO
( O
Tc B-PRO
) O
at O
∼ O
<nUm> O
K O
in O
the O
compound O
with O
‘ O
x O
’ O
= O
<nUm> O
. O


the O
variation O
of O
resistivity B-PRO
with O
temperature O
under O
different O
magnetic O
field O
has O
been O
studied O
to O
estimate O
the O
upper B-PRO
critical I-PRO
field I-PRO
( O
hc2 B-PRO
) O
( O
∼ O
<nUm> O
T O
for O
the O
‘ O
x O
’ O
= O
<nUm> O
composition O
) O
. O


the O
seebeck B-PRO
and O
hall B-PRO
coefficient I-PRO
( O
RH B-PRO
) O
suggests O
electron O
type O
charge O
carriers O
in O
these O
compound O
and O
the O
charge B-PRO
carrier I-PRO
density I-PRO
increases O
with O
increase O
in O
co-doping B-DSC
. O


the O
coexistence O
of O
cluster B-PRO
glass I-PRO
behavior I-PRO
and O
long O
- O
range O
ferromagnetic B-PRO
ordering I-PRO
in O
La14Mn14NaO60Sr5Ti6 B-MAT
manganite I-MAT


the O
electron O
- O
doped B-DSC
La14Mn14NaO60Sr5Ti6 B-MAT
( O
LSNMTi0.3 B-MAT
) O
sample O
was O
synthesized O
by O
a O
conventional O
solid B-SMT
- I-SMT
state I-SMT
reaction I-SMT
. O


rietveld B-CMT
analysis I-CMT
of O
the O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
data O
showed O
that O
the O
compound O
crystallized O
in O
the O
space O
group O
r B-SPL
<nUm> I-SPL
-c I-SPL
. O


magnetic B-CMT
characterization I-CMT
present O
a O
signature O
of O
a O
coexisting O
AFM B-PRO
– O
FM B-PRO
ordering I-PRO
and O
a O
cluster B-PRO
- I-PRO
glass I-PRO
phase I-PRO
. O


the O
M2 B-CMT
vs I-CMT
. I-CMT


H B-CMT
/ I-CMT
m I-CMT
curves I-CMT
prove O
that O
the O
samples O
exhibit O
a O
second O
- O
order O
magnetic B-PRO
phase I-PRO
transition I-PRO
and O
the O
critical O
properties O
near O
the O
ferromagnetic B-PRO
– I-PRO
paramagnetic I-PRO
phase I-PRO
transition I-PRO
temperature I-PRO
have O
been O
analyzed O
from O
data O
of O
the O
static B-CMT
magnetization I-CMT
measurements I-CMT
for O
the O
sample O
, O
through O
various O
techniques O
such O
as O
the O
modified O
arrott B-CMT
plot I-CMT
and O
the O
critical B-CMT
isotherm I-CMT
analysis I-CMT
. O


the O
critical B-PRO
exponent I-PRO
values O
estimated O
from O
the O
isothermal B-CMT
magnetization I-CMT
measurements I-CMT
are O
found O
to O
be O
consistent O
and O
comparable O
to O
those O
predicted O
by O
the O
long B-CMT
- I-CMT
range I-CMT
mean I-CMT
- I-CMT
field I-CMT
theory I-CMT
. O


structural B-PRO
and O
optical B-CMT
studies I-CMT
of O
SZn B-MAT
nanocrystal B-DSC
films I-DSC
prepared O
by O
sulfosalicylic B-SMT
acid I-SMT
(C7H6O6S)-assisted I-SMT
galvanostatic I-SMT
deposition I-SMT
with O
subsequent O
annealing B-SMT


zinc B-MAT
sulfide I-MAT
( O
SZn B-MAT
) O
semiconductor B-PRO
nanocrystal B-DSC
films I-DSC
have O
been O
prepared O
on O
indium B-MAT
tin I-MAT
oxide I-MAT
coated B-SMT
glass B-MAT
substrates B-DSC
by O
sulfosalicylic B-SMT
acid I-SMT
(C7H6O6S)-assisted I-SMT
galvanostatic I-SMT
deposition I-SMT
with O
subsequent O
annealing B-SMT
. O


the O
deposition O
was O
performed O
at O
10mAcm-2 O
in O
acidic O
electrolytes O
containing O
<nUm> O
– O
<nUm> O
mM O
C4H6O4Zn O
, O
<nUm> O
mM O
Na2O3S2 B-MAT
, O
<nUm> O
mM O
ClLi B-MAT
, O
<nUm> O
mM O
Na2O3S B-MAT
, O
and O
<nUm> O
or O
<nUm> O
mM O
C7H6O6S O
. O


results O
show O
that O
the O
presence O
of O
C7H6O6S O
can O
suppress O
the O
precipitation O
of O
Zn B-MAT
and O
S B-MAT
impurity O
phases O
during O
the O
SZn B-MAT
deposition O
process O
. O


As O
the O
[C7H6O6S] O
= O
<nUm> O
mM O
and O
[Zn2+] O
= O
<nUm> O
mM O
, O
the O
deposited O
SZn B-MAT
film B-DSC
exhibits O
only O
hexagonal B-SPL
structure O
with O
an O
ideal O
Zn B-PRO
/ I-PRO
S I-PRO
atomic I-PRO
ratio I-PRO
of O
<nUm> O
and O
a O
close O
- O
packed O
granular O
morphology B-PRO
. O


but O
its O
band B-PRO
gap I-PRO
about O
<nUm> O
eV O
is O
narrower O
than O
the O
common O
value O
of O
SZn B-MAT
, O
probably O
due O
to O
the O
existence O
of O
some O
spurious O
acetate O
species O
and O
defect B-PRO
states I-PRO
. O


by O
annealing B-SMT
the O
film B-DSC
at O
<nUm> O
° O
C O
for O
<nUm> O
min O
, O
its O
band B-PRO
gap I-PRO
increased O
up O
to O
<nUm> O
eV O
, O
despite O
that O
its O
crystalline B-PRO
phase I-PRO
transformed O
into O
cubic B-SPL
structure B-PRO
which O
usually O
shows O
the O
narrower O
band B-PRO
gap I-PRO
than O
hexagonal B-SPL
SZn B-MAT
. O


the O
significant O
band B-PRO
gap I-PRO
widening O
could O
be O
ascribed O
to O
the O
degradation O
of O
spurious O
acetate O
species O
and O
the O
reduction O
of O
various O
possible O
defect B-PRO
states I-PRO
in O
the O
annealing B-SMT
process O
. O


A O
raman B-CMT
and O
NMR B-CMT
study O
of O
F6KSb B-MAT


the O
19F B-CMT
spin I-CMT
- I-CMT
lattice I-CMT
relaxation I-CMT
results O
in O
the O
laboratory O
frame O
show O
that O
upon O
cooling B-SMT
from O
the O
tetragonal B-SPL
phase O
, O
KSbF6(I) B-MAT
, O
the O
transition O
to O
the O
cubic B-SPL
phase O
, O
KSbF6(II) B-MAT
, O
occurs O
over O
a O
wide O
temperature O
range O
( O
~ O
<nUm> O
K O
) O
in O
which O
the O
two O
phases O
co-exist O
. O


the O
raman B-CMT
results O
using O
powdered B-DSC
samples O
agree O
with O
this O
observation O
but O
co-existence O
of O
phases O
has O
of O
course O
not O
been O
observed O
in O
single B-DSC
crystal I-DSC
raman B-CMT
measurements O
. O


upon O
rapid B-SMT
cooling I-SMT
of O
the O
powdered B-DSC
samples O
in O
the O
raman B-CMT
studies O
the O
tetragonal B-SPL
phase O
could O
be O
super-cooled B-SMT
. O


upon O
heating B-SMT
from O
the O
cubic B-SPL
phase O
, O
the O
transition O
was O
observed O
at O
<nUm> O
± O
<nUm> O
K O
in O
all O
the O
measurements O
. O


the O
raman B-CMT
spectra O
of O
KSbF6(I) B-MAT
give O
no O
evidence O
of O
a O
non-centrosymmetric O
structure B-PRO
but O
it O
is O
shown O
that O
this O
is O
so O
because O
the O
Sb B-MAT
- O
atoms O
are O
only O
very O
slightly O
displaced O
from O
centro O
- O
symmetrical O
positions O
. O


19F B-CMT
second I-CMT
moment I-CMT
results O
are O
in O
agreement O
with O
a O
model O
in O
which O
the O
SbF-6 B-MAT
- O
octahedra O
are O
stationary O
below O
<nUm> O
K O
and O
reorient O
isotropically O
above O
<nUm> O
K O
. O


the O
importance O
of O
scalar B-PRO
spin I-PRO
- I-PRO
spin I-PRO
coupling I-PRO
between O
fluorine O
and O
antimony B-MAT
nuclei O
is O
reflected O
by O
the O
t1p O
results O
in O
the O
vicinity O
of O
the O
T1 O
minimum O
. O


the O
raman B-CMT
spectra O
of O
the O
cubic B-SPL
phase O
at O
higher O
and O
lower O
temperatures O
are O
different O
and O
the O
polarized O
spectra O
of O
single B-DSC
crystals I-DSC
are O
used O
to O
assign O
the O
bands O
in O
terms O
of O
a O
C3 O
- O
site O
group B-PRO
symmetry I-PRO
for O
the O
SbF-6 B-MAT
- O
groups O
and O
a O
T O
unit B-PRO
cell I-PRO
group I-PRO
symmetry I-PRO
. O


the O
effect O
of O
structure B-PRO
on O
the O
electronic B-PRO
properties I-PRO
of O
a-Si B-MAT
: I-MAT
H I-MAT


this O
paper O
describes O
the O
results O
of O
an O
investigation O
of O
the O
relationship O
between O
structural B-PRO
disorder I-PRO
and O
electronic B-PRO
properties I-PRO
of O
amorphous B-DSC
silicon B-MAT
films B-DSC
. O


the O
structure B-PRO
of O
the O
films B-DSC
was O
determined O
by O
means O
of O
multi-angle B-CMT
ellipsometry I-CMT
and O
these O
results O
are O
correlated O
with O
the O
characteristic O
energy O
of O
the O
valence B-PRO
band I-PRO
tail I-PRO
and O
the O
defect B-PRO
state I-PRO
density I-PRO
as O
determined O
by O
the O
constant B-CMT
photocurrent I-CMT
method I-CMT
. O


formation O
of O
δ B-SPL
phase O
and O
its O
effects O
on O
magnetic B-PRO
properties I-PRO
and O
magnetostriction B-PRO
of O
Tb0.5Pr0.5(Fe0.4+x B-MAT
co0.6-x I-MAT
)1.9 I-MAT
( I-MAT
0x0.6 I-MAT
) I-MAT


structure B-PRO
, O
magnetic B-PRO
properties I-PRO
and O
magnetostriction B-PRO
of O
Tb0.5Pr0.5(Fe0.4+xCo0.6-x)1.9 B-MAT
( I-MAT
0x0.6 I-MAT
) I-MAT
alloys B-DSC
are O
investigated O
. O


the O
existence O
of O
the O
δ B-SPL
phase O
for O
<nUm> O
% O
Tb B-MAT
and O
<nUm> O
% O
Pr B-MAT
is O
beneficial O
to O
the O
formation O
of O
the O
Cu2Mg B-MAT
- O
type O
laves B-SPL
phase I-SPL
. O


the O
composition B-PRO
dependence O
of O
curie B-PRO
temperature I-PRO
has O
the O
same O
trend O
as O
the O
slater B-CMT
– I-CMT
pauling I-CMT
curve I-CMT
for O
the O
moment B-PRO
of O
Fe B-MAT
– I-MAT
Co I-MAT
alloys B-DSC
. O


the O
saturation B-PRO
magnetization I-PRO
ms I-PRO
and O
the O
remanence B-PRO
MR I-PRO
decrease O
, O
whereas O
the O
coercivity B-PRO
iHc I-PRO
increases O
with O
decreasing O
Co B-MAT
content O
, O
due O
to O
the O
increased O
amount O
of O
the O
non-cubic B-SPL
Ni3Pu I-SPL
- O
type O
phase O
. O


the O
polycrystalline B-DSC
magnetostriction B-MAT
|l[?]-l| I-MAT
of O
the O
alloys B-DSC
at O
room O
temperature O
increases O
with O
increasing O
magnetic O
field O
and O
does O
not O
achieve O
saturation O
up O
to O
796kA O
/ O
m O
. O


synthesis O
of O
FeLiO4P B-MAT
/ O
C B-MAT
using O
ionic O
liquid O
as O
carbon B-MAT
source O
for O
lithium B-APL
ion I-APL
batteries I-APL


FeLiO4P B-MAT
/ O
C B-MAT
( O
LFP B-MAT
/ O
C B-MAT
) O
materials O
are O
synthesized O
by O
a O
hydrothermal B-SMT
method I-SMT
with O
ionic O
liquid O
1-vinyl-3-ethylimidazolium O
bis(trifluoromethylsulfony)imide O
( O
[VEIm]NTf2 O
) O
as O
carbon B-MAT
source O
. O


carbon B-MAT
films B-DSC
of O
<nUm> O
– O
<nUm> O
nm O
are O
successfully O
coated O
on O
the O
surface B-DSC
of O
FeLiO4P B-MAT
( O
LFP B-MAT
) O
particles B-DSC
and O
serve O
as O
the O
protective B-APL
layers I-APL
of O
LFP B-MAT
particles B-DSC
during O
cycling O
. O


the O
carbon B-MAT
materials O
also O
fill O
the O
gap O
between O
LFP B-MAT
particles B-DSC
, O
which O
creates O
electron O
transfer O
paths O
. O


due O
to O
the O
integrated O
carbon B-MAT
materials O
, O
the O
LFP B-MAT
/ O
C B-MAT
exhibits O
significantly O
improved O
reversibility B-PRO
, O
cycle B-PRO
stability I-PRO
, O
rate B-PRO
performance I-PRO
, O
and O
charge B-PRO
and O
discharge B-PRO
capacity I-PRO
. O


these O
results O
demonstrate O
a O
simple O
and O
scalable O
application O
of O
ionic O
liquid O
[VEIm]NTf2 O
as O
carbon B-MAT
source O
toward O
electrochemical B-APL
energy I-APL
storage I-APL
. O


low B-CMT
- I-CMT
field I-CMT
microwave I-CMT
absorption I-CMT
in O
pulse B-SMT
laser I-SMT
deposited I-SMT
FeSi B-MAT
thin B-DSC
film I-DSC


low B-CMT
field I-CMT
microwave I-CMT
absorption I-CMT
( O
LFMA B-CMT
) O
measurements O
at O
9.4GHz O
( O
x-band O
) O
, O
were O
carried O
out O
on O
pulse B-SMT
laser I-SMT
deposited I-SMT
( O
PLD B-SMT
) O
polycrystalline B-DSC
B20 B-MAT
cubic B-SPL
structure O
FeSi B-MAT
thin B-DSC
film I-DSC
grown O
on O
Si B-MAT
( O
<nUm> O
) O
substrate B-DSC
. O


the O
LFMA B-CMT
properties O
of O
the O
films B-DSC
were O
investigated O
as O
a O
function O
of O
DC O
field O
, O
temperature O
, O
microwave O
power O
and O
the O
orientation O
of O
DC O
field O
with O
respect O
to O
the O
film B-DSC
surface I-DSC
. O


the O
LFMA B-CMT
signal O
is O
very O
strong O
when O
the O
DC O
field O
is O
parallel O
to O
the O
film B-DSC
surface I-DSC
and O
vanishes O
at O
higher O
angles O
. O


the O
LFMA B-CMT
signal O
strength O
increases O
as O
the O
microwave O
power O
is O
increased O
. O


the O
LFMA B-CMT
signal O
disappears O
around O
340K O
, O
which O
can O
be O
attributed O
to O
the O
disappearance O
of O
ferromagnetic B-PRO
state I-PRO
well O
above O
room O
temperature O
in O
these O
films B-DSC
. O


we O
believe O
that O
domain B-PRO
structure I-PRO
evolution O
in O
low O
fields O
, O
which O
in O
turn O
modifies O
the O
low B-PRO
field I-PRO
permeability I-PRO
as O
well O
as O
the O
anisotropy B-PRO
, O
could O
be O
the O
origin O
of O
the O
LFMA B-CMT
observed O
in O
these O
films B-DSC
. O


the O
observation O
of O
LFMA B-CMT
opens O
the O
possibility O
of O
the O
FeSi B-MAT
films B-DSC
to O
be O
used O
as O
low B-APL
magnetic I-APL
field I-APL
sensors I-APL
in O
the O
microwave O
and O
rf O
frequency O
regions O
. O


mossbauer B-CMT
studies I-CMT
of O
R3(Fe,Ti)29 B-MAT
compounds O


mossbauer B-CMT
spectroscopy I-CMT
has O
been O
used O
to O
study O
the O
R3(Fe,Ti)29 B-MAT
, I-MAT
( I-MAT
r I-MAT
 I-MAT
Nd I-MAT
, I-MAT
Sm I-MAT
) I-MAT
compounds O
. O


the O
mossbauer B-CMT
spectra O
demonstrate O
that O
the O
iron B-MAT
sites O
are O
quite O
similar O
to O
those O
of O
the O
<nUm> O
: O
<nUm> O
phase O
. O


fitting O
of O
the O
mossbauer B-CMT
spectra O
has O
yielded O
average O
hyperfine B-PRO
field I-PRO
values I-PRO
which O
are O
in O
the O
range O
of O
those O
of O
the O
<nUm> O
: O
<nUm> O
and O
<nUm> O
: O
<nUm> O
compounds O
. O


the O
mossbauer B-CMT
analysis I-CMT
results O
also O
indicate O
that O
the O
Ti B-MAT
atoms O
do O
not O
substitute O
in O
the O
dumbbell O
Fe B-MAT
sites O
of O
the O
<nUm> O
: O
<nUm> O
structure O
. O


antimony B-MAT
doped B-DSC
whiskers I-DSC
of O
OSn B-MAT
<nUm> I-MAT
grown O
from O
vapor B-SMT
phase I-SMT


single B-DSC
crystalline I-DSC
antimony B-MAT
- O
doped B-DSC
O2Sn B-MAT
whiskers B-DSC
( O
<nUm> O
– O
0.25at O
% O
Sb B-MAT
) O
have O
been O
synthesized O
by O
in B-SMT
situ I-SMT
doping I-SMT
process O
in O
horizontal B-SMT
flow I-SMT
reactor I-SMT
. O


antimony B-MAT
introduction O
results O
in O
whisker B-DSC
morphology B-PRO
change O
. O


antimony B-MAT
allows O
to O
control O
the O
resistivity B-PRO
and O
band B-PRO
gap I-PRO
of O
O2Sn B-MAT
. O


the O
whiskers B-DSC
present O
high O
transmittance B-PRO
in O
visible O
region O
being O
suitable O
for O
several O
applications O
where O
good O
transparency B-PRO
and O
conductivity B-PRO
is O
necessary O
. O


fabrication O
of O
OZn B-MAT
/ O
CuS B-MAT
core B-DSC
/ O
shell B-DSC
nanoarrays I-DSC
for O
inorganic O
– O
organic O
heterojunction B-APL
solar I-APL
cells I-APL


uniform O
CuS B-MAT
shell B-DSC
was O
prepared O
on O
the O
surface B-DSC
of O
OZn B-MAT
nanorods B-DSC
arrays O
via O
a O
simple O
hydrothermal B-SMT
and I-SMT
ion I-SMT
exchange I-SMT
method I-SMT
. O


then O
, O
the O
solid O
state O
inorganic O
– O
organic O
heterojunction B-APL
solar I-APL
cell I-APL
( O
ITO B-MAT
/ O
OZn B-MAT
/ O
CuS B-MAT
/ O
P3HT B-MAT
/ O
Pt B-MAT
) O
was O
constructed O
using O
OZn B-MAT
/ O
CuS B-MAT
core B-DSC
/ O
shell B-DSC
nanoarrays I-DSC
as O
photoanode B-APL
and O
P3HT B-MAT
as O
both O
hole B-APL
conductor I-APL
and O
light B-APL
absorber I-APL
. O


the O
thickness O
of O
CuS B-MAT
semiconductor B-APL
sensitizer I-APL
layers I-APL
, O
which O
can O
be O
controlled O
by O
the O
immersing O
time O
of O
OZn B-MAT
nanorods B-DSC
in O
reaction O
solution O
, O
has O
an O
important O
effect O
on O
the O
cell B-PRO
performances I-PRO
. O


and O
the O
cell B-PRO
efficiency I-PRO
up O
to O
<nUm> O
% O
was O
obtained O
due O
to O
the O
improved O
absorption B-PRO
spectrum I-PRO
and O
appropriate O
energy B-PRO
gap I-PRO
structure I-PRO
in O
OZn B-MAT
/ O
CuS B-MAT
/ O
P3HT B-MAT
. O


an O
ultrasound B-SMT
- I-SMT
assisted I-SMT
approach O
to O
synthesize O
Mn3O4 B-MAT
/ O
RGO B-MAT
hybrids O
with O
high O
capability O
for O
lithium B-APL
ion I-APL
batteries I-APL


A O
facile O
, O
low O
- O
cost O
and O
green B-SMT
ultrasound I-SMT
- I-SMT
assisted I-SMT
method I-SMT
was O
developed O
to O
ultra-fast O
synthesize O
Mn3O4 B-MAT
nanosheets B-DSC
supported O
on O
reduced B-MAT
graphene I-MAT
oxide I-MAT
( O
RGO B-MAT
) O
. O


such O
hybrid O
materials O
exhibited O
ultrahigh O
performance O
as O
lithium B-APL
ion I-APL
battery I-APL
( O
LIB B-APL
) O
anodes B-APL
, O
whose O
specific B-PRO
capacity I-PRO
reached O
more O
than O
<nUm> O
mA O
h O
g-1 O
after O
<nUm> O
cycles O
at O
a O
current O
density O
of O
<nUm> O
mA O
g-1 O
( O
based O
on O
the O
mass O
of O
Mn3O4 B-MAT
) O
. O


the O
remarkably O
enhanced O
LIB B-APL
performance O
could O
be O
attributed O
to O
their O
layer O
- O
by O
- O
layer O
aggregation O
structures O
. O


A O
new O
polymorph O
of O
H4NO7V3 B-MAT
: O
synthesis O
, O
structure O
, O
magnetic B-PRO
and O
electrochemical B-PRO
properties I-PRO


H4NO7V3 B-MAT
micro-sized B-DSC
crystals I-DSC
have O
been O
successfully O
synthesized O
via O
a O
conventional O
hydrothermal B-SMT
synthesis I-SMT
route I-SMT
. O


the O
products O
were O
characterized O
by O
means O
of O
x-ray B-CMT
and O
neutron B-CMT
powder I-CMT
diffraction I-CMT
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
, O
fourier B-CMT
transform I-CMT
infrared I-CMT
spectroscopy I-CMT
, O
static B-CMT
magnetization I-CMT
measurements I-CMT
, O
and O
electrochemical B-CMT
cycling I-CMT
. O


the O
diffraction B-CMT
patterns I-CMT
of O
H4NO7V3 B-MAT
can O
be O
indexed O
in O
the O
monoclinic B-SPL
space O
group O
P21 B-SPL
with O
the O
cell B-PRO
parameters I-PRO
a I-PRO
= O
<nUm> O
Å O
, O
b B-PRO
= O
<nUm> O
Å O
, O
c B-PRO
= O
<nUm> O
Å O
, O
β B-PRO
= O
<nUm> O
° O
, O
and O
V B-PRO
= O
<nUm> O
A3 O
. O


the O
crystal B-PRO
structure I-PRO
is O
built O
up O
of O
(V3O7)-layers O
with O
V4+ O
- O
and O
V5+ O
- O
ions O
, O
which O
occupy O
oxygen O
octahedra O
and O
tetrahedra O
, O
respectively O
. O


the O
(V3O7)-layers O
are O
bonded O
by O
(NH4)+ O
- O
ions O
. O


analysis O
of O
the O
magnetization B-PRO
data O
confirms O
that O
<nUm> O
/ O
<nUm> O
of O
the O
V B-MAT
- O
ions O
are O
<nUm> O
+ O
associated O
with O
S B-PRO
= O
<nUm> O
/ O
<nUm> O
. O


roughly O
half O
of O
them O
are O
strongly O
coupled O
to O
antiferromagnetic B-PRO
dimers O
( O
J B-PRO
= O
<nUm> O
K O
) O
, O
the O
other O
half O
is O
only O
weakly O
( O
J B-PRO
of O
several O
<nUm> O
K O
) O
antiferromagnetically B-PRO
interacting O
. O


electrochemical B-CMT
cycling I-CMT
shows O
reversible O
lithium B-MAT
de- O
/ O
intercalation O
into O
the O
layered B-DSC
H4NO7V3 B-MAT
host O
structure B-PRO
with O
an O
initial O
specific O
discharge B-PRO
capacity I-PRO
of O
<nUm> O
mAh O
/ O
g O
at O
<nUm> O
mA O
/ O
g O
. O


effects O
of O
doping B-PRO
concentration I-PRO
and O
annealing B-SMT
temperature O
on O
properties O
of O
highly O
- O
oriented O
Al B-MAT
- O
doped B-DSC
OZn B-MAT
films B-DSC


transparent B-PRO
and O
conductive B-PRO
high O
- O
preferential O
c-axis-oriented O
Al B-MAT
- O
doped B-DSC
zinc B-MAT
oxide I-MAT
( O
OZn B-MAT
: I-MAT
Al I-MAT
, O
AZO B-MAT
) O
thin B-DSC
films I-DSC
have O
been O
prepared O
by O
the O
sol B-SMT
– I-SMT
gel I-SMT
route O
. O


film B-DSC
deposition O
was O
performed O
by O
spin B-SMT
- I-SMT
coating I-SMT
technique O
on O
Si(100) B-MAT
and O
glass B-MAT
substrate B-DSC
. O


structural B-PRO
, O
electrical B-PRO
and O
optical B-PRO
properties I-PRO
were O
performed O
by O
XRD B-CMT
, O
SEM B-CMT
, O
four B-CMT
- I-CMT
point I-CMT
probe I-CMT
, O
photoluminescence B-CMT
( O
PL B-CMT
) O
and O
UV B-CMT
- I-CMT
VIS I-CMT
spectrum I-CMT
measurements I-CMT
. O


the O
effects O
of O
annealing B-SMT
temperature O
and O
dopant B-PRO
concentration I-PRO
on O
the O
structural B-PRO
and O
optical B-PRO
properties I-PRO
are O
well O
discussed O
. O


it O
was O
found O
that O
both O
annealing B-SMT
temperature O
and O
doping B-PRO
concentration I-PRO
alter O
the O
microstructures B-PRO
of O
AZO B-MAT
films B-DSC
. O


also O
, O
PL B-CMT
spectra O
show O
two O
main O
peaks O
centered O
at O
about O
<nUm> O
nm O
( O
UV O
) O
and O
<nUm> O
nm O
( O
green O
) O
. O


the O
variation O
of O
UV B-PRO
- I-PRO
to I-PRO
- I-PRO
green I-PRO
band I-PRO
emission I-PRO
was O
greatly O
influenced O
by O
annealing B-SMT
temperatures O
and O
doping B-PRO
concentration I-PRO
. O


reduction O
in O
intensity B-PRO
ratio I-PRO
of I-PRO
UV I-PRO
- I-PRO
to I-PRO
- I-PRO
green I-PRO
might O
possibly O
originate O
from O
the O
formation O
of O
Al B-PRO
– I-PRO
O I-PRO
bonds I-PRO
and O
localized O
Al B-PRO
- I-PRO
impurity I-PRO
states I-PRO
. O


the O
minimum O
sheet B-PRO
resistance I-PRO
of O
<nUm> O
Ω O
/ O
□ O
was O
obtained O
for O
the O
film B-DSC
doped I-DSC
with O
<nUm> O
mol O
% O
Al B-MAT
, O
annealed B-SMT
at O
<nUm> O
° O
C O
. O


meanwhile O
, O
all O
AZO B-MAT
films B-DSC
deposited O
on O
glass B-MAT
are O
very O
transparent B-PRO
, O
between O
<nUm> O
% O
and O
<nUm> O
% O
transmittance B-PRO
, O
within O
the O
visible O
wavelength O
region O
. O


these O
results O
imply O
that O
the O
doping B-PRO
concentration I-PRO
did O
not O
have O
significant O
influence O
on O
transparent B-PRO
properties I-PRO
, O
but O
improve O
the O
electrical B-PRO
conductivity I-PRO
and O
diversify O
emission B-PRO
features I-PRO
. O


physical O
investigations O
on O
MoO3 B-MAT
sprayed B-SMT
thin B-DSC
film I-DSC
for O
selective B-APL
sensitivity I-APL
applications I-APL


molybdenum B-MAT
trioxide I-MAT
( O
MoO3 B-MAT
) O
thin B-DSC
films I-DSC
have O
been O
prepared O
by O
the O
spray B-SMT
pyrolysis I-SMT
technique O
on O
glass B-MAT
substrates B-DSC
at O
<nUm> O
° O
C O
using O
(NH4)6Mo7O24*4H2O B-MAT
( O
ACROS O
pure O
more O
than O
<nUm> O
% O
) O
as O
precursor O
in O
the O
starting O
solution O
. O


x-ray B-CMT
analysis I-CMT
shows O
that O
MoO3 B-MAT
thin B-DSC
film I-DSC
crystallizes O
in O
orthorhombic B-SPL
structure O
with O
a O
preferred O
orientation B-PRO
of O
the O
crystallites B-DSC
along O
( O
<nUm> O
) O
and O
( O
<nUm> O
) O
directions O
. O


the O
surface B-PRO
topography I-PRO
of O
these O
films B-DSC
was O
performed O
by O
atomic B-CMT
force I-CMT
microscopy I-CMT
and O
the O
optical B-PRO
properties I-PRO
were O
investigated O
through O
reflectance B-PRO
and O
transmittance B-PRO
measurements O
. O


the O
optical B-PRO
band I-PRO
gap I-PRO
energy I-PRO
value O
is O
about O
<nUm> O
eV O
and O
the O
urbach B-PRO
energy I-PRO
is O
of O
the O
order O
of O
<nUm> O
meV O
. O


raman B-CMT
spectroscopy I-CMT
shows O
the O
bands' O
positions O
corresponding O
to O
a-MoO3 B-MAT
phase O
. O


PL B-CMT
measurements O
show O
two O
large O
bands O
located O
at O
<nUm> O
nm O
and O
<nUm> O
nm O
respectively O
. O


finally O
, O
the O
electric B-PRO
conductivity I-PRO
of O
MoO3 B-MAT
thin B-DSC
film I-DSC
was O
investigated O
using O
impedance B-CMT
spectroscopy I-CMT
technique O
in O
the O
frequency O
range O
<nUm> O
Hz O
– O
13MHz O
at O
various O
temperatures O
( O
<nUm> O
– O
<nUm> O
° O
C O
) O
. O


the O
variation O
of O
the O
conductivity B-PRO
in O
terms O
of O
the O
temperature O
is O
characterized O
by O
the O
existence O
of O
two O
ranges O
with O
activation B-PRO
energy I-PRO
of O
<nUm> O
, O
and O
<nUm> O
eV O
. O


AC B-PRO
conductivity I-PRO
of O
MoO3 B-MAT
thin B-DSC
films I-DSC
is O
investigated O
through O
jonsher B-CMT
law I-CMT
. O


the O
effect O
of O
optical O
pump O
on O
the O
absorption B-PRO
coefficient I-PRO
of O
0.65CaTiO3-0.35NdAlO3 B-MAT
ceramics B-DSC
in O
terahertz O
range O


the O
absorption B-PRO
coefficient I-PRO
of O
0.65CaTiO3-0.35NdAlO3 B-MAT
ceramics B-DSC
under O
external O
optical O
fields O
was O
investigated O
by O
terahertz B-CMT
time I-CMT
- I-CMT
domain I-CMT
spectroscopy I-CMT
in O
a O
frequency O
range O
of O
<nUm> O
THz O
to O
<nUm> O
THz O
at O
room O
temperature O
. O


it O
could O
be O
found O
that O
the O
variation O
of O
the O
absorption B-PRO
coefficient I-PRO
is O
approximately O
from O
<nUm> O
cm-1 O
to O
<nUm> O
cm-1 O
in O
the O
frequency O
range O
of O
<nUm> O
THz O
to O
<nUm> O
THz O
, O
and O
the O
tuning O
range O
is O
about O
<nUm> O
cm-1 O
at O
<nUm> O
THz O
which O
almost O
reaches O
up O
to O
nearly O
<nUm> O
% O
. O


the O
micromechanism O
of O
these O
results O
was O
attributed O
to O
the O
excited O
free O
carriers O
by O
the O
external O
optical O
pump O
intensity O
. O


syntheses O
, O
structure B-PRO
, O
magnetism B-PRO
, O
and O
optical B-PRO
properties I-PRO
of O
the O
interlanthanide B-MAT
sulfides I-MAT
d-Ln I-MAT
2- I-MAT
x I-MAT
Lu I-MAT
x I-MAT
S3 I-MAT
( I-MAT
ln I-MAT
= I-MAT
Ce I-MAT
, I-MAT
Pr I-MAT
, I-MAT
Nd I-MAT
) I-MAT


d-Ln2-xLuxS3 B-MAT
( I-MAT
ln I-MAT
= I-MAT
Ce I-MAT
, I-MAT
Pr I-MAT
, I-MAT
Nd I-MAT
; I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
– I-MAT
<nUm> I-MAT
) I-MAT
compounds O
have O
been O
synthesized O
through O
the O
reaction O
of O
elemental O
rare O
- O
earth O
metals O
and O
S B-MAT
using O
a O
S3Sb2 B-MAT
flux O
at O
<nUm> O
° O
C O
. O


these O
compounds O
are O
isotypic B-PRO
with O
CeS3Tm B-MAT
, O
which O
has O
a O
complex O
three O
- O
dimensional O
structure B-PRO
. O


it O
includes O
four O
larger O
ln3+ O
sites O
in O
eight- O
and O
nine O
- O
coordinate O
environments O
, O
two O
disordered O
seven O
- O
coordinate O
ln3+ O
/ O
lu3+ O
positions O
, O
and O
two O
six O
- O
coordinate O
lu3+ O
ions O
. O


the O
structure B-PRO
is O
constructed O
from O
one O
- O
dimensional O
chains O
of O
LnSn B-MAT
( O
n O
= O
<nUm> O
– O
<nUm> O
) O
polyhedra O
that O
extend O
along O
the O
b-axis O
. O


these O
polyhedra O
share O
faces O
or O
edges O
with O
two O
neighbors O
within O
the O
chains O
, O
while O
in O
the O
[ac] O
plane O
they O
share O
edges O
and O
corners O
with O
other O
chains O
. O


least B-CMT
square I-CMT
refinements I-CMT
gave O
rise O
to O
the O
formulas O
of O
d-Ce1.30Lu0.70S3 B-MAT
, O
d-Pr1.29Lu0.71S3 B-MAT
and O
d-Nd1.33Lu0.67S3 B-MAT
, O
which O
are O
consistent O
with O
the O
EDX B-CMT
analysis O
and O
magnetic B-PRO
susceptibility I-PRO
data O
. O


d-Ln2-xLuxS3 B-MAT
( I-MAT
ln I-MAT
= I-MAT
Ce I-MAT
, I-MAT
Pr I-MAT
, I-MAT
Nd I-MAT
; I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
– I-MAT
<nUm> I-MAT
) I-MAT
show O
no O
evidence O
of O
magnetic B-PRO
ordering I-PRO
down O
to O
5K O
. O


optical B-PRO
properties I-PRO
measurements O
show O
that O
the O
band B-PRO
gaps I-PRO
for O
d-Ce1.30Lu0.70S3 B-MAT
, O
d-Pr1.29Lu0.71S3 B-MAT
, O
and O
d-Nd1.33Lu0.67S3 B-MAT
are O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
eV O
, O
respectively O
. O


crystallographic O
data O
: O
d-Ce1.30Lu0.70S3 B-MAT
, O
monoclinic B-SPL
, O
space O
group O
P21 B-SPL
/ I-SPL
m I-SPL
, O
a B-PRO
= O
<nUm> O
, O
b B-PRO
= O
<nUm> O
, O
c B-PRO
= O
<nUm> O
Å O
, O
β B-PRO
= O
<nUm> O
, O
V B-PRO
= O
<nUm> O
, O
z B-PRO
= O
<nUm> O
; O
d-Pr1.29Lu0.71S3 B-MAT
, O
monoclinic B-SPL
, O
space O
group O
P21 B-SPL
/ I-SPL
m I-SPL
, O
a B-PRO
= O
<nUm> O
, O
b B-PRO
= O
<nUm> O
, O
c B-PRO
= O
<nUm> O
Å O
, O
β B-PRO
= O
<nUm> O
, O
V B-PRO
= O
<nUm> O
, O
z B-PRO
= O
<nUm> O
; O
d-Nd1.33Lu0.67S3 B-MAT
, O
monoclinic B-SPL
, O
space O
group O
P21 B-SPL
/ I-SPL
m I-SPL
, O
a B-PRO
= O
<nUm> O
, O
b B-PRO
= O
<nUm> O
, O
c B-PRO
= O
<nUm> O
Å O
, O
β B-PRO
= O
<nUm> O
, O
V B-PRO
= O
<nUm> O
, O
z B-PRO
= O
<nUm> O
. O


characterization O
of O
cast B-SMT
Mg B-MAT
– I-MAT
Li I-MAT
– I-MAT
Ca I-MAT
alloys B-DSC


microstructural B-CMT
characterization I-CMT
of O
Mg-12Li-xCa B-MAT
alloys I-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
− I-MAT
<nUm> I-MAT
wt. I-MAT
% I-MAT
) I-MAT
was O
performed O
via O
a O
combination O
of O
several O
analytical O
techniques O
. O


the O
addition O
of O
Ca B-MAT
to O
a O
Mg-12Li B-MAT
alloy B-DSC
resulted O
in O
as-cast B-DSC
microstructure B-PRO
with O
a O
primary O
dendrites B-DSC
of O
b-(Mg B-MAT
, I-MAT
Li I-MAT
) I-MAT
, O
a O
solid B-DSC
solution I-DSC
of O
Mg B-MAT
in O
bcc B-SPL
Li B-MAT
, O
and O
a O
lamellar B-DSC
interdendritic I-DSC
eutectic I-DSC
of O
the O
b-phase O
and O
CaMg2 B-MAT
. O


the O
amount O
of O
the O
eutectic B-DSC
in O
cast B-SMT
Mg-12Li-xCa B-MAT
alloys B-DSC
corresponded O
to O
the O
Ca B-MAT
content O
. O


cold B-SMT
- I-SMT
rolling I-SMT
the O
alloys B-DSC
re-distributed O
the O
micro-constituents O
. O


surface B-SMT
oxidation I-SMT
was O
shown O
to O
preferentially O
occur O
on O
the O
b-phase O
. O


high O
hole B-PRO
concentration I-PRO
Li B-MAT
- O
doped B-DSC
NiOZn B-MAT
thin B-DSC
films I-DSC
grown O
by O
photo B-SMT
- I-SMT
assisted I-SMT
metal I-SMT
– I-SMT
organic I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT


high O
hole B-PRO
concentration I-PRO
Li B-MAT
- O
doped B-DSC
NiOZn B-MAT
thin B-DSC
films I-DSC
were O
grown O
by O
metal B-SMT
– I-SMT
organic I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
( O
MOCVD B-SMT
) O
. O


the O
crystalline B-PRO
, O
optical B-PRO
, O
electrical B-PRO
, O
and O
morphological B-PRO
characteristics I-PRO
of O
the O
NiOZn B-MAT
films B-DSC
were O
studied O
as O
a O
function O
of O
lithium B-PRO
content I-PRO
. O


the O
resistance B-PRO
of O
the O
films B-DSC
decreased O
and O
the O
hole B-PRO
concentration I-PRO
greatly O
increased O
with O
increasing O
lithium B-PRO
content I-PRO
. O


however O
, O
the O
crystalline B-PRO
and O
optical B-PRO
properties I-PRO
were O
observed O
to O
degrade O
as O
the O
lithium B-PRO
content I-PRO
was O
increased O
. O


to O
relieve O
the O
degradation O
, O
a O
photo B-SMT
- I-SMT
assisted I-SMT
MOCVD I-SMT
method O
was O
used O
in O
order O
to O
restrict O
this O
degradation O
and O
this O
represents O
a O
new O
way O
to O
obtain O
stable O
high O
hole B-PRO
concentration I-PRO
NiOZn B-MAT
films B-DSC
. O


synthesis O
of O
zirconia B-MAT
( O
O2Zr B-MAT
) O
nanowires B-DSC
via O
chemical B-SMT
vapor I-SMT
deposition I-SMT


monoclinic B-SPL
zirconia B-MAT
nanowires B-DSC
were O
synthesized O
by O
chemical B-SMT
vapor I-SMT
deposition I-SMT
using O
Cl4Zr B-MAT
powder B-DSC
as O
a O
starting O
material O
at O
<nUm> O
° O
C O
and O
760Torr O
. O


graphite B-MAT
was O
employed O
as O
a O
substrate B-DSC
, O
and O
an O
Au B-MAT
thin B-DSC
film I-DSC
was O
pre-deposited O
on O
the O
graphite B-MAT
as O
a O
catalyst B-APL
. O


the O
zirconia B-MAT
nanostructure B-DSC
morphology B-PRO
was O
observed O
through O
scanning B-CMT
electron I-CMT
microscopy I-CMT
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
. O


based O
on O
x-ray B-CMT
diffraction I-CMT
, O
selected B-CMT
area I-CMT
electron I-CMT
diffraction I-CMT
, O
and O
raman B-CMT
spectroscopy I-CMT
data O
, O
the O
resulting O
crystal B-PRO
structure I-PRO
was O
found O
to O
be O
single B-DSC
crystalline I-DSC
monoclinic B-SPL
zirconia B-MAT
. O


the O
homogeneous O
distributions O
of O
Zr B-MAT
, O
O B-MAT
and O
Au B-MAT
were O
studied O
by O
scanning B-CMT
transmission I-CMT
electron I-CMT
microscopy I-CMT
with O
energy B-CMT
dispersive I-CMT
x-ray I-CMT
spectroscopy I-CMT
mapping O
, O
and O
there O
was O
no O
metal O
droplet O
at O
the O
nanowire B-DSC
tips O
despite O
the O
use O
of O
an O
Au B-MAT
metal O
catalyst B-APL
. O


this O
result O
is O
apart O
from O
that O
of O
conventional O
metal O
catalyzed O
nanowires B-DSC
. O


effect O
of O
substituents O
on O
the O
stability B-PRO
and O
physicochemical B-PRO
properties I-PRO
of O
lanthanide B-MAT
chromates I-MAT
( O
V O
) O


In O
order O
to O
investigate O
the O
effect O
of O
substituents O
on O
the O
stability B-PRO
and O
physicochemical B-PRO
properties I-PRO
of O
the O
chromate B-MAT
( O
V O
) O
phase O
, O
chromium B-MAT
in O
lanthanum B-MAT
chromate I-MAT
( O
V O
) O
has O
been O
partially O
substituted O
by O
ti4+ O
, O
cu2+ O
and O
mg2+ O
ions O
. O


x-ray B-CMT
diffraction I-CMT
results O
revealed O
that O
the O
material O
La(Cr1-xMx) B-MAT
o4-d I-MAT
where I-MAT
m I-MAT
= I-MAT
Cu I-MAT
or I-MAT
Ti I-MAT
can O
exist O
as O
a O
single O
phase O
in O
the O
compositional O
range O
of O
x O
⩽ O
<nUm> O
. O


substitution O
affects O
the O
morphology B-PRO
of O
the O
material O
to O
a O
considerable O
extent O
apart O
from O
the O
thermal B-PRO
stability I-PRO
of O
the O
CrLaO4 B-MAT
phase O
. O


the O
substituents O
also O
modify O
the O
physicochemical B-PRO
and O
spectral B-PRO
characteristics I-PRO
of O
CrLaO4 B-MAT
( O
V O
) O
. O


it O
has O
not O
been O
possible O
to O
incorporate O
magnesium B-MAT
to O
any O
appreciable O
extent O
in O
the O
CrLaO4 B-MAT
( O
V O
) O
phase O
. O


optical B-PRO
radiation I-PRO
efficiencies I-PRO
of O
metal O
nanoparticles B-DSC
for O
optoelectronic B-APL
applications I-APL


the O
optical B-PRO
radiation I-PRO
efficiencies I-PRO
, O
defined O
by O
the O
ratio O
of O
the O
scattering B-PRO
cross-section I-PRO
to O
the O
extinction B-PRO
cross-section I-PRO
, O
of O
spherical B-DSC
nanoparticles I-DSC
of O
<nUm> O
kinds O
of O
metal O
, O
Ag B-MAT
, O
Al B-MAT
, O
Au B-MAT
, O
Co B-MAT
, O
Cr B-MAT
, O
Cu B-MAT
, O
Ni B-MAT
, O
Pd B-MAT
, O
Pt B-MAT
, O
Sn B-MAT
and O
Ti B-MAT
, O
in O
the O
air O
were O
calculated O
based O
on O
the O
classical B-CMT
electromagnetic I-CMT
theory I-CMT
. O


this O
optical B-PRO
radiation I-PRO
efficiency I-PRO
represents O
the O
energy O
fraction O
of O
the O
incident O
light O
reradiated O
from O
the O
particle B-DSC
, O
not O
wasted O
as O
heat O
, O
and O
the O
obtained O
data O
is O
an O
effective O
guide O
for O
the O
selection O
of O
metal O
elements O
for O
nanoparticle B-DSC
- O
enhanced O
optoelectronic B-APL
devices I-APL
. O


Ag B-MAT
, O
Al B-MAT
, O
Au B-MAT
and O
Cu B-MAT
were O
found O
to O
have O
much O
higher O
optical B-PRO
radiation I-PRO
efficiencies I-PRO
than O
the O
other O
metals O
for O
most O
range O
of O
wavelengths O
. O


strikingly O
, O
Ag B-MAT
and O
Al B-MAT
nanoparticles B-DSC
with O
diameters O
around O
<nUm> O
nm O
were O
found O
to O
exhibit O
over O
− O
<nUm> O
% O
optical B-PRO
radiation I-PRO
efficiencies I-PRO
at O
most O
optical O
frequencies O
. O


crystal B-PRO
structure I-PRO
, O
electrical B-PRO
resistivity I-PRO
, O
and O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
of O
Ag2As2Ba B-MAT


the O
ternary O
arsenide B-MAT
Ag2As2Ba I-MAT
has O
been O
prepared O
by O
reaction O
of O
the O
elements O
at O
<nUm> O
° O
C O
. O


single B-DSC
- I-DSC
crystal I-DSC
and O
powder B-DSC
x-ray B-CMT
diffraction I-CMT
analysis O
revealed O
that O
it O
adopts O
the O
Cr2Si2Th B-SPL
- O
type O
structure O
( O
pearson O
symbol O
tI10 B-SPL
, O
space O
group O
I4 B-SPL
/ I-SPL
mmm I-SPL
, O
z B-PRO
= O
<nUm> O
, O
a B-PRO
= O
<nUm> O
Å O
, O
c B-PRO
= O
<nUm> O
Å O
at O
295K O
) O
featuring O
[Ag2As2] B-MAT
layers B-DSC
interconnected O
by O
homoatomic O
As B-MAT
– O
As B-MAT
bonds O
along O
the O
c-direction O
. O


band B-CMT
structure I-CMT
calculations I-CMT
indicate O
no O
gap O
at O
the O
fermi B-PRO
level I-PRO
, O
and O
support O
the O
occurrence O
of O
strong O
As B-MAT
– O
As B-MAT
and O
weak O
Ag B-MAT
– O
Ag B-MAT
bonding O
. O


the O
asymmetric B-PRO
lineshape I-PRO
and O
the O
absence O
of O
a O
BE O
shift O
in O
the O
Ag B-MAT
3d5 O
/ O
<nUm> O
core O
- O
line O
peak O
relative O
to O
the O
element O
suggest O
delocalization O
of O
the O
Ag B-MAT
valence B-PRO
electrons I-PRO
. O


A O
significant O
negative O
BE O
shift O
( O
1.0eV O
) O
in O
the O
As B-MAT
3d5 O
/ O
<nUm> O
core O
- O
line O
peak O
relative O
to O
the O
element O
confirms O
the O
presence O
of O
anionic O
As B-MAT
atoms O
. O


A O
reversible O
transition O
is O
observed O
at O
175K O
in O
the O
electrical B-PRO
resistivity I-PRO
, O
and O
is O
probably O
related O
to O
a O
structural B-PRO
phase I-PRO
transition I-PRO
. O


CrN B-MAT
– O
Ag B-MAT
nanocomposite B-DSC
coatings B-APL
: O
effect O
of O
growth O
temperature O
on O
the O
microstructure B-PRO


CrN B-MAT
– O
Ag B-MAT
composite B-DSC
layers I-DSC
, O
5-um-thick O
and O
containing O
<nUm> O
at. O
% O
Ag B-MAT
, O
were O
co-deposited O
by O
reactive B-SMT
magnetron I-SMT
sputtering I-SMT
on O
Si(001) B-MAT
substrates B-DSC
in O
a O
<nUm> O
Pa O
pure O
nitrogen O
atmosphere O
at O
growth O
temperatures O
Ts O
= O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
° O
C O
. O


A O
combination O
of O
x-ray B-CMT
diffraction I-CMT
and O
cross-sectional B-CMT
microscopy I-CMT
analyses O
show O
that O
Ag B-MAT
segregates O
to O
form O
precipitates B-DSC
with O
an O
average O
size O
that O
increases O
from O
< O
<nUm> O
nm O
to O
~ O
<nUm> O
× O
<nUm> O
× O
<nUm> O
nm3 O
to O
~ O
<nUm> O
× O
<nUm> O
× O
<nUm> O
nm3 O
for O
Ts O
= O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
° O
C O
, O
respectively O
. O


At O
high O
Ts O
, O
the O
precipitates B-DSC
extend O
along O
the O
surface B-DSC
plane O
to O
form O
horizontal O
lamellae O
that O
cause O
grain O
re-nucleation O
and O
, O
in O
turn O
, O
a O
disruption O
of O
the O
columnar O
microstructure B-PRO
and O
a O
transition O
from O
a O
strong O
<nUm> O
texture O
for O
pure O
CrN B-MAT
to O
a O
mixed O
preferred O
orientation O
for O
the O
composite B-DSC
coatings B-APL
. O


In O
addition O
, O
Ag B-MAT
segregates O
to O
form O
mounds O
on O
the O
growing O
layer B-DSC
surface I-DSC
that O
result O
in O
the O
nucleation O
of O
nodules O
which O
exhibit O
an O
increased O
growth O
rate O
and O
extend O
up O
to O
<nUm> O
and O
<nUm> O
um O
above O
the O
surface B-DSC
for O
Ts O
= O
<nUm> O
and O
<nUm> O
° O
C O
, O
respectively O
, O
but O
are O
absent O
for O
Ts O
= O
<nUm> O
° O
C O
. O


the O
cross-sectional B-PRO
microhardness I-PRO
increases O
with O
Ts O
from O
<nUm> O
to O
<nUm> O
to O
<nUm> O
GPa O
for O
Ts O
= O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
° O
C O
, O
respectively O
, O
which O
is O
attributed O
to O
a O
decrease O
in O
the O
effective O
Ag B-MAT
concentration O
associated O
with O
temperature O
- O
activated O
segregation O
. O


the O
measured O
hardness B-PRO
for O
pure O
CrN B-MAT
is O
<nUm> O
GPa O
. O


experimental O
and O
theoretical O
investigation O
of O
parameter O
evolution O
of O
ultra-short O
gate B-APL
standard O
and O
pseudomorphic B-DSC
HEMTs B-APL


we O
present O
a O
coordinated O
experimental O
and O
theoretical O
investigation O
of O
the O
parameter O
evolution O
of O
ultra-short O
gate B-APL
HEMTs I-APL
down O
to O
<nUm> O
mm O
gate B-PRO
- I-PRO
length I-PRO
, O
and O
of O
the O
physical B-PRO
and O
electrical B-PRO
limitations I-PRO
to O
performance O
improvements O
. O


the O
study O
encompasses O
a O
broad O
range O
of O
well O
qualified O
situations O
allowing O
comparisons O
with O
previous O
investigations[1 O
– O
<nUm> O
] O
. O


the O
main O
features O
are,- O
the O
exploitation O
of O
two O
reliable O
technological O
processes O
namely O
planar B-DSC
- I-DSC
doped I-DSC
double I-DSC
- I-DSC
recessed I-DSC
AlAsGa B-MAT
/ O
AsGa B-MAT
HEMT B-APL
( O
S-HEMT B-APL
) O
and O
planar B-DSC
- I-DSC
doped I-DSC
pseudomorphic I-DSC
AlAsGa B-MAT
/ O
AsGaIn B-MAT
/ O
AsGa B-MAT
HEMT B-APL
with O
t-shaped O
and O
rectangular O
gate B-APL
( O
PM B-APL
- I-APL
HEMT I-APL
) O
, O
represented O
in O
fig.1 O
and O
<nUm> O
) O
, O
- O
coherent O
evolutions O
of O
full O
electrical B-PRO
parameter I-PRO
extractions O
from O
dc O
and O
<nUm> O
– O
40GHz O
HF O
coplanar B-CMT
probe I-CMT
on I-CMT
- I-CMT
chip I-CMT
measurements I-CMT
, O
including O
capacitances B-PRO
versus O
gate B-APL
length O
down O
to O
<nUm> O
mm O
, O
- O
physical O
modeling O
based O
on O
a O
quasibidimensional B-CMT
hydrodynamic I-CMT
approach I-CMT
( O
Q-2D B-CMT
) O
, O
allowing O
systematic O
parametrisation O
of O
HEMTs B-APL
, O
completed O
with O
electromagnetic B-CMT
finite I-CMT
element I-CMT
2-D I-CMT
modeling I-CMT
of O
electrostatic B-PRO
parasitic I-PRO
capacitances,- I-PRO
physical O
modeling O
based O
on O
monte B-CMT
carlo I-CMT
simulations I-CMT
( O
MC B-CMT
) O
for O
the O
investigation O
of O
short B-APL
1g I-APL
transistors I-APL
. O


for O
the O
gate O
width O
1g O
≤ O
0,1mm O
this O
analysis O
shows O
that O
the O
optimization O
of O
S- O
and O
PM B-APL
- I-APL
HEMT I-APL
depends O
on O
three O
parameters O
: O
- O
a O
weak O
influence O
of O
vds O
on O
the O
diffusion O
under O
the O
gate B-APL
, O
— O
a O
low O
parasitic B-PRO
electrostatic I-PRO
capacitance I-PRO
, O
- O
a O
high O
carrier B-PRO
velocity I-PRO
. O


graphene B-MAT
nanoribbon B-DSC
tunneling B-APL
field I-APL
effect I-APL
transistors I-APL


the O
electron B-PRO
- I-PRO
hole I-PRO
symmetry I-PRO
characteristic I-PRO
of O
graphene B-MAT
nanoribbons B-DSC
( O
GNRs B-MAT
) O
gives O
rise O
to O
the O
electron O
( O
hole O
) O
tunneling O
through O
valence B-PRO
( O
conduction B-PRO
) I-PRO
band I-PRO
states I-PRO
. O


by O
employing O
this O
property O
we O
have O
numerically O
investigated O
GNR B-MAT
field B-APL
effect I-APL
transistors I-APL
with O
p+ B-PRO
- I-PRO
type I-PRO
source B-APL
and O
drain B-APL
in O
the O
presence O
of O
a O
gate O
voltage O
- O
induced O
n B-PRO
- I-PRO
type I-PRO
channel B-APL
using O
the O
non-equilibrium B-CMT
green I-CMT
's I-CMT
function I-CMT
formalism I-CMT
. O


for O
long O
channels O
, O
the O
traditional O
FET B-PRO
- I-PRO
like I-PRO
I-V I-PRO
behavior I-PRO
is O
achieved O
, O
but O
at O
short O
channels O
, O
the O
sub B-PRO
threshold I-PRO
current I-PRO
opens O
up O
an O
oscillatory O
dependence O
on O
the O
gate O
voltage O
with O
a O
considerable O
amount O
of O
current O
of O
over O
10-6A O
. O


this O
is O
the O
characteristic B-PRO
current I-PRO
behavior I-PRO
of O
resonant B-APL
tunneling I-APL
transistors I-APL
that O
exhibit O
regions O
of O
negative B-PRO
differential I-PRO
resistance I-PRO
. O


the O
calculated O
discrete O
density B-PRO
of I-PRO
states I-PRO
in O
the O
channel O
attributes O
this O
behavior O
to O
the O
constructed O
n B-PRO
- I-PRO
type I-PRO
channel O
island O
between O
p B-PRO
- I-PRO
type I-PRO
source B-APL
and O
drain B-APL
with O
thin O
barriers O
formed O
by O
the O
energy B-PRO
gap I-PRO
. O


neutron B-CMT
diffraction I-CMT
and O
magnetic B-CMT
study I-CMT
of O
the O
Nd0.7Pb0.3Mn1- B-MAT
x I-MAT
Fe I-MAT
x I-MAT
O3 I-MAT
( I-MAT
0x0.1 I-MAT
) I-MAT
perovskites B-SPL


the O
effect O
of O
Fe B-MAT
doping B-SMT
on O
the O
ferromagnetic B-PRO
Nd0.7Pb0.3Mn1-xFexO3 B-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
) I-MAT
phases O
has O
been O
studied O
in O
order O
to O
analyze O
the O
double B-PRO
- I-PRO
exchange I-PRO
interaction I-PRO
. O


the O
structural B-PRO
and O
magnetic B-PRO
study O
has O
been O
carried O
out O
by O
neutron B-CMT
powder I-CMT
diffraction I-CMT
and O
susceptibility B-PRO
measurements O
between O
<nUm> O
and O
300K O
. O


the O
substitution O
of O
Fe B-MAT
at O
the O
Mn B-MAT
site O
results O
in O
reductions O
in O
both O
the O
curie B-PRO
temperature I-PRO
Tc I-PRO
and O
the O
magnetic B-PRO
moment I-PRO
per O
Mn B-MAT
ion O
without O
appreciable O
differences O
in O
the O
crystal B-PRO
structures I-PRO
. O


all O
the O
compounds O
crystallize O
in O
pnma B-SPL
space O
group O
. O


the O
thermal O
evolution O
of O
the O
lattice B-PRO
parameters I-PRO
of O
the O
Nd0.7Pb0.3Mn1-xFexO3 B-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
<nUm> I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
) I-MAT
compounds O
shows O
discontinuities O
in O
volume O
and O
lattice B-PRO
parameters I-PRO
close O
to O
the O
magnetic B-PRO
transition I-PRO
temperature I-PRO
. O


increasing O
amounts O
of O
fe3+ O
reduces O
the O
double B-PRO
exchange I-PRO
interactions I-PRO
and O
no O
magnetic B-PRO
contribution I-PRO
for O
x O
= O
<nUm> O
is O
observed O
. O


the O
magnetic B-PRO
structures I-PRO
of O
Nd0.7Pb0.3Mn1-xFexO3 B-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
) I-MAT
compounds O
show O
that O
the O
Nd B-MAT
and O
Mn B-MAT
ions O
are O
ferromagnetically B-PRO
ordered I-PRO
. O


structure B-SMT
- I-SMT
direct I-SMT
assembly I-SMT
of O
hexagonal B-SPL
pencil B-DSC
- I-DSC
like I-DSC
OZn B-MAT
group B-DSC
whiskers I-DSC


hexagonal B-SPL
OZn B-MAT
group B-DSC
whiskers I-DSC
synthesized O
from O
Zn(NH3)42+ O
precursor O
at O
<nUm> O
° O
C O
in O
a O
structure B-SMT
- I-SMT
directing I-SMT
template I-SMT
solvent I-SMT
( O
<nUm> O
% O
v O
/ O
v O
alcohol O
) O
show O
strong O
photoluminescence B-CMT
at O
<nUm> O
and O
<nUm> O
nm O
. O


FE B-CMT
- I-CMT
SEM I-CMT
and O
TEM B-CMT
observation O
reveals O
that O
the O
OZn B-MAT
group B-DSC
whiskers I-DSC
consist O
of O
uniform O
pencil B-DSC
- I-DSC
like I-DSC
whiskers I-DSC
with O
the O
diameter O
of O
around O
<nUm> O
mm O
and O
the O
length O
of O
up O
to O
<nUm> O
mm O
. O


A O
piezoelectric B-PRO
unimorph O
actuator B-APL
based O
tip-tilt-piston B-APL
micromirror I-APL
with O
high O
fill B-PRO
factor I-PRO
and O
small O
tilt B-PRO
and O
lateral B-PRO
shift I-PRO


this O
paper O
presents O
the O
design O
, O
fabrication O
and O
characterization O
of O
a O
piezoelectrically B-APL
actuated I-APL
high-fill-factor I-APL
tip-tilt-piston I-APL
( O
TTP B-APL
) O
micromirror B-APL
with O
small O
tilt B-PRO
and O
lateral B-PRO
shift I-PRO
during O
scanning O
. O


the O
piezoelectric B-PRO
material O
is O
a O
sol B-SMT
– I-SMT
gel I-SMT
lead B-MAT
zirconate I-MAT
titanate I-MAT
( O
PZT B-MAT
) O
thin B-DSC
film I-DSC
with O
a O
Zr B-PRO
/ I-PRO
Ti I-PRO
ratio I-PRO
of O
<nUm> O
/ O
<nUm> O
. O


the O
small O
initial O
tilt B-PRO
and O
lateral B-PRO
- I-PRO
shift I-PRO
- I-PRO
free I-PRO
( O
LSF B-PRO
) O
of O
the O
mirror B-APL
plate I-APL
is O
achieved O
by O
a O
folded O
, O
three O
- O
segment O
piezoelectric B-APL
unimorph I-APL
actuator I-APL
design O
. O


the O
piezoelectric B-APL
unimorph I-APL
actuation I-APL
beams I-APL
consist O
of O
Pt B-MAT
/ O
Ti B-MAT
/ O
PZT B-MAT
/ O
Pt B-MAT
/ O
Ti B-MAT
/ O
O2Si B-MAT
multilayers B-DSC
, O
which O
are O
released O
via O
undercutting O
the O
substrate B-DSC
silicon B-MAT
. O


the O
fabricated O
piezoelectric B-APL
micromirror I-APL
can O
be O
actuated O
about O
two O
rotational O
axes O
in O
the O
mirror O
plane O
and O
for O
translational O
vertical O
scan O
( O
piston B-APL
actuation I-APL
) O
. O


the O
resonant B-PRO
frequencies I-PRO
of O
the O
piston B-APL
and O
rotation B-PRO
modes I-PRO
are O
<nUm> O
Hz O
and O
<nUm> O
Hz O
, O
respectively O
. O


At O
their O
respective O
resonant B-PRO
frequencies I-PRO
, O
the O
maximum O
piston B-PRO
magnitude I-PRO
at O
resonant O
driving O
is O
<nUm> O
mm O
, O
and O
the O
two B-PRO
- I-PRO
dimensional I-PRO
rotating I-PRO
scan I-PRO
ranges I-PRO
are O
about O
<nUm> O
° O
, O
both O
measured O
at O
a O
2Vpp O
sinusoidal O
driving O
voltage O
. O


temperature O
effect O
on O
low O
cycle B-PRO
fatigue I-PRO
behavior I-PRO
of O
Sn B-MAT
– I-MAT
Pb I-MAT
eutectic B-APL
solder I-APL


low O
cycle O
fatigue B-CMT
tests I-CMT
on O
as-cast B-DSC
Sn B-MAT
– I-MAT
Pb I-MAT
eutectic B-APL
solder I-APL
( O
63Sn B-MAT
– I-MAT
37Pb I-MAT
) O
were O
carried O
out O
under O
various O
temperatures O
( O
<nUm> O
, O
<nUm> O
, O
<nUm> O
° O
C O
) O
. O


the O
relationship O
between O
stress O
range O
and O
inverse O
temperature O
followed O
the O
dorn B-CMT
's I-CMT
equation I-CMT
with O
the O
activation B-PRO
energy I-PRO
in O
the O
range O
of O
<nUm> O
– O
<nUm> O
kJ O
/ O
mol O
. O


multiple O
surface O
cracks O
and O
propagating O
cracks O
predominantly O
occurred O
in O
an O
intergranular O
manner O
along O
the O
colony O
boundaries O
. O


propagation O
of O
a O
stage O
II O
crack O
at O
various O
temperatures O
could O
be O
characterized O
by O
C* B-PRO
- I-PRO
parameter I-PRO
. O


high O
- O
temperature O
tensile B-PRO
properties I-PRO
of O
Mg B-MAT
/ O
Al2O3 B-MAT
nanocomposite B-DSC


Mg B-MAT
/ O
1.1Al2O3 B-MAT
nanocomposite B-DSC
was O
synthesized O
using O
solidification B-SMT
process I-SMT
called O
disintegrated B-SMT
melt I-SMT
deposition I-SMT
technique I-SMT
followed O
by O
hot B-SMT
extrusion I-SMT
. O


microstructural B-CMT
characterization I-CMT
showed O
that O
reasonably O
uniform O
distribution O
of O
reinforcement O
leads O
to O
significant O
grain B-PRO
refinement I-PRO
of O
commercially O
pure B-DSC
magnesium B-MAT
matrix B-DSC
and O
effectively O
restricted O
the O
grain O
growth O
during O
high O
- O
temperature O
tensile B-CMT
test I-CMT
. O


physical B-PRO
properties I-PRO
characterization O
revealed O
that O
addition O
of O
nano-Al2O3 B-MAT
particulates B-DSC
as O
reinforcement O
improves O
the O
dimensional B-PRO
stability I-PRO
of O
pure O
magnesium B-MAT
. O


mechanical B-PRO
properties I-PRO
characterization O
revealed O
that O
the O
presence O
of O
thermally B-PRO
stable I-PRO
nano-Al2O3 B-MAT
particulates B-DSC
as O
reinforcement O
leads O
to O
a O
significant O
increase O
in O
room O
temperature O
microhardness B-PRO
, O
dynamic B-PRO
elastic I-PRO
modulus I-PRO
, O
<nUm> B-PRO
% I-PRO
yield I-PRO
strength I-PRO
, O
UTS B-PRO
and O
ductility B-PRO
of O
pure O
magnesium B-MAT
and O
efficiently O
maintained O
the O
strengthening B-PRO
effect I-PRO
up O
to O
<nUm> O
° O
C O
. O


fractography B-CMT
revealed O
that O
fracture B-PRO
behavior I-PRO
of O
magnesium B-MAT
matrix B-DSC
change O
from O
brittle B-PRO
to O
mixed O
ductile B-PRO
mode I-PRO
with O
activation O
of O
non-basal O
slip O
system O
in O
room O
temperature O
to O
complete O
ductile B-PRO
mode O
at O
high O
temperature O
due O
to O
the O
presence O
of O
nano-Al2O3 B-MAT
particulates B-DSC
. O


structure B-PRO
of O
alkali O
or O
alkaline B-MAT
earth I-MAT
metal I-MAT
gallate I-MAT
glasses B-DSC


the O
structure B-PRO
of O
30Cs2O*70Ga2O3 B-MAT
and O
66.7CaO*33.3Ga2O3 B-MAT
glasses B-DSC
is O
investi- O
gated O
by O
x-ray B-CMT
diffraction I-CMT
and O
molar B-CMT
volume I-CMT
measurement I-CMT
. O


In O
the O
30Cs2O* B-MAT
70Ga2O3 I-MAT
glass B-DSC
, O
the O
main O
portion O
of O
ga3+ O
ions O
forms O
GaO4 B-MAT
tetrahedra O
. O


the O
structural B-PRO
parameter I-PRO
of O
this O
glass B-DSC
is O
similar O
to O
that O
of O
Li2O- B-MAT
, O
Na2O- B-MAT
, O
CaO- B-MAT
, O
SrO- B-MAT
and O
BaO-Ga2O3 B-MAT
crystals B-DSC
rather O
than O
to O
Cs2O-Ga2O3 B-MAT
crystal B-DSC
. O


the O
gallium B-MAT
ions O
are O
coordinated O
by O
four O
oxygens O
in O
the O
66.7CaO*33.3Ga2O3 B-MAT
glass B-DSC
and O
the O
structure B-PRO
of O
the O
glass B-DSC
is O
expressed O
by O
layer B-DSC
structures B-PRO
consisting O
of O
five O
- O
membered O
rings O
of O
GaO4 B-MAT
tetrahedra O
. O


the O
average O
Ga-O-Ga B-PRO
angle I-PRO
is O
about O
<nUm> O
degree O
. O


electron B-PRO
effective I-PRO
mass I-PRO
and O
nonparabolicity B-PRO
in O
AsGaIn B-MAT
/ O
AlAsIn B-MAT
quantum B-APL
wells I-APL
lattice O
- O
matched O
to O
InP B-MAT


nonparabolic B-PRO
electron I-PRO
effective I-PRO
masses I-PRO
in O
AsGaIn B-MAT
quantum B-APL
wells I-APL
( O
QWs B-APL
) O
, O
sandwiched O
by O
thick O
AlAsIn B-MAT
barriers O
of O
0.52- O
eV O
band B-PRO
offset I-PRO
, O
were O
studied O
in O
normal O
and O
parallel O
directions O
to O
the O
QW B-APL
plane O
. O


the O
normal B-PRO
mass I-PRO
was O
experimentally O
obtained O
by O
observing O
interband B-CMT
photocurrent I-CMT
spectra I-CMT
of O
undoped O
AsGaIn B-MAT
multi-QW B-APL
structures O
. O


the O
mass B-PRO
increased O
by O
more O
than O
<nUm> O
% O
from O
the O
bulk B-DSC
band B-PRO
edge I-PRO
mass I-PRO
, O
<nUm> O
m0 O
. O


electron B-PRO
eigenenergies I-PRO
were O
calculated O
in O
QWs B-APL
based O
on O
kane B-CMT
's I-CMT
three I-CMT
- I-CMT
level I-CMT
band I-CMT
theory I-CMT
. O


the O
calculated O
‘ O
apparent O
’ O
normal B-PRO
mass I-PRO
as O
a O
function O
of O
kinetic O
energy O
up O
to O
0.5eV O
agreed O
well O
with O
experiments O
. O


the O
parallel B-PRO
mass I-PRO
in O
n B-PRO
- I-PRO
type I-PRO
modulation B-DSC
- I-DSC
doped I-DSC
AsGaIn B-MAT
QWs B-APL
was O
experimentally O
obtained O
by O
pulse B-CMT
cyclotron I-CMT
resonance I-CMT
up O
to O
100T O
. O


the O
analysis O
in O
quantizing O
magnetic O
fields O
, O
modified O
for O
two B-DSC
- I-DSC
dimensional I-DSC
QWs B-APL
, O
fits O
well O
with O
cyclotron B-PRO
energy I-PRO
. O


the O
‘ O
apparent O
’ O
parallel B-PRO
mass I-PRO
as O
a O
function O
of O
energy O
was O
obtained O
consistently O
. O


Ca B-MAT
- O
induced O
surface B-PRO
reconstructions I-PRO
on O
TiO2(110) B-MAT
studied O
by O
scanning B-CMT
tunneling I-CMT
microscopy I-CMT
, O
reflection B-CMT
high I-CMT
- I-CMT
energy I-CMT
electron I-CMT
diffraction I-CMT
and O
atomistic B-CMT
simulation I-CMT


we O
have O
prepared O
and O
investigated O
Ca B-MAT
- O
induced O
surface B-PRO
reconstructions I-PRO
on O
TiO2(110) B-MAT
. O


experimental O
investigations O
were O
carried O
out O
by O
scanning B-CMT
tunneling I-CMT
microscopy I-CMT
( O
STM B-CMT
) O
, O
reflection B-CMT
high I-CMT
- I-CMT
energy I-CMT
electron I-CMT
diffraction I-CMT
, O
low B-CMT
- I-CMT
energy I-CMT
electron I-CMT
diffraction I-CMT
and O
auger B-CMT
electron I-CMT
spectroscopy I-CMT
. O


atomistic B-CMT
simulation I-CMT
was O
used O
to O
study O
the O
segregation B-PRO
behaviour I-PRO
of O
calcium B-MAT
and O
to O
calculate O
the O
surface B-PRO
structure I-PRO
. O


In O
good O
agreement O
between O
experiment O
and O
calculations O
the O
( B-PRO
<nUm> I-PRO
× I-PRO
<nUm> I-PRO
) I-PRO
surface I-PRO
reconstruction I-PRO
was O
found O
to O
consist O
of O
elevated O
ca2+ O
ions O
in O
the O
top O
layer O
of O
the O
surface B-DSC
. O


this O
strongly O
suggests O
that O
the O
STM B-CMT
contrast O
is O
mainly O
of O
geometric O
origin O
. O


after O
further O
oxygen O
loss O
trenches O
are O
formed O
on O
the O
surface B-DSC
which O
can O
be O
described O
as O
a O
disordered O
( B-PRO
<nUm> I-PRO
× I-PRO
<nUm> I-PRO
) I-PRO
reconstruction I-PRO
. O


though O
energy B-CMT
calculations I-CMT
did O
not O
show O
a O
significant O
energy O
gain O
by O
forming O
the O
trench O
structure O
it O
is O
suggested O
that O
oxygen O
loss O
and O
subsequent O
elastic B-PRO
interaction I-PRO
contribute O
to O
their O
formation O
. O


correlation O
between O
irreversibility B-PRO
magnetic I-PRO
fields I-PRO
and O
the O
longest O
CuO B-MAT
layer B-PRO
spacing I-PRO
in O
high-T B-PRO
c I-PRO
superconductors I-PRO


thin B-DSC
films I-DSC
of O
the O
( O
<nUm> O
) O
phase O
of O
the O
TlSrCaCuO B-MAT
system O
( O
Tl O
- O
( O
<nUm> O
) O
, O
single O
TlO O
layer O
) O
and O
the O
( O
<nUm> O
) O
phase O
of O
the O
TlBaCaCuO B-MAT
system O
( O
Tl O
- O
( O
<nUm> O
) O
, O
double O
TlO O
layers O
) O
were O
prepared O
by O
the O
laser B-SMT
ablation I-SMT
method I-SMT
. O


the O
irreversibility B-PRO
magnetic I-PRO
field I-PRO
( O
ifH* B-PRO
) O
obtained O
from O
the O
resistivity B-PRO
change O
in O
magnetic O
fields O
were O
found O
to O
be O
<nUm> O
T O
and O
<nUm> O
T O
at O
T O
/ O
Tc O
= O
<nUm> O
for O
Tl O
- O
( O
<nUm> O
) O
and O
Tl O
- O
( O
<nUm> O
) O
, O
respectively O
. O


the O
H* B-PRO
of O
high B-PRO
Tc I-PRO
- I-PRO
superconductors I-PRO
including O
YBaCuO B-MAT
and O
biSrCaCuO B-MAT
systems O
are O
shown O
to O
depend O
strongly O
on O
the O
longest O
CuO B-MAT
layer B-PRO
spacing I-PRO
( O
d B-PRO
) O
, O
i.e. O
the O
H* B-PRO
decreases O
in O
the O
order O
, O
Y-(1223) O
> O
Tl O
- O
( O
<nUm> O
) O
> O
Tl O
- O
( O
<nUm> O
) O
> O
bi-(2212) O
. O


the O
phenomenon O
may O
be O
the O
result O
of O
josephson O
weak O
coupling O
between O
the O
superconducting B-PRO
CuO B-MAT
layers B-DSC
. O


it O
seems O
that O
the O
longest O
CuO B-MAT
interlayer B-PRO
spacing I-PRO
determines O
the O
H* B-PRO
for O
a O
magnetic O
field O
applied O
perpendicular O
to O
the O
a O
− O
b O
plane O
. O


perturbed B-CMT
angular I-CMT
correlation I-CMT
study O
of O
181Ta B-MAT
- O
doped B-DSC
PbTi1-x B-MAT
Hf I-MAT
x I-MAT
O3 I-MAT
compounds O


In O
this O
work O
, O
the O
hyperfine B-PRO
quadrupole I-PRO
interaction I-PRO
at O
Ta B-MAT
- O
doped B-DSC
PbTi1-xHfxO3 B-MAT
polycrystalline B-DSC
samples O
is O
studied O
for O
the O
first O
time O
. O


powders B-DSC
with O
x O
= O
<nUm> O
, O
<nUm> O
and O
<nUm> O
were O
prepared O
and O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
analysis O
. O


perturbed B-CMT
angular I-CMT
correlation I-CMT
( O
PAC B-CMT
) O
analyses O
were O
done O
as O
a O
function O
of O
temperature O
, O
using O
low O
concentration O
181Ta B-MAT
nuclei O
as O
probes O
. O


In O
the O
ferroelectric B-PRO
and O
paraelectric B-PRO
phases I-PRO
of O
these O
compounds O
two O
sites O
were O
occupied O
by O
the O
probes O
. O


for O
each O
site O
the O
quadrupole B-PRO
frequency I-PRO
, O
asymmetry B-PRO
and O
relative B-PRO
distribution I-PRO
width I-PRO
parameters I-PRO
were O
obtained O
as O
a O
function O
of O
temperature O
above O
and O
below O
the O
curie B-PRO
temperature I-PRO
( O
TC B-PRO
) O
. O


one O
of O
these O
sites O
was O
assigned O
to O
the O
regular O
Ti B-MAT
– O
Hf B-MAT
site O
, O
while O
the O
other O
one O
was O
assigned O
to O
some O
kind O
of O
defect O
. O


the O
behavior O
of O
the O
hyperfine B-PRO
parameters I-PRO
as O
a O
function O
of O
temperature O
was O
analyzed O
in O
terms O
of O
a O
recent O
published O
phase B-PRO
diagram I-PRO
and O
the O
presence O
of O
disorder O
below O
and O
above O
TC B-PRO
. O


for O
the O
three O
compositions B-PRO
measured O
, O
the O
obtained O
hyperfine B-PRO
parameters I-PRO
present O
discontinuities O
which O
correspond O
to O
the O
ferroelectric B-PRO
– I-PRO
paraelectric I-PRO
phase I-PRO
transition I-PRO
. O


In O
both O
phases O
it O
was O
found O
broad O
frequency O
distributed O
interactions O
. O


the O
disorder O
in O
the O
electronic B-PRO
distribution I-PRO
would O
be O
responsible O
for O
the O
broad O
line O
width O
of O
the O
hyperfine B-PRO
interaction I-PRO
. O


an O
in O
situ O
study O
of O
zirconium B-MAT
- O
based O
conversion B-SMT
treatment I-SMT
on O
zinc B-MAT
surfaces B-DSC


this O
study O
is O
focused O
on O
the O
deposition O
process O
of O
zirconium B-MAT
- O
based O
conversion B-APL
layers I-APL
on O
Zn B-MAT
surfaces B-DSC
. O


the O
analysis O
approach O
is O
based O
on O
a O
kretschmann B-CMT
configuration I-CMT
in O
which O
in O
situ O
ATR B-CMT
- I-CMT
FTIR I-CMT
spectroscopy I-CMT
is O
combined O
with O
open B-PRO
circuit I-PRO
potential I-PRO
( O
OCP B-PRO
) O
and O
near B-PRO
surface I-PRO
pH I-PRO
measurements O
. O


differently O
pretreated O
Zn B-MAT
surfaces B-DSC
were O
subjected O
to O
conversion B-SMT
treatments I-SMT
, O
while O
the O
Zr B-MAT
- O
based O
deposition O
mechanism O
was O
probed O
in O
situ O
. O


it O
was O
found O
that O
the O
initial O
hydroxyl O
fraction O
promotes O
the O
overall O
Zr B-MAT
conversion O
process O
as O
the O
near B-PRO
surface I-PRO
pH I-PRO
values O
are O
influenced O
by O
the O
initial O
hydroxyl O
fraction O
. O


kinetics O
of O
the O
early O
surface B-PRO
activation I-PRO
and O
the O
subsequent O
Zr B-MAT
- O
based O
conversion O
process O
are O
discussed O
and O
correlated O
to O
the O
initial O
hydroxyl O
fractions O
. O


effects O
of O
Nd2O3 B-MAT
on O
the O
mechanical B-PRO
properties I-PRO
and O
oxidation B-PRO
behavior I-PRO
of O
Ti B-MAT
/ O
Al2O3 B-MAT
composites B-DSC
by O
vacuum B-SMT
hot I-SMT
pressing I-SMT
sintering I-SMT


A O
range O
of O
Ti B-MAT
/ O
Al2O3 B-MAT
composites B-DSC
with O
different O
Nd2O3 B-PRO
content I-PRO
( O
<nUm> O
– O
<nUm> O
vol. O
% O
) O
were O
fabricated O
by O
vacuum B-SMT
hot I-SMT
pressing I-SMT
sintering I-SMT
at O
<nUm> O
° O
C O
for O
<nUm> O
h O
under O
the O
pressure O
of O
<nUm> O
MPa O
. O


the O
sintered B-SMT
samples O
with O
Nd2O3 B-MAT
additives O
exhibited O
more O
superior O
performances O
than O
those O
without O
additives O
. O


when O
<nUm> O
vol. O
% O
Nd2O3 B-MAT
was O
added O
, O
Ti B-MAT
/ O
Al2O3 B-MAT
composite B-DSC
showed O
optimal O
density B-PRO
( O
relative B-PRO
density I-PRO
of O
<nUm> O
% O
) O
, O
hardness B-PRO
( O
vickers B-PRO
hardness I-PRO
of O
<nUm> O
GPa O
) O
, O
strength B-PRO
( O
flexural B-PRO
strength I-PRO
of O
<nUm> O
MPa O
) O
, O
toughness B-PRO
( O
fracture B-PRO
toughness I-PRO
of O
<nUm> O
MPa O
m1 O
/ O
<nUm> O
) O
and O
oxidation B-PRO
resistance I-PRO
( O
oxidation B-PRO
depth I-PRO
of O
∼ O
<nUm> O
mm O
) O
. O


however O
, O
excessive O
additive O
( O
>3.0 O
vol. O
% O
) O
would O
weaken O
these O
positive O
effects O
. O


SEM B-CMT
results O
revealed O
that O
the O
superior O
performances O
could O
be O
attributed O
to O
the O
grain O
refinement O
and O
microstructure B-PRO
densification B-SMT
. O


moreover O
, O
plate B-PRO
- I-PRO
like I-PRO
grains I-PRO
were O
found O
at O
the O
interface B-DSC
and O
additional O
experiments O
demonstrated O
that O
their O
formation O
was O
caused O
by O
enrichment O
of O
Nd B-MAT
element O
, O
which O
is O
beneficial O
to O
the O
microstructure B-PRO
densification B-SMT
. O


A O
new O
perovskite B-SPL
- O
type O
oxide B-MAT
(BaLa)(MgMn)O6-x I-MAT
( I-MAT
x[?]0.21 I-MAT
) I-MAT
prepared O
under O
high O
oxygen O
pressure O
and O
its O
physico B-CMT
- I-CMT
chemical I-CMT
characterization I-CMT


A O
new O
cubic B-SPL
perovskite I-SPL
compound O
BaLaMgMnO6-x B-MAT
has O
been O
prepared O
under O
high O
temperature O
( O
<nUm> O
° O
C O
) O
and O
high O
oxygen O
pressure O
( O
<nUm> O
– O
<nUm> O
kbar O
) O
using O
in O
situ O
thermal B-SMT
decomposition I-SMT
of O
ClKO3 B-MAT
in O
a O
belt B-SMT
apparatus I-SMT
. O


X-Ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
redox B-CMT
titration I-CMT
, O
thermogravimetric B-CMT
analysis I-CMT
( O
TGA B-CMT
) O
, O
and O
x-ray B-CMT
photoelectron I-CMT
( O
XPE B-CMT
) O
spectroscopy O
investigation O
have O
shown O
that O
x O
is O
close O
to O
<nUm> O
under O
these O
synthetic O
conditions O
. O


Mn(V) B-MAT
in O
octahedral O
coordination O
could O
be O
postulated O
. O


origin O
of O
high O
temperature O
oxidation B-PRO
resistance I-PRO
of O
Ti B-MAT
– I-MAT
Al I-MAT
– I-MAT
Ta I-MAT
– I-MAT
N I-MAT
coatings B-APL


alloying O
Ti B-MAT
– I-MAT
Al I-MAT
– I-MAT
N I-MAT
coatings B-APL
with O
Ta B-MAT
has O
proven O
to O
enhance O
their O
hardness B-PRO
, O
thermal B-PRO
stability I-PRO
, O
and O
oxidation B-PRO
resistance I-PRO
. O


however O
, O
especially O
for O
arc B-SMT
- I-SMT
evaporated I-SMT
Ti B-MAT
– I-MAT
Al I-MAT
– I-MAT
Ta I-MAT
– I-MAT
N I-MAT
coatings B-APL
only O
limited O
information O
on O
the O
detailed O
influence O
of O
the O
elements O
on O
various O
properties O
is O
available O
. O


therefore O
, O
we O
have O
developed O
arc B-SMT
- I-SMT
evaporated I-SMT
ti1-x B-MAT
− I-MAT
yAlxTayN I-MAT
coatings B-APL
with O
various O
Al B-MAT
( O
x O
= O
<nUm> O
– O
<nUm> O
) O
and O
Ta B-MAT
( O
y O
= O
<nUm> O
– O
<nUm> O
) O
contents O
. O


while O
the O
thermal B-PRO
stability I-PRO
of O
our O
coatings B-APL
during O
annealing B-SMT
in O
inert O
He O
atmosphere O
increases O
with O
increasing O
Ta B-MAT
content O
, O
best O
results O
are O
obtained O
for O
specific O
Ta B-PRO
– I-PRO
Al I-PRO
ratios I-PRO
during O
oxidation B-SMT
. O


single B-DSC
phase I-DSC
cubic B-SPL
Al15N25Ta2Ti8 B-MAT
yields O
a O
mass O
- O
gain O
of O
only O
~ O
<nUm> O
% O
after O
5h O
at O
<nUm> O
° O
C O
in O
synthetic O
air O
, O
whereas O
Al13N20Ti7 B-MAT
is O
completely O
oxidized O
after O
<nUm> O
min O
. O


this O
is O
in O
part O
based O
on O
the O
suppressed O
anatase B-SPL
and O
direct O
rutile B-SPL
O2Ti B-MAT
formation O
at O
a O
defined O
Ta B-PRO
– I-PRO
Al I-PRO
content I-PRO
. O


consequently O
, O
the O
anatase B-SPL
- O
to O
- O
rutile B-SPL
transformation O
, O
generally O
observed O
for O
Ti1-xAlxN B-MAT
, O
is O
absent O
. O


this O
reduces O
the O
generation O
of O
pores O
and O
cracks O
within O
the O
oxide B-MAT
scale O
and O
especially O
at O
the O
nitride B-MAT
– O
oxide B-MAT
interface B-DSC
, O
leading O
to O
the O
formation O
of O
a O
protective O
rutile B-SPL
and O
corundum B-MAT
based O
oxide B-MAT
scale O
. O


this O
is O
also O
reflected O
in O
the O
pronounced O
decrease O
in O
activation B-PRO
energy I-PRO
for O
the O
protective O
scale O
formation O
from O
<nUm> O
kJ O
/ O
mol O
for O
Al13N20Ti7 B-MAT
down O
to O
<nUm> O
kJ O
/ O
mol O
for O
Al15N25Ta2Ti8 B-MAT
. O


based O
on O
our O
results O
we O
can O
conclude O
that O
especially O
phase O
transformations O
within O
the O
oxide B-MAT
scale O
need O
to O
be O
suppressed O
, O
as O
the O
connected O
volume O
changes O
lead O
to O
the O
formation O
of O
cracks O
and O
pores O
. O


A O
novel O
method O
for O
fabricating O
Fe B-MAT
nanobelts B-DSC


free O
- O
standing O
, O
ultralong O
( O
up O
to O
<nUm> O
mm O
) O
Fe B-MAT
nanobelts B-DSC
were O
fabricated O
by O
a O
novel O
method O
. O


this O
method O
is O
based O
on O
the O
fact O
that O
the O
solubility O
of O
iron B-MAT
in O
copper B-MAT
is O
very O
low O
. O


the O
Fe B-MAT
nanobelts B-DSC
are O
formed O
in O
copper B-MAT
matrix B-DSC
by O
forging B-SMT
and O
wire B-SMT
drawing I-SMT
, O
followed O
by O
a O
phase O
separation O
through O
selective O
etching B-SMT
of O
the O
copper B-MAT
matrix B-DSC
to O
release O
Fe B-MAT
nanobelts B-DSC
from O
the O
matrix B-DSC
. O


the O
Fe B-MAT
nanobelts B-DSC
have O
an O
average O
thickness O
of O
<nUm> O
– O
<nUm> O
nm O
, O
a O
width O
of O
<nUm> O
– O
<nUm> O
nm O
, O
exhibiting O
width O
- O
to O
- O
thickness O
ratio O
of O
<nUm> O
– O
<nUm> O
. O


the O
Fe B-MAT
nanobelts B-DSC
have O
high O
remanence B-PRO
, O
relatively O
high O
coercivity B-PRO
and O
shape B-PRO
anisotropy I-PRO
. O


conduction B-PRO
mechanisms I-PRO
in O
O5Ta2 B-MAT
stack O
in O
response O
to O
rapid B-SMT
thermal I-SMT
annealing I-SMT


the O
influence O
of O
the O
rapid B-SMT
thermal I-SMT
annealing I-SMT
( O
RTA B-SMT
) O
in O
vacuum O
at O
<nUm> O
° O
C O
on O
the O
leakage B-PRO
current I-PRO
characteristics I-PRO
and O
conduction B-PRO
mechanisms I-PRO
in O
thermal O
O5Ta2 B-MAT
( O
<nUm> O
– O
<nUm> O
nm O
) O
on O
Si B-MAT
has O
been O
studied O
. O


it O
was O
established O
that O
the O
effect O
of O
RTA B-SMT
depends O
on O
both O
the O
initial O
parameters O
of O
the O
films B-DSC
( O
defined O
by O
the O
oxidation B-SMT
temperature O
and O
film B-DSC
thickness O
) O
and O
annealing B-SMT
time O
( O
<nUm> O
– O
60s O
) O
. O


the O
RTA B-SMT
tends O
to O
change O
the O
distribution O
and O
the O
density O
of O
the O
traps O
in O
stack O
, O
and O
this O
reflects O
on O
the O
dielectric B-PRO
and O
leakage B-PRO
properties I-PRO
. O


the O
thinner O
the O
film B-DSC
and O
the O
poorer O
the O
oxidation B-SMT
, O
the O
more O
susceptible O
the O
layer O
to O
heating B-SMT
. O


the O
short O
( O
15s O
) O
annealing B-SMT
is O
effective O
in O
improving O
the O
leakage B-PRO
characteristics I-PRO
of O
poorly O
oxidized B-SMT
samples O
. O


the O
RTA B-SMT
effect O
, O
however O
, O
is O
rather O
deleterious O
than O
beneficial O
, O
for O
the O
thinner O
layers B-DSC
with O
good O
oxygen B-PRO
stoichiometry I-PRO
. O


RTA B-SMT
modifies O
the O
conduction B-PRO
mechanism I-PRO
of O
O5Ta2 B-MAT
films B-DSC
only O
in O
the O
high O
- O
field O
region O
. O


the O
annealing B-SMT
time O
has O
strong O
impact O
on O
the O
appearance O
of O
a O
certain O
type O
of O
reactions O
upon O
annealing B-SMT
resulting O
to O
variation O
of O
the O
ratio O
between O
donors O
and O
traps O
into O
O5Ta2 B-MAT
, O
causing O
different O
degree O
of O
compensation O
, O
and O
consequently O
to O
domination O
of O
one O
of O
the O
two O
mechanisms O
at O
high O
fields O
( O
schottky B-PRO
emission I-PRO
or O
poole B-PRO
– I-PRO
frenkel I-PRO
effect I-PRO
) O
. O


trends O
associated O
with O
simultaneous O
action O
of O
annealing B-SMT
and O
generation O
of O
traps O
during O
RTA B-SMT
processing O
, O
and O
respectively O
the O
domination O
of O
one O
of O
them O
, O
are O
discussed O
. O


rapid O
fabrication O
of O
superhydrophobic B-PRO
Al B-MAT
/ O
Fe2O3 B-MAT
nanothermite B-DSC
film I-DSC
with O
excellent O
energy B-PRO
- I-PRO
release I-PRO
characteristics I-PRO
and O
long B-PRO
- I-PRO
term I-PRO
storage I-PRO
stability I-PRO


one O
of O
the O
challenges O
for O
the O
application O
of O
energetic O
materials O
is O
their O
energy B-PRO
- I-PRO
retaining I-PRO
capabilities I-PRO
after O
long O
- O
term O
storage O
. O


In O
this O
study O
, O
we O
report O
a O
facile O
method O
to O
fabricate O
superhydrophobic B-PRO
Al B-MAT
/ O
Fe2O3 B-MAT
nanothermite B-DSC
film I-DSC
by O
combining O
electrophoretic B-SMT
deposition I-SMT
and O
surface B-SMT
modification I-SMT
technologies O
. O


different O
concentrations O
of O
dispersion O
solvents O
and O
additives O
are O
investigated O
to O
optimize O
the O
deposition O
parameters O
. O


meanwhile O
, O
the O
dependence O
of O
deposition O
rates O
on O
nanoparticle B-DSC
concentrations O
is O
also O
studied O
. O


the O
surface B-PRO
morphology I-PRO
and O
chemical B-PRO
composition I-PRO
are O
characterized O
by O
field B-CMT
- I-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
, O
x-ray B-CMT
diffraction I-CMT
, O
x-ray B-CMT
energy I-CMT
- I-CMT
dispersive I-CMT
spectroscopy I-CMT
, O
and O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
. O


A O
static B-PRO
contact I-PRO
angles I-PRO
as O
high O
as O
<nUm> O
° O
shows O
the O
superhydrophobicity B-PRO
of O
the O
nanothermite B-DSC
film I-DSC
. O


natural O
and O
accelerated O
aging B-SMT
tests O
are O
performed O
and O
the O
thermal B-PRO
behavior I-PRO
is O
analyzed O
. O


thermal B-CMT
analysis I-CMT
shows O
that O
the O
surface B-SMT
modification I-SMT
contributes O
to O
significantly O
improved O
energy B-PRO
- I-PRO
release I-PRO
characteristics I-PRO
for O
both O
fresh O
and O
aged B-SMT
samples O
, O
which O
is O
supposed O
to O
be O
attributed O
to O
the O
preignition O
reaction O
between O
Al2O3 B-MAT
shell B-DSC
and O
FAS-17 B-MAT
. O


superhydrophobic B-PRO
Al B-MAT
/ O
Fe2O3 B-MAT
nanothermite B-DSC
film I-DSC
exhibits O
excellent O
long B-PRO
- I-PRO
time I-PRO
storage I-PRO
stability I-PRO
with O
<nUm> O
% O
of O
energy O
left O
in O
natural B-CMT
aging I-CMT
test I-CMT
and O
<nUm> O
% O
in O
accelerated B-CMT
aging I-CMT
test I-CMT
. O


this O
study O
is O
instructive O
to O
the O
practical O
applications O
of O
nanothermites B-DSC
, O
especially O
in O
highly O
humid O
environment O
. O


A O
DFT B-CMT
study O
of O
the O
perovskite B-SPL
and O
hexagonal B-SPL
phases O
of O
BaO3Ti B-MAT


A O
geometry O
optimisation O
of O
the O
perovskite B-SPL
and O
hexagonal B-SPL
phases O
of O
BaO3Ti B-MAT
has O
been O
conducted O
using O
density B-CMT
functional I-CMT
theory I-CMT
( O
DFT B-CMT
) O
within O
the O
local B-CMT
density I-CMT
approximation I-CMT
( O
LDA B-CMT
) O
and O
generalised B-CMT
gradient I-CMT
approximation I-CMT
( O
GGA B-CMT
) O
schemes O
. O


the O
LDA B-CMT
was O
found O
to O
give O
lattice B-PRO
parameters I-PRO
closer O
to O
experiment O
than O
the O
GGA B-CMT
. O


A O
study O
of O
oxygen O
vacancies O
in O
the O
hexagonal B-SPL
phase O
has O
been O
performed O
and O
the O
results O
suggest O
an O
O(1) O
type O
( O
face O
sharing O
) O
vacancy O
is O
more O
stable O
than O
an O
O(2) O
type O
( O
corner O
sharing O
) O
vacancy O
in O
the O
octahedral O
structure O
. O


In O
addition O
, O
the O
effect O
of O
different O
Ru B-MAT
doping O
concentrations O
on O
the O
structure B-PRO
and O
stability B-PRO
of O
the O
hexagonal B-SPL
phase O
has O
been O
investigated O
. O


A O
theoretical O
analysis O
of O
the O
effect O
of O
the O
hydrogenation B-SMT
of O
graphene B-MAT
to O
graphane B-MAT
on O
its O
mechanical B-PRO
properties I-PRO


we O
investigated O
the O
effect O
of O
the O
hydrogenation B-SMT
of O
graphene B-MAT
to O
graphane B-MAT
on O
its O
mechanical B-PRO
properties I-PRO
using O
first B-CMT
- I-CMT
principles I-CMT
calculations I-CMT
based O
on O
density B-CMT
- I-CMT
functional I-CMT
theory I-CMT
. O


the O
hydrogenation B-SMT
reduces O
the O
ultimate B-PRO
strengths I-PRO
in O
all O
three O
tested O
deformation B-PRO
modes I-PRO
– O
armchair O
, O
zigzag O
, O
and O
biaxial O
– O
and O
the O
in-plane B-PRO
stiffness I-PRO
by O
<nUm> O
/ O
<nUm> O
. O


the O
poisson B-PRO
ratio I-PRO
was O
reduced O
from O
<nUm> O
to O
<nUm> O
, O
a O
<nUm> O
% O
decrease O
. O


however O
, O
the O
ultimate O
strain O
in O
zigzag O
deformation O
was O
increased O
by O
<nUm> O
% O
. O


the O
shear B-PRO
mode I-PRO
elastic I-PRO
constants I-PRO
are O
more O
sensitive O
than O
longitudinal O
ones O
to O
hydrogenation B-SMT
. O


the O
fourth O
and O
fifth B-PRO
order I-PRO
longitudinal I-PRO
mode I-PRO
elastic I-PRO
constants I-PRO
are O
inert O
to O
the O
hydrogenation B-SMT
, O
in O
contrast O
to O
a O
large O
decrease O
of O
those O
in O
second O
and O
third O
order O
. O


the O
hydrogenation B-SMT
does O
not O
change O
the O
monotonic O
decrement O
of O
the O
poisson B-PRO
ratio I-PRO
with O
increasing O
pressure O
, O
but O
the O
rate O
is O
tripled O
. O


our O
results O
indicate O
that O
graphene B-MAT
– O
graphane B-MAT
systems O
could O
be O
used O
for O
hydrogen B-APL
storage I-APL
with O
high O
speed O
of O
charge B-PRO
– I-PRO
discharge I-PRO
of I-PRO
hydrogen I-PRO
. O


plain B-PRO
fatigue I-PRO
and O
fretting B-PRO
fatigue I-PRO
behaviour I-PRO
of O
plasma B-SMT
nitrided I-SMT
Ti-6Al-4V B-MAT


fatigue B-CMT
tests I-CMT
with O
and O
without O
fretting O
against O
unnitrided O
fretting B-APL
pads I-APL
were O
conducted O
on O
unnitrided O
and O
plasma B-SMT
nitrided I-SMT
Ti-6Al-4V B-MAT
samples O
. O


plasma B-SMT
nitrided I-SMT
samples O
exhibited O
higher O
surface B-PRO
hardness I-PRO
, O
higher O
surface B-PRO
compressive I-PRO
residual I-PRO
stress I-PRO
, O
lower O
surface B-PRO
roughness I-PRO
and O
reduced O
friction B-PRO
force I-PRO
compared O
with O
the O
unnitrided O
specimens O
. O


plasma B-SMT
nitriding I-SMT
enhanced O
the O
lives O
of O
Ti-6Al-4V B-MAT
specimens O
under O
both O
plain B-PRO
fatigue I-PRO
and O
fretting B-PRO
fatigue I-PRO
loadings O
. O


this O
was O
explained O
in O
terms O
of O
the O
differences O
in O
surface B-PRO
hardness I-PRO
, O
surface B-PRO
residual I-PRO
stress I-PRO
, O
surface B-PRO
roughness I-PRO
and O
friction B-PRO
force I-PRO
between O
the O
unnitrided O
and O
nitrided B-SMT
samples O
. O


synthesis O
of O
O2Ti B-MAT
decorated O
Co3O4 B-MAT
acicular O
nanowire B-DSC
arrays I-DSC
and O
their O
application O
as O
an O
ethanol B-APL
sensor I-APL


A O
novel O
heterostructure B-DSC
of O
O2Ti B-MAT
modified O
Co3O4 B-MAT
( O
O2Ti B-MAT
/ O
Co3O4 B-MAT
) O
acicular O
nanowire B-DSC
( O
NW B-DSC
) O
arrays O
has O
been O
fabricated O
in O
this O
study O
, O
which O
demonstrates O
a O
good O
performance O
for O
ethanol B-APL
detection I-APL
at O
working O
temperatures O
as O
low O
as O
<nUm> O
° O
C O
. O


Co3O4 B-MAT
NW B-DSC
arrays I-DSC
were O
first O
grown O
on O
an O
Al2O3 B-MAT
substrate B-DSC
patterned O
with O
an O
Ag B-MAT
/ O
Pd B-MAT
electrode B-APL
by O
a O
hydrothermal B-SMT
method I-SMT
, O
and O
then O
O2Ti B-MAT
nanoparticles B-DSC
were O
decorated O
on O
the O
surface B-DSC
of O
Co3O4 B-MAT
NW B-DSC
arrays I-DSC
by O
using O
pulsed B-SMT
laser I-SMT
deposition I-SMT
( O
PLD B-SMT
) O
. O


it O
is O
found O
that O
after O
decoration O
of O
O2Ti B-MAT
, O
the O
O2Ti B-MAT
/ O
Co3O4 B-MAT
NW B-DSC
array I-DSC
sensor B-APL
exhibits O
a O
much O
higher O
response B-PRO
to I-PRO
ethanol I-PRO
( O
Rg B-PRO
/ I-PRO
Ra I-PRO
= O
<nUm> O
, O
Rg B-PRO
is O
the O
sensor B-PRO
resistance I-PRO
measured O
in O
a O
mixture O
of O
target O
gases O
and O
Ra B-PRO
is O
the O
resistance B-PRO
measured O
in O
air O
) O
compared O
with O
the O
pristine O
Co3O4 B-MAT
NW B-DSC
sensor B-APL
( O
Rg B-PRO
/ I-PRO
Ra I-PRO
= O
<nUm> O
) O
. O


importantly O
, O
the O
O2Ti B-MAT
/ O
Co3O4 B-MAT
sensor B-APL
has O
shown O
a O
detection B-PRO
limit I-PRO
as O
low O
as O
<nUm> O
ppm O
, O
and O
a O
good O
reproducibility O
. O


the O
reason O
for O
the O
enhanced O
sensing B-PRO
properties I-PRO
of O
O2Ti B-MAT
/ O
Co3O4 B-MAT
is O
considered O
to O
be O
due O
to O
the O
formation O
of O
a O
p B-APL
– I-APL
n I-APL
junction I-APL
between O
the O
p B-PRO
- I-PRO
type I-PRO
Co3O4 B-MAT
and O
n B-PRO
- I-PRO
type I-PRO
O2Ti B-MAT
. O


tailoring O
the O
surface B-PRO
morphology I-PRO
of O
O2Ti B-MAT
nanotube B-DSC
arrays I-DSC
connected O
with O
nanowires B-DSC
by O
anodization B-SMT


different O
surface B-PRO
morphologies I-PRO
of O
O2Ti B-MAT
nanotube B-DSC
arrays I-DSC
were O
formed O
by O
anodization B-SMT
of O
Ti B-MAT
foils B-DSC
in O
various O
water O
- O
containing O
electrolytes O
at O
various O
voltages O
. O


field B-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
( O
FESEM B-CMT
) O
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
were O
used O
to O
investigate O
the O
morphology B-PRO
of O
O2Ti B-MAT
nanowires B-DSC
. O


the O
results O
show O
that O
the O
morphology B-PRO
of O
O2Ti B-MAT
nanowires B-DSC
is O
apparently O
influenced O
by O
viscosity O
of O
electrolytes O
and O
voltage O
. O


In O
this O
case O
, O
we O
introduce O
a O
detailed O
formation O
mechanism O
of O
nanowires B-DSC
that O
shows O
a O
strong O
relationship O
between O
the O
formation O
of O
O2Ti B-MAT
nanowires B-DSC
and O
TiF62- O
concentration O
. O


it O
was O
also O
found O
that O
O2Ti B-MAT
nanowires B-DSC
are O
polycrystalline B-DSC
with O
anatase B-SPL
phase O
after O
annealing B-SMT
at O
<nUm> O
° O
C O
for O
3h O
. O


ruthenium B-MAT
doped B-DSC
lithium B-MAT
ferrite I-MAT


the O
maximum O
solubility O
of O
ruthenium B-MAT
in O
lithium B-MAT
ferrite I-MAT
, O
xlim B-PRO
, O
in O
the O
temperature O
range O
<nUm> O
to O
<nUm> O
° O
C O
is O
related O
to O
the O
firing B-SMT
temperature O
T( O
° O
C O
) O
by O
the O
empirical O
formula O
xlim B-PRO
= O
<nUm> O
× O
10-3(T-900) O
. O


the O
ruthenium B-MAT
enters O
the O
octahedral O
( O
B O
) O
sites O
of O
the O
spinel B-SPL
structure O
as O
ru3+ O
ions O
in O
a O
low B-PRO
spin I-PRO
state I-PRO
. O


synthesis O
of O
BaCeO3 B-MAT
and O
BaCe0.9Y0.1O3-d B-MAT
from O
mixed O
oxalate B-MAT
precursors O


an O
oxalate B-MAT
precipitation B-SMT
route I-SMT
is O
proposed O
for O
the O
synthesis O
of O
BaCe1-xYxO3 B-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
and I-MAT
<nUm> I-MAT
) I-MAT
after O
calcination B-SMT
at O
<nUm> O
° O
C O
. O


the O
precipitation B-PRO
temperature I-PRO
( O
<nUm> O
° O
C O
) O
was O
a O
determinant O
parameter O
for O
producing O
a O
pure O
perovskite B-SPL
phase O
after O
calcination B-SMT
at O
<nUm> O
° O
C O
for O
1h O
. O


TG B-CMT
/ O
DTA B-CMT
measurements O
showed O
that O
the O
co-precipitated B-DSC
( O
Ba B-MAT
, O
Ce B-MAT
and O
Y B-MAT
) O
oxalate B-MAT
had O
a O
different O
thermal B-PRO
behaviour I-PRO
from O
single O
oxalates B-MAT
. O


despite O
a O
simple O
grinding B-SMT
procedure O
, O
sintered B-SMT
BaCe0.9Y0.1O3-d B-MAT
pellets B-DSC
( O
<nUm> O
° O
C O
, O
48h O
) O
presented O
<nUm> O
% O
of O
relative B-PRO
density I-PRO
and O
preliminary O
impedance B-CMT
measurements I-CMT
showed O
an O
overall O
conductivity B-PRO
of O
around O
<nUm> O
× O
10-4 O
Scm-1 O
at O
<nUm> O
° O
C O
. O


synthesis O
and O
electromagnetic B-PRO
absorption I-PRO
properties I-PRO
of O
Ag B-PRO
- O
coated B-SMT
reduced O
graphene B-MAT
oxide I-MAT
with O
Fe2MnO4 B-MAT
particles B-DSC


A O
ternary O
composite B-DSC
of O
Ag B-MAT
/ O
Fe2MnO4 B-MAT
/ O
reduced O
graphene B-MAT
oxide I-MAT
( O
RGO B-MAT
) O
was O
synthesized O
by O
a O
facile B-SMT
hydrothermal I-SMT
method I-SMT
. O


the O
morphology B-PRO
, O
microstructure B-PRO
, O
magnetic B-PRO
and O
electromagnetic B-PRO
properties I-PRO
of O
as-prepared B-DSC
Ag B-MAT
/ O
Fe2MnO4 B-MAT
/ O
RGO B-MAT
composite O
were O
characterized O
by O
means O
of O
XRD B-CMT
, O
TEM B-CMT
, O
XPS B-CMT
, O
VSM B-CMT
and O
vector B-CMT
network I-CMT
analyzer I-CMT
. O


the O
maximum B-PRO
reflection I-PRO
loss I-PRO
( O
RL B-PRO
) O
of O
Ag B-MAT
/ O
Fe2MnO4 B-MAT
/ O
RGO B-MAT
composite O
shows O
maximum O
absorption B-PRO
of O
-38 O
dB O
at O
6GHz O
with O
the O
thickness O
of O
<nUm> O
mm O
, O
and O
the O
absorption B-PRO
bandwidth I-PRO
with O
the O
RL B-PRO
below O
-10 O
dB O
is O
up O
to O
<nUm> O
GHz O
( O
from O
<nUm> O
to O
<nUm> O
GHz O
) O
. O


the O
result O
demonstrates O
that O
the O
introduction O
of O
Ag B-MAT
significantly O
leads O
to O
the O
multiple O
absorbing O
mechanisms O
. O


it O
is O
believed O
that O
such O
composite B-DSC
could O
serve O
as O
a O
powerful O
candidate O
for O
microwave B-APL
absorber I-APL
. O


amorphous B-DSC
carbon B-MAT
nanocomposite B-DSC
films I-DSC
doped I-DSC
by O
titanium B-MAT
: O
surface B-DSC
and O
sub-surface B-DSC
composition B-PRO
and O
bonding B-PRO


hydrogen O
free O
Ti B-MAT
- O
doped B-DSC
amorphous I-DSC
carbon B-MAT
layers B-DSC
were O
prepared O
by O
dual B-SMT
beam I-SMT
pulsed I-SMT
laser I-SMT
deposition I-SMT
using O
two O
excimer O
lasers O
. O


the O
air B-SMT
- I-SMT
exposed I-SMT
surfaces B-DSC
were O
analyzed O
by O
high B-CMT
- I-CMT
energy I-CMT
resolved I-CMT
and I-CMT
angular I-CMT
- I-CMT
resolved I-CMT
core I-CMT
- I-CMT
level I-CMT
photoelectron I-CMT
spectroscopy I-CMT
, O
and O
were O
then O
step O
- O
by O
- O
step O
sputtered B-SMT
with O
an O
argon B-SMT
gas I-SMT
cluster I-SMT
ion I-SMT
beam I-SMT
( O
ArGCIB B-SMT
) O
, O
which O
is O
known O
to O
be O
a O
very O
gentle O
technique O
with O
respect O
to O
changes O
in O
surface B-PRO
chemistry I-PRO
. O


the O
results O
show O
that O
the O
top O
surface B-DSC
of O
the O
sample O
and O
its O
sub-surface O
region O
differ O
in O
composition B-PRO
and O
in O
bonding B-PRO
. O


the O
top O
surface B-DSC
is O
enriched O
by O
oxygen O
- O
bearing O
species O
. O


carbon B-MAT
- O
bearing O
species O
located O
on O
the O
surface B-DSC
are O
mostly O
in O
sp3 O
hybridization O
. O


titanium B-MAT
carbide I-MAT
clusters B-DSC
, O
CTi B-MAT
, O
are O
not O
directly O
exposed O
at O
the O
surface B-DSC
. O


they O
are O
embedded O
in O
a O
carbon B-MAT
network O
with O
dominating O
C B-MAT
sp2 O
hybridization O
. O


their O
interface B-DSC
is O
formed O
by O
a O
distinct O
carbon B-MAT
- O
rich O
titanium B-MAT
carbide I-MAT
with O
stoichiometry B-PRO
close O
to O
C3Ti B-MAT
. O


the O
surface B-DSC
damage O
induced O
by O
ArGCIB B-SMT
was O
found O
to O
be O
minimal O
, O
verifiably O
affecting O
carbon B-MAT
atoms O
in O
the O
carbon B-MAT
network O
. O


processing O
, O
microstructure B-PRO
, O
and O
mechanical B-PRO
properties I-PRO
of O
zirconium B-MAT
diboride I-MAT
- O
boron B-MAT
carbide I-MAT
ceramics B-DSC


the O
processing O
, O
microstructure B-PRO
, O
and O
mechanical B-PRO
properties I-PRO
of O
zirconium B-MAT
diboride I-MAT
- O
boron B-MAT
carbide I-MAT
( O
ZrB2-B4C B-MAT
) O
ceramics B-DSC
were O
characterized O
. O


ceramics B-DSC
containing O
nominally O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
and O
40vol O
% O
B4C B-MAT
were O
hot B-SMT
- I-SMT
pressed I-SMT
to O
full O
density B-PRO
at O
<nUm> O
° O
C O
. O


the O
B2Zr B-MAT
grain B-PRO
size I-PRO
decreased O
from O
<nUm> O
to O
<nUm> O
um O
and O
B4C B-MAT
inclusion B-PRO
size I-PRO
increased O
from O
<nUm> O
to O
<nUm> O
um O
for O
B4C B-MAT
additions O
of O
<nUm> O
and O
40vol O
% O
B4C B-MAT
, O
respectively O
. O


elastic B-PRO
modulus I-PRO
decreased O
from O
<nUm> O
to O
<nUm> O
GPa O
and O
vickers B-PRO
hardness I-PRO
increased O
from O
<nUm> O
to O
<nUm> O
GPa O
as O
the O
B4C B-MAT
content O
increased O
from O
<nUm> O
to O
40vol O
% O
, O
respectively O
, O
following O
trends O
predicted O
using O
linear B-CMT
rules I-CMT
of I-CMT
mixtures I-CMT
. O


flexure B-PRO
strength I-PRO
and O
fracture B-PRO
toughness I-PRO
both O
increased O
with O
increasing O
B4C B-MAT
content O
. O


fracture B-PRO
toughness I-PRO
increased O
from O
<nUm> O
MPam 1/2  O
at O
5vol O
% O
B4C O
to O
<nUm> O
MPam 1/2  O
at O
40vol O
% O
B4C B-MAT
additions O
. O


flexure B-PRO
strength I-PRO
was O
<nUm> O
MPa O
with O
a O
5vol O
% O
B4C B-MAT
addition O
, O
increasing O
to O
<nUm> O
MPa O
for O
a O
40vol O
% O
addition O
. O


the O
critical B-PRO
flaw I-PRO
size I-PRO
was O
calculated O
to O
be O
~ O
<nUm> O
um O
for O
all O
compositions B-PRO
, O
and O
analysis O
of O
the O
fracture B-PRO
surfaces I-PRO
indicated O
that O
strength B-PRO
was O
controlled O
by O
edge B-PRO
flaws I-PRO
generated O
by O
machining B-SMT
induced O
sub-surface B-PRO
damage I-PRO
. O


increasing O
amounts O
of O
B4C B-MAT
added O
to O
B2Zr B-MAT
led O
to O
increasing O
hardness B-PRO
due O
to O
the O
higher O
hardness B-PRO
of O
B4C B-MAT
compared O
to O
B2Zr B-MAT
and O
increased O
crack B-PRO
deflection I-PRO
. O


additions O
of O
B4C B-MAT
also O
lead O
to O
increases O
in O
fracture B-PRO
toughness I-PRO
due O
to O
increased O
crack B-PRO
deflection I-PRO
and O
intergranular B-PRO
fracture I-PRO
. O


x-ray B-CMT
and O
mossbauer B-CMT
studies I-CMT
of O
Sm2Fe17-x B-MAT
Cr I-MAT
x I-MAT
materials O
synthesized O
by O
mechanical B-SMT
alloying I-SMT
followed O
by O
an O
appropriate O
short O
annealing B-SMT


samples O
of O
Sm2Fe17-xCrx B-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
– I-MAT
<nUm> I-MAT
) I-MAT
ball B-SMT
- I-SMT
milled I-SMT
and O
subsequently O
annealed B-SMT
at O
<nUm> O
K O
, O
were O
studied O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
using O
the O
rietveld B-CMT
method I-CMT
coupled O
to O
curie B-PRO
temperature I-PRO
Tc I-PRO
measurements O
and O
mossbauer B-CMT
spectroscopy I-CMT
. O


XRD B-CMT
investigation O
have O
shown O
that O
for O
x O
≤ O
<nUm> O
, O
Sm2Fe17-xCrx B-MAT
alloys B-DSC
crystallize O
in O
the O
Th2Zn17 B-MAT
type O
rhombohedral B-SPL
structure O
and O
in O
the O
Nd3(Fe B-SPL
, I-SPL
ti)29 I-SPL
type O
monoclinic B-SPL
structure O
for O
x O
> O
<nUm> O
. O


the O
mossbauer B-CMT
studies O
indicate O
that O
the O
Cr B-MAT
atoms O
occupy O
6c O
sites O
in O
the O
rhombohedral B-SPL
structure O
in O
all O
cases O
. O


for O
x O
= O
<nUm> O
, O
the O
six O
( O
6c O
) O
Fe B-MAT
atoms O
are O
substituted O
by O
Cr B-MAT
atoms O
and O
the O
fe(6c) B-MAT
sites O
disappear O
. O


the O
curie B-PRO
temperature I-PRO
increases O
up O
to O
<nUm> O
K O
for O
x O
= O
<nUm> O
and O
decreases O
to O
a O
value O
of O
<nUm> O
K O
for O
x O
= O
<nUm> O
. O


the O
increase O
of O
Tc B-PRO
was O
explained O
by O
the O
increase O
of O
the O
distance O
between O
the O
‘ O
dumbbell O
’ O
fe(6c) B-MAT
sites O
from O
<nUm> O
to O
<nUm> O
Å O
. O


the O
decrease O
of O
Tc B-PRO
is O
assigned O
to O
the O
magnetic B-PRO
dilution I-PRO
of O
the O
Fe17Sm2 B-MAT
lattice O
by O
substitution O
of O
strong O
magnetically B-PRO
Fe B-MAT
atoms O
by O
weak O
magnetically B-PRO
Cr B-MAT
atoms O
and O
the O
smaller O
Cr B-MAT
– O
Fe B-MAT
and O
Cr B-MAT
– O
Cr B-MAT
exchange B-PRO
coupling I-PRO
. O


anomalous O
magnetoresistance B-PRO
in O
the O
normal B-PRO
state I-PRO
of O
y1-x B-MAT
Pr I-MAT
x I-MAT
Ba2Cu3O I-MAT
y I-MAT
( I-MAT
x I-MAT
≥ I-MAT
<nUm> I-MAT
) I-MAT
films B-DSC


the O
magnetoresistance B-PRO
was O
measured O
for O
both O
h[?]c O
- O
axis O
and O
H[?] O
; O
c-axis O
, O
using O
c-axis B-PRO
oriented I-PRO
films B-DSC
with O
x O
≥ O
<nUm> O
of O
the O
Y1-xPrxBa2Cu3Oy B-MAT
system O
. O


the O
sheet B-PRO
resistance I-PRO
for O
the O
CuO2 B-MAT
layer B-DSC
of O
the O
sample O
with O
x O
= O
<nUm> O
is O
in O
agreement O
with O
h B-PRO
4e2 I-PRO
= O
<nUm> O
Ω O
□ O
which O
is O
the O
threshold O
value O
of O
a O
superconducting B-PRO
- I-PRO
insulator I-PRO
( I-PRO
SI I-PRO
) I-PRO
transition I-PRO
in O
the O
two B-DSC
- I-DSC
dimensional I-DSC
system O
. O


furthermore O
, O
in O
the O
samples O
with O
x O
= O
<nUm> O
and O
<nUm> O
a O
negative O
magnetoresistance B-PRO
was O
observed O
in O
a O
wide O
temperature O
range O
below O
<nUm> O
K O
. O


its O
magnitude O
is O
much O
larger O
for O
h[?]c O
- O
axis O
than O
for O
H O
⊥ O
; O
c-axis O
. O


the O
origin O
of O
the O
negative O
magnetoresistance B-PRO
is O
interpreted O
as O
a O
localization B-PRO
effect I-PRO
because O
those O
samples O
have O
the O
Pr B-PRO
concentration I-PRO
around O
the O
SI B-PRO
transition I-PRO
in O
the O
present O
system O
. O


it O
is O
pointed O
out O
that O
the O
disappearance O
of O
the O
superconductivity B-PRO
at O
xcr B-PRO
∼ O
<nUm> O
originates O
from O
the O
localization O
effect O
by O
Pr B-MAT
doping B-SMT
. O


deposition O
of O
high O
quality O
amorphous B-DSC
silicon B-MAT
, O
germanium B-MAT
and O
silicon B-MAT
- I-MAT
germanium I-MAT
thin B-DSC
films I-DSC
by O
a O
hollow B-SMT
cathode I-SMT
reactive I-SMT
sputtering I-SMT
system O


high O
quality O
hydrogenated B-DSC
amorphous I-DSC
silicon B-MAT
( O
a-Si B-MAT
: I-MAT
H I-MAT
) O
, O
germanium B-MAT
( O
a-Ge B-MAT
: I-MAT
H I-MAT
) O
and O
silicon B-MAT
– I-MAT
germanium I-MAT
( O
a-SiGe B-MAT
: I-MAT
H I-MAT
) O
thin B-DSC
films I-DSC
have O
been O
deposited O
by O
means O
of O
a O
d.c. B-SMT
hollow I-SMT
cathode I-SMT
system I-SMT
with O
magnetic O
field O
confinement O
. O


high O
purity O
single B-DSC
- I-DSC
crystal I-DSC
silicon B-MAT
and O
germanium B-MAT
nozzles B-DSC
were O
reactively B-SMT
sputtered I-SMT
in O
a O
high B-SMT
- I-SMT
density I-SMT
hollow I-SMT
cathode I-SMT
discharge I-SMT
of O
argon O
and O
hydrogen O
. O


this O
process O
avoids O
the O
use O
of O
the O
toxic O
and O
pyrophoric O
gases O
, O
germane O
and O
silane O
. O


the O
amorphous B-DSC
silicon B-MAT
thin B-DSC
films I-DSC
had O
light B-PRO
to I-PRO
dark I-PRO
conductivity I-PRO
ratios I-PRO
> O
<nUm> O
with O
light B-PRO
conductivity I-PRO
in O
the O
<nUm> O
− O
<nUm> O
S O
/ O
cm O
range O
. O


the O
best O
a-Si B-MAT
: I-MAT
H I-MAT
films B-DSC
have O
a O
tauc B-CMT
band B-PRO
gap I-PRO
near O
<nUm> O
eV O
with O
an O
atomic B-PRO
hydrogen I-PRO
concentration I-PRO
of O
approximately O
<nUm> O
% O
. O


the O
growth O
rate O
was O
in O
the O
<nUm> O
– O
<nUm> O
mm O
/ O
h O
range O
. O


for O
the O
a-Ge B-MAT
: I-MAT
H I-MAT
films B-DSC
the O
FTIR B-CMT
results O
indicate O
that O
these O
films B-DSC
have O
hydrogen O
bonding O
as O
a O
single O
atom O
, O
as O
did O
the O
hydrogenated B-DSC
silicon B-MAT
films B-DSC
. O


the O
tauc B-CMT
bandgap B-PRO
was O
approximately O
<nUm> O
eV O
for O
all O
the O
germanium B-MAT
films B-DSC
. O


A O
slight O
photoresponse B-PRO
was O
noted O
for O
these O
films B-DSC
, O
which O
were O
deposited O
at O
a O
rate O
of O
from O
<nUm> O
to O
<nUm> O
mm O
/ O
h O
. O


for O
the O
a-SiGe B-MAT
: I-MAT
H I-MAT
films B-DSC
, O
two O
hollow B-APL
cathodes I-APL
of O
single B-DSC
crystal I-DSC
Si B-MAT
and O
Ge B-MAT
are O
reactively B-SMT
sputtered I-SMT
simultaneously O
. O


A O
description O
of O
the O
complete O
system O
will O
be O
presented O
. O


the O
optical B-PRO
and O
electronic B-PRO
properties I-PRO
of O
the O
initial O
films B-DSC
are O
promising O
. O


the O
photoresponse B-PRO
is O
dependent O
upon O
the O
bandgap B-PRO
, O
i.e. O
the O
germanium B-MAT
content O
, O
as O
expected O
. O


A O
light B-PRO
to I-PRO
dark I-PRO
ratio I-PRO
of O
<nUm> O
has O
been O
achieved O
for O
a O
film B-DSC
with O
a O
bandgap B-PRO
of O
<nUm> O
eV O
. O


the O
FTIR B-CMT
data O
indicates O
that O
HSi B-MAT
bonds O
dominate O
over O
Ge B-MAT
: I-MAT
H I-MAT
bonds O
by O
the O
absence O
of O
peaks O
at O
<nUm> O
and O
<nUm> O
cm-1 O
. O


synergistic O
effect O
of O
hybrid O
carbon B-MAT
nanotube B-DSC
and O
graphene B-MAT
nanoplatelets B-DSC
reinforcement O
on O
processing O
, O
microstructure B-PRO
, O
interfacial B-PRO
stress I-PRO
and O
mechanical B-PRO
properties I-PRO
of O
Al2O3 B-MAT
nanocomposites B-DSC


Al2O3 B-MAT
, O
Al2O3-1wt B-MAT
% I-MAT
carbon I-MAT
nanotube I-MAT
( O
CNT B-MAT
) O
and O
Al2O3-1wt B-MAT
% I-MAT
CNT-0.5wt I-MAT
% I-MAT
graphene I-MAT
nanoplatelets B-DSC
( O
GNP B-MAT
) O
were O
consolidated O
by O
spark B-SMT
plasma I-SMT
sintering I-SMT
at O
a O
temperature O
of O
<nUm> O
° O
C O
. O


spray B-SMT
drying I-SMT
technique O
was O
used O
for O
uniformly O
distributing O
the O
CNTs B-MAT
and O
GNPs B-MAT
. O


fracture B-PRO
toughness I-PRO
of O
Al2O3 B-MAT
pellet B-DSC
drastically O
increased O
to O
<nUm> O
% O
on O
addition O
of O
CNTs B-MAT
, O
while O
substantial O
improvement O
of O
<nUm> O
% O
was O
seen O
on O
the O
addition O
of O
both O
CNTs B-MAT
and O
GNPs B-MAT
. O


interfacial B-PRO
shear I-PRO
stress I-PRO
for O
Al2O3-CNT-GNP B-MAT
was O
found O
to O
be O
<nUm> O
– O
<nUm> O
MPa O
. O


novel O
toughening O
mechanisms O
such O
as O
CNT B-MAT
yarning O
and O
CNT B-MAT
embedded O
graphene B-MAT
was O
found O
responsible O
for O
the O
drastic O
improvement O
in O
toughness B-PRO
. O


epitaxial O
growth O
of O
aluminum B-MAT
- O
doped B-DSC
zinc B-MAT
oxide I-MAT
films B-DSC
on O
( O
<nUm> O
– O
<nUm> O
) O
oriented O
sapphire B-MAT
substrates B-DSC


OZn B-MAT
: I-MAT
AI I-MAT
films B-DSC
were O
deposited O
on O
( O
<nUm> O
– O
<nUm> O
) O
oriented O
sapphire B-MAT
substrates B-DSC
heated B-SMT
up O
to O
<nUm> O
° O
C O
with O
an O
RF O
power O
ranging O
from O
<nUm> O
to O
<nUm> O
W O
by O
RF B-SMT
magnetron I-SMT
sputtering I-SMT
from O
a O
OZn B-MAT
target O
mixed O
with O
AI2O3 B-MAT
of O
<nUm> O
wt O
% O
. O


films B-DSC
deposited O
on O
substrates B-DSC
heated B-SMT
to O
a O
temperature O
in O
the O
range O
50-350 O
° O
C O
were O
( O
<nUm> O
) O
oriented O
single B-DSC
crystals I-DSC
but O
those O
grown O
at O
<nUm> O
° O
C O
consisted O
of O
crystallites B-DSC
with O
the O
( O
<nUm> O
) O
and O
( O
<nUm> O
) O
orientation O
. O


the O
epitaxial O
relationships O
between O
OZn B-MAT
: I-MAT
AI I-MAT
films B-DSC
and O
the O
substrates B-DSC
were O
determined O
by O
using O
the O
reflective B-CMT
electron I-CMT
diffraction I-CMT
patterns I-CMT
from O
the O
films B-DSC
and O
the O
back B-CMT
- I-CMT
reflection I-CMT
laue I-CMT
patterns I-CMT
from O
the O
substrates B-DSC
. O


from O
these O
measurements O
, O
it O
was O
found O
that O
there O
were O
two O
types O
of O
epitaxial O
relationships O
between O
the O
( O
<nUm> O
) O
OZn B-MAT
: I-MAT
AI I-MAT
films B-DSC
and O
the O
( O
<nUm> O
) O
sapphire B-MAT
substrates B-DSC
. O


one O
was O
[1010]ZnO B-MAT
: I-MAT
AI I-MAT
ll[00111]sapphire I-MAT
and O
the O
other O
[2110]ZnO B-MAT
: I-MAT
AI I-MAT
||[0001]sapphire I-MAT
. O


Sn B-MAT
whisker B-DSC
growth O
during O
thermal B-SMT
cycling I-SMT


pure B-DSC
Sn B-MAT
plating B-APL
on O
ceramic B-DSC
chip B-APL
capacitors I-APL
was O
tested O
by O
thermal B-SMT
cycling I-SMT
both O
in O
air O
and O
in O
vacuum O
for O
up O
to O
<nUm> O
cycles O
and O
the O
whisker B-DSC
growth B-PRO
mechanism I-PRO
was O
clarified O
. O


A O
thin B-DSC
crystalline I-DSC
OSn B-MAT
layer B-DSC
is O
formed O
on O
the O
surface B-DSC
of O
Sn B-MAT
plating B-APL
and O
whiskers B-DSC
, O
which O
exhibits O
a O
high O
level O
of O
cracking O
. O


thermal B-SMT
cycling I-SMT
whiskers B-DSC
exhibit O
two O
distinct O
features O
: O
fine O
striation O
rings O
on O
the O
whisker B-DSC
side O
face O
vertical O
to O
the O
whisker B-DSC
growth O
axis O
; O
and O
deep O
grooves O
at O
the O
root O
of O
the O
whiskers B-DSC
. O


one O
ring O
of O
the O
fine O
striations O
corresponds O
to O
each O
thermal B-SMT
cycle I-SMT
. O


the O
formation O
of O
the O
grooves O
can O
be O
attributed O
to O
thermal B-SMT
cycle I-SMT
cracking O
along O
grain B-PRO
boundaries I-PRO
of O
Sn B-MAT
followed O
by O
oxidation B-SMT
and O
growth O
of O
whiskers B-DSC
from O
the O
root O
grains O
. O


the O
characteristic O
winding O
feature O
observed O
for O
thermal B-SMT
cycling I-SMT
whiskers B-DSC
can O
be O
attributed O
to O
the O
formation O
of O
root O
grooves O
with O
severe O
oxidation B-SMT
. O


whisker B-DSC
growth O
in O
vacuum O
is O
faster O
than O
in O
air O
. O


whiskers B-DSC
grown O
in O
vacuum O
are O
thinner O
and O
longer O
than O
whiskers B-DSC
grown O
in O
air O
, O
while O
the O
whisker B-DSC
density B-PRO
is O
not O
influenced O
by O
atmosphere O
. O


the O
interval O
of O
striation O
rings O
is O
wider O
for O
vacuum B-SMT
- I-SMT
grown I-SMT
whiskers B-DSC
as O
compared O
with O
air B-SMT
- I-SMT
grown I-SMT
whiskers B-DSC
. O


magnetostriction B-PRO
and O
magnetization B-PRO
process O
of O
Dy73Fe200Tb27 B-MAT
single B-DSC
crystal I-DSC


the O
magnetostriction B-PRO
, O
dynamic B-PRO
strain I-PRO
coefficient I-PRO
and O
magnetization B-PRO
process O
of O
a O
<111>  O
oriented O
twin B-PRO
- I-PRO
free I-PRO
Dy73Fe200Tb27 B-MAT
single B-DSC
crystal I-DSC
along O
the O
<111>  O
, O
<112>  O
and O
<110>  O
directions O
were O
investigated O
by O
strain B-CMT
gauge I-CMT
, O
lock-in B-CMT
amplifier I-CMT
, O
double B-CMT
coiled I-CMT
induction I-CMT
and O
bitter B-CMT
colloid I-CMT
techniques I-CMT
. O


it O
is O
found O
that O
a O
‘ O
jump O
’ O
effect O
of O
magnetostriction B-PRO
along O
[ O
<nUm> O
<nUm> O
̄ O
] O
and O
[ O
<nUm> O
<nUm> O
1 O
] O
directions O
occurs O
at O
a O
particular O
field O
and O
no O
‘ O
jump O
’ O
effect O
occurs O
in O
the O
direction O
of O
[011] O
. O


the O
value O
of O
the O
magnetostriction B-PRO
along O
[ O
<nUm> O
<nUm> O
̄ O
] O
direction O
is O
higher O
than O
that O
along O
[ O
<nUm> O
<nUm> O
1 O
] O
direction O
and O
the O
‘ B-PRO
jump I-PRO
’ I-PRO
field I-PRO
for O
[ O
<nUm> O
<nUm> O
̄ O
] O
direction O
is O
much O
lower O
than O
that O
for O
[ O
<nUm> O
<nUm> O
1 O
] O
direction O
. O


the O
magnetization B-PRO
process O
and O
dynamic B-PRO
strain I-PRO
coefficient I-PRO
, O
d33 B-PRO
, O
of O
the O
Dy73Fe200Tb27 B-MAT
single B-DSC
crystal I-DSC
along O
the O
<111>  O
, O
<112>  O
and O
<110>  O
directions O
were O
also O
discussed O
. O


the O
<111>  O
oriented O
twin B-PRO
- I-PRO
free I-PRO
Dy73Fe200Tb27 B-MAT
single B-DSC
crystal I-DSC
possesses O
excellent O
magnetostrictive B-PRO
properties I-PRO
along O
the O
rod O
direction O
( O
<111>  O
) O
in O
low O
magnetic O
fields O
and O
it O
is O
very O
useful O
in O
applications O
of O
industry O
. O


another O
approach O
to O
mechanism O
of O
ferromagnetic B-PRO
superconductor I-PRO
Ge2U B-MAT


we O
study O
the O
ferromagnetic B-PRO
superconductor I-PRO
of O
Ge2U B-MAT
applying O
our O
previous O
model O
[ O
phys. O
rev. O
B O
<nUm> O
( O
<nUm> O
) O
, O
<nUm> O
] O
for O
the O
high O
transition B-PRO
temperature I-PRO
superconductivity I-PRO
( O
HTSC B-PRO
) O
. O


the O
coulomb B-PRO
interaction I-PRO
for O
triplet B-PRO
electron I-PRO
pairs I-PRO
is O
reduced O
by O
a O
difference O
of O
the O
exchange B-PRO
interaction I-PRO
. O


In O
the O
case O
of O
Ge2U B-MAT
including O
other O
heavy B-PRO
fermion I-PRO
superconductors I-PRO
, O
coexistence O
of O
triplet O
superconductivity B-PRO
and O
ferromagnetism B-PRO
is O
possible O
in O
the O
case O
of O
our O
scheme O
. O


we O
also O
investigate O
the O
pressure O
- O
dependence O
of O
curie B-PRO
temperature I-PRO
, O
Tc B-PRO
and O
superconducting B-PRO
temperature I-PRO
, O
tsc B-PRO
. O


fabrication O
and O
characterization O
of O
OZn B-MAT
nanofibers B-DSC
by O
electrospinning B-SMT


OZn B-MAT
nanofibers B-DSC
were O
fabricated O
by O
an O
electrospinning B-SMT
method I-SMT
using O
a O
solution O
containing O
sol B-SMT
– I-SMT
gel I-SMT
precursors O
, O
polymer O
and O
solvent O
. O


the O
as-spun B-DSC
and O
annealed B-SMT
OZn B-MAT
/ O
poly(4 O
- O
vinyl O
phenol O
) O
composite B-DSC
fibers I-DSC
were O
characterized O
both O
structurally B-PRO
and O
electrically B-PRO
. O


the O
composite B-DSC
fibers I-DSC
were O
completely O
decomposed O
to O
obtain O
polycrystalline B-DSC
OZn B-MAT
nanofibers B-DSC
. O


the O
crystallinity B-PRO
of O
OZn B-MAT
nanofibers B-DSC
improved O
with O
increase O
in O
annealing B-SMT
temperature O
. O


the O
diameters O
of O
OZn B-MAT
nanofibers B-DSC
after O
annealing B-SMT
above O
<nUm> O
° O
C O
ranged O
from O
<nUm> O
nm O
to O
<nUm> O
nm O
. O


the O
activation B-PRO
energy I-PRO
of O
OZn B-MAT
nanofibers B-DSC
for O
electrical B-PRO
conduction I-PRO
was O
inversely O
proportional O
to O
the O
annealing B-SMT
temperature O
. O


the O
OZn B-MAT
nanofibers B-DSC
showed O
CO B-APL
gas I-APL
sensing I-APL
capacity O
at O
concentration O
as O
low O
as O
<nUm> O
ppm O
. O


phase B-PRO
diagram I-PRO
of O
FexV1-xO2 B-MAT
in O
the O
<nUm> O
≤ O
x O
≤ O
<nUm> O
region O


the O
phase B-PRO
diagram I-PRO
of O
the O
FexV1-xO2 B-MAT
system O
( O
<nUm> O
≤ O
x O
≤ O
<nUm> O
) O
has O
been O
studied O
in O
detail O
by O
means O
of O
x-ray B-CMT
diffraction I-CMT
and O
differential B-CMT
scanning I-CMT
calorimetry I-CMT
( O
DSC B-DSC
) O
. O


As O
the O
result O
, O
there O
appear O
succesively O
six O
phases O
, O
M1-T-M2-M4-O-X O
( O
the O
same O
notation O
as O
the O
CrxV1-xO2 B-MAT
system O
. O


O O
; O
orthorhombic B-SPL
, O
x O
; O
unknown O
) O
with O
increasing O
x O
. O


change O
of O
the O
phase B-PRO
transformation I-PRO
temperature I-PRO
tt I-PRO
and O
the O
heat B-PRO
of I-PRO
transformation I-PRO
DH I-PRO
with O
the O
impurity B-PRO
concentration I-PRO
x O
have O
been O
determined O
. O


mechanical B-PRO
property I-PRO
measurement O
of O
InP B-MAT
- O
based O
MEMS B-APL
for O
optical B-APL
communications I-APL


we O
investigate O
mechanical B-PRO
properties I-PRO
of O
indium B-MAT
phosphide I-MAT
( O
InP B-MAT
) O
for O
optical B-APL
micro-electro-mechanical I-APL
systems I-APL
( O
MEMS B-APL
) O
applications O
. O


A O
material O
system O
and O
fabrication O
process O
for O
InP B-MAT
- O
based O
beam B-APL
- I-APL
type I-APL
electrostatic I-APL
actuators I-APL
is O
presented O
. O


strain B-PRO
gradient I-PRO
, O
intrinsic B-PRO
stress I-PRO
, O
young B-PRO
's I-PRO
modulus I-PRO
, O
and O
hardness B-PRO
are O
evaluated O
by O
beam B-CMT
profile I-CMT
measurements I-CMT
, O
nanoindentation B-CMT
, O
beam B-CMT
bending I-CMT
, O
and O
electrostatic B-CMT
testing I-CMT
methods O
. O


we O
measured O
an O
average O
strain B-PRO
gradient I-PRO
of O
de0 B-PRO
/ I-PRO
dt I-PRO
= O
<nUm> O
× O
<nUm> O
− O
<nUm> O
mm-1 O
, O
with O
an O
average O
intrinsic B-PRO
stress I-PRO
of O
s0 B-PRO
= O
-5.4 O
MPa O
for O
[011] O
beams O
. O


the O
intrinsic B-PRO
stress I-PRO
results O
from O
arsenic O
contamination O
during O
molecular B-CMT
beam I-CMT
epitaxy I-CMT
and O
( O
MBE B-SMT
) O
can O
be O
minimized O
by O
careful O
MBE B-CMT
growth O
and O
through O
the O
use O
of O
stress O
compensating O
layers B-DSC
. O


nanoindentation B-CMT
of O
( O
<nUm> O
) O
InP B-MAT
resulted O
in O
e B-PRO
= O
<nUm> O
GPa O
and O
H B-PRO
= O
<nUm> O
GPa O
, O
while O
beam B-CMT
bending I-CMT
of O
[011] O
doubly O
clamped O
beams O
resulted O
in O
e B-PRO
= O
<nUm> O
GPa O
and O
s0 B-PRO
= O
-5.6 O
MPa O
. O


we O
discuss O
the O
discrepancy O
in O
young B-PRO
's I-PRO
modulus I-PRO
between O
the O
two O
measurements O
. O


In O
addition O
, O
we O
present O
a O
method O
for O
simultaneously O
measuring O
young B-PRO
's I-PRO
modulus I-PRO
and O
residual B-PRO
stress I-PRO
using O
beam B-CMT
bending I-CMT
. O


electrostatic B-PRO
actuation I-PRO
in O
excess O
of O
<nUm> O
V O
is O
demonstrated O
without O
breakdown O
. O


preparation O
and O
multiferroic B-PRO
properties I-PRO
of O
2-2 O
type O
CoFe2O4 B-MAT
/ O
Pb(Zr,Ti)O3 B-MAT
composite B-DSC
films I-DSC
with O
different O
structures B-PRO


2-2 O
type O
layered B-DSC
CFO B-MAT
/ O
PZT B-MAT
( O
CoFe2O4 B-MAT
/ O
O75Pb25Ti12Zr13 B-MAT
) O
magnetoelectric B-PRO
composite B-DSC
films I-DSC
with O
four O
different O
structures B-PRO
were O
prepared O
on O
Pt B-MAT
/ O
Ti B-MAT
/ O
O2Si B-MAT
/ O
Si B-MAT
substrates B-DSC
via O
a O
sol B-SMT
– I-SMT
gel I-SMT
method O
. O


these O
films O
annealed B-SMT
at O
<nUm> O
° O
C O
contain O
PZT B-MAT
and O
CFO B-MAT
phase O
without O
impurity O
phases O
. O


the O
prepared O
composite B-DSC
films I-DSC
exhibit O
2-2 O
type O
layered B-DSC
structures B-PRO
with O
obvious O
interfaces B-DSC
and O
no O
diffusions O
exist O
between O
CFO B-MAT
and O
PZT B-MAT
films B-DSC
. O


ferromagnetic B-PRO
and O
ferroelectric B-PRO
responses I-PRO
were O
simultaneously O
observed O
in O
the O
composite B-DSC
films I-DSC
. O


these O
composite B-DSC
films I-DSC
exhibit O
good O
magnetoelectric B-PRO
coupling I-PRO
effects O
and O
the O
magnetoelectric B-PRO
voltage I-PRO
coefficients I-PRO
( O
aE B-PRO
) O
increase O
with O
increasing O
the O
volume O
contents O
of O
CFO B-MAT
films B-DSC
in O
composite B-DSC
films I-DSC
. O


the O
aE B-PRO
value O
of O
composite B-DSC
film I-DSC
( O
2PZT B-MAT
/ O
4CFO B-MAT
/ O
2PZT B-MAT
/ O
4CFO B-MAT
/ O
2PZT B-MAT
) O
reaches O
a O
maximum O
( O
<nUm> O
mVcm-1Oe-1 O
) O
among O
all O
the O
prepared O
composite B-DSC
films I-DSC
. O


structural B-PRO
and O
optical B-CMT
characterizations I-CMT
of O
nitrogen O
- O
doped B-DSC
OZn B-MAT
nanowires B-DSC
grown O
by O
MOCVD B-SMT


one O
dimensional O
nitrogen O
- O
doped B-DSC
OZn B-PRO
nanowires B-DSC
were O
deposited O
on O
c-plane B-DSC
sapphire B-MAT
using O
metal B-SMT
organic I-SMT
chemical I-SMT
vapour I-SMT
deposition I-SMT
. O


nanowires B-DSC
have O
been O
characterized O
by O
scanning B-CMT
electron I-CMT
microscopy I-CMT
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
, O
micro-Raman B-CMT
scattering I-CMT
and O
micro-photoluminescence B-CMT
spectroscopy I-CMT
. O


the O
structural B-CMT
analysis I-CMT
has O
shown O
a O
high O
crystalline B-PRO
quality I-PRO
. O


In O
N O
- O
doped B-DSC
OZn B-MAT
nanowires B-DSC
nitrogen O
incorporation O
was O
emphasized O
by O
raman B-CMT
spectral I-CMT
analysis I-CMT
and O
reduction O
of O
nitrogen B-PRO
concentration I-PRO
along O
the O
wire B-DSC
, O
from O
the O
bottom O
to O
the O
top O
was O
found O
by O
local B-CMT
analysis I-CMT
. O


low O
temperature O
micro-photoluminescence B-CMT
spectra O
exhibit O
donor B-PRO
- I-PRO
acceptor I-PRO
pair I-PRO
transitions I-PRO
. O


topotactic B-SMT
dehydration I-SMT
of O
the O
lamellar B-DSC
oxide B-MAT
HK2NbO14Ti5 I-MAT
· I-MAT
H2O I-MAT
: O
the O
oxide B-MAT
K4Nb2O27Ti10 I-MAT


the O
lamellar B-DSC
oxide B-MAT
HK2NbO14Ti5 I-MAT
· I-MAT
H2O I-MAT
can O
be O
topotactically B-SMT
dehydrated I-SMT
to O
K4Nb2O27Ti10 B-MAT
. O


electron B-CMT
diffraction I-CMT
and O
x-ray B-CMT
diffraction I-CMT
studies O
of O
this O
phase O
lead O
to O
a O
monoclinic B-SPL
cell O
with O
the O
parametersa B-PRO
= O
<nUm> O
, O
b B-PRO
= O
<nUm> O
, O
c B-PRO
= O
<nUm> O
a@and O
β B-PRO
= O
<nUm> O
° O
. O


diffusion O
streaks O
on O
the O
electron B-CMT
diffraction I-CMT
patterns O
indicate O
disorder B-PRO
whereas O
the O
existence O
of O
two O
sets O
of O
lattices O
on O
the O
same O
crystal B-DSC
give O
evidence O
of O
the O
topotactic B-PRO
character I-PRO
of O
the O
reaction O
. O


A O
structural B-CMT
model I-CMT
is O
proposed O
for O
K4Nb2O27Ti10 B-MAT
, O
which O
corresponds O
to O
the O
intergrowth O
of O
K3NbO14Ti5 B-MAT
layers B-DSC
with O
the O
K2O13Ti6 B-MAT
tunnel B-DSC
structure I-DSC
. O


the O
possibility O
of O
formation O
of O
various O
intergrowths O
such O
as O
(KTi5NbO13)n B-MAT
(HK2Ti5NbO14)'n I-MAT
is O
suggested O
. O


tensile B-PRO
properties I-PRO
of O
as-cast B-DSC
aluminum B-MAT
alloy B-DSC
AA5182 B-MAT
close O
to O
the O
solidus B-PRO
temperature I-PRO


In O
response O
to O
the O
demand O
for O
accurate O
mechanical B-PRO
property I-PRO
data O
in O
the O
partially O
solidified O
state O
, O
an O
experimental O
apparatus O
has O
been O
developed O
to O
perform O
tensile B-CMT
measurements I-CMT
of O
aluminum B-MAT
alloys B-DSC
at O
temperatures O
close O
to O
the O
solidus B-PRO
temperature I-PRO
. O


measurements O
of O
the O
tensile B-PRO
properties I-PRO
of O
an O
industrially O
direct O
chill B-SMT
cast I-SMT
AA5182 B-MAT
aluminum I-MAT
alloy B-DSC
have O
been O
carried O
out O
at O
temperatures O
between O
<nUm> O
and O
<nUm> O
° O
C O
, O
at O
a O
range O
of O
strain O
rates O
between O
∼ O
<nUm> O
− O
<nUm> O
and O
∼ O
<nUm> O
− O
<nUm> O
s-1 O
. O


the O
fracture B-PRO
surfaces I-PRO
and O
microstructures B-PRO
of O
the O
tested O
specimens O
have O
been O
examined O
using O
optical B-CMT
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
in O
an O
attempt O
to O
correlate O
tensile B-PRO
properties I-PRO
with O
fracture B-PRO
behaviour I-PRO
and O
changes O
in O
microstructure B-PRO
. O


these O
properties O
have O
also O
been O
linked O
to O
the O
liquid O
fraction O
present O
in O
the O
specimen O
based O
on O
data O
found O
in O
the O
literature O
. O


thermal B-PRO
properties I-PRO
and O
phase B-PRO
transformation I-PRO
of O
<nUm> O
mol O
% O
Y2O3-PSZ B-MAT
nanopowders B-DSC
prepared O
by O
a O
co-precipitation B-SMT
process I-SMT


two O
mol O
% O
Y2O3-PSZ B-MAT
precursor O
powders B-DSC
for O
dental B-APL
applications I-APL
were O
synthesized O
using O
ZrOCl2*8H2O B-MAT
and O
Y(NO3)3*6H2O B-MAT
by O
a O
co-precipitation B-SMT
process I-SMT
at O
pH O
<nUm> O
and O
348K O
for O
2h O
. O


the O
thermal B-PRO
properties I-PRO
and O
phase O
transformation O
of O
2Y-PSZ B-MAT
nanocrystallite B-DSC
powder I-DSC
have O
been O
investigated O
using O
a O
thermogravimetric B-CMT
and O
difference B-CMT
scanning I-CMT
calorimeter I-CMT
( O
TG B-CMT
/ I-CMT
DSC I-CMT
) O
, O
fourier B-CMT
transform I-CMT
infrared I-CMT
spectroscopy I-CMT
, O
x-ray B-CMT
diffraction I-CMT
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
, O
selected B-CMT
area I-CMT
electron I-CMT
diffraction I-CMT
and O
dilatometric B-CMT
analysis I-CMT
. O


two O
weaker O
broad O
exothermic O
peaks O
appear O
at O
around O
<nUm> O
and O
718K O
were O
explored O
in O
DSC B-CMT
results O
. O


the O
TG B-CMT
analysis O
shows O
that O
minor O
weight O
loss O
occurs O
from O
<nUm> O
to O
348K O
, O
followed O
by O
three O
major O
weight O
losses O
at O
<nUm> O
, O
<nUm> O
and O
773K O
. O


calcinated B-SMT
at O
<nUm> O
and O
1273K O
, O
the O
crystallized O
phases O
are O
composed O
of O
the O
major O
phase O
of O
tetragonal B-SPL
O2Zr B-MAT
and O
minor O
phase O
of O
monoclinic B-SPL
O2Zr B-MAT
. O


TEM B-CMT
reveals O
that O
the O
tetragonal B-SPL
O2Zr B-MAT
with O
an O
average O
size O
of O
less O
than O
<nUm> O
nm O
is O
mainly O
aggregated O
into O
the O
secondary O
aggregates O
with O
a O
size O
of O
small O
than O
<nUm> O
nm O
. O


the O
sintering B-SMT
curve O
of O
the O
compact O
pellet B-DSC
has O
a O
significant O
shrinkage O
with O
a O
linear O
rate O
of O
<nUm> O
% O
at O
about O
1341K O
. O


maximum O
densification B-PRO
rate I-PRO
happened O
at O
1473K O
, O
demonstrating O
the O
good O
low O
temperature O
sinterability B-PRO
for O
dental B-APL
applications I-APL
. O


thermodynamics B-PRO
of I-PRO
enthalpy I-PRO
, O
volume B-PRO
and O
bulk B-PRO
modulus I-PRO
in O
a-Pu B-MAT


the O
thermodynamic B-PRO
interrelationship I-PRO
between O
thermal B-PRO
and O
elastic B-PRO
properties I-PRO
at O
constant O
pressure O
has O
been O
studied O
from O
the O
point O
of O
view O
of O
an O
empirical O
linear O
relation O
between O
adiabatic B-PRO
bulk I-PRO
modulus I-PRO
( O
BS B-PRO
) O
and O
enthalpy B-PRO
increment I-PRO
( O
DH B-PRO
) O
. O


A O
thermodynamic B-CMT
analysis I-CMT
of O
this O
linear O
scaling O
suggests O
several O
possible O
simple O
relations O
for O
expressing O
the O
isobaric O
temperature O
dependence O
of O
various O
thermal B-PRO
quantities I-PRO
. O


these O
approximations O
invoke O
one O
or O
more O
thermoelastic B-PRO
quantities I-PRO
such O
as O
gruneisen B-PRO
, O
and O
anderson B-PRO
– I-PRO
gruneisen I-PRO
parameters I-PRO
. O


the O
proposed O
BS B-PRO
– O
DH B-PRO
linear O
relation O
together O
with O
the O
auxiliary O
thermoelastic B-CMT
relations I-CMT
deduced O
thereof O
constitute O
a O
self O
- O
consistent O
thermodynamic O
framework O
which O
will O
be O
useful O
in O
a O
critical O
appraisal O
of O
the O
internal O
consistency O
of O
diverse O
sources O
of O
thermal B-PRO
and O
elastic B-PRO
property I-PRO
data O
. O


the O
applicability O
of O
this O
framework O
is O
highlighted O
by O
modelling O
the O
available O
experimental O
data O
on O
thermal B-PRO
and O
elastic B-PRO
properties I-PRO
of O
a-plutonium B-MAT
. O


In O
particular O
, O
a O
successful O
prediction O
of O
its O
molar B-PRO
volume I-PRO
could O
be O
made O
from O
the O
recent O
experimental O
data O
on O
bulk B-PRO
modulus I-PRO
and O
assessed O
information O
on O
enthalpy B-PRO
increment I-PRO
. O


magnetoresistance B-PRO
and O
kondo B-PRO
- I-PRO
like I-PRO
behaviour I-PRO
in O
CoCu19 B-MAT
microwires B-DSC


we O
studied O
the O
effect O
of O
the O
annealing B-SMT
on O
the O
structure B-PRO
, O
transport B-PRO
properties I-PRO
and O
the O
magnetoresistance B-PRO
of O
CoCu B-MAT
glass B-DSC
- I-DSC
coated I-DSC
microwires I-DSC
prepared O
by O
taylor B-SMT
- I-SMT
ulitovsky I-SMT
technique I-SMT
. O


we O
observed O
a O
significant O
enhancement O
of O
the O
magnetoresistance B-PRO
, O
MR B-PRO
, O
effect O
in O
the O
samples O
annealed B-SMT
at O
<nUm> O
° O
C O
. O


on O
the O
other O
hand O
low O
temperature O
annealing B-SMT
( O
<nUm> O
– O
<nUm> O
° O
C O
) O
allowed O
stress O
relaxation O
and O
elimination O
of O
the O
texture O
observed O
in O
as-prepared B-DSC
samples O
, O
although O
only O
slightly O
affects O
the O
MR B-PRO
effect O
. O


annealing B-SMT
considerably O
affects O
the O
temperature O
dependence O
of O
resistivity B-PRO
. O


we O
observed O
resistivity B-PRO
minimum O
in O
both O
as-prepared B-DSC
and O
annealed B-SMT
samples O
associated O
with O
the O
kondo B-PRO
effect I-PRO
. O


this O
minimum O
persists O
even O
under O
magnetic O
field O
in O
as-prepared B-DSC
samples O
. O


In O
annealed B-SMT
sample O
minimum O
disappears O
under O
applied O
magnetic O
field O
. O


observed O
enhancement O
of O
the O
MR B-PRO
effect O
therefore O
must O
be O
attributed O
to O
the O
structural O
changes O
of O
the O
studied O
samples O
. O


effect O
of O
annealing B-SMT
temperature O
on O
the O
microstructure B-PRO
and O
superelasticity B-PRO
of O
Ti-19Zr-10Nb-1Fe B-MAT
alloy B-DSC


the O
effects O
of O
annealing B-SMT
temperature O
on O
the O
microstructure B-PRO
, O
mechanical B-PRO
properties I-PRO
and O
superelasticity B-PRO
of O
Ti-19Zr-10Nb-1Fe B-MAT
alloys B-DSC
were O
investigated O
. O


the O
as-rolled B-SMT
alloy B-DSC
was O
annealed B-SMT
at O
temperatures O
between O
823K O
and O
1173K O
. O


the O
alloy B-DSC
annealed B-SMT
at O
823K O
consisted O
of O
major O
β B-SPL
and O
partial O
α B-SPL
phases O
. O


equiaxed O
β B-SPL
grains O
with O
nanoscale O
ω B-SPL
precipitates O
were O
observed O
in O
the O
alloys B-DSC
annealed B-SMT
above O
873K O
. O


the O
α B-SPL
/ O
β B-SPL
transus B-PRO
temperature I-PRO
and O
recrystallization B-PRO
temperature I-PRO
of O
Ti-19Zr-10Nb-1Fe B-MAT
alloy B-DSC
were O
both O
determined O
to O
be O
between O
823K O
and O
873K O
. O


the O
alloy B-DSC
annealed B-SMT
at O
823K O
exhibits O
a O
higher O
ultimate B-PRO
tensile I-PRO
strengthen I-PRO
and O
a O
lower O
fracture B-PRO
strain I-PRO
than O
other O
alloys B-DSC
, O
due O
to O
the O
residual O
work B-SMT
hardening I-SMT
, O
and O
the O
coarse O
and O
non-uniformly O
distributed O
α B-SPL
precipitates O
. O


Ti-19Zr-10Nb-1Fe B-MAT
alloys B-DSC
annealed B-SMT
at O
873K O
and O
973K O
exhibited O
superelasticity B-PRO
in O
tension O
due O
to O
the O
stress O
induced O
martensitic B-SPL
transformation O
. O


however O
, O
no O
obvious O
superelasticity B-PRO
can O
be O
observed O
during O
the O
tensile B-SMT
deformation I-SMT
of O
the O
alloys B-DSC
annealed B-SMT
at O
823K O
or O
1173K O
, O
implying O
the O
suppression O
of O
stress O
- O
induced O
martensite B-SPL
transformation O
by O
high O
- O
density O
dislocations B-PRO
or O
increased O
β B-SPL
grain B-PRO
size I-PRO
, O
respectively O
. O


the O
alloy B-DSC
annealed B-SMT
at O
873K O
exhibited O
a O
good O
combination O
of O
large O
elongation O
of O
~ O
<nUm> O
% O
, O
low O
young B-PRO
's I-PRO
modulus I-PRO
of O
~ O
<nUm> O
GPa O
, O
high O
ultimate B-PRO
tensile I-PRO
stress I-PRO
of O
~ O
<nUm> O
MPa O
and O
the O
maximum O
superelasticity B-PRO
of O
~ O
<nUm> O
% O
. O


interlayers B-DSC
formed O
in O
the O
carbide B-MAT
coating B-APL
of O
steel B-MAT
by O
chemical B-SMT
vapour I-SMT
deposition I-SMT


the O
sequence O
of O
carbide B-MAT
layers B-DSC
actually O
formed O
when O
steels B-MAT
are O
coated O
with O
either O
chromium B-MAT
carbide I-MAT
or O
titanium B-MAT
carbide I-MAT
by O
chemical B-SMT
vapour I-SMT
deposition I-SMT
( O
CVD B-SMT
) O
has O
been O
studied O
. O


when O
the O
carbon B-MAT
level O
is O
sufficiently O
high O
an O
interlayer O
of O
cementite B-MAT
is O
always O
formed O
. O


the O
results O
also O
show O
, O
however O
, O
that O
the O
CVD B-SMT
coating B-DSC
is O
not O
necessarily O
of O
the O
composition B-PRO
expected O
from O
the O
phase B-PRO
diagram I-PRO
. O


further O
, O
when O
high O
chrome B-MAT
steel I-MAT
is O
coated O
with O
CTi B-MAT
the O
development O
of O
a O
C3Cr7 B-MAT
interlayer B-DSC
, O
which O
is O
possible O
in O
terms O
of O
the O
phase B-PRO
diagram I-PRO
, O
does O
not O
occur O
unless O
sufficient O
time O
is O
allowed O
for O
diffusion O
. O


the O
solubility O
of O
the O
steel B-MAT
substrate B-DSC
and O
the O
interlayers B-DSC
in O
CTi B-MAT
coatings B-APL
is O
also O
considered O
. O


thermal B-CMT
characterization I-CMT
of O
synthesized O
y2O3-CeO2-ZrO2 B-MAT


fine O
powders B-DSC
of O
CeO2 B-MAT
- O
stabilized O
tetragonal B-SPL
zirconia B-MAT
polycrystal B-DSC
( O
Ce B-MAT
- I-MAT
TZP I-MAT
) O
with O
and O
without O
O3Y2 B-MAT
dopants O
were O
fabricated O
through O
a O
coprecipitation B-SMT
process I-SMT
. O


the O
powder B-DSC
characteristics O
were O
evaluated O
by O
thermal B-CMT
differential I-CMT
analysis I-CMT
( O
DTA B-CMT
) O
, O
thermogravimetric B-CMT
analysis I-CMT
( O
TGA B-CMT
) O
, O
infrared B-CMT
spectra I-CMT
( O
IR B-CMT
) O
and O
x-ray B-CMT
diffraction I-CMT
. O


CeO2 B-MAT
doping O
reduces O
the O
phase O
transformation O
temperature O
and O
significantly O
stabilizes O
the O
tetragonal B-SPL
phase O
. O


IR B-CMT
spectra O
imply O
that O
OH O
group O
is O
not O
closely O
related O
to O
the O
formation O
of O
metastable B-PRO
tetragonal B-SPL
phase O
. O


size O
effect O
may O
, O
however O
, O
play O
a O
role O
in O
stabilizing O
the O
tetragonal B-SPL
phase O
. O


No O
appreciable O
distinction O
between O
undoped B-DSC
and O
O3Y2 B-MAT
- O
doped B-DSC
Ce B-MAT
- I-MAT
TZP I-MAT
powders B-DSC
was O
observed O
in O
either O
DTA B-CMT
or O
TGA B-CMT
thermograms O
. O


the O
DTA B-CMT
thermogram O
for O
the O
alcohol O
- O
washed O
gel O
exhibits O
rather O
complicated O
exothermic O
peaks O
as O
compared O
to O
the O
as-synthesized B-DSC
coprecipitates I-DSC
. O


it O
is O
argued O
that O
this O
difference O
is O
attributed O
to O
the O
interaction O
between O
CeO2 B-MAT
and O
ethyl O
alcohol O
during O
the O
fabrication O
process O
. O


magnetic B-PRO
properties I-PRO
of O
Sn B-MAT
<nUm> I-MAT
− I-MAT
x I-MAT
Ni I-MAT
x I-MAT
O I-MAT
<nUm> I-MAT
- O
based O
diluted B-APL
magnetic I-APL
semiconductors I-APL


polycrystalline B-DSC
Sn1-xNixO2 B-MAT
samples O
were O
prepared O
in O
single B-DSC
- I-DSC
phase I-DSC
form O
for O
x O
= O
<nUm> O
and O
<nUm> O
and O
were O
characterized O
using O
several O
experimental O
techniques O
. O


room O
- O
temperature O
ferromagnetism B-PRO
with O
transition B-PRO
temperature I-PRO
, O
T B-PRO
c I-PRO
, O
as O
high O
as O
<nUm> O
K O
was O
observed O
from O
the O
temperature O
variation O
of O
magnetization B-CMT
measurements I-CMT
. O


nanoparticles B-DSC
of O
uniform O
crystalline B-PRO
phase I-PRO
and O
composition B-PRO
were O
identified O
from O
the O
transmission B-CMT
electron I-CMT
microscope I-CMT
images O
. O


the O
initial O
magnetization B-CMT
curves I-CMT
recorded O
at O
<nUm> O
and O
<nUm> O
K O
for O
both O
samples O
could O
be O
analyzed O
based O
on O
the O
bound B-CMT
magnetic I-CMT
polaron I-CMT
( I-CMT
BMP I-CMT
) I-CMT
model I-CMT
, O
where O
the O
size O
of O
the O
BMP B-PRO
is O
found O
to O
increase O
with O
temperature O
. O


the O
magnitude O
of O
electrical B-PRO
resistivity I-PRO
is O
found O
to O
decrease O
with O
doping B-SMT
, O
and O
its O
temperature O
dependence O
could O
be O
explained O
based O
on O
the O
variable B-PRO
range I-PRO
hopping I-PRO
mechanism I-PRO
. O


enhanced O
photocatalytic B-APL
H I-APL
production I-APL
on O
CdS B-MAT
nanorod B-DSC
using O
cobalt B-MAT
- I-MAT
phosphate I-MAT
as O
oxidation B-APL
cocatalyst I-APL


employing O
visible O
light O
responsive O
semiconductor B-PRO
for O
photocatalytic B-APL
hydrogen I-APL
production I-APL
by O
water B-APL
splitting I-APL
is O
an O
efficient O
way O
for O
utilizing O
renewable B-APL
solar I-APL
energy I-APL
to O
solve O
the O
depletion O
of O
fossil O
fuel O
and O
environmental O
contamination O
. O


herein O
, O
we O
report O
enhanced O
photocatalytic B-APL
H I-APL
- I-APL
production I-APL
performance O
over O
CdS B-MAT
nanorod B-DSC
using O
cobalt B-MAT
- I-MAT
phosphate I-MAT
( O
Co-Pi B-MAT
) O
as O
a O
water B-APL
oxdation I-APL
cocatalyst I-APL
. O


the O
optimal O
Co-Pi B-MAT
modified O
CdS B-MAT
nanocomposite B-DSC
photocatalyst B-APL
with O
the O
Co-Pi B-MAT
content O
of O
<nUm> O
mol O
% O
has O
a O
superior O
visible B-PRO
light I-PRO
H I-PRO
- I-PRO
production I-PRO
rate I-PRO
of O
<nUm> O
mmolh-1g-1 O
with O
an O
apparent O
quantum B-PRO
efficiency I-PRO
of O
<nUm> O
% O
at O
<nUm> O
nm O
, O
which O
is O
even O
higher O
than O
that O
of O
1wt O
% O
Pt B-MAT
- O
CdS B-MAT
( O
<nUm> O
mmolh-1g-1 O
) O
under O
the O
same O
conditions O
. O


the O
enhanced O
visible B-PRO
- I-PRO
light I-PRO
photocatalytic I-PRO
H I-PRO
production I-PRO
activity I-PRO
was O
attributed O
to O
the O
hole B-PRO
trapping I-PRO
and I-PRO
collecting I-PRO
ability I-PRO
of O
Co-Pi B-MAT
cocatalyst B-APL
, O
which O
could O
effectively O
suppress O
the O
recombination O
of O
photogenerated B-PRO
electron I-PRO
- I-PRO
hole I-PRO
pairs I-PRO
and O
increase O
the O
electron B-PRO
density I-PRO
for O
hydrogen B-APL
production I-APL
. O


this O
work O
shows O
a O
possibility O
of O
using O
earth O
- O
abundant O
Co-Pi B-MAT
as O
cocatalyst B-APL
for O
enhancing O
photocatalytic B-APL
H I-APL
production I-APL
. O


magnetron B-SMT
sputtered I-SMT
hard B-PRO
a-C B-MAT
coatings B-APL
of O
very O
high O
toughness B-PRO


hydrogen O
- O
free O
amorphous B-DSC
carbon B-MAT
coatings B-APL
of O
high O
hardness B-PRO
( O
≈ O
<nUm> O
GPa O
) O
and O
toughness B-PRO
( O
plasticity B-PRO
from O
<nUm> O
to O
<nUm> O
% O
) O
were O
deposited O
on O
440C B-MAT
steel I-MAT
substrates B-DSC
by O
DC B-SMT
magnetron I-SMT
sputtering I-SMT
at O
target O
power O
density O
of O
<nUm> O
W O
/ O
cm2 O
in O
the O
bias O
range O
from O
− O
<nUm> O
to O
− O
<nUm> O
V O
. O


the O
surface B-PRO
topography I-PRO
, O
hardness B-PRO
and O
tribological B-PRO
behavior I-PRO
of O
the O
coatings B-APL
were O
investigated O
. O


with O
the O
increase O
of O
bias O
voltage O
, O
coating B-APL
hardness B-PRO
and O
surface B-PRO
smoothness I-PRO
increased O
at O
expense O
of O
some O
adhesion B-PRO
strength I-PRO
and O
an O
increase O
of O
coefficient B-PRO
of I-PRO
friction I-PRO
. O


all O
coatings B-APL
showed O
low O
friction B-PRO
in O
humid O
air O
and O
graphitization B-SMT
was O
observed O
after O
a O
high O
number O
of O
rotation O
cycles O
. O


the O
graphitization B-SMT
adds O
more O
benefit O
aside O
from O
reducing O
friction B-PRO
: O
the O
graphite B-MAT
layer B-DSC
can O
considerably O
reduce O
the O
adhesive B-PRO
wear I-PRO
since O
it O
prevents O
the O
asperities O
of O
the O
two O
surfaces B-DSC
to O
be O
adhered O
to O
each O
other O
. O


effect O
of O
A B-PRO
site I-PRO
deficiency I-PRO
of O
LSM B-MAT
cathode B-APL
on O
the O
electrochemical B-PRO
performance I-PRO
of O
CsFOS B-APL
with O
stabilized O
zirconia B-MAT
electrolyte B-APL


the O
effect O
of O
A B-PRO
site I-PRO
deficiency I-PRO
on O
the O
electrochemical B-PRO
performance I-PRO
of O
a O
strontium B-MAT
- O
doped B-DSC
lanthanum B-MAT
manganite I-MAT
( O
LSM B-MAT
) O
cathode B-APL
in O
an O
ScSZ B-MAT
electrolyte B-APL
- O
supported O
solid B-APL
oxide I-APL
fuel I-APL
cell I-APL
( O
SOFC B-APL
) O
was O
investigated O
. O


XRD B-CMT
characterization O
resulted O
in O
a O
series O
of O
(La0.75Sr0.25)xMnO3 B-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
and I-MAT
<nUm> I-MAT
) I-MAT
powders B-DSC
, O
indicating O
that O
the O
Mn3O4 B-MAT
phase O
precipitated O
into O
(LS)xM B-MAT
when O
the O
deficiency B-PRO
value I-PRO
was O
over O
a O
certain O
threshold O
value O
. O


the O
chemical O
reaction O
occurred O
between O
stoichiometric B-DSC
LSM B-MAT
and O
ScSZ B-MAT
due O
to O
the O
high O
chemical B-PRO
potential I-PRO
of I-PRO
La I-PRO
. O


an O
A B-PRO
site I-PRO
deficiency I-PRO
in O
the O
LSM B-MAT
can O
reduce O
the O
chemical B-PRO
potential I-PRO
of I-PRO
La I-PRO
and O
suppress O
the O
interfacial O
reaction O
between O
the O
LSM B-MAT
and O
ScSZ B-MAT
. O


the O
precipitation O
of O
Mn3O4 B-MAT
due O
to O
a O
larger O
A B-PRO
site I-PRO
deficiency I-PRO
leads O
to O
the O
formation O
of O
LZO B-MAT
occurring O
at O
the O
A B-DSC
site I-DSC
- I-DSC
deficient I-DSC
(LS)xM B-MAT
and O
ScSZ B-MAT
. O


an O
A B-DSC
site I-DSC
- I-DSC
deficient I-DSC
(LS)xM B-MAT
cathode B-APL
appears O
to O
possess O
good O
adhesion B-PRO
with O
the O
ScSZ B-MAT
electrolyte B-APL
and O
a O
longer O
active O
TPB B-PRO
length I-PRO
after O
being O
sintered B-SMT
at O
<nUm> O
° O
C O
. O


an O
optimal O
A B-PRO
site I-PRO
deficiency I-PRO
concentration I-PRO
was O
considered O
to O
exist O
in O
the O
electrochemical B-PRO
performance I-PRO
improvement O
of O
the O
A B-DSC
site I-DSC
- I-DSC
deficient I-DSC
LSM B-MAT
cathode B-APL
SOFC I-APL
. O


stacking B-PRO
- I-PRO
fault I-PRO
anomalies I-PRO
and O
the O
measurement O
of O
stacking B-PRO
- I-PRO
fault I-PRO
free I-PRO
energy I-PRO
in O
f.c.c. B-SPL
thin B-DSC
films I-DSC


the O
stacking B-PRO
- I-PRO
fault I-PRO
energy I-PRO
of O
<nUm> B-MAT
stainless I-MAT
steel I-MAT
and O
inconel B-MAT
<nUm> I-MAT
alloy B-DSC
was O
determined O
by O
electron B-CMT
microscopy I-CMT
techniques O
to O
be O
<nUm> O
and O
<nUm> O
ergs O
/ O
cm2 O
, O
respectively O
. O


electron B-CMT
microscopy I-CMT
studies O
also O
revealed O
anomalous O
, O
wide O
stacking B-PRO
faults I-PRO
in O
copper B-MAT
and O
nickel B-MAT
having O
a O
predominantly O
extrinsic O
nature O
. O


bright- B-CMT
and I-CMT
dark- I-CMT
field I-CMT
electron I-CMT
microscopy I-CMT
techniques O
allowed O
the O
faults O
in O
nickel B-MAT
to O
be O
identified O
as O
essentially O
N B-PRO
- I-PRO
layer I-PRO
twins I-PRO
; O
leading O
to O
the O
conclusion O
that O
twin B-PRO
formation O
is O
energetically O
more O
favorable O
in O
high O
stacking B-PRO
- I-PRO
fault I-PRO
energy I-PRO
thin B-DSC
foils I-DSC
than O
single O
intrinsic O
stacking B-PRO
faults I-PRO
. O


the O
formation O
of O
N B-PRO
- I-PRO
layer I-PRO
twins I-PRO
in O
thin B-DSC
foils I-DSC
of O
high O
stacking B-PRO
- I-PRO
fault I-PRO
energy I-PRO
is O
further O
supported O
by O
direct O
observation O
of O
vapor B-SMT
- I-SMT
deposited I-SMT
foils B-DSC
of O
Ni B-MAT
, O
Cu B-MAT
, O
Au B-MAT
and O
Ag B-MAT
. O


In O
addition O
, O
it O
is O
demonstrated O
that O
for O
plane O
- O
strain O
, O
explosive B-SMT
shock I-SMT
- I-SMT
deformation I-SMT
where O
temperature O
effects O
are O
presumed O
to O
be O
negligible O
, O
stacking B-PRO
- I-PRO
fault I-PRO
free I-PRO
energy I-PRO
dominates O
the O
cross-slip O
of O
dislocations B-PRO
leading O
to O
coplanar O
dislocation B-PRO
arrays I-PRO
for O
lSF B-PRO
< O
<nUm> O
ergs O
/ O
cm2 O
, O
and O
dislocation B-PRO
cells I-PRO
for O
λ B-PRO
> O
<nUm> O
ergs O
/ O
cm2 O
. O


high O
- O
pressure O
synthesis O
and O
neutron B-CMT
diffraction I-CMT
investigation O
of O
the O
crystallographic B-PRO
and O
magnetic B-PRO
structure I-PRO
of O
NiO3Te B-MAT
perovskite B-SPL


NiO3Te B-MAT
has O
been O
prepared O
under O
moderate O
pressure O
conditions O
( O
<nUm> O
GPa O
) O
, O
starting O
from O
a O
reactive O
O2Te B-MAT
and O
H2NiO2 B-MAT
mixture O
contained O
in O
a O
sealed O
platinum B-MAT
capsule O
under O
the O
reaction O
conditions O
( O
<nUm> O
° O
C O
for O
<nUm> O
h O
) O
. O


the O
sample O
has O
been O
studied O
by O
neutron B-CMT
powder I-CMT
diffraction I-CMT
( O
NPD B-CMT
) O
data O
and O
magnetization B-CMT
measurements I-CMT
. O


NiO3Te B-MAT
crystallizes O
in O
an O
orthorhombically B-SPL
- O
distorted O
perovskite B-SPL
structure O
( O
space O
group O
pnma B-SPL
) O
with O
the O
unit B-PRO
cell I-PRO
parameters I-PRO
a I-PRO
= O
<nUm> O
Å O
, O
b B-PRO
= O
<nUm> O
Å O
and O
c B-PRO
= O
<nUm> O
Å O
. O


the O
NiO6 B-MAT
octahedral O
network O
is O
extremely O
tilted O
, O
shaping O
a O
trigonal O
- O
pyramidal O
environment O
for O
the O
Te B-MAT
, O
where O
it O
is O
effectively O
coordinated O
to O
three O
oxygen O
atoms O
at O
Te B-PRO
– I-PRO
O I-PRO
distances I-PRO
of O
<nUm> O
Å O
. O


below O
TN B-PRO
≈ O
<nUm> O
K O
, O
it O
experiences O
an O
antiferromagnetic B-PRO
ordering I-PRO
, O
as O
demonstrated O
by O
susceptibility B-PRO
and O
NPD B-CMT
measurements O
. O


above O
the O
neel B-PRO
temperature I-PRO
, O
a O
paramagnetic B-PRO
moment I-PRO
of O
<nUm> O
mB O
/ O
f.u O
. O


and O
thWeiss B-PRO
= O
-199(1) O
K O
are O
obtained O
from O
the O
reciprocal B-PRO
susceptibility I-PRO
. O


below O
TN B-PRO
, O
the O
magnetic B-PRO
reflections I-PRO
observed O
in O
the O
neutron B-CMT
patterns I-CMT
can O
be O
indexed O
with O
a O
propagation B-PRO
vector I-PRO
k I-PRO
= O
<nUm> O
. O


the O
magnetic B-PRO
structure I-PRO
corresponds O
to O
the O
magnetic B-PRO
mode I-PRO
GyFz I-PRO
. O


the O
magnetic B-PRO
moments I-PRO
are O
oriented O
along O
the O
y-direction O
, O
with O
a O
canting B-PRO
along O
the O
z-axis O
. O


this O
ferromagnetic B-PRO
component O
explains O
the O
weak O
ferromagnetism B-PRO
observed O
in O
the O
magnetization B-CMT
isotherms I-CMT
; O
the O
infrequent O
shape O
of O
the O
magnetization B-PRO
cycles O
suggests O
a O
metamagnetic B-PRO
transition I-PRO
below O
<nUm> O
T O
. O


At O
T O
= O
<nUm> O
K O
, O
the O
ordered O
magnetic B-PRO
moment I-PRO
for O
the O
ni2+ O
ions O
is O
<nUm> O
mB O
for O
the O
Gy B-PRO
mode I-PRO
and O
<nUm> O
mB O
for O
the O
fx B-PRO
mode I-PRO
. O


magnetic B-PRO
and O
structural B-PRO
properties I-PRO
of O
RE O
doped B-DSC
co-ferrite B-MAT
( O
REaNd B-MAT
, O
Eu B-MAT
, O
and O
Gd B-MAT
) O
nano-particles B-DSC
synthesized O
by O
co-precipitation B-SMT


cobalt B-MAT
ferrite I-MAT
nano-particles B-DSC
, O
Co0.9RE0.1Fe2O4 B-MAT
, O
with O
three O
different O
rare O
earth O
ions O
( O
Nd B-MAT
, O
Eu B-MAT
, O
and O
Gd B-MAT
) O
were O
prepared O
by O
the O
chemical B-SMT
co-precipitation I-SMT
method I-SMT
. O


x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
analysis O
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
, O
fourier B-CMT
transform I-CMT
infrared I-CMT
( O
FTIR B-CMT
) O
, O
and O
vibrating B-CMT
sample I-CMT
magnetometry I-CMT
were O
carried O
out O
to O
study O
the O
structural B-PRO
and O
magnetic B-PRO
properties I-PRO
, O
respectively O
. O


the O
XRD B-CMT
results O
revealed O
that O
the O
crystal O
size O
is O
about O
<nUm> O
nm O
for O
Gd B-MAT
– I-MAT
Co I-MAT
ferrite I-MAT
, O
which O
is O
close O
to O
the O
particle O
sizes O
observed O
from O
TEM B-CMT
images O
( O
<nUm> O
nm O
) O
. O


the O
FTIR B-CMT
measurements O
between O
<nUm> O
and O
<nUm> O
cm-1 O
confirmed O
the O
intrinsic O
cation O
vibrations O
of O
the O
spinel B-SPL
structure O
. O


the O
results O
showed O
that O
the O
RE O
ions O
increase O
both O
vibrational B-PRO
frequencies I-PRO
and O
bond B-PRO
strength I-PRO
. O


the O
magnetic B-PRO
results O
showed O
that O
the O
highest O
magnetic B-PRO
coercivity I-PRO
and O
the O
loop O
area O
correspond O
to O
the O
Gd B-MAT
– I-MAT
Co I-MAT
ferrite I-MAT
, O
making O
it O
suitable O
for O
hyperthermia B-SMT
treatment I-SMT
. O


also O
, O
the O
curie B-PRO
point I-PRO
was O
decreased O
by O
the O
RE O
ions O
and O
had O
its O
lowest O
value O
for O
Nd B-MAT
– I-MAT
Co I-MAT
ferrite I-MAT
( O
<nUm> O
° O
C O
) O
. O


formation O
and O
properties O
of O
Si2Ti B-MAT
films B-DSC


the O
formation O
of O
titanium B-MAT
silicide I-MAT
from O
polycrystalline B-DSC
silicon B-MAT
and O
metallic B-PRO
titanium B-MAT
was O
studied O
in O
the O
temperature O
range O
<nUm> O
– O
<nUm> O
° O
C O
. O


high O
conductivity B-PRO
films B-DSC
are O
rapidly O
obtained O
at O
<nUm> O
° O
C O
and O
above O
. O


rutherford B-CMT
backscattering I-CMT
and O
auger B-CMT
electron I-CMT
spectroscopy I-CMT
data O
indicate O
that O
only O
Si2Ti B-MAT
is O
obtained O
in O
these O
cases O
. O


oxygen O
present O
in O
the O
original O
titanium B-MAT
film B-DSC
is O
not O
incorporated O
into O
the O
silicide B-MAT
but O
remains O
concentrated O
in O
the O
residual O
metal O
film B-DSC
, O
probably O
in O
the O
form O
of O
an O
oxide B-MAT
. O


this O
layer B-DSC
does O
not O
further O
react O
with O
silicon B-MAT
on O
prolonged O
annealing B-SMT
. O


the O
oxide B-MAT
film B-DSC
also O
shows O
up O
as O
a O
barrier O
towards O
structuring O
the O
silicide B-MAT
by O
plasma B-SMT
etching I-SMT
. O


structures B-PRO
and O
mechanical B-PRO
properties I-PRO
of O
fe- B-MAT
and O
Cr B-MAT
- O
incorporated O
b-Si5AlON7 B-MAT
: O
first B-CMT
- I-CMT
principles I-CMT
study I-CMT


the O
incorporation O
of O
Fe B-MAT
and O
Cr B-MAT
atoms O
into O
b-Si5AlON7 B-MAT
and O
the O
effects O
on O
the O
mechanical B-PRO
properties I-PRO
of O
b-Si5AlON7 B-MAT
were O
theoretically O
studied O
at O
the O
GGA B-CMT
- I-CMT
PBE I-CMT
/ O
USP B-CMT
level O
of O
theory O
. O


the O
incorporation O
of O
Fe B-MAT
and O
Cr B-MAT
atoms O
shows O
remarkable O
site O
preferences O
in O
b-Si5AlON7 B-MAT
. O


the O
binding B-PRO
energies I-PRO
between O
the O
incorporated O
Fe B-MAT
/ O
Cr B-MAT
atoms O
and O
the O
parent O
b-Si5AlON7 B-MAT
are O
~ O
<nUm> O
eV O
, O
indicating O
both O
Fe B-MAT
@ I-MAT
b-Si5AlON7 I-MAT
and O
Cr B-MAT
@ I-MAT
b-Si5AlON7 I-MAT
are O
thermodynamically B-PRO
stable I-PRO
. O


Fe B-MAT
incorporation O
at O
the O
A O
, O
B O
and O
g O
sites O
induces O
remarkable O
increase O
in O
the O
shear B-PRO
modulus I-PRO
and O
young B-PRO
's I-PRO
modulus I-PRO
; O
all O
other O
Fe B-MAT
/ O
Cr B-MAT
incorporated O
b-Si5AlON7 B-MAT
structures O
exhibit O
lowered O
shear B-PRO
modulus I-PRO
and O
young B-PRO
's I-PRO
modulus I-PRO
than O
the O
parent O
b-Si5AlON7 B-MAT
. O


except O
CrG B-MAT
@ I-MAT
b-Si5AlON7 I-MAT
, O
the O
poisson B-PRO
's I-PRO
ratio I-PRO
of O
b-Si5AlON7 B-MAT
decreases O
in O
all O
cases O
of O
Fe B-MAT
and O
Cr B-MAT
incorporation O
. O


structural O
optimisation O
and O
electrochemical B-PRO
behaviour I-PRO
of O
AlCrN B-MAT
coatings B-APL


AlCrN B-MAT
coatings B-APL
were O
deposited O
on O
316L B-MAT
stainless I-MAT
steel I-MAT
by O
multi-arc B-SMT
ion I-SMT
plating I-SMT
. O


the O
phase B-PRO
structures I-PRO
were O
controlled O
and O
optimised O
by O
vacuum B-SMT
annealing I-SMT
at O
<nUm> O
° O
C O
, O
<nUm> O
° O
C O
, O
and O
<nUm> O
° O
C O
, O
each O
for O
2h O
. O


the O
microstructures B-PRO
and O
morphologies B-PRO
of O
these O
coatings B-APL
were O
examined O
by O
x-ray B-CMT
diffraction I-CMT
, O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
, O
and O
scanning B-CMT
electron I-CMT
microscope I-CMT
, O
in O
association O
with O
adhesion B-PRO
strength I-PRO
measurement O
, O
residual B-PRO
stress I-PRO
measurement O
and O
potentiodynamic B-PRO
polarisation I-PRO
with O
<nUm> O
% O
ClNa B-MAT
and O
<nUm> O
% O
H2O4S O
solutions O
. O


results O
show O
that O
the O
solid B-DSC
solution I-DSC
hcp B-SPL
- O
( O
Cr B-MAT
, O
Al)N B-MAT
phase O
of O
as-deposited B-DSC
AlCrN B-MAT
coatings B-APL
decomposes O
into O
hcp B-SPL
- O
AlN B-MAT
and O
CrN B-MAT
phases O
, O
then O
further O
decompose O
into O
N O
and O
Cr B-MAT
with O
increasing O
annealing B-SMT
temperature O
. O


metal O
particles B-DSC
and O
droplets B-DSC
on O
the O
coating B-APL
surface B-DSC
were O
gradually O
removed O
simultaneously O
when O
compared O
with O
as-deposited B-DSC
coatings B-APL
. O


the O
highest O
adhesion B-PRO
strength I-PRO
was O
obtained O
after O
annealing B-SMT
at O
<nUm> O
° O
C O
. O


it O
decreased O
with O
increasing O
annealing B-SMT
temperature O
due O
to O
the O
s-FeCr B-MAT
phase O
and O
Cr2N B-MAT
phases O
, O
and O
the O
residual B-PRO
stress I-PRO
decreasing O
. O


the O
potentiodynamic B-CMT
polarisation I-CMT
measurements I-CMT
showed O
that O
the O
corrosion B-PRO
resistance I-PRO
of O
such O
coatings B-APL
was O
significantly O
improved O
after O
annealing B-SMT
: O
the O
coatings B-APL
annealed B-SMT
at O
<nUm> O
° O
C O
showed O
the O
best O
protective B-PRO
efficiency I-PRO
because O
some O
corrosion B-PRO
resistance I-PRO
phases O
( O
h-AlN B-MAT
, O
Al2O3 B-MAT
, O
CrN B-MAT
, O
and O
Cr2N B-MAT
) O
were O
generated O
. O


A O
novel O
and O
efficient O
surfactant O
- O
free O
synthesis O
of O
rutile B-SPL
O2Ti B-MAT
microflowers B-DSC
with O
enhanced O
photocatalytic B-PRO
activity I-PRO


rutile B-SPL
O2Ti B-MAT
microflowers B-DSC
with O
three O
- O
dimensional O
spiky O
flower O
like O
architecture O
at O
the O
nanometer O
level O
are O
obtained O
by O
a O
fast O
single O
step O
surfactant O
free O
ethylene O
glycol O
based O
solvothermal B-SMT
scheme O
of O
synthesis O
. O


these O
structures O
are O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
field B-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
( O
FESEM B-CMT
) O
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
and O
raman B-CMT
spectroscopy I-CMT
. O


these O
measurements O
confirm O
rutile B-SPL
phase O
of O
O2Ti B-MAT
flowers B-DSC
with O
very O
high O
crystallinity B-PRO
. O


photodegradation O
of O
rhodamine O
B O
with O
UV O
exposure O
is O
investigated O
by O
UV B-CMT
– I-CMT
visible I-CMT
spectroscopy I-CMT
measurements O
in O
the O
presence O
of O
these O
samples O
. O


they O
are O
shown O
to O
have O
high O
photocatalytic B-PRO
activity I-PRO
due O
to O
the O
large O
surface B-PRO
area I-PRO
contributed O
by O
the O
highly O
dense O
spiky O
nanostructures B-DSC
. O


the O
plasmonic O
( O
Au B-MAT
) O
loading O
in O
these O
structures O
are O
shown O
to O
significantly O
enhance O
the O
photocatalytic B-PRO
activity I-PRO
. O


synthesis O
of O
NiO B-MAT
nanowires B-DSC
by O
a O
sol B-SMT
- I-SMT
gel I-SMT
process O


A O
sol B-SMT
- I-SMT
gel I-SMT
process O
and O
subsequent O
calcination B-SMT
was O
employed O
to O
fabricate O
NiO B-MAT
nanowires B-DSC
. O


it O
is O
identified O
that O
the O
obtained O
NiO B-MAT
nanowires B-DSC
are O
hexagonal B-SPL
and O
single B-DSC
crystalline I-DSC
in O
nature O
. O


it O
is O
also O
found O
that O
some O
of O
the O
nanowires B-DSC
branch O
. O


the O
formation B-PRO
mechanism I-PRO
of O
NiO B-MAT
nanowires B-DSC
has O
been O
discussed O
. O


it O
is O
considered O
that O
the O
sol B-SMT
- I-SMT
gel I-SMT
process O
in O
which O
the O
citric O
acid O
acted O
as O
the O
chelate O
played O
a O
critical O
role O
in O
the O
formation O
of O
NiO B-MAT
nanowires B-DSC
, O
and O
the O
vapor B-SMT
– I-SMT
solid I-SMT
( O
VS B-SMT
) O
mechanism O
was O
responsible O
for O
the O
formation O
of O
the O
nanowires B-DSC
. O


two B-PRO
- I-PRO
dimensional I-PRO
conductivity I-PRO
in O
the O
electron O
high-T B-PRO
c I-PRO
superconductor I-PRO
nd2-x B-MAT
Ce I-MAT
x I-MAT
CuO I-MAT
y I-MAT
in O
high O
magnetic O
field O


electron O
high-Tc B-PRO
superconductor I-PRO
Nd2-xCexCuOy B-MAT
single B-DSC
crystals I-DSC
are O
studied O
under O
high O
magnetic O
field O
up O
to O
<nUm> O
T O
. O


the O
observed O
clear O
ln O
T O
dependence O
of O
the O
normal B-PRO
resistivity I-PRO
is O
understood O
by O
the O
two B-CMT
- I-CMT
dimensional I-CMT
weak I-CMT
localization I-CMT
model I-CMT
with O
a O
sheet B-PRO
thickness I-PRO
of O
c B-PRO
/ O
<nUm> O
and O
the O
material O
is O
regarded O
as O
an O
intrinsic O
two B-PRO
- I-PRO
dimensional I-PRO
conduction I-PRO
system O
. O


influence O
of O
gadolinium B-MAT
- O
doping B-SMT
on O
the O
microstructures B-PRO
and O
phase B-PRO
transition I-PRO
characteristics I-PRO
of O
O2V B-MAT
thin B-DSC
films I-DSC


rare O
earth O
(RE)-doping B-SMT
is O
an O
effective O
approach O
for O
modulating O
the O
microstructures B-PRO
and O
properties O
of O
oxide B-MAT
semiconductors B-PRO
. O


we O
investigate O
the O
influence O
of O
gadolinium B-MAT
- O
doping B-SMT
on O
the O
microstructures B-PRO
and O
semiconductor B-PRO
- I-PRO
to I-PRO
- I-PRO
metal I-PRO
transition I-PRO
( O
SMT B-PRO
) O
characteristics O
of O
O2V B-MAT
thin B-DSC
films I-DSC
prepared O
by O
a O
reactively B-SMT
co-sputtering I-SMT
process I-SMT
. O


the O
chemical B-PRO
state I-PRO
of O
Gd B-MAT
, O
microstructures B-PRO
, O
surface B-PRO
morphologies I-PRO
, O
and O
electrical B-PRO
properties I-PRO
of O
Gd B-MAT
- O
doped B-DSC
O2V B-MAT
thin B-DSC
films I-DSC
were O
analyzed O
by O
means O
of O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
, O
x-ray B-CMT
diffraction I-CMT
, O
raman B-CMT
spectroscopy I-CMT
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
, O
and O
four B-CMT
- I-CMT
point I-CMT
probe I-CMT
measurement I-CMT
, O
respectively O
. O


Gd B-MAT
- O
doping B-SMT
obviously O
reduces O
the O
grain B-PRO
size I-PRO
, O
and O
even O
induces O
amorphization O
in O
O2V B-MAT
thin B-DSC
films I-DSC
for O
a O
relatively O
high O
doping B-PRO
level I-PRO
. O


the O
SMT B-PRO
temperature O
of O
Gd B-MAT
- O
doped B-DSC
O2V B-MAT
thin B-DSC
films I-DSC
decreases O
with O
increasing O
the O
doping B-PRO
level I-PRO
( O
x O
, O
the O
concentration O
ratio O
of O
Gd B-MAT
to O
( O
V B-MAT
+ O
Gd B-MAT
) O
) O
. O


furthermore O
, O
the O
SMT B-PRO
feature O
disappears O
as O
x O
increases O
up O
to O
<nUm> O
. O


the O
resistivity B-PRO
of O
the O
Gd B-MAT
- O
doped B-DSC
O2V B-MAT
thin B-DSC
film I-DSC
( O
x O
= O
<nUm> O
) O
is O
lower O
than O
undoped O
O2V B-MAT
thin B-DSC
films I-DSC
by O
nearly O
three O
orders O
. O


this O
can O
be O
attributed O
to O
weakened O
dimerization O
of O
V B-MAT
atoms O
and O
induced O
Gd B-MAT
4f O
state O
above O
the O
lower O
d||V O
band O
due O
to O
Gd B-MAT
- O
doping B-SMT
. O


near B-CMT
- I-CMT
edge I-CMT
x-ray I-CMT
absorption I-CMT
fine I-CMT
- I-CMT
structure I-CMT
studies I-CMT
of O
GaN B-MAT
under O
low B-SMT
- I-SMT
energy I-SMT
nitrogen I-SMT
ion I-SMT
bombardment I-SMT


the O
electronic B-PRO
structure I-PRO
of O
p B-PRO
- I-PRO
type I-PRO
GaN B-MAT
layers B-DSC
exposed O
to O
low B-SMT
- I-SMT
energy I-SMT
nitrogen I-SMT
ion I-SMT
bombardment I-SMT
was O
studied O
by O
near B-CMT
- I-CMT
edge I-CMT
x-ray I-CMT
absorption I-CMT
fine I-CMT
- I-CMT
structure I-CMT
( O
NEXAFS B-CMT
) O
spectroscopy O
. O


it O
was O
found O
that O
ion B-SMT
bombardment I-SMT
lead O
to O
the O
creation O
of O
states O
lying O
below O
the O
nitrogen B-PRO
absorption I-PRO
edge I-PRO
which O
posses O
p-symmetry B-PRO
. O


these O
states O
are O
attributed O
to O
nitrogen O
interstitials O
with O
different O
local O
topologies O
created O
during O
ion B-SMT
bombardment I-SMT
. O


furthermore O
, O
the O
NEXAFS B-CMT
spectra O
also O
shows O
the O
development O
of O
a O
strong O
π B-PRO
∗ I-PRO
-resonance I-PRO
above O
the O
absorption B-PRO
edge I-PRO
with O
increasing O
incident O
nitrogen O
ion O
energy O
. O


this O
peak O
is O
attributed O
to O
the O
formation O
of O
molecular O
nitrogen O
at O
interstitial O
positions O
, O
arising O
from O
a O
build O
up O
of O
nitrogen O
ions O
on O
these O
sites O
. O


growth O
, O
stability B-PRO
and O
decomposition O
of O
Mg2Si B-MAT
ultra-thin B-DSC
films I-DSC
on O
Si B-MAT
( O
<nUm> O
) O


using O
auger B-CMT
electron I-CMT
spectroscopy I-CMT
( O
AES B-CMT
) O
, O
scanning B-CMT
tunneling I-CMT
microscopy I-CMT
/ O
spectroscopy B-CMT
( O
STM B-CMT
/ O
STS B-CMT
) O
and O
low B-CMT
energy I-CMT
electron I-CMT
diffraction I-CMT
( O
LEED B-CMT
) O
, O
we O
report O
an O
in-situ O
study O
of O
amorphous B-DSC
magnesium B-MAT
silicide I-MAT
( O
Mg2Si B-MAT
) O
ultra-thin B-DSC
films I-DSC
grown O
by O
thermally B-SMT
enhanced I-SMT
solid I-SMT
- I-SMT
phase I-SMT
reaction I-SMT
of O
few O
Mg B-MAT
monolayers B-DSC
deposited O
at O
room O
temperature O
( O
RT O
) O
on O
a O
Si(100) B-MAT
surface B-DSC
. O


silicidation B-SMT
of O
magnesium B-MAT
films B-DSC
can O
be O
achieved O
in O
the O
nanometric B-DSC
thickness O
range O
with O
high O
chemical B-PRO
purity I-PRO
and O
a O
high O
thermal B-PRO
stability I-PRO
after O
annealing B-SMT
at O
<nUm> O
° O
C O
, O
before O
reaching O
a O
regime O
of O
magnesium B-MAT
desorption O
for O
temperatures O
higher O
than O
<nUm> O
° O
C O
. O


the O
thermally O
enhanced O
reaction O
of O
one O
Mg B-MAT
monolayer B-DSC
( O
ML B-DSC
) O
results O
in O
the O
appearance O
of O
Mg2Si B-MAT
nanometric B-DSC
crystallites I-DSC
leaving O
the O
silicon B-MAT
surface B-DSC
partially O
uncovered O
. O


for O
thicker O
Mg B-MAT
deposition O
nevertheless O
, O
continuous O
2D B-DSC
silicide B-MAT
films B-DSC
are O
formed O
with O
a O
volcano O
shape O
surface B-PRO
topography I-PRO
characteristic I-PRO
up O
to O
<nUm> O
Mg B-MAT
MLs B-DSC
. O


due O
to O
high O
reactivity O
between O
magnesium B-MAT
and O
oxygen O
species O
, O
the O
thermal B-SMT
oxidation I-SMT
process O
in O
which O
a O
thin O
Mg2Si B-MAT
film B-DSC
is O
fully O
decomposed O
( O
<nUm> O
eV O
band B-PRO
gap I-PRO
) O
into O
a O
magnesium B-MAT
oxide I-MAT
layer B-DSC
( O
<nUm> O
– O
<nUm> O
eV O
band B-PRO
gap I-PRO
) O
is O
also O
reported O
. O


tribological B-PRO
behavior I-PRO
of O
diamond B-MAT
- I-MAT
like I-MAT
carbon I-MAT
produced O
by O
rf B-SMT
- I-SMT
PCVD I-SMT
based O
on O
energetic B-CMT
evaluation I-CMT


two O
types O
of O
diamond B-MAT
- I-MAT
like I-MAT
carbon I-MAT
( O
DLC B-MAT
) O
were O
evaluated O
for O
their O
tribological B-PRO
behavior I-PRO
in O
terms O
of O
the O
tribometer O
input O
energy O
. O


the O
DLC B-MAT
samples O
were O
prepared O
from O
methane O
( O
denoted O
DLC[CH4] B-MAT
) O
or O
benzene O
( O
denoted O
DLC[C6H6] B-MAT
) O
as O
a O
gas O
source O
on O
tungsten-carbide B-MAT
( O
WC B-MAT
) O
substrates B-DSC
by O
radio-frequency B-SMT
plasma I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
( O
rf B-SMT
- I-SMT
PCVD I-SMT
) O
. O


the O
hydrogen B-PRO
contents I-PRO
of O
the O
DLCs B-MAT
were O
measured O
by O
elastic B-CMT
recoil I-CMT
detection I-CMT
analysis I-CMT
( O
ERDA B-CMT
) O
. O


the O
DLC B-MAT
structures O
were O
investigated O
by O
raman B-CMT
spectrometry I-CMT
and O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
. O


the O
basic O
mechanical B-PRO
properties I-PRO
, O
such O
as O
the O
hardness B-PRO
and O
the O
young B-PRO
's I-PRO
modulus I-PRO
, O
were O
obtained O
by O
a O
nano-indenter B-CMT
. O


the O
DLC B-MAT
films B-DSC
against O
alumina B-MAT
were O
tribo O
- O
tested O
by O
a O
ball O
- O
on O
- O
disk O
. O


the O
input O
energy O
was O
calculated O
using O
the O
applied O
load O
, O
the O
friction B-PRO
coefficient I-PRO
, O
and O
the O
sliding B-PRO
distance I-PRO
in O
each O
tribo B-CMT
- I-CMT
test I-CMT
. O


the O
wear B-PRO
behavior I-PRO
of O
the O
DLC[CH4] B-MAT
sample O
was O
better O
than O
that O
of O
the O
DLC[C6H6] B-MAT
, O
even O
though O
the O
hardness B-PRO
of O
DLC[CH4] B-MAT
was O
lower O
than O
that O
of O
DLC[C6H6] B-MAT
. O


the O
wear B-PRO
loss I-PRO
of O
DLC[CH4] B-MAT
and O
DLC[C6H6] B-MAT
was O
evaluated O
by O
the O
input O
energy O
, O
and O
the O
wear B-PRO
resistance I-PRO
difference O
of O
the O
DLCs B-MAT
was O
characterized O
in O
terms O
of O
the O
input O
energy O
. O


synthesis O
of O
micro B-DSC
– I-DSC
mesoporous I-DSC
O2Ti B-MAT
materials O
assembled O
via O
cationic O
surfactants O
: O
morphology B-PRO
, O
thermal B-PRO
stability I-PRO
and O
surface B-PRO
acidity I-PRO
characteristics I-PRO


nano-structured B-DSC
titanium B-MAT
dioxide I-MAT
materials O
were O
synthesized O
hydrothermally B-SMT
( O
Cl4Ti O
, O
353K O
, O
<nUm> O
days O
) O
via O
assembling O
through O
cationic O
surfactants O
in O
particular O
cetyltrimethylammonium O
bromide O
( O
CTAB O
) O
and O
cetylpyridinum O
bromide O
( O
CPB O
) O
. O


the O
bulk B-DSC
chemical B-PRO
and O
phase B-PRO
compositions I-PRO
, O
crystalline B-PRO
structure I-PRO
, O
particle B-PRO
morphology I-PRO
, O
thermal B-PRO
stability I-PRO
and O
surface B-PRO
texturing I-PRO
were O
determined O
by O
means O
of O
x-ray B-CMT
powder I-CMT
diffractometry I-CMT
( O
XRD B-CMT
) O
, O
infrared B-CMT
spectroscopy I-CMT
( O
FTIR B-CMT
) O
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
, O
thermal B-CMT
analyses I-CMT
( O
DTA B-CMT
/ O
TGA B-CMT
) O
and O
N B-CMT
sorptiometry I-CMT
. O


the O
acidity B-PRO
of O
synthesized O
materials O
was O
studied O
by O
FTIR B-CMT
spectroscopy I-CMT
of O
adsorbed O
pyridine O
as O
a O
probe O
molecule O
. O


the O
results O
revealed O
that O
the O
crystallites B-PRO
size I-PRO
of O
all O
materials O
lie O
in O
the O
range O
of O
<nUm> O
– O
<nUm> O
nm O
and O
organized O
in O
a O
morphological B-PRO
structure I-PRO
that O
change O
from O
nano-sized B-DSC
spheres I-DSC
to O
cotton B-DSC
fibrils I-DSC
shape O
. O


surfaces B-DSC
thereon O
exposed O
were O
found O
to O
assume O
high O
specific B-PRO
areas I-PRO
( O
<nUm> O
– O
<nUm> O
m2g-1 O
) O
and O
micro B-DSC
– I-DSC
mesoporous I-DSC
surfaces I-DSC
with O
pore B-PRO
size I-PRO
in O
the O
range O
<nUm> O
– O
<nUm> O
Å O
. O


rutile B-SPL
phase O
was O
only O
produced O
for O
all O
O2Ti B-MAT
materials O
assembled O
by O
cationic O
surfactants O
following O
heating B-SMT
up O
to O
623K O
. O


the O
transformation O
of O
rutile B-SPL
to O
anatase B-SPL
O2Ti B-MAT
was O
coincided O
with O
the O
developed O
interaction O
between O
vanadia B-MAT
and O
titania B-MAT
assembled O
by O
CPB O
template O
. O


the O
V B-MAT
in O
the O
resulting O
vanado B-MAT
- I-MAT
titanate I-MAT
was O
entirely O
incorporated O
in O
O2Ti B-MAT
structure O
. O


the O
as-synthesized B-DSC
phases O
of O
either O
rutile B-SPL
or O
anatase B-SPL
were O
maintained O
after O
calcining B-SMT
at O
973K O
exhibiting O
a O
significant O
thermal B-PRO
stability I-PRO
. O


pyridine O
adsorption O
at O
RT O
indicated O
the O
involvement O
of O
acid O
– O
base O
site O
pair O
on O
all O
O2Ti B-MAT
assembled O
by O
cationic O
templates O
where O
that O
prepared O
by O
conventional O
method O
only O
exposed O
lewis O
and O
bronsted O
acid O
sites O
with O
a O
higher O
tendency O
to O
the O
latter O
comparatively O
. O


synthesis O
and O
structural B-CMT
analysis I-CMT
of O
Cu10Zr7 B-MAT


few O
and O
poor O
experimental O
data O
for O
the O
Cu10Zr7 B-MAT
intermetallic B-PRO
compound O
are O
available O
in O
literature O
. O


up O
to O
now O
, O
its O
crystal B-PRO
structure I-PRO
has O
not O
been O
refined O
yet O
and O
the O
atomic B-PRO
coordinates I-PRO
of O
the O
iso-structural O
Ni10Zr7 B-MAT
phase O
were O
used O
. O


the O
recent O
interest O
of O
near O
equiatomic B-PRO
CuZr B-MAT
alloys B-DSC
, O
as O
high B-APL
temperature I-APL
shape I-APL
memory I-APL
alloys I-APL
( O
HT B-APL
SMAs I-APL
) O
as O
well O
as O
metallic B-PRO
glasses B-DSC
, O
requires O
defined O
structural O
data O
for O
determining O
the O
co-existing O
phases O
in O
bulk B-DSC
material O
properly O
. O


we O
synthetized O
pure B-DSC
polycrystalline I-DSC
Cu10Zr7 B-MAT
alloy B-DSC
and O
both O
its O
cell B-PRO
parameters I-PRO
and O
structure B-PRO
were O
refined O
by O
rietveld B-CMT
method I-CMT
; O
definitively O
correct O
lattice B-PRO
values I-PRO
, O
space B-PRO
group I-PRO
and O
atomic B-PRO
coordinates I-PRO
are O
reported O
and O
discussed O
comparing O
them O
with O
the O
previous O
data O
available O
in O
the O
literature O
. O


characterization O
of O
ultrafine O
Ag B-MAT
– I-MAT
Cu I-MAT
powders B-DSC


supersaturated B-PRO
, O
ultrafine O
Ag B-MAT
– I-MAT
Cu I-MAT
powders B-DSC
prepared O
by O
arc B-SMT
discharge I-SMT
method I-SMT
were O
characterized O
by O
x-ray B-CMT
diffractometry I-CMT
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
. O


peak B-CMT
shape I-CMT
analysis I-CMT
and O
rietveld B-CMT
refinement I-CMT
of O
the O
x-ray B-CMT
diffraction I-CMT
pattern O
were O
applied O
to O
better O
refine O
the O
structure B-PRO
of O
the O
Ag B-MAT
– I-MAT
Cu I-MAT
powders B-DSC
. O


experimental O
results O
indicate O
that O
the O
as-prepared B-DSC
Ag B-MAT
– I-MAT
Cu I-MAT
powders B-DSC
are O
mainly O
comprised O
of O
three O
fcc B-SPL
phases O
with O
different O
Ag B-MAT
contents O
. O


besides O
, O
small O
particles B-DSC
with O
low B-PRO
- I-PRO
symmetry I-PRO
structures I-PRO
were O
also O
observed O
in O
the O
specimen O
. O


the O
formation O
of O
the O
Ag B-MAT
– I-MAT
Cu I-MAT
powders B-DSC
is O
discussed O
. O


silicon B-MAT
nanowires B-DSC
loaded O
with O
iron B-MAT
phosphide I-MAT
for O
effective O
solar B-APL
- I-APL
driven I-APL
hydrogen I-APL
production I-APL


iron B-MAT
phosphide I-MAT
( O
FeP B-MAT
) O
was O
introduced O
onto O
silicon B-MAT
nanowires B-DSC
( O
SiNWs B-MAT
) O
via O
precursor B-SMT
loading I-SMT
and O
phosphorization B-SMT
. O


the O
resultant O
SiNWs B-MAT
/ O
FeP B-MAT
shows O
remarkably O
enhanced O
photoelectrochemical B-APL
hydrogen I-APL
production I-APL
in O
comparison O
with O
bare O
SiNWs B-MAT
. O


the O
solar B-PRO
power I-PRO
conversion I-PRO
efficiency I-PRO
of O
SiNWs B-MAT
/ O
FeP B-MAT
is O
as O
high O
as O
<nUm> O
% O
, O
which O
is O
<nUm> O
% O
of O
that O
of O
SiNWs B-MAT
modified O
with O
Pt B-MAT
particles B-DSC
, O
and O
is O
larger O
than O
those O
of O
silicon B-MAT
- O
based O
photocathodes B-APL
loaded O
with O
other O
non-precious O
electrocatalysts B-APL
such O
as O
transition O
metals O
and O
their O
chalcogenides B-MAT
. O


the O
faster O
reaction B-PRO
rate I-PRO
of O
the O
hydrogen B-APL
evolution I-APL
reaction I-APL
( O
HER B-APL
) O
on O
the O
surface B-DSC
of O
the O
SiNWs B-MAT
/ O
FeP B-MAT
than O
that O
of O
the O
bare O
SiNWs B-MAT
was O
confirmed O
by O
an O
electrochemistry B-CMT
impedance I-CMT
experiment I-CMT
( O
EIS B-CMT
) O
. O


the O
investigations O
over O
the O
EIS B-CMT
spectra O
and O
the O
flat B-PRO
band I-PRO
potential I-PRO
show O
that O
the O
onset O
potential O
of O
cathodic B-PRO
photocurrent I-PRO
is O
mainly O
influenced O
by O
the O
reaction O
rate O
of O
the O
HER B-APL
on O
the O
surface B-DSC
of O
the O
photocathode B-APL
. O


the O
transient B-CMT
photocurrent I-CMT
experiments I-CMT
also O
suggest O
the O
faster O
kinetics O
of O
the O
HER B-APL
on O
the O
surface B-DSC
of O
the O
SiNWs B-MAT
/ O
FeP B-MAT
in O
comparison O
with O
that O
of O
the O
bare O
SiNWs B-MAT
. O


this O
result O
demonstrates O
a O
convenient O
approach O
to O
SiNWs B-MAT
loaded O
with O
a O
highly O
effective O
electrocatalyst B-APL
and O
its O
promising O
application O
potential O
in O
photoelectrochemical B-APL
hydrogen I-APL
generation I-APL
. O


crystal B-PRO
and O
magnetic B-PRO
structure I-PRO
of O
stoichiometric B-DSC
Fe2O4Y B-MAT


the O
crystal B-PRO
structure I-PRO
of O
stoichiometric B-DSC
Fe2O4Y B-MAT
powder B-DSC
has O
been O
studied O
by O
high B-CMT
- I-CMT
resolution I-CMT
neutron I-CMT
diffraction I-CMT
at O
room O
temperature O
, O
<nUm> O
K O
and O
<nUm> O
K. O
rietveld B-CMT
refinements I-CMT
of O
the O
diffraction B-CMT
patterns I-CMT
give O
reasonable O
fits O
with O
space O
group O
r3m B-SPL
( O
hexagonal B-SPL
) O
for O
room O
temperature O
, O
and O
with O
P1 B-SPL
( O
triclinic B-SPL
) O
for O
<nUm> O
K O
. O


however O
, O
the O
pattern O
obtained O
at O
<nUm> O
K O
can O
not O
be O
fitted O
at O
all O
with O
the O
same O
triclinic B-SPL
symmetry O
, O
indicating O
that O
the O
structure O
is O
much O
more O
complicated O
. O


the O
magnetic B-PRO
reflection I-PRO
has O
been O
separated O
from O
those O
complex O
nuclear O
peaks O
by O
the O
polarization B-CMT
analysis I-CMT
. O


the O
magnetic B-PRO
structure I-PRO
is O
also O
fairly O
complicated O
both O
at O
<nUm> O
and O
at O
<nUm> O
K O
. O


tb1-x B-MAT
Dy I-MAT
x I-MAT
fe2 I-MAT
/ O
Fe B-MAT
composites B-DSC
: O
compositional O
effects O
on O
torque B-PRO
response I-PRO


magnetostrictive B-PRO
composites B-DSC
of O
melt B-SMT
- I-SMT
spun I-SMT
Tb1-xDyxFe2 B-MAT
in O
an O
Fe B-MAT
matrix B-DSC
spanning O
the O
entire O
Tb B-MAT
– O
Dy B-MAT
composition B-PRO
range O
( O
x O
= O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
) O
have O
been O
prepared O
by O
hot B-SMT
pressing I-SMT
. O


equal O
volumes O
of O
the O
two O
components O
and O
identical O
consolidation O
procedures O
were O
used O
for O
each O
composition B-PRO
. O


we O
find O
that O
the O
saturation B-PRO
magnetostriction I-PRO
lS I-PRO
, O
a O
measure O
of O
the O
direct O
magnetostrictive B-PRO
effect I-PRO
in O
the O
composites B-DSC
, O
decreases O
monotonically O
, O
but O
not O
linearly O
, O
with O
increasing O
Dy B-PRO
content I-PRO
x O
from O
∼ O
<nUm> O
ppm O
for O
Fe2Tb B-MAT
to O
∼ O
<nUm> O
ppm O
for O
DyFe2 B-MAT
. O


In O
contrast O
, O
the O
torque B-PRO
response I-PRO
rt I-PRO
in O
a O
ring B-APL
sensor I-APL
configuration O
, O
which O
is O
a O
measure O
of O
the O
inverse B-PRO
magnetostrictive I-PRO
effect I-PRO
, O
varies O
by O
an O
order O
of O
magnitude O
over O
the O
composition B-PRO
interval O
and O
exhibits O
a O
peak O
value O
of O
rt B-PRO
= O
<nUm> O
g O
/ O
<nUm> O
ppm O
at O
x O
= O
<nUm> O
. O


this O
value O
is O
almost O
three O
times O
larger O
than O
the O
response O
of O
maraging B-SMT
steel B-MAT
in O
the O
same O
sensor B-APL
configuration O
. O


the O
magnetostrictive B-PRO
ribbon B-DSC
and O
Fe B-MAT
matrix B-DSC
components O
of O
the O
x O
= O
<nUm> O
composite B-DSC
were O
also O
examined O
with O
phase B-CMT
- I-CMT
contrast I-CMT
magnetic I-CMT
force I-CMT
microscopy I-CMT
( O
MFM B-CMT
) O
and O
atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
. O


current B-CMT
- I-CMT
voltage I-CMT
curves I-CMT
from O
a O
Bi2O3Y2O3 B-MAT
oxygen B-PRO
ion I-PRO
conductor I-PRO


the O
solid B-APL
ionic I-APL
conductor I-APL
cell I-APL
Bi2O3Y2O3 B-MAT
was O
used O
to O
the O
current B-PRO
- I-PRO
voltage I-PRO
behaviour I-PRO
under O
different O
temperatures O
and O
voltage O
scan O
rate O
, O
as O
is O
usually O
done O
in O
cyclic B-CMT
voltammetry I-CMT
in O
three B-APL
- I-APL
electrode I-APL
cells I-APL
using O
liquid O
electrolytes O
. O


the O
result O
shows O
that O
the O
reactions O
are O
different O
at O
the O
electrodes B-APL
and O
a O
hysteresis B-PRO
effect I-PRO
is O
presented O
at O
low O
temperatures O
and O
high O
voltage O
scanning O
rates O
. O


effects O
of O
tungsten B-MAT
carbide I-MAT
thermal B-SMT
spray I-SMT
coating B-APL
by O
HP B-SMT
/ O
HVOF B-SMT
and O
hard B-PRO
chromium B-MAT
electroplating B-SMT
on O
AISI B-MAT
<nUm> I-MAT
high O
strength B-PRO
steel B-MAT


In O
cases O
of O
decorative B-APL
and O
functional B-APL
applications I-APL
, O
chromium B-MAT
results O
in O
protection B-APL
against I-APL
wear I-APL
and I-APL
corrosion I-APL
combined O
with O
chemical B-PRO
resistance I-PRO
and O
good O
lubricity B-PRO
. O


however O
, O
pressure O
to O
identify O
alternatives O
or O
to O
improve O
conventional O
chromium B-MAT
electroplating B-SMT
mechanical B-PRO
characteristics I-PRO
has O
increased O
in O
recent O
years O
, O
related O
to O
the O
reduction O
in O
the O
fatigue B-PRO
strength I-PRO
of O
the O
base O
material O
and O
to O
environmental O
requirements O
. O


the O
high O
efficiency B-PRO
and O
fluoride B-PRO
- I-PRO
free I-PRO
hard I-PRO
chromium B-MAT
electroplating B-SMT
is O
an O
improvement O
to O
the O
conventional O
process O
, O
considering O
chemical B-PRO
and O
physical B-PRO
final I-PRO
properties I-PRO
. O


one O
of O
the O
most O
interesting O
, O
environmentally B-PRO
safer I-PRO
and O
cleaner B-PRO
alternatives O
for O
the O
replacement O
of O
hard B-PRO
chrome B-MAT
plating B-APL
is O
tungsten B-MAT
carbide I-MAT
thermal B-SMT
spray I-SMT
coating B-APL
, O
applied O
by O
the O
high B-SMT
velocity I-SMT
oxy-fuel I-SMT
( O
HVOF B-SMT
) O
process O
. O


the O
aim O
of O
this O
study O
was O
to O
analyse O
the O
effects O
of O
the O
tungsten B-MAT
carbide I-MAT
thermal B-SMT
spray I-SMT
coating B-APL
applied O
by O
the O
HP B-SMT
/ O
HVOF B-SMT
process O
and O
of O
the O
high O
efficiency B-PRO
and O
fluoride B-PRO
- I-PRO
free I-PRO
hard I-PRO
chromium B-MAT
electroplating B-SMT
( O
in O
the O
present O
paper O
called O
‘ O
accelerated O
’ O
) O
, O
in O
comparison O
to O
the O
conventional O
hard B-PRO
chromium B-MAT
electroplating B-SMT
on O
the O
AISI B-MAT
<nUm> I-MAT
high O
strength B-PRO
steel B-MAT
behaviour O
in O
fatigue B-CMT
, O
corrosion B-CMT
, O
and O
abrasive B-CMT
wear I-CMT
tests I-CMT
. O


the O
results O
showed O
that O
the O
coatings B-APL
were O
damaging O
to O
the O
AISI B-MAT
<nUm> I-MAT
steel I-MAT
behaviour O
when O
submitted O
to O
fatigue B-CMT
testing I-CMT
, O
with O
the O
tungsten B-MAT
carbide I-MAT
thermal B-SMT
spray I-SMT
coatings B-APL
showing O
the O
better O
performance O
. O


experimental O
data O
from O
abrasive B-CMT
wear I-CMT
tests I-CMT
were O
conclusive O
, O
indicating O
better O
results O
from O
the O
WC B-MAT
coating B-APL
. O


regarding O
corrosion O
by O
salt B-CMT
spray I-CMT
test I-CMT
, O
both O
coatings B-APL
were O
completely O
corroded O
after O
<nUm> O
h O
exposure O
. O


scanning B-CMT
electron I-CMT
microscopy I-CMT
technique O
( O
SEM B-CMT
) O
and O
optical B-CMT
microscopy I-CMT
were O
used O
to O
observe O
crack O
origin O
sites O
, O
thickness O
and O
adhesion B-PRO
in O
all O
the O
coatings B-APL
and O
microcrack B-PRO
density I-PRO
in O
hard B-PRO
chromium B-MAT
electroplatings B-SMT
, O
to O
aid O
in O
the O
results O
analysis O
. O


CoCrFeNiTi B-MAT
- O
based O
high B-PRO
- I-PRO
entropy I-PRO
alloy B-DSC
with O
superior O
tensile B-PRO
strength I-PRO
and O
corrosion B-PRO
resistance I-PRO
achieved O
by O
a O
combination O
of O
additive B-SMT
manufacturing I-SMT
using O
selective B-SMT
electron I-SMT
beam I-SMT
melting I-SMT
and O
solution B-SMT
treatment I-SMT


we O
succeeded O
in O
fabricating O
a O
Co15Cr10Fe10MoNi15Ti5 B-MAT
high O
entropy B-PRO
alloy B-DSC
with O
superior O
tensile B-PRO
strength I-PRO
and O
corrosion B-PRO
resistance I-PRO
by O
a O
combination O
of O
additive B-SMT
manufacturing I-SMT
using O
selective B-SMT
electron I-SMT
beam I-SMT
melting I-SMT
( O
SEBM B-SMT
) O
and O
solution B-SMT
treatment I-SMT
( O
ST B-SMT
) O
. O


the O
SEBM B-SMT
specimens O
exhibited O
superior O
tensile B-PRO
properties I-PRO
to O
those O
of O
the O
corresponding O
casting O
specimen O
. O


furthermore O
, O
the O
tensile B-PRO
properties I-PRO
and O
corrosion B-PRO
properties I-PRO
of O
the O
SEBM B-SMT
specimens O
markedly O
improved O
by O
ST B-SMT
. O


these O
notable O
improvements O
are O
ascribed O
to O
homogeneous O
precipitation O
of O
very O
fine O
particulate O
ordering O
- O
phase O
particles B-DSC
whose O
diameters O
are O
several O
tens O
of O
nanometers O
with O
Ni B-MAT
and O
Ti B-PRO
concentrations I-PRO
. O


the O
solution B-SMT
- I-SMT
treated I-SMT
SEBM I-SMT
specimens O
also O
exhibited O
both O
high O
strength B-PRO
and O
high O
pitting B-PRO
potential I-PRO
, O
which O
in O
combination O
are O
superior O
to O
the O
conventional O
alloys B-DSC
used O
in O
severe B-APL
corrosion I-APL
environments I-APL
. O


synthesis O
of O
Li2O5Si2 B-MAT
- O
coated B-DSC
CoLi5MnNi3O10 B-MAT
cathode B-APL
materials O
with O
enhanced O
high O
- O
voltage O
electrochemical B-PRO
properties I-PRO
for O
lithium B-APL
- I-APL
ion I-APL
batteries I-APL


Ni B-MAT
- O
rich O
ternary O
layered B-DSC
oxides B-MAT
, O
( O
LiNix B-MAT
[M]1-xO2 I-MAT
, I-MAT
x I-MAT
≥ I-MAT
<nUm> I-MAT
, I-MAT
m I-MAT
= I-MAT
Co I-MAT
and I-MAT
Mn I-MAT
) I-MAT
, O
have O
become O
one O
of O
the O
mainstream O
cathode B-APL
materials O
for O
next O
- O
generation O
lithium B-APL
- I-APL
ion I-APL
batteries I-APL
due O
to O
their O
high O
capacity B-PRO
and O
cost B-PRO
efficiency I-PRO
compared O
with O
CoLiO2 B-MAT
. O


however O
, O
the O
high O
- O
voltage O
operation O
of O
the O
Ni B-MAT
- O
rich O
oxides B-MAT
( O
> O
<nUm> O
V O
) O
required O
for O
high O
capacity B-PRO
is O
inevitably O
accompanied O
with O
a O
rapid O
capacity B-PRO
decay I-PRO
over O
numerous O
cycles O
. O


In O
this O
work O
, O
we O
reported O
a O
surface B-DSC
coating B-APL
of O
CoLi5MnNi3O10 B-MAT
with O
Li2O5Si2 B-MAT
via O
a O
facile O
and O
efficient O
synthetic O
approach O
, O
which O
involves O
the O
employment O
of O
silicic O
acid O
( O
H2O3Si O
) O
as O
remover O
to O
react O
with O
the O
surface O
residual O
lithium B-MAT
compounds O
( O
e.g. O
CLi2O3 B-MAT
and O
HLiO B-MAT
) O
of O
CoLi5MnNi3O10 B-MAT
and O
consequent O
formation O
of O
a O
robust O
and O
complete O
li+ O
- O
conductive B-PRO
Li2O5Si2 B-MAT
protective B-APL
coating I-APL
layer B-DSC
. O


the O
structure B-PRO
and O
morphology B-PRO
of O
the O
coated B-SMT
cathode B-APL
materials O
are O
fully O
characterized O
by O
using O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
. O


compared O
with O
the O
pristine O
CoLi5MnNi3O10 B-MAT
, O
coating B-APL
with O
the O
li+ O
- O
conductive B-PRO
Li2O5Si2 B-MAT
is O
found O
to O
be O
very O
effective O
for O
improving O
the O
rate B-PRO
capability I-PRO
of O
the O
CoLi5MnNi3O10 B-MAT
when O
evaluated O
at O
a O
high O
cut O
- O
off O
voltage O
up O
to O
<nUm> O
V O
. O


specifically O
, O
<nUm> O
wt. O
% O
H2O3Si B-SMT
- I-SMT
treated I-SMT
CoLi5MnNi3O10 B-MAT
electrode B-APL
exhibits O
high O
discharge B-PRO
specific I-PRO
capacities I-PRO
of O
<nUm> O
and O
<nUm> O
mAh O
g-1 O
at O
<nUm> O
and O
<nUm> O
C O
, O
respectively O
, O
whereas O
the O
pristine O
electrode B-APL
only O
shows O
<nUm> O
and O
<nUm> O
mAh O
 O
g-1 O
. O


besides O
, O
the O
surface B-DSC
- I-DSC
modified I-DSC
CoLi5MnNi3O10 B-MAT
electrode B-APL
also O
manifests O
an O
enhanced O
long O
- O
term O
cycling B-PRO
stability I-PRO
( O
<nUm> O
% O
capacity B-PRO
retention I-PRO
after O
<nUm> O
cycles O
at O
<nUm> O
C O
) O
, O
much O
better O
than O
the O
pristine O
electrode B-APL
( O
<nUm> O
% O
retention B-PRO
) O
due O
to O
the O
robust O
protective O
effect O
of O
the O
Li2O5Si2 B-MAT
coating B-APL
layer B-DSC
. O


all O
these O
results O
indicate O
that O
the O
Li2O5Si2 B-MAT
- O
coated B-SMT
CoLi5MnNi3O10 B-MAT
will O
be O
a O
promising O
cathode B-APL
material O
for O
lithium B-APL
- I-APL
ion I-APL
batteries I-APL
with O
fascinating O
electrochemical B-PRO
energy I-PRO
storage I-PRO
capabilities I-PRO
. O


TEM B-CMT
analysis O
of O
irradiation B-SMT
- O
induced O
interaction O
layers B-DSC
in O
coated B-DSC
MoU B-MAT
/ O
x O
/ O
Al B-MAT
trilayer B-DSC
systems O
( O
x O
= O
Ti B-MAT
, O
Nb B-MAT
, O
Zr B-MAT
, O
and O
Mo B-MAT
) O


uranium B-MAT
- I-MAT
molybdenum I-MAT
( O
MoU B-MAT
) O
alloy B-DSC
powder I-DSC
embedded O
in O
an O
Al B-MAT
matrix B-DSC
is O
considered O
as O
a O
promising O
candidate O
for O
fuel B-APL
conversion I-APL
of O
research B-APL
reactors I-APL
. O


A O
modified O
system O
with O
a O
diffusion B-PRO
barrier I-PRO
x O
as O
coating B-APL
, O
MoU B-MAT
/ O
x O
/ O
Al B-MAT
trilayer B-DSC
( O
x O
= O
Ti B-MAT
, O
Zr B-MAT
, O
Nb B-MAT
, O
and O
Mo B-MAT
) O
, O
has O
been O
investigated O
to O
suppress O
interdiffusion O
between O
MoU B-MAT
and O
the O
Al B-MAT
matrix B-DSC
. O


the O
trilayer B-DSC
systems O
were O
tested O
by O
swift B-SMT
heavy I-SMT
ion I-SMT
irradiation I-SMT
, O
the O
thereby O
created O
interaction O
zone O
has O
been O
analyzed O
by O
scanning B-CMT
transmission I-CMT
electron I-CMT
microscopy I-CMT
( O
STEM B-CMT
) O
and O
energy B-CMT
- I-CMT
dispersive I-CMT
x-ray I-CMT
spectroscopy I-CMT
( O
EDX B-CMT
) O
. O


detailed O
structural B-CMT
characterization I-CMT
are O
presented O
and O
compared O
to O
earlier O
m-XRD B-CMT
analysis O
. O


synthesis O
, O
structure B-PRO
and O
spectro B-CMT
- I-CMT
microscopic I-CMT
studies I-CMT
of O
polycrystalline B-DSC
Hg B-MAT
x I-MAT
pb1- I-MAT
x I-MAT
S I-MAT
thin B-DSC
films I-DSC
grown O
by O
a O
chemical B-SMT
route I-SMT


the O
deposition O
history O
, O
growth B-PRO
mechanism I-PRO
, O
structural B-PRO
, O
optical B-PRO
and O
surface B-PRO
morphological I-PRO
features I-PRO
of O
chemically B-SMT
deposited I-SMT
HgxPb1-xS B-MAT
( I-MAT
0x0.2 I-MAT
) I-MAT
thin B-DSC
films I-DSC
prepared O
under O
optimized O
conditions O
are O
presented O
. O


effect O
of O
growth B-PRO
parameter I-PRO
( O
x B-PRO
) O
on O
the O
film B-DSC
quality O
and O
properties O
has O
been O
studied O
. O


the O
resulting O
films B-DSC
appeared O
smooth O
, O
uniform O
and O
well O
adherent O
to O
the O
substrate B-DSC
and O
diffusely O
reflecting O
with O
color O
changing O
from O
grayish O
- O
brown O
to O
light O
- O
brown O
as O
x O
was O
varied O
from O
<nUm> O
to O
<nUm> O
. O


the O
EDS B-CMT
analysis O
showed O
replacement O
of O
pb2+ O
atoms O
from O
PbS B-MAT
lattice O
by O
hg2+ O
atoms O
. O


the O
x-ray B-CMT
diffraction I-CMT
revealed O
crystalline B-DSC
nature O
with O
zinc B-SPL
blende I-SPL
type O
structure O
with O
predominant O
( O
<nUm> O
) O
orientation O
. O


both O
interplanar B-PRO
distance I-PRO
and O
lattice B-PRO
parameter I-PRO
for O
( O
<nUm> O
) O
and O
( O
<nUm> O
) O
reflections O
increased O
with O
x O
in O
the O
alloyed B-SMT
range O
( O
0x0.035 O
) O
. O


SEM B-CMT
observations O
showed O
non-uniform O
distribution O
of O
well O
defined O
spherical O
grains O
; O
some O
of O
them O
diffused O
to O
form O
agglomeration O
/ O
globule O
like O
structure O
. O


analysis O
of O
the O
transmission B-CMT
spectra O
in O
the O
<nUm> O
– O
<nUm> O
nm O
wavelength O
range O
showed O
<nUm> O
– O
<nUm> O
% O
transmittance B-PRO
, O
absorption B-PRO
coefficient I-PRO
of O
the O
order O
of O
<nUm> O
– O
<nUm> O
cm-1 O
and O
energy B-PRO
gap I-PRO
increased O
from O
<nUm> O
eV O
to O
<nUm> O
eV O
respectively O
for O
the O
change O
of O
x O
from O
<nUm> O
to O
<nUm> O
. O


photoluminescence B-CMT
studies O
of O
chalcopyrite B-SPL
and O
orthorhombic B-SPL
AgInS2 B-MAT
thin B-DSC
films I-DSC
deposited O
by O
spray B-SMT
pyrolysis I-SMT
technique O


chalcopyrite B-SPL
( O
ch B-SPL
) O
and O
orthorhombic B-SPL
( O
o B-SPL
) O
AgInS2 B-MAT
thin B-DSC
films I-DSC
were O
prepared O
by O
spray B-SMT
pyrolysis I-SMT
using O
a O
ratio O
of O
[Ag] B-PRO
/ I-PRO
[In] I-PRO
= O
<nUm> O
and O
<nUm> O
respectively O
. O


AgInS2 B-MAT
polycrystalline B-DSC
material O
was O
annealing B-SMT
in O
a O
sulphur O
atmosphere O
at O
<nUm> O
° O
C O
for O
<nUm> O
h O
. O


the O
estimated O
optical B-PRO
gap I-PRO
energies I-PRO
were O
<nUm> O
and O
<nUm> O
eV O
for O
ch B-SPL
– O
AgInS2 B-MAT
and O
<nUm> O
eV O
for O
o B-SPL
– O
AgInS2 B-MAT
. O


all O
the O
deposited O
films B-DSC
exhibited O
n B-PRO
- I-PRO
type I-PRO
conductivity I-PRO
. O


photoluminescence B-CMT
( O
PL B-CMT
) O
studies O
reveal O
in O
both O
phases O
several O
PL B-CMT
bands O
. O


In O
ch B-SPL
– O
AgInS2 B-MAT
the O
PL B-CMT
bands O
were O
observed O
to O
be O
centered O
at O
<nUm> O
, O
<nUm> O
and O
<nUm> O
eV O
at O
<nUm> O
K O
and O
an O
excitation O
intensity O
of O
<nUm> O
W O
cm-2 O
. O


the O
<nUm> O
eV O
emission O
is O
related O
with O
indium B-PRO
vacancies I-PRO
whereas O
the O
other O
emissions O
( O
<nUm> O
and O
<nUm> O
eV O
) O
are O
related O
with O
a O
donor B-PRO
– I-PRO
acceptor I-PRO
pair I-PRO
recombination I-PRO
and O
free B-PRO
to I-PRO
bound I-PRO
transition I-PRO
respectively O
. O


A O
new O
PL B-CMT
band O
was O
observed O
in O
the O
annealed B-SMT
sample O
, O
this O
band O
was O
centered O
at O
<nUm> O
eV O
at O
<nUm> O
K O
and O
it O
is O
related O
to O
the O
transition O
between O
a O
closed O
level O
to O
the O
conduction B-PRO
band I-PRO
and O
the O
splitting B-PRO
valence I-PRO
band I-PRO
( O
<nUm> O
eV O
) O
. O


PL B-CMT
bands O
in O
o B-SPL
– O
AgInS2 B-MAT
samples O
were O
observed O
at O
<nUm> O
and O
<nUm> O
eV O
at O
<nUm> O
K O
and O
are O
related O
with O
a O
free B-PRO
to I-PRO
bound I-PRO
transition I-PRO
. O


finally O
o B-SPL
– O
AgInS2 B-MAT
shows O
two O
emission B-PRO
bands I-PRO
located O
at O
<nUm> O
and O
<nUm> O
eV O
, O
the O
o B-SPL
– O
AgInS2 B-MAT
annealed B-SMT
sample O
in O
a O
sulphur O
atmosphere O
showed O
a O
new O
PL B-CMT
band O
located O
at O
<nUm> O
eV O
at O
<nUm> O
K O
, O
this O
band O
is O
related O
with O
an O
energy O
transition O
between O
a O
level O
near O
the O
conduction B-PRO
band I-PRO
to O
the O
splitting B-PRO
valence I-PRO
band I-PRO
( O
<nUm> O
eV O
) O
. O


bismuth B-MAT
telluride I-MAT
quantum B-DSC
dot I-DSC
assisted O
titanium B-MAT
oxide I-MAT
microflowers B-DSC
for O
efficient O
photoelectrochemical B-PRO
performance I-PRO


the O
3D B-DSC
O2Ti B-MAT
microflowers B-DSC
sensitized O
by O
Bi2Te3 B-MAT
nanoparticles B-DSC
such O
novel O
nanostructure B-DSC
employed O
by O
two B-SMT
step I-SMT
synthesis I-SMT
strategy I-SMT
such O
as O
hydrothermal B-SMT
method I-SMT
and O
potentiostatic B-SMT
electrodeposition I-SMT
technique O
. O


herein O
we O
have O
successfully O
synthesized O
Bi2Te3 B-MAT
nanoparticles B-DSC
loaded O
O2Ti B-MAT
photoanode B-APL
for O
quantum B-APL
dot I-APL
- I-APL
sensitized I-APL
solar I-APL
cells I-APL
( O
QDSSCs B-APL
) O
. O


the O
combined O
3D B-DSC
and O
1D B-DSC
hierarchical I-DSC
structure B-PRO
has O
significant O
potential O
as O
an O
efficient O
photoanode B-APL
for O
QDSSC B-APL
. O


A O
rapid O
synthesis O
of O
high O
aspect O
ratio O
copper B-MAT
nanowires B-DSC
for O
high B-APL
- I-APL
performance I-APL
transparent I-APL
conducting I-APL
films I-APL


this O
communication O
presents O
a O
way O
to O
produce O
copper B-MAT
nanowires B-DSC
with O
aspect O
ratios O
as O
high O
as O
<nUm> O
in O
<nUm> O
min O
, O
and O
describes O
the O
growth O
processes O
responsible O
for O
their O
formation O
. O


these O
nanowires B-DSC
were O
used O
to O
make O
transparent B-APL
conducting I-APL
films I-APL
with O
a O
transmittance B-PRO
> O
<nUm> O
% O
at O
a O
sheet B-PRO
resistance I-PRO
< O
<nUm> O
Ω O
sq-1 O
. O


theoretical O
model O
and O
computer O
simulation O
of O
metglas B-MAT
/ O
PZT B-MAT
magnetoelectric B-PRO
composites B-DSC
for O
voltage B-APL
tunable I-APL
inductor I-APL
applications I-APL


control O
of O
magnetic B-PRO
permeability I-PRO
through O
voltage O
promises O
to O
create O
novel B-APL
electronic I-APL
devices I-APL
, O
such O
as O
voltage B-APL
tunable I-APL
inductors I-APL
. O


the O
relationship O
between O
the O
structure B-PRO
and O
property O
of O
voltage B-APL
tunable I-APL
inductors I-APL
comprising O
of O
magnetoelectric B-PRO
metglas B-MAT
/ O
PZT B-MAT
composites B-DSC
and O
the O
underlying O
domain B-PRO
- I-PRO
level I-PRO
mechanisms I-PRO
are O
investigated O
using O
theoretical O
analysis O
, O
computer O
simulation O
, O
and O
complementary O
experiments O
. O


A O
theoretical O
model O
is O
developed O
to O
analyze O
the O
roles O
of O
material O
anisotropy B-PRO
, O
inductor B-APL
shape O
, O
and O
stress B-PRO
in O
controlling O
the O
metglas B-MAT
permeability B-PRO
and O
its O
tunability B-PRO
. O


the O
analysis O
reveals O
key O
roles O
played O
by O
stress B-PRO
- I-PRO
induced I-PRO
anisotropy I-PRO
and O
the O
resultant O
ground B-PRO
magnetization I-PRO
state I-PRO
, O
and O
predicts O
two O
stress O
- O
dependent O
regimes O
of O
inductance B-PRO
tunability I-PRO
. O


the O
theory O
is O
validated O
using O
systematic O
experiments O
. O


the O
experimental O
results O
are O
used O
to O
determine O
the O
material O
and O
physical B-PRO
parameters I-PRO
. O


to O
further O
elucidate O
the O
underlying O
domain O
- O
level O
mechanisms O
responsible O
for O
controlling O
the O
behavior O
of O
voltage B-APL
tunable I-APL
inductor I-APL
, O
phase B-CMT
field I-CMT
modeling I-CMT
is O
employed O
to O
simulate O
domain B-PRO
microstructures I-PRO
and O
magnetic B-PRO
permeability I-PRO
of O
metglas B-MAT
/ O
PZT B-MAT
composites B-DSC
under O
varying O
voltage O
. O


the O
computational O
results O
confirm O
the O
two O
regimes O
of O
inductance B-PRO
tunability I-PRO
and O
the O
controlling O
role O
of O
stress B-PRO
- I-PRO
induced I-PRO
anisotropy I-PRO
. O


the O
findings O
suggest O
engineering O
of O
internal B-PRO
bias I-PRO
stress I-PRO
as O
an O
effective O
means O
to O
optimize O
the O
inductance B-PRO
tunability I-PRO
of O
magnetoelectric B-PRO
metglas B-MAT
/ O
PZT B-MAT
composites B-DSC
. O


mixed O
anionic B-PRO
conduction I-PRO
in O
ClFPb B-MAT


we O
have O
measured O
transference B-PRO
numbers I-PRO
of O
fluoride O
ions O
and O
chloride O
ions O
in O
undoped B-DSC
and O
doped B-DSC
samples O
of O
ClFPb B-MAT
. O


the O
results O
indicate O
pure O
anionic B-PRO
conduction I-PRO
. O


the O
electrical B-PRO
conductivity I-PRO
of O
doped B-DSC
single I-DSC
crystals I-DSC
support O
the O
assumption O
that O
the O
thermal B-PRO
defects I-PRO
in O
ClFPb B-MAT
are O
of O
the O
schottky O
- O
type O
. O


the O
defect B-PRO
chemistry I-PRO
of O
ClFPb B-MAT
involved O
is O
described O
. O


the O
role O
of O
strain O
in O
silicon B-MAT
- O
based O
molecular B-SMT
beam I-SMT
epitaxy I-SMT


since O
the O
Si B-MAT
lattice B-PRO
constant I-PRO
is O
the O
smallest O
among O
common O
semiconductors B-PRO
, O
Si B-MAT
- O
based O
heteroepitaxy O
is O
almost O
synonymous O
with O
strained O
layer O
epitaxy O
. O


In O
this O
article O
, O
we O
discuss O
the O
material O
and O
electronic O
aspects O
of O
strain O
, O
the O
energetics O
and O
a O
variety O
of O
kinetic O
pathways O
for O
strain O
relaxation O
, O
and O
several O
representative O
electronic B-APL
device I-APL
applications I-APL
of O
Si B-MAT
- O
based O
heterostructures B-DSC
. O


we O
also O
briefly O
compare O
molecular B-SMT
beam I-SMT
epitaxy I-SMT
( O
MBE B-SMT
) O
with O
other O
epitaxial O
growth O
techniques O
such O
as O
chemical B-SMT
vapor I-SMT
deposition I-SMT
( O
CVD B-SMT
) O
. O


synthesis O
and O
characterization O
of O
OZn B-MAT
– I-MAT
In2O3 I-MAT
junction B-DSC
structure I-DSC


rod B-DSC
- I-DSC
shaped I-DSC
OZn B-MAT
– I-MAT
In2O3 I-MAT
junction B-DSC
structure I-DSC
was O
obtained O
by O
bottom O
up O
approach O
of O
nanostructure B-DSC
fabrication O
and O
characterization O
. O


In2Zn3 B-MAT
alloy B-DSC
was O
evaporated O
in O
a O
tube B-SMT
furnace I-SMT
of O
<nUm> O
° O
C O
temperature O
and O
<nUm> O
× O
10-1Torr O
vacuum O
. O


the O
deposit O
collected O
on O
silicon B-MAT
wafer B-DSC
placed O
down O
stream O
of O
the O
tube B-SMT
furnace I-SMT
was O
examined O
by O
scanning B-CMT
electron I-CMT
microscope I-CMT
( O
SEM B-CMT
) O
, O
energy B-CMT
dispersive I-CMT
x-ray I-CMT
spectroscopy I-CMT
( O
EDS B-CMT
) O
, O
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
. O


SEM B-CMT
and O
EDS B-CMT
results O
proved O
the O
existence O
of O
rod B-DSC
- I-DSC
shaped I-DSC
OZn B-MAT
– I-MAT
In2O3 I-MAT
junction B-DSC
structure I-DSC
. O


TEM B-CMT
analysis O
revealed O
the O
orientation O
relationship O
between O
OZn B-MAT
and O
In2O3 B-MAT
. O


it O
is O
suggested O
that O
this O
structure O
is O
formed O
via O
vapor B-SMT
– I-SMT
liquid I-SMT
– I-SMT
solid I-SMT
process I-SMT
and O
the O
suitable O
combination O
of O
source O
temperature O
, O
tube O
vacuum O
, O
and O
substrate B-DSC
temperature O
is O
the O
key O
for O
the O
formation O
of O
such O
novel O
structure O
. O


this O
report O
demonstrates O
the O
possibility O
of O
fabricating O
junction B-DSC
structure I-DSC
by O
bottom O
up O
approach O
, O
expanding O
its O
capability O
of O
fabricating O
structure O
with O
desired O
properties O
. O


pressure O
effect O
for O
metal B-PRO
– I-PRO
insulator I-PRO
transition I-PRO
in O
filled O
skutterudite B-SPL
P12Ru4Sm B-MAT


we O
have O
measured O
the O
electrical B-PRO
resistance I-PRO
of O
the O
filled O
skutterudite B-SPL
P12Ru4Sm B-MAT
, O
which O
exhibits O
a O
metal B-PRO
– I-PRO
insulator I-PRO
( I-PRO
MI I-PRO
) I-PRO
transition I-PRO
at O
TMI B-PRO
= O
<nUm> O
K O
, O
at O
high O
pressures O
up O
to O
15GPa O
. O


with O
increasing O
pressure O
, O
the O
semiconductor B-PRO
- I-PRO
like I-PRO
resistance I-PRO
was O
suppressed O
. O


we O
observed O
metallic B-PRO
behavior I-PRO
in O
the O
resistance B-PRO
above O
3.5GPa O
, O
while O
semiconductor B-PRO
- O
like O
increase O
of O
the O
resistance B-PRO
was O
observed O
below O
2K O
. O


two O
characteristic O
anomalies O
below O
TMI B-PRO
, O
a O
peak O
and O
a O
kink O
in O
the O
resistance B-PRO
curve I-PRO
, O
are O
observed O
at O
T1 B-PRO
and O
T2 B-PRO
. O


the O
thermodynamic B-PRO
and O
thermoelectric B-PRO
properties I-PRO
of O
LixTiS2 B-MAT
and O
LixCoO2 B-MAT


the O
partial B-PRO
thermodynamic I-PRO
functions I-PRO
DHLi I-PRO
and O
DS B-PRO
Li I-PRO
for O
LixTi1.03S2 B-MAT
( I-MAT
<nUm> I-MAT
⩽ I-MAT
x I-MAT
⩽ I-MAT
<nUm> I-MAT
) I-MAT
and O
Co20Li19O40 B-MAT
were O
obtained O
from O
EMF B-CMT
- I-CMT
temperature I-CMT
measurements I-CMT
( O
T O
= O
<nUm> O
− O
<nUm> O
° O
C O
) O
. O


for O
LixTi1.03S2 B-MAT
, O
the O
x-dependence O
of O
these O
quantities O
is O
discussed O
in O
relation O
to O
a O
semiempirical O
expression O
for O
the O
EMF-x B-PRO
relation I-PRO
. O


the O
electronic O
component O
of O
the O
thermoelectric B-PRO
power I-PRO
in O
LixTi1.03S2 B-MAT
( I-MAT
<nUm> I-MAT
⩽ I-MAT
× I-MAT
⩽ I-MAT
<nUm> I-MAT
, I-MAT
T I-MAT
= I-MAT
<nUm> I-MAT
− I-MAT
<nUm> I-MAT
° I-MAT
C I-MAT
) I-MAT
and O
LixCoO2 B-MAT
( I-MAT
<nUm> I-MAT
⩽ I-MAT
x I-MAT
⩽ I-MAT
<nUm> I-MAT
, I-MAT
T I-MAT
= I-MAT
<nUm> I-MAT
− I-MAT
<nUm> I-MAT
° I-MAT
C I-MAT
) I-MAT
was O
determined O
. O


from O
the O
sign O
of O
the O
( O
electronic B-PRO
) O
seebeck B-PRO
coefficient I-PRO
it O
followed O
that O
LixTi1.03S2 B-MAT
is O
a O
n B-PRO
- I-PRO
type I-PRO
and O
LixCoO2 B-MAT
a O
p- B-PRO
type I-PRO
electronic I-PRO
conductor I-PRO
. O


the O
influence O
of O
the O
amount O
of O
inserted O
lithium B-MAT
and O
temperature O
dependence O
on O
the O
seebeck B-PRO
coefficient I-PRO
is O
discussed O
. O


A O
new O
method O
to O
determine O
the O
ionic B-PRO
heat I-PRO
of I-PRO
transport I-PRO
directly O
from O
the O
ionic B-PRO
seebeck I-PRO
co-efficient I-PRO
was O
developed O
. O


this O
method O
was O
applied O
to O
LixTi1.03S2 B-MAT
( I-MAT
<nUm> I-MAT
⩽ I-MAT
x I-MAT
⩽ I-MAT
<nUm> I-MAT
, I-MAT
T I-MAT
= I-MAT
<nUm> I-MAT
− I-MAT
<nUm> I-MAT
° I-MAT
C I-MAT
) I-MAT
. O


the O
heat B-PRO
of I-PRO
transport I-PRO
is O
uch O
smaller O
than O
the O
activation B-PRO
enthalpy I-PRO
for I-PRO
li+ I-PRO
- I-PRO
conduction I-PRO
, O
indicating O
a O
high O
ionic B-PRO
polaron I-PRO
binding I-PRO
energy I-PRO
. O


thermogravimetric B-CMT
analysis I-CMT
indicates O
that O
LixCoO2 B-MAT
with I-MAT
x I-MAT
< I-MAT
<nUm> I-MAT
decomposes O
to O
CoLiO2 B-MAT
and O
Co2O3 B-MAT
at O
temperatures O
higher O
than O
<nUm> O
° O
C O
. O


this O
is O
sustained O
by O
the O
data O
for O
the O
electronic B-PRO
seebeck I-PRO
coefficient I-PRO
. O


also O
the O
thermodynamic B-PRO
, O
thermoelectric B-PRO
and O
kinetic B-PRO
data O
of O
LixTi1.03S2 B-PRO
are O
critically O
compared O
with O
those O
of O
AgxTiS2 B-MAT
. O


effects O
of O
homogenization B-SMT
on O
microstructures B-PRO
and O
properties O
of O
a O
new O
type O
Al B-MAT
– I-MAT
Mg I-MAT
– I-MAT
Mn I-MAT
– I-MAT
Zr I-MAT
– I-MAT
Ti I-MAT
– I-MAT
Er I-MAT
alloy B-DSC


microstructural B-PRO
evolutions I-PRO
and O
mechanical B-PRO
properties I-PRO
of O
Al B-MAT
– I-MAT
Mg I-MAT
– I-MAT
Mn I-MAT
– I-MAT
Zr I-MAT
– I-MAT
Ti I-MAT
– I-MAT
Er I-MAT
alloy B-DSC
after O
homogenization B-SMT
were O
investigated O
in O
detail O
by O
optical B-CMT
microscope I-CMT
( O
OM B-CMT
) O
, O
scanning B-CMT
electronic I-CMT
microscope I-CMT
( O
SEM B-CMT
) O
, O
transmission B-CMT
electronic I-CMT
microscope I-CMT
( O
TEM B-CMT
) O
, O
energy B-CMT
dispersive I-CMT
spectrum I-CMT
( O
EDS B-CMT
) O
and O
tensile B-CMT
test I-CMT
. O


A O
maximum O
tensile B-PRO
strength I-PRO
is O
obtained O
when O
the O
alloy B-DSC
homogenized B-SMT
at O
<nUm> O
° O
C O
for O
16h O
. O


with O
increasing O
preheating B-SMT
temperature O
( O
<nUm> O
– O
<nUm> O
° O
C O
) O
, O
the O
strength B-PRO
of O
the O
alloy B-DSC
finial O
homogenized B-SMT
at O
<nUm> O
° O
C O
for O
16h O
increases O
. O


when O
the O
preheating B-SMT
temperature O
is O
≥ O
<nUm> O
° O
C O
, O
the O
strengths B-PRO
of O
the O
two O
- O
step O
homogenized B-SMT
alloys B-DSC
are O
higher O
than O
those O
of O
the O
single O
homogenized B-SMT
alloys B-DSC
. O


the O
preheating B-SMT
stage O
plays O
an O
important O
role O
in O
the O
microstructures B-PRO
and O
properties O
of O
the O
final O
homogenized B-SMT
alloy B-DSC
. O


many O
fine O
(Mn,Fe)Al6 B-MAT
precipitates B-DSC
when O
the O
preheating B-SMT
temperature O
is O
<nUm> O
° O
C O
. O


Al3Er B-MAT
phase O
can O
not O
be O
observed O
during O
preheating B-SMT
stage O
. O


plenty O
of O
fine O
(Mn,Fe)Al6 B-MAT
and O
Al3Er B-MAT
precipitate O
in O
finial O
homogenized B-SMT
alloy B-DSC
when O
the O
preheating B-SMT
temperature O
is O
≥ O
<nUm> O
° O
C O
. O


the O
Al B-MAT
– I-MAT
Mg I-MAT
– I-MAT
Mn I-MAT
– I-MAT
Zr I-MAT
– I-MAT
Ti I-MAT
– I-MAT
Er I-MAT
alloy B-DSC
is O
effectively O
strengthened O
by O
substructure B-PRO
and O
dispersoids B-PRO
of O
(Mn,Fe)Al6 B-MAT
and O
Al3Er B-MAT
. O


magnetic B-PRO
and O
electrical B-PRO
resistance I-PRO
behaviour I-PRO
of O
the O
oxides B-MAT
, O
ca3-x B-MAT
Y I-MAT
x I-MAT
LiO6Ru I-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
and I-MAT
<nUm> I-MAT
) I-MAT


we O
have O
investigated O
the O
magnetic B-PRO
and O
electrical B-PRO
resistance I-PRO
behaviour I-PRO
of O
Ca3-xYxLiRuO6 B-MAT
. O


the O
parent O
compound O
exhibits O
magnetic B-PRO
ordering I-PRO
of O
the O
ruthenium B-MAT
sublattice O
at O
a O
rather O
high O
temperature O
, O
113K O
. O


though O
the O
paramagnetic B-PRO
curie I-PRO
temperature I-PRO
( O
thp B-PRO
) O
is O
negative O
and O
indicates O
antiferromagnetic B-PRO
ordering I-PRO
, O
the O
large O
magnitude O
( O
-250 O
K O
) O
of O
thp B-PRO
reveals O
a O
complex O
nature O
of O
the O
magnetism B-PRO
in O
this O
compound O
. O


Ru B-MAT
ions O
appear O
to O
be O
in O
the O
pentavalent O
state O
. O


we O
note O
that O
the O
neel B-PRO
temperature I-PRO
undergoes O
only O
a O
marginal O
reduction O
by O
Y B-MAT
substitution O
. O


all O
these O
compositions B-PRO
are O
found O
to O
be O
insulators B-PRO
and O
thus O
the O
electron B-SMT
doping I-SMT
does O
not O
result O
in O
metallicity B-PRO
. O


thus O
the O
overall O
magnetic B-PRO
and O
transport B-PRO
behaviour I-PRO
are O
found O
to O
be O
essentially O
insensitive O
to O
Y B-MAT
substitution O
for O
Ca B-MAT
, O
a O
finding O
which O
may O
favour O
the O
idea O
of O
quasi-one B-PRO
- I-PRO
dimensional I-PRO
magnetism I-PRO
in O
these O
compounds O
. O


growth O
and O
dielectric B-CMT
characterization I-CMT
of O
yttrium B-MAT
oxide I-MAT
thin B-DSC
films I-DSC
deposited O
on O
Si B-MAT
by O
r.f. B-SMT
- I-SMT
magnetron I-SMT
sputtering I-SMT


thin B-DSC
films I-DSC
of O
O3Y2 B-MAT
have O
been O
deposited O
by O
r.f. B-SMT
- I-SMT
magnetron I-SMT
sputtering I-SMT
onto O
<nUm> O
mm O
diameter O
n B-PRO
- I-PRO
type I-PRO
single B-DSC
crystal I-DSC
Si B-MAT
wafers B-DSC
. O


the O
growth O
conditions O
are O
discussed O
including O
an O
optical B-CMT
interferometric I-CMT
technique I-CMT
for O
in-situ O
thickness O
monitoring O
. O


the O
dielectric B-PRO
properties I-PRO
of O
films B-DSC
deposited O
at O
<nUm> O
° O
C O
, O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
are O
measured O
, O
with O
optimum O
values O
of O
the O
relative O
dielectric B-PRO
constant I-PRO
and O
breakdown B-PRO
strength I-PRO
determined O
as O
[?]r B-PRO
= O
<nUm> O
and O
ebd B-PRO
= O
<nUm> O
MVcm-1 O
respectively O
. O


deposition O
was O
uniform O
with O
respect O
to O
film B-DSC
thickness O
over O
<nUm> O
cm2 O
( O
± O
<nUm> O
% O
) O
, O
and O
the O
refractive B-PRO
index I-PRO
of O
the O
O3Y2 B-MAT
was O
determined O
as O
n B-PRO
= O
<nUm> O


fabrication O
and O
characterization O
of O
uniform O
Fe3O4 B-MAT
octahedral O
micro-crystals B-DSC


uniform O
Fe3O4 B-MAT
octahedral O
microcrystals B-DSC
with O
perfect O
appearance O
have O
been O
successfully O
synthesized O
by O
a O
triton B-SMT
X100 I-SMT
- I-SMT
assisted I-SMT
polyol I-SMT
process I-SMT
. O


during O
the O
polyols B-SMT
process I-SMT
for O
the O
preparation O
of O
Fe3O4 B-MAT
octahedra O
, O
the O
introduction O
of O
triton O
X100 O
decreases O
significantly O
the O
needed O
concentration O
of O
HNaO O
. O


the O
results O
show O
that O
Fe3O4 B-MAT
octahedra O
are O
composed O
of O
eight O
triangular O
sheets B-DSC
, O
which O
are O
equilateral O
triangles O
. O


the O
edge O
size O
of O
Fe3O4 B-MAT
octahedron O
is O
about O
<nUm> O
mm O
. O


the O
magnetic B-PRO
properties I-PRO
of O
Fe3O4 B-MAT
octahedral O
particles B-DSC
were O
evaluated O
on O
a O
SQUID B-CMT
magnetometer I-CMT
at O
room O
temperature O
. O


the O
value O
of O
saturation B-PRO
magnetization I-PRO
for O
Fe3O4 B-MAT
octahedra O
is O
<nUm> O
emu O
/ O
g O
, O
which O
is O
close O
to O
the O
value O
of O
bulk B-DSC
magnetite B-MAT
. O


the O
remnant B-PRO
magnetization I-PRO
and O
coercive B-PRO
force I-PRO
of O
Fe3O4 B-MAT
octahedra O
are O
considerably O
low O
, O
which O
are O
rare O
for O
the O
Fe3O4 B-MAT
particles B-DSC
with O
the O
size O
scale O
of O
micrometers O
. O


the O
Fe3O4 B-MAT
octahedral O
microcrystals B-DSC
show O
high O
saturation B-PRO
magnetizations I-PRO
and O
very O
low O
coercivities B-PRO
. O


morphological O
control O
in O
synthesis O
of O
cobalt B-MAT
basic I-MAT
carbonate I-MAT
nanorods B-DSC
assembly O


cobalt B-MAT
basic I-MAT
carbonates I-MAT
( O
CBC B-MAT
) O
with O
different O
morphologies B-PRO
have O
been O
synthesized O
by O
using O
urea O
as O
a O
hydrolysis-controlling O
agent O
. O


A O
variety O
of O
means O
, O
such O
as O
XRD B-CMT
, O
FT-IR B-CMT
, O
TG B-CMT
, O
SEM B-CMT
and O
TEM B-CMT
, O
were O
performed O
to O
characterize O
the O
as-synthesized B-DSC
samples O
. O


As O
evidenced O
by O
XRD B-CMT
, O
the O
samples O
are O
CCo2H2O5 B-MAT
with O
orthorhombic B-SPL
crystal O
phase O
( O
space O
group O
P2212 B-SPL
) O
, O
which O
is O
further O
supported O
by O
FT-IR B-CMT
and O
TG B-CMT
analysis O
. O


SEM B-CMT
and O
TEM B-CMT
observations O
show O
that O
the O
sample O
of O
nanorods B-DSC
aggregate O
possesses O
bundle O
shape O
without O
using O
sodium O
dodecyl O
sulfate O
( O
SDS O
) O
as O
structure O
- O
directing O
agent O
, O
while O
the O
sample O
has O
pinecone B-DSC
- O
like O
shape O
at O
the O
presence O
of O
SDS O
. O


it O
is O
expected O
that O
SDS O
coordinated O
to O
CBC B-MAT
nanocrystals B-DSC
may O
retard O
the O
growth O
of O
small O
nanoparticles B-DSC
into O
bigger O
ones O
, O
and O
that O
SDS O
may O
be O
adsorbed O
on O
the O
side O
face O
of O
nanorods B-DSC
and O
also O
retards O
the O
aggregation O
of O
nanorods B-DSC
into O
bundles O
, O
finally O
forming O
the O
pinecone B-DSC
- O
like O
shape O
of O
nanorods B-DSC
aggregate O
. O


thermoelectric B-PRO
properties I-PRO
of O
p B-PRO
- I-PRO
type I-PRO
<nUm> B-MAT
% I-MAT
Bi2Te3+75 I-MAT
% I-MAT
Sb2Te3 I-MAT
alloys B-DSC
manufactured O
by O
rapid B-SMT
solidification I-SMT
and O
hot B-SMT
pressing I-SMT


p B-PRO
- I-PRO
type I-PRO
Bi2Te3 B-MAT
– I-MAT
Sb2Te3 I-MAT
solid B-DSC
solutions I-DSC
were O
newly O
fabricated O
by O
rapid B-SMT
solidification I-SMT
and O
hot B-SMT
pressing I-SMT
, O
which O
is O
considered O
to O
be O
a O
mass O
production O
technique O
for O
this O
alloy B-DSC
. O


structural B-PRO
homogeneity I-PRO
of O
the O
melt B-SMT
spun I-SMT
ribbon B-DSC
and O
plastic B-SMT
deformation I-SMT
of O
the O
hot O
consolidated O
body O
were O
systematically O
investigated O
and O
compared O
with O
conventionally O
fabricated O
alloys B-DSC
. O


initial O
composition B-PRO
and O
hot B-SMT
pressing I-SMT
temperature O
dependences O
of O
the O
rapidly B-SMT
solidified I-SMT
and O
hot B-SMT
pressed I-SMT
samples O
were O
quantitatively O
analyzed O
by O
measuring O
the O
thermoelectric B-PRO
properties I-PRO
such O
as O
seebeck B-PRO
coefficient I-PRO
, O
electrical B-PRO
conduction I-PRO
, O
thermal B-PRO
conductivity I-PRO
and O
hall B-PRO
coefficient I-PRO
. O


tensile B-PRO
and O
elastic B-PRO
properties I-PRO
of O
deformed O
heterogeneous B-DSC
aluminum B-MAT
alloys B-DSC
at O
room O
and O
elevated O
temperatures O


In O
this O
study O
we O
investigated O
the O
tensile B-PRO
and O
elastic B-PRO
properties I-PRO
of O
deformed O
binary O
AlNi B-MAT
, O
AlFe B-MAT
, O
and O
AlCu B-MAT
alloys B-DSC
containing O
<nUm> O
– O
<nUm> O
vol. O
% O
of O
second O
phase O
. O


sheets B-DSC
and O
rods B-DSC
of O
the O
alloys B-DSC
exhibit O
an O
increase O
in O
young B-PRO
's I-PRO
modulus I-PRO
of O
<nUm> O
% O
– O
<nUm> O
% O
, O
and O
tensile B-PRO
properties I-PRO
at O
room O
and O
elevated O
temperatures O
comparable O
with O
those O
of O
conventional O
medium O
- O
strength B-PRO
wrought O
aluminum B-MAT
alloys B-DSC
. O


the O
elastic B-PRO
moduli I-PRO
of O
the O
phases O
were O
estimated O
. O


raman B-CMT
spectrum O
of O
Ba-Y-Cu-O B-MAT
system O


the O
raman B-CMT
spectra O
of O
a O
set O
of O
samples O
with O
nominal O
composition B-PRO
BaxY1-xCuO3(0.005 B-MAT
⩽ I-MAT
x I-MAT
⩽ I-MAT
<nUm> I-MAT
) I-MAT
which O
are O
synthesized O
under O
the O
same O
condition O
have O
been O
measured O
. O


it O
is O
observed O
that O
the O
main O
characters O
of O
raman B-CMT
spectrum O
are O
quite O
different O
for O
the O
two O
groups O
of O
samples O
with O
Ba B-PRO
concentration I-PRO
being O
<nUm> O
⩽ O
x B-PRO
⩽ O
<nUm> O
and O
<nUm> O
⩽ O
x B-PRO
⩽ O
<nUm> O
respectively O
. O


it O
just O
coincides O
with O
the O
results O
two O
types O
of O
phase B-PRO
structures I-PRO
and O
the O
difference O
in O
superconductivity B-PRO
related O
to O
the O
two O
ranges O
of O
composition B-PRO
. O


based O
on O
a O
comprehensive O
analysis O
of O
the O
results O
above O
, O
the O
authors O
suggest O
that O
the O
raman B-CMT
peak O
near O
<nUm> O
cm-1 O
likely O
corresponds O
to O
the O
vibration O
of O
CuO6 B-MAT
octahedra O
breathing B-PRO
- I-PRO
mode I-PRO
, O
which O
play O
an O
important O
role O
in O
this O
system O
for O
achieving O
high O
transition B-PRO
temperature I-PRO
. O


band O
engineering O
of O
amorphous B-DSC
silicon B-MAT
ruthenium I-MAT
thin B-DSC
film I-DSC
and O
its O
near B-PRO
- I-PRO
infrared I-PRO
absorption I-PRO
enhancement O
combined O
with O
nano-holes B-DSC
pattern I-DSC
on O
back O
surface B-DSC
of O
silicon B-MAT
substrate B-DSC


silicon B-MAT
is O
widely O
used O
in O
semiconductor B-APL
industry I-APL
but O
has O
poor O
performance O
in O
near B-APL
- I-APL
infrared I-APL
photoelectronic I-APL
devices I-APL
because O
of O
its O
bandgap B-PRO
limit O
. O


In O
this O
study O
, O
a O
narrow O
bandgap B-PRO
silicon B-MAT
rich O
semiconductor B-PRO
is O
achieved O
by O
introducing O
ruthenium B-MAT
( O
Ru B-MAT
) O
into O
amorphous B-DSC
silicon B-MAT
( O
a-Si B-MAT
) O
to O
form O
amorphous B-DSC
silicon B-MAT
ruthenium I-MAT
( O
a-Si1-xRux B-MAT
) O
thin B-DSC
films I-DSC
through O
co-sputtering B-SMT
. O


the O
increase O
of O
Ru B-MAT
concentration O
leads O
to O
an O
enhancement O
of O
light B-PRO
absorption I-PRO
and O
a O
narrower O
bandgap B-PRO
. O


meanwhile O
, O
a O
specific O
light O
trapping O
technique O
is O
employed O
to O
realize O
high O
absorption B-PRO
of O
a-Si1-xRux B-MAT
thin B-DSC
film I-DSC
in O
a O
finite O
thickness O
to O
avoid O
unnecessary O
carrier O
recombination O
. O


A O
double B-APL
- I-APL
layer I-APL
absorber I-APL
comprising O
of O
a-Si1-xRux B-MAT
thin B-DSC
film I-DSC
and O
silicon B-MAT
random B-DSC
nano-holes I-DSC
layer I-DSC
is O
formed O
on O
the O
back O
surface B-DSC
of O
silicon B-MAT
substrates B-DSC
, O
and O
significantly O
improves O
near B-PRO
- I-PRO
infrared I-PRO
absorption I-PRO
while O
the O
leaky B-PRO
light I-PRO
intensity I-PRO
is O
less O
than O
<nUm> O
% O
. O


this O
novel O
absorber B-APL
, O
combining O
narrow O
bandgap B-PRO
thin B-DSC
film I-DSC
with O
light B-PRO
trapping I-PRO
structure I-PRO
, O
may O
have O
a O
potential O
application O
in O
near B-APL
- I-APL
infrared I-APL
photoelectronic I-APL
devices I-APL
. O


failure B-PRO
modes I-PRO
in O
three B-CMT
- I-CMT
point I-CMT
bending I-CMT
tests I-CMT
of O
cement B-MAT
- O
steel B-MAT
, O
cement B-MAT
- O
cement B-MAT
and O
cement B-MAT
- O
sandstone B-MAT
bi-material B-DSC
beams I-DSC


tensile B-PRO
strength I-PRO
of O
cement B-MAT
- O
steel B-MAT
and O
cement B-MAT
- O
rock B-MAT
interfaces B-DSC
is O
an O
important O
input O
parameter O
when O
predicting O
well B-PRO
integrity I-PRO
failure I-PRO
in O
petroleum B-APL
industry I-APL
as O
well O
as O
during O
underground B-APL
CO2 I-APL
storage I-APL
. O


laboratory O
tests O
of O
interface B-PRO
strength I-PRO
( O
e.g. O
the O
so O
- O
called O
pushout B-CMT
test I-CMT
) O
often O
provide O
estimates O
of O
shear O
rather O
than O
tensile B-PRO
strength I-PRO
. O


In O
this O
work O
, O
three B-CMT
- I-CMT
point I-CMT
bending I-CMT
test I-CMT
of O
bi-material B-DSC
beams I-DSC
was O
used O
to O
study O
tensile B-PRO
failure I-PRO
at O
cement B-MAT
- O
steel B-MAT
, O
cement B-MAT
- O
cement B-MAT
, O
and O
cement B-MAT
- O
sandstone B-MAT
interfaces B-DSC
. O


the O
tests O
revealed O
that O
cement B-MAT
- O
steel B-MAT
interfaces B-DSC
were O
the O
weakest O
ones O
, O
while O
cement B-MAT
- O
cement B-MAT
interfaces B-DSC
were O
the O
second O
weakest O
. O


cement B-MAT
- O
sandstone B-MAT
interfaces B-DSC
were O
apparently O
quite O
strong O
: O
both O
tested O
cement B-MAT
- O
sandstone B-MAT
beams B-DSC
broke O
inside O
the O
cement B-MAT
, O
ca. O
<nUm> O
– O
<nUm> O
cm O
off O
the O
interface B-DSC
. O


this O
surprising O
result O
, O
i.e. O
the O
interface B-DSC
being O
stronger O
than O
the O
hardened B-SMT
cement B-MAT
, O
was O
attributed O
to O
water O
suction O
from O
cement B-MAT
into O
the O
dry O
sandstone B-MAT
during O
setting O
, O
which O
was O
corroborated O
by O
the O
observed O
very O
uneven O
fracture B-PRO
surface I-PRO
. O


all O
bi-material B-DSC
beams I-DSC
had O
lower O
flexural B-PRO
strength I-PRO
than O
monolith B-DSC
cement B-MAT
beams B-DSC
. O


synthesis O
and O
characterization O
of O
the O
new O
layered B-DSC
perovskite B-SPL
, O
Na0.10(VO)0.45LaTiO4*nH2O B-MAT


Na0.10(VO)0.45LaTiO4*nH2O B-MAT
( I-MAT
n I-MAT
≅ I-MAT
<nUm> I-MAT
) I-MAT
has O
been O
synthesized O
by O
an O
ion B-SMT
exchange I-SMT
reaction I-SMT
between O
the O
single B-DSC
- I-DSC
layered I-DSC
perovskite B-SPL
, O
LaNaO4Ti B-MAT
, O
and O
aqueous O
O5SV B-MAT
. O


this O
low O
temperature O
phase O
retains O
the O
structure B-PRO
of O
the O
parent O
with O
a O
slight O
contraction O
of O
its O
tetragonal B-SPL
unit O
cell O
. O


rietveld B-CMT
refinement I-CMT
of O
x-ray B-CMT
powder I-CMT
diffraction I-CMT
data O
indicate O
that O
the O
vanadyl O
units O
are O
disordered B-PRO
within O
the O
perovskite B-SPL
layers B-DSC
. O


infrared B-CMT
spectroscopy I-CMT
, O
electron B-CMT
spin I-CMT
resonance I-CMT
and O
magnetic B-PRO
susceptibility I-PRO
are O
consistent O
with O
the O
presence O
of O
isolated O
vanadyl O
units O
. O


susceptibility B-PRO
data O
show O
curie B-PRO
– I-PRO
weiss I-PRO
behavior I-PRO
above O
140K O
. O


ablation B-PRO
behavior I-PRO
of O
rare O
earth O
La B-MAT
- O
modified B-DSC
CZr B-MAT
coating B-APL
for O
CSi B-MAT
- O
coated B-DSC
carbon B-MAT
/ O
carbon B-MAT
composites B-DSC
under O
an O
oxyacetylene O
torch O


to O
improve O
the O
ablation B-PRO
resistance I-PRO
of O
carbon B-MAT
/ O
carbon B-MAT
( O
C B-MAT
/ O
C B-MAT
) O
composites B-DSC
at O
ultra-high O
temperature O
, O
La B-MAT
- O
modified O
CZr B-MAT
coating B-APL
was O
prepared O
on O
CSi B-MAT
- O
coated B-DSC
C B-MAT
/ O
C B-MAT
composites B-DSC
by O
supersonic B-SMT
atmosphere I-SMT
plasma I-SMT
spraying I-SMT
. O


the O
coating B-APL
shows O
a O
significant O
improvement O
on O
the O
ablation B-PRO
resistance I-PRO
compared O
with O
CZr B-MAT
coating B-APL
and O
could O
protect O
C B-MAT
/ O
C B-MAT
composites B-DSC
for O
more O
than O
120s O
under O
heat O
flux O
of O
<nUm> O
MW O
/ O
m2 O
. O


La B-MAT
acted O
as O
a O
role O
in O
promoting O
the O
liquid O
phase O
sintering B-SMT
of O
O2Zr B-MAT
and O
forming O
a O
compact O
scale O
with O
high O
thermal B-PRO
stability I-PRO
, O
improving O
the O
ablation B-PRO
resistance I-PRO
of O
C B-MAT
/ O
C B-MAT
composites B-DSC
. O


synthesis O
and O
magnetic B-CMT
characterization I-CMT
of O
nanostructures B-DSC
N B-MAT
/ I-MAT
S2W I-MAT
, I-MAT
where I-MAT
N I-MAT
= I-MAT
Ni I-MAT
, I-MAT
Co I-MAT
and I-MAT
Fe I-MAT


bimetallic B-MAT
sulfides I-MAT
N I-MAT
/ I-MAT
S2W I-MAT
( I-MAT
N I-MAT
= I-MAT
Ni I-MAT
, I-MAT
Co I-MAT
and I-MAT
Fe I-MAT
) I-MAT
with O
atomic B-PRO
ratio I-PRO
N I-PRO
/ I-PRO
W+N I-PRO
= O
<nUm> O
were O
prepared O
by O
the O
impregnated B-SMT
thiosalt I-SMT
decomposition I-SMT
( I-SMT
ITD I-SMT
) I-SMT
technique I-SMT
and O
treated O
under O
reducing O
atmosphere O
at O
<nUm> O
° O
C O
. O


the O
composition B-PRO
, O
morphology B-PRO
, O
structure B-PRO
and O
magnetic B-PRO
properties I-PRO
of O
the O
samples O
were O
characterized O
by O
energy B-CMT
dispersive I-CMT
spectrometry I-CMT
( O
EDS B-CMT
) O
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
, O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
vibrating B-CMT
sample I-CMT
magnetometry I-CMT
( O
VSM B-CMT
) O
measurements O
respectively O
. O


the O
Co B-MAT
samples O
reduced O
by O
<nUm> O
h O
exhibited O
the O
highest O
coercivity B-PRO
value O
. O


improvement O
of O
thermoelectric B-PRO
performance I-PRO
in O
magnetically B-PRO
c-axis-oriented I-PRO
bismuth B-MAT
- O
based O
cobaltites B-MAT


fabrication O
of O
thermoelectric B-PRO
bi-based B-MAT
cobaltites I-MAT
with O
large O
magnetic B-PRO
anisotropy I-PRO
( O
dkh B-PRO
= O
khc B-PRO
− O
khab B-PRO
) O
and O
relatively O
low O
resistivity B-PRO
using O
a O
crystallochemical B-SMT
process I-SMT
is O
reported O
. O


doping B-SMT
of O
various O
rare O
earth O
( O
RE O
) O
ions O
into O
the O
Ca B-MAT
site O
in O
[(Bi0.5Pb0.5)2Ca2O4]yCoO2 B-MAT
[(Bi,Pb)Ca222] I-MAT
enhanced O
dkh B-PRO
comparable O
to O
that O
of O
[Ca2CoO3-d]0.62CoO2 B-MAT
. O


tailoring O
of O
the O
Sr B-MAT
- O
doping B-SMT
level O
in O
Dy B-MAT
- O
doped B-DSC
(Bi,Pb)Ca222 B-MAT
enabled O
the O
resistivity B-PRO
to O
be O
reduced O
without O
decreasing O
dkh B-PRO
. O


the O
magnetically B-PRO
c-axis-oriented I-PRO
(Sr,Dy)-doped B-MAT
(Bi,Pb)Ca222 I-MAT
bulk B-DSC
exhibited O
improved O
thermoelectric B-PRO
performance I-PRO
compared O
with O
the O
Sr B-MAT
- O
free O
RE-doped B-DSC
BiCa222 B-MAT
and O
a-axis B-PRO
grain I-PRO
- I-PRO
oriented I-PRO
[(Bi0.5Pb0.5)2Sr2O4] B-MAT
∼ I-MAT
<nUm> I-MAT
CoO2 I-MAT
. O


magneto B-CMT
- I-CMT
optical I-CMT
analysis I-CMT
of O
anisotropic O
CdSeZn B-MAT
quantum B-DSC
dots I-DSC


the O
effect O
of O
magnetic O
field O
and O
geometrical B-PRO
anisotropy I-PRO
on O
electronic B-PRO
and O
optical B-PRO
properties I-PRO
of O
self O
- O
assembled O
CdSeZn B-MAT
quantum B-DSC
dots I-DSC
is O
theoretically O
investigated O
. O


the O
luttinger B-CMT
hamiltonian I-CMT
formulation I-CMT
has O
been O
used O
in O
a O
transformed O
coordinate O
system O
for O
obtaining O
the O
energy B-PRO
eigenvalues I-PRO
and O
wavefunctions B-PRO
for O
the O
holes O
. O


the O
variation O
of O
energy B-PRO
eigenvalues I-PRO
with O
the O
magnetic O
field O
has O
been O
studied O
for O
anisotropic O
quantum B-DSC
dots I-DSC
. O


the O
degree O
of O
linear B-PRO
polarization I-PRO
is O
also O
calculated O
and O
is O
found O
to O
increase O
with O
magnetic O
field O
which O
is O
explained O
in O
terms O
of O
anisotropy O
induced O
valence O
subband O
mixing O
. O


on O
the O
electronic B-PRO
structure I-PRO
of O
Ag B-MAT
chalcogenides I-MAT


the O
electronic B-PRO
structure I-PRO
of O
Ag B-MAT
chalcogenides I-MAT
in O
the O
α B-SPL
phase O
, O
which O
exhibit O
an O
interesting O
, O
electronic B-PRO
semiconducting I-PRO
behaviour I-PRO
as O
well O
as O
the O
fast O
ion B-PRO
transport I-PRO
, O
is O
discussed O
on O
the O
basis O
of O
an O
energy B-CMT
band I-CMT
structure I-CMT
calculation I-CMT
. O


As O
a O
simplest O
way O
of O
simulating O
the O
effect O
of O
the O
Ag B-MAT
ions O
on O
the O
electronic B-PRO
states I-PRO
, O
some O
hypothetical O
crystalline B-DSC
compounds O
are O
constructed O
such O
as O
the O
perovskite B-SPL
, O
the O
sodium B-SPL
chloride I-SPL
and O
the O
flourite B-SPL
structures O
. O


the O
absolute O
magnitude O
of O
the O
calculated O
conduction B-PRO
electron I-PRO
effective I-PRO
mass I-PRO
is O
quite O
small O
irrespectively O
of O
the O
structures O
, O
about O
<nUm> O
% O
of O
the O
free B-PRO
- I-PRO
electron I-PRO
mass I-PRO
, O
in O
semiquantitative O
agreement O
with O
experiments O
. O


A O
deviation O
from O
an O
effective B-CMT
mass I-CMT
approximation I-CMT
near O
the O
conduction B-PRO
band I-PRO
bottom I-PRO
is O
found O
to O
be O
appreciable O
, O
and O
to O
explain O
reasonably O
well O
experimental O
results O
. O


an O
origin O
of O
these O
features O
of O
the O
conduction B-PRO
band I-PRO
is O
a O
rather O
strong O
hybridization O
of O
the O
Ag B-MAT
5s B-PRO
band I-PRO
and O
the O
chalcogen B-MAT
s B-PRO
band I-PRO
. O


the O
calculation O
also O
shows O
that O
the O
hybridization O
of O
the O
Ag B-MAT
4d B-PRO
band I-PRO
and O
the O
chalcogen B-MAT
p B-PRO
band I-PRO
can O
affect O
the O
absolute O
magnitude O
of O
the O
hole B-PRO
effective I-PRO
mass I-PRO
appreciably O
, O
and O
that O
the O
energy B-PRO
band I-PRO
gap I-PRO
depends O
sensitively O
on O
these O
s-s O
and O
d-p B-PRO
hybridization I-PRO
effects I-PRO
. O


photoelectrochemical B-CMT
characterization I-CMT
of O
several O
semiconducting B-PRO
compounds O
of O
palladium B-MAT
with O
sulfur B-MAT
and O
/ O
or O
phosphorus B-MAT


semiconducting B-PRO
compounds O
of O
palladium B-MAT
with O
sulfur B-MAT
and O
/ O
or O
phosphorus B-MAT
were O
prepared O
as O
crystals B-DSC
and O
their O
semiconducting B-PRO
and O
photoelectrochemical B-PRO
properties I-PRO
studied O
. O


the O
compounds O
include O
PdS B-MAT
, O
PPdS B-MAT
, O
P2Pd3S8 B-MAT
, O
and O
P2Pd B-MAT
and O
crystal B-DSC
growth O
was O
accomplished O
by O
chemical B-SMT
vapor I-SMT
transport I-SMT
with O
halogens O
and O
bridgeman B-SMT
methods I-SMT
. O


photoelectrochemical B-CMT
techniques I-CMT
were O
used O
to O
measure O
bandgap B-PRO
, O
transition B-PRO
type I-PRO
, O
doping B-PRO
level I-PRO
, O
majority B-PRO
carrier I-PRO
type I-PRO
, O
flatband B-PRO
potential I-PRO
, O
quantum B-PRO
yield I-PRO
for I-PRO
electron I-PRO
flow I-PRO
, O
and O
stability B-PRO
in O
a O
photoelectrochemical B-APL
cell I-APL
. O


the O
previously O
undetermined O
bandgap B-PRO
of O
P2Pd B-MAT
is O
reported O
( O
<nUm> O
eV O
, O
indirect O
) O
. O


synthesis O
of O
dense B-PRO
yttrium B-MAT
- O
stabilised B-DSC
hafnia B-MAT
pellets B-DSC
for O
nuclear B-APL
applications I-APL
by O
spark B-SMT
plasma I-SMT
sintering I-SMT


dense B-PRO
yttrium B-MAT
– O
stabilised B-DSC
hafnia B-MAT
pellets B-DSC
( O
91.35wt. O
% O
HfO2 B-MAT
and O
8.65wt. O
% O
O3Y2 B-MAT
) O
were O
prepared O
by O
spark B-SMT
plasma I-SMT
sintering I-SMT
consolidation O
of O
micro-beads B-DSC
synthesised O
by O
the O
“ B-SMT
external I-SMT
gelation I-SMT
” I-SMT
sol I-SMT
– I-SMT
gel I-SMT
technique I-SMT
. O


this O
technique O
allows O
a O
preparation O
of O
HfO2 B-MAT
– O
O3Y2 B-MAT
beads B-DSC
with O
homogenous O
yttria B-MAT
– O
hafnia B-MAT
solid B-DSC
solution I-DSC
. O


A O
sintering B-SMT
time O
of O
<nUm> O
min O
at O
<nUm> O
° O
C O
was O
sufficient O
to O
produce O
high O
density B-PRO
pellets B-DSC
( O
over O
<nUm> O
% O
of O
the O
theoretical B-PRO
density I-PRO
) O
with O
significant O
reproducibility O
. O


the O
pellets B-DSC
have O
been O
machined B-SMT
in I-SMT
a I-SMT
lathe I-SMT
to O
the O
correct O
dimensions O
for O
use O
as O
neutron B-APL
absorbers I-APL
in O
an O
experimental O
test O
irradiation B-SMT
in O
the O
high B-CMT
flux I-CMT
reactor I-CMT
( O
HFR B-CMT
) O
in O
petten O
, O
holland O
, O
in O
order O
to O
investigate O
the O
safety O
of O
americium B-MAT
based O
nuclear B-APL
fuels I-APL
. O


chemical B-SMT
beam I-SMT
epitaxy I-SMT
of O
GaN B-MAT
on O
( O
<nUm> O
) O
sapphire B-MAT
substrate B-DSC


gallium B-MAT
nitride I-MAT
films B-DSC
were O
grown O
on O
( O
<nUm> O
) O
sapphire B-MAT
substrates B-DSC
by O
chemical B-SMT
beam I-SMT
epitaxy I-SMT
( O
CBE B-SMT
) O
using O
triethylgallium O
( O
TEGa O
) O
and O
ammonia O
( O
H3N O
) O
precursors O
. O


prior O
to O
the O
GaN B-MAT
epilayer B-DSC
growth O
at O
<nUm> O
° O
C O
, O
a O
thin O
GaN B-MAT
buffer B-DSC
layer I-DSC
was O
deposited O
at O
<nUm> O
° O
C O
. O


structural B-PRO
and O
optical B-PRO
properties I-PRO
of O
the O
epilayers B-DSC
were O
investigated O
as O
a O
function O
of O
the O
anneal B-SMT
treatment O
of O
the O
buffer B-DSC
layer I-DSC
. O


annealing B-SMT
of O
the O
buffer B-DSC
in O
H3N O
up O
to O
<nUm> O
° O
C O
increases O
the O
roughness B-PRO
of O
the O
surface B-DSC
, O
resulting O
in O
a O
epilayer B-DSC
with O
higher O
crystallinity B-PRO
. O


heating B-SMT
the O
buffer O
to O
<nUm> O
° O
C O
results O
in O
partial O
desorption O
of O
the O
film B-DSC
leaving O
small O
grains O
on O
an O
exposed O
substrate B-DSC
. O


while O
the O
epitaxy O
on O
this O
thin B-DSC
buffer I-DSC
is O
two O
- O
dimensional O
the O
resulting O
surface B-DSC
consists O
of O
a O
hexagonal B-SPL
tile O
- O
structure O
. O


the O
level O
of O
unintentional O
carbon B-MAT
doping O
is O
high O
in O
all O
films B-DSC
, O
although O
the O
growth O
conditions O
need O
further O
optimization O
. O


CBE B-CMT
may O
become O
a O
promising O
candidate O
for O
the O
growth O
of O
nitride B-MAT
films B-DSC
only O
if O
the O
carbon B-MAT
incorporation O
is O
not O
an O
inherent O
problem O
of O
the O
technique O
. O


gold B-MAT
catalysts B-APL
for O
pure B-APL
hydrogen I-APL
production I-APL
in O
the O
water B-APL
– I-APL
gas I-APL
shift I-APL
reaction I-APL
: O
activity B-PRO
, O
structure B-PRO
and O
reaction B-PRO
mechanism I-PRO


the O
production O
of O
hydrogen O
containing O
very O
low O
levels O
of O
carbon O
monoxide O
for O
use O
in O
polymer B-APL
electrolyte I-APL
fuel I-APL
cells I-APL
requires O
the O
development O
of O
catalysts B-APL
that O
show O
very O
high O
activity B-PRO
at O
low O
temperatures O
where O
the O
equilibrium O
for O
the O
removal O
of O
carbon O
monoxide O
using O
the O
water B-APL
– I-APL
gas I-APL
shift I-APL
reaction I-APL
is O
favourable O
. O


it O
has O
been O
claimed O
that O
oxide B-MAT
- O
supported O
gold B-MAT
catalysts B-APL
have O
the O
required O
high O
activity B-PRO
but O
there O
is O
considerable O
uncertainty O
in O
the O
literature O
about O
the O
feasibility O
of O
using O
these O
catalysts B-APL
under O
real O
conditions O
. O


by O
comparing O
the O
activity B-PRO
of O
gold B-MAT
catalysts B-APL
with O
that O
of O
platinum B-MAT
catalysts B-APL
it O
is O
shown O
that O
well O
- O
prepared O
gold B-MAT
catalysts B-APL
are O
significantly O
more O
active O
than O
the O
corresponding O
platinum B-MAT
catalysts B-APL
. O


however O
, O
the O
method O
of O
preparation O
and O
pre-treatment O
of O
the O
gold B-MAT
catalysts B-APL
is O
critical O
and O
activity B-PRO
variations O
of O
several O
orders O
of O
magnitude O
can O
be O
observed O
depending O
on O
the O
methods O
chosen O
. O


it O
is O
shown O
that O
an O
intimate O
contact B-APL
between O
gold B-MAT
and O
the O
oxide B-MAT
support O
is O
important O
and O
any O
preparative O
procedure O
that O
does O
not O
generate O
such O
an O
interaction O
, O
or O
any O
subsequent O
treatment O
that O
can O
destroy O
such O
an O
interaction O
, O
may O
result O
in O
catalysts B-APL
with O
low O
activity B-PRO
. O


the O
oxidation B-PRO
state I-PRO
and O
structure B-PRO
of O
active O
gold B-MAT
catalysts B-APL
for O
the O
water B-APL
– I-APL
gas I-APL
shift I-APL
reaction I-APL
is O
shown O
to O
comprise O
gold B-MAT
primarily O
in O
a O
zerovalent B-PRO
metallic I-PRO
state I-PRO
but O
in O
intimate O
contact B-APL
with O
the O
support O
. O


this O
close O
contact O
between O
small O
metallic B-PRO
gold B-MAT
particles B-DSC
and O
the O
support O
may O
result O
in O
the O
“ O
atoms O
” O
at O
the O
point O
of O
contact O
having O
a O
net O
charge O
( O
most O
probably O
cationic O
) O
but O
the O
high O
activity B-PRO
is O
associated O
with O
the O
presence O
of O
metallic B-PRO
gold B-MAT
. O


both O
in O
situ O
XPS B-CMT
and O
XANES B-CMT
appear O
unequivocal O
on O
this O
point O
and O
this O
conclusion O
is O
consistent O
with O
similar O
measurements O
on O
gold B-MAT
catalysts B-APL
even O
when O
used O
for O
CO B-APL
oxidation I-APL
. O


In O
situ O
EXAFS B-CMT
measurements O
under O
water O
gas O
shift O
conditions O
show O
that O
the O
active O
form O
of O
gold B-MAT
is O
a O
small O
gold B-MAT
cluster B-DSC
in O
intimate O
contact O
with O
the O
oxide B-MAT
support O
. O


the O
importance O
of O
the O
gold B-MAT
/ O
oxide B-MAT
interface B-DSC
is O
indicated O
but O
the O
possible O
role O
of O
special O
sites O
( O
e.g. O
, O
edge O
sites O
) O
on O
the O
gold B-MAT
clusters B-DSC
can O
not O
be O
excluded O
. O


these O
may O
be O
important O
for O
CO B-APL
oxidation I-APL
but O
the O
fact O
that O
water O
has O
to O
be O
activated O
in O
the O
water B-APL
gas I-APL
shift I-APL
reaction I-APL
may O
point O
towards O
a O
more O
dominant O
role O
for O
the O
interfacial O
sites O
. O


the O
mechanism O
of O
the O
water B-APL
gas I-APL
shift I-APL
reaction I-APL
on O
gold B-MAT
and O
other O
low O
temperature O
catalysts B-APL
has O
been O
widely O
investigated O
but O
little O
agreement O
exists O
. O


however O
, O
it O
is O
shown O
that O
a O
single O
“ O
universal O
” O
model O
is O
consistent O
with O
much O
of O
the O
experimental O
literature O
. O


In O
this O
, O
it O
is O
proposed O
that O
the O
dominant O
surface O
intermediate O
is O
a O
function O
of O
reaction O
conditions O
. O


for O
example O
, O
as O
the O
temperature O
is O
increased O
the O
dominant O
species O
changes O
from O
a O
carbonate O
or O
carboxylate O
species O
, O
to O
a O
formate O
species O
and O
eventually O
at O
high O
temperatures O
to O
a O
mechanism O
that O
is O
characteristic O
of O
a O
redox O
process O
. O


similar O
changes O
in O
the O
dominant O
intermediate O
are O
observed O
with O
changes O
in O
the O
gas O
composition O
. O


overall O
, O
it O
is O
shown O
that O
reported O
variations O
in O
the O
kinetics B-PRO
, O
structure B-PRO
and O
reaction B-PRO
mechanism I-PRO
for O
the O
water B-APL
gas I-APL
shift I-APL
reaction I-APL
on O
gold B-MAT
catalysts B-APL
can O
now O
be O
understood O
and O
rationalised O
. O


silver B-MAT
nanoparticle B-DSC
deposited O
layered B-DSC
double I-DSC
hydroxide B-MAT
nanosheets B-DSC
as O
a O
novel O
and O
high O
- O
performing O
anode B-APL
material O
for O
enhanced O
Ni B-MAT
– I-MAT
Zn I-MAT
secondary B-APL
batteries I-APL


simple O
and O
facile O
processes O
to O
produce O
silver B-MAT
nanoparticle B-DSC
deposited O
layered B-DSC
double I-DSC
hydroxide B-MAT
( O
Ag B-MAT
- O
LDH B-MAT
) O
nanosheets B-DSC
are O
reported O
. O


by O
a O
wet B-SMT
chemical I-SMT
reduction I-SMT
method I-SMT
in O
an O
aqueous O
AgNO3 O
solution O
, O
silver B-MAT
ions O
can O
be O
readily O
reduced O
to O
metallic B-PRO
silver B-MAT
nanoparticles B-DSC
and O
incorporated O
evenly O
on O
the O
surface B-DSC
of O
2D B-DSC
LDH B-MAT
nanosheets B-DSC
. O


structure B-PRO
and O
morphology B-PRO
analysis O
of O
the O
Ag B-MAT
- O
LDH B-MAT
composites B-DSC
is O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
. O


the O
Ag B-MAT
- O
LDH B-MAT
composites B-DSC
are O
characterized O
electrochemically O
proving O
their O
exceptional O
cyclability B-PRO
and O
high O
discharge B-PRO
capacity I-PRO
. O


electrochemical B-CMT
impedance I-CMT
spectroscopy I-CMT
( O
EIS B-CMT
) O
and O
four B-CMT
- I-CMT
point I-CMT
probe I-CMT
conductivity I-CMT
measurements I-CMT
show O
that O
silver B-MAT
modification O
decreases O
the O
charge B-PRO
transfer I-PRO
resistance I-PRO
of O
the O
anode B-APL
, O
and O
improves O
the O
conductivity B-PRO
of O
the O
active O
material O
, O
which O
boosts O
the O
electrochemical B-PRO
performance I-PRO
of O
Ag B-MAT
- O
LDH B-MAT
composites B-DSC
. O


these O
newly O
designed O
Ag B-MAT
- O
LDH B-MAT
nanosheets B-DSC
may O
offer O
a O
promising O
anode B-APL
candidate O
for O
high O
- O
performance O
Ni B-APL
– I-APL
Zn I-APL
secondary I-APL
batteries I-APL
and O
other O
zinc B-APL
battery I-APL
applications I-APL
. O


reaction B-SMT
synthesis I-SMT
of O
B2Ti B-MAT
– O
CTi B-MAT
composites B-DSC
with O
enhanced O
toughness B-PRO


In O
situ O
toughened O
B2Ti B-MAT
– O
TiCx B-MAT
composites B-DSC
were O
fabricated O
using O
reaction B-SMT
synthesis I-SMT
of O
B4C B-MAT
and O
Ti B-MAT
powders B-DSC
at O
high O
temperatures O
. O


the O
resulting O
materials O
possessed O
very O
high O
relative B-PRO
densities I-PRO
and O
well O
developed O
B2Ti B-MAT
plate B-PRO
- I-PRO
like I-PRO
grains I-PRO
, O
leading O
to O
a O
rather O
high O
fracture B-PRO
toughness I-PRO
, O
up O
to O
<nUm> O
MPa[?]m1 O
/ O
<nUm> O
. O


the O
microstructure B-PRO
was O
examined O
by O
means O
of O
XRD B-CMT
, O
SEM B-CMT
, O
TEM B-CMT
and O
EDAX B-CMT
. O


the O
reaction O
products O
mainly O
consisted O
of O
B2Ti B-MAT
and O
TiCx B-MAT
. O


No O
other O
phases O
, O
e.g. O
B4Ti3 B-MAT
, O
BTi B-MAT
, O
B5Ti2 B-MAT
and O
free O
Ti B-MAT
, O
were O
observed O
regardless O
of O
whether O
the O
starting O
composition B-PRO
was O
Ti B-MAT
: I-MAT
B4C I-MAT
= O
<nUm> O
: O
<nUm> O
or O
<nUm> O
: O
<nUm> O
, O
and O
whether O
the O
sintering B-SMT
temperature O
was O
<nUm> O
or O
<nUm> O
° O
C O
. O


the O
microstructural B-PRO
morphology I-PRO
is O
characterised O
by O
B2Ti B-MAT
plate B-PRO
- I-PRO
like I-PRO
grains I-PRO
distributed O
uniformly O
in O
the O
TiCx B-MAT
matrix B-DSC
. O


some O
inclusions B-PRO
and O
defects B-PRO
were O
found O
in O
B2Ti B-MAT
grains B-PRO
. O


the O
very O
high O
reaction O
temperature O
was O
believed O
to O
be O
responsible O
for O
the O
formation O
of O
plate B-PRO
- I-PRO
like I-PRO
grains I-PRO
, O
which O
, O
in O
turn O
, O
is O
responsible O
for O
the O
much O
improved O
mechanical B-PRO
properties I-PRO
. O


the O
main O
toughening B-PRO
mechanisms I-PRO
were O
likely O
to O
be O
crack B-PRO
deflection I-PRO
, O
platelet B-PRO
pull I-PRO
- I-PRO
out I-PRO
and O
the O
micro-fracture O
of O
B2Ti B-MAT
grains O
. O


microstructure B-PRO
and O
oxidation B-PRO
behavior I-PRO
of O
conventional O
and O
pseudo O
graded O
AlCrNiY B-MAT
/ O
YSZ B-MAT
thermal B-APL
barrier I-APL
coatings I-APL
produced O
by O
supersonic B-SMT
air I-SMT
plasma I-SMT
spraying I-SMT
process I-SMT


In O
this O
paper O
, O
the O
microstructure B-PRO
and O
oxidation B-PRO
behavior I-PRO
of O
conventional O
and O
pseudo O
graded O
AlCrNiY B-MAT
/ O
yttria B-MAT
- O
stabilized B-DSC
zirconia B-MAT
( O
YSZ B-MAT
) O
thermal B-APL
barrier I-APL
coatings I-APL
( O
TBCs B-APL
) O
is O
reported O
. O


both O
conventional O
and O
graded O
TBCs B-APL
were O
produced O
by O
supersonic B-SMT
air I-SMT
plasma I-SMT
spraying I-SMT
process O
. O


In O
the O
pseudo O
graded O
TBCs B-APL
, O
no O
interface B-DSC
between O
bond O
- O
coat O
, O
graded O
region O
and O
top O
- O
coat O
was O
observed O
. O


the O
ceramic B-DSC
( O
YSZ B-MAT
) O
top B-DSC
- I-DSC
coat I-DSC
in O
both O
conventional O
and O
graded O
TBCs B-APL
was O
found O
to O
exhibit O
a O
single O
phase O
tetragonal-prime B-SPL
structure O
. O


isothermal B-SMT
oxidation I-SMT
results O
confirmed O
the O
formation O
of O
thermally B-SMT
grown I-SMT
oxides B-MAT
( O
TGO B-MAT
) O
layer B-DSC
in O
both O
conventional O
and O
graded O
TBCs B-APL
. O


In O
graded O
TBCs B-APL
, O
the O
dispersed O
metallic B-PRO
phase O
was O
also O
found O
to O
be O
oxidized B-SMT
in O
the O
graded O
region O
. O


for O
oxidation B-SMT
time O
≥ O
50h O
, O
the O
TGO B-MAT
thickness O
in O
the O
conventional O
TBCs B-APL
was O
found O
to O
be O
lower O
than O
that O
of O
the O
graded O
TBCs B-APL
. O


further O
, O
in O
graded O
TBCs B-APL
, O
the O
vertical O
and O
parallel O
cracks O
were O
formed O
in O
the O
YSZ B-MAT
coating B-APL
during O
oxidation B-SMT
for O
5h O
. O


the O
cracks O
were O
enlarged O
during O
oxidation B-SMT
at O
<nUm> O
° O
C O
for O
200h O
. O


after O
oxidation B-SMT
( O
at O
<nUm> O
° O
C O
for O
200h O
) O
, O
the O
parallel O
cracks O
in O
the O
graded O
TBC B-APL
penetrated O
into O
the O
graded O
/ O
layered B-DSC
region O
. O


the O
evolution O
of O
cracks O
in O
the O
graded O
TBCs B-APL
led O
to O
a O
constant O
residual B-PRO
stress I-PRO
( O
<nUm> O
± O
<nUm> O
GPa O
) O
in O
the O
TGO B-MAT
. O


however O
, O
owing O
to O
the O
presence O
of O
few O
cracks O
in O
the O
conventional O
TBCs B-APL
, O
the O
residual O
stress O
in O
the O
TGO B-MAT
increased O
with O
oxidation B-SMT
time O
. O


after O
oxidation B-SMT
at O
<nUm> O
° O
C O
for O
200h O
, O
the O
conventional O
TBCs B-APL
have O
higher O
residual B-PRO
stress I-PRO
( O
<nUm> O
± O
<nUm> O
GPa O
) O
in O
the O
TGO B-MAT
as O
compared O
to O
the O
graded O
TBCs B-APL
. O


nano-quantum B-PRO
size I-PRO
effect I-PRO
in O
sol B-SMT
– I-SMT
gel I-SMT
derived O
mesoporous B-DSC
titania B-MAT
layers B-DSC
deposited O
on O
soda B-MAT
- I-MAT
lime I-MAT
glass I-MAT
substrate B-DSC


the O
O2Ti B-MAT
nanolayers B-DSC
were O
fabricated O
on O
soda B-MAT
- I-MAT
lime I-MAT
glass I-MAT
substrates B-DSC
with O
the O
application O
of O
sol B-SMT
– I-SMT
gel I-SMT
method O
and O
dip B-SMT
- I-SMT
coating I-SMT
technique O
. O


In O
the O
fabricated O
O2Ti B-MAT
layers B-DSC
, O
the O
quantum B-PRO
size I-PRO
effect I-PRO
can O
be O
observed O
. O


for O
the O
sake O
of O
comparison O
, O
we O
investigated O
also O
the O
O2Ti B-MAT
nanolayers B-DSC
fabricated O
on O
soda B-MAT
- I-MAT
lime I-MAT
glass I-MAT
substrates B-DSC
with O
a O
buffer B-DSC
silica B-MAT
layer B-DSC
. O


the O
fabricated O
layers B-DSC
were O
investigated O
with O
the O
application O
of O
optical B-CMT
measurement I-CMT
techniques O
and O
atomic B-CMT
force I-CMT
microscopy I-CMT
. O


the O
widths O
of O
energy B-PRO
gap I-PRO
and O
urbach B-PRO
energy I-PRO
were O
determined O
. O


the O
diffusion O
of O
sodium B-MAT
ions O
na+ O
from O
the O
glass B-MAT
substrate B-DSC
to O
the O
O2Ti B-MAT
layer B-DSC
brings O
about O
the O
non-monotonic O
dependence O
of O
the O
energy B-PRO
band I-PRO
gap I-PRO
on O
the O
thickness O
of O
O2Ti B-MAT
layer B-DSC
. O


In O
the O
O2Ti B-MAT
layers B-DSC
fabricated O
on O
soda B-MAT
- I-MAT
lime I-MAT
glass I-MAT
substrates B-DSC
pre-coated B-SMT
with O
a O
O2Si B-MAT
layer B-DSC
, O
the O
influence O
of O
silicon B-MAT
ions O
on O
the O
direct B-PRO
energy I-PRO
band I-PRO
gap I-PRO
was O
found O
. O


preparation O
and O
characterization O
of O
silver B-MAT
nanoparticles B-DSC
within O
silicate B-MAT
glass B-DSC
ceramics I-DSC
via O
modification O
of O
ion B-SMT
exchange I-SMT
process I-SMT


this O
work O
pointed O
out O
the O
preparation O
of O
glass B-DSC
- I-DSC
ceramic I-DSC
based O
on O
fluoramphibole B-MAT
using O
different O
alkalis O
. O


phases O
were O
crystallized O
using O
heat B-SMT
- I-SMT
treatment I-SMT
at O
<nUm> O
° O
C O
/ O
2.5h O
and O
were O
identified O
using O
XRD B-CMT
. O


fluorophlogopite B-MAT
, O
fluorrichterite B-MAT
, O
enstatite B-MAT
and O
cristobalite B-MAT
were O
found O
in O
the O
heat B-SMT
- I-SMT
treated I-SMT
glasses B-DSC
. O


crystallization O
of O
fluorophlogopite B-MAT
or O
fluorrichterite B-MAT
was O
detected O
in O
samples O
containing O
high O
K B-MAT
and O
Na B-MAT
, O
respectively O
, O
accompanied O
with O
crystallization O
of O
enstatite B-MAT
in O
the O
last O
sample O
. O


cristobalite B-MAT
was O
crystallized O
only O
in O
equal O
alkali O
- O
containing O
glass B-DSC
beside O
enstatite B-MAT
and O
richterite B-MAT
. O


nanoparticles B-DSC
of O
silver B-MAT
have O
grown O
within O
a O
silicate B-MAT
glass B-DSC
via O
modification O
of O
ion B-SMT
exchange I-SMT
process I-SMT
. O


the O
metal B-PRO
particle B-DSC
diameters O
were O
detected O
using O
XRD B-CMT
and O
TEM B-CMT
. O


the O
particles B-DSC
size O
ranges O
from O
<nUm> O
to O
<nUm> O
nm O
. O


the O
amount O
of O
silver B-MAT
ions O
exchanged O
was O
varied O
according O
to O
type O
and O
amount O
of O
alkali O
on O
fluoramphibole B-MAT
compositions B-PRO
. O


the O
composites B-DSC
show O
low O
values O
of O
dielectric B-PRO
permittivity I-PRO
( O
<nUm> O
– O
<nUm> O
) O
due O
to O
the O
formation O
of O
interconnected O
metal B-PRO
nanoparticle B-DSC
chains I-DSC
. O


the O
resistivity B-PRO
of O
the O
specimen O
dropped O
from O
<nUm> O
to O
<nUm> O
ocm2 O
to O
<nUm> O
to O
<nUm> O
ocm2 O
after O
ion B-SMT
exchange I-SMT
process I-SMT
which O
shows O
metallic B-PRO
and O
semiconducting B-PRO
behavior I-PRO
according O
to O
the O
reduction B-SMT
temperature O
. O


electron B-PRO
– I-PRO
vibrational I-PRO
interaction I-PRO
in O
5d O
state O
of O
ce3+ O
ion O
in O
( B-MAT
LiMg I-MAT
/ I-MAT
Li2Na I-MAT
/ I-MAT
Li3)BF6 I-MAT
phosphors B-APL


the O
electron B-PRO
– I-PRO
vibrational I-PRO
interaction I-PRO
( O
EVI B-PRO
) O
parameters O
such O
as O
huang B-PRO
– I-PRO
rhys I-PRO
factor I-PRO
, O
effective B-PRO
phonon I-PRO
energy I-PRO
and O
zero B-PRO
phonon I-PRO
line I-PRO
position I-PRO
were O
estimated O
using O
data O
from O
our O
recent O
reported O
work O
, O
on O
photoluminescence B-CMT
in O
rare O
earth O
doped B-DSC
complex O
hexafluorides B-MAT
phosphors B-APL
BF6LiMg B-MAT
, O
BF6Li2Na B-MAT
and O
BF6Li3 B-MAT
validity O
of O
results O
were O
established O
by O
modeling B-CMT
the I-CMT
emission I-CMT
line I-CMT
which O
was O
found O
to O
be O
in O
good O
agreement O
with O
experimental O
photoluminescence B-CMT
spectra O
. O


study O
of O
lattice B-PRO
softening I-PRO
on O
bi-system B-MAT
superconductor B-PRO
by O
means O
of O
119Sn B-CMT
mossbauer I-CMT
spectroscopy I-CMT


anomalous O
behavior O
of O
the O
mossbauer B-PRO
factor I-PRO
for O
tin B-MAT
impurity O
atoms O
in O
bi-system B-MAT
superconductors B-PRO
is O
found O
by O
mossbauer B-CMT
spectroscopy I-CMT
. O


this O
indicates O
the O
occurrence O
of O
lattice B-PRO
softening I-PRO
above O
Tc B-PRO
. O


A O
study O
on O
utilizing O
different O
metals O
as O
the O
back B-APL
contact I-APL
of O
CH6I3NPb B-MAT
perovskite B-SPL
solar B-APL
cells I-APL


organic O
– O
inorganic O
halide B-MAT
perovskite I-MAT
solar B-APL
cells I-APL
have O
attracted O
considerable O
interest O
due O
to O
their O
high O
efficiency B-PRO
and O
low O
fabrication O
cost O
. O


Au B-MAT
and O
Ag B-MAT
are O
usually O
used O
as O
the O
back B-APL
contact I-APL
metals I-APL
but O
have O
limitations O
such O
as O
Au B-MAT
is O
too O
expensive O
and O
Ag B-MAT
is O
unstable O
. O


here O
, O
Pt B-MAT
, O
Au B-MAT
, O
Ni B-MAT
, O
Cu B-MAT
, O
Cr B-MAT
and O
Ag B-MAT
were O
studied O
as O
the O
back B-APL
contact I-APL
electrodes I-APL
for O
perovskite B-APL
solar I-APL
cells I-APL
. O


we O
looked O
at O
how O
the O
work B-PRO
function I-PRO
of O
metals O
can O
affect O
their O
photovoltaic B-PRO
characteristics I-PRO
. O


the O
compositional B-PRO
and O
electrical B-CMT
characterizations I-CMT
were O
studied O
using O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
and O
electrochemical B-CMT
impedance I-CMT
spectroscopy I-CMT
( O
EIS B-CMT
) O
. O


the O
general O
trend O
observed O
was O
that O
the O
shunt B-PRO
resistance I-PRO
and O
open B-PRO
- I-PRO
circuit I-PRO
voltage I-PRO
of O
the O
devices O
decrease O
with O
the O
decreasing O
work B-PRO
function I-PRO
of O
the O
contact B-APL
metal I-APL
. O


the O
EIS B-CMT
measurements O
indicated O
that O
the O
internal B-PRO
resistance I-PRO
of O
the O
cell O
decreases O
when O
using O
spiro O
- O
OMeTAD O
in O
Au B-MAT
, O
Ag B-MAT
and O
Pt B-MAT
devices O
, O
whereas O
in O
the O
case O
of O
Ni B-MAT
, O
Cu B-MAT
and O
Cr B-MAT
devices O
, O
the O
internal B-PRO
resistance I-PRO
of O
the O
interface B-DSC
increases O
, O
indicating O
that O
spiro O
- O
OMeTAD O
is O
not O
a O
good O
HTM B-APL
with O
these O
metal B-APL
electrodes I-APL
. O


our O
results O
also O
showed O
that O
Cu B-MAT
and O
Ag B-MAT
were O
not O
stable O
in O
these O
devices O
and O
that O
the O
performance O
of O
the O
Ag B-MAT
device O
degraded O
faster O
than O
that O
of O
the O
Cu B-MAT
device O
. O


efficiencies B-PRO
of O
<nUm> O
% O
, O
<nUm> O
% O
, O
<nUm> O
% O
, O
<nUm> O
% O
, O
<nUm> O
% O
and O
<nUm> O
% O
were O
obtained O
for O
the O
devices O
with O
Au B-MAT
, O
Ag B-MAT
, O
Pt B-MAT
, O
Ni B-MAT
, O
Cu B-MAT
and O
Cr B-MAT
, O
respectively O
. O


synthesis O
and O
optical B-PRO
properties I-PRO
of O
zinc B-MAT
phosphate I-MAT
microspheres B-DSC


monodisperse B-DSC
zinc B-MAT
phosphate I-MAT
microspheres B-DSC
were O
synthesized O
by O
a O
facile B-SPL
solvothermal I-SPL
method I-SPL
in O
the O
presence O
of O
oleic O
acid O
. O


x-ray B-CMT
powder I-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
fourier B-CMT
transform I-CMT
infrared I-CMT
spectrum I-CMT
( O
FT-IR B-CMT
) O
, O
emission B-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
, O
and O
energy B-CMT
dispersive I-CMT
x-ray I-CMT
spectrum I-CMT
( O
EDX B-CMT
) O
were O
used O
to O
characterize O
the O
microstructures B-PRO
and O
morphologies B-PRO
of O
the O
as-obtained B-DSC
zinc B-MAT
phosphate I-MAT
samples O
. O


the O
experimental O
results O
indicate O
that O
the O
zinc B-MAT
phosphate I-MAT
products O
are O
well O
crystallized O
, O
and O
the O
morphologies B-PRO
of O
the O
samples O
can O
be O
easily O
controlled O
by O
the O
elaborate O
choice O
of O
oleic O
acid O
addition O
and O
the O
content O
of O
HNaO O
. O


furthermore O
, O
self B-PRO
- I-PRO
activated I-PRO
luminescent I-PRO
properties I-PRO
of O
the O
products O
are O
observed O
. O


the O
as-obtained B-DSC
samples O
show O
an O
intense O
blue O
emission O
under O
a O
long O
- O
wavelength O
UV O
light O
excitation O
of O
<nUm> O
nm O
. O


the O
possible O
luminescent B-PRO
mechanism I-PRO
may O
be O
ascribed O
to O
the O
carbon B-MAT
- O
related O
surface B-DSC
impurities O
or O
defects O
. O


electrochemical B-PRO
performance I-PRO
of O
FeLiO4P B-MAT
/ O
C B-MAT
synthesized O
by O
solid B-SMT
state I-SMT
reaction I-SMT
using O
different O
lithium B-MAT
and O
iron B-MAT
sources O


FeLiO4P B-MAT
/ O
C B-MAT
cathode B-APL
materials O
were O
prepared O
from O
different O
lithium B-MAT
and O
iron B-MAT
sources O
, O
using O
glucose O
as O
the O
carbon B-MAT
source O
and O
the O
reducing O
agent O
, O
via O
a O
solid B-SMT
state I-SMT
reaction I-SMT
. O


the O
samples O
were O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
, O
galvanostatic B-CMT
charge I-CMT
– I-CMT
discharge I-CMT
test I-CMT
and O
cyclic B-CMT
voltammetry I-CMT
( O
CV B-CMT
) O
. O


the O
results O
showed O
that O
the O
FeLiO4P B-MAT
/ O
C B-MAT
is O
olivine B-SPL
- O
type O
phase O
, O
and O
composed O
of O
relatively O
large O
particles B-DSC
of O
about O
<nUm> O
nm O
and O
some O
nano-sized B-DSC
particles I-DSC
, O
which O
favor O
the O
electronic B-PRO
conductivity I-PRO
. O


the O
FeLiO4P B-MAT
/ O
C B-MAT
cathode B-APL
material O
synthesized O
from O
CLi2O3 B-MAT
and O
Fe2O3 B-MAT
had O
the O
smallest O
particles B-DSC
and O
the O
highest O
uniformity O
. O


it O
delivered O
the O
capacity B-PRO
of O
<nUm> O
mAh O
/ O
g O
at O
0.2C O
, O
and O
had O
good O
reversibility B-PRO
and O
high O
capacity B-PRO
retention I-PRO
. O


the O
precursor O
of O
FeLiO4P B-MAT
/ O
C B-MAT
was O
characterized O
by O
thermogravimetry B-CMT
( O
TG B-CMT
) O
to O
discuss O
the O
crystallization B-PRO
formation I-PRO
mechanism I-PRO
of O
FeLiO4P B-MAT
. O


fabrication O
of O
CNSi B-MAT
– O
O7Sc2Si2 B-MAT
coatings B-APL
on O
C B-MAT
/ O
CSi B-MAT
composites B-DSC
at O
low O
temperatures O


CNSi B-MAT
– O
O7Sc2Si2 B-MAT
environmental B-APL
barrier I-APL
coatings I-APL
were O
fabricated O
on O
the O
surface B-DSC
of O
C B-MAT
/ O
CSi B-MAT
composites B-DSC
at O
low O
temperatures O
by O
adding O
CLi2O3 B-MAT
as O
sintering B-SMT
aids O
. O


with O
this O
addition O
, O
the O
fabrication O
temperature O
could O
be O
lowered O
about O
<nUm> O
– O
<nUm> O
° O
C O
. O


the O
shrinkage O
of O
the O
polysilazane O
– O
O7Sc2Si2 B-MAT
bars B-DSC
with O
and O
without O
CLi2O3 B-MAT
was O
tested O
by O
dilatometer O
. O


the O
results O
indicate O
that O
the O
shrinkage B-PRO
speed I-PRO
of O
the O
polysilazane O
– O
O7Sc2Si2 B-MAT
bar B-DSC
with O
CLi2O3 B-MAT
is O
faster O
than O
the O
one O
without O
CLi2O3 B-MAT
, O
indicating O
that O
the O
CLi2O3 B-MAT
greatly O
promotes O
the O
sintering B-SMT
of O
polysilazane O
– O
O7Sc2Si2 B-MAT
. O


water B-PRO
- I-PRO
vapor I-PRO
corrosion I-PRO
behavior I-PRO
of O
the O
CNSi B-MAT
– O
O7Sc2Si2 B-MAT
coated B-SMT
C B-MAT
/ O
CSi B-MAT
composites B-DSC
was O
carried O
out O
at O
<nUm> O
° O
C O
. O


the O
results O
reveal O
that O
the O
CNSi B-MAT
– O
O7Sc2Si2 B-MAT
coatings B-APL
can O
effectively O
protect O
the O
C B-MAT
/ O
CSi B-MAT
composites B-DSC
. O


the O
corrosion B-PRO
resistance I-PRO
of O
CNSi B-MAT
– O
O7Sc2Si2 B-MAT
coatings B-APL
is O
not O
degraded O
by O
adding O
CLi2O3 B-MAT
. O


synthesis O
of O
porous B-DSC
magnetic B-PRO
ferrite B-MAT
nanowires B-DSC
containing O
Mn B-MAT
and O
their O
application O
in O
water B-APL
treatment I-APL


two O
kinds O
of O
porous B-DSC
magnetic B-PRO
ferrite B-MAT
nanowires B-DSC
containing O
manganese B-MAT
( O
Fe2MnO4 B-MAT
and O
Mn B-MAT
doped B-DSC
Fe3O4 B-MAT
) O
have O
been O
successfully O
synthesized O
by O
thermal B-SMT
decomposition I-SMT
of O
organometallic O
compounds O
, O
using O
nitrilotriacetic O
acid O
( O
NA O
) O
as O
a O
chelating O
agent O
to O
coordinate O
with O
various O
ratios O
of O
Fe(II) B-MAT
and O
Mn(II) B-MAT
ions O
. O


the O
resultant O
Fe2MnO4 B-MAT
and O
Mn B-MAT
doped B-DSC
Fe3O4 B-MAT
nanostructures B-DSC
are O
superparamagnetic B-PRO
, O
and O
have O
magnetization B-PRO
saturation I-PRO
values O
of O
about O
<nUm> O
and O
<nUm> O
emu O
g-1 O
for O
Fe2MnO4 B-MAT
and O
Mn B-MAT
doped B-DSC
Fe3O4 B-MAT
, O
respectively O
. O


the O
brunauer B-PRO
– I-PRO
emmett I-PRO
– I-PRO
teller I-PRO
specific I-PRO
surface I-PRO
areas I-PRO
of O
the O
Fe2MnO4 B-MAT
and O
Mn B-MAT
doped B-DSC
Fe3O4 B-MAT
are O
<nUm> O
and O
<nUm> O
m2 O
g-1 O
, O
respectively O
. O


the O
as-prepared B-DSC
porous I-DSC
Fe2MnO4 B-MAT
and O
Mn B-MAT
doped B-DSC
Fe3O4 B-MAT
nanowires B-DSC
exhibit O
excellent O
ability O
to O
remove O
heavy O
metal O
ions O
and O
organic O
pollutant O
in O
waste O
water O
. O


In O
addition O
, O
these O
porous B-DSC
magnetic B-PRO
ferrites B-MAT
may O
be O
useful O
in O
other O
fields O
such O
as O
biomedicine B-APL
and O
Li B-APL
- I-APL
ion I-APL
batteries I-APL
. O


composition B-PRO
, O
structure B-PRO
, O
microhardness B-PRO
and O
residual B-PRO
stress I-PRO
of O
W B-MAT
– I-MAT
Ti I-MAT
– I-MAT
N I-MAT
films B-DSC
deposited O
by O
reactive B-SMT
magnetron I-SMT
sputtering I-SMT


W B-MAT
– I-MAT
Ti I-MAT
– I-MAT
N I-MAT
films B-DSC
were O
deposited O
by O
reactive B-SMT
DC I-SMT
magnetron I-SMT
sputtering I-SMT
from O
a O
W B-MAT
– I-MAT
Ti I-MAT
( I-MAT
<nUm> I-MAT
at. I-MAT
% I-MAT
) I-MAT
target O
, O
in O
a O
mixture O
of O
argon O
and O
nitrogen O
at O
a O
total O
pressure O
of O
<nUm> O
Pa O
, O
onto O
steel B-MAT
and O
silicon B-MAT
substrates B-DSC
. O


the O
crystal B-PRO
structure I-PRO
, O
microstructure B-PRO
, O
composition B-PRO
, O
micro-hardness B-PRO
and O
residual B-PRO
stress I-PRO
were O
studied O
as O
a O
function O
of O
the O
partial O
pressure O
of O
nitrogen O
. O


films B-DSC
containing O
less O
than O
<nUm> O
at. O
% O
nitrogen O
were O
composed O
of O
a O
mixture O
of O
b.c.c B-SPL
. O


W B-MAT
and O
f.c.c. B-SPL
NW2 B-MAT
phases O
, O
while O
only O
the O
f.c.c. B-SPL
phase O
, O
probably O
WxTi1-xNy B-MAT
, O
was O
present O
in O
the O
films B-DSC
with O
a O
nitrogen B-PRO
concentration I-PRO
of O
[N] B-PRO
≥ O
<nUm> O
at. O
% O
. O


the O
microhardness B-PRO
of O
the O
W B-MAT
– I-MAT
Ti I-MAT
– I-MAT
N I-MAT
films B-DSC
increased O
with O
increasing O
nitrogen B-PRO
concentration I-PRO
from O
<nUm> O
GPa O
for O
[N] B-PRO
= O
<nUm> O
up O
to O
a O
maximum O
of O
approximately O
<nUm> O
GPa O
at O
[N] O
= O
<nUm> O
at. O
% O
. O


this O
was O
accompanied O
by O
increasing O
microstrain B-PRO
, O
while O
the O
compressive B-PRO
residual I-PRO
stress I-PRO
remained O
in O
the O
range O
of O
<nUm> O
– O
<nUm> O
GPa O
. O


the O
single B-DSC
- I-DSC
phase I-DSC
W B-MAT
– I-MAT
Ti I-MAT
– I-MAT
N I-MAT
films B-DSC
, O
with O
[N] B-PRO
≥ O
<nUm> O
at. O
% O
, O
exhibited O
a O
micro-hardness B-PRO
of O
approximately O
<nUm> O
GPa O
and O
a O
large O
compressive B-PRO
stress I-PRO
of O
, O
at O
most O
, O
approximately O
<nUm> O
GPa O
at O
[N] B-PRO
= O
<nUm> O
at. O
% O
. O


the O
maximum O
microhardness B-PRO
was O
found O
in O
films B-DSC
that O
simultaneously O
possessed O
: O
( O
i O
) O
the O
presence O
of O
two O
crystalline O
phases O
; O
( O
ii O
) O
large O
microstrain B-PRO
; O
and O
( O
iii O
) O
relatively O
low O
compressive B-PRO
residual I-PRO
stress I-PRO
. O


O2Ti B-MAT
– O
g-C3N4 B-MAT
composite B-DSC
materials O
for O
photocatalytic B-APL
H I-APL
evolution I-APL
under O
visible O
light O
irradiation O


In O
this O
investigation O
, O
we O
report O
the O
preparation O
of O
O2Ti B-MAT
– O
g-C3N4 B-MAT
composite B-DSC
materials O
with O
varying O
the O
wt. O
% O
of O
g-C3N4 B-MAT
, O
the O
characterization O
of O
these O
materials O
by O
various O
techniques O
and O
photocatalytic B-APL
hydrogen I-APL
production I-APL
under O
visible O
light O
irradiation O
in O
the O
presence O
of O
methanol O
. O


the O
x-ray B-CMT
powder I-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
shows O
that O
the O
composite B-DSC
materials O
are O
consist O
of O
anatase B-SPL
O2Ti B-MAT
and O
g-C3N4 B-MAT
. O


fourier B-CMT
transform I-CMT
infrared I-CMT
( O
FT-IR B-CMT
) O
spectra O
show O
that O
the O
absorbance B-PRO
band I-PRO
intensity I-PRO
of O
composite B-DSC
materials O
was O
stronger O
than O
that O
of O
C3N4 B-MAT
. O


the O
UV B-CMT
– I-CMT
vis I-CMT
absorption I-CMT
spectra O
show O
that O
the O
absorption B-PRO
edge I-PRO
of O
the O
composite B-DSC
materials O
shifts O
to O
the O
lower O
energy O
region O
comparing O
to O
pure O
anatase B-SPL
and O
to O
longer O
wavelengths O
with O
increasing O
the O
amount O
of O
C3N4 B-MAT
. O


the O
significant O
photoluminescence B-CMT
quenching O
was O
observed O
in O
O2Ti B-MAT
– O
C3N4 B-MAT
composite B-DSC
materials O
, O
indicating O
the O
charge O
transfer O
from O
C3N4 B-MAT
to O
O2Ti B-MAT
. O


the O
visible O
light O
induced O
H B-PRO
evolution I-PRO
rate I-PRO
was O
remarkably O
enhanced O
by O
coupling O
O2Ti B-MAT
with O
C3N4 B-MAT
. O


preparation O
of O
O3Y2 B-MAT
- O
doped B-DSC
CeO2 B-MAT
nanopowders B-DSC
by O
microwave B-SMT
- I-SMT
induced I-SMT
combustion I-SMT
process I-SMT


O3Y2 B-MAT
- O
doped B-DSC
CeO2 B-MAT
nanopowders B-DSC
were O
successfully O
synthesized O
by O
microwave B-SMT
- I-SMT
induced I-SMT
combustion I-SMT
process I-SMT
using O
cerium O
nitrate O
hexahydrate O
, O
yttrium O
nitrate O
hexahydrate O
, O
and O
urea O
. O


the O
process O
took O
only O
a O
few O
minutes O
to O
obtain O
O3Y2 B-MAT
- O
doped B-DSC
CeO2 B-MAT
powders B-DSC
. O


the O
nanopowders B-DSC
were O
investigated O
by O
differential B-CMT
thermal I-CMT
analyzer I-CMT
/ O
thermogravimeter B-CMT
( O
TG B-CMT
/ I-CMT
DTA I-CMT
) O
, O
x-ray B-CMT
diffractometer I-CMT
( O
XRD B-CMT
) O
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
, O
and O
specific B-CMT
surface I-CMT
area I-CMT
measurements I-CMT
( O
BET B-CMT
) O
. O


the O
as-received B-DSC
O3Y2 B-MAT
- O
doped B-DSC
CeO2 B-MAT
powders B-DSC
revealed O
that O
the O
average O
particle O
size O
ranged O
from O
<nUm> O
to O
<nUm> O
nm O
, O
crystallite O
dimension O
varied O
from O
<nUm> O
to O
<nUm> O
nm O
, O
and O
the O
distribution O
of O
specific B-PRO
surface I-PRO
range O
from O
<nUm> O
to O
<nUm> O
m2 O
/ O
g O
. O


moisture B-PRO
- I-PRO
resistant I-PRO
MoS2 B-MAT
- O
based O
composite B-DSC
lubricant B-APL
films I-APL


the O
moisture B-PRO
resistance I-PRO
of O
sputter B-SMT
- I-SMT
coated I-SMT
composite B-DSC
films I-DSC
of O
MoS2 B-MAT
can O
be O
markedly O
increased O
when O
the O
MoS2 B-MAT
is O
sputter B-SMT
deposited O
with O
water B-PRO
- I-PRO
repellent I-PRO
additives O
. O


to O
increase O
the O
adhesion B-PRO
of O
such O
coatings B-APL
and O
to O
prevent O
corrosive O
attack O
of O
the O
substrate B-DSC
, O
generally O
steel B-MAT
, O
a O
thin O
corrosion B-PRO
- I-PRO
resistant I-PRO
sulphide B-MAT
- O
forming O
intermediate O
layer B-DSC
is O
applied O
previously O
on O
the O
functional O
surface B-DSC
and O
serves O
as O
an O
interlayer B-DSC
. O


with O
a O
sputtering B-SMT
process O
coatings B-APL
of O
these O
lubricants B-APL
, O
which O
are O
durable B-PRO
in O
the O
earth O
's O
atmosphere O
and O
adhere O
well O
to O
their O
support O
, O
are O
obtained O
. O


friction B-PRO
and O
wear B-PRO
results O
for O
such O
composite B-DSC
lubricant B-APL
films B-DSC
on O
different O
interlayers B-DSC
and O
various O
substrates B-DSC
, O
which O
were O
obtained O
in O
dry O
and O
humid O
air O
from O
pin O
and O
disc O
experiments O
and O
from O
functional O
bearing B-APL
elements I-APL
of O
precision B-APL
engineering I-APL
systems I-APL
, O
confirm O
the O
improvements O
. O


effect O
of O
dispersed O
Ag B-MAT
on O
the O
dielectric B-PRO
properties I-PRO
of O
sol B-SMT
– I-SMT
gel I-SMT
derived O
O3PbTi B-MAT
thin B-DSC
films I-DSC
on O
ITO B-MAT
/ O
glass B-MAT
substrate B-DSC


Ag B-MAT
- O
dispersed O
O3PbTi B-MAT
films B-DSC
were O
prepared O
on O
ITO B-MAT
/ O
glass B-MAT
substrate B-DSC
by O
the O
sol B-SMT
– I-SMT
gel I-SMT
process O
. O


XRD B-CMT
was O
carried O
out O
to O
characterize O
the O
crystalline B-DSC
phases O
. O


A O
spectrophotometer B-CMT
and O
LCZ B-CMT
meter O
were O
used O
to O
measure O
the O
UV B-CMT
– I-CMT
VIS I-CMT
absorption I-CMT
spectra O
and O
dielectric B-PRO
properties I-PRO
of O
the O
films B-DSC
. O


Ag B-MAT
particles B-DSC
had O
formed O
in O
the O
O3PbTi B-MAT
matrix B-DSC
. O


their O
size O
and O
quantity O
increase O
with O
the O
increase O
in O
silver B-MAT
concentration O
. O


Ag B-MAT
particles B-DSC
are O
found O
to O
have O
an O
effect O
on O
the O
dielectric B-PRO
properties I-PRO
of O
O3PbTi B-MAT
films B-DSC
. O


with O
the O
addition O
of O
Ag B-MAT
nanoparticles B-DSC
into O
O3PbTi B-MAT
films B-DSC
initially O
, O
the O
dielectric B-PRO
constant I-PRO
of O
the O
films B-DSC
increases O
and O
the O
dissipation B-PRO
factor I-PRO
of O
the O
films B-DSC
decreases O
. O


then O
with O
increasing O
of O
silver B-MAT
concentration O
, O
the O
dissipation B-PRO
factor I-PRO
of O
the O
film B-DSC
increases O
. O


however O
, O
the O
effect O
of O
the O
dispersed O
silver B-MAT
nanoparticles B-DSC
on O
dielectric B-PRO
constant I-PRO
gives O
different O
results O
at O
different O
frequency O
ranges O
. O


At O
low O
frequency O
it O
increases O
with O
the O
increase O
in O
silver B-MAT
concentration O
, O
which O
coincides O
well O
with O
percolation B-CMT
law I-CMT
. O


At O
high O
frequency O
, O
when O
silver B-MAT
concentration O
reaches O
<nUm> O
mol O
% O
, O
the O
dissipation B-PRO
factor I-PRO
markedly O
increases O
and O
the O
dielectric B-PRO
constant I-PRO
decreases O
, O
which O
departs O
from O
percolation B-CMT
law I-CMT
due O
to O
the O
interaction O
of O
ferroelectrics B-PRO
domains I-PRO
and O
silver B-MAT
particles B-DSC
. O


toughening B-SMT
macroporous B-DSC
alumina B-MAT
membrane B-DSC
supports B-APL
with O
YSZ B-MAT
powders B-DSC


macroporous B-DSC
alumina B-MAT
is O
an O
important O
support B-APL
in O
membrane O
fields O
because O
of O
its O
stabilities B-PRO
to O
withstand O
exposure O
to O
high O
temperature O
, O
harsh O
chemical O
environment O
and O
high O
mechanical B-PRO
strength I-PRO
. O


however O
, O
the O
essence O
of O
brittleness B-PRO
can O
greatly O
shorten O
the O
life B-PRO
span I-PRO
and O
restrict O
the O
application O
fields O
. O


In O
this O
paper O
, O
YSZ B-MAT
( O
O2Zr B-MAT
stabilized B-DSC
by O
<nUm> O
mol O
% O
O3Y2 B-MAT
) O
powders B-DSC
were O
added O
into O
alumina B-MAT
powders B-DSC
to O
improve O
the O
fracture B-PRO
toughness I-PRO
of O
macroporous B-DSC
Al2O3 B-MAT
supports B-APL
sintered B-SMT
at O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
. O


the O
results O
show O
that O
the O
fracture B-PRO
toughness I-PRO
and O
the O
corresponding O
bending B-PRO
strength I-PRO
of O
supports O
are O
simultaneously O
greatly O
influenced O
by O
various O
YSZ B-MAT
contents O
. O


when O
YSZ B-MAT
content O
is O
6wt O
% O
, O
the O
maximum O
value O
of O
the O
fracture B-PRO
toughness I-PRO
is O
<nUm> O
MPa*m1 O
/ O
<nUm> O
, O
and O
the O
bending B-PRO
strength I-PRO
is O
up O
to O
<nUm> O
MPa O
. O


by O
SEM B-CMT
and O
XRD B-CMT
analysis O
, O
the O
phase B-PRO
transformation I-PRO
of O
the O
uniform O
distribution O
t-ZrO2 B-MAT
into O
m-ZrO2 B-MAT
is O
the O
main O
cause O
which O
improves O
the O
fracture B-PRO
toughness I-PRO
of O
macroporous B-DSC
Al2O3 B-MAT
supports B-APL
. O


lowering O
of O
the O
sintering B-SMT
temperature O
by O
adding O
YSZ B-MAT
additives O
is O
also O
discovered O
here O
. O


the O
fracture B-PRO
toughness I-PRO
of O
the O
supports O
sintered B-SMT
at O
<nUm> O
° O
C O
by O
adding O
YSZ B-MAT
powder B-DSC
is O
higher O
than O
that O
of O
the O
supports O
sintered B-SMT
at O
<nUm> O
° O
C O
without O
adding O
any O
additives O
. O


carbide B-MAT
matrix B-DSC
composites I-DSC
by O
fast B-SMT
MW I-SMT
reaction I-SMT
- I-SMT
sintering I-SMT
in O
air O
of O
B4C B-MAT
– O
CSi B-MAT
– O
Al B-MAT
mixtures B-DSC


the O
behavior O
of O
B4C B-MAT
/ O
CSi B-MAT
/ O
Al B-MAT
mixtures B-DSC
during O
MW B-SMT
heating I-SMT
in O
air O
was O
studied O
. O


it O
was O
determined O
that O
B4C B-MAT
/ O
CSi B-MAT
/ O
Al B-MAT
mixtures B-DSC
generate O
well O
- O
densified B-SMT
specimens O
. O


the O
fired B-SMT
specimens O
are O
made O
from O
a O
B4C B-MAT
matrix B-DSC
, O
the O
porosity B-PRO
of O
which O
is O
filled O
with O
products O
of O
the O
reactions O
of O
Al B-MAT
with O
B4C B-MAT
and O
the O
gases O
of O
air O
. O


phases O
detected O
included O
Al2CO B-MAT
, O
Al27NO39 B-MAT
, O
Al10N8O3 B-MAT
, O
Al3B48C B-MAT
and O
AlN B-MAT
. O


the O
CSi B-MAT
high O
aspect O
ratio O
grains O
are O
protected O
in O
this O
environment O
from O
oxidation B-SMT
, O
being O
able O
to O
act O
as O
a O
toughening B-APL
filler I-APL
. O


oxygen B-PRO
nonstoichiometry I-PRO
and O
defect B-PRO
structure I-PRO
analysis O
of O
b-site B-PRO
mixed I-PRO
perovskite B-SPL
- O
type O
oxide B-MAT
( I-MAT
La I-MAT
, I-MAT
Sr)(Cr I-MAT
, I-MAT
M)O3- I-MAT
δ I-MAT
( I-MAT
m I-MAT
= I-MAT
Ti I-MAT
, I-MAT
Mn I-MAT
and I-MAT
Fe I-MAT
) I-MAT


the O
defect B-PRO
chemical I-PRO
relationships I-PRO
in O
various O
b-site B-PRO
mixed I-PRO
CrLaO3 B-MAT
- O
based O
ceramics B-DSC
were O
investigated O
by O
means O
of O
high B-CMT
- I-CMT
temperature I-CMT
gravimetry I-CMT
. O


the O
nonstoichiometric B-PRO
deviation I-PRO
, O
δ B-PRO
, O
in O
(La0.7Sr0.3)(Cr1-yTiy)O3-d B-MAT
( I-MAT
y I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
and I-MAT
<nUm> I-MAT
) I-MAT
( O
LSCT B-MAT
) O
, O
(La0.75Sr0.25)(Cr0.5Mn0.5)O3-d B-MAT
( O
LSCM B-MAT
) O
and O
(La0.75Sr0.25)(Cr0.5Fe0.5)O3-d B-MAT
( O
LSCF B-MAT
) O
were O
measured O
as O
a O
function O
of O
oxygen O
partial O
pressure O
, O
P O
O O
<nUm> O
, O
at O
temperatures O
between O
<nUm> O
and O
1373K O
. O


the O
effects O
of O
partial O
replacement O
of O
the O
donor O
on O
Cr B-MAT
- O
sites O
were O
examined O
in O
LSCT B-MAT
. O


In O
LSCM B-MAT
and O
LSCF B-MAT
, O
effects O
of O
the O
partial O
substitution O
of O
isovalent O
transition O
metals O
on O
Cr B-MAT
- O
sites O
are O
discussed O
. O


oxygen B-PRO
nonstoichiometries I-PRO
of O
various O
b-site B-PRO
mixed I-PRO
CrLaO3 B-MAT
- O
based O
ceramics B-DSC
were O
compared O
with O
those O
of O
a-site B-PRO
substituted I-PRO
perovskite B-SPL
- O
type O
oxides B-MAT
, O
(La1-xSrx)MO3-d B-MAT
( I-MAT
where I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
– I-MAT
<nUm> I-MAT
, I-MAT
m I-MAT
= I-MAT
Cr I-MAT
, I-MAT
Mn I-MAT
and I-MAT
Fe I-MAT
) I-MAT
. O


the O
partial O
substitution O
of O
the O
different O
elements O
on O
Cr B-MAT
- O
sites O
drastically O
changed O
the O
P O
O O
<nUm> O
and O
temperature O
dependence O
of O
oxygen B-PRO
vacancy I-PRO
formation O
in O
CrLaO3 B-MAT
- O
based O
ceramics B-DSC
. O


the O
defect B-PRO
equilibrium I-PRO
relationships I-PRO
of O
the O
localized O
electron O
well O
explained O
the O
oxygen B-PRO
vacancy I-PRO
formation O
in O
b-site B-PRO
mixed I-PRO
CrLaO3 B-MAT
- O
based O
ceramics B-DSC
. O


oxygen B-PRO
vacancy I-PRO
formation O
in O
(La0.7Sr0.3)(Cr1-yTiy)O3-d B-MAT
( I-MAT
y I-MAT
= I-MAT
<nUm> I-MAT
and I-MAT
<nUm> I-MAT
) I-MAT
and O
(La0.7Sr0.3)(Cr0.7Ti0.3)O3-d B-MAT
was O
explained O
by O
redox O
reaction O
of O
Cr B-MAT
and O
Ti B-MAT
ions O
, O
respectively O
. O


the O
defect B-PRO
equilibrium I-PRO
relationships I-PRO
of O
LSCM B-MAT
and O
LSCF B-MAT
were O
interpreted O
by O
redox O
reaction O
of O
Mn B-MAT
ions O
and O
Fe B-MAT
ions O
, O
respectively O
. O


No O
significant O
change O
in O
valence O
state O
of O
cr3+ O
ions O
in O
LSCM B-MAT
and O
LSCF B-MAT
was O
confirmed O
under O
the O
experimental O
conditions O
. O


flowerlike B-DSC
iron B-MAT
oxide I-MAT
nanostructures B-DSC
and O
their O
application O
in O
microwave B-APL
absorption I-APL


self O
- O
assembled O
flowerlike B-DSC
a-Fe2O3 B-MAT
, O
Fe3O4 B-MAT
and O
g-Fe2O3 B-MAT
were O
fabricated O
by O
a O
simple O
calcination B-SMT
procedure I-SMT
. O


the O
structure B-CMT
characterization I-CMT
shows O
that O
the O
flowerlike B-DSC
morphology B-PRO
and O
the O
size O
of O
the O
nanostructures B-DSC
are O
perfectly O
maintained O
in O
the O
conversion O
of O
precursor O
to O
a-Fe2O3 B-MAT
, O
Fe3O4 B-MAT
, O
and O
g-Fe2O3 B-MAT
. O


the O
complex B-PRO
permittivity I-PRO
and O
permeability B-PRO
results O
indicate O
that O
the O
dielectric B-PRO
and O
magnetic B-PRO
loss I-PRO
of O
Fe3O4 B-MAT
flower B-DSC
are O
both O
higher O
than O
those O
of O
g-Fe2O3 B-MAT
flower B-DSC
. O


In O
addition O
, O
Fe3O4 B-MAT
flower B-DSC
shows O
a O
good O
electromagnetic B-PRO
impedance I-PRO
match O
and O
its O
microwave B-PRO
absorption I-PRO
mainly O
originates O
from O
magnetic B-PRO
loss I-PRO
rather O
than O
dielectric B-PRO
loss I-PRO
. O


an O
optimal O
reflection B-PRO
loss I-PRO
of O
-46.0 O
dB O
is O
found O
at O
3.4GHz O
for O
flowerlike B-DSC
Fe3O4 B-MAT
, O
which O
indicates O
that O
the O
sample O
can O
be O
used O
as O
a O
highly O
efficient O
microwave B-APL
absorber I-APL
. O


effect O
of O
ClLi B-MAT
on O
the O
crystallization B-PRO
behavior I-PRO
and O
luminescence B-PRO
of O
Al5O12Y3 B-MAT
: I-MAT
Tb I-MAT


the O
single B-DSC
- I-DSC
phase I-DSC
cubic B-SPL
Al5O12Y3 B-MAT
: I-MAT
<nUm> I-MAT
% I-MAT
Tb I-MAT
sol B-SMT
– I-SMT
gel I-SMT
- O
derived O
powders B-DSC
were O
prepared O
after O
firing B-SMT
at O
<nUm> O
° O
C O
for O
2h O
when O
a O
ClLi B-MAT
flux O
was O
used O
. O


the O
addition O
of O
the O
ClLi B-MAT
can O
increase O
the O
crystalline B-PRO
size I-PRO
of O
the O
powders B-DSC
at O
low O
temperatures O
. O


by O
using O
the O
broadening O
effect O
of O
x-ray B-CMT
patterns I-CMT
, O
the O
estimated O
crystalline B-PRO
size I-PRO
of O
the O
powder B-DSC
with O
20wt. O
% O
ClLi B-MAT
addition O
fired B-SMT
at O
<nUm> O
° O
C O
for O
2h O
was O
evaluated O
as O
<nUm> O
Å O
. O


both O
emission O
and O
excitation B-CMT
luminescent I-CMT
spectra I-CMT
of O
the O
samples O
were O
measured O
. O


emission B-CMT
spectra I-CMT
of O
the O
synthesized O
powders B-DSC
mainly O
show O
5D4 O
– O
6F O
transition O
under O
<nUm> O
nm O
excitation O
. O


the O
excitation B-CMT
spectra I-CMT
of O
the O
tb3+ O
ions O
are O
different O
between O
amorphous B-DSC
and O
crystalline B-DSC
phase O
because O
of O
the O
crystal B-PRO
field I-PRO
effect I-PRO
. O


the O
excitation B-CMT
spectra I-CMT
also O
help O
observing O
the O
degree O
of O
the O
crystallinity B-PRO
of O
the O
resulting O
YAG B-MAT
phase O
. O


thermal B-PRO
expansion I-PRO
and O
cation B-PRO
disorder I-PRO
in O
Bi2InNbO7 B-MAT


the O
structure B-PRO
of O
the O
pyrochlore B-SPL
- O
type O
oxide O
Bi2InNbO7 B-MAT
has O
been O
investigated O
between O
room O
temperature O
and O
<nUm> O
° O
C O
using O
electron O
and O
synchrotron B-CMT
x-ray I-CMT
powder I-CMT
diffraction I-CMT
and O
at O
room O
temperature O
and O
10K O
using O
neutron B-CMT
diffraction I-CMT
methods I-CMT
. O


Bi2InNbO7 B-MAT
exhibits O
an O
A2B2O7 B-MAT
cubic B-SPL
pyrochlore B-MAT
- O
type O
average O
structure O
at O
all O
temperatures O
that O
is O
characterized O
by O
an O
apparently O
random O
mixing O
of O
the O
in3+ O
and O
nb5+ O
cations O
on O
the O
octahedral O
B O
sites O
. O


the O
Bi B-MAT
cations O
on O
the O
eight O
- O
coordinate O
pyrochlore B-MAT
A O
sites O
are O
displacively O
disordered O
, O
presumably O
as O
a O
consequence O
of O
their O
lone B-PRO
pair I-PRO
electron I-PRO
configuration I-PRO
. O


heating B-SMT
the O
sample O
does O
not O
alter O
this O
disorder O
. O


microstructural B-CMT
analysis I-CMT
of O
impurity O
segregation O
around O
b-Nb B-MAT
precipitates B-DSC
in O
Zr B-MAT
– I-MAT
Nb I-MAT
alloy B-DSC
using O
positron B-CMT
annihilation I-CMT
spectroscopy I-CMT
and O
atom B-CMT
probe I-CMT
tomography I-CMT


impurity O
segregation O
at O
the O
interface B-DSC
between O
b-Nb B-MAT
precipitates B-DSC
and O
a-Zr B-MAT
matrix B-DSC
in O
zr-2.5wt. B-MAT
% I-MAT
Nb I-MAT
alloy B-DSC
was O
investigated O
by O
complementary O
analysis O
with O
positron B-CMT
annihilation I-CMT
spectroscopy I-CMT
( O
PAS B-CMT
) O
and O
atom B-CMT
probe I-CMT
tomography I-CMT
( O
APT B-CMT
) O
. O


Fe B-MAT
segregation O
and O
Fe B-MAT
- O
decorated O
defects O
were O
found O
at O
the O
interface B-DSC
. O


PAS B-CMT
also O
suggested O
that O
Fe B-MAT
was O
segregated O
to O
a O
concentration O
of O
several O
tens O
of O
percent O
at O
a O
local O
region O
at O
the O
interface B-DSC
, O
which O
is O
approximately O
one O
order O
of O
magnitude O
higher O
than O
APT B-CMT
and O
difficult O
to O
observe O
directly O
even O
using O
APT B-CMT
. O


the O
effect O
of O
modified O
interfaces B-DSC
on O
the O
mechanical B-PRO
property I-PRO
of O
b-silicon B-MAT
nitride I-MAT
whiskers B-DSC
reinforced O
Cu B-MAT
matrix B-DSC
composites I-DSC


Ag B-MAT
- O
coated B-SMT
b-Si3N4 B-MAT
whiskers B-DSC
reinforced O
Cu B-MAT
matrix B-DSC
composites I-DSC
( O
ASCMMCs B-MAT
) O
were O
prepared O
by O
powder B-SMT
metallurgy I-SMT
method I-SMT
. O


A O
quite O
thin O
Ag B-MAT
layer B-DSC
was O
deposited O
on O
the O
surface B-DSC
of O
b-Si3N4 B-MAT
whiskers B-DSC
with O
the O
aim O
of O
improving O
the O
interfacial B-PRO
bonding I-PRO
between O
b-Si3N4 B-MAT
whiskers B-DSC
and O
Cu B-MAT
matrix B-DSC
. O


the O
results O
indicated O
that O
ASCMMCs B-MAT
had O
both O
higher O
bending B-PRO
strength I-PRO
and O
higher O
hardness B-PRO
than O
the O
uncoated B-DSC
b-Si3N4 B-MAT
whiskers B-DSC
reinforced O
Cu B-MAT
matrix B-DSC
composites I-DSC
( O
USCMMCs B-DSC
) O
. O


the O
enhanced O
mechanical B-PRO
property I-PRO
was O
attributed O
to O
the O
promoted O
densification B-SMT
of O
composites B-DSC
, O
the O
reduced O
aggregation O
of O
b-Si3N4 B-MAT
whiskers B-DSC
and O
the O
enhanced O
interfacial B-PRO
bonding I-PRO
between O
b-Si3N4 B-MAT
whiskers B-DSC
and O
Cu B-MAT
matrix B-DSC
. O


the O
Ag B-MAT
coating B-APL
was O
helpful O
to O
the O
formation O
of O
a O
transition B-DSC
layer I-DSC
between O
b-Si3N4 B-MAT
whiskers B-DSC
and O
Cu B-MAT
matrix B-DSC
to O
overcome O
the O
poor O
interfacial B-PRO
wetting I-PRO
, O
thus O
enhanced O
the O
mechanical B-PRO
property I-PRO
. O


but O
excessive O
Ag B-MAT
coating B-SMT
did O
not O
bring O
about O
further O
improved O
mechanical B-PRO
performance I-PRO
due O
to O
the O
increased O
possibility O
of O
interfacial O
sliding O
. O


the O
molecular O
adsorption O
of O
NO2 O
and O
the O
formation O
of O
N2O3 O
on O
Au(111) B-MAT


the O
adsorption O
of O
NO2 O
on O
Au(111) B-MAT
has O
been O
investigated O
using O
temperature B-CMT
programmed I-CMT
desorption I-CMT
( O
TPD B-CMT
) O
and O
high B-CMT
resolution I-CMT
electron I-CMT
energy I-CMT
loss I-CMT
spectroscopy I-CMT
( O
HREELS B-CMT
) O
. O


At O
<nUm> O
K O
, O
NO2 O
is O
adsorbed O
molecularly O
to O
form O
a O
Au(111) B-MAT
O,O'-nitrito O
surface B-DSC
chelate O
with O
c2v B-SPL
symmetry O
. O


the O
saturation O
coverage O
of O
chemisorbed O
NO2 O
is O
about O
<nUm> O
monolayers O
. O


the O
adsorption O
is O
reversible O
and O
NO2 O
desorbs O
with O
first O
- O
order O
kinetics O
and O
an O
activation B-PRO
energy I-PRO
of O
<nUm> O
kcal O
/ O
mol O
. O


when O
the O
chemisorbed O
state O
is O
saturated O
, O
an O
NO2 O
multilayer B-DSC
can O
be O
formed O
at O
<nUm> O
K O
with O
greater O
NO2 O
exposures O
. O


also O
, O
when O
the O
chemisorbed O
NO2 O
surface B-DSC
chelate O
is O
exposed O
to O
NO O
at O
<nUm> O
K O
, O
N2O3 O
is O
formed O
on O
the O
surface B-DSC
in O
an O
upright O
configuration O
. O


while O
it O
is O
not O
clear O
whether O
NO2 O
chemisorbs O
on O
Au(111) B-MAT
as O
a O
radical O
, O
its O
reactivity O
towards O
gas O
- O
phase O
NO O
to O
produce O
adsorbed O
N2O3 O
shows O
that O
it O
is O
capable O
of O
undergoing O
radical O
- O
radical O
types O
of O
reactions O
. O


the O
reaction O
can O
be O
reversed O
by O
warming O
to O
<nUm> O
K O
implying O
that O
the O
N-N O
bond B-PRO
energy I-PRO
is O
approximately O
<nUm> O
kcal O
/ O
mol O
. O


NO O
and O
N2O O
do O
not O
adsorb O
on O
Au(111) B-MAT
at O
<nUm> O
K. O
in O
ultrahigh O
vacuum O
. O


epitaxial O
growth O
and O
characterization O
of O
high O
- O
quality O
aluminum B-MAT
films B-DSC
on O
sapphire B-MAT
substrates B-DSC
by O
molecular B-SMT
beam I-SMT
epitaxy I-SMT


high O
- O
quality O
Al B-MAT
epitaxial B-DSC
films I-DSC
with O
homogeneous O
thickness O
have O
been O
epitaxially O
grown O
on O
<nUm> O
inch O
sapphire B-MAT
substrates B-DSC
by O
molecular B-CMT
beam I-CMT
epitaxy I-CMT
with O
an O
in-plane O
alignment O
of O
al[10] B-MAT
/ O
Al2O3[100] B-MAT
. O


the O
as-grown B-DSC
about O
<nUm> O
nm O
- O
thick O
Al B-MAT
( O
<nUm> O
) O
films B-DSC
grown O
at O
<nUm> O
° O
C O
show O
excellent O
uniform O
thickness O
distribution O
over O
the O
whole O
<nUm> O
inch O
substrate B-DSC
and O
a O
very O
flat O
Al B-MAT
surface B-DSC
with O
the O
surface B-PRO
root-mean-square I-PRO
roughness I-PRO
of O
<nUm> O
nm O
, O
as O
well O
as O
high O
crystalline B-PRO
qualities I-PRO
with O
the O
Al B-MAT
( O
<nUm> O
) O
full O
width O
at O
half O
maximum O
as O
small O
as O
<nUm> O
° O
. O


there O
is O
no O
interfacial B-DSC
layer I-DSC
existing O
between O
as-grown B-DSC
Al B-MAT
epitaxial B-DSC
films I-DSC
and O
sapphire B-MAT
substrates B-DSC
. O


instead O
, O
sharp O
and O
abrupt O
Al B-MAT
/ O
Al2O3 B-MAT
hetero B-DSC
- I-DSC
interfaces I-DSC
are O
achieved O
. O


the O
effects O
of O
the O
growth O
temperature O
on O
the O
surface B-PRO
morphologies I-PRO
and O
the O
crystalline B-PRO
qualities I-PRO
of O
the O
as-grown B-DSC
Al B-MAT
epitaxial B-DSC
films I-DSC
have O
been O
studied O
in O
detail O
. O


this O
achievement O
of O
Al B-MAT
epitaxial B-DSC
films I-DSC
is O
of O
great O
importance O
in O
the O
application O
of O
Al B-MAT
- O
based O
microelectronic B-APL
devices I-APL
. O


synthesis O
and O
upconversion B-PRO
luminescence I-PRO
properties I-PRO
of O
monodisperse B-DSC
O3Y2 B-MAT
: I-MAT
Yb I-MAT
, I-MAT
Ho I-MAT
spherical B-DSC
particles I-DSC


monodispersed B-DSC
spherical I-DSC
O3Y2 B-MAT
: I-MAT
Yb I-MAT
, I-MAT
Ho I-MAT
upconversion B-PRO
luminescence I-PRO
( O
UCL B-PRO
) O
particles B-DSC
with O
sizes O
of O
<nUm> O
– O
<nUm> O
nm O
are O
prepared O
using O
a O
homogeneous B-SMT
precipitation I-SMT
method I-SMT
. O


it O
is O
found O
that O
aging B-SMT
time O
, O
varying O
between O
<nUm> O
and O
<nUm> O
min O
, O
has O
a O
profound O
influence O
on O
the O
precursor O
size O
, O
which O
systematically O
decreases O
from O
<nUm> O
nm O
to O
<nUm> O
nm O
. O


the O
precursor O
shows O
poor O
stability B-PRO
when O
aging B-SMT
time O
is O
<nUm> O
min O
, O
and O
the O
stability B-PRO
of O
precursor O
can O
be O
improved O
by O
increasing O
the O
urea O
concentration O
. O


the O
UCL B-CMT
spectra O
of O
O3Y2 B-MAT
: I-MAT
Yb I-MAT
, I-MAT
Ho I-MAT
with O
different O
particle O
sizes O
are O
investigated O
. O


the O
results O
indicate O
that O
the O
integrated B-PRO
emission I-PRO
intensity I-PRO
ratio I-PRO
of I-PRO
green I-PRO
to I-PRO
red I-PRO
( O
rgreen B-PRO
/ I-PRO
red I-PRO
) O
exhibits O
a O
gradual O
decrease O
from O
<nUm> O
to O
<nUm> O
when O
the O
particle B-PRO
size I-PRO
decreases O
from O
<nUm> O
nm O
to O
<nUm> O
nm O
, O
and O
the O
possible O
reasons O
are O
evaluated O
. O


oxidation B-PRO
behavior I-PRO
of O
obliquely B-SMT
deposited I-SMT
CoNi B-MAT
magnetic B-PRO
thin B-DSC
films I-DSC


the O
oxidation B-PRO
behavior I-PRO
of O
Co4Ni B-MAT
thin B-DSC
films I-DSC
used O
for O
magnetic B-APL
recording I-APL
was O
studied O
using O
auger B-CMT
and O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
. O


At O
<nUm> O
° O
C O
and O
under O
an O
oxygen O
pressure O
of O
<nUm> O
× O
<nUm> O
− O
<nUm> O
Torr O
cobalt B-MAT
oxidized B-SMT
to O
CoO B-MAT
but O
nickel B-MAT
remained O
in O
the O
metallic B-PRO
state I-PRO
. O


the O
growth O
of O
CoO B-MAT
followed O
a O
parabolic O
dependence O
on O
the O
oxygen O
exposure O
time O
, O
suggesting O
diffusion O
- O
controlled O
kinetics O
for O
oxidation B-SMT
. O


the O
[Co] B-MAT
/ O
[Ni] B-MAT
ratio O
at O
the O
surface B-DSC
increased O
with O
oxidation B-SMT
indicating O
an O
oxygen O
- O
induced O
segregation O
of O
cobalt B-MAT
in O
the O
alloy B-DSC
. O


comparative O
evaluation O
investigation O
of O
slag O
corrosion O
on O
Al2O3 B-MAT
and O
MgO-Al2O3 B-MAT
refractories B-APL
via O
experiments O
and O
thermodynamic B-CMT
simulations I-CMT


Al2O3- B-MAT
and O
MgO B-MAT
- O
based O
refractories B-APL
are O
widely O
used O
in O
the O
steel B-APL
industry I-APL
as O
lining B-APL
materials I-APL
for O
many O
metallurgical B-APL
reactors I-APL
. O


due O
to O
their O
direct O
contact O
with O
slag O
and O
steel B-MAT
, O
they O
suffer O
corrosion O
and O
degradation O
, O
especially O
in O
the O
slag O
- O
line O
position O
, O
which O
limits O
their O
service B-PRO
performance I-PRO
. O


the O
purpose O
of O
this O
article O
is O
to O
obtain O
a O
better O
understanding O
of O
the O
corrosion B-PRO
behavior I-PRO
of O
the O
two O
refractories B-APL
with O
different O
compositions B-PRO
of O
virtual B-APL
steelmaking I-APL
slags O
( O
wt O
% O
CaO B-MAT
/ O
wt O
% O
O2Si B-MAT
= O
<nUm> O
– O
<nUm> O
, O
Al2O3 B-MAT
: O
<nUm> O
– O
35wt O
% O
) O
using O
laboratory O
experiments O
and O
FactSage B-CMT
thermodynamic I-CMT
modeling I-CMT
. O


pure O
Al2O3 B-MAT
and O
MgO-Al2O3 B-MAT
crucibles B-APL
were O
adopted O
to O
simulate O
the O
two O
refractories B-APL
, O
respectively O
, O
during O
the O
experiment O
. O


the O
results O
show O
that O
the O
degree O
of O
corrosion O
of O
both O
crucibles B-APL
increases O
with O
an O
increase O
in O
slag O
basicity B-PRO
and O
a O
decrease O
in O
Al2O3 B-MAT
content O
in O
the O
slag O
. O


the O
Al2O3 B-MAT
crucible B-APL
is O
more O
susceptible O
to O
corrosion O
than O
the O
MgO-Al2O3 B-MAT
crucible B-APL
, O
which O
is O
attributed O
to O
the O
effect O
of O
the O
slag O
penetrating O
through O
the O
Al2O3 B-MAT
crucible B-APL
matrix O
and O
substituting O
part O
of O
its O
matrix O
. O


for O
the O
MgO-Al2O3 B-MAT
crucible B-APL
, O
there O
was O
no O
obvious O
slag O
substitution O
, O
but O
a O
transition O
layer O
was O
found O
in O
the O
contact O
region O
between O
the O
crucible B-APL
and O
the O
slag O
. O


the O
Al2O3 B-MAT
in O
the O
crucible B-APL
matrix O
reacts O
with O
slag O
to O
produce O
calcium B-MAT
alumina I-MAT
( O
Al12CaO19 B-MAT
, O
Al4CaO7 B-MAT
) O
and O
other O
complex B-MAT
oxides I-MAT
, O
while O
the O
MgO B-MAT
particles B-DSC
at O
the O
MgO-Al2O3 B-MAT
crucible B-APL
- O
slag O
interface B-DSC
were O
only O
surrounded O
by O
liquid O
slag O
without O
an O
obvious O
chemical O
reaction O
between O
them O
. O


the O
mechanism O
of O
corrosion O
was O
studied O
by O
experiments O
combined O
with O
thermodynamic B-CMT
calculations I-CMT
and O
with O
the O
establishment O
of O
a O
new O
corrosion B-CMT
model I-CMT
. O


this O
study O
is O
expected O
to O
provide O
a O
guide O
for O
the O
design O
of O
related O
refractories B-APL
and O
slags O
in O
industrial B-APL
applications I-APL
. O


oxygen B-PRO
phonons I-PRO
in O
orthorhombic B-SPL
and O
tetragonal B-SPL
Ba2CuO6Tl2 B-MAT
investigated O
by O
raman B-CMT
scattering I-CMT


the O
phonon B-PRO
spectrum I-PRO
of O
the O
Ba2CuO6Tl2 B-MAT
compound O
has O
been O
investigated O
by O
raman B-CMT
scattering I-CMT
for O
variations O
in O
the O
Tl B-MAT
and O
oxygen B-PRO
contents I-PRO
. O


we O
observe O
large O
changes O
of O
the O
vibrational B-PRO
frequencies I-PRO
and O
lineshapes B-PRO
of O
the O
apical O
oxygen O
, O
O(2) O
, O
and O
the O
oxygen O
in O
the O
double O
OTl O
layer O
, O
O(3) O
, O
for O
a O
Tl B-PRO
content I-PRO
which O
coincides O
with O
the O
orthorhombic-tetragonal B-PRO
phase I-PRO
transition I-PRO
. O


oxygen B-SMT
annealed I-SMT
samples O
( O
Tc B-PRO
≈ O
<nUm> O
K O
) O
exhibit O
slightly O
lower O
frequencies O
of O
the O
O(2) O
and O
O(3) O
modes O
than O
the O
as-sintered B-SMT
samples O
( O
Tc B-PRO
≈ O
<nUm> O
K O
) O
. O


asymmetric O
metal B-PRO
oxide B-MAT
pseudocapacitors B-APL
advanced O
by O
three B-DSC
- I-DSC
dimensional I-DSC
nanoporous I-DSC
metal B-PRO
electrodes B-APL


we O
report O
a O
novel O
O2Ru B-MAT
– O
NPG O
/ O
/ O
CoH2O2 B-MAT
– O
NPG O
asymmetric O
supercapacitor B-APL
with O
a O
high O
specific B-PRO
capacitance I-PRO
and O
a O
wide O
potential O
window O
in O
which O
bifunctional O
nanoporous B-DSC
gold B-MAT
is O
used O
as O
both O
the O
highly O
conductive B-PRO
supports O
of O
the O
pseudocapacitive B-PRO
oxides B-MAT
and O
the O
3D B-APL
current I-APL
collectors I-APL
in O
the O
device O
. O


the O
O2Ru B-MAT
– O
NPG O
and O
CoH2O2 B-MAT
– O
NPG O
electrodes B-APL
can O
reach O
specific B-PRO
capacitances I-PRO
of O
<nUm> O
F O
g-1 O
and O
<nUm> O
F O
g-1 O
, O
respectively O
, O
which O
provide O
comparatively O
high O
specific B-PRO
capacitances I-PRO
in O
relation O
to O
metal B-PRO
oxide B-MAT
/ O
carbon B-MAT
electrodes B-APL
, O
giving O
rise O
to O
an O
asymmetric O
oxide B-MAT
pseudocapacitor B-APL
with O
a O
large O
capacitance B-PRO
of O
∼ O
<nUm> O
F O
g-1 O
, O
high O
working B-PRO
voltage I-PRO
of O
<nUm> O
V O
and O
an O
ultrahigh O
energy B-PRO
density I-PRO
of O
∼ O
<nUm> O
W O
h O
kg-1 O
. O


optoelectronic B-PRO
properties I-PRO
of O
XIn2S4 B-MAT
( I-MAT
x I-MAT
= I-MAT
Cd I-MAT
, I-MAT
Mg I-MAT
) I-MAT
thiospinels B-SPL
through O
highly O
accurate O
all B-CMT
- I-CMT
electron I-CMT
FP I-CMT
- I-CMT
LAPW I-CMT
method I-CMT
coupled O
with O
modified O
approximations O


we O
report O
the O
structural B-PRO
, O
electronic B-PRO
and O
optical B-PRO
properties I-PRO
of O
the O
thiospinels B-SPL
XIn2S4 B-MAT
( I-MAT
x I-MAT
= I-MAT
Cd I-MAT
, I-MAT
Mg I-MAT
) I-MAT
, O
using O
highly O
accurate O
all B-CMT
- I-CMT
electron I-CMT
full I-CMT
potential I-CMT
linearized I-CMT
augmented I-CMT
plane I-CMT
wave I-CMT
plus I-CMT
local I-CMT
orbital I-CMT
method I-CMT
. O


In O
order O
to O
calculate O
the O
exchange B-PRO
and O
correlation B-PRO
energies I-PRO
, O
the O
method O
is O
coupled O
with O
modified O
techniques O
such O
as O
GGA+U B-CMT
and O
mBJ B-CMT
- I-CMT
GGA I-CMT
, O
which O
yield O
improved O
results O
as O
compared O
to O
the O
previous O
studies O
. O


GGA+SOC B-CMT
approximation O
is O
also O
used O
for O
the O
first O
time O
on O
these O
compounds O
to O
examine O
the O
spin B-PRO
orbit I-PRO
coupling I-PRO
effect I-PRO
on O
the O
band B-PRO
structure I-PRO
. O


from O
the O
analysis O
of O
the O
structural B-PRO
parameters I-PRO
, O
robust O
character O
is O
predicted O
for O
both O
materials O
. O


energy B-PRO
band I-PRO
structures I-PRO
profiles O
are O
fairly O
the O
same O
for O
GGA B-CMT
, O
GGA+SOC B-CMT
, O
GGA+U B-CMT
and O
mBJ B-CMT
- I-CMT
GGA I-CMT
, O
confirming O
the O
indirect B-PRO
and O
direct B-PRO
band I-PRO
gap I-PRO
nature O
of O
CdIn2S4 B-MAT
and O
In2MgS4 B-MAT
materials O
, O
respectively O
. O


we O
report O
the O
trend O
of O
band B-PRO
gap I-PRO
results O
as O
: O
( O
mBJ B-CMT
- I-CMT
GGA I-CMT
) O
> O
( O
GGA+U B-CMT
) O
> O
( O
GGA B-CMT
) O
> O
( O
GGA+SOC B-CMT
) O
. O


localized O
regions O
appearing O
in O
the O
valence O
bands O
for O
CdIn2S4 B-MAT
tend O
to O
split O
up O
nearly O
by O
≈ O
1eV O
in O
the O
case O
of O
GGA+SOC B-CMT
. O


many O
new O
physical B-PRO
parameters I-PRO
are O
reported O
that O
can O
be O
important O
for O
the O
fabrication O
of O
optoelectronic B-APL
devices I-APL
. O


optical B-PRO
spectra I-PRO
namely O
, O
dielectric B-PRO
function I-PRO
( O
DF B-PRO
) O
, O
refractive B-PRO
index I-PRO
n(o) I-PRO
, O
extinction B-PRO
coefficient I-PRO
k(o) I-PRO
, O
reflectivity B-PRO
r(o) I-PRO
, O
optical B-PRO
conductivity I-PRO
s(o) I-PRO
, O
absorption B-PRO
coefficient I-PRO
a(o) I-PRO
and O
electron B-PRO
loss I-PRO
function I-PRO
are O
discussed O
. O


optical B-PRO
's I-PRO
absorption I-PRO
edge I-PRO
is O
noted O
to O
be O
<nUm> O
and O
<nUm> O
for O
CdIn2S4 B-MAT
and O
In2MgS4 B-MAT
, O
respectively O
. O


the O
prominent O
peaks O
in O
the O
electron B-PRO
energy I-PRO
spectrum I-PRO
situated O
between O
15eV O
and O
23eV O
for O
the O
herein O
studied O
materials O
indicate O
a O
transition O
from O
metallic B-PRO
to O
the O
dielectric B-PRO
character I-PRO
. O


infrared B-CMT
absorption I-CMT
studies O
on O
the O
superionic B-PRO
conductor I-PRO
OZr B-MAT
2-Y I-MAT
<nUm> I-MAT
O I-MAT
<nUm> I-MAT
crystal B-DSC


infrared B-CMT
absorption I-CMT
spectra O
of O
(1-x)ZrO2-xYO1.5 B-MAT
, O
which O
is O
one O
of O
the O
superionic B-PRO
conductors I-PRO
, O
have O
been O
studied O
using O
thin B-DSC
films I-DSC
evaporated O
on O
Si B-MAT
plates B-DSC
. O


from O
absorption B-CMT
spectra O
obtained O
at O
normal O
incidence O
and O
at O
oblique O
incidence O
it O
is O
shown O
that O
ZrO2-Y2O3 B-MAT
crystals B-DSC
have O
well O
- O
defined O
TO O
and O
LO B-PRO
infrared I-PRO
active I-PRO
phonons I-PRO
, O
though O
they O
have O
many O
defects O
. O


from O
the O
analysis O
of O
the O
spectra O
, O
x-dependences O
of O
the O
force B-PRO
constant I-PRO
and O
the O
effective B-PRO
charge I-PRO
are O
obtained O
, O
and O
it O
is O
found O
that O
the O
concept O
of O
the O
virtual B-CMT
ion I-CMT
crystal I-CMT
model I-CMT
is O
very O
useful O
to O
understand O
the O
infrared B-PRO
properties I-PRO
of O
the O
superionic B-PRO
conductor I-PRO
ZrO2-Y2O3 B-MAT
crystal B-DSC
. O


effect O
of O
antiferroelectric B-PRO
buffer B-DSC
on O
electric B-PRO
fatigue I-PRO
and O
leakage B-PRO
in O
ferroelectric B-PRO
Pb(Zr,Sn,Ti)NbO3 B-MAT
thin B-DSC
films I-DSC


an O
antiferroelectic B-PRO
buffer B-DSC
was O
introduced O
into O
the O
ferroelectric B-APL
capacitors I-APL
by O
modifying O
the O
composition B-PRO
of O
ferroelectric B-PRO
surfaces B-DSC
to O
minimize O
fatigue B-PRO
in O
the O
conventional O
Pb(Zr,Ti)O3 B-MAT
(PZT)-based I-MAT
materials O
with O
Pt B-MAT
electrode B-APL
. O


the O
Pb(Zr,Sn,Ti)NbO3 B-MAT
( O
PZSTN B-MAT
) O
was O
used O
as O
antiferroelectric B-PRO
/ O
ferroelectric B-PRO
multilayered B-DSC
thin I-DSC
films I-DSC
because O
the O
PZSTN B-MAT
has O
similar O
lattice B-PRO
parameters I-PRO
and O
microstructures B-PRO
between O
the O
antiferroelectric B-PRO
and O
ferroelectric B-PRO
compositions I-PRO
. O


the O
antiferroelectric B-PRO
( O
<nUm> O
layer B-DSC
) O
/ O
ferroelectric(5 B-PRO
layers B-DSC
) O
/ O
antiferroelectric(1 B-PRO
layer B-DSC
) O
films B-DSC
showed O
nearly O
no O
fatigue B-PRO
and O
leakage B-PRO
after O
<nUm> O
cycles O
of O
± O
<nUm> O
V O
square O
pulse O
remaining O
more O
than O
<nUm> O
mC O
/ O
cm2 O
of O
the O
switchable O
polarization B-PRO
, O
while O
the O
ferroelectric B-PRO
PZSTN B-MAT
( O
<nUm> O
layers O
) O
films B-DSC
without O
antiferroelectric B-PRO
layers B-DSC
showed O
fatigue B-PRO
and O
significant O
increase O
of O
leakage B-PRO
current I-PRO
after O
<nUm> O
cycles O
. O


excellent O
fatigue B-PRO
and O
leakage B-PRO
properties I-PRO
of O
the O
antiferroelectric B-PRO
/ O
ferroelectric B-PRO
/ O
antiferroelectric B-PRO
PZSTN B-MAT
films B-DSC
should O
be O
attributed O
to O
the O
antiferroelectric B-PRO
buffer B-DSC
having O
small O
stresses B-PRO
during O
<nUm> O
° O
domain B-PRO
switching O
. O


diffusion O
and O
clustering O
in O
the O
cd1-x B-MAT
Bi I-MAT
x I-MAT
F I-MAT
2+x I-MAT
solid B-DSC
solution I-DSC
: O
A O
fluorine B-CMT
NMR I-CMT
study O


an O
investigation O
has O
been O
carried O
out O
by O
19F B-CMT
NMR I-CMT
on O
the O
Cd1-xBixF2+x B-MAT
solid B-DSC
solution I-DSC
which O
is O
a O
fast O
fluorine B-PRO
ion I-PRO
conductor I-PRO
. O


the O
results O
are O
interpreted O
on O
hand O
of O
the O
existence O
of O
different O
fluoride O
sublattices O
and O
exchanges O
between O
them O
at O
rising O
temperature O
. O


the O
diffusive O
character O
of O
the O
mobile O
F- O
ions O
motion O
is O
shown O
above O
T O
⋍ O
<nUm> O
K O
. O


the O
NMR B-CMT
study O
has O
allowed O
to O
justify O
the O
hypothesis O
of O
the O
formation O
of O
clusters B-DSC
of O
<nUm> O
: O
<nUm> O
: O
<nUm> O
type O
in O
Cd1-xBixF2+x B-MAT
. O


improvement O
with O
increasing O
x O
of O
the O
electrical B-PRO
conductivity I-PRO
above O
x O
⋍ O
<nUm> O
may O
result O
mainly O
from O
the O
higher O
number O
of O
<nUm> O
: O
<nUm> O
: O
<nUm> O
clusters B-DSC
and O
consequently O
from O
that O
of O
the O
mobile O
anions O
. O


structural B-PRO
and O
optical B-PRO
studies O
of O
CdSeZn B-MAT
/ O
SeZn B-MAT
/ O
MgSSeZn B-MAT
separate O
confinement O
heterostructures B-DSC
with O
different O
buffer B-DSC
layers I-DSC
grown O
by O
molecular B-SMT
beam I-SMT
epitaxy I-SMT


A O
great O
improvement O
of O
optical B-PRO
quality I-PRO
was O
observed O
from O
a O
CdSeZn B-MAT
/ O
SeZn B-MAT
/ O
MgSSeZn B-MAT
single B-APL
quantum I-APL
well I-APL
separate O
- O
confinement O
heterostructure B-DSC
grown O
on O
AsGa B-MAT
substrate B-DSC
with O
SeZn B-MAT
/ O
CdSeZn B-MAT
strained B-APL
- I-APL
layer I-APL
superlattices I-APL
( O
SLS B-APL
) O
buffer B-DSC
layers I-DSC
by O
molecular B-SMT
beam I-SMT
epitaxy I-SMT
. O


transmission B-CMT
electron I-CMT
microscopy I-CMT
images O
showed O
that O
a O
pitted B-DSC
surface I-DSC
was O
generally O
formed O
after O
the O
desorption O
of O
AsGa B-MAT
substrate B-DSC
in O
a O
II O
– O
VI O
chamber O
. O


however O
, O
this O
pitted O
surface B-DSC
was O
smoothed O
out O
by O
the O
growth O
of O
SLS B-APL
buffer B-DSC
layer I-DSC
. O


near O
room O
temperature O
photoluminescence B-CMT
indicated O
that O
the O
carrier B-PRO
collection I-PRO
efficiency I-PRO
of O
quantum B-APL
wells I-APL
in O
the O
sample O
with O
SLS B-APL
buffer B-DSC
layer I-DSC
is O
better O
than O
the O
sample O
only O
with O
a O
SeZn B-MAT
buffer B-DSC
layer I-DSC
. O


effects O
of O
Ho2O3 B-MAT
addition O
on O
defects B-PRO
of O
BaO3Ti B-MAT


effects O
of O
Ho2O3 B-MAT
addition O
on O
defects B-PRO
of O
BaO3Ti B-MAT
ceramic B-DSC
have O
been O
studied O
in O
terms O
of O
electrical B-PRO
conductivity I-PRO
at O
<nUm> O
° O
C O
as O
a O
function O
of O
oxygen O
partial O
pressure O
( O
P O
O O
<nUm> O
° O
) O
and O
oxygen B-PRO
vacancy I-PRO
concentration I-PRO
. O


the O
substitution O
of O
ho3+ O
for O
the O
Ti B-MAT
site O
in O
Ba(Ti1-xHox)O3-0.5x B-MAT
resulted O
in O
a O
significant O
shift O
of O
conductivity B-PRO
minimum O
toward O
lower O
oxygen O
pressures O
and O
showed O
an O
acceptor B-PRO
- I-PRO
doped I-PRO
behavior I-PRO
. O


the O
solubility B-PRO
limit I-PRO
of I-PRO
Ho I-PRO
on I-PRO
Ti I-PRO
sites O
was O
confirmed O
less O
than O
<nUm> O
mol O
% O
by O
measuring O
the O
electrical B-PRO
conductivity I-PRO
and O
the O
lattice B-PRO
constant I-PRO
. O


oxygen B-PRO
vacancy I-PRO
concentrations I-PRO
were O
calculated O
from O
the O
positions O
of O
P O
O O
<nUm> O
° O
in O
the O
conductivity B-PRO
minima O
and O
were O
in O
good O
agreement O
with O
theoretically O
estimated O
values O
within O
the O
solubility B-PRO
limit I-PRO
. O


the O
curie B-PRO
point I-PRO
moved O
to O
lower O
temperatures O
with O
increasing O
the O
oxygen B-PRO
vacancy I-PRO
concentration I-PRO
and O
Ho B-PRO
contents I-PRO
. O


magnetic B-PRO
properties I-PRO
of O
monoclinic B-SPL
lanthanide B-MAT
orthoborates I-MAT
, O
LnBO3 B-MAT
, I-MAT
ln I-MAT
= I-MAT
Gd I-MAT
, I-MAT
Tb I-MAT
, I-MAT
Dy I-MAT
, I-MAT
Ho I-MAT
, I-MAT
Er I-MAT
, I-MAT
Yb I-MAT


the O
lanthanide B-MAT
orthoborates I-MAT
, O
LnBO3 B-MAT
, I-MAT
ln I-MAT
= I-MAT
Gd I-MAT
, I-MAT
Tb I-MAT
, I-MAT
Dy I-MAT
, I-MAT
Ho I-MAT
, I-MAT
Er I-MAT
, I-MAT
Yb I-MAT
crystallise O
in O
a O
monoclinic B-SPL
structure B-PRO
with O
the O
magnetic B-PRO
ln3+ O
forming O
an O
edge O
- O
sharing O
triangular O
lattice O
. O


the O
triangles O
are O
scalene O
, O
however O
all O
deviations O
from O
the O
ideal O
equilateral O
geometry O
are O
less O
than O
<nUm> O
% O
. O


the O
bulk B-DSC
magnetic B-PRO
properties I-PRO
are O
studied O
using O
magnetic B-PRO
susceptibility I-PRO
, O
specific B-PRO
heat I-PRO
and O
isothermal B-CMT
magnetisation I-CMT
measurements I-CMT
. O


heat B-PRO
capacity I-PRO
measurements O
show O
ordering B-PRO
features O
at O
T O
≤ O
2K O
for O
ln O
= O
Gd B-MAT
, O
Tb B-MAT
, O
Dy B-MAT
, O
Er B-MAT
. O


No O
ordering B-PRO
is O
observed O
for O
BO3Yb B-MAT
at O
T O
≥ O
0.4K O
and O
BHoO3 B-MAT
is O
proposed O
to O
have O
a O
non-magnetic B-PRO
singlet I-PRO
state I-PRO
. O


isothermal B-CMT
magnetisation I-CMT
measurements I-CMT
indicate O
isotropic O
gd3+ B-PRO
spins I-PRO
and O
strong O
single B-PRO
- I-PRO
ion I-PRO
anisotropy I-PRO
for O
the O
other O
ln3+ O
. O


the O
change O
in O
magnetic B-PRO
entropy I-PRO
has O
been O
evaluated O
to O
determine O
the O
magnetocaloric B-PRO
effect I-PRO
in O
these O
materials O
. O


BGdO3 B-MAT
and O
BDyO3 B-MAT
are O
found O
to O
be O
competitive O
magnetocaloric B-PRO
materials O
in O
the O
liquid O
helium O
temperature O
regime O
. O


novel O
deposition O
method O
of O
anti-reflective B-APL
coating I-APL
for O
spherical O
silicon B-MAT
solar B-APL
cells I-APL


the O
liquid B-SMT
- I-SMT
phase I-SMT
deposition I-SMT
( O
LPD B-SMT
) O
as O
a O
novel O
deposition O
method O
of O
anti-reflective B-APL
coating I-APL
( O
ARC B-APL
) O
for O
spherical O
silicon B-MAT
solar B-APL
cells I-APL
has O
been O
proposed O
. O


the O
LPD B-SMT
is O
a O
growth O
method O
in O
aqueous O
solution O
and O
can O
deposit O
thin B-DSC
films I-DSC
with O
uniform O
coverage O
over O
a O
spherical O
surface B-DSC
. O


the O
solar B-APL
cell I-APL
performance O
of O
the O
spherical O
silicon B-MAT
solar B-APL
cell I-APL
with O
an O
ARC B-APL
shows O
more O
than O
<nUm> O
% O
increase O
in O
short B-PRO
- I-PRO
circuit I-PRO
current I-PRO
density I-PRO
compared O
to O
that O
without O
an O
ARC B-APL
. O


the O
result O
confirms O
that O
the O
LPD B-SMT
method O
is O
useful O
for O
ARC B-APL
fabrications O
of O
spherical O
silicon B-MAT
solar B-APL
cells I-APL
. O


growth O
of O
fayalite B-MAT
( O
Fe2O4Si B-MAT
) O
single B-DSC
crystals I-DSC
by O
the O
floating B-SMT
- I-SMT
zone I-SMT
method I-SMT


single B-DSC
crystals I-DSC
of O
fayalite B-MAT
( O
Fe2O4Si B-MAT
) O
have O
been O
prepared O
by O
the O
floating B-SMT
- I-SMT
zone I-SMT
method I-SMT
using O
a O
lamp B-SMT
- I-SMT
image I-SMT
furnace I-SMT
, O
under O
an O
atmosphere O
with O
controlled O
oxygen O
fugacity O
. O


the O
growth O
axes O
were O
<100>  O
, O
<010>  O
and O
<001>  O
. O


the O
crystals B-DSC
are O
typically O
<nUm> O
– O
<nUm> O
mm O
in O
diameter O
and O
<nUm> O
– O
<nUm> O
mm O
long O
. O


chemical B-CMT
analysis I-CMT
shows O
that O
the O
crystal B-PRO
composition I-PRO
is O
very O
close O
to O
stoichiometric B-DSC
. O


the O
bulk B-DSC
density B-PRO
is O
<nUm> O
g O
/ O
cm3 O
, O
in O
good O
agreement O
with O
the O
x-ray B-CMT
density B-PRO
, O
<nUm> O
g O
/ O
cm3 O
. O


the O
relation O
between O
the O
growth O
conditions O
and O
the O
phase O
equilibria O
is O
discussed O
. O


phase B-PRO
composition I-PRO
, O
structure B-PRO
and O
magnetic B-PRO
behaviour I-PRO
of O
low O
neodymium B-MAT
rapid B-SMT
- I-SMT
quenched I-SMT
Nd B-MAT
– I-MAT
Fe I-MAT
– I-MAT
B I-MAT
alloys B-DSC


phase B-PRO
composition I-PRO
, O
structure B-PRO
and O
magnetic B-PRO
behaviour I-PRO
of O
two O
low O
neodymium B-MAT
rapid B-SMT
- I-SMT
quenched I-SMT
( O
r B-SMT
/ I-SMT
q I-SMT
) O
Nd B-MAT
– I-MAT
Fe I-MAT
– I-MAT
B I-MAT
alloys B-DSC
differing O
in O
way O
of O
preparation O
, O
centrifugal B-SMT
atomization I-SMT
and O
melt B-SMT
spinning I-SMT
, O
were O
studied O
and O
compared O
using O
mossbauer B-CMT
spectroscopy I-CMT
( O
MS B-CMT
) O
, O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
thermomagnetic B-CMT
analysis I-CMT
( O
TM B-CMT
) O
and O
SQUID B-CMT
magnetic I-CMT
measurements I-CMT
. O


better O
hard B-PRO
magnetic I-PRO
characteristics I-PRO
of O
the O
melt B-SMT
- I-SMT
spun I-SMT
material O
are O
explained O
on O
the O
basis O
of O
the O
differences O
in O
content O
of O
surface B-DSC
and O
/ O
or O
interface B-DSC
Fe(Nd,B) B-MAT
phases O
. O


their O
significant O
presence O
in O
the O
centrifugally B-SMT
atomized I-SMT
material O
lowers O
the O
content O
of O
BFe3 B-MAT
, O
BFe2 B-MAT
, O
a-Fe B-MAT
, O
and O
BFe14Nd2 B-MAT
phases O
that O
are O
responsible O
for O
the O
magnetic B-PRO
qualities I-PRO
of O
the O
material O
. O


there O
are O
just O
subtle O
differences O
in O
the O
phase B-PRO
composition I-PRO
of O
both O
materials O
after O
thermomagnetic B-CMT
measurement I-CMT
, O
where O
the O
a-Fe B-MAT
phase O
prevails O
as O
a O
product O
of O
thermal B-SMT
decomposition I-SMT
. O


the O
crystal B-PRO
structure I-PRO
of O
H53In100La100Pt100 B-MAT


InLaPt B-MAT
was O
attempted O
hydrogenated B-SMT
at O
a O
hydrogen O
pressure O
of O
182bar O
and O
temperatures O
from O
room O
temperature O
to O
673K O
. O


the O
crystal B-PRO
structure I-PRO
of O
the O
resulting O
H53In100La100Pt100 B-MAT
hydride I-MAT
was O
determined O
from O
powder B-CMT
neutron I-CMT
diffraction I-CMT
data O
. O


the O
structure B-PRO
was O
indexed O
on O
an O
expanded O
InLaPt B-MAT
intermetallic B-PRO
unit I-PRO
cell I-PRO
with O
space O
group O
P B-SPL
<nUm> I-SPL
¯ I-SPL
<nUm> I-SPL
m I-SPL
and O
dimensions O
a B-PRO
= O
<nUm> O
Å O
and O
c B-PRO
= O
<nUm> O
Å O
. O


hydrogen O
occupies O
tetrahedral O
4h O
sites O
in O
such O
a O
way O
that O
tetrahedral O
voids O
sharing O
a O
common O
face O
are O
not O
simultaneously O
populated O
. O


the O
result O
could O
not O
support O
previous O
density B-CMT
- I-CMT
functional I-CMT
theory I-CMT
calculations I-CMT
regarding O
the O
hydrogen B-PRO
absorption I-PRO
capacity I-PRO
of O
InLaPt B-MAT
[ O
P. O
ravindran O
, O
P. O
vajeeston O
, O
R. O
vidya O
, O
A. O
kjekshus O
, O
H. O
fjellvag O
, O
phys. O
rev. O
lett. O
<nUm> O
( O
<nUm> O
) O
<nUm> O
] O
. O


microstructure B-PRO
and O
hydrothermal B-PRO
corrosion I-PRO
behavior I-PRO
of O
NITE B-SMT
- O
CSi B-MAT
with O
various O
sintering B-SMT
additives O
in O
LWR B-APL
coolant O
environments O


nano-infiltration B-SMT
and I-SMT
transient I-SMT
eutectic I-SMT
phase I-SMT
( I-SMT
NITE I-SMT
) I-SMT
sintering I-SMT
was O
developed O
for O
fabrication O
of O
nuclear O
grade O
CSi B-MAT
composites B-DSC
. O


we O
produced O
monolithic B-DSC
CSi B-MAT
ceramics B-DSC
using O
NITE B-SMT
sintering I-SMT
, O
as O
candidates O
for O
accident B-APL
- I-APL
tolerant I-APL
fuels I-APL
in O
light B-APL
- I-APL
water I-APL
reactors I-APL
( O
LWRs B-APL
) O
. O


In O
this O
work O
, O
we O
exposed O
three O
different O
NITE B-SMT
chemistries O
( O
yttria B-MAT
- I-MAT
alumina I-MAT
[YA] I-MAT
, O
ceria-zirconia-alumina B-MAT
[CZA] I-MAT
, O
and O
yttria-zirconia-alumina B-MAT
[YZA] I-MAT
) O
to O
autoclave O
conditions O
simulating O
LWR B-APL
coolant I-APL
loops I-APL
. O


the O
YZA B-MAT
was O
most O
corrosion B-PRO
resistant I-PRO
, O
followed O
by O
CZA B-MAT
, O
with O
YA B-MAT
being O
worst O
. O


high B-CMT
- I-CMT
resolution I-CMT
elemental I-CMT
analysis I-CMT
using O
scanning B-CMT
transmission I-CMT
electron I-CMT
microscopy I-CMT
( O
STEM B-CMT
) O
x-ray B-CMT
mapping I-CMT
combined O
with O
multivariate B-CMT
statistical I-CMT
analysis I-CMT
( O
MVSA B-CMT
) O
datamining O
helped O
explain O
the O
differences O
in O
corrosion O
. O


YA B-MAT
- O
NITE B-SMT
lost O
all O
Al B-MAT
from O
the O
corroded O
region O
and O
the O
ytttria B-MAT
reformed O
into O
blocky B-DSC
precipitates I-DSC
. O


the O
CZA B-MAT
material O
lost O
all O
Al B-MAT
from O
the O
corroded O
area O
, O
and O
the O
YZA B-MAT
− O
which O
suffered O
the O
least O
corrosion O
-retained O
some O
Al B-MAT
in O
the O
corroded O
region O
. O


the O
results O
indicate O
that O
the O
YZA B-MAT
- O
NITE B-SMT
CSi B-MAT
is O
most O
resistant O
to O
hydrothermal O
corrosion O
in O
the O
LWR B-APL
environment O
. O


low O
- O
temperature O
phase O
formation O
of O
Sn-Doped B-MAT
LaMnO3+d I-MAT
perovskite B-SPL


the O
incorporation O
of O
Sn B-MAT
into O
LaMnO3 B-MAT
perovskite B-SPL
and O
its O
influence O
on O
magnetotransport B-PRO
properties I-PRO
were O
studied O
in O
samples O
synthesized O
at O
low O
temperature O
. O


single B-DSC
- I-DSC
phase I-DSC
materials O
for O
two O
series O
of O
samples O
with O
La B-PRO
/ I-PRO
( I-PRO
Sn+Mn I-PRO
) I-PRO
= O
<nUm> O
and O
La B-PRO
/ I-PRO
( I-PRO
Sn+Mn I-PRO
) I-PRO
< O
<nUm> O
ratios O
were O
obtained O
by O
substitution O
of O
up O
to O
<nUm> O
% O
of O
the O
Mn B-MAT
ions O
by O
sn4+ O
. O


the O
effect O
of O
Sn B-MAT
substitution O
was O
monitored O
through O
measurements O
of O
thermal O
, O
“ O
M(T) O
” O
, O
and O
magnetic O
field O
, O
“ O
M(H) O
” O
, O
dependences O
of O
magnetization B-PRO
, O
as O
well O
as O
of O
resistivity B-PRO
, O
“ O
r(T) B-PRO
” O
, O
at O
<nUm> O
and O
<nUm> O
kOe O
. O


these O
showed O
that O
this O
effect O
depends O
strongly O
on O
the O
perovskite B-SPL
cation B-PRO
site I-PRO
ratio I-PRO
( O
A B-PRO
/ I-PRO
B I-PRO
) O
. O


for O
La B-PRO
/ I-PRO
( I-PRO
Sn+Mn I-PRO
) I-PRO
= O
<nUm> O
, O
m B-PRO
and O
TC B-PRO
were O
depressed O
as O
Sn B-PRO
content I-PRO
was O
increased O
. O


the O
magnetization B-PRO
data O
suggest O
the O
presence O
of O
magnetic B-PRO
clusters I-PRO
with O
superparamagnetic B-PRO
behavior I-PRO
. O


No O
evidence O
of O
magnetoresistance B-PRO
( O
MR B-PRO
) O
was O
found O
. O


for O
La B-PRO
/ I-PRO
( I-PRO
Sn+Mn I-PRO
) I-PRO
< O
<nUm> O
ratio O
, O
the O
samples O
showed O
ferromagnetic B-PRO
behavior I-PRO
and O
MR B-PRO
and O
both O
m B-PRO
and O
TC B-PRO
raised O
as O
Sn B-MAT
content O
increased O
. O


the O
results O
are O
discussed O
in O
terms O
of O
A B-PRO
site I-PRO
vacancies I-PRO
. O


the O
influence O
of O
oxygen O
in O
AlOTi B-MAT
x I-MAT
N I-MAT
y I-MAT
on O
the O
optical B-PRO
properties I-PRO
of O
colored B-APL
solar I-APL
- I-APL
absorbing I-APL
coatings I-APL


low O
cost O
and O
ease O
of O
fabrication O
are O
important O
factors O
for O
solar B-APL
- I-APL
thermal I-APL
applications I-APL
in O
energy B-APL
- I-APL
efficient I-APL
buildings I-APL
. O


this O
contribution O
reports O
the O
influence O
of O
oxygen O
on O
structure B-PRO
, O
optical B-PRO
properties I-PRO
and O
chromaticity B-PRO
of O
TiAlOxNy B-MAT
thin B-DSC
films I-DSC
prepared O
by O
DC B-SMT
magnetron I-SMT
sputtering I-SMT
. O


it O
is O
an O
extension O
of O
a O
previous O
study O
on O
colored B-APL
solar I-APL
- I-APL
thermal I-APL
absorbers I-APL
based O
on O
titanium B-MAT
– I-MAT
aluminum I-MAT
nitride I-MAT
. O


the O
purpose O
is O
to O
investigate O
the O
possibility O
of O
using O
TiAlOxNy B-MAT
as O
middle O
layer O
to O
achieve O
a O
gradient O
effect O
. O


the O
results O
reveal O
that O
the O
structure B-PRO
and O
optical B-PRO
properties I-PRO
of O
the O
TiAlOxNy B-MAT
coatings B-APL
are O
sensitive O
to O
the O
oxygen O
content O
under O
certain O
sputtering B-SMT
conditions O
. O


the O
ratio O
of O
oxygen O
/ O
nitrogen O
of O
<nUm> O
: O
<nUm> O
is O
the O
most O
appropriate O
to O
form O
the O
crystalline B-PRO
structure I-PRO
of O
AlNOTi B-MAT
. O


the O
optical B-PRO
constants I-PRO
of O
AlNTi B-MAT
and O
AlNOTi B-MAT
were O
deduced O
by O
fitting O
the O
experimental O
data O
. O


it O
shows O
that O
both O
the O
refractive B-PRO
index I-PRO
( O
n B-PRO
) O
and O
the O
extinction B-PRO
coefficient I-PRO
( O
κ B-PRO
) O
are O
decreased O
when O
oxygen O
is O
introduced O
to O
form O
titanium B-MAT
– I-MAT
aluminum I-MAT
nitro-oxide I-MAT
. O


the O
gradient B-PRO
effect I-PRO
can O
be O
achieved O
and O
controlled O
by O
adjusting O
the O
ratio O
of O
oxygen O
/ O
nitrogen O
flow O
during O
the O
process O
to O
enhance O
solar B-PRO
absorptance I-PRO
while O
keeping O
the O
desired O
color B-PRO
appearance I-PRO
. O


dielectric B-PRO
properties I-PRO
and O
conductivity B-PRO
in O
CuO B-MAT
and O
MoO3 B-MAT
doped B-DSC
borophosphate B-MAT
glasses B-DSC


A O
novel O
set O
of O
glasses B-DSC
of O
the O
type O
B2O3 B-MAT
– I-MAT
O5P2 I-MAT
– I-MAT
(CuO)0.50-x I-MAT
– I-MAT
(MoO3)x I-MAT
, I-MAT
<nUm> I-MAT
≤ I-MAT
x I-MAT
≥ I-MAT
<nUm> I-MAT
, O
have O
been O
investigated O
for O
dielectric B-PRO
properties I-PRO
in O
the O
frequency O
range O
<nUm> O
Hz O
– O
100kHz O
and O
temperature O
range O
<nUm> O
– O
575K O
. O


from O
the O
total B-PRO
conductivity I-PRO
derived O
from O
the O
dielectric B-PRO
spectrum I-PRO
the O
frequency B-PRO
exponent I-PRO
, O
s B-PRO
, O
and O
dc B-PRO
and O
ac B-PRO
components I-PRO
of O
the O
conductivity B-PRO
were O
determined O
. O


the O
temperature O
dependence O
of O
dc B-PRO
and O
ac B-PRO
conductivities I-PRO
at O
different O
frequencies O
was O
analyzed O
using O
mott B-CMT
's I-CMT
small I-CMT
polaron I-CMT
hopping I-CMT
model I-CMT
, O
and O
the O
high O
temperature O
activation B-PRO
energies I-PRO
have O
been O
estimated O
and O
discussed O
. O


the O
observed O
initial O
decrease O
in O
conductivity B-PRO
( O
ac B-PRO
and O
dc B-PRO
) O
and O
increase O
in O
activation B-PRO
energy I-PRO
with O
the O
addition O
of O
MoO3 B-MAT
have O
been O
understood O
to O
be O
due O
to O
the O
hindrance O
offered O
by O
the O
mo+ O
ions O
to O
the O
electronic O
motions O
. O


the O
observed O
peak O
- O
like O
behavior O
in O
conductivity B-PRO
( O
dip O
- O
like O
behavior O
in O
activation B-PRO
energy I-PRO
) O
in O
the O
composition B-PRO
range O
<nUm> O
– O
<nUm> O
mol O
fractions O
of O
MoO3 B-MAT
may O
be O
due O
to O
mixed O
transition O
effect O
occurring O
in O
the O
present O
glasses B-DSC
. O


the O
temperature O
dependence O
of O
frequency B-PRO
exponent I-PRO
, O
s B-PRO
, O
has O
been O
analyzed O
using O
different O
theoretical O
models O
. O


it O
is O
for O
the O
first O
time O
that O
the O
mixed O
transition O
metal O
ion O
( O
TMI O
) O
doped B-DSC
borophosphate B-MAT
glasses B-DSC
have O
been O
investigated O
for O
dielectric B-PRO
properties I-PRO
and O
conductivity B-PRO
over O
wide O
temperature O
and O
frequency O
ranges O
and O
the O
data O
have O
been O
subjected O
to O
a O
thorough O
analysis O
. O


liquid B-SMT
phase I-SMT
epitaxy I-SMT
( O
LPE B-SMT
) O
of O
GaN B-MAT
on O
c- O
and O
r-faces O
of O
AlN B-MAT
substrates B-DSC


the O
direct O
growth O
of O
GaN B-MAT
by O
liquid B-SMT
phase I-SMT
epitaxy I-SMT
( O
LPE B-SMT
) O
on O
different O
AlN B-MAT
substrate B-DSC
orientations O
is O
demonstrated O
for O
the O
first O
time O
. O


the O
objective O
of O
this O
work O
was O
to O
study O
the O
seeding B-PRO
behaviour I-PRO
and O
morphology B-PRO
of O
GaN B-MAT
grown O
on O
different O
crystallographic B-PRO
orientations I-PRO
of O
the O
AlN B-MAT
substrate B-DSC
. O


furthermore O
the O
incorporation O
of O
solvents O
and O
impurities O
in O
the O
epitaxial O
GaN B-MAT
was O
analysed O
. O


the O
surface B-SMT
treatment I-SMT
of O
the O
AlN B-MAT
- O
substrates B-DSC
before O
epitaxial O
growth O
turned O
out O
to O
be O
a O
challenging O
process O
, O
due O
to O
the O
fact O
, O
that O
polishing B-SMT
of O
the O
substrates B-DSC
is O
not O
yet O
developed O
in O
sufficient O
quality O
. O


therefore O
, O
the O
aspect O
of O
surface B-SMT
treatment I-SMT
is O
addressed O
in O
brief O
. O


it O
was O
found O
that O
the O
growth O
of O
completely O
closed O
layers B-DSC
of O
GaN B-MAT
on O
Al B-MAT
- O
polar O
c-facets O
appears O
to O
be O
quite O
difficult O
compared O
to O
the O
formation O
of O
closed O
layers B-DSC
on O
n-polar O
c- O
and O
on O
r-facets O
. O


the O
growth O
of O
a O
closed O
GaN B-MAT
layer B-DSC
on O
single B-DSC
crystalline I-DSC
r-plane O
AlN B-MAT
substrates B-DSC
using O
the O
LPE B-SMT
technique O
could O
also O
be O
demonstrated O
. O


characterisation O
by O
cathodoluminscence B-CMT
spectroscopy I-CMT
indicates O
that O
aluminium B-MAT
is O
incorporated O
with O
different O
content O
depending O
on O
the O
orientation O
. O


enhanced O
conversion B-PRO
efficiency I-PRO
in O
nanocrystalline B-DSC
solar B-APL
cells I-APL
using O
optically B-PRO
functional I-PRO
patterns O


the O
lower O
conversion B-PRO
efficiency I-PRO
of O
nanocrystalline B-DSC
silicon B-MAT
( O
nc B-DSC
- O
Si B-MAT
: I-MAT
H I-MAT
) O
solar B-APL
cells I-APL
is O
a O
result O
of O
its O
lower O
photon B-PRO
absorption I-PRO
capability I-PRO
of O
nc B-DSC
- O
Si B-MAT
: I-MAT
H I-MAT
. O


to O
increase O
photon B-PRO
absorption I-PRO
of O
nc B-DSC
- O
Si B-MAT
: I-MAT
H I-MAT
, O
the O
Ag B-MAT
substrates B-DSC
were O
fabricated O
with O
optically B-PRO
functional I-PRO
patterns O
. O


two O
types O
of O
patterns O
, O
with O
random O
and O
regular O
structures O
, O
were O
formed O
by O
direct B-SMT
imprint I-SMT
technology I-SMT
. O


owing O
to O
these O
optically B-PRO
functional I-PRO
patterns O
, O
the O
scattering O
of O
reflected O
light O
at O
the O
surface B-DSC
of O
the O
patterned B-DSC
Ag B-MAT
was O
enhanced O
and O
the O
optical B-PRO
path I-PRO
became O
longer O
. O


thus O
, O
a O
greater O
amount O
of O
photons O
was O
absorbed O
by O
the O
nc B-DSC
- O
Si B-MAT
: I-MAT
H I-MAT
layer B-DSC
. O


compared O
to O
flat O
Ag B-MAT
( O
without O
a O
surface B-PRO
pattern I-PRO
) O
, O
the O
light B-PRO
absorption I-PRO
value O
of O
the O
nc B-DSC
- O
Si B-MAT
: I-MAT
H I-MAT
layer B-DSC
with O
a O
random O
structure O
pattern O
was O
increased O
at O
wavelengths O
ranging O
from O
<nUm> O
to O
<nUm> O
nm O
. O


In O
the O
case O
of O
the O
regular O
patterned O
Ag B-MAT
, O
the O
light B-PRO
absorption I-PRO
value I-PRO
of O
the O
nc B-DSC
- O
Si B-MAT
: I-MAT
H I-MAT
layer B-DSC
was O
higher O
than O
the O
flat O
Ag B-MAT
at O
<nUm> O
to O
<nUm> O
nm O
. O


subsequently O
, O
nc B-DSC
- O
Si B-MAT
: I-MAT
H I-MAT
solar B-APL
cells I-APL
constructed O
on O
the O
optically B-PRO
functional I-PRO
pattern O
exhibit O
a O
<nUm> O
% O
higher O
jsc B-PRO
value O
and O
a O
<nUm> O
% O
higher O
overall O
conversion B-PRO
efficiency I-PRO
, O
compared O
to O
an O
identical O
solar B-APL
cell I-APL
on O
flat O
Ag B-MAT
. O


some O
peculiarities O
of O
the O
diamond B-MAT
micro-powder B-DSC
sintering B-SMT


diamond B-MAT
micro-powders B-DSC
of O
<nUm> O
/ O
<nUm> O
mm O
mean O
particle B-DSC
size O
were O
sintered B-SMT
under O
conditions O
of O
high O
pressure O
of O
<nUm> O
and O
<nUm> O
GPa O
at O
temperatures O
of O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
° O
C O
during O
various O
sintering B-SMT
times O
, O
aiming O
to O
obtain O
polycrystalline B-DSC
compacts O
with O
required O
strength B-PRO
. O


the O
experiments O
were O
carried O
out O
by O
using O
an O
anvil B-CMT
type I-CMT
high I-CMT
pressure I-CMT
device I-CMT
with O
toroidal O
concavity O
of O
<nUm> O
mm O
diameter O
. O


it O
was O
obtained O
samples O
with O
<nUm> O
mm O
diameter O
and O
<nUm> O
mm O
height O
. O


it O
was O
plotted O
the O
polycrystalline B-DSC
diamonds B-MAT
density B-PRO
dependency O
as O
a O
function O
of O
the O
process O
duration O
under O
the O
above O
mentioned O
sintering B-SMT
conditions O
. O


the O
kinetics O
of O
powder B-DSC
consolidation O
was O
studied O
by O
x-ray B-CMT
diffraction I-CMT
, O
which O
allowed O
the O
establishment O
of O
the O
correlation O
between O
the O
( O
<nUm> O
) O
plane O
enlargement O
of O
diamond B-MAT
and O
the O
structural B-PRO
transformations I-PRO
that O
took O
place O
during O
sintering B-SMT
. O


another O
objective O
was O
the O
study O
of O
the O
graphitization B-PRO
kinetics I-PRO
of O
diamonds B-MAT
under O
the O
action O
of O
the O
sintering B-SMT
parameters O
. O


it O
was O
concluded O
that O
over O
the O
established O
consolidation O
mechanisms O
, O
also O
acts O
the O
partial O
shear O
mechanism O
. O


effect O
of O
Si B-PRO
content I-PRO
on O
the O
microstructure B-PRO
and O
mechanical B-PRO
properties I-PRO
of O
Mo B-MAT
– I-MAT
Al I-MAT
– I-MAT
Si I-MAT
– I-MAT
N I-MAT
coatings B-APL


Mo B-MAT
– I-MAT
Al I-MAT
( I-MAT
Al I-MAT
/ I-MAT
( I-MAT
Mo I-MAT
+ I-MAT
Al I-MAT
) I-MAT
= I-MAT
<nUm> I-MAT
% I-MAT
) I-MAT
– I-MAT
Si I-MAT
– I-MAT
N I-MAT
coatings B-APL
with O
silicon B-PRO
content I-PRO
ranging O
from O
<nUm> O
to O
<nUm> O
at. O
% O
were O
fabricated O
using O
d.c. B-SMT
reactive I-SMT
unbalanced I-SMT
magnetron I-SMT
sputtering I-SMT
technique O
in O
an O
Ar O
– O
N O
mixture O
. O


surface B-PRO
morphology I-PRO
, O
element B-PRO
and O
phase B-PRO
composition I-PRO
, O
residual B-PRO
stress I-PRO
and O
nanohardness B-PRO
of O
these O
coatings B-APL
were O
studied O
by O
scanned B-CMT
electrical I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
, O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
, O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
residual B-CMT
stress I-CMT
tester I-CMT
, O
and O
nanoindenter B-CMT
, O
respectively O
. O


results O
exhibit O
that O
the O
residual B-PRO
stress I-PRO
built O
in O
the O
coating B-APL
is O
compressive O
in O
nature O
ranging O
between O
<nUm> O
and O
<nUm> O
GPa O
. O


nanohardness B-PRO
of O
Mo B-MAT
– I-MAT
Al I-MAT
– I-MAT
Si I-MAT
– I-MAT
N I-MAT
coatings B-APL
increased O
at O
first O
and O
then O
decreased O
with O
silicon B-PRO
content I-PRO
, O
reaching O
a O
maximum O
value O
of O
<nUm> O
GPa O
at O
<nUm> O
at. O
% O
Si B-MAT
. O


the O
optimum O
hardness B-PRO
could O
be O
ascribed O
to O
higher O
compressive B-PRO
stress I-PRO
and O
nanocomposite B-DSC
structure O
where O
nanocrystallite B-DSC
Mo B-MAT
– I-MAT
Al I-MAT
– I-MAT
Si I-MAT
– I-MAT
N I-MAT
embedded O
in O
amorphous B-DSC
N4Si3 B-MAT
matrix B-DSC
. O


effects O
of O
Cu B-MAT
addition O
on O
the O
glass B-PRO
forming I-PRO
ability I-PRO
and O
corrosion B-PRO
resistance I-PRO
of O
Ti-Zr-Be-Ni B-MAT
alloys B-DSC


the O
Ti B-MAT
- O
based O
bulk B-DSC
metallic B-PRO
glasses I-PRO
( O
BMG B-PRO
) O
with O
high O
Ti B-PRO
content I-PRO
( O
> O
<nUm> O
at. O
% O
) O
have O
attracted O
wide O
attention O
for O
their O
outstanding O
mechanical B-PRO
properties I-PRO
, O
despite O
their O
glass B-PRO
forming I-PRO
ability I-PRO
( O
GFA B-PRO
) O
is O
still O
relatively O
poor O
. O


here O
the O
(Ti55Zr15Be20Ni10)100-xCux(x B-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
and I-MAT
<nUm> I-MAT
at. I-MAT
% I-MAT
) I-MAT
BMGs B-PRO
were O
designed O
and O
prepared O
by O
copper B-MAT
mold B-SMT
casting I-SMT
. O


the O
critical B-PRO
diameter I-PRO
of O
the O
original O
alloy B-DSC
could O
be O
enhanced O
from O
<nUm> O
mm O
to O
<nUm> O
mm O
with O
the O
Cu B-MAT
addition O
of O
<nUm> O
at. O
% O
, O
which O
is O
the O
first O
reported O
centimeter O
- O
sized O
Ti B-MAT
- O
based O
BMG B-PRO
with O
Ti B-PRO
content I-PRO
more O
than O
<nUm> O
at. O
% O
. O


In O
addition O
, O
all O
the O
as-prepared B-DSC
BMGs B-PRO
exhibited O
higher O
yield B-PRO
strength I-PRO
( O
above O
<nUm> O
MPa O
) O
. O


and O
the O
supercooled B-PRO
liquid I-PRO
range I-PRO
of O
the O
as-prepared B-DSC
Ti B-MAT
- O
based O
BMGs B-PRO
were O
enlarged O
from O
<nUm> O
K O
to O
<nUm> O
K O
by O
Cu B-MAT
addition O
. O


electrochemical B-CMT
measurements I-CMT
showed O
that O
the O
BMGs B-PRO
with O
Cu B-MAT
addition O
of O
<nUm> O
– O
<nUm> O
at. O
% O
exhibited O
much O
higher O
pitting B-PRO
potentials I-PRO
( O
over O
<nUm> O
mV O
/ O
SCE O
) O
than O
that O
of O
<nUm> B-MAT
stainless I-MAT
steel I-MAT
( O
304SS B-MAT
) O
in O
<nUm> O
wt O
% O
ClNa B-MAT
aqueous O
solution O
. O


and O
the O
XPS B-CMT
analysis O
revealed O
that O
the O
Cu B-MAT
addition O
might O
lead O
to O
the O
enrichment O
of O
Cu B-MAT
and O
the O
deficiency O
of O
Ti B-MAT
, O
Zr B-MAT
, O
Ni B-MAT
elements O
in O
passive O
film B-DSC
, O
which O
could O
induce O
the O
worse O
corrosion B-PRO
resistance I-PRO
of O
the O
Ti B-MAT
- O
based O
BMGs B-PRO
with O
high O
Cu B-MAT
content O
. O


the O
results O
indicate O
that O
the O
developed O
Ti B-MAT
- O
based O
BMGs B-PRO
possess O
good O
GFA B-PRO
, O
mechanical B-PRO
properties I-PRO
and O
corrosion B-PRO
resistance I-PRO
. O


studies O
on O
electrical B-PRO
and O
multiferroic B-PRO
properties I-PRO
of O
chemical B-SMT
solution I-SMT
deposited I-SMT
Bi95Cr3Fe97La5O300 B-MAT
/ O
CoFe2O4 B-MAT
double B-DSC
layered I-DSC
thin B-APL
film I-APL
capacitors I-APL


Bi95Cr3Fe97La5O300 B-MAT
/ O
CoFe2O4 B-MAT
double B-DSC
layered I-DSC
thin I-DSC
film I-DSC
was O
prepared O
on O
a O
Pt(111) B-MAT
/ O
Ti B-MAT
/ O
O2Si B-MAT
/ O
Si(100) B-MAT
substrate B-DSC
by O
using O
a O
chemical B-SMT
solution I-SMT
deposition I-SMT
method O
. O


by O
introducing O
CoFe2O4 B-MAT
buffer B-DSC
layer I-DSC
, O
the O
leakage B-PRO
current I-PRO
density I-PRO
and O
the O
multiferroic B-PRO
properties I-PRO
have O
been O
significantly O
improved O
. O


low O
leakage B-PRO
current I-PRO
density I-PRO
of O
<nUm> O
× O
10-7 O
A O
/ O
cm2 O
at O
<nUm> O
kV O
/ O
cm O
, O
saturated B-CMT
ferroelectric I-CMT
hysteresis I-CMT
loop I-CMT
with O
2Pr B-PRO
of O
<nUm> O
mC O
/ O
cm2 O
and O
2Ec B-PRO
of O
<nUm> O
kV O
/ O
cm O
at O
applied O
electric O
field O
of O
<nUm> O
kV O
/ O
cm O
and O
ferromagnetic B-CMT
hysteresis I-CMT
loop I-CMT
with O
2Mr B-PRO
of O
<nUm> O
kA O
/ O
m O
and O
2Hc B-PRO
of O
<nUm> O
kA O
/ O
m O
at O
the O
magnetic O
field O
of O
1587kA O
/ O
m O
were O
observed O
in O
the O
double B-DSC
layered I-DSC
thin I-DSC
film I-DSC
at O
room O
temperature O
. O


the O
improved O
electrical B-PRO
and O
multiferroic B-PRO
properties I-PRO
are O
ascribed O
to O
the O
stabilized O
perovskite B-SPL
structure O
by O
reducing O
oxygen B-PRO
vacancies I-PRO
due O
to O
the O
co-doping B-SMT
elements O
, O
which O
may O
also O
suppress O
the O
cycloid B-PRO
spin I-PRO
structure I-PRO
in O
BiFeO3 B-MAT
. O


furthermore O
, O
CoFe2O4 B-MAT
buffer B-DSC
layer I-DSC
acts O
as O
a O
current B-APL
barrier I-APL
of O
( O
La B-MAT
, O
Cr B-MAT
) O
co-doped B-DSC
BiFeO3 B-MAT
. O


oxidation B-SMT
of O
<nUm> B-MAT
carbon I-MAT
steel I-MAT
in O
borate B-MAT
medium O
by O
in O
situ O
EC B-CMT
- I-CMT
STM I-CMT
: O
surface B-PRO
morphology I-PRO
of O
the O
oxidized B-SMT
ferrite B-MAT
and O
pearlite B-MAT
phases O


microstructures B-PRO
of O
low B-MAT
carbon I-MAT
steel I-MAT
are O
ferrite B-MAT
( O
fe-a B-MAT
) O
and O
pearlite B-MAT
( O
alternate O
mixture O
of O
fe-a B-MAT
and O
CFe3 B-MAT
) O
and O
each O
one O
has O
its O
own O
oxidation B-PRO
mechanism I-PRO
. O


these O
two O
phases O
were O
identified O
using O
in O
situ O
electrochemical B-CMT
scanning I-CMT
tunneling I-CMT
microscopy I-CMT
( O
EC B-CMT
- I-CMT
STM I-CMT
) O
. O


real O
time O
images O
were O
obtained O
during O
the O
immersion O
of O
<nUm> B-MAT
carbon I-MAT
steel I-MAT
probes O
in O
<nUm> O
m O
BH3O3 O
and O
<nUm> O
m O
HNaO O
, O
pH O
<nUm> O
. O


two O
different O
corrosion B-PRO
mechanisms I-PRO
( O
oxide B-MAT
characteristics O
) O
were O
identified O
and O
correlated O
with O
the O
observed O
surface B-DSC
changes O
. O


crystal O
growth O
and O
characterization O
of O
the O
transition B-MAT
metal I-MAT
silicides I-MAT
MoSi2 I-MAT
and O
Si2W B-MAT


single B-DSC
crystals I-DSC
of O
molybdenum B-MAT
silicide I-MAT
, O
MoSi2 B-MAT
, O
and O
tungsten B-MAT
silicide I-MAT
, O
Si2W B-MAT
, O
were O
grown O
using O
the O
floating B-SMT
zone I-SMT
technique I-SMT
. O


the O
crystals B-DSC
were O
grown O
at O
a O
He O
ambient O
gas O
pressure O
of O
up O
to O
<nUm> O
MPa O
. O


characterization O
was O
made O
using O
x-ray B-CMT
powder I-CMT
diffraction I-CMT
and O
single B-CMT
crystal I-CMT
neutron I-CMT
diffraction I-CMT
analysis O
. O


the O
growth O
of O
barium B-MAT
titanate I-MAT
single B-DSC
crystals I-DSC
by O
the O
travelling B-SMT
solvent I-SMT
zone I-SMT
technique I-SMT


single B-DSC
crystal I-DSC
boules I-DSC
of O
BaO3Ti B-MAT
∽ O
: O
cm O
long O
by O
<nUm> O
mm O
diameter O
have O
been O
grown O
using O
a O
travelling B-SMT
solvent I-SMT
zone I-SMT
technique I-SMT
with O
excess O
rutile B-SPL
as O
the O
flux O
. O


the O
measured O
curie B-PRO
point I-PRO
of O
the O
crystals B-DSC
is O
<nUm> O
° O
C O
. O


reversibility O
of O
photoinduced O
changes O
of O
magnetic B-PRO
permeability I-PRO
and O
hysteresis B-PRO
loop I-PRO
in O
photomagnetic B-PRO
yttrium B-MAT
iron I-MAT
garnets I-MAT


the O
effect O
of O
variable O
magnetic O
field O
, O
applied O
to O
the O
specimen O
during O
its O
illumination O
, O
on O
photoinduced O
changes O
of O
magnetic B-PRO
permeability I-PRO
and O
hysteresis B-PRO
loop I-PRO
in O
yttrium B-MAT
iron I-MAT
garnet B-SPL
( O
YIG B-MAT
) O
single B-DSC
crystals I-DSC
is O
investigated O
. O


it O
has O
been O
found O
, O
that O
illumination O
can O
, O
not O
only O
cause O
a O
decrease O
of O
dynamic B-PRO
permeability I-PRO
as O
a O
result O
of O
stabilization O
of O
the O
domain B-PRO
structure I-PRO
( O
DS B-PRO
) O
, O
but O
also O
cause O
an O
increase O
of O
this O
quantity O
in O
the O
case O
where O
illumination O
is O
combined O
with O
reversal O
of O
magnetization B-PRO
of O
the O
specimen O
. O


the O
increase O
of O
the O
permeability B-PRO
may O
take O
place O
either O
due O
to O
destabilization O
of O
the O
DS B-PRO
only O
, O
or O
due O
to O
photoinduced O
reconstruction O
of O
the O
DS B-PRO
. O


bismuth B-MAT
silicate I-MAT
glass B-DSC
: O
A O
new O
choice O
for O
<nUm> O
mm O
fiber B-APL
lasers I-APL


we O
report O
on O
a O
new O
yb3+ O
/ O
tm3+ O
/ O
ho3+ O
co-doped B-DSC
bismuth B-MAT
silicate I-MAT
glass B-DSC
: O
O2Si B-MAT
– I-MAT
Bi2O3 I-MAT
– I-MAT
R2O I-MAT
( I-MAT
r I-MAT
= I-MAT
Li I-MAT
, I-MAT
Na I-MAT
, I-MAT
K I-MAT
) I-MAT
for O
<nUm> O
mm O
fiber B-APL
lasers I-APL
. O


Bi2O3 B-MAT
was O
introduced O
into O
alkali B-MAT
silicate I-MAT
glass B-DSC
to O
optimize O
<nUm> O
mm O
emission B-PRO
properties I-PRO
. O


physical B-PRO
, O
chemical B-PRO
and O
spectroscopic B-PRO
properties I-PRO
of O
yb3+ O
/ O
tm3+ O
/ O
ho3+ O
co-doped B-DSC
O2Si B-MAT
– I-MAT
Bi2O3 I-MAT
– I-MAT
R2O I-MAT
( O
SBR B-MAT
) O
glass B-DSC
were O
presented O
. O


the O
yb3+ O
/ O
tm3+ O
/ O
ho3+ O
co-doped B-DSC
SBR B-MAT
glass B-DSC
shows O
excellent O
thermal B-PRO
stability I-PRO
( O
DT B-PRO
= O
<nUm> O
° O
C O
) O
, O
an O
intense O
<nUm> O
mm O
emission O
pumped O
by O
<nUm> O
nm O
LD O
with O
a O
lifetime O
of O
<nUm> O
ms O
and O
width O
of O
<nUm> O
nm O
, O
large O
maximum O
emission B-PRO
cross I-PRO
section I-PRO
of O
ho3+ O
( O
<nUm> O
× O
<nUm> O
− O
<nUm> O
cm2 O
) O
, O
thus O
large O
semt B-PRO
product O
( O
<nUm> O
× O
10-24 O
cm2s O
) O
, O
which O
suggest O
its O
application O
in O
<nUm> O
mm O
fiber B-APL
lasers I-APL
. O


MOVPE B-SMT
growth O
of O
semi-polar B-PRO
GaN B-MAT
light B-APL
- I-APL
emitting I-APL
diode I-APL
structures O
on O
planar O
Si(112) B-MAT
and O
Si(113) B-MAT
substrates B-DSC


we O
present O
semi-polar B-PRO
GaN B-MAT
light B-APL
- I-APL
emitting I-APL
diode I-APL
( O
LED B-APL
) O
structures O
grown O
on O
non-patterned O
Si(112) B-MAT
and O
Si(113) B-MAT
substrates B-DSC
by O
metal B-SMT
organic I-SMT
vapor I-SMT
phase I-SMT
epitaxy I-SMT
. O


cathodoluminescence B-CMT
and O
field B-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
are O
used O
for O
sample O
characterization O
. O


A O
correlation O
between O
the O
structural B-PRO
and O
optical B-PRO
properties I-PRO
of O
the O
semi-polar B-PRO
GaN B-MAT
LED B-APL
structures O
is O
observed O
. O


In O
samples O
, O
which O
were O
simultaneously O
grown O
on O
Si(112) B-MAT
and O
Si(113) B-MAT
under O
growth O
conditions O
optimized O
for O
Si(112) B-MAT
, O
we O
observed O
that O
structures O
on O
Si(112) B-MAT
consist O
of O
a O
relatively O
smooth O
surface B-DSC
but O
those O
on O
Si(113) B-MAT
have O
a O
large O
number O
of O
surface B-PRO
pits I-PRO
with O
a O
three O
dimensional O
growth O
mode O
of O
the O
GaN B-MAT
layers B-DSC
resulting O
in O
a O
rough O
GaN B-MAT
surface B-DSC
. O


the O
growth O
conditions O
were O
further O
optimized O
to O
obtain O
smooth O
GaN B-MAT
layers B-DSC
on O
Si(113) B-MAT
and O
compared O
to O
the O
sample O
on O
Si(112) B-MAT
. O


enthalpies B-PRO
of I-PRO
formation I-PRO
and O
insights O
into O
defect B-PRO
association I-PRO
in O
ceria B-MAT
singly O
and O
doubly B-DSC
doped I-DSC
with O
neodymia B-MAT
and O
samaria B-MAT


it O
has O
been O
suggested O
that O
co-doping B-DSC
ceria B-MAT
with O
two O
trivalent O
ions O
of O
different O
sizes O
to O
minimize O
lattice O
strain O
produces O
materials O
with O
better O
ionic B-PRO
conductivity I-PRO
. O


to O
investigate O
the O
thermodynamic O
basis O
of O
such O
behavior O
, O
enthalpies B-PRO
of I-PRO
formation I-PRO
at O
room O
temperature O
of O
samarium B-MAT
- O
doped B-DSC
ceria B-MAT
( O
Ce1-xSmxO2-0.5x B-MAT
with I-MAT
<nUm> I-MAT
< I-MAT
x I-MAT
< I-MAT
<nUm> I-MAT
) I-MAT
, O
neodymium B-MAT
- O
doped B-DSC
ceria B-MAT
( I-MAT
Ce1-xNdxO2-0.5x I-MAT
with I-MAT
<nUm> I-MAT
< I-MAT
x I-MAT
< I-MAT
<nUm> I-MAT
) I-MAT
, O
and O
neodymia B-MAT
– O
samaria B-MAT
co-doped B-DSC
ceria B-MAT
( O
Ce1-xNdx B-MAT
/ I-MAT
2Smx I-MAT
/ I-MAT
2O2-0.5x I-MAT
with I-MAT
<nUm> I-MAT
< I-MAT
x I-MAT
< I-MAT
<nUm> I-MAT
) O
have O
been O
measured O
by O
high B-CMT
temperature I-CMT
oxide I-CMT
melt I-CMT
solution I-CMT
calorimetry I-CMT
. O


the O
energetics B-PRO
of O
the O
solid B-DSC
solutions I-DSC
were O
analyzed O
in O
terms O
of O
cation B-PRO
size I-PRO
mismatch I-PRO
and O
defect B-PRO
association I-PRO
. O


At O
concentrations O
below O
x O
= O
<nUm> O
, O
endothermic O
( O
destabilization O
) O
heat B-PRO
of I-PRO
formation I-PRO
is O
attributed O
to O
the O
dominance O
of O
size B-PRO
mismatch I-PRO
. O


considerable O
energetic B-PRO
stabilization I-PRO
at O
x O
> O
<nUm> O
for O
singly B-DSC
doped I-DSC
ceria B-MAT
systems O
can O
be O
attributed O
to O
defect B-PRO
associates I-PRO
of O
trivalent O
cations O
coupled O
with O
charge O
- O
balancing O
oxygen B-PRO
vacancies I-PRO
. O


for O
co-doped B-DSC
Ce1-xNdx B-MAT
/ I-MAT
2Smx I-MAT
/ I-MAT
2O2-0.5x I-MAT
, O
there O
is O
less O
destabilization O
at O
low O
x O
compared O
to O
singly B-DSC
doped I-DSC
CeO2 B-MAT
but O
less O
stabilization O
at O
high O
x O
and O
a O
shift O
in O
the O
composition O
of O
maximum O
( O
most O
endothermic O
) O
formation B-PRO
enthalpy I-PRO
toward O
higher O
dopant B-PRO
concentration I-PRO
. O


enthalpies B-PRO
of I-PRO
defect I-PRO
association I-PRO
of O
Ce1-xNdx B-MAT
/ I-MAT
2Smx I-MAT
/ I-MAT
2O2-0.5x I-MAT
are O
less O
exothermic O
than O
those O
of O
singly B-DSC
doped I-DSC
materials O
. O


additive O
manufacturing O
of O
HfNiTi B-MAT
high O
temperature O
shape B-PRO
memory I-PRO
alloy B-DSC


A O
NiTi-20Hf B-MAT
high O
temperature O
shape B-PRO
memory I-PRO
alloy B-DSC
( O
HTSMA B-PRO
) O
was O
additively O
manufactured O
by O
selective B-SMT
laser I-SMT
melting I-SMT
( O
SLM B-SMT
) O
technique O
using O
HfNiTi B-MAT
powder B-DSC
. O


the O
thermomechanical B-PRO
and O
shape B-PRO
memory I-PRO
response I-PRO
were O
compared O
to O
the O
conventional O
vacuum B-SMT
induction I-SMT
skull I-SMT
melted I-SMT
counterpart O
. O


transformation B-PRO
temperatures I-PRO
of O
the O
SLM B-SMT
material O
were O
found O
to O
be O
above O
<nUm> O
° O
C O
and O
slightly O
lower O
due O
to O
the O
additional O
oxygen O
pick O
up O
from O
the O
gas B-SMT
atomization I-SMT
and O
melting B-SMT
process O
. O


the O
shape B-PRO
memory I-PRO
response I-PRO
in O
compression O
was O
measured O
for O
stresses O
up O
to O
500MPa O
, O
and O
transformation B-PRO
strains I-PRO
were O
found O
to O
be O
very O
comparable O
( O
up O
to O
<nUm> O
% O
for O
as-extruded B-SMT
; O
up O
to O
<nUm> O
% O
for O
SLM B-SMT
) O
. O


effect O
of O
temperature O
and O
age O
on O
the O
relationship O
between O
dynamic B-PRO
and I-PRO
static I-PRO
elastic I-PRO
modulus I-PRO
of O
concrete B-MAT


this O
study O
investigates O
the O
effects O
of O
cement B-MAT
type O
, O
curing B-SMT
temperature O
, O
and O
age O
on O
the O
relationships O
between O
dynamic B-PRO
and I-PRO
static I-PRO
elastic I-PRO
moduli I-PRO
or O
compressive B-PRO
strength I-PRO
. O


based O
on O
the O
investigation O
, O
new O
relationship O
equations O
are O
proposed O
. O


the O
impact B-CMT
- I-CMT
echo I-CMT
method I-CMT
is O
used O
to O
measure O
the O
resonant B-PRO
frequency I-PRO
of O
specimens O
from O
which O
the O
dynamic B-PRO
elastic I-PRO
modulus I-PRO
is O
calculated O
. O


types O
I O
and O
V O
cement B-MAT
concrete I-MAT
specimens O
with O
water B-PRO
– I-PRO
cement I-PRO
ratios I-PRO
of O
<nUm> O
and O
<nUm> O
are O
cured B-SMT
isothermally O
at O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
° O
C O
and O
tested O
at O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
days O
. O


cement B-MAT
type O
and O
age O
do O
not O
have O
a O
significant O
influence O
on O
the O
relationship O
between O
dynamic B-PRO
and I-PRO
static I-PRO
elastic I-PRO
moduli I-PRO
, O
but O
the O
ratio B-PRO
of I-PRO
static I-PRO
to I-PRO
dynamic I-PRO
elastic I-PRO
modulus I-PRO
approaches O
<nUm> O
as O
temperature O
increases O
. O


the O
initial O
chord B-PRO
elastic I-PRO
modulus I-PRO
, O
which O
is O
measured O
at O
low O
strain O
level O
, O
is O
similar O
to O
the O
dynamic B-PRO
elastic I-PRO
modulus I-PRO
. O


the O
relationship O
between O
dynamic B-PRO
elastic I-PRO
modulus I-PRO
and O
compressive B-PRO
strength I-PRO
has O
the O
same O
tendency O
as O
the O
relationship O
between O
dynamic B-PRO
and I-PRO
static I-PRO
elastic I-PRO
moduli I-PRO
for O
various O
cement B-MAT
types O
, O
temperatures O
, O
and O
ages O
. O


magnetocaloric B-PRO
effect I-PRO
in O
the O
La0.8Ce0.2Fe11.4- B-MAT
x I-MAT
Co I-MAT
x I-MAT
si1.6 I-MAT
compounds O


the O
effects O
of O
substitution O
of O
Co B-MAT
for O
Fe B-MAT
on O
the O
magnetic B-PRO
and O
magnetocaloric B-PRO
properties I-PRO
of O
La0.8Ce0.2Fe11.4-xCoxSi1.6 B-MAT
( I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
and I-MAT
<nUm> I-MAT
) I-MAT
compounds O
have O
been O
investigated O
. O


x-ray B-CMT
diffraction I-CMT
shows O
that O
all O
compounds O
crystallize O
in O
the O
NaZn13 B-MAT
- O
type O
structure O
. O


magnetic B-CMT
measurements I-CMT
show O
that O
the O
curie B-PRO
temperature I-PRO
( O
TC B-PRO
) O
can O
be O
tuned O
between O
<nUm> O
and O
<nUm> O
K O
by O
changing O
the O
Co B-MAT
content O
from O
<nUm> O
to O
<nUm> O
. O


A O
field O
- O
induced O
methamagnetic B-PRO
transition I-PRO
occurs O
in O
samples O
with O
x O
= O
<nUm> O
, O
<nUm> O
and O
<nUm> O
. O


the O
magnetic B-PRO
entropy I-PRO
changes O
of O
the O
compounds O
have O
been O
determined O
from O
the O
isothermal B-CMT
magnetization I-CMT
measurements I-CMT
by O
using O
the O
maxwell B-CMT
relation I-CMT
. O


microstructure B-PRO
and O
ferroelectric B-PRO
properties I-PRO
of O
Bi16O60Ti15Y4 B-MAT
thin B-DSC
films I-DSC
prepared O
by O
sol B-SMT
– I-SMT
gel I-SMT
method O


yttrium B-MAT
- O
substituted B-DSC
bismuth B-MAT
titanate I-MAT
( O
Bi16O60Ti15Y4 B-MAT
, O
BYT B-MAT
) O
thin B-DSC
films I-DSC
were O
successfully O
deposited O
on O
Pt(111) B-MAT
/ O
Ti B-MAT
/ O
O2Si B-MAT
/ O
Si(100) B-MAT
substrates B-DSC
by O
spin B-SMT
coating I-SMT
with O
a O
sol B-SMT
– I-SMT
gel I-SMT
technology O
and O
rapid B-SMT
thermal I-SMT
annealing I-SMT
. O


the O
effects O
of O
annealing B-SMT
temperature O
( O
<nUm> O
– O
<nUm> O
° O
C O
) O
on O
microstructure B-PRO
and O
electrical B-PRO
properties I-PRO
of O
thin B-DSC
films I-DSC
were O
investigated O
. O


x-ray B-CMT
diffraction I-CMT
analysis O
shows O
that O
the O
BYT B-MAT
thin B-DSC
films I-DSC
have O
a O
bismuth B-MAT
- O
layered B-DSC
perovskite B-SPL
structure O
with O
preferred O
( O
<nUm> O
) O
orientation O
. O


the O
intensities O
of O
( O
<nUm> O
) O
peaks O
increases O
with O
increasing O
annealing B-SMT
temperature O
. O


with O
the O
increase O
of O
annealing B-SMT
temperature O
from O
<nUm> O
to O
<nUm> O
° O
C O
, O
the O
grain B-PRO
size I-PRO
of O
BYT B-MAT
thin B-DSC
films I-DSC
increases O
. O


the O
highly O
(117)-oriented O
BYT B-MAT
thin B-DSC
films I-DSC
exhibit O
a O
high O
- O
remnant B-PRO
polarization I-PRO
( O
2Pr B-PRO
) O
of O
<nUm> O
mC O
/ O
 O
cm2 O
and O
a O
low O
- O
coercive B-PRO
field I-PRO
( O
2Ec B-PRO
) O
of O
<nUm> O
kV O
/ O
cm O
, O
fatigue B-PRO
free I-PRO
characteristics I-PRO
up O
to O
> O
<nUm> O
switching O
cycles O
. O


the O
leakage B-PRO
current I-PRO
density I-PRO
( O
J B-PRO
) O
were O
<nUm> O
× O
10-8 O
A O
/ O
cm2 O
at O
<nUm> O
kV O
/ O
cm O
. O


these O
results O
indicate O
that O
the O
highly O
(117)-oriented O
BYT B-MAT
thin B-DSC
film I-DSC
is O
useful O
in O
nonvolatile B-APL
ferroelectric I-APL
random I-APL
access I-APL
memory I-APL
applications I-APL
. O


size O
- O
controlled O
nc B-MAT
- I-MAT
Si I-MAT
: I-MAT
H I-MAT
/ O
a-SiC B-MAT
: I-MAT
H I-MAT
quantum B-DSC
dots I-DSC
superlattice I-DSC
and O
its O
application O
to O
hydrogenated B-APL
amorphous I-APL
silicon I-APL
solar I-APL
cells I-APL


boron B-MAT
doped B-DSC
nc B-MAT
- I-MAT
Si I-MAT
: I-MAT
H I-MAT
/ O
a-SiC B-MAT
: I-MAT
H I-MAT
quantum B-DSC
dot I-DSC
superlattice I-DSC
( O
QDSL B-DSC
) O
has O
a O
great O
potential O
to O
improve O
thin B-APL
film I-APL
silicon I-APL
solar I-APL
cells I-APL
performance O
for O
high O
conductivity B-PRO
, O
wide O
band B-PRO
gap I-PRO
and O
anti-reflection B-PRO
effect I-PRO
. O


In O
this O
study O
p B-PRO
- I-PRO
type I-PRO
nc B-MAT
- I-MAT
Si I-MAT
: I-MAT
H I-MAT
/ O
a-SiC B-MAT
: I-MAT
H I-MAT
QDSL B-DSC
has O
been O
fabricated O
by O
in O
situ O
grown O
method O
without O
subsequent O
annealing B-SMT
treatment O
. O


high B-CMT
resolution I-CMT
transmission I-CMT
electron I-CMT
microscopy I-CMT
and O
PL B-CMT
peak O
energy O
shift O
indicate O
that O
this O
method O
provides O
the O
possibility O
to O
precisely O
control O
the O
size O
of O
silicon B-MAT
quantum B-DSC
dots I-DSC
and O
the O
passivation O
at O
well O
/ O
barrier O
interface O
. O


by O
optimizing O
structural B-PRO
characteristics I-PRO
and O
interface B-PRO
passivation I-PRO
, O
high O
perpendicular B-PRO
conductivity I-PRO
and O
strong O
anti-reflection B-PRO
effect I-PRO
was O
simultaneously O
obtained O
in O
QDSL B-DSC
films I-DSC
. O


an O
initial O
efficiency B-PRO
of O
<nUm> O
% O
was O
achieved O
for O
n-i-p B-APL
type I-APL
hydrogenated I-APL
amorphous I-APL
silicon I-APL
solar I-APL
cell I-APL
, O
which O
may O
guide O
further O
efforts O
arising O
the O
structure O
engineering O
of O
nc B-MAT
- I-MAT
Si I-MAT
: I-MAT
H I-MAT
/ O
a-SiC B-MAT
: I-MAT
H I-MAT
QDSL B-DSC
for O
high O
efficient O
solar B-APL
cells I-APL
. O


ferromagnetic B-CMT
resonance I-CMT
studies I-CMT
of O
nanocrystalline B-DSC
La3Mn5O15Pb2 B-MAT
thin B-DSC
films I-DSC


systematic O
magnetic O
field O
dependent O
microwave B-CMT
absorption I-CMT
measurements O
have O
been O
performed O
on O
nanocrystalline B-DSC
La3Mn5O15Pb2 B-MAT
( O
LPMO B-MAT
) O
thin B-DSC
films I-DSC
over O
a O
temperature O
range O
of O
<nUm> O
– O
<nUm> O
K O
. O


In O
addition O
to O
a O
regular O
ferromagnetic B-CMT
resonance I-CMT
( O
FMR B-CMT
) O
signal O
below O
the O
curie B-PRO
temperature I-PRO
of O
<nUm> O
K O
, O
we O
have O
observed O
a O
second O
FMR B-CMT
line O
at O
temperatures O
≤ O
<nUm> O
K O
, O
which O
is O
accompanied O
by O
a O
nonresonant B-CMT
microwave I-CMT
absorption I-CMT
signal O
centered O
at O
zero O
magnetic O
field O
. O


the O
two O
components O
of O
FMR B-CMT
lines O
are O
identified O
to O
originate O
from O
bulk B-DSC
and O
surface B-PRO
magnetic I-PRO
orderings I-PRO
of O
the O
LPMO B-MAT
nanocrystallites B-DSC
. O


the O
temperature O
dependence O
of O
the O
linewidth B-PRO
( O
γ B-PRO
) O
revealed O
that O
the O
bulk O
of O
the O
crystallites B-DSC
contain O
chemical B-PRO
inhomogeneities I-PRO
, O
while O
the O
surface B-DSC
has O
a O
magnetic B-PRO
spin I-PRO
glass I-PRO
character I-PRO
. O


the O
hysteresis O
of O
the O
nonresonant B-CMT
absorption I-CMT
signal O
in O
LPMO B-MAT
films B-DSC
is O
found O
to O
differ O
from O
those O
of O
superconductors B-PRO
and O
, O
to O
originate O
due O
to O
magneto O
- O
induced O
microwave B-PRO
conductivity I-PRO
of O
surface B-PRO
spin I-PRO
glass I-PRO
. O


grain B-PRO
morphology I-PRO
and O
crystal B-PRO
structure I-PRO
of O
pre-transition O
oxides B-MAT
formed O
on O
zircaloy-4 B-MAT


grain B-PRO
morphology I-PRO
and O
crystal B-PRO
structure I-PRO
of O
pre-transition O
oxides B-MAT
formed O
on O
a O
zircaloy-4 B-MAT
alloy B-DSC
were O
investigated O
. O


the O
results O
show O
that O
monoclinic B-SPL
columnar O
grains O
align O
tightly O
in O
inner O
oxides B-MAT
, O
whereas O
porous B-DSC
monoclinic B-SPL
equiaxed O
grains O
exist O
in O
outer O
oxides B-MAT
. O


small O
- O
sized O
tetragonal B-SPL
equiaxed O
grains O
are O
embedded O
in O
monoclinic B-SPL
columnar O
grains O
, O
with O
tetragonal B-SPL
phase O
content O
declining O
from O
the O
inner O
to O
the O
outer O
oxides B-MAT
. O


the O
crystallographic B-PRO
orientation I-PRO
relationship I-PRO
of O
(111)m O
/ O
/ O
( O
<nUm> O
<nUm> O
¯ O
0)a-Zr B-MAT
was O
identified O
, O
which O
explains O
well O
the O
formation O
of O
monoclinic B-SPL
texture O
on O
the O
zirconium B-MAT
substrate B-DSC
. O


this O
work O
advances O
the O
understanding O
of O
corrosion B-PRO
properties I-PRO
before O
transition O
of O
oxidation B-SMT
of O
zirconium B-MAT
alloys B-DSC
. O


octahedral O
iron B-MAT
phosphate I-MAT
hydroxide I-MAT
microcrystals B-DSC
: O
fast B-SMT
microwave-hydrothermal I-SMT
preparation I-SMT
, O
influencing O
factors O
and O
the O
shape O
evolution O


octahedral O
Fe4H3O15P3 B-MAT
microcrystals B-DSC
have O
been O
successfully O
prepared O
by O
a O
microwave B-SMT
- I-SMT
assisted I-SMT
hydrothermal I-SMT
route I-SMT
at O
<nUm> O
° O
C O
for O
<nUm> O
min O
, O
employing O
FeCl3*6H2O B-MAT
and O
NaH2PO4*2H2O B-MAT
as O
the O
starting O
materials O
in O
the O
presence O
of O
proper O
amounts O
of O
Na2O3S B-MAT
and O
acetic O
acid O
( O
AcH O
) O
. O


the O
phase B-PRO
and O
morphology B-PRO
of O
the O
as-prepared B-DSC
product O
were O
characterized O
by O
means O
of O
powder B-CMT
x-ray I-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
energy B-CMT
dispersive I-CMT
spectrometry I-CMT
( O
EDS B-CMT
) O
, O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
. O


some O
factors O
influencing O
the O
formation O
of O
octahedral O
Fe4H3O15P3 B-MAT
microcrystals B-DSC
were O
systematically O
investigated O
, O
including O
the O
reaction O
temperature O
, O
time O
, O
and O
the O
molar O
ratio O
of O
Na2O3S B-MAT
/ O
AcH O
. O


thermoelectric B-PRO
power I-PRO
of O
cerium B-MAT
up O
to O
<nUm> O
GPa O


the O
thermoelectric B-PRO
power I-PRO
( O
TEP B-PRO
) O
of O
cerium B-MAT
has O
been O
measured O
up O
to O
<nUm> O
GPa O
. O


the O
results O
have O
been O
interpreted O
using O
the O
theories O
developed O
by O
blandin O
et. O
al. O
and O
hirst O
. O


large B-SMT
- I-SMT
strain I-SMT
deformation I-SMT
of O
Ni3Al+B B-MAT
: O
part O
III O
. O


microstructure B-PRO
, O
long B-PRO
- I-PRO
range I-PRO
order I-PRO
and O
mechanical B-PRO
properties I-PRO
of O
deformed B-SMT
and O
recrystallized B-SMT
Ni3Al+B B-MAT


the O
mechanical B-PRO
properties I-PRO
, O
yield B-PRO
- I-PRO
stress I-PRO
, O
hardening B-PRO
rate I-PRO
, O
microhardness B-PRO
and O
fracture B-PRO
of O
deformed B-SMT
, O
partially O
and O
fully O
recrystallized B-SMT
AlNi3 B-MAT
, O
doped B-DSC
with O
minor O
additions O
of O
boron B-MAT
, O
were O
studied O
. O


the O
change O
of O
long B-PRO
range I-PRO
order I-PRO
was O
investigated O
as O
a O
function O
of O
rolling B-SMT
as O
well O
as O
of O
annealing B-SMT
temperature O
. O


At O
incipient O
stages O
of O
recrystallization B-SMT
, O
an O
anomalous O
behaviour O
of O
the O
mechanical B-PRO
properties I-PRO
was O
observed O
. O


while O
the O
yield B-PRO
- I-PRO
stress I-PRO
decreased O
, O
the O
microhardness B-PRO
attained O
a O
maximum O
. O


the O
hardness B-PRO
increase O
is O
attributed O
to O
thermally B-PRO
activated I-PRO
dislocation I-PRO
locking I-PRO
, O
while O
the O
decrease O
of O
yield B-PRO
- I-PRO
stress I-PRO
is O
interpreted O
in O
terms O
of O
the O
arrangement O
of O
recrystallized B-SMT
grains B-PRO
along O
former O
microbands B-PRO
through O
the O
sample O
cross-section O
. O


the O
intermetallic B-PRO
compound O
Ni3Al+B B-MAT
can O
be O
partially O
disordered B-PRO
by O
cold B-SMT
rolling I-SMT
. O


the O
observed O
loss O
of O
long B-PRO
range I-PRO
order I-PRO
can O
not O
solely O
be O
explained O
by O
the O
dislocation B-PRO
density I-PRO
. O


it O
is O
proposed O
that O
microband B-PRO
formation O
is O
the O
main O
cause O
for O
the O
measured O
disordering B-PRO
of O
Ni3Al+B B-MAT
during O
cold B-SMT
rolling I-SMT
. O


high B-PRO
- I-PRO
pressure I-PRO
structural I-PRO
behaviour I-PRO
of O
Cr4CuFeS8 B-MAT
: O
an O
experimental O
and O
theoretical O
study O


the O
structural B-PRO
behaviour I-PRO
of O
Cr4CuFeS8 B-MAT
has O
been O
studied O
experimentally O
and O
theoretically O
at O
pressures O
up O
to O
44GPa O
. O


the O
experiments O
are O
supported O
by O
density B-CMT
functional I-CMT
calculations I-CMT
using O
the O
full B-CMT
- I-CMT
potential I-CMT
linear I-CMT
muffin I-CMT
- I-CMT
tin I-CMT
orbital I-CMT
method I-CMT
for O
investigating O
ground B-PRO
state I-PRO
properties I-PRO
and O
high B-PRO
- I-PRO
pressure I-PRO
behaviour I-PRO
. O


we O
report O
here O
the O
first O
experimental O
and O
theoretical O
determinations O
of O
the O
bulk B-PRO
modulus I-PRO
: O
B0 B-PRO
= O
<nUm> O
GPa O
and O
B B-PRO
<nUm> I-PRO
′ I-PRO
= O
<nUm> O
( O
experimental O
) O
, O
and O
B0 B-PRO
= O
<nUm> O
GPa O
and O
B B-PRO
<nUm> I-PRO
′ I-PRO
= O
<nUm> O
( O
calculated O
) O
. O


moreover O
, O
a O
pressure O
- O
induced O
structural B-PRO
and O
electronic B-PRO
phase I-PRO
transformation I-PRO
occurs O
at O
14.5GPa O
accompanied O
by O
a O
volume B-PRO
collapse I-PRO
of O
about O
<nUm> O
% O
. O


tentatively O
, O
the O
high B-PRO
- I-PRO
pressure I-PRO
phase I-PRO
is O
assigned O
the O
defect B-PRO
AsNi I-PRO
structure I-PRO
of O
Cr3S4 B-MAT
type O
with O
space O
group O
I2 B-SPL
/ I-SPL
m I-SPL
( I-SPL
<nUm> I-SPL
) I-SPL
. O


the O
mechanism O
of O
the O
phase B-PRO
transition I-PRO
is O
explained O
by O
a O
jahn B-PRO
– I-PRO
teller I-PRO
type I-PRO
distortion I-PRO
, O
associated O
with O
geometrical B-PRO
frustration I-PRO
and O
magnetic B-PRO
spin I-PRO
changes I-PRO
. O


influence O
of O
La2O3 B-MAT
/ O
OSr B-MAT
doping O
of O
O20SnTi5Zr4 B-MAT
ceramics B-DSC
on O
their O
sintering B-PRO
behavior I-PRO
and O
microwave B-PRO
dielectric I-PRO
properties I-PRO


the O
phase B-PRO
formation I-PRO
, O
microstructures B-PRO
, O
sintering B-PRO
behavior I-PRO
and O
microwave B-PRO
dielectric I-PRO
properties I-PRO
of O
O20SnTi5Zr4 B-MAT
( O
ZST B-MAT
) O
ceramics B-DSC
with O
diff O
– O
erent O
amounts O
of O
La2O3 B-MAT
/ O
OSr B-MAT
additives O
, O
fabricated O
by O
the O
conventional O
solid B-SMT
- I-SMT
state I-SMT
reaction I-SMT
route I-SMT
, O
were O
systematically O
investigated O
. O


single B-DSC
- I-DSC
phase I-DSC
orthorhombic B-SPL
crystalline B-PRO
structure I-PRO
was O
detected O
in O
the O
x-ray B-CMT
diffraction I-CMT
patterns O
, O
and O
the O
La2O3 B-MAT
/ O
OSr B-MAT
additives O
were O
found O
to O
effectively O
reduce O
the O
sintering B-SMT
temperature O
of O
ZST B-MAT
ceramics B-DSC
to O
<nUm> O
° O
C O
and O
improve O
the O
microwave B-PRO
dielectric I-PRO
properties I-PRO
as O
long O
as O
they O
were O
supplemented O
in O
the O
appropriate O
amount O
( O
0.25wt O
% O
La2O3 B-MAT
and O
0.5wt O
% O
OSr B-MAT
) O
. O


low O
cooling B-SMT
rate O
created O
significant O
improvement O
in O
the O
microwave B-PRO
dielectric I-PRO
properties I-PRO
of O
the O
ZST B-MAT
ceramics B-DSC
. O


A O
maximum O
q B-PRO
× I-PRO
f I-PRO
of O
<nUm> O
GHz O
( O
at O
5.6GHz O
) O
associated O
with O
an O
er B-PRO
of O
<nUm> O
and O
a O
tf B-PRO
of O
− O
<nUm> O
ppm O
/ O
° O
C O
was O
achieved O
for O
ZST B-MAT
ceramics B-DSC
with O
0.25wt O
% O
La2O3 B-MAT
and O
0.5wt O
% O
OSr B-MAT
sintered B-SMT
at O
<nUm> O
° O
C O
for O
5h O
. O


electronic B-PRO
band I-PRO
structure I-PRO
and O
magnetic B-PRO
effects I-PRO
in O
ternary O
Zr2(Ni1-xMx)1 B-MAT
glassy B-DSC
alloys I-DSC


the O
electronic B-PRO
and O
magnetic B-PRO
properties I-PRO
of O
the O
amorphous B-DSC
Zr2(Ni1-xMx)1 B-MAT
alloys I-MAT
( I-MAT
m I-MAT
= I-MAT
Ti I-MAT
, I-MAT
V I-MAT
, I-MAT
Cr I-MAT
, I-MAT
Mn I-MAT
, I-MAT
Fe I-MAT
, I-MAT
Co I-MAT
, I-MAT
Ni I-MAT
and I-MAT
Cu I-MAT
) I-MAT
have O
investigated O
in O
the O
temperature O
range O
from O
1.5K O
to O
300K O
. O


As O
for O
the O
other O
zr-3d O
glassy B-DSC
alloys I-DSC
( O
3d O
= O
Fe B-MAT
, O
Co B-MAT
, O
Cu B-MAT
or O
Ni B-MAT
) O
the O
temperature O
dependence O
of O
the O
electrical B-PRO
resistivity(T I-PRO
≥ O
20K O
) O
could O
be O
described O
in O
terms O
of O
the O
incipient B-PRO
electron I-PRO
localization I-PRO
. O


the O
new O
features O
are O
the O
pronounced O
variations O
of O
the O
magnetic B-PRO
and O
electron B-PRO
- I-PRO
transport I-PRO
properties I-PRO
with O
m O
. O


the O
origin O
of O
these O
variations O
are O
the O
systematic O
changes O
in O
the O
electronic B-PRO
band I-PRO
structure I-PRO
of O
the O
alloys B-DSC
on O
going O
from O
m O
= O
Cu B-MAT
towards O
m O
= O
Ti B-MAT
and O
the O
tendency O
to O
the O
formation O
of O
localized O
magnetic B-PRO
moments I-PRO
for O
m O
around O
the O
middle O
of O
3d-series O
( O
m O
= O
V B-MAT
, O
Cr B-MAT
, O
Mn B-MAT
and O
Fe B-MAT
) O
. O


the O
magnetic B-PRO
interactions I-PRO
strongly O
suppress O
the O
effects O
of O
the O
incipient B-PRO
localization I-PRO
. O


sputtering B-SMT
of O
Cu B-MAT
in O
a O
high O
pressure O
atmosphere O


the O
gas-flow-sputtering B-SMT
method O
, O
in O
which O
sputtered B-SMT
atoms O
were O
carried O
from O
the O
target O
to O
the O
substrate B-DSC
by O
Ar O
gas O
flow O
, O
gave O
a O
high O
deposition O
rate O
of O
Cu B-MAT
films B-DSC
in O
a O
high O
pressure O
( O
> O
<nUm> O
Torr O
) O
atmosphere O
. O


At O
the O
Ar O
pressures O
investigated O
, O
the O
sputtered B-SMT
atoms O
with O
high O
initial O
energies O
lost O
all O
their O
energy O
by O
thermalization O
before O
arriving O
at O
the O
substrate B-DSC
. O


the O
structures B-PRO
of O
Cu B-MAT
films B-DSC
formed O
from O
the O
thermalized O
vapor O
by O
this O
sputtering B-SMT
were O
examined O
and O
the O
effects O
of O
substrate B-DSC
bias O
on O
the O
structure B-PRO
were O
investigated O
. O


multi-phonon B-PRO
excitations I-PRO
in O
OZn B-MAT
textured B-DSC
crystalline I-DSC
films I-DSC
by O
raman B-CMT
spectroscopy I-CMT


perfect O
OZn B-MAT
crystalline B-DSC
films I-DSC
were O
prepared O
by O
magnetron B-SMT
sputtering I-SMT
. O


In O
the O
raman B-CMT
spectra O
of O
the O
films B-DSC
we O
observed O
from O
<nUm> O
to O
<nUm> O
phonon O
repetitions O
, O
similar O
to O
the O
bulk B-DSC
OZn B-MAT
crystal B-DSC
. O


the O
raman B-CMT
spectra O
were O
analyzed O
using O
a O
theory O
which O
takes O
into O
account O
many O
- O
particle O
interaction O
between O
electrons O
and O
phonons O
. O


our O
calculations O
show O
a O
rather O
good O
correlation O
with O
the O
experimental O
multi-phonon O
spectra O
and O
enable O
one O
to O
calculate O
correctly O
an O
important O
parameter O
of O
OZn B-MAT
films B-DSC
— O
the O
constant B-PRO
of I-PRO
electron I-PRO
– I-PRO
phonon I-PRO
coupling I-PRO
and O
accordingly O
to O
estimate O
the O
film B-DSC
quality O
. O


sputtering B-SMT
of O
ordered O
nickel B-MAT
- I-MAT
aluminium I-MAT
alloys B-DSC
II O
. O


preferential O
sputtering B-SMT
of O
AlNi B-MAT
single B-DSC
crystals I-DSC
and O
discussion O


atom B-CMT
- I-CMT
probe I-CMT
field I-CMT
- I-CMT
ion I-CMT
microscopy I-CMT
together O
with O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
and O
secondary B-CMT
ion I-CMT
mass I-CMT
spectrometry I-CMT
have O
been O
applied O
to O
the O
microanalysis O
of O
fully O
ordered O
AlNi B-MAT
single B-DSC
crystals I-DSC
subjected O
to O
<nUm> O
keV O
inert B-SMT
gas I-SMT
ion I-SMT
bombardment I-SMT
. O


As O
with O
the O
studies O
of O
AlNi3 B-MAT
( O
the O
companion O
paper O
) O
aluminium B-MAT
was O
found O
to O
be O
preferentially O
sputtered B-SMT
by O
both O
argon O
and O
xenon B-SMT
bombardment I-SMT
. O


comparisons O
between O
depth O
profiles O
through O
AlNi3 B-MAT
and O
AlNi B-MAT
targets O
have O
provided O
information O
about O
the O
role O
of O
binding B-PRO
energies I-PRO
in O
the O
selective B-SMT
sputtering I-SMT
process O
. O


these O
data O
have O
also O
permitted O
conclusions O
to O
be O
drawn O
about O
the O
correct O
choice O
of O
bombarding O
species O
for O
sample B-APL
cleaning I-APL
and O
depth B-APL
- I-APL
profiling I-APL
applications I-APL
in O
surface B-CMT
analysis I-CMT
. O


examination O
of O
field B-CMT
- I-CMT
ion I-CMT
images I-CMT
from O
specimens O
after O
bombardment B-SMT
suggests O
that O
the O
surface B-DSC
is O
microroughened O
and O
this O
has O
been O
confirmed O
using O
transmission B-CMT
electron I-CMT
microscopy I-CMT
. O


ordered O
HO4PPb B-MAT
nanowires B-DSC
: O
crystal B-PRO
structure I-PRO
, O
energy B-PRO
bands I-PRO
and O
optical B-PRO
properties I-PRO
from O
first B-CMT
principles I-CMT


structural B-PRO
, O
electronic B-PRO
and O
high B-PRO
- I-PRO
frequency I-PRO
dielectric I-PRO
properties I-PRO
of O
both O
the O
bulk B-DSC
crystal I-DSC
and O
the O
ordered O
nanostructured B-DSC
metamaterials B-APL
, O
nanolayers B-DSC
( O
NLs B-DSC
) O
and O
nanowires B-DSC
( O
NWs B-DSC
) O
of O
hydrogen O
- O
bonded O
HO4PPb B-MAT
are O
studied O
within O
the O
density B-CMT
functional I-CMT
theory I-CMT
. O


we O
have O
shown O
that O
all O
artificial O
structures O
considered O
by O
us O
may O
be O
equilibrated O
regarding O
the O
maximal O
forces O
acting O
on O
each O
atom O
up O
to O
the O
value O
not O
worse O
than O
<nUm> O
<nUm> O
eV O
/ O
Å O
. O


the O
monoclinic B-SPL
symmetry O
not O
higher O
than O
the O
symmetry O
of O
the O
bulk B-DSC
HO4PPb B-MAT
crystal B-DSC
, O
P2 B-SPL
/ I-SPL
c I-SPL
, O
is O
imposed O
both O
on O
each O
NL B-DSC
/ O
NW B-DSC
proper O
and O
on O
their O
mutual O
space O
arrangement O
. O


electronic B-PRO
band I-PRO
structure I-PRO
, O
density B-PRO
of I-PRO
states I-PRO
and O
partial B-PRO
densities I-PRO
of I-PRO
states I-PRO
, O
optical B-PRO
refractive I-PRO
indices I-PRO
and O
extinction B-PRO
coefficients I-PRO
have O
been O
calculated O
. O


we O
have O
displayed O
the O
evolution O
of O
electronic B-PRO
band I-PRO
properties I-PRO
going O
from O
the O
bulk B-DSC
single I-DSC
crystal I-DSC
to O
periodically O
ordered O
nanostructures B-DSC
, O
NLs B-DSC
and O
NWs B-DSC
. O


we O
have O
found O
significant O
anomalies O
in O
optical B-PRO
properties I-PRO
in O
visible O
and O
ultraviolet O
ranges O
of O
NWs B-DSC
studied O
in O
our O
research O
compared O
with O
those O
of O
bulk B-DSC
crystal I-DSC
. O


electronic B-PRO
structure I-PRO
and O
exchange B-PRO
interactions I-PRO
in O
B4Gd B-MAT


the O
electronic B-PRO
structure I-PRO
of O
the O
antiferromagnetic B-PRO
shastry B-CMT
– I-CMT
sutherland I-CMT
compound O
B4Gd B-MAT
has O
been O
analyzed O
with O
density B-CMT
functional I-CMT
theory I-CMT
and O
the O
all B-CMT
- I-CMT
electron I-CMT
full I-CMT
- I-CMT
potential I-CMT
linearized I-CMT
augmented I-CMT
- I-CMT
plane I-CMT
wave I-CMT
( O
FP B-CMT
- I-CMT
LAPW I-CMT
) O
code O
. O


different O
magnetic B-PRO
configurations I-PRO
, O
including O
the O
realistic O
dimer O
one O
, O
have O
been O
considered O
. O


the O
exchange B-PRO
interactions I-PRO
were O
found O
to O
be O
J B-PRO
<nUm> I-PRO
/ I-PRO
k I-PRO
B I-PRO
= O
-12 O
K O
and O
J B-PRO
<nUm> I-PRO
/ I-PRO
k I-PRO
B I-PRO
= O
− O
<nUm> O
– O
<nUm> O
K O
, O
where O
, O
J1 B-PRO
and O
J2 B-PRO
are O
the O
diagonal B-PRO
exchange I-PRO
interaction I-PRO
and O
the O
exchange B-PRO
interaction I-PRO
along O
the O
edges O
of O
a O
square O
, O
respectively O
. O


171Yb O
NMR B-CMT
in O
the O
kondo B-PRO
semiconductor I-PRO
B12Yb B-MAT


the O
171Yb O
nuclear B-CMT
magnetic I-CMT
resonance I-CMT
( O
NMR B-CMT
) O
is O
observed O
below O
10K O
in O
the O
single B-DSC
crystal I-DSC
of O
the O
kondo B-PRO
semiconductor I-PRO
B12Yb B-MAT
with O
the O
large O
shift O
of O
<nUm> O
% O
. O


the O
hyperfine B-PRO
coupling I-PRO
constant I-PRO
of O
<nUm> O
T O
/ O
mB O
agrees O
with O
the O
calculated O
value O
for O
the O
J B-PRO
= O
<nUm> O
<nUm> O
state O
of O
free O
yb3+ O
ions O
, O
indicating O
that O
the O
the O
magnetic B-PRO
susceptibility I-PRO
at O
the O
low O
- O
temperature O
( O
T O
) O
limit O
is O
the O
van B-PRO
vleck I-PRO
contribution I-PRO
within O
the O
J B-PRO
= O
<nUm> O
<nUm> O
multiplet O
. O


the O
nuclear B-PRO
spin I-PRO
– I-PRO
lattice I-PRO
relaxation I-PRO
rate I-PRO
at O
the O
Yb B-MAT
sites O
shows O
an O
activated O
temperature O
dependence O
below O
15K O
with O
the O
activation B-PRO
energy I-PRO
of O
<nUm> O
K O
, O
which O
however O
is O
completely O
different O
from O
the O
behavior O
at O
the O
B O
sites O
. O


A O
simple O
route O
to O
shape O
controlled O
CdS B-MAT
nanoparticles B-DSC


we O
report O
the O
synthesis O
of O
CdS B-MAT
nanoparticles B-DSC
in O
the O
form O
of O
spheres B-DSC
, O
triangles B-DSC
and O
wire B-DSC
- I-DSC
like I-DSC
structures B-PRO
. O


the O
method O
involves O
the O
reaction O
of O
reduced O
sulfur O
with O
a O
cadmium B-MAT
salt O
followed O
by O
thermolysis B-SMT
in O
hexadecylamine O
( O
HDA O
) O
. O


the O
different O
shapes O
were O
obtained O
by O
variation O
of O
reaction O
conditions O
such O
as O
reaction O
time O
, O
temperature O
and O
cadmium B-MAT
source O
. O


the O
optical B-CMT
studies I-CMT
show O
the O
particles B-DSC
to O
be O
quantum B-PRO
confined I-PRO
and O
luminescent B-PRO
at O
room O
temperature O
. O


the O
electronic B-PRO
structures I-PRO
and O
optical B-PRO
properties I-PRO
of O
GeO4Zn2 B-MAT
with O
native B-PRO
defects I-PRO


the O
electronic B-PRO
structures I-PRO
and O
optical B-PRO
properties I-PRO
of O
zinc B-MAT
germinate I-MAT
( O
GeO4Zn2 B-MAT
) O
with O
native B-PRO
defects I-PRO
are O
investigated O
by O
density B-CMT
functional I-CMT
theory I-CMT
. O


calculations O
reveal O
the O
existence O
of O
dipole B-PRO
moments I-PRO
which O
explains O
the O
photocatalytic B-PRO
activity I-PRO
. O


defect B-PRO
energy I-PRO
level I-PRO
induced O
by O
oxygen B-PRO
vacancy I-PRO
along O
with O
the O
unfulfilled O
Zn B-MAT
3d O
, O
are O
most O
responsible O
for O
luminescence B-PRO
. O


formation B-PRO
energy I-PRO
reveals O
the O
abundance O
of O
vacancy B-PRO
and O
can O
support O
the O
experimental O
correlation O
of O
emission B-PRO
intensity I-PRO
with O
oxygen B-PRO
vacancy I-PRO
density I-PRO
. O


optical B-PRO
indexes I-PRO
and O
absorption B-CMT
spectra I-CMT
are O
calculated O
by O
kramers B-CMT
– I-CMT
kronig I-CMT
relations I-CMT
. O


the O
calculations O
help O
understand O
better O
the O
nature O
of O
GeO4Zn2 B-MAT
that O
is O
beneficial O
for O
its O
various O
practical O
applications O
. O


microwave B-SMT
synthesis I-SMT
of O
magnetically B-PRO
separable I-PRO
Fe2O4Zn B-MAT
- O
reduced B-MAT
graphene I-MAT
oxide I-MAT
for O
wastewater B-APL
treatment I-APL


A O
magnetically B-PRO
separable I-PRO
Fe2O4Zn B-MAT
- O
reduced B-MAT
graphene I-MAT
oxide I-MAT
( O
rGO B-MAT
) O
nano-composite B-DSC
was O
synthesised O
via O
a O
microwave B-SMT
method I-SMT
. O


field B-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
images O
of O
the O
nano-composite B-DSC
showed O
a O
uniform O
dispersion O
of O
nanoparticles B-DSC
on O
the O
rGO B-MAT
sheets B-DSC
. O


the O
performance O
of O
the O
nano-composite B-DSC
in O
wastewater B-APL
treatment I-APL
was O
assessed O
by O
observing O
the O
decomposition O
of O
methylene O
blue O
. O


the O
nano-composite B-DSC
showed O
excellent O
bifunctionality B-PRO
, O
i.e. O
adsorption O
and O
photocatalytic B-APL
degradation I-APL
of O
methylene O
blue O
, O
for O
up O
to O
five O
cycles O
of O
water B-APL
treatment I-APL
when O
illuminated O
with O
light O
from O
a O
halogen O
bulb O
. O


In O
contrast O
, O
water B-APL
treatment I-APL
with O
the O
nano-composite B-DSC
without O
illumination O
and O
the O
illuminated O
rGO B-MAT
, O
with O
no O
decoration O
of O
nanoparticles B-DSC
, O
diminished O
significantly O
after O
the O
first O
treatment O
. O


the O
reclamation O
of O
the O
ZnFe2O4-rGO B-MAT
nano-composite B-DSC
from O
treated O
water O
could O
be O
easily O
achieved O
by O
applying O
an O
external O
magnetic O
field O
. O


the O
accelerating O
effect O
of O
high B-SMT
magnetic I-SMT
field I-SMT
annealing I-SMT
on O
the O
interdiffusion B-PRO
behavior I-PRO
of O
Co B-MAT
/ O
Ni B-MAT
films B-DSC


the O
effects O
of O
high B-SMT
magnetic I-SMT
field I-SMT
annealing I-SMT
on O
the O
interdiffusion O
of O
Co B-MAT
/ O
Ni B-MAT
bilayer B-DSC
films I-DSC
were O
investigated O
in O
this O
paper O
. O


A O
clear O
CoNi B-MAT
alloying O
zone O
can O
be O
observed O
by O
field B-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
and O
energy B-CMT
dispersive I-CMT
spectroscopy I-CMT
, O
for O
samples O
annealed B-SMT
with O
and O
without O
magnetic O
field O
. O


significant O
Co B-MAT
and O
Ni B-MAT
interdiffusion O
was O
verified O
by O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
. O


based O
on O
the O
thickness O
of O
the O
diffusion O
layer O
, O
the O
distribution O
of O
atoms O
and O
the O
microstructure B-PRO
of O
interfacial O
products O
, O
the O
interdiffusion B-PRO
coefficients I-PRO
of O
the O
bilayer B-DSC
diffusion O
couples O
were O
calculated O
. O


compared O
with O
the O
no O
- O
field O
case O
, O
the O
interdiffusion B-PRO
coefficient I-PRO
clearly O
increased O
when O
a O
high O
magnetic O
field O
of O
12T O
was O
applied O
. O


this O
effect O
can O
be O
attributed O
to O
an O
increase O
in O
the O
chemical B-PRO
potential I-PRO
gradient I-PRO
induced O
by O
magnetic B-PRO
free I-PRO
energy I-PRO
in O
a O
high O
magnetic O
field O
. O


the O
crystal B-PRO
structure I-PRO
of O
tl-b-alumina B-MAT


the O
crystal B-PRO
structure I-PRO
of O
Tl2O*11Al2O3 B-MAT
has O
been O
determined O
from O
three B-CMT
- I-CMT
dimensional I-CMT
x-ray I-CMT
data I-CMT
. O


the O
compound O
forms O
hexagonal B-SPL
crystals O
with O
a B-PRO
= O
<nUm> O
, O
c B-PRO
= O
<nUm> O
Å O
, O
and O
z B-PRO
= O
<nUm> O
in O
space O
group O
P63 B-SPL
mmc I-SPL
. O


the O
structure B-PRO
has O
been O
refined O
by O
least B-CMT
- I-CMT
squares I-CMT
methods I-CMT
with O
anisotropic B-PRO
temperature I-PRO
factors I-PRO
to O
an O
r O
value O
of O
<nUm> O
for O
<nUm> O
independent O
reflections O
collected O
by O
diffractometry B-CMT
. O


the O
crystal B-DSC
is O
composed O
of O
alternate O
stackings O
of O
the O
spinel B-SPL
block O
and O
the O
ion B-PRO
- I-PRO
conducting I-PRO
layer B-DSC
, O
both O
of O
which O
are O
linked O
together O
by O
the O
covalently O
bonded O
corner O
- O
sharing O
O3AlOAlO3 B-MAT
tetrahedra O
along O
the O
c-axis O
. O


the O
occupational O
percentages O
of O
the O
mobile O
ion O
were O
determined O
from O
the O
fourier B-CMT
synthesis I-CMT
and O
compared O
with O
those O
of O
ag- B-MAT
and O
na-b-alumina B-MAT
. O


high O
- O
quality O
O75Pb25Ti12Zr13 B-MAT
films B-DSC
prepared O
by O
modified O
sol B-SMT
– I-SMT
gel I-SMT
route O
at O
low O
temperature O


A O
modification O
of O
the O
methoxyethanol O
- O
based O
sol B-SMT
– I-SMT
gel I-SMT
route O
used O
for O
depositing O
high O
- O
quality O
O75Pb25Ti12Zr13 B-MAT
( O
PZT B-MAT
) O
films B-DSC
at O
low O
temperature O
is O
reported O
. O


the O
modification O
consists O
of O
multiple O
distillations O
of O
Pb B-MAT
precursor O
after O
dissolving O
in O
2-methoxyethanol O
and O
increasing O
the O
pyrolisis B-SMT
temperature O
after O
individual B-SMT
layer I-SMT
deposition I-SMT
. O


In O
addition O
, O
a O
large O
amount O
of O
OPb B-MAT
excess O
( O
<nUm> O
% O
) O
is O
used O
to O
maintain O
the O
stoichiometry B-PRO
of O
PZT B-MAT
films B-DSC
. O


As O
a O
result O
, O
the O
films B-DSC
processed O
at O
<nUm> O
° O
C O
possess O
a O
dielectric B-PRO
permittivity I-PRO
of O
∼ O
<nUm> O
, O
a O
remanent B-PRO
polarization I-PRO
of O
∼ O
<nUm> O
mC O
/ O
cm2 O
and O
a O
coercive B-PRO
field I-PRO
of O
∼ O
<nUm> O
kV O
/ O
cm O
. O


the O
crystallization B-PRO
mechanism I-PRO
is O
discussed O
along O
with O
the O
possible O
applications O
of O
such O
films B-DSC
in O
microelectromechanical B-APL
systems I-APL
. O


direct O
combination O
of O
plasma B-SMT
nitriding I-SMT
and O
PVD B-SMT
hardcoating I-SMT
by O
a O
continuous O
process O


the O
properties O
obtained O
by O
the O
conbination O
of O
nitriding B-SMT
with O
hardcoating B-SMT
allows O
a O
function O
sharing O
among O
core O
material O
, O
hardened O
case O
and O
surface B-DSC
. O


such O
combined O
properties O
are O
of O
interest O
for O
the O
application O
in O
complex B-APL
stressed I-APL
tools I-APL
and O
machine B-APL
components I-APL
. O


the O
precondition O
of O
a O
succesful O
combination O
of O
nitrided B-SMT
steels B-MAT
with O
a O
hardcoating B-SMT
is O
especially O
the O
compatibility O
of O
the O
structure O
and O
the O
properties O
of O
the O
nitrided B-SMT
layer B-DSC
and O
the O
coating B-APL
, O
but O
also O
the O
technological O
and O
economic O
aspects O
of O
the O
production O
of O
such O
composites B-DSC
. O


for O
example O
, O
a O
discontinuous O
combination O
of O
nitriding B-SMT
and O
hardcoating B-SMT
has O
some O
disadvantages O
, O
if O
no O
external O
intermediate O
treatment O
is O
provided O
. O


A O
commercial O
ion B-SMT
- I-SMT
plating I-SMT
equipment O
( O
TINA O
<nUm> O
) O
was O
modified O
to O
realize O
a O
continuous O
process O
of O
pulse B-SMT
plasma I-SMT
nitriding I-SMT
and O
NTi B-MAT
hardcoating B-SMT
in O
one O
and O
the O
same O
equipment O
on O
various O
steel B-MAT
grades O
. O


special O
consideration O
was O
given O
to O
the O
investigation O
of O
the O
composite B-DSC
properties O
such O
as O
adhesion B-PRO
, O
structure B-PRO
, O
hardness B-PRO
and O
residual B-PRO
stress I-PRO
as O
well O
as O
the O
tribological B-PRO
behaviour I-PRO
in O
dependence O
on O
the O
process O
parameters O
. O


the O
results O
of O
the O
plasma B-SMT
nitriding I-SMT
in O
the O
modified O
cold B-SMT
- I-SMT
wall I-SMT
reactor I-SMT
are O
comparable O
to O
those O
of O
nitriding B-SMT
in O
a O
hot B-SMT
- I-SMT
wall I-SMT
plant I-SMT
. O


the O
hardness B-PRO
and O
wear B-PRO
resistance I-PRO
increases O
. O


the O
hardcoating B-SMT
of O
the O
nitrided B-SMT
substrates B-DSC
leads O
to O
an O
increased O
adhesion B-PRO
by O
deposition O
of O
a O
thin B-DSC
Ti B-MAT
or O
Ti B-MAT
- I-MAT
TiNx I-MAT
intermediate B-DSC
layer I-DSC
. O


trapped O
holes O
in O
silver B-MAT
halides I-MAT


the O
properties O
of O
holes O
in O
silver B-MAT
halides I-MAT
are O
reviewed O
with O
emphasis O
on O
trapped O
holes O
. O


the O
chemical B-PRO
and O
electronic B-PRO
structure I-PRO
of O
the O
self O
- O
trapped O
hole O
in O
AgCl B-MAT
has O
been O
well O
documented O
. O


In O
contrast O
, O
the O
nature O
of O
the O
intrinsic O
hole O
trap O
in O
AgBr B-MAT
is O
still O
speculative O
and O
could O
benefit O
from O
more O
experimentation O
. O


A O
variety O
of O
trapped O
- O
hole O
species O
, O
induced O
by O
doping O
of O
the O
silver B-MAT
halides I-MAT
, O
have O
been O
identified O
. O


magnetic B-CMT
resonance I-CMT
methods I-CMT
have O
been O
the O
most O
successful O
techniques O
for O
elucidating O
the O
structure O
of O
these O
defects O
. O


little O
is O
known O
about O
holes O
trapped O
in O
AgF B-MAT
and O
AgI B-MAT
or O
in O
many O
of O
the O
mixed O
halide B-MAT
crystals B-DSC
. O


compressive B-PRO
and O
fatigue B-PRO
behavior I-PRO
of O
beta-type B-SMT
titanium B-MAT
porous B-DSC
structures O
fabricated O
by O
electron B-SMT
beam I-SMT
melting I-SMT


b-type B-SPL
titanium B-MAT
porous B-DSC
structure O
is O
a O
new O
class O
of O
solution O
for O
implant B-APL
because O
it O
offers O
excellent O
combinations O
of O
high O
strength B-PRO
and O
low O
young B-PRO
's I-PRO
modulus I-PRO
. O


this O
work O
investigated O
the O
influence O
of O
porosity B-PRO
variation O
in O
electron B-SMT
beam I-SMT
melting I-SMT
(EBM)-produced I-SMT
b-type B-SPL
ti2448 B-MAT
alloy B-DSC
samples O
on O
the O
mechanical B-PRO
properties I-PRO
including O
super-elastic B-PRO
property I-PRO
, O
young B-PRO
's I-PRO
modulus I-PRO
, O
compressive B-PRO
strength I-PRO
and O
fatigue B-PRO
properties I-PRO
. O


the O
relationship O
between O
the O
misorientation B-PRO
angle I-PRO
of O
adjacent O
grains O
and O
fatigue B-PRO
crack I-PRO
deflection I-PRO
behaviors I-PRO
was O
also O
observed O
. O


the O
super-elastic B-PRO
property I-PRO
is O
improved O
as O
the O
porosity B-PRO
of O
samples O
increases O
because O
of O
increasing O
tensile B-PRO
/ I-PRO
compressive I-PRO
ratio I-PRO
. O


for O
the O
first O
time O
, O
the O
position O
of O
fatigue B-PRO
crack I-PRO
initiation I-PRO
is O
defined O
in O
stress B-CMT
- I-CMT
strain I-CMT
curves I-CMT
based O
on O
the O
variation O
of O
the O
fatigue B-CMT
cyclic I-CMT
loops I-CMT
. O


the O
unique O
manufacturing O
process O
of O
EBM B-SMT
results O
in O
the O
generation O
of O
different O
sizes O
of O
grains O
, O
and O
the O
apparent O
fatigue B-PRO
crack I-PRO
deflection I-PRO
occurs O
at O
the O
grain B-PRO
boundaries I-PRO
in O
the O
columnar O
grain O
zone O
due O
to O
substantial O
misorientation O
between O
adjacent O
grains O
. O


compared O
with O
Ti-6Al-4V B-MAT
samples O
, O
the O
ti2448 B-MAT
porous B-DSC
samples O
exhibit O
a O
higher O
normalized O
fatigue B-PRO
strength I-PRO
owing O
to O
super-elastic B-PRO
property I-PRO
, O
greater O
plastic B-PRO
zone I-PRO
ahead O
of O
the O
fatigue B-PRO
crack I-PRO
tip I-PRO
and O
the O
crack B-PRO
deflection I-PRO
behavior I-PRO
. O


preparation O
of O
p B-PRO
- I-PRO
type I-PRO
AgCrO2 B-MAT
nanocrystals B-DSC
through O
low B-SMT
- I-SMT
temperature I-SMT
hydrothermal I-SMT
method I-SMT
and O
the O
potential O
application O
in O
p B-PRO
- I-PRO
type I-PRO
dye B-APL
- I-APL
sensitized I-APL
solar I-APL
cell I-APL


the O
synthesis O
of O
nano-sized B-DSC
ternary I-DSC
delafossite B-SPL
oxides B-MAT
with O
pure O
crystal B-PRO
phases I-PRO
is O
of O
great O
challenge O
. O


we O
present O
a O
novel O
hydrothermal B-SMT
method I-SMT
for O
the O
synthesis O
of O
AgCrO2 B-MAT
nanocrystals B-DSC
with O
ultrafine O
size O
of O
<nUm> O
– O
<nUm> O
nm O
at O
relatively O
low O
temperature O
range O
( O
<nUm> O
– O
<nUm> O
° O
C O
) O
. O


it O
is O
the O
first O
time O
to O
report O
that O
AgCrO2 B-MAT
nanocrystals B-DSC
can O
be O
hydrothermally B-SMT
synthesized O
at O
such O
a O
low O
temperature O
( O
<nUm> O
° O
C O
) O
and O
applied O
as O
photocathode B-APL
in O
dye B-APL
sensitized I-APL
solar I-APL
cells I-APL
( O
DSSCs B-APL
) O
. O


the O
as-synthesized B-DSC
AgCrO2 B-MAT
nanoproducts B-DSC
, O
including O
their O
crystal B-PRO
phases I-PRO
, O
morphologies B-PRO
, O
element B-PRO
compositions I-PRO
, O
valence B-PRO
state I-PRO
information I-PRO
, O
thermal B-PRO
stability I-PRO
, O
electrical B-PRO
and O
optical B-PRO
properties I-PRO
, O
have O
been O
systematically O
studied O
. O


this O
facile O
method O
employed O
metal O
nitrates O
( O
AgNO3 B-MAT
and O
CrN3O9 B-MAT
) O
as O
the O
starting O
materials O
and O
HNaO O
as O
the O
mineralizer O
, O
where O
CrN3O9 B-MAT
undertook O
the O
dual O
functions O
of O
cr3+ O
source O
material O
and O
weak O
reducing O
reagent O
. O


the O
in-situ O
oxidation O
– O
reduction O
reaction O
between O
cr3+ O
and O
ag+ O
/ O
cu2+ O
during O
the O
hydrothermal B-SMT
crystal O
growth O
is O
the O
noteworthy O
feature O
of O
this O
general O
method O
. O


the O
crystal B-PRO
formation I-PRO
mechanism I-PRO
disclosed O
in O
the O
synthesis O
of O
chromium B-MAT
based O
delafossite B-SPL
oxides B-MAT
will O
certainly O
be O
benefit O
for O
the O
preparation O
of O
other O
delafossite B-SPL
oxides B-MAT
. O


magnetic B-PRO
and O
transport B-PRO
studies O
of O
the O
antiferromagnetic B-PRO
kondo I-PRO
lattice I-PRO
CePtSn B-MAT


CePtSn B-MAT
has O
been O
studied O
by O
means O
of O
neutron B-CMT
scattering I-CMT
, O
electrical B-CMT
resistivity I-CMT
and O
magnetic B-CMT
susceptibility I-CMT
measurements O
. O


refinement O
of O
neutron B-CMT
powder I-CMT
diffraction I-CMT
data O
showed O
the O
crystal B-PRO
structure I-PRO
to O
be O
of O
the O
orthorhombic B-SPL
NiSiTi B-MAT
- O
type O
. O


magnetic B-PRO
susceptibility I-PRO
measurements O
revealed O
the O
presence O
of O
two O
antiferromagnetic B-PRO
phase I-PRO
transitions I-PRO
at O
<nUm> O
and O
<nUm> O
K O
respectively O
. O


inelastic B-CMT
neutron I-CMT
scattering I-CMT
showed O
two O
well O
defined O
crystal B-PRO
field I-PRO
excitations I-PRO
at O
<nUm> O
and O
<nUm> O
meV O
. O


the O
temperature O
dependence O
of O
the O
resistivity B-PRO
can O
be O
understood O
as O
arising O
from O
the O
kondo B-PRO
effect I-PRO
in O
the O
presence O
of O
crystal O
fields O
. O


elastic B-PRO
, O
structural B-PRO
, O
bonding B-PRO
, O
and O
defect B-PRO
properties I-PRO
of O
zinc B-SPL
- I-SPL
blende I-SPL
BN B-MAT
, O
AlN B-MAT
, O
GaN B-MAT
, O
InN B-MAT
and O
their O
alloys B-DSC


simple O
tight B-CMT
- I-CMT
binding I-CMT
simulations I-CMT
, O
incorporating O
only O
the O
herman B-PRO
– I-PRO
skillman I-PRO
atomic I-PRO
term I-PRO
values O
, O
are O
shown O
to O
provide O
valuable O
information O
about O
the O
bonding B-PRO
, O
elastic B-PRO
and O
structural B-PRO
properties I-PRO
of O
zinc B-SPL
- I-SPL
blende I-SPL
group O
III O
- O
nitrides B-MAT
. O


our O
calculated O
values O
of O
the O
elastic B-PRO
parameters I-PRO
( O
viz. O
, O
bulk B-PRO
modulus I-PRO
, O
elastic B-PRO
stiffness I-PRO
constants I-PRO
, O
kleinman B-PRO
's I-PRO
internal I-PRO
displacement I-PRO
parameter I-PRO
, O
keating B-PRO
force I-PRO
constants I-PRO
, O
etc. O
) O
for O
BN B-MAT
, O
AlN B-MAT
, O
GaN B-MAT
, O
and O
InN B-MAT
are O
shown O
to O
exist O
well O
within O
the O
range O
of O
values O
derived O
from O
more O
sophisticated O
methods O
. O


despite O
the O
crude O
approximations O
used O
, O
the O
tight B-CMT
- I-CMT
binding I-CMT
method I-CMT
has O
clearly O
provided O
the O
meaningful O
trends O
to O
the O
local B-PRO
distortions I-PRO
around O
isoelectronic O
impurities O
and O
has O
described O
reasonably O
well O
the O
bond B-PRO
length I-PRO
variations O
as O
a O
function O
of O
composition B-PRO
in O
ternary O
alloys B-DSC
. O


investigation O
of O
the O
electronic B-PRO
structure I-PRO
of O
the O
cubic B-SPL
spinel I-SPL
Cu6Mn9O20 B-MAT
using O
electron B-CMT
energy I-CMT
loss I-CMT
spectroscopy I-CMT


the O
room O
temperature O
cation B-PRO
valency I-PRO
distribution I-PRO
in O
the O
single B-DSC
- I-DSC
phase I-DSC
cubic B-SPL
spinel I-SPL
Cu6Mn9O20 B-MAT
was O
extracted O
using O
EELS B-CMT
. O


analysis O
of O
the O
Cu B-MAT
and O
Mn B-MAT
L2,3 B-PRO
core I-PRO
- I-PRO
loss I-PRO
edges I-PRO
revealed O
that O
all O
Cu B-MAT
was O
present O
as O
cu2+ O
and O
that O
a O
multi-valent O
Mn B-MAT
ground O
state O
existed O
with O
the O
valence B-PRO
fractions I-PRO
: O
<nUm> O
% O
mn4+ O
, O
<nUm> O
% O
mn3+ O
and O
<nUm> O
% O
mn2+ O
. O


the O
pre-peak O
of O
the O
ELNES B-CMT
on O
the O
O O
– O
K O
edge O
confirmed O
the O
dominant O
mn4+ O
component O
whilst O
the O
features O
in O
the O
ELNES B-CMT
are O
identical O
to O
those O
observed O
in O
other O
spinel B-SPL
compounds O
. O


influence O
of O
rapid B-SMT
thermal I-SMT
annealing I-SMT
on O
electrical B-PRO
and O
structural B-PRO
properties I-PRO
of O
Pd B-MAT
/ O
Au B-MAT
schottky B-APL
contact I-APL
to O
Ga B-MAT
- O
polarity B-PRO
GaN B-MAT
grown O
on O
Si B-MAT
( O
<nUm> O
) O
substrate B-DSC


we O
studied O
the O
effect O
of O
high O
temperature O
rapid B-SMT
thermal I-SMT
annealing I-SMT
on O
the O
electrical B-PRO
and O
structural B-PRO
properties I-PRO
of O
Pd B-MAT
/ O
Au B-MAT
schottky B-APL
contact I-APL
to O
Ga B-MAT
- O
polarity B-PRO
GaN B-MAT
grown O
by O
MBE B-SMT
on O
p-Si B-MAT
substrate B-DSC
. O


current B-CMT
- I-CMT
voltage I-CMT
( O
I-V B-CMT
) O
, O
capacitance B-CMT
- I-CMT
voltage I-CMT
( O
C-V B-CMT
) O
, O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
, O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
measurements O
are O
performed O
for O
the O
electrical B-PRO
and O
structural B-PRO
characterization O
of O
the O
schottky B-APL
diode I-APL
. O


it O
has O
been O
observed O
that O
there O
is O
a O
significant O
improvement O
in O
barrier B-PRO
height I-PRO
and O
ideality B-PRO
factor I-PRO
with O
reduction O
in O
leakage B-PRO
current I-PRO
upon O
annealing B-SMT
. O


the O
estimated O
schottky B-PRO
barrier I-PRO
height I-PRO
( O
phB0 B-PRO
) O
for O
the O
as-deposited B-DSC
contact B-APL
is O
<nUm> O
eV O
( O
I-V B-CMT
) O
and O
<nUm> O
eV O
( O
C-V B-CMT
) O
. O


while O
, O
the O
extracted O
barrier B-PRO
height I-PRO
for O
<nUm> O
° O
C O
annealed B-SMT
contact B-APL
is O
improved O
to O
<nUm> O
eV O
( O
I-V B-CMT
) O
and O
<nUm> O
eV O
( O
C-V B-CMT
) O
. O


In O
addition O
, O
the O
surface B-PRO
state I-PRO
density I-PRO
is O
calculated O
using O
C-V B-CMT
and O
it O
is O
found O
that O
there O
is O
ten O
time O
reduction O
in O
surface B-PRO
state I-PRO
density I-PRO
for O
<nUm> O
° O
C O
annealed B-SMT
Pd B-MAT
/ O
Au B-MAT
schottky B-APL
contact I-APL
compared O
to O
the O
as-deposited B-DSC
schottky B-APL
contact I-APL
to O
semiconductor B-PRO
. O


x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
depth O
profile O
results O
showed O
that O
there O
is O
out O
diffusion O
of O
Ga B-MAT
into O
metal O
film B-DSC
which O
may O
have O
formed O
metal O
- O
gallide O
phases O
for O
the O
annealed B-SMT
schottky B-APL
contacts I-APL
that O
was O
confirmed O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
results O
. O


it O
implies O
a O
reduction O
in O
nitrogen O
related O
vacancies O
and O
dangling O
bonds O
associated O
with O
GaN B-MAT
, O
which O
could O
be O
the O
reason O
for O
increase O
in O
the O
schottky B-PRO
barrier I-PRO
height I-PRO
. O


moreover O
, O
the O
surface B-PRO
morphology I-PRO
of O
the O
contacts B-APL
is O
analysed O
by O
atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
and O
it O
is O
found O
that O
the O
surface B-PRO
roughness I-PRO
of O
schottky B-APL
contact I-APL
does O
not O
degraded O
upon O
annealing B-SMT
. O


this O
indicates O
that O
the O
contacts B-APL
were O
thermally B-PRO
stable I-PRO
during O
annealing B-SMT
. O


synthesis O
, O
growth O
and O
characterization O
of O
AgInSe2 B-MAT
single B-DSC
crystals I-DSC


single B-DSC
crystal I-DSC
of O
the O
ternary O
semi-conductor B-PRO
AgInSe2 B-MAT
has O
been O
grown O
by O
bridgman B-SMT
technique I-SMT
. O


the O
AgInSe2 B-MAT
crystal B-DSC
crystallizes O
in O
the O
tetragonal B-SPL
chalcopyrite I-SPL
structure O
. O


using O
melt B-SMT
temperature I-SMT
oscillation I-SMT
method I-SMT
polycrystalline B-DSC
charge O
was O
synthesized O
. O


the O
synthesized O
charge O
was O
subjected O
to O
powder B-DSC
x-ray B-CMT
diffraction I-CMT
analysis O
. O


thermal B-PRO
property I-PRO
of O
AgInSe2 B-MAT
was O
analyzed O
using O
differential B-CMT
scanning I-CMT
calorimetry I-CMT
( O
DSC B-CMT
) O
technique O
. O


the O
melting B-PRO
and O
solidification B-PRO
temperature I-PRO
is O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
respectively O
. O


the O
synthesized O
polycrystalline B-DSC
charge O
was O
employed O
to O
grow O
AgInSe2 B-MAT
single B-DSC
crystals I-DSC
. O


the O
grown O
crystal B-DSC
was O
confirmed O
by O
single B-DSC
crystal I-DSC
x-ray B-CMT
diffraction I-CMT
. O


the O
crystal B-DSC
exhibits O
<nUm> O
% O
transmission B-PRO
in O
the O
infrared O
region O
. O


the O
stoichiometric B-PRO
composition I-PRO
of O
AgInSe2 B-MAT
was O
confirmed O
by O
energy B-CMT
dispersive I-CMT
x-ray I-CMT
analysis I-CMT
( O
EDAX B-CMT
) O
. O


the O
electrical B-PRO
properties I-PRO
of O
the O
crystal B-DSC
were O
studied O
by O
hall B-CMT
effect I-CMT
measurements I-CMT
and O
photoconductivity B-PRO
. O


surface B-PRO
vibrational I-PRO
thermodynamics I-PRO
from O
ab B-CMT
initio I-CMT
calculations I-CMT
for O
fcc(100) B-SPL


we O
present O
vibrational B-PRO
dynamics I-PRO
and O
thermodynamics B-PRO
for O
the O
( O
<nUm> O
) O
surfaces B-DSC
of O
Cu B-MAT
, O
Ag B-MAT
, O
Pd B-MAT
, O
Pt B-MAT
and O
Au B-MAT
using O
a O
real B-CMT
space I-CMT
approach I-CMT
. O


the O
force O
field O
for O
these O
systems O
is O
described O
by O
density B-CMT
functional I-CMT
theory I-CMT
. O


the O
changes O
in O
the O
vibrational B-PRO
dynamics I-PRO
and O
thermodynamics B-PRO
from O
those O
in O
bulk B-DSC
are O
confined O
mostly O
to O
the O
first O
- O
layer B-DSC
. O


A O
substantial O
enhancement O
of O
the O
low O
- O
frequency O
end O
of O
the O
acoustic B-PRO
branch I-PRO
was O
found O
and O
is O
related O
to O
a O
loosening O
of O
the O
bond O
at O
the O
surface B-DSC
. O


the O
thermodynamics B-PRO
of O
the O
first O
- O
layer B-DSC
also O
show O
significant O
differences O
( O
higher O
heat B-PRO
capacity I-PRO
, O
lower O
free B-PRO
energy I-PRO
and O
higher O
mean B-PRO
vibrational I-PRO
square I-PRO
amplitudes I-PRO
) O
from O
what O
obtains O
in O
bulk B-DSC
. O


comparing O
these O
results O
with O
those O
calculated O
using O
embedded B-CMT
- I-CMT
atom I-CMT
method I-CMT
potentials I-CMT
, O
we O
discovered O
that O
for O
Ag(100) B-MAT
and O
Cu(100) B-MAT
, O
the O
two O
methods O
yield O
very O
similar O
results O
while O
for O
Pd(100) B-MAT
, O
Pt(100) B-MAT
and O
Au(100) B-MAT
there O
are O
substantial O
differences O
. O


electronic B-PRO
structure I-PRO
and O
transport B-PRO
properties I-PRO
of O
K B-MAT
- O
doped B-DSC
blue O
bronze O
K3Mo20O60Rb3 B-MAT


single B-DSC
crystals I-DSC
of O
K B-MAT
- O
doped B-DSC
blue O
bronze O
K3Mo20O60Rb3 B-MAT
and O
Mo10O30Rb3 B-MAT
have O
been O
investigated O
by O
measurements O
of O
the O
x-ray B-CMT
photoemission I-CMT
spectrum O
( O
XPS B-CMT
) O
, O
electrical B-PRO
resistivity I-PRO
and O
thermoelectric B-PRO
power I-PRO
, O
respectively O
. O


analysis O
of O
the O
XPS B-CMT
data O
reveals O
that O
two O
final O
states O
representing O
alternate O
screening O
channels O
coexist O
in O
K3Mo20O60Rb3 B-MAT
. O


compared O
with O
the O
pure O
bronze O
, O
the O
Mo B-MAT
sites O
of O
the O
doped B-DSC
sample O
contain O
less O
4d O
electrons O
which O
reflected O
in O
the O
movement O
of O
mo3d O
spectrum O
. O


due O
to O
the O
discrepancy O
of O
electronic B-PRO
structure I-PRO
, O
the O
K B-MAT
ion O
doping B-SMT
results O
in O
the O
notable O
increase O
of O
the O
single B-PRO
particle I-PRO
activation I-PRO
energy I-PRO
and O
decrease O
of O
the O
thermoelectric B-PRO
power I-PRO
in O
the O
charge B-PRO
density I-PRO
wave I-PRO
state I-PRO
. O


improved O
electrochemical B-PRO
properties I-PRO
of O
single B-DSC
crystalline I-DSC
NiO B-MAT
nanoflakes B-DSC
for O
lithium B-APL
storage I-APL
and O
oxygen B-APL
electroreduction I-APL


A O
facile O
strategy O
has O
been O
developed O
to O
realize O
the O
controllable O
synthesis O
of O
single B-DSC
crystalline I-DSC
NiO B-MAT
nanoflakes B-DSC
. O


according O
to O
the O
SEM B-CMT
, O
TEM B-CMT
and O
BET B-CMT
analysis O
, O
it O
was O
found O
that O
the O
m-NiO B-MAT
nanoflakes B-DSC
have O
a O
hexagonal B-SPL
structure O
with O
an O
average O
pore B-PRO
diameter I-PRO
of O
<nUm> O
nm O
, O
and O
exhibit O
a O
high O
surface B-PRO
area I-PRO
of O
<nUm> O
m2 O
g-1 O
and O
a O
pore B-PRO
volume I-PRO
around O
<nUm> O
cm3 O
g-1 O
. O


the O
m-NiO B-MAT
nanoflakes B-DSC
exhibit O
a O
significantly O
improved O
electrochemical B-PRO
performance I-PRO
as O
an O
anode B-APL
of O
lithium B-APL
- I-APL
ion I-APL
batteries I-APL
( O
LIBs B-APL
) O
compared O
with O
bulk B-DSC
NiO B-MAT
based O
on O
cyclic B-CMT
voltammograms I-CMT
and O
galvanostatic B-CMT
measurement I-CMT
. O


additionally O
, O
the O
m-NiO B-MAT
nanoflakes B-DSC
showed O
remarkable O
advanced O
activity B-PRO
for O
catalyzing B-APL
oxygen I-APL
reduction I-APL
reaction I-APL
( O
ORR B-APL
) O
relative O
to O
the O
bulk B-DSC
NiO B-MAT
electrode B-APL
and O
the O
bare O
electrode B-APL
. O


further O
, O
rotating B-APL
disk I-APL
electrodes I-APL
demonstrated O
that O
the O
m-NiO B-MAT
nanoflakes B-DSC
, O
as O
the O
support O
of O
the O
Pt B-MAT
nanoparticles B-DSC
, O
shows O
significantly O
improved O
activity B-PRO
for O
ORRs B-APL
. O


mode O
gruneisen B-PRO
parameters I-PRO
and O
thermal B-PRO
expansion I-PRO
of O
sodium B-MAT
nitrate I-MAT


using O
the O
generalised B-CMT
gruneisen I-CMT
theory I-CMT
in O
the O
quasiharmonic B-CMT
approximation I-CMT
, O
the O
low O
and O
high O
temperature O
limiting O
values O
of O
the O
generalised O
gruneisen B-PRO
parameters I-PRO
have O
been O
computed O
from O
the O
measured O
second O
- O
and O
calculated O
third B-PRO
- I-PRO
order I-PRO
elastic I-PRO
constants I-PRO
. O


the O
relevance O
of O
these O
calculations O
to O
the O
thermal B-PRO
expansion I-PRO
of O
sodium B-MAT
nitrate I-MAT
is O
discussed O
. O


novel O
synthesis O
of O
highly O
ordered B-PRO
mesoporous B-DSC
Fe2O3 B-MAT
/ O
O2Si B-MAT
nanocomposites B-DSC
for O
a O
room O
temperature O
VOC B-APL
sensor I-APL


the O
controlled O
synthesis O
of O
mesoporous B-DSC
silica B-MAT
and O
metal B-MAT
oxide I-MAT
nanocomposites B-DSC
with O
a O
highly O
ordered O
porous B-DSC
structure B-PRO
and O
large O
specific B-PRO
surface I-PRO
area I-PRO
for O
specific O
applications O
has O
been O
an O
attractive O
topic O
in O
the O
field O
of O
porous B-DSC
materials O
. O


herein O
, O
we O
introduce O
a O
novel O
method O
for O
the O
fabrication O
of O
highly O
ordered B-PRO
mesoporous B-DSC
structured O
and O
large O
specific B-PRO
surface I-PRO
area I-PRO
Fe2O3 B-MAT
/ O
O2Si B-MAT
nanocomposites B-DSC
, O
and O
consider O
their O
application O
in O
room B-APL
temperature I-APL
gas I-APL
sensors I-APL
. O


the O
mesoporous B-DSC
Fe2O3 B-MAT
/ O
O2Si B-MAT
nanocomposites B-DSC
were O
synthesised O
by O
a O
two B-SMT
- I-SMT
step I-SMT
method I-SMT
, O
which O
combines O
the O
hydrothermal B-SMT
growth I-SMT
of O
Fe2O3 B-MAT
nanoparticles B-DSC
and O
the O
microemulsion B-DSC
phase O
of O
brij O
<nUm> O
( O
C16EO10 O
) O
surfactant O
as O
templates O
in O
instantly B-SMT
direct I-SMT
- I-SMT
templating I-SMT
synthesis I-SMT
. O


this O
synthesis O
method O
enables O
the O
fabrication O
of O
mesoporous B-DSC
Fe2O3 B-MAT
/ O
O2Si B-MAT
nanocomposites B-DSC
without O
distortion O
of O
the O
ordered O
porous B-DSC
structure B-PRO
after O
calcination B-SMT
at O
high O
temperature O
. O


the O
synthesised O
materials O
were O
found O
to O
be O
efficient O
in O
a O
room B-APL
temperature I-APL
VOC I-APL
sensor I-APL
application O
, O
with O
good O
recovery B-PRO
. O


primary O
crystallization O
in O
Al B-MAT
- O
rich O
metallic B-PRO
glasses I-PRO
at O
unusually O
low O
temperatures O


the O
initial O
stage O
of O
the O
primary O
crystallization O
reaction O
and O
the O
glass B-PRO
transition I-PRO
of O
the O
marginal O
metallic B-PRO
glass I-PRO
Al89Fe5Y6 B-MAT
were O
investigated O
by O
conventional O
differential B-CMT
scanning I-CMT
calorimetry I-CMT
( O
DSC B-CMT
) O
and O
modulated B-CMT
differential I-CMT
scanning I-CMT
calorimetry I-CMT
( O
MDSC B-CMT
) O
, O
microcalorimetry B-CMT
, O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
. O


A O
sharp O
onset O
of O
the O
primary O
crystallization O
was O
found O
by O
microcalorimetry B-CMT
and O
XRD B-CMT
studies O
at O
temperatures O
which O
were O
<nUm> O
° O
C O
below O
the O
primary O
crystallization O
peak O
observed O
in O
conventional O
DSC B-CMT
. O


A O
systematic O
MDSC B-CMT
study O
of O
annealed B-SMT
samples O
revealed O
a O
wide O
spectrum O
of O
glass B-PRO
transition I-PRO
onsets O
, O
which O
show O
a O
strong O
dependence O
on O
the O
annealing B-SMT
conditions O
. O


In O
addition O
, O
the O
glass B-PRO
transition I-PRO
onsets O
can O
be O
linked O
to O
the O
initial O
stage O
of O
the O
primary O
crystallization O
. O


the O
spectrum O
of O
glass B-PRO
transition I-PRO
onsets O
observed O
is O
discussed O
with O
respect O
to O
the O
occurrence O
of O
phase O
separation O
preceding O
the O
nucleation O
and O
growth O
of O
dendritic B-DSC
aluminium B-MAT
nanocrystals B-DSC
. O


correlation O
between O
microstructural B-PRO
evolutions I-PRO
and O
electrical B-PRO
/ O
mechanical B-PRO
behaviors I-PRO
in O
Nb B-MAT
/ O
Ce B-MAT
co-doped B-DSC
O75Pb25Ti12Zr13 B-MAT
ceramics B-DSC
at O
different O
sintering B-SMT
temperatures O


for O
Nb B-MAT
/ O
Ce B-MAT
co-doped B-DSC
O75Pb25Ti12Zr13 B-MAT
ceramics B-DSC
{ O
Pb(Zr0.52Ti0.48)0.95Nb0.05O3+0.2wt. B-MAT
% I-MAT
CeO2 I-MAT
} O
sintered B-SMT
between O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
, O
with O
increasing O
sintering B-SMT
temperatures O
, O
a O
gradual O
lattice B-PRO
distortion I-PRO
associated O
with O
an O
increased O
grain B-PRO
size I-PRO
are O
identified O
. O


electrical B-CMT
test I-CMT
reveals O
that O
the O
ceramics B-DSC
exhibit O
a O
diffused O
phase B-PRO
transition I-PRO
, O
and O
the O
intensity O
of O
permittivity B-PRO
peaks O
increase O
with O
increase O
in O
sintering B-SMT
temperatures O
. O


the O
samples O
sintered B-SMT
at O
higher O
temperatures O
present O
a O
stronger O
piezoelectric B-PRO
property I-PRO
because O
of O
a O
larger O
grain B-PRO
size I-PRO
. O


while O
the O
mechanical B-CMT
test I-CMT
demonstrates O
that O
the O
samples O
sintered B-SMT
at O
lower O
temperatures O
exhibited O
a O
higher O
hardness B-PRO
because O
of O
a O
smaller O
grain B-PRO
size I-PRO
. O


both O
the O
second B-PRO
crack I-PRO
and O
crack B-PRO
deflection I-PRO
are O
observed O
in O
the O
sample O
sintered B-SMT
at O
<nUm> O
° O
C O
. O


the O
domain B-PRO
switching I-PRO
caused O
by O
a O
compression O
load O
contributes O
to O
the O
nonlinear O
ferroelastic B-PRO
deformation I-PRO
of O
ceramics B-DSC
. O


At O
last O
, O
the O
sample O
sintered B-SMT
at O
<nUm> O
° O
C O
gains O
some O
good O
properties O
such O
as O
: O
Tc B-PRO
= O
<nUm> O
° O
C O
; O
d33 B-PRO
= O
<nUm> O
pC O
/ O
N O
; O
KIC B-PRO
= O
<nUm> O
MPam1 O
/ O
<nUm> O
and O
sc B-PRO
= O
<nUm> O
MPa O
. O


partial O
and O
integral O
enthalpies B-PRO
of I-PRO
mixing I-PRO
of O
liquid O
Ag B-MAT
– I-MAT
Al I-MAT
– I-MAT
Cu I-MAT
and O
Ag B-MAT
– I-MAT
Cu I-MAT
– I-MAT
Zn I-MAT
alloys B-DSC


the O
partial O
enthalpies B-PRO
of I-PRO
mixing I-PRO
of O
the O
components O
of O
liquid O
ternary O
Ag B-MAT
– I-MAT
Al I-MAT
– I-MAT
Cu I-MAT
( O
T O
= O
<nUm> O
± O
<nUm> O
K O
) O
and O
Ag B-MAT
– I-MAT
Cu I-MAT
– I-MAT
Zn I-MAT
( O
T O
= O
<nUm> O
– O
<nUm> O
K O
) O
alloys B-DSC
have O
been O
determined O
using O
a O
high B-SMT
- I-SMT
temperature I-SMT
isoperibolic I-SMT
calorimeter I-SMT
. O


measurements O
were O
performed O
starting O
from O
both O
pure O
Al B-MAT
and O
Zn B-MAT
and O
from O
binary O
liquid O
Ag B-MAT
– I-MAT
Cu I-MAT
alloys B-DSC
along O
sections O
with O
constant O
Ag B-MAT
: O
Cu B-MAT
ratios O
<nUm> O
: O
<nUm> O
, O
<nUm> O
: O
<nUm> O
, O
<nUm> O
: O
<nUm> O
( O
Ag B-MAT
– I-MAT
Al I-MAT
– I-MAT
Cu I-MAT
system O
) O
and O
<nUm> O
: O
<nUm> O
, O
<nUm> O
: O
<nUm> O
( O
Ag B-MAT
– I-MAT
Cu I-MAT
– I-MAT
Zn I-MAT
system O
) O
. O


the O
integral O
enthalpies B-PRO
of I-PRO
mixing I-PRO
of O
these O
ternary O
alloys B-DSC
are O
calculated O
from O
the O
partial O
enthalpies B-PRO
of I-PRO
mixing I-PRO
using O
different O
methods O
. O


the O
composition B-PRO
dependences O
of O
the O
partial O
and O
integral O
enthalpies B-PRO
were O
simultaneously O
analytically O
described O
according O
to O
a O
redlich B-CMT
– I-CMT
kister I-CMT
– I-CMT
mugianu I-CMT
equation I-CMT
using O
a O
least B-CMT
- I-CMT
squares I-CMT
fit I-CMT
by O
gauss B-CMT
– I-CMT
newton I-CMT
method I-CMT
. O


In O
case O
of O
Ag B-MAT
– I-MAT
Al I-MAT
– I-MAT
Cu I-MAT
alloys B-DSC
square- O
and O
higher O
order O
terms O
in O
excess O
ternary O
part O
are O
needed O
to O
adequately O
describe O
the O
surfaces B-DSC
of O
enthalpies B-PRO
of I-PRO
mixing I-PRO
. O


enthalpy B-PRO
data O
for O
the O
constituent O
binaries O
were O
adopted O
from O
latest O
calorimetric B-CMT
measurements I-CMT
and O
thermodynamic B-CMT
assessments I-CMT
of O
the O
phase B-PRO
diagrams I-PRO
. O


the O
evaluated O
integral O
enthalpy B-PRO
of I-PRO
mixing I-PRO
demonstrates O
that O
the O
minima O
for O
the O
Ag B-MAT
– I-MAT
Al I-MAT
– I-MAT
Cu I-MAT
( O
− O
<nUm> O
kJ O
mol-1 O
) O
and O
Ag B-MAT
– I-MAT
Cu I-MAT
– I-MAT
Zn I-MAT
( O
− O
<nUm> O
kJ O
mol-1 O
) O
correspond O
to O
binary O
compositions B-PRO
Al2Cu3 B-MAT
and O
CuZn B-MAT
, O
respectively O
. O


nitrogen O
- O
doped B-DSC
OZn B-MAT
prepared O
by O
capillaritron B-SMT
reactive I-SMT
ion I-SMT
beam I-SMT
sputtering I-SMT
deposition I-SMT


nitrogen O
- O
doped B-DSC
OZn B-MAT
thin B-DSC
films I-DSC
have O
been O
prepared O
by O
reactive B-SMT
ion I-SMT
beam I-SMT
sputtering I-SMT
deposition I-SMT
utilizing O
a O
capillaritron O
ion O
source O
. O


x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
analysis O
of O
the O
as-deposited B-DSC
film I-DSC
exhibits O
a O
single O
strong O
OZn B-MAT
( O
<nUm> O
) O
diffraction B-PRO
peak I-PRO
centred O
at O
<nUm> O
° O
. O


post-growth O
annealing B-SMT
causes O
increase O
of O
grain B-PRO
size I-PRO
and O
decrease O
of O
c-axis B-PRO
lattice I-PRO
constant I-PRO
. O


Micro-Raman B-CMT
spectroscopy I-CMT
analysis O
of O
the O
as-deposited B-DSC
film I-DSC
shows O
strong O
nitrogen O
- O
related O
local B-PRO
vibration I-PRO
mode I-PRO
at O
<nUm> O
, O
<nUm> O
, O
<nUm> O
and O
<nUm> O
cm-1 O
, O
whereas O
the O
E2 B-PRO
mode I-PRO
of O
OZn B-MAT
at O
<nUm> O
cm-1 O
can O
barely O
be O
identified O
. O


annealing B-SMT
at O
<nUm> O
– O
<nUm> O
° O
C O
causes O
decrease O
of O
<nUm> O
, O
<nUm> O
, O
<nUm> O
and O
<nUm> O
cm-1 O
and O
increase O
of O
<nUm> O
cm-1 O
intensity O
, O
indicating O
out O
- O
diffusion O
of O
nitrogen O
and O
improvement O
of O
OZn B-MAT
crystalline B-PRO
quality I-PRO
. O


unlike O
un-doped O
OZn B-MAT
, O
the O
surface B-PRO
roughness I-PRO
of O
nitrogen O
- O
doped B-DSC
OZn B-MAT
deteriorates O
after O
annealing B-SMT
, O
which O
is O
also O
attributed O
to O
the O
out O
- O
diffusion O
of O
nitrogen O
. O


A O
nitrogen B-PRO
concentration I-PRO
of O
∼ O
<nUm> O
/ O
cm3 O
was O
observed O
while O
type O
conversion O
from O
n B-PRO
- I-PRO
type I-PRO
to O
p B-PRO
- I-PRO
type I-PRO
was O
not O
achieved O
, O
which O
is O
likely O
due O
to O
the O
formation O
of O
IZn B-PRO
– I-PRO
NO I-PRO
or O
N2O B-PRO
that O
act O
as O
donor O
/ O
double O
donors O
. O


study O
on O
the O
relation O
between O
surface B-PRO
roughness I-PRO
and O
the O
light B-PRO
emission I-PRO
spectrum I-PRO
of O
an O
Au B-MAT
– O
Al2O3 B-MAT
– O
Al B-MAT
tunnel B-APL
junction I-APL


we O
investigate O
the O
correlation O
between O
the O
light B-PRO
emission I-PRO
spectra I-PRO
of O
Au B-MAT
– O
Al2O3 B-MAT
– O
Al B-MAT
junctions B-APL
and O
the O
surface B-PRO
morphology I-PRO
of O
the O
junction B-APL
obtained O
by O
atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
. O


from O
the O
AFM B-CMT
micrographs O
, O
we O
find O
a O
self B-PRO
- I-PRO
correlation I-PRO
length I-PRO
of O
our O
junction O
of O
about O
<nUm> O
mm O
, O
which O
corresponds O
to O
surface B-PRO
plasmon I-PRO
polarition I-PRO
( I-PRO
SPP I-PRO
) I-PRO
energies I-PRO
of O
about O
<nUm> O
, O
<nUm> O
, O
and O
1.3eV O
at O
the O
Au B-MAT
– O
air O
, O
Al B-MAT
– O
Al2O3 B-MAT
, O
and O
Au B-MAT
– O
Al2O3 B-MAT
interfaces B-DSC
, O
respectively O
. O


this O
agrees O
well O
with O
spectrum O
peaks O
observed O
at O
<nUm> O
nm O
( O
2.0eV O
) O
and O
<nUm> O
nm O
( O
1.77eV O
) O
. O


A O
platform O
region O
from O
<nUm> O
to O
<nUm> O
nm O
( O
1.48eV O
) O
in O
the O
spectrum O
is O
proposed O
to O
result O
from O
the O
overlap O
of O
SPP B-PRO
modes I-PRO
at O
the O
Au B-MAT
– O
Al2O3 B-MAT
and O
Al B-MAT
– O
Al2O3 B-MAT
interfaces B-DSC
. O


SPP B-PRO
modes I-PRO
at O
all O
three O
interfaces B-DSC
contribute O
to O
light O
emission O
via O
interface B-PRO
roughness I-PRO
in O
our O
system O
. O


composition B-PRO
dependence O
of O
the O
far B-PRO
- I-PRO
infrared I-PRO
response I-PRO
of O
the O
superconducting B-PRO
alloys B-DSC
YBa2(Cu1-x B-MAT
Zn I-MAT
x I-MAT
)3O7-d I-MAT


the O
temperature O
and O
composition B-PRO
dependence O
of O
reflection B-CMT
spectra O
in O
the O
long O
wavelength O
infrared O
range O
are O
presented O
for O
the O
high-Tc B-PRO
superconducting I-PRO
alloy B-DSC
YBa2(Cu1-xZnx)3O7-y B-MAT
, O
where O
x O
= O
<nUm> O
% O
and O
<nUm> O
% O
. O


we O
have O
observed O
that O
the O
far B-PRO
- I-PRO
infrared I-PRO
reflectivity I-PRO
decreases O
and O
some O
interesting O
photon B-PRO
features I-PRO
appear O
as O
x O
increases O
. O


the O
results O
are O
interpreted O
by O
referring O
to O
other O
works O
on O
similar O
materials O
and O
to O
existing O
theories O
. O


path B-CMT
- I-CMT
integral I-CMT
monte I-CMT
carlo I-CMT
study O
of O
amorphous B-DSC
silicon B-MAT


amorphous B-DSC
silicon B-MAT
( O
a-Si B-MAT
) O
is O
studied O
by O
path B-CMT
- I-CMT
integral I-CMT
monte I-CMT
carlo I-CMT
simulations I-CMT
. O


these O
quantum B-CMT
atomistic I-CMT
simulations I-CMT
allow O
one O
to O
analyze O
the O
temperature O
dependence O
of O
the O
kinetic O
and O
potential O
contributions O
to O
the O
vibrational B-PRO
energy I-PRO
of O
the O
material O
, O
as O
well O
as O
the O
atomic B-PRO
mean I-PRO
- I-PRO
square I-PRO
displacements I-PRO
, O
further O
than O
the O
harmonic B-CMT
approximation I-CMT
. O


the O
results O
obtained O
for O
a-Si B-MAT
are O
compared O
with O
those O
found O
in O
similar O
quantum B-CMT
simulations I-CMT
of O
crystalline B-DSC
silicon B-MAT
( O
c-Si B-MAT
) O
. O


the O
anharmonicity B-PRO
of O
the O
atom B-PRO
vibrations I-PRO
in O
a-Si B-MAT
is O
larger O
than O
in O
its O
crystalline B-DSC
counterpart O
, O
as O
seen O
by O
the O
kinetic B-PRO
- I-PRO
to I-PRO
- I-PRO
potential I-PRO
energy I-PRO
ratio I-PRO
( O
virial B-CMT
theorem I-CMT
) O
and O
by O
comparison O
to O
a O
harmonic B-CMT
approach I-CMT
for O
the O
solid O
vibrations O
. O


the O
amplitude O
of O
the O
atomic B-PRO
motion I-PRO
in O
a-Si B-MAT
is O
found O
to O
be O
larger O
than O
in O
c-Si B-MAT
, O
as O
a O
consequence O
of O
the O
presence O
of O
low O
- O
energy O
vibrational O
modes O
in O
the O
amorphous B-DSC
material O
. O


this O
amplitude O
is O
enhanced O
further O
by O
anharmonicities B-PRO
in O
the O
interatomic B-PRO
potential I-PRO
. O


soft B-CMT
x-ray I-CMT
XANES I-CMT
studies O
of O
various O
phases O
related O
to O
FeLiO4P B-MAT
based O
cathode B-APL
materials O


FeLiO4P B-MAT
has O
been O
a O
promising O
cathode B-APL
material O
for O
rechargeable B-APL
lithium I-APL
ion I-APL
batteries I-APL
. O


different O
secondary O
or O
impurity B-PRO
phases I-PRO
, O
forming O
during O
either O
synthesis O
or O
subsequent O
redox O
process O
under O
normal O
operating O
conditions O
, O
can O
have O
a O
significant O
impact O
on O
the O
performance O
of O
the O
electrode B-APL
. O


the O
exploration O
of O
the O
electronic B-PRO
and O
chemical B-PRO
structures I-PRO
of O
impurity B-PRO
phases I-PRO
is O
crucial O
to O
understand O
such O
influence O
. O


we O
have O
embarked O
on O
a O
series O
of O
synchrotron O
- O
based O
x-ray B-CMT
absorption I-CMT
near I-CMT
- I-CMT
edge I-CMT
structure I-CMT
( O
XANES B-CMT
) O
spectroscopy O
studies O
for O
the O
element O
speciation O
in O
various O
impurity B-PRO
phase I-PRO
materials O
relevant O
to O
FeLiO4P B-MAT
for O
Li B-APL
ion I-APL
batteries I-APL
. O


In O
the O
present O
report O
, O
soft-X-ray B-CMT
XANES I-CMT
spectra O
of O
Li B-MAT
K B-PRO
- I-PRO
edge I-PRO
, O
P B-MAT
L2,3 B-PRO
- I-PRO
edge I-PRO
, O
O O
K B-PRO
- I-PRO
edge I-PRO
and O
Fe B-MAT
L2,3 B-PRO
- I-PRO
edge I-PRO
have O
been O
obtained O
for O
FeLiO4P B-MAT
in O
crystalline B-DSC
, O
disordered B-DSC
and O
amorphous B-DSC
forms O
and O
some O
possible O
“ O
impurities O
” O
, O
including O
LiO3P B-MAT
, O
Li4O7P2 B-MAT
, O
Li3O4P B-MAT
, O
Fe3O8P2 B-MAT
, O
FeO4P B-MAT
, O
and O
Fe2O3 B-MAT
. O


the O
results O
indicate O
that O
each O
element O
from O
different O
pure O
reference O
compounds O
exhibits O
unique O
spectral B-PRO
features I-PRO
in O
terms O
of O
energy O
position O
, O
shape O
and O
intensity O
of O
the O
resonances O
in O
its O
XANES B-CMT
. O


In O
addition O
, O
inverse B-CMT
partial I-CMT
fluorescence I-CMT
yield I-CMT
( O
IPFY B-CMT
) O
reveals O
the O
surface B-DSC
vs. O
bulk B-DSC
property O
of O
the O
specimens O
. O


therefore O
, O
the O
spectral O
data O
provided O
here O
can O
be O
used O
as O
standards O
in O
the O
future O
for O
phase B-PRO
composition I-PRO
analysis O
. O


ferroelectric B-PRO
SBN B-MAT
thin B-DSC
films I-DSC
grown O
by O
an O
SBN B-MAT
/ O
Bi2O3 B-MAT
PLD B-SMT
sequential O
process O


ferroelectric B-PRO
Bi2Nb2O9Sr B-MAT
( O
SBN B-MAT
) O
thin B-DSC
films I-DSC
were O
prepared O
by O
pulsed B-SMT
laser I-SMT
deposition I-SMT
( O
PLD B-SMT
) O
on O
Pt B-MAT
/ O
Ti B-MAT
/ O
O2Si B-MAT
/ O
Si(100) B-MAT
using O
a O
sequential B-SMT
deposition I-SMT
process I-SMT
from O
two O
SBN B-MAT
and O
Bi2O3 B-MAT
targets O
. O


this O
route O
allows O
for O
bismuth B-MAT
enrichment O
of O
the O
film B-DSC
composition B-PRO
in O
order O
to O
improve O
the O
ferroelectric B-PRO
characteristics I-PRO
. O


structural B-PRO
and O
microstructural B-CMT
characterizations I-CMT
were O
performed O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
. O


the O
composition B-PRO
of O
films B-DSC
and O
targets O
was O
determined O
by O
energy B-CMT
dispersive I-CMT
x-ray I-CMT
spectrometry I-CMT
( O
EDX B-CMT
) O
. O


the O
deposition O
temperature O
, O
which O
provided O
well O
- O
crystallized O
layered B-DSC
perovskite B-SPL
SBN B-MAT
phase O
films B-DSC
in O
situ O
, O
was O
found O
to O
be O
<nUm> O
° O
C O
. O


the O
results O
were O
compared O
with O
those O
obtained O
for O
SBN B-MAT
films B-DSC
deposited O
at O
<nUm> O
° O
C O
and O
then O
crystallized O
ex O
situ O
. O


for O
an O
ex O
situ O
annealing B-SMT
temperature O
of O
<nUm> O
° O
C O
, O
a O
remanent B-PRO
polarization I-PRO
value O
( O
Pr B-PRO
) O
of O
<nUm> O
mc O
/ O
cm2 O
and O
a O
coercive B-PRO
field I-PRO
( O
ec B-PRO
) O
of O
<nUm> B-PRO
kV O
/ O
cm O
were O
measured O
. O


fast O
lithium B-PRO
conducting I-PRO
glass B-DSC
- I-DSC
ceramics I-DSC
in O
the O
Li2O-CaO-TiO2-Al2O3-P2O5 B-MAT
system O


electrical B-PRO
conductivity I-PRO
was O
measured O
for O
the O
glasses B-DSC
and O
glass B-DSC
- I-DSC
ceramics I-DSC
with O
the O
composition B-PRO
(1+x)Li2O* B-MAT
6.6CaO*(4-2x)TiO2*xAl2O3*5.2P2O5 I-MAT
( O
mol O
ratio O
) O
. O


high O
li+ B-PRO
- I-PRO
conducting I-PRO
glass B-DSC
- I-DSC
ceramics I-DSC
were O
obtained O
at O
around O
x O
= O
<nUm> O
. O


the O
glass B-DSC
- I-DSC
ceramics I-DSC
are O
composed O
of O
LiO12P3Ti2 B-MAT
: I-MAT
Al I-MAT
, O
which O
is O
a O
fast O
li+ B-PRO
-conductor I-PRO
, O
and O
b-Ca3(PO4)2 B-MAT
phases O
. O


the O
activation B-PRO
energy I-PRO
for O
the O
conduction B-PRO
was O
<nUm> O
kJ O
/ O
mol O
, O
which O
is O
comparable O
to O
that O
in O
Li3N B-MAT
or O
LISICON B-MAT
. O


the O
conductivity B-PRO
at O
<nUm> O
K O
and O
<nUm> O
K O
is O
<nUm> O
× O
10-5 O
S O
/ O
cm O
and O
<nUm> O
× O
10-2 O
S O
/ O
cm O
, O
respectively O
, O
i.e. O
<nUm> O
to O
<nUm> O
orders O
of O
magnitude O
higher O
than O
those O
observed O
in O
the O
corresponding O
glasses B-DSC
. O


AlAsGaIn B-MAT
/ O
AlAsGa B-MAT
quantum B-APL
wells I-APL
: O
line B-PRO
widths I-PRO
, O
transition B-PRO
energies I-PRO
and O
segregation O


we O
investigate O
the O
optical B-PRO
properties I-PRO
of O
AlAsGaIn B-MAT
/ O
AlAsGa B-MAT
quantum B-APL
wells I-APL
pseudomorphically O
grown O
on O
AsGa B-MAT
using O
molecular B-SMT
beam I-SMT
epitaxy I-SMT
( O
MBE B-SMT
) O
. O


the O
transition B-PRO
energies I-PRO
, O
measured O
with O
photoluminescence B-CMT
( O
PL B-CMT
) O
, O
are O
modelled O
solving O
the O
schrodinger B-CMT
equation I-CMT
, O
and O
taking O
into O
account O
segregation O
in O
the O
group O
III O
sublattice O
. O


from O
a O
fit O
to O
the O
transition B-PRO
energies I-PRO
, O
an O
empirical O
band B-PRO
gap I-PRO
relation O
for O
AlAsGaIn B-MAT
is O
found O
, O
in O
the O
composition O
range O
relevant O
for O
growth O
on O
AsGa B-MAT
. O


the O
PL B-CMT
lines O
at O
low O
temperature O
( O
T O
= O
<nUm> O
K O
) O
are O
broadened O
due O
to O
random O
alloy B-DSC
fluctuations O
and O
an O
interface B-PRO
roughness I-PRO
of O
<nUm> O
monolayers O
. O


finally O
, O
the O
use O
of O
AlAsGaIn B-MAT
/ O
AlAsGa B-MAT
quantum B-APL
wells I-APL
for O
making O
strained O
t-shaped B-DSC
quantum I-DSC
wires I-DSC
is O
demonstrated O
. O


studies O
on O
the O
synthesis O
and O
sintering B-SMT
of O
nanocrystalline B-DSC
yttria B-MAT


nanocrystalline B-DSC
yttria B-MAT
powders B-DSC
were O
synthesized O
from O
yttrium O
nitrate O
by O
the O
citrate B-SMT
gel I-SMT
- I-SMT
combustion I-SMT
technique I-SMT
. O


the O
auto O
- O
ignition O
of O
five O
different O
gels O
with O
fuel O
to O
oxidant O
( O
citric O
acid O
/ O
nitrate O
) O
ratios O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
and O
<nUm> O
was O
studied O
. O


all O
these O
mixtures O
yielded O
precursors O
which O
upon O
calcination B-SMT
in O
air O
at O
1073K O
yielded O
yttria B-MAT
. O


the O
bulk B-DSC
densities B-PRO
, O
specific B-PRO
surface I-PRO
area I-PRO
, O
x-ray B-PRO
crystallite I-PRO
size I-PRO
, O
size B-PRO
distribution I-PRO
of O
particles B-DSC
as O
well O
as O
the O
residual O
carbon B-MAT
present O
in O
these O
powders B-DSC
were O
determined O
. O


the O
influence O
of O
the O
fuel O
to O
oxidant O
ratio O
on O
the O
powder B-DSC
properties O
was O
analyzed O
. O


scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
showed O
that O
these O
powders B-DSC
were O
porous B-DSC
while O
the O
high B-CMT
resolution I-CMT
transmission I-CMT
electron I-CMT
microscopy I-CMT
( O
HRTEM B-CMT
) O
revealed O
that O
they O
consist O
of O
randomly O
oriented O
cuboidal B-SPL
nanocrystallites B-DSC
with O
an O
average O
crystallite B-PRO
size I-PRO
of O
<nUm> O
± O
<nUm> O
nm O
. O


these O
powders B-DSC
were O
compacted O
at O
120MPa O
without O
any O
lubricant O
or O
binder O
and O
their O
sinterability B-PRO
was O
studied O
. O


pellets B-DSC
with O
a O
sintered B-SMT
density B-PRO
as O
high O
as O
<nUm> O
– O
<nUm> O
% O
T.D O
. O


( O
theoretical O
density B-PRO
) O
could O
be O
obtained O
at O
a O
relatively O
low O
sintering B-SMT
temperature O
of O
1673K O
. O


studies O
on O
the O
dependence O
of O
the O
properties O
of O
nanocrystalline B-DSC
yttria B-MAT
powders B-DSC
on O
the O
composition B-PRO
of O
the O
initial O
mixture O
used O
in O
the O
citrate B-SMT
gel I-SMT
- I-SMT
combustion I-SMT
as O
well O
as O
the O
sintering B-SMT
characteristics O
of O
these O
powders B-DSC
are O
being O
reported O
for O
the O
first O
time O
. O


our O
investigations O
revealed O
that O
an O
initial O
mixture O
comprising O
equimolar O
quantities O
of O
the O
nitrate O
and O
citric O
acid O
yielded O
a O
powder B-DSC
with O
characteristics O
most O
suitable O
for O
fabricating O
yttria B-MAT
crucibles B-APL
. O


effect O
of O
sinter B-SMT
temperature O
on O
the O
electrical B-PRO
properties I-PRO
of O
O2Ti B-MAT
- O
based O
capacitor B-APL
– I-APL
varistors I-APL


the O
effect O
of O
sinter B-SMT
temperature O
on O
the O
electrical B-PRO
properties I-PRO
of O
a O
new O
O2Ti B-MAT
- O
based O
varistor B-APL
system O
, O
TiO2*Y2O3*Nb2O5 B-MAT
, O
was O
investigated O
by O
measuring O
the O
properties O
of O
I O
– O
V O
, O
permittivity B-PRO
and O
grain B-PRO
- I-PRO
boundary I-PRO
barriers I-PRO
. O


the O
varistor B-APL
of O
<nUm> B-MAT
% I-MAT
TiO2*0.60 I-MAT
% I-MAT
Y2O3*0.10 I-MAT
% I-MAT
Nb2O5 I-MAT
composite B-DSC
sintered B-SMT
at O
<nUm> O
° O
C O
has O
a O
maximal O
nonlinear B-PRO
coefficient I-PRO
of O
α B-PRO
= O
<nUm> O
, O
a O
low O
reference B-PRO
electrical I-PRO
field I-PRO
of O
<nUm> O
v*mm-1 O
at O
<nUm> O
mA O
cm-2 O
, O
a O
high O
density B-PRO
of O
<nUm> O
g O
/ O
cm3 O
and O
the O
ultrahigh O
permittivity B-PRO
of O
more O
than O
<nUm> O
( O
measured O
at O
<nUm> O
kHz O
) O
, O
which O
is O
consistent O
with O
its O
highest O
and O
narrowest O
grain B-PRO
- I-PRO
boundary I-PRO
barriers I-PRO
. O


due O
to O
these O
properties O
the O
( O
Nb B-MAT
, O
Y B-MAT
) O
- O
doped B-DSC
O2Ti B-MAT
varistors B-APL
sintered B-SMT
at O
<nUm> O
° O
C O
has O
varistor B-APL
- I-APL
capacitance I-APL
multifunctional I-APL
components I-APL
, O
which O
are O
quite O
useful O
in O
the O
situation O
that O
the O
voltage B-PRO
protection I-PRO
and O
high B-PRO
- I-PRO
frequency I-PRO
noise I-PRO
absorption I-PRO
are O
meanwhile O
required O
. O


In O
order O
to O
illustrate O
the O
grain B-PRO
- I-PRO
boundary I-PRO
barrier I-PRO
formation I-PRO
in O
TiO2*Y2O3*Nb2O5 B-MAT
varistors B-APL
, O
a O
grain B-CMT
- I-CMT
boundary I-CMT
defect I-CMT
barrier I-CMT
model I-CMT
was O
also O
introduced O
. O


synthesis O
of O
aluminum B-MAT
- O
doped B-DSC
mesoporous I-DSC
zirconia B-MAT
with O
improved O
thermal B-PRO
stability I-PRO


mesoporous B-DSC
zirconia B-MAT
doped B-DSC
with O
varying O
amounts O
of O
aluminum B-MAT
are O
synthesized O
by O
the O
evaporation B-SMT
induced I-SMT
self I-SMT
- I-SMT
assembly I-SMT
( I-SMT
EISA I-SMT
) I-SMT
method I-SMT
, O
and O
their O
structure B-PRO
and O
textural B-PRO
properties I-PRO
are O
investigated O
extensively O
. O


the O
results O
show O
that O
in O
contrast O
to O
most O
other O
zirconia B-MAT
binary O
system O
, O
doping O
of O
zirconia B-MAT
with O
aluminum B-MAT
stabilizes O
tetragonal B-SPL
zirconia B-MAT
over O
the O
cubic B-SPL
phase O
, O
and O
the O
crystallization B-PRO
temperature I-PRO
of O
the O
as-obtained B-DSC
powders I-DSC
increases O
with O
increasing O
aluminum B-MAT
content O
, O
thereby O
improve O
the O
thermal B-PRO
stability I-PRO
of O
the O
mesoporous B-DSC
zirconia B-MAT
. O


the O
BET B-PRO
surface I-PRO
area I-PRO
and O
pore B-PRO
volume I-PRO
of O
the O
samples O
doped B-DSC
with O
the O
same O
amount O
of O
aluminum B-MAT
decreases O
with O
increasing O
calcination B-SMT
temperature O
, O
accompanied O
by O
an O
increase O
in O
the O
mean O
BJH B-PRO
pore I-PRO
size I-PRO
. O


furthermore O
, O
the O
BET B-PRO
surface I-PRO
area I-PRO
and O
pore B-PRO
volume I-PRO
of O
the O
samples O
calcined B-SMT
at O
the O
same O
temperature O
increase O
with O
increasing O
amounts O
of O
aluminum B-MAT
. O


for O
sample O
with O
an O
Al B-PRO
/ I-PRO
Zr I-PRO
molar I-PRO
ratio I-PRO
of O
<nUm> O
, O
the O
disordered O
“ O
wormhole O
- O
like O
” O
mesoporous B-DSC
structure O
remained O
even O
after O
calcination B-SMT
at O
<nUm> O
° O
C O
for O
1h O
. O


titanium B-MAT
implantation B-SMT
into O
boron B-MAT
nitride I-MAT
films B-DSC
and O
ion B-SMT
- I-SMT
beam I-SMT
mixing I-SMT
of O
titanium B-MAT
- I-MAT
boron I-MAT
nitride I-MAT
multilayers B-DSC


TiBN B-MAT
films B-DSC
of O
various O
composition B-PRO
and O
crystalline B-PRO
structure I-PRO
have O
been O
synthesized O
by O
titanium B-SMT
ion I-SMT
implantation I-SMT
into O
sub-stoichiometric B-DSC
and O
stoichiometric B-DSC
hexagonal B-SPL
boron B-MAT
nitride I-MAT
films B-DSC
. O


due O
to O
the O
relatively O
low O
penetration O
depth O
of O
ti+ O
ions O
these O
films B-DSC
can O
only O
be O
prepared O
with O
limited O
thickness O
, O
of O
the O
order O
of O
several O
hundred O
nanometers O
. O


TiBN B-MAT
films B-DSC
were O
also O
prepared O
by O
ion B-SMT
- I-SMT
beam I-SMT
mixing I-SMT
of O
multilayer B-DSC
coatings B-APL
of O
the O
sequence O
Ti B-MAT
BN I-MAT
by O
argon B-SMT
ion I-SMT
bombardment I-SMT
. O


with O
these O
methods O
, O
inhomogeneous O
coatings B-APL
with O
respect O
to O
their O
composition B-PRO
, O
in O
particular O
at O
low O
fluences O
, O
were O
obtained O
. O


all O
films B-DSC
were O
investigated O
by O
glancing B-CMT
angle I-CMT
x-ray I-CMT
diffraction I-CMT
. O


SEM B-CMT
, O
SNMS B-CMT
and O
ESCA B-CMT
/ O
auger B-CMT
analysis I-CMT
were O
also O
performed O
on O
some O
of O
the O
samples O
. O


hardness B-PRO
and O
young B-PRO
's I-PRO
modulus I-PRO
were O
determined O
by O
an O
ultra-low O
load O
, O
depth B-CMT
- I-CMT
sensing I-CMT
nanoindenter I-CMT
. O


most O
of O
the O
results O
can O
be O
understood O
by O
examination O
of O
the O
chemical B-PRO
composition I-PRO
and O
crystalline B-PRO
structure I-PRO
of O
the O
films B-DSC
. O


density B-CMT
functional I-CMT
investigation O
of O
structural B-PRO
and O
electronic B-PRO
properties I-PRO
of O
small O
bimetallic O
silver B-MAT
– O
gold B-MAT
clusters B-DSC


structural B-PRO
and O
electronic B-PRO
properties I-PRO
of O
bimetallic O
silver B-MAT
– O
gold B-MAT
clusters B-DSC
up O
to O
eight O
atoms O
are O
investigated O
by O
the O
density B-CMT
functional I-CMT
theory I-CMT
using O
wu O
and O
cohen O
generalized B-CMT
gradient I-CMT
approximation I-CMT
functional O
. O


by O
substitution O
of O
Ag B-MAT
and O
Au B-MAT
atoms O
, O
in O
the O
optimized O
lowest O
energy O
structures B-PRO
of O
pure B-DSC
gold B-MAT
and O
silver B-MAT
clusters B-DSC
, O
we O
determine O
the O
ground B-PRO
state I-PRO
conformations I-PRO
of O
the O
bimetallic O
silver B-MAT
– O
gold B-MAT
ones O
. O


we O
reveal O
that O
Ag B-MAT
atoms O
prefer O
internal O
positions O
whereas O
Au B-MAT
atoms O
prefer O
exposed O
ones O
favoring O
charge O
transfer O
from O
Ag B-MAT
to O
Au B-MAT
atoms O
. O


for O
each O
size O
and O
composition B-PRO
, O
binding B-PRO
energy I-PRO
, O
HOMO B-PRO
– I-PRO
LUMO I-PRO
gap I-PRO
, O
magnetic B-PRO
moment I-PRO
, O
vertical B-PRO
ionization I-PRO
potential I-PRO
, O
electron B-PRO
affinity I-PRO
and O
chemical B-PRO
hardness I-PRO
were O
calculated O
. O


on O
increasing O
the O
size O
of O
the O
cluster B-DSC
by O
varying O
number O
of O
Ag B-MAT
atoms O
with O
fixed O
number O
of O
Au B-MAT
ones O
, O
vertical B-PRO
ionization I-PRO
potential I-PRO
and O
electron B-PRO
affinity I-PRO
show O
obvious O
odd O
– O
even O
oscillations O
consistent O
with O
the O
pure O
Ag B-MAT
and O
Au B-MAT
clusters B-DSC
. O


Au B-MAT
atoms O
inclusion O
in O
the O
cluster O
increases O
the O
binding B-PRO
energy I-PRO
and O
vertical B-PRO
ionization I-PRO
potential I-PRO
, O
indicating O
higher O
stability B-PRO
as O
the O
number O
of O
Au B-MAT
atoms O
grows O
. O


the O
variation O
of O
chemical B-PRO
hardness I-PRO
with O
the O
composition B-PRO
in O
a O
cluster B-DSC
with O
the O
same O
size O
shows O
peaks O
when O
the O
number O
of O
Ag B-MAT
atoms O
is O
greater O
than O
or O
equal O
to O
Au B-MAT
ones O
, O
corresponding O
to O
transition O
from O
planar O
to O
tri-dimensional O
structures O
. O


for O
clusters B-DSC
with O
even O
number O
of O
atoms O
, O
the O
peaks O
indicate O
that O
the O
clusters B-DSC
with O
the O
same O
number O
of O
Ag B-MAT
and O
Au B-MAT
atoms O
are O
the O
most O
stable O
ones O
. O


analyzing O
the O
density B-PRO
of I-PRO
states I-PRO
, O
we O
found O
that O
increasing O
the O
concentration O
of O
Ag B-MAT
atoms O
affects O
the O
energy O
separation O
between O
the O
HOMO B-PRO
and O
the O
low B-PRO
lying I-PRO
occupied I-PRO
states I-PRO
. O


the O
symmetry B-CMT
analysis I-CMT
and O
magnetic B-CMT
model I-CMT
of O
Dy[Fe(CN)6]*4D2O B-MAT


magnetic B-PRO
structure I-PRO
of O
Dy[Fe(CN)6]*4D2O B-MAT
was O
determined O
by O
means O
of O
neutron B-CMT
powder I-CMT
diffraction I-CMT
. O


the O
magnetic B-PRO
structure I-PRO
consists O
of O
Fe B-MAT
and O
Dy B-MAT
sublattices O
, O
which O
are O
coupled O
antiferromagnetically B-PRO
leading O
to O
overall O
ferrimagnetic B-PRO
ordering I-PRO
with O
the O
curie B-PRO
temperature I-PRO
Tc I-PRO
= O
<nUm> O
K O
. O


while O
for O
Fe B-MAT
- O
atoms O
the O
y-component O
of O
magnetic B-PRO
moment I-PRO
is O
large O
and O
the O
z-component O
is O
negligible O
, O
in O
the O
case O
of O
Dy B-MAT
- O
atoms O
the O
x-and O
the O
y-magnetic B-PRO
moment I-PRO
components O
are O
large O
and O
the O
arrangement O
of O
magnetic B-PRO
moments I-PRO
on O
Dy B-MAT
- O
sublattice O
is O
non-collinear O
. O


In O
this O
magnetic B-PRO
structure I-PRO
the O
y-components O
of O
magnetic B-PRO
moment I-PRO
on O
Dy B-MAT
and O
Fe B-MAT
atoms O
are O
anti-parallel O
. O


our O
magnetic B-PRO
structure I-PRO
refinement O
yields O
the O
moment B-PRO
value I-PRO
of O
<nUm> O
mB O
for O
dysprosium B-MAT
and O
<nUm> O
mB O
for O
iron B-MAT
atoms O
. O


Fe2O3 B-MAT
single B-DSC
crystals I-DSC
: O
hydrothermal B-SMT
growth I-SMT
, O
crystal B-PRO
chemistry I-PRO
and O
growth B-PRO
morphology I-PRO


hematite B-MAT
single B-DSC
crystals I-DSC
have O
been O
grown O
under O
hydrothermal B-SMT
conditions I-SMT
. O


the O
analysis O
of O
atomic B-PRO
structures I-PRO
of O
the O
{hkil} O
faces O
has O
been O
made O
, O
and O
the O
sequence O
of O
the O
growth O
rate O
change O
has O
been O
explained O
on O
the O
basis O
of O
that O
analysis O
. O


optical B-CMT
and O
AFM B-CMT
study O
show O
two O
main O
mechanisms O
of O
a-Fe2O3 B-MAT
growth O
. O


they O
are O
layer O
- O
by O
- O
layer O
growth O
and O
island O
growth O
. O


the O
morphological B-PRO
characteristics I-PRO
of O
{ O
<nUm> O
<nUm> O
̄ O
<nUm> O
} O
surfaces B-DSC
are O
given O
. O


large O
flat O
terraces O
with O
height O
h O
<nUm> O
– O
<nUm> O
nm O
, O
width O
d O
∼ O
<nUm> O
nm O
are O
observed O
of O
the O
face O
surface B-DSC
. O


terraces O
are O
composed O
from O
the O
steps O
( O
h O
<nUm> O
– O
<nUm> O
, O
d O
<nUm> O
– O
<nUm> O
nm O
) O
. O


AFM B-CMT
- O
images O
of O
small O
steps O
demonstrate O
that O
they O
consist O
of O
globules O
with O
rounded O
or O
elongated O
shapes O
. O


typical O
heights O
of O
globules O
are O
<nUm> O
– O
<nUm> O
nm O
, O
and O
typical O
lengths O
are O
<nUm> O
– O
<nUm> O
nm O
. O


these O
globules O
are O
orderly O
packed O
on O
the O
face O
, O
the O
elongation O
being O
along O
[ O
<nUm> O
<nUm> O
̄ O
<nUm> O
] O
direction O
. O


production O
of O
a O
bridge B-APL
structure I-APL
using O
diamond B-MAT
film B-DSC


we O
intend O
to O
use O
diamond B-MAT
film B-DSC
as O
sensors B-APL
for O
pressure O
, O
strain O
and O
acceleration O
. O


for O
this O
purpose O
, O
a O
new O
process O
was O
developed O
to O
produce O
a O
bridge B-APL
structure I-APL
of O
diamond B-MAT
film B-DSC
using O
sacrificial B-SMT
layer I-SMT
etching I-SMT
and O
selective O
growth O
by O
ion B-SMT
implantation I-SMT
. O


the O
size O
of O
the O
bridge B-APL
made O
by O
this O
process O
is O
<nUm> O
× O
<nUm> O
mm2 O
and O
the O
thickness O
is O
about O
<nUm> O
mm O
. O


bending O
displacement O
of O
the O
bridge B-APL
under O
various O
loads O
between O
<nUm> O
mgf O
and O
<nUm> O
mgf O
is O
studied O
. O


the O
maximum B-PRO
displacement I-PRO
is O
proportional O
to O
the O
load O
and O
is O
about O
<nUm> O
mm O
at O
<nUm> O
mgf O
loading O
. O


As O
a O
result O
, O
young B-PRO
's I-PRO
modulus I-PRO
of O
the O
diamond B-MAT
film B-DSC
is O
estimated O
to O
be O
about O
<nUm> O
GPa O
. O


effect O
of O
Gd B-MAT
content O
on O
microstructure B-PRO
and O
mechanical B-PRO
properties I-PRO
of O
Mg-Y-RE-Zr B-MAT
alloys B-DSC


four O
kinds O
of O
Mg-Y-RE-Zr B-MAT
alloys B-DSC
with O
different O
Gd B-MAT
contents O
were O
prepared O
, O
and O
the O
effect O
of O
Gd B-MAT
content O
on O
microstructure B-PRO
and O
mechanical B-PRO
properties I-PRO
of O
the O
alloys B-DSC
was O
researched O
. O


based O
on O
the O
experimental O
investigation O
, O
the O
compounds O
at O
the O
grain B-PRO
boundaries I-PRO
are O
mainly O
Mg24Y5 B-MAT
, O
Mg41Nd5 B-MAT
, O
and O
GdMg5 B-MAT
phases O
. O


the O
average O
grain B-PRO
size I-PRO
of O
as-cast B-DSC
alloys I-DSC
is O
<nUm> O
– O
<nUm> O
mm O
. O


after O
T4 B-SMT
( I-SMT
<nUm> I-SMT
° I-SMT
C I-SMT
, I-SMT
<nUm> I-SMT
h I-SMT
) I-SMT
treatment I-SMT
, O
GdMg5 B-MAT
phases O
mostly O
decompose O
and O
dissolve O
into O
the O
matrix O
, O
and O
the O
disperse O
spotted O
phases O
are O
mainly O
Mg24Y5 B-MAT
and O
Mg41Nd5 B-MAT
phases O
. O


after O
extruding B-SMT
and O
ageing B-SMT
( O
<nUm> O
° O
C O
, O
<nUm> O
h O
) O
, O
the O
grain B-PRO
size I-PRO
is O
refined O
and O
some O
grains O
abnormally O
grow O
up O
to O
about O
<nUm> O
mm O
. O


with O
Gd B-MAT
content O
increasing O
, O
the O
ultimate O
tensile B-PRO
strength I-PRO
, O
yield B-PRO
strength I-PRO
of O
as-cast B-DSC
alloys I-DSC
and O
the O
extruded B-SMT
bars B-DSC
after O
ageing B-SMT
are O
improved O
, O
but O
the O
elongation O
is O
decreased O
. O


angular B-CMT
resolved I-CMT
XPS I-CMT
applied O
to O
O5V2 B-MAT
- O
based O
catalysts B-APL


two O
applications O
of O
angular B-CMT
dependent I-CMT
XPS I-CMT
( O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
) O
experiments O
, O
performed O
with O
a O
perkin B-CMT
elmer I-CMT
phi I-CMT
<nUm> I-CMT
ESCA I-CMT
system I-CMT
in O
the O
framework O
of O
a O
monolayer B-DSC
catalyst B-APL
research O
project O
, O
are O
illustrated O
. O


XPFS B-CMT
( O
x-ray B-CMT
photoelectron I-CMT
forward I-CMT
scattering I-CMT
) O
measurements O
were O
used O
to O
show O
the O
oxygen O
removal O
at O
the O
surface B-DSC
of O
catalytically B-SMT
reduced I-SMT
V2O5(001) B-MAT
pellets B-DSC
, O
in O
comparison O
with O
pure O
O5V2 B-MAT
. O


ARXPS B-CMT
( O
angle B-CMT
resolved I-CMT
XPS I-CMT
) O
polar O
scans O
were O
taken O
from O
a O
model O
catalyst B-APL
system O
( O
O2Ti B-MAT
anatase B-SPL
supported O
O5V2 B-MAT
layers B-DSC
) O
in O
order O
to O
determine O
their O
components O
and O
the O
chemical B-PRO
state I-PRO
of O
the O
system O
. O


with O
the O
use O
of O
the O
statistical O
technique O
MLCFA B-CMT
( O
maximum B-CMT
likelihood I-CMT
common I-CMT
factor I-CMT
analysis I-CMT
) O
, O
different O
overlapping O
components O
in O
the O
V B-MAT
and O
Ti B-MAT
photoemission B-PRO
peaks I-PRO
were O
separated O
, O
pointing O
towards O
the O
existence O
of O
a O
VTiO B-MAT
bonding O
at O
the O
V B-MAT
<nUm> I-MAT
O I-MAT
<nUm> I-MAT
OTi I-MAT
<nUm> I-MAT
interface B-DSC
. O


combustion B-SMT
synthesis I-SMT
as O
a O
novel O
approach O
in O
preparation O
of O
polycrystalline B-DSC
Cu2O5Y2 B-MAT


polycrystalline B-DSC
samples O
of O
Cu2O5Y2 B-MAT
were O
for O
the O
first O
time O
sintered B-SMT
from O
precursors O
obtained O
by O
two O
combustion B-SMT
routes I-SMT
– O
the O
glycine B-SMT
– I-SMT
nitrate I-SMT
method I-SMT
( O
sample O
S1 O
) O
and O
a O
modified O
self B-SMT
- I-SMT
propagating I-SMT
high I-SMT
- I-SMT
temperature I-SMT
synthesis I-SMT
( O
sample O
S2 O
) O
. O


the O
detailed O
x-ray B-CMT
diffraction I-CMT
analysis O
has O
confirmed O
that O
both O
samples O
are O
well O
crystallized B-DSC
and O
single B-DSC
phase I-DSC
, O
with O
the O
high O
crystallization B-PRO
degree I-PRO
and O
cation B-PRO
ordering I-PRO
within O
a O
Cu B-MAT
sublattice O
. O


magnetic B-CMT
characterization I-CMT
has O
shown O
magnetic B-PRO
behavior I-PRO
typical O
of O
pure B-DSC
Cu2O5Y2 B-MAT
. O


the O
distinctive O
advantages O
of O
these O
new O
synthesis O
routes O
in O
comparison O
to O
the O
ceramic B-DSC
sintering B-SMT
are O
in O
simplification O
of O
the O
overall O
procedure O
as O
well O
as O
in O
a O
significant O
reduction O
of O
synthesis O
duration O
from O
several O
days O
down O
to O
31h O
( O
S1 O
) O
or O
12h O
( O
S2 O
) O
. O


A O
simple O
nanoindentation B-CMT
- O
based O
methodology O
to O
assess O
the O
strength B-PRO
of O
brittle B-PRO
thin B-DSC
films I-DSC


In O
this O
work O
, O
we O
report O
a O
simple O
methodology O
to O
assess O
the O
mechanical B-PRO
strength I-PRO
of O
sub-micron B-DSC
brittle B-PRO
films B-DSC
. O


nanoindentation B-CMT
of O
as-deposited B-DSC
tetrahedral O
amorphous B-DSC
carbon B-MAT
( O
ta-C B-MAT
) O
and O
Ti B-MAT
– I-MAT
Si I-MAT
– I-MAT
N I-MAT
nanocomposite B-DSC
films I-DSC
on O
silicon B-MAT
substrates B-DSC
followed O
by O
cross-sectional O
examination O
of O
the O
damage O
with O
a O
focused B-SMT
ion I-SMT
beam I-SMT
( I-SMT
FIB I-SMT
) I-SMT
miller I-SMT
allows O
the O
occurrence O
of O
cracking O
to O
be O
assessed O
in O
comparison O
with O
discontinuities O
( O
pop O
- O
ins O
) O
in O
the O
load B-CMT
– I-CMT
displacement I-CMT
curves I-CMT
. O


strength B-PRO
is O
determined O
from O
the O
critical B-PRO
loads I-PRO
at O
which O
first O
cracking O
occurs O
using O
the O
theory B-CMT
of I-CMT
plates I-CMT
on I-CMT
a I-CMT
soft I-CMT
foundation I-CMT
. O


this O
methodology O
enables O
weibull B-CMT
plots I-CMT
to O
be O
readily O
obtained O
, O
avoiding O
complex O
freestanding O
- O
film B-DSC
machining B-SMT
processes O
. O


this O
is O
of O
great O
relevance O
, O
since O
the O
mechanical B-PRO
strength I-PRO
of O
thin B-DSC
films I-DSC
ultimately O
controls O
their O
reliable O
use O
in O
a O
broad O
range O
of O
functional O
uses O
such O
as O
tribological B-APL
coatings I-APL
, O
magnetic B-APL
drives I-APL
, O
MEMS B-APL
and O
biomedical B-APL
applications I-APL
. O


structural B-PRO
, O
thermal B-PRO
, O
dielectric B-PRO
and O
ac B-PRO
conductivity I-PRO
properties I-PRO
of O
lithium B-MAT
fluoro-borate I-MAT
optical B-APL
glasses I-APL


transparent B-PRO
and O
stable B-PRO
glasses B-DSC
in O
the O
chemical B-PRO
composition I-PRO
of O
Li2O B-MAT
– I-MAT
FLi I-MAT
– I-MAT
B2O3 I-MAT
– I-MAT
MO I-MAT
( I-MAT
m I-MAT
= I-MAT
Zn I-MAT
and I-MAT
Cd I-MAT
) I-MAT
have O
been O
prepared O
by O
a O
conventional O
melt B-SMT
quenching I-SMT
method I-SMT
. O


for O
these O
glasses B-DSC
, O
absorption B-CMT
spectra I-CMT
, O
structural B-PRO
( O
XRD B-CMT
, O
FT-IR B-CMT
, O
and O
raman B-CMT
spectra O
) O
, O
thermal B-PRO
( O
TG B-CMT
– I-CMT
DTA I-CMT
and O
DSC B-CMT
) O
, O
dielectric B-PRO
( O
e' B-PRO
, O
e'' B-PRO
, O
tand B-PRO
) O
, O
ac B-PRO
conductivity I-PRO
( O
sac B-PRO
) O
, O
and O
electric B-PRO
modulus I-PRO
( O
M' B-PRO
and O
M'' B-PRO
) O
have O
been O
investigated O
. O


amorphous B-DSC
nature O
of O
these O
glasses B-DSC
has O
been O
confirmed O
from O
their O
XRD B-CMT
profiles O
. O


the O
LFB B-MAT
glasses B-DSC
with O
the O
presence O
of O
OZn B-MAT
or O
CdO B-MAT
an O
extended O
UV B-PRO
- I-PRO
transmission I-PRO
ability I-PRO
has O
been O
achieved O
. O


the O
measured O
FT-IR B-CMT
and O
raman B-CMT
spectra O
have O
exhibited O
the O
vibrational O
bands O
of O
B B-MAT
– O
O O
from O
[BO3] B-MAT
and O
[BO4] B-MAT
units O
and O
Li B-MAT
– O
O O
. O


the O
dielectric B-PRO
properties I-PRO
( O
tand B-PRO
, O
dielectric B-PRO
constant I-PRO
( O
e' B-PRO
) O
, O
dielectric B-PRO
loss I-PRO
( O
e'' B-PRO
) O
) O
, O
electrical B-PRO
modulus I-PRO
and O
electrical B-PRO
conductivity I-PRO
( O
sac B-PRO
) O
of O
these O
glasses B-DSC
have O
also O
been O
studied O
from O
<nUm> O
Hz O
to O
1MHz O
at O
the O
room O
temperature O
. O


based O
on O
the O
trends O
noticed O
in O
the O
ac B-PRO
conductivities I-PRO
, O
the O
present O
glasses B-DSC
could O
be O
found O
useful O
as O
battery B-APL
cathode I-APL
materials O
. O


improvement O
of O
radiation B-PRO
stability I-PRO
of O
semi-insulating B-PRO
gallium B-MAT
arsenide I-MAT
crystals B-DSC
by O
deposition O
of O
diamond B-MAT
- I-MAT
like I-MAT
carbon I-MAT
films B-DSC


we O
studied O
the O
properties O
of O
optical B-APL
elements I-APL
for O
the O
IR O
spectral O
range O
based O
on O
semi-insulating B-PRO
gallium B-MAT
arsenide I-MAT
( O
SI B-PRO
- O
AsGa B-MAT
) O
and O
antireflecting B-PRO
diamond B-MAT
- I-MAT
like I-MAT
carbon I-MAT
films B-DSC
( O
DLCF B-MAT
) O
. O


particular O
attention O
has O
been O
paid O
to O
the O
effect O
of O
penetrating O
g-radiation B-SMT
on O
transmission B-PRO
of O
the O
developed O
optical B-APL
elements I-APL
. O


A O
co60 B-MAT
source O
and O
step O
- O
by O
- O
step O
gaining O
of O
g-irradiation B-SMT
dose O
were O
used O
for O
treatment O
of O
both O
an O
initial O
SI B-PRO
- O
AsGa B-MAT
crystal B-DSC
and O
DLCF B-MAT
/ O
SI B-PRO
- O
AsGa B-MAT
structures O
. O


it O
was O
shown O
that O
DLCF B-MAT
deposition O
essentially O
increases O
degradation B-PRO
resistance I-PRO
of O
the O
SI B-PRO
- O
AsGa B-MAT
- O
based O
optical B-APL
elements I-APL
to O
g-radiation B-SMT
. O


particularly O
, O
the O
transmittance B-PRO
of O
the O
DLCF B-MAT
/ O
SI B-PRO
- O
AsGa B-MAT
structure O
after O
g-irradiation B-SMT
with O
a O
dose O
9[?]104 O
Gy O
even O
exceeds O
that O
of O
initial O
structures O
. O


the O
possible O
mechanism O
that O
explains O
the O
effect O
of O
g-radiation B-SMT
on O
the O
SI B-PRO
- O
AsGa B-MAT
crystals B-DSC
and O
the O
DLCF B-MAT
/ O
SI B-PRO
- O
AsGa B-MAT
structures O
at O
different O
irradiation B-SMT
doses O
was O
proposed O
. O


the O
effect O
of O
small O
doses O
is O
responsible O
for O
non-monotonic O
transmission O
changes O
in O
both O
SI B-PRO
- O
AsGa B-MAT
crystals B-DSC
and O
DLCF B-MAT
/ O
SI B-PRO
- O
AsGa B-MAT
structures O
. O


At O
further O
increasing O
the O
g-irradiation B-SMT
dose O
, O
the O
variation O
of O
properties O
of O
both O
DLCF B-MAT
and O
SI B-PRO
- O
AsGa B-MAT
crystal B-DSC
influences O
on O
the O
transmission B-PRO
of O
DLCF B-MAT
/ O
SI B-PRO
- O
AsGa B-MAT
system O
. O


At O
high O
g-irradiation B-SMT
dose O
1.4[?]105 O
Gy O
, O
passivation O
of O
radiation O
defects O
in O
the O
SI B-PRO
- O
AsGa B-MAT
bulk B-DSC
by O
hydrogen O
diffused O
from O
DLCF B-MAT
leads O
to O
increasing O
the O
degradation B-PRO
resistance I-PRO
of O
the O
SI B-PRO
- O
AsGa B-MAT
crystals B-DSC
coated B-SMT
with O
DLCF B-MAT
as O
compared O
with O
the O
crystals B-DSC
without O
DLCF B-MAT
. O


synthesis O
and O
photocatalytic B-PRO
properties I-PRO
of O
zn2+ O
doped B-DSC
anatase B-SPL
O2Ti B-MAT
nanofibers B-DSC


zn2+ O
doped B-DSC
O2Ti B-MAT
nanofibers B-DSC
were O
prepared O
by O
electrospinning B-SMT
followed O
by O
calcination B-SMT
. O


the O
results O
of O
TGA B-CMT
, O
FE B-CMT
- I-CMT
SEM I-CMT
, O
XRD B-CMT
and O
XPS B-CMT
indicated O
that O
the O
obtained O
nanofibers B-DSC
with O
diameter O
in O
range O
of O
<nUm> O
– O
<nUm> O
nm O
were O
composed O
of O
anatase B-SPL
O2Ti B-MAT
phase O
and O
zn2+ O
doping B-SMT
in O
O2Ti B-MAT
did O
not O
distort O
the O
pristine O
crystal B-PRO
structure I-PRO
of O
O2Ti B-MAT
. O


besides O
methylene O
blue O
( O
MB O
) O
was O
employed O
to O
investigate O
photocatalytic B-PRO
properties I-PRO
of O
the O
obtained O
samples O
. O


the O
results O
revealed O
that O
zn2+ O
doped B-DSC
O2Ti B-MAT
nanofibers B-DSC
had O
excellent O
photocatalytic B-PRO
activity I-PRO
, O
which O
was O
symbolized O
by O
an O
optimum O
photodegradation B-PRO
efficiency I-PRO
of O
<nUm> O
% O
under O
zn2+ B-PRO
doping I-PRO
concentration I-PRO
of O
<nUm> O
at. O
% O
. O


the O
photocatalytic B-PRO
efficiency I-PRO
of O
<nUm> O
at. O
% O
zn2+ O
doped B-DSC
O2Ti B-MAT
nanofibers B-DSC
still O
exceeded O
<nUm> O
% O
after O
using O
for O
five O
times O
. O


optimized O
Ti B-MAT
polishing B-SMT
techniques O
for O
enhanced O
order O
in O
O2Ti B-MAT
NT B-DSC
arrays I-DSC


A O
study O
of O
chemical O
and O
electrochemical B-SMT
polishing I-SMT
, O
with O
and O
without O
<nUm> O
step O
anodization B-SMT
, O
intending O
to O
evaluate O
the O
effect O
of O
the O
surface B-PRO
roughness I-PRO
on O
O2Ti B-MAT
nanotube B-DSC
arrays I-DSC
formation O
and O
in O
dye B-APL
- I-APL
sensitized I-APL
solar I-APL
cells I-APL
performance O
is O
performed O
. O


titanium B-MAT
foil B-DSC
substrates I-DSC
were O
chemically B-SMT
polished I-SMT
( O
CP B-SMT
) O
and O
electrochemically B-SMT
polished I-SMT
( O
EL B-SMT
) O
prior O
to O
the O
anodization B-SMT
process O
for O
nanotube B-DSC
growth O
. O


the O
effect O
of O
the O
polishing B-SMT
treatments I-SMT
on O
the O
nanotube B-DSC
arrays I-DSC
morphology B-PRO
was O
analyzed O
by O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
characterization O
. O


dye B-APL
sensitized I-APL
solar I-APL
cells I-APL
( O
DSSCs B-APL
) O
were O
fabricated O
, O
with O
the O
produced O
nanotube B-DSC
arrays I-DSC
, O
and O
characterized O
intending O
to O
evaluate O
the O
effect O
of O
the O
Ti B-MAT
foil B-DSC
substrate I-DSC
surface I-DSC
polishing B-SMT
treatment O
on O
the O
device B-PRO
conversion I-PRO
efficiency I-PRO
. O


photocurrent B-PRO
density I-PRO
– I-PRO
voltage I-PRO
characteristics I-PRO
( O
J B-PRO
– I-PRO
V I-PRO
curves I-PRO
) O
were O
measured O
under O
AM1 O
illumination O
at O
room O
temperature O
and O
the O
devices O
photocurrent B-PRO
density I-PRO
( O
jsc B-PRO
) O
, O
open B-PRO
circuit I-PRO
voltage I-PRO
( O
voc B-PRO
) O
, O
fill B-PRO
factor I-PRO
( O
FF B-PRO
) O
, O
efficiency B-PRO
( O
% O
) O
and O
parallel B-PRO
resistance I-PRO
( O
RSH B-PRO
) O
values O
were O
extracted O
. O


the O
best O
results O
are O
obtained O
for O
the O
chemical B-SMT
polishing I-SMT
process O
where O
nanotube B-DSC
arrays I-DSC
without O
bundles O
and O
without O
“ O
nanograss B-DSC
” O
presence O
were O
obtained O
promoting O
higher O
DSSCs B-APL
photocurrent B-PRO
density I-PRO
values O
. O


these O
results O
emphasize O
the O
importance O
of O
a O
plane O
and O
smooth O
titanium B-MAT
substrate B-DSC
surface I-DSC
for O
nanotubes B-DSC
synthesis O
and O
further O
device O
processing O
. O


complex O
impedance B-PRO
of O
electrochemical B-APL
cells I-APL
based O
on O
yttria B-MAT
doped B-DSC
thoria B-MAT


In O
the O
frequency O
range O
<nUm> O
− O
<nUm> O
– O
<nUm> O
Hz O
and O
the O
temperature O
interval O
<nUm> O
– O
<nUm> O
° O
C O
, O
the O
impedance B-PRO
diagram I-PRO
of O
a O
symmetrical O
cell B-APL
based O
on O
yttria B-MAT
doped B-DSC
thoria B-MAT
is O
composed O
of O
three O
semicircles O
, O
the O
influence O
of O
the O
geometrical B-PRO
factor I-PRO
of O
the O
thoria B-MAT
samples O
indicates O
that O
the O
two O
low O
frequency O
semicircles O
characterize O
interface O
processes O
. O


the O
electrical B-PRO
resistance I-PRO
of O
the O
electrolyte B-APL
is O
determined O
by O
the O
low O
frequency O
intercept O
of O
the O
high O
frequency O
semicircle O
with O
the O
real O
axis O
. O


the O
electronic B-PRO
conductivity I-PRO
of O
thoria B-MAT
based O
solid B-DSC
solutions I-DSC
deduced O
from O
the O
variation O
of O
this O
point O
obeys O
the O
law O
s+ B-PRO
= O
kP O
O O
<nUm> O
<nUm> O
<nUm> O
. O


ionic B-PRO
conductivity I-PRO
measured O
as O
a O
function O
of O
the O
oxide B-PRO
vacancy I-PRO
concentration I-PRO
and O
the O
relevant O
activation B-PRO
energies I-PRO
are O
also O
reported O
. O


an O
aging B-SMT
process O
was O
observed O
on O
this O
material O
. O


effect O
of O
calcination B-SMT
on O
structural B-PRO
, O
morphological B-PRO
and O
photoelectrochemical B-PRO
performance I-PRO
of O
O2Sn B-MAT
/ O
O2Ti B-MAT
nanostructure B-DSC
films I-DSC


In O
the O
present O
work O
, O
one O
dimensional O
rutile-TiO2nanoneedles B-MAT
( O
NNs B-DSC
) O
and O
nanorods B-DSC
( O
NRs B-DSC
) O
were O
grown O
directly O
on O
transparent B-PRO
conductive I-PRO
fluorine O
- O
doped B-DSC
O2Sn B-MAT
- O
coated B-DSC
( O
FTO B-MAT
) O
glass B-DSC
substrates I-DSC
by O
chemical B-SMT
bath I-SMT
deposition I-SMT
( O
CBD B-SMT
) O
method O
using O
titanium B-MAT
( I-MAT
III I-MAT
) I-MAT
chloride I-MAT
as O
the O
precursor O
, O
followed O
by O
calcination B-SMT
at O
two O
different O
temperatures O
. O


the O
heat B-SMT
treatment I-SMT
leads O
to O
the O
conversion O
of O
O2Ti B-MAT
nanoneedles B-DSC
into O
nanorods B-DSC
with O
reduction O
in O
length O
and O
enhancement O
in O
diameter O
. O


the O
O2Ti B-MAT
nanostructure B-DSC
displayed O
a O
diameter O
range O
of O
<nUm> O
– O
<nUm> O
nm O
and O
a O
length O
range O
of O
<nUm> O
– O
<nUm> O
nm O
. O


the O
photoelectrochemical B-CMT
evaluation I-CMT
showed O
that O
rutile B-SPL
- O
O2Ti B-MAT
nanostructure B-DSC
exhibited O
excellent O
stability B-PRO
upon O
annealing B-SMT
in O
a O
temperature O
range O
of O
<nUm> O
– O
<nUm> O
° O
C O
. O


optical B-CMT
studies I-CMT
showed O
that O
rutile B-SPL
- O
O2Ti B-MAT
nanostructure B-DSC
has O
a O
high O
absorption B-PRO
coefficient I-PRO
and O
a O
direct B-PRO
band I-PRO
gap I-PRO
. O


the O
band B-PRO
gap I-PRO
decreased O
slightly O
( O
<nUm> O
– O
<nUm> O
eV O
) O
with O
increasing O
calcination B-SMT
temperature O
. O


the O
ease O
of O
deposition O
of O
rutile B-SPL
- O
O2Ti B-MAT
nanostructure B-DSC
with O
different O
morphologies B-PRO
at O
low O
temperature O
provides O
a O
new O
insight O
for O
potential O
applications O
in O
solar B-APL
cells I-APL
, O
sensors B-APL
, O
catalysis B-APL
and O
separation B-APL
technology I-APL
. O


interface B-PRO
phonons I-PRO
in O
AsGa B-MAT
/ O
AlAs B-MAT
superlattices B-DSC
studied O
by O
micro-raman B-CMT
spectroscopy I-CMT


In O
AsGa B-MAT
/ O
AlAs B-MAT
superlattices B-DSC
there O
exist O
so O
- O
called O
interface B-PRO
phonons I-PRO
with O
frequencies O
in O
between O
those O
of O
the O
bulk B-DSC
TO B-PRO
and O
LO B-PRO
phonon I-PRO
modes I-PRO
. O


using O
micro-Raman B-CMT
spectroscopy I-CMT
we O
were O
able O
to O
study O
the O
energy B-PRO
dispersion I-PRO
of O
these O
interface B-PRO
phonons I-PRO
as O
a O
function O
of O
the O
in-plane B-PRO
momentum I-PRO
transfer I-PRO
qII I-PRO
( O
<nUm> O
≤ O
qII B-PRO
≤ O
<nUm> O
× O
<nUm> O
cm-1 O
) O
. O


the O
results O
are O
compared O
to O
calculations O
based O
on O
the O
dielectric B-CMT
continuum I-CMT
model I-CMT
. O


formation O
of O
different O
micro-morphologies B-PRO
from O
O2V B-MAT
and O
OZn B-MAT
crystallization O
using O
macro-porous B-DSC
silicon B-MAT
substrates B-DSC


square O
- O
shaped O
macropores B-PRO
produced O
by O
electrochemical B-SMT
anodization I-SMT
of O
n- B-PRO
and O
p B-PRO
- I-PRO
type I-PRO
Si B-MAT
wafers B-DSC
have O
been O
used O
as O
centers O
of O
nucleation O
to O
crystallize O
O2V B-MAT
and O
OZn B-MAT
. O


substrate B-DSC
roughness B-PRO
dependent O
formation O
of O
different O
morphologies B-PRO
is O
revealed O
in O
the O
form O
of O
squared B-DSC
particles I-DSC
, O
spheres B-DSC
, O
bars B-DSC
and O
ribbons B-DSC
in O
the O
case O
of O
O2V B-MAT
and O
hexagonal B-DSC
piles I-DSC
and O
spheres B-DSC
in O
the O
case O
of O
OZn B-MAT
, O
have O
been O
observed.The O
presence O
of O
nano- B-DSC
/ O
micro-metric B-DSC
crystals I-DSC
was O
studied O
through O
field B-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
and O
energy B-CMT
dispersive I-CMT
x-ray I-CMT
spectroscopy I-CMT
mapping I-CMT
. O


crystal B-PRO
structure I-PRO
of O
metal B-MAT
oxides I-MAT
was O
confirmed O
by O
micro-Raman B-CMT
spectroscopy I-CMT
. O


the O
growth O
of O
the O
different O
morphologies B-PRO
has O
been O
explained O
in O
terms O
of O
the O
surface B-PRO
free I-PRO
energy I-PRO
of O
a O
bare O
Si B-MAT
/ O
O2Si B-MAT
substrate B-DSC
and O
its O
modification O
originated O
from O
the O
roughness B-PRO
of O
the O
surface B-DSC
and O
of O
the O
walls O
of O
the O
porous B-DSC
substrates I-DSC
. O


this O
energy O
plays O
a O
crucial O
role O
on O
the O
minimization O
of O
the O
required O
energy O
to O
induce O
heterogeneous O
nucleation O
and O
crystal B-DSC
growth O
. O


present O
work O
strengthens O
and O
provides O
an O
experimental O
evidence O
of O
roughness B-PRO
dependent O
metal B-MAT
oxide I-MAT
crystal B-DSC
growth O
with O
well O
- O
defined O
habits O
from O
pore O
corners O
and O
rough O
sides O
of O
the O
pore B-PRO
walls I-PRO
, O
similar O
to O
already O
reported O
protein O
crystals B-DSC
. O


preparation O
of O
surface B-SMT
– I-SMT
modified I-SMT
lanthanum B-MAT
fluoride I-MAT
– O
graphene B-MAT
oxide I-MAT
nanohybrids B-DSC
and O
evaluation O
of O
their O
tribological B-PRO
properties I-PRO
as O
lubricant B-APL
additive I-APL
in O
liquid B-APL
paraffin I-APL


oleic B-SMT
acid I-SMT
surface I-SMT
– I-SMT
modified I-SMT
lanthanum B-MAT
trifluoride I-MAT
– O
graphene B-MAT
oxide I-MAT
( O
OA O
– O
F3La B-MAT
– O
GO B-MAT
) O
nanohybrids B-DSC
were O
successfully O
prepared O
by O
surface B-SMT
modification I-SMT
technology I-SMT
. O


the O
morphology B-PRO
and O
phase B-PRO
structure I-PRO
of O
as-prepared B-DSC
samples O
were O
analyzed O
by O
means O
of O
x-ray B-CMT
diffraction I-CMT
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
, O
fourier B-CMT
transform I-CMT
infrared I-CMT
spectrometry I-CMT
, O
raman B-CMT
spectrometry I-CMT
and O
thermogravimetry B-CMT
. O


the O
results O
revealed O
that O
OA O
were O
bonded O
onto O
the O
surface B-DSC
of O
F3La B-MAT
– O
GO B-MAT
nanohybrids B-DSC
. O


subsequently O
, O
the O
tribological B-PRO
properties I-PRO
of O
OA O
– O
F3La B-MAT
– O
GO B-MAT
nanohybrids B-DSC
as O
lubricant B-APL
additive I-APL
in O
liquid O
paraffin O
were O
evaluated O
with O
a O
four B-CMT
- I-CMT
ball I-CMT
machine I-CMT
, O
and O
the O
morphology B-PRO
and O
elemental B-PRO
composition I-PRO
of O
worn O
steel B-MAT
surfaces B-DSC
were O
examined O
on O
a O
scanning B-CMT
electron I-CMT
microscope I-CMT
with O
an O
energy B-CMT
dispersive I-CMT
spectrometer I-CMT
. O


tribological B-PRO
results O
showed O
that O
OA O
– O
F3La B-MAT
– O
GO B-MAT
nanohybrids B-DSC
had O
excellent O
friction B-PRO
reduction O
and O
antiwear B-PRO
ability I-PRO
at O
the O
loading O
of O
0.5wt. O
% O
OA O
– O
F3La B-MAT
– O
GO B-MAT
nanohybrids B-DSC
, O
compared O
to O
liquid O
paraffin O
alone O
. O


the O
results O
of O
energy B-CMT
dispersive I-CMT
spectrometer I-CMT
revealed O
that O
improved O
tribological B-PRO
properties I-PRO
resulted O
from O
OA O
– O
F3La B-MAT
– O
GO B-MAT
could O
transfer O
to O
the O
rubbed O
steel B-MAT
surface B-DSC
and O
decompose O
to O
form O
protective B-APL
layers I-APL
, O
which O
help O
to O
improve O
tribological B-PRO
properties I-PRO
. O


microstructure B-PRO
of O
O3Y2 B-MAT
doped B-DSC
Al2O3 B-MAT
– I-MAT
O2Zr I-MAT
eutectics B-DSC
grown O
by O
the O
laser B-SMT
floating I-SMT
zone I-SMT
method O


Al2O3 B-MAT
– I-MAT
O2Zr I-MAT
eutectics B-DSC
containing O
<nUm> O
mol O
% O
O3Y2 B-MAT
( O
with O
respect O
to O
zirconia B-MAT
) O
were O
produced O
by O
directional B-SMT
solidification I-SMT
using O
the O
laser B-SMT
floating I-SMT
zone I-SMT
( I-SMT
LFZ I-SMT
) I-SMT
method I-SMT
. O


the O
eutectic O
microstructures B-PRO
were O
investigated O
as O
a O
function O
of O
the O
growth O
variables O
. O


using O
a O
solidification O
- O
axis O
thermal O
gradient O
of O
<nUm> O
° O
C O
/ O
mm O
a O
homogeneous O
, O
colony O
- O
free O
, O
interpenetrating O
lamellar O
microstructure B-PRO
was O
obtained O
for O
growth O
rates O
less O
than O
<nUm> O
mm O
/ O
h O
. O


higher O
growth O
rates O
produce O
cellular O
structures O
. O


colonies O
grew O
with O
the O
[0001] O
alumina B-MAT
and O
the O
[110] O
zirconia B-MAT
axis O
parallel O
to O
the O
growth O
direction O
. O


the O
uniform O
lamellar O
microstructure B-PRO
obtained O
at O
low O
growth O
rates O
is O
stable O
during O
thermal B-SMT
treatment I-SMT
at O
<nUm> O
° O
C O
. O


comparison O
of O
HIPIMS B-SMT
sputtered I-SMT
ag- B-MAT
and O
Cu B-MAT
- O
surfaces B-DSC
leading O
to O
accelerated O
bacterial B-APL
inactivation I-APL
in O
the O
dark O


recently O
, O
compact O
uniform O
and O
adhesive B-PRO
films B-DSC
of O
Ag B-MAT
and O
Cu B-MAT
have O
been O
prepared O
by O
DC B-SMT
- I-SMT
magnetron I-SMT
sputtering I-SMT
( O
DC B-SMT
) O
, O
pulsed B-SMT
DC I-SMT
magnetron I-SMT
sputtering I-SMT
( O
DCP B-SMT
) O
and O
high B-SMT
power I-SMT
impulse I-SMT
magnetron I-SMT
sputtering I-SMT
( O
HIPIMS B-SMT
) O
. O


this O
study O
reports O
the O
HIPIMS B-SMT
deposition O
for O
Ag B-MAT
and O
Cu B-MAT
on O
textile O
fabrics O
, O
the O
bacterial B-PRO
inactivation I-PRO
kinetics I-PRO
and O
the O
nature O
of O
the O
species O
in O
the O
plasma O
produced O
during O
HIPIMS B-SMT
sputtering I-SMT
. O


the O
deposition O
rates O
of O
Ag B-MAT
and O
Cu B-MAT
atoms O
and O
the O
bacterial B-PRO
inactivation I-PRO
times I-PRO
are O
reported O
in O
the O
dark O
and O
under O
light O
as O
a O
function O
of O
the O
applied O
peak O
currents O
during O
the O
sputtering B-SMT
by O
HIPIMS B-SMT
. O


by O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
, O
the O
surface B-PRO
percentage I-PRO
atomic I-PRO
concentration I-PRO
and O
the O
oxidation B-PRO
state I-PRO
changes O
are O
reported O
during O
bacterial B-APL
inactivation I-APL
. O


the O
Ar O
and O
metal B-PRO
- O
ions O
produced O
in O
the O
magnetron O
chamber O
were O
determined O
by O
mass B-CMT
spectroscopy I-CMT
( O
QMS B-CMT
) O
. O


A O
mechanism O
for O
the O
bacterial B-APL
inactivation I-APL
is O
suggested O
for O
Ag B-MAT
and O
Cu B-MAT
HIPIMS B-SMT
sputtered I-SMT
surfaces B-DSC
. O


magnetic B-PRO
and O
dielectric B-PRO
interactions I-PRO
in O
nano B-DSC
zinc B-MAT
ferrite I-MAT
powder B-DSC
: O
prepared O
by O
self B-SMT
- I-SMT
sustainable I-SMT
propellant I-SMT
chemistry I-SMT
technique I-SMT


the O
structural B-PRO
, O
magnetic B-PRO
and O
dielectric B-PRO
properties I-PRO
of O
nano B-DSC
zinc B-MAT
ferrite I-MAT
prepared O
by O
the O
propellant B-SMT
chemistry I-SMT
technique I-SMT
are O
studied O
. O


the O
PXRD B-CMT
measurement O
at O
room O
temperature O
reveal O
that O
the O
compound O
is O
in O
cubic B-SPL
spinel I-SPL
phase O
, O
belong O
to O
the O
space O
group O
fd-3m B-SPL
. O


the O
unit B-PRO
cell I-PRO
parameters I-PRO
have O
been O
estimated O
from O
rietveld B-CMT
refinement I-CMT
. O


the O
calculated O
force B-PRO
constants I-PRO
from O
FTIR B-CMT
spectrum O
corresponding O
to O
octahedral O
and O
tetrahedral O
sites O
at O
<nUm> O
and O
<nUm> O
cm-1 O
are O
<nUm> O
× O
<nUm> O
and O
<nUm> O
× O
<nUm> O
nm-1 O
respectively O
; O
these O
values O
are O
slightly O
higher O
compared O
to O
the O
other O
ferrite B-MAT
systems O
. O


magnetic B-PRO
hysteresis I-PRO
and O
EPR B-CMT
spectra O
show O
superparamagnetic B-PRO
property I-PRO
nearly O
to O
room O
temperature O
due O
to O
comparison O
values O
between O
magnetic B-PRO
anisotropy I-PRO
energy I-PRO
and O
the O
thermal B-PRO
energy I-PRO
. O


the O
calculated O
values O
of O
saturation B-PRO
magnetization I-PRO
, O
remenant B-PRO
magnetization I-PRO
, O
coercive B-PRO
field I-PRO
and O
magnetic B-PRO
moment I-PRO
supports O
for O
the O
existence O
of O
multi B-DSC
domain I-DSC
particles I-DSC
in O
the O
sample O
. O


the O
temperature O
dependent O
magnetic O
field O
shows O
the O
spin B-PRO
freezing I-PRO
state I-PRO
at O
30K O
and O
the O
blocking B-PRO
temperature I-PRO
at O
above O
room O
temperature O
. O


the O
frequency O
dependent O
dielectric B-PRO
interactions I-PRO
show O
the O
variation O
of O
dielectric B-PRO
constant I-PRO
, O
dielectric B-PRO
loss I-PRO
and O
impedance B-PRO
as O
similar O
to O
other O
ferrite B-MAT
systems O
. O


the O
AC B-PRO
conductivity I-PRO
in O
the O
prepared O
sample O
is O
due O
to O
the O
presence O
of O
electrons O
, O
holes O
and O
polarons O
. O


the O
synthesized O
material O
is O
suitable O
for O
nano-electronics B-APL
and O
biomedical B-APL
applications I-APL
. O


the O
Y B-MAT
– I-MAT
Ag I-MAT
– I-MAT
Al I-MAT
system O


the O
interaction O
between O
the O
components O
in O
the O
Y B-MAT
– I-MAT
Ag I-MAT
– I-MAT
Al I-MAT
system O
at O
<nUm> O
K O
has O
been O
studied O
using O
x-ray B-CMT
analysis I-CMT
. O


the O
phase B-PRO
diagram I-PRO
in O
the O
region O
up O
to O
<nUm> O
at. O
% O
of O
yttrium B-MAT
has O
been O
constructed O
. O


the O
limits O
of O
the O
solid B-DSC
solution I-DSC
regions O
of O
the O
binary O
compounds O
and O
the O
homogeneity O
ranges O
of O
the O
ternary O
ones O
have O
been O
determined O
. O


the O
crystal B-PRO
structures I-PRO
of O
the O
ternary O
aluminides B-MAT
Ag2Al7Y3 I-MAT
( O
Al7Ca3Cu2 B-SPL
- O
type O
structure O
, O
space O
group O
r B-SPL
<nUm> I-SPL
m I-SPL
, O
a B-PRO
= O
<nUm> O
, O
c B-PRO
= O
<nUm> O
nm O
) O
and O
Ag3Al7Y5 B-MAT
( O
Hg2K B-SPL
- O
type O
structure O
, O
space O
group O
imma B-SPL
, O
a B-PRO
= O
<nUm> O
, O
b B-PRO
= O
<nUm> O
, O
c B-PRO
= O
<nUm> O
nm O
) O
have O
been O
studied O
for O
the O
first O
time O
. O


resonators B-APL
and O
filters B-APL
made O
of O
BaCuOY B-MAT
thin B-DSC
films I-DSC
on O
sapphire B-MAT
wafers B-DSC


<nUm> O
– O
<nUm> O
nm O
thick O
BaCuOY B-MAT
thin B-DSC
films I-DSC
with O
c-axis O
orientation O
were O
simultaneously O
deposited O
by O
sputtering B-SMT
of O
sintered B-SMT
hollow B-DSC
cylinders I-DSC
on O
both O
sides O
of O
CeO2 B-MAT
buffered O
r-cut B-DSC
sapphire B-MAT
wafers B-DSC
with O
a O
diameter O
of O
<nUm> O
inch O
. O


microstrip B-APL
resonators I-APL
and O
filters B-APL
were O
manufactured O
to O
study O
the O
microwave B-PRO
properties I-PRO
of O
the O
films B-DSC
at O
<nUm> O
K O
in O
the O
frequency O
band O
from O
<nUm> O
to O
<nUm> O
GHz O
which O
is O
relevant O
to O
satellite B-APL
communication I-APL
. O


At O
linear O
response O
the O
resonance B-PRO
curve I-PRO
of O
the O
transmission B-APL
resonators I-APL
could O
perfectly O
be O
described O
by O
a O
lorentz B-CMT
function I-CMT
. O


very O
high O
values O
of O
the O
unloaded O
quality B-PRO
factor I-PRO
, O
Q0 B-PRO
, O
of O
up O
to O
<nUm> O
were O
reached O
at O
<nUm> O
GHz O
. O


At O
nonlinear O
response O
Q0 B-PRO
decreased O
due O
to O
the O
power O
dependence O
of O
the O
surface B-PRO
resistance I-PRO
of O
the O
BaCuOY B-MAT
films B-DSC
which O
steeply O
increased O
at O
an O
oscillating O
power O
of O
several O
watts O
corresponding O
to O
a O
critical B-PRO
surface I-PRO
magnetic I-PRO
field I-PRO
of O
about O
<nUm> O
mT O
. O


the O
seven- O
and O
three O
- O
pole O
bandpass B-APL
filters I-APL
with O
center O
frequencies O
of O
<nUm> O
and O
<nUm> O
GHz O
, O
respectively O
, O
showed O
a O
low O
attenuation B-PRO
of O
less O
than O
− O
<nUm> O
dB O
in O
the O
pass O
band O
. O


the O
results O
manifest O
that O
sputtering B-SMT
is O
a O
qualified O
and O
reliable O
method O
for O
large O
- O
area O
deposition O
of O
BaCuOY B-MAT
thin B-DSC
films I-DSC
which O
are O
suitable O
for O
microwave B-APL
applications I-APL
. O


effects O
of O
nitrogen B-PRO
concentration I-PRO
on O
N O
- O
doped B-DSC
anatase B-SPL
O2Ti B-MAT
: O
density B-CMT
functional I-CMT
theory I-CMT
and O
hubbard B-CMT
U I-CMT
analysis I-CMT


to O
fully O
comprehend O
the O
photocatalytic B-PRO
mechanisms I-PRO
of O
anatase B-SPL
TiO2-xNx B-MAT
of O
various O
nitrogen B-PRO
concentrations I-PRO
, O
this O
study O
performed O
first B-CMT
principles I-CMT
calculations I-CMT
based O
on O
density B-CMT
functional I-CMT
theory I-CMT
, O
employing O
hubbard B-CMT
U I-CMT
on I-CMT
- I-CMT
site I-CMT
correction I-CMT
, O
to O
evaluate O
the O
crystal B-PRO
structure I-PRO
, O
impurity B-PRO
formation I-PRO
energy I-PRO
, O
and O
electronic B-PRO
structure I-PRO
. O


an O
effective O
hubbard B-PRO
U I-PRO
of O
<nUm> O
eV O
was O
adopted O
to O
correctly O
determine O
the O
band B-PRO
gap I-PRO
of O
pure O
anatase B-SPL
O2Ti B-MAT
. O


the O
calculations O
show O
that O
increasing O
the O
concentration B-PRO
of I-PRO
nitrogen I-PRO
requires O
greater O
formation B-PRO
energy I-PRO
during O
the O
synthesis O
of O
N O
- O
doped B-DSC
O2Ti B-MAT
. O


under O
light O
nitrogen O
doping O
( O
≤ O
6.25at. O
% O
) O
, O
N O
isolated O
impurity O
states O
form O
above O
the O
top O
of O
valence O
band O
meanwhile O
the O
band B-PRO
gap I-PRO
does O
not O
change O
noticeably O
. O


under O
heavy O
nitrogen O
doping O
( O
≥ O
8.33at. O
% O
) O
, O
a O
narrowing O
of O
the O
band B-PRO
gap I-PRO
and O
broadening O
of O
the O
valence O
band O
occur O
, O
which O
might O
explain O
the O
red O
shift O
at O
the O
edge O
of O
the O
optical B-PRO
absorption I-PRO
range O
observed O
in O
some O
experimental O
studies O
. O


these O
findings O
provide O
a O
reasonable O
explanation O
of O
recent O
experimental O
results O
. O


interface B-PRO
charge I-PRO
transport I-PRO
and O
the O
electronic B-PRO
conductivity I-PRO
of O
Ag4I5Rb B-MAT
solid B-APL
electrolytes I-APL


volt B-PRO
- I-PRO
ampere I-PRO
characteristics I-PRO
of O
an O
electrochemical B-APL
cell I-APL
of O
ag| B-MAT
RbAg4I5| I-MAT
C I-MAT
type O
were O
measured O
and O
described O
in O
terms O
of O
a O
model O
assuming O
that O
the O
electron B-PRO
current I-PRO
through O
the O
electrochemical B-APL
cell I-APL
is O
defined O
by O
the O
transfer O
of O
charges O
over O
the O
interface B-DSC
. O


we O
have O
determined O
the O
location O
of O
the O
fermi B-PRO
level I-PRO
and O
measured O
the O
electron B-PRO
conductivity I-PRO
of O
the O
a-phase B-SPL
of O
Ag4I5Rb B-MAT
crystals B-DSC
, O
se B-PRO
= O
<nUm> O
× O
<nUm> O
− O
<nUm> O
S O
cm-1 O
. O


A O
new O
highly O
efficient O
method O
for O
the O
synthesis O
of O
rutile B-SPL
O2Ti B-MAT


A O
new O
highly O
efficient O
method O
has O
been O
developed O
for O
the O
synthesis O
of O
the O
synthesis O
of O
rutile B-SPL
O2Ti B-MAT
from O
titania B-MAT
slag O
. O


high O
quality O
of O
rutile B-SPL
O2Ti B-MAT
were O
obtained O
by O
carrying O
out O
the O
synthesis O
in O
conventional B-SMT
heating I-SMT
method I-SMT
. O


the O
thermal B-PRO
stability I-PRO
, O
crystal B-PRO
structures I-PRO
and O
molecular B-PRO
structures I-PRO
of O
rutile B-SPL
O2Ti B-MAT
and O
titania B-MAT
slag O
before O
and O
after O
treatment O
were O
characterized O
using O
TG B-CMT
/ I-CMT
DTA I-CMT
, O
XRD B-CMT
and O
raman B-CMT
, O
respectively O
. O


the O
results O
of O
TG B-CMT
/ I-CMT
DTG I-CMT
showed O
roasting B-SMT
temperature O
range O
of O
<nUm> O
– O
<nUm> O
° O
C O
was O
used O
in O
the O
further O
research O
work O
in O
order O
to O
transform O
from O
anatase B-SPL
O2Ti B-MAT
to O
rutile B-SPL
O2Ti B-MAT
. O


the O
XRD B-CMT
results O
demonstrate O
that O
a O
rutile B-SPL
O2Ti B-MAT
with O
high O
crystallinity B-PRO
was O
prepared O
. O


with O
increasing O
roasting B-SMT
temperature O
, O
the O
intensity O
of O
raman B-CMT
vibrations O
bands O
of O
anatase B-SPL
O2Ti B-MAT
decrease O
, O
and O
the O
intensity O
of O
raman B-CMT
vibrations O
bands O
of O
rutile B-SPL
O2Ti B-MAT
increase O
. O


based O
on O
the O
mention O
results O
, O
this O
method O
can O
be O
applied O
effectively O
and O
efficiently O
way O
for O
both O
titania B-MAT
slag O
utilization O
and O
rutile B-SPL
O2Ti B-MAT
preparation O
. O


semiconducting B-PRO
properties I-PRO
of O
CuIn5S8 B-MAT
single B-DSC
crystals I-DSC
I O
. O


electrical B-PRO
properties I-PRO


the O
electrical B-PRO
resistivity I-PRO
and O
hall B-PRO
coefficient I-PRO
of O
n B-PRO
- I-PRO
type I-PRO
CuIn5S8 B-MAT
single B-DSC
crystals I-DSC
were O
measured O
in O
the O
temperature O
range O
from O
<nUm> O
K O
– O
<nUm> O
K O
. O


the O
energy B-PRO
gap I-PRO
at O
<nUm> O
K O
was O
determined O
to O
be O
<nUm> O
eV O
. O


the O
donor B-PRO
levels I-PRO
at O
<nUm> O
eV O
and O
<nUm> O
eV O
below O
the O
conduction B-PRO
band I-PRO
are O
identified O
. O


the O
mobility B-PRO
data O
are O
analysed O
assuming O
scatterings O
by O
acoustic B-PRO
and O
polar B-PRO
optical I-PRO
phonons I-PRO
and O
ionized O
impurities O
. O


coordination B-PRO
and O
valence B-PRO
of O
niobium B-MAT
in O
O2Ti B-MAT
NbO2 I-MAT
solid B-DSC
solutions I-DSC
through O
x-ray B-CMT
absorption I-CMT
spectroscopy I-CMT


the O
coordination B-PRO
and O
valence B-PRO
of O
niobium B-MAT
in O
NbO4Ti B-MAT
solid B-DSC
solutions I-DSC
, O
NbxTi1-xO2 B-MAT
( I-MAT
for I-MAT
<nUm> I-MAT
≤ I-MAT
x I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT
, O
were O
studied O
by O
Nb B-MAT
K O
- O
edge O
x-ray B-CMT
absorption I-CMT
spectroscopy I-CMT
( O
XAS B-CMT
) O
as O
a O
function O
of O
Nb B-PRO
composition I-PRO
, O
x O
. O


ten O
single B-DSC
- I-DSC
phase I-DSC
compositions B-PRO
in O
the O
NbxTi1-xO2 B-MAT
solid B-DSC
solution I-DSC
with O
the O
rutile B-SPL
structure O
were O
examined O
: O
x O
= O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
. O


analysis O
of O
x-ray B-CMT
absorption I-CMT
near I-CMT
edge I-CMT
structure I-CMT
( O
XANES B-CMT
) O
data O
shows O
that O
the O
position O
of O
the O
preedge B-PRO
absorption I-PRO
shifts O
to O
higher O
energy O
with O
decreasing O
Nb B-PRO
concentration I-PRO
, O
indicating O
that O
the O
ratio O
of O
nb5+ O
to O
nb4+ O
is O
larger O
at O
low O
Nb B-PRO
concentrations I-PRO
than O
at O
high O
ones O
. O


the O
extended O
x-ray B-CMT
absorption I-CMT
fine I-CMT
structure I-CMT
( O
EXAFS B-CMT
) O
analysis O
indicates O
that O
the O
average O
NbO B-PRO
interatomic I-PRO
distance I-PRO
increases O
nearly O
linearly O
with O
increasing O
Nb B-PRO
concentration I-PRO
. O


this O
structural O
modification O
of O
the O
oxygen O
environment O
about O
niobium B-MAT
suggests O
that O
an O
increasing O
fraction O
of O
Nb B-MAT
ions O
( O
i.e. O
, O
nb5+ O
) O
occupy O
tetrahedral O
interstitial O
sites O
with O
decreasing O
Nb B-PRO
composition I-PRO
. O


device B-PRO
characteristics I-PRO
of O
Ti B-MAT
– I-MAT
InOSn I-MAT
thin B-APL
film I-APL
transistors I-APL
with O
modulated O
double O
and O
triple O
channel O
structures O


the O
device B-PRO
characteristics I-PRO
of O
Ti B-MAT
– I-MAT
InOSn I-MAT
thin B-APL
film I-APL
transistors I-APL
( O
TFTs B-APL
) O
with O
modulated O
channels O
were O
investigated O
. O


the O
field B-PRO
effect I-PRO
mobility I-PRO
was O
enhanced O
to O
<nUm> O
cm2 O
/ O
vs O
in O
the O
channel B-APL
- I-APL
modulated I-APL
TFT I-APL
. O


the O
electrical B-PRO
performance I-PRO
of O
the O
TFT B-APL
device I-APL
was O
improved O
by O
the O
insertion O
of O
a O
high O
carrier O
concentration O
layer O
at O
the O
channel B-APL
/ O
gate B-APL
insulator I-APL
and O
channel B-APL
/ O
electrode B-APL
interfaces B-DSC
. O


it O
was O
due O
to O
the O
enhancement O
of O
carrier B-PRO
accumulation I-PRO
and O
the O
reduction O
of O
parasitic B-PRO
resistance I-PRO
via O
channel O
modulation O
. O


the O
threshold B-PRO
voltage I-PRO
was O
controlled O
at O
moderate O
value O
. O


these O
results O
indicate O
that O
the O
device B-PRO
characteristic I-PRO
of O
TFTs B-APL
can O
be O
enhanced O
by O
the O
modulated O
channel B-APL
structure O
. O


on O
the O
chemical B-PRO
transport I-PRO
of O
cobalt B-MAT
and O
nickel B-MAT
chromites I-MAT


the O
chemical B-PRO
transport I-PRO
of O
CoCr2O4 B-MAT
and O
Cr2NiO4 B-MAT
with O
chlorine O
as O
a O
transport O
agent O
has O
been O
investigated O
. O


on O
the O
basis O
of O
thermodynamic B-CMT
analysis I-CMT
of O
the O
transport O
reactions O
at O
<nUm> O
– O
<nUm> O
K O
it O
has O
been O
established O
that O
the O
gas O
phase O
should O
contain O
Cl O
, O
Cl2CrO2 B-MAT
and O
Cl2Co B-MAT
during O
transport O
of O
CoCr2O4 B-MAT
, O
while O
Cl O
, O
Cl2CrO2 B-MAT
and O
Cl2Ni B-MAT
should O
be O
present O
when O
Cr2NiO4 B-MAT
is O
transported O
. O


within O
the O
same O
temperature O
range O
cobalt B-MAT
chromite I-MAT
should O
be O
transported O
without O
decomposition O
whereas O
nickel B-MAT
chromite I-MAT
would O
probably O
decompose O
at O
high O
temperatures O
and O
a O
low O
total O
pressure O
in O
the O
transport O
system O
. O


octahedral O
single B-DSC
crystals I-DSC
of O
CoCr2O4 B-MAT
with O
a O
spinel B-SPL
structure O
have O
been O
obtained O
whereas O
Cr2NiO4 B-MAT
formed O
octahedra O
and O
plates O
with O
a O
tetragonal B-SPL
structure O
. O


the O
reasons O
of O
the O
differences O
observed O
with O
the O
systems O
CoCr2O4 B-MAT
 O
Cl O
and O
Cr2NiO4 B-MAT
 O
Cl O
have O
been O
discussed O
. O


the O
surface B-PRO
structure I-PRO
of O
ClK B-MAT
and O
PbTe B-MAT
films B-DSC
grown O
on O
mica B-MAT


the O
growth O
of O
ClK B-MAT
and O
PbTe B-MAT
on O
mica B-MAT
substrates B-DSC
is O
briefly O
described O
. O


both O
substances O
grow O
with O
the O
( O
<nUm> O
) O
plane O
parallel O
to O
the O
mica B-MAT
surface B-DSC
. O


A O
slab O
of O
ClNa B-SPL
- O
type O
crystal B-DSC
terminated O
by O
( O
<nUm> O
) O
surfaces B-DSC
would O
be O
highly O
unstable O
, O
and O
a O
pyramid O
with O
{100} O
faces O
and O
a O
( O
<nUm> O
) O
base O
would O
be O
electrically O
charged O
, O
therefore O
an O
alternative O
structure O
is O
considered O
. O


the O
structure B-PRO
of O
the O
mica B-MAT
cleavage O
plane O
suggests O
that O
films B-DSC
of O
ClK B-MAT
and O
PbTe B-MAT
most O
likely O
grow O
with O
a O
“ O
grooved O
” O
( O
<nUm> O
) O
plane O
in O
contact O
with O
the O
mica B-MAT
surface B-DSC
. O


[ O
A O
grooved O
( O
<nUm> O
) O
plane O
is O
one O
in O
which O
alternate O
rows O
of O
atoms O
are O
missing O
. O
] O


there O
are O
two O
dominant O
kinds O
of O
free B-PRO
surface I-PRO
structure I-PRO
to O
choose O
from O
: O
a O
grooved O
( O
<nUm> O
) O
plane O
, O
or O
a O
set O
of O
{100} O
faced O
pyramids O
. O


the O
former O
is O
shown O
to O
be O
likely O
for O
PbTe B-MAT
, O
while O
ClK B-MAT
has O
the O
latter O
type O
of O
surface B-DSC
. O


MoO12Se3Y2 B-MAT
and O
MoO12Te3Y2 B-MAT
: O
solid B-SMT
- I-SMT
state I-SMT
synthesis I-SMT
, O
structure B-PRO
determination O
, O
and O
characterization O
of O
two O
new O
quaternary O
mixed O
metal B-MAT
oxides I-MAT
containing O
asymmetric O
coordination B-PRO
environment I-PRO


two O
new O
quaternary O
yttrium B-MAT
molybdenum I-MAT
selenium I-MAT
/ O
tellurium B-MAT
oxides I-MAT
, O
MoO12Se3Y2 B-MAT
and O
MoO12Te3Y2 B-MAT
have O
been O
prepared O
by O
standard O
solid B-SMT
- I-SMT
state I-SMT
reactions I-SMT
using O
O3Y2 B-MAT
, O
MoO3 B-MAT
, O
and O
O2Se B-MAT
( O
or O
O2Te B-MAT
) O
as O
reagents O
. O


single B-DSC
- I-DSC
crystal I-DSC
x-ray B-CMT
diffraction I-CMT
was O
used O
to O
determine O
the O
crystal B-PRO
structures I-PRO
of O
the O
reported O
materials O
. O


although O
both O
of O
the O
materials O
contain O
second B-CMT
- I-CMT
order I-CMT
jahn I-CMT
– I-CMT
teller I-CMT
( O
SOJT B-CMT
) O
distortive O
cations O
and O
are O
stoichiometrically O
similar O
, O
they O
reveal O
different O
structural B-PRO
features I-PRO
: O
while O
MoO12Se3Y2 B-MAT
shows O
a O
three O
- O
dimensional O
framework O
consisting O
of O
O8Y B-MAT
, O
MoO6 B-MAT
, O
and O
O3Se B-MAT
groups O
, O
MoO12Te3Y2 B-MAT
exhibits O
a O
layered B-DSC
structure O
composed O
of O
O8Y B-MAT
, O
MoO4 B-MAT
, O
O3Te B-MAT
, O
and O
O4Te B-MAT
polyhedra O
. O


with O
the O
mo6+ O
cations O
in O
MoO12Se3Y2 B-MAT
, O
a O
C3 O
- O
type O
intraoctahedral O
distortion O
toward O
a O
face O
is O
observed O
, O
in O
which O
the O
direction O
of O
the O
out O
- O
of O
- O
center O
distortion O
for O
mo6+ O
is O
away O
from O
the O
oxide B-MAT
ligand O
linked O
to O
a O
se4+ O
cation O
. O


the O
se4+ O
and O
te4+ O
cations O
in O
both O
materials O
are O
in O
asymmetric O
coordination O
environment O
attributed O
to O
the O
lone O
pairs O
. O


elemental B-CMT
analyses I-CMT
, O
infrared B-CMT
spectroscopy I-CMT
, O
thermal B-CMT
analyses I-CMT
, O
intraoctahedral B-PRO
distortions I-PRO
, O
and O
dipole B-CMT
moment I-CMT
calculations I-CMT
for O
the O
compounds O
are O
also O
presented O
. O


the O
role O
of O
microstructure B-PRO
in O
the O
mechanical B-PRO
behaviour I-PRO
of O
Ti B-MAT
– I-MAT
1.6wt. I-MAT
% I-MAT
Fe I-MAT
alloys B-DSC
containing O
O O
and O
N O


the O
effects O
of O
small O
changes O
to O
the O
heat B-SMT
treatment I-SMT
temperature O
within O
the O
( O
a+b B-SPL
) O
phase O
field O
on O
the O
room O
temperature O
properties O
of O
a O
Ti B-MAT
– I-MAT
1.6wt. I-MAT
% I-MAT
Fe I-MAT
– I-MAT
0.56wt. I-MAT
% I-MAT
O I-MAT
– I-MAT
0.04wt. I-MAT
% I-MAT
N I-MAT
alloy B-DSC
are O
described O
. O


to O
identify O
contributions O
from O
the O
individual O
alloying B-SMT
elements O
the O
binary O
Ti B-MAT
– I-MAT
1.6wt. I-MAT
% I-MAT
Fe I-MAT
and O
ternary O
Ti B-MAT
– I-MAT
1.6wt. I-MAT
% I-MAT
Fe I-MAT
– I-MAT
0.6wt. I-MAT
% I-MAT
O I-MAT
and O
Ti B-MAT
– I-MAT
1.6wt. I-MAT
% I-MAT
Fe I-MAT
– I-MAT
0.04wt. I-MAT
% I-MAT
N I-MAT
alloys B-DSC
were O
also O
investigated O
. O


it O
was O
found O
that O
the O
interstitial O
elements O
affected O
the O
degree O
of O
disorder B-PRO
in O
the O
oath B-SPL
phase O
, O
and O
that O
the O
magnitude O
of O
this O
disordering O
was O
not O
merely O
consistent O
with O
changes O
in O
Fe B-PRO
concentration I-PRO
. O


the O
strength B-PRO
and O
ductility B-PRO
of O
the O
alloys B-DSC
free O
of O
additional O
nitrogen O
were O
independent O
of O
annealing B-SMT
temperature O
, O
whereas O
the O
alloys B-DSC
containing O
nitrogen O
showed O
a O
marked O
dependency O
on O
the O
temperature O
. O


alloys B-DSC
containing O
nitrogen O
displayed O
a O
prismatic B-PRO
rather O
than O
basal B-PRO
texture I-PRO
after O
processing O
. O


the O
structure B-PRO
and O
composition B-PRO
of O
the O
CdSe B-MAT
- O
( O
oxidized B-SMT
titanium B-MAT
) O
interface B-DSC
: O
an O
investigation O
by O
transmission B-CMT
electron I-CMT
microscopy I-CMT
and O
electron B-CMT
diffraction I-CMT


transmission B-CMT
electron I-CMT
microscopy I-CMT
and O
electron B-CMT
diffraction I-CMT
techniques O
were O
used O
to O
investigate O
the O
composition B-PRO
and O
structure B-PRO
of O
the O
interface B-DSC
layer I-DSC
between O
polycrystalline B-DSC
CdSe B-MAT
films B-DSC
( O
prepared O
by O
slurry B-SMT
painting I-SMT
or O
electrodeposition B-SMT
) O
and O
oxidized B-SMT
titanium B-MAT
substrates B-DSC
used O
as O
photoelectrodes B-APL
. O


the O
findings O
were O
correlated O
with O
the O
adhesion B-PRO
of O
the O
layers B-DSC
. O


compound O
formation O
between O
the O
CdSe B-MAT
and O
O2Ti B-MAT
( O
the O
main O
constituent O
of O
the O
oxidized B-SMT
titanium B-MAT
surface B-DSC
) O
was O
found O
to O
occur O
. O


In O
samples O
which O
showed O
good O
adhesion B-PRO
, O
CdTi B-MAT
intermetallic B-PRO
compounds O
and O
oxides B-MAT
were O
generally O
found O
; O
these O
compounds O
were O
absent O
in O
samples O
exhibiting O
poor O
adhesion B-PRO
. O


optical B-SMT
doping I-SMT
of O
silicon B-MAT
with O
erbium B-MAT
by O
ion B-SMT
implantation I-SMT


new O
procedures O
to O
incorporate O
high O
concentrations O
of O
erbium B-MAT
in O
silicon B-MAT
are O
presented O
, O
together O
with O
measurements O
of O
the O
characteristic O
photoluminiscence B-CMT
at O
<nUm> O
mm O
of O
er3+ O
in O
silicon B-MAT
. O


Er B-MAT
- O
doped B-DSC
amorphous I-DSC
Si B-MAT
was O
prepared O
by O
implantation B-SMT
of O
<nUm> O
× O
<nUm> O
Er O
/ O
cm2 O
at O
<nUm> O
keV O
into O
<nUm> O
nm O
thick O
amorphous B-DSC
Si B-MAT
surface B-DSC
layers I-DSC
prepared O
by O
Si B-MAT
implantation B-SMT
. O


the O
incorporation O
of O
Er B-MAT
in O
crystalline B-DSC
Si B-MAT
was O
investigated O
for O
Si(100) B-MAT
implanted B-SMT
with O
<nUm> O
keV O
Er O
at O
<nUm> O
× O
<nUm> O
cm-2 O
. O


the O
amorphized B-DSC
Si B-MAT
layers B-DSC
were O
crystallized O
by O
either O
thermal B-SMT
solid I-SMT
phase I-SMT
epitaxy I-SMT
( O
SPE B-SMT
) O
at O
<nUm> O
° O
C O
, O
or O
ion B-SMT
beam I-SMT
induced I-SMT
epitaxial I-SMT
crystallization I-SMT
( O
IBIEC B-SMT
) O
at O
<nUm> O
° O
C O
. O


segregation O
of O
Er B-MAT
is O
observed O
during O
SPE B-SMT
, O
with O
Er B-PRO
concentrations I-PRO
up O
to O
<nUm> O
cm-3 O
remaining O
trapped O
in O
the O
crystal B-DSC
( O
xmin B-PRO
≈ O
<nUm> O
% O
) O
after O
regrowth O
. O


under O
IBIEC B-SMT
, O
the O
original O
Er B-PRO
profile I-PRO
is O
completely O
trapped O
in O
the O
crystal B-DSC
( O
xmin B-PRO
≈ O
<nUm> O
% O
) O
. O


thermal B-SMT
annealing I-SMT
was O
used O
to O
optically O
activate O
the O
Er B-MAT
. O


after O
annealing B-SMT
at O
<nUm> O
° O
C O
, O
the O
Er B-MAT
- O
doped B-DSC
amorphous I-DSC
Si B-MAT
layers B-DSC
show O
a O
very O
small O
photoluminescence B-CMT
intensity O
( O
at O
<nUm> O
K O
) O
around O
<nUm> O
mm O
, O
superimposed O
on O
a O
defect O
band O
from O
the O
amorphous B-DSC
Si B-MAT
itself O
. O


for O
samples O
crystallized O
by O
SPE B-SMT
or O
IBIEC B-SMT
the O
maximum O
photoluminescence B-CMT
signal O
( O
at O
<nUm> O
K O
) O
is O
obtained O
after O
annealing B-SMT
at O
<nUm> O
° O
C O
. O


the O
intensities O
are O
much O
higher O
than O
for O
Er B-MAT
in O
amorphous B-DSC
Si B-MAT
. O


SPE B-SMT
regrown O
samples O
show O
sharp O
spectra O
peaked O
at O
<nUm> O
mm O
, O
while O
IBIEC B-SMT
samples O
exhibit O
a O
broad O
spectrum O
, O
≈ O
<nUm> O
mm O
wide O
, O
peaked O
at O
<nUm> O
mm O
. O


the O
similarities O
and O
differences O
in O
optical B-CMT
spectra I-CMT
for O
the O
different O
Er B-MAT
- O
doped B-DSC
materials O
are O
discussed O
. O


functionalization O
of O
OZn B-MAT
nanorods B-DSC
with O
g-Fe2O3 B-MAT
nanoparticles B-DSC
: O
layer B-SMT
- I-SMT
by I-SMT
- I-SMT
layer I-SMT
synthesis I-SMT
, O
optical B-PRO
and O
magnetic B-PRO
properties I-PRO


bifunctional O
magnetic B-PRO
– O
optical B-PRO
ZnO-g-Fe2O3 B-MAT
hybrid B-DSC
nanomaterials I-DSC
have O
been O
synthesized O
via O
a O
layer B-SMT
- I-SMT
by I-SMT
- I-SMT
layer I-SMT
assembly I-SMT
technique O
on O
OZn B-MAT
nanorod B-DSC
templates O
. O


x-ray B-CMT
diffraction I-CMT
, O
transmission B-CMT
electron I-CMT
microscope I-CMT
, O
field B-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscope I-CMT
, O
high B-CMT
- I-CMT
resolution I-CMT
transmission I-CMT
electron I-CMT
microscope I-CMT
and O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
have O
been O
used O
to O
characterize O
the O
as-synthesized B-DSC
products O
. O


the O
photoluminescence B-CMT
spectra O
indicate O
that O
ZnO-g-Fe2O3 B-MAT
hybrid B-DSC
nanomaterials I-DSC
exhibit O
enhanced O
UV B-PRO
emission I-PRO
and O
passivated B-PRO
defect I-PRO
emission I-PRO
. O


the O
magnetic B-PRO
property I-PRO
investigation O
reveals O
that O
ZnO-g-Fe2O3 B-MAT
hybrid B-DSC
nanomaterials I-DSC
exhibit O
a O
superparamagnetic B-PRO
behavior I-PRO
. O


influence O
of O
synthesis O
approach O
on O
structural B-PRO
and O
magnetic B-PRO
properties I-PRO
of O
lithium B-MAT
ferrite I-MAT
nanoparticles B-DSC


nanocrystalline B-DSC
Fe5LiO8 B-MAT
ferrite I-MAT
particles B-DSC
were O
synthesized O
with O
an O
average O
crystallite B-PRO
size I-PRO
of O
<nUm> O
nm O
and O
<nUm> O
nm O
by O
chemical B-SMT
coprecipitation I-SMT
and O
reverse B-SMT
microemulsion I-SMT
technique I-SMT
respectively O
. O


zero B-CMT
- I-CMT
field I-CMT
cooled I-CMT
( O
ZFC B-CMT
) O
and O
field B-CMT
cooled I-CMT
( I-CMT
FC I-CMT
) I-CMT
magnetization I-CMT
measurements I-CMT
at O
different O
magnetic O
fields O
and O
magnetic B-CMT
hysteresis I-CMT
loops I-CMT
at O
different O
temperatures O
have O
been O
measured O
. O


the O
non-saturation O
of O
m B-CMT
– I-CMT
H I-CMT
loops I-CMT
with O
a O
very O
low O
coercivity B-PRO
and O
remenance B-PRO
at O
room O
temperature O
confirms O
the O
presence O
of O
superparamagnetic B-PRO
( O
SPM B-PRO
) O
nature O
and O
single B-DSC
- I-DSC
domain I-DSC
ferrite B-MAT
particles B-DSC
. O


the O
blocking B-PRO
temperature I-PRO
( O
TB B-PRO
) O
has O
been O
found O
to O
shift O
towards O
the O
lower O
temperature O
region O
with O
the O
increase O
in O
applied O
magnetic O
field O
. O


it O
has O
been O
attributed O
to O
the O
reduction O
of O
magnetocrystalline B-PRO
anisotropy I-PRO
constant I-PRO
and O
blocking B-PRO
temperature I-PRO
dereases O
from O
145K O
to O
110K O
with O
increase O
in O
field O
from O
50Oe O
to O
1000Oe O
in O
the O
samples O
synthesized O
by O
microemulsion B-SMT
method I-SMT
. O


At O
high O
temperature O
, O
microemulsion B-SMT
synthesized O
nanoparticles B-DSC
show O
a O
maximum O
in O
magnetization B-PRO
versus O
temperature O
plot O
just O
below O
the O
curie B-PRO
temperature I-PRO
( O
TC B-PRO
) O
which O
has O
been O
attributed O
to O
the O
cumulative O
effect O
of O
the O
change O
in O
anisotropy B-PRO
with O
temperature O
and O
particle B-PRO
size I-PRO
growth O
during O
the O
measurement O
. O


non-sparking B-SMT
anodization I-SMT
process O
of O
AZ91D B-MAT
magnesium I-MAT
alloy B-DSC
under O
low O
AC O
voltage O


anodization B-SMT
is O
widely O
recognized O
as O
one O
of O
the O
most O
important O
surface B-SMT
treatments I-SMT
for O
magnesium B-MAT
alloys B-DSC
. O


however O
, O
since O
high B-SMT
voltage I-SMT
oxidation I-SMT
films B-DSC
are O
limited O
in O
some O
applications O
due O
to O
porosity B-PRO
and O
brittleness B-PRO
, O
it O
is O
worthwhile O
to O
explore O
the O
non-sparking B-SMT
oxidizing I-SMT
process O
. O


In O
this O
work O
, O
AZ91D B-MAT
was O
electrochemically B-SMT
anodized I-SMT
at O
different O
AC O
voltages O
in O
an O
electrolyte O
containing O
<nUm> O
g O
/ O
L O
HNaO O
and O
80g O
/ O
L O
Na2SiO3*9H2O O
. O


the O
effects O
of O
voltage O
on O
the O
surface B-PRO
morphology I-PRO
, O
composition B-PRO
and O
reaction O
process O
, O
especially O
the O
non-sparking B-SMT
discharge I-SMT
anodic I-SMT
film B-DSC
formation O
process O
, O
were O
investigated O
. O


the O
results O
showed O
that O
four O
different O
processes O
would O
appear O
according O
to O
the O
applied O
voltage O
variation O
from O
6V O
to O
40V O
, O
and O
that O
the O
non-sparking B-SMT
film B-DSC
formation O
process O
occurred O
in O
the O
range O
of O
<nUm> O
– O
10V O
. O


the O
film B-DSC
formed O
on O
the O
AZ91D B-MAT
surface B-DSC
under O
10V O
AC O
was O
mainly O
composed O
of O
Mg2O4Si B-MAT
with O
a O
lamellar B-DSC
structure B-PRO
. O


the O
horizontal O
and O
vertical O
expansion O
of O
the O
lamellar B-DSC
structure B-PRO
resulted O
in O
the O
formation O
of O
a O
multi-layered B-DSC
structure B-PRO
with O
a O
stable O
, O
linear O
growth O
rate O
for O
<nUm> O
min O
. O


the O
non-sparking B-SMT
film B-DSC
formation O
process O
can O
be O
considered O
to O
be O
the O
result O
of O
a O
balance O
of O
electrochemical B-SMT
dissolution I-SMT
and O
chemical B-SMT
deposition I-SMT
reaction I-SMT
. O


synthesis O
of O
diverse O
structured O
vanadium B-MAT
pentoxides I-MAT
particles B-DSC
by O
the O
simplified O
hydrothermal B-SMT
method I-SMT


In O
this O
letter O
, O
we O
utilize O
a O
simplified O
hydrothermal B-SMT
method I-SMT
without O
any O
addition O
of O
catalyst B-APL
to O
synthesize O
one O
- O
and O
three B-DSC
- I-DSC
dimensional I-DSC
structured I-DSC
pure I-DSC
vanadium B-MAT
pentoxide I-MAT
( O
O5V2 B-MAT
) O
particles B-DSC
, O
O5V2 B-MAT
nano-belt B-DSC
, O
micro-flower B-DSC
and O
micro-plane-flower B-DSC
. O


the O
synthesis O
is O
made O
possible O
by O
the O
formation O
of O
shcherbinaite B-SPL
phase O
and O
its O
cleavaging B-PRO
property I-PRO
along O
( O
<nUm> O
) O
facet O
by O
physical O
force O
. O


the O
O5V2 B-MAT
nano-belt B-DSC
has O
been O
derived O
from O
the O
O5V2 B-MAT
precursor O
in O
de-ionized O
( O
D.I. O
) O
water O
without O
catalysts B-APL
by O
using O
stirred B-SMT
autoclave I-SMT
system O
. O


and O
O5V2 B-MAT
micro-flower B-DSC
and O
micro-plane-flower B-DSC
have O
been O
synthesized O
in O
ethylene O
glycol O
solvent O
under O
controlled O
pH O
condition O
by O
HNO3 O
or O
H5NO O
. O


the O
synthesized O
nano-belts B-DSC
are O
less O
than O
<nUm> O
nm O
in O
width O
and O
less O
than O
<nUm> O
nm O
in O
thickness O
, O
respectively O
. O


the O
diameters O
of O
the O
synthesized O
micro-flower B-DSC
and O
micro-plane-flower B-DSC
are O
<nUm> O
– O
<nUm> O
mm O
. O


it O
is O
demonstrated O
that O
the O
prepared O
specimens O
are O
pure O
O5V2 B-MAT
composition B-PRO
with O
shcherbinaite B-SPL
phase O
. O


crystal B-PRO
structures I-PRO
of O
the O
fluorite B-MAT
- O
related O
phases O
CaHf4O9 B-MAT
and O
Ca6Hf19O44 B-MAT


crystal B-PRO
structures I-PRO
for O
the O
fluorite B-MAT
- O
related O
phases O
CaHf4O9 B-MAT
f1 B-SPL
) O
and O
Ca6Hf19O44 B-MAT
( O
f2 B-SPL
) O
have O
been O
determined O
from O
x-ray B-CMT
powder I-CMT
diffraction I-CMT
data O
. O


qf1 B-SPL
is O
monoclinic B-SPL
, O
C2 B-SPL
c I-SPL
, O
with O
a B-PRO
= O
<nUm> O
Å O
, O
b B-PRO
= O
<nUm> O
Å O
, O
c B-PRO
= O
<nUm> O
Å O
, O
β B-PRO
= O
<nUm> O
° O
and O
z B-PRO
= O
16. O
qf2 B-SPL
is O
rhombohedral B-SPL
, O
r3c B-SPL
, O
with O
a B-PRO
= O
<nUm> O
Å O
, O
α B-PRO
= O
<nUm> O
° O
and O
z B-PRO
= O
<nUm> O
. O


both O
phases O
are O
superstructures O
derived O
from O
the O
defect B-PRO
fluorite I-PRO
structure I-PRO
by O
ordering O
of O
the O
cations O
and O
of O
the O
anion B-PRO
vacancies I-PRO
. O


the O
ordering O
is O
such O
that O
the O
calcium B-MAT
ions O
are O
always O
8-coordinated O
by O
oxygen O
ions O
, O
while O
the O
hafnium B-MAT
ions O
may O
be O
6- O
, O
7- O
, O
or O
8-coordinated O
. O


the O
closest O
approach O
of O
anion B-PRO
vacancies I-PRO
is O
a O
<nUm> O
2<111>  O
fluorite O
subcell O
vector O
, O
and O
in O
each O
structure B-PRO
vacancies I-PRO
with O
this O
separation O
form O
strings O
. O


different O
calibration O
strategies O
for O
the O
analysis O
of O
pure B-DSC
copper B-MAT
metal O
by O
nanosecond B-CMT
laser I-CMT
ablation I-CMT
inductively I-CMT
coupled I-CMT
plasma I-CMT
mass I-CMT
spectrometry I-CMT


In O
this O
work O
, O
different O
calibration O
strategies O
for O
the O
determination O
of O
trace O
elements O
in O
pure O
copper B-MAT
metal B-PRO
by O
nanosecond B-CMT
laser I-CMT
ablation I-CMT
ICP-MS I-CMT
were O
investigated O
. O


In O
addition O
to O
certified B-APL
reference I-APL
materials I-APL
( O
CRMs B-APL
) O
, O
pellets B-DSC
of O
doped B-DSC
copper B-MAT
powder B-DSC
were O
used O
for O
calibration O
. O


the O
micro B-PRO
homogeneity I-PRO
of O
the O
CRMs B-APL
as O
well O
as O
the O
solution B-DSC
- I-DSC
doped I-DSC
pellets I-DSC
was O
sufficient O
to O
use O
them O
as O
calibration B-APL
samples I-APL
in O
combination O
with O
a O
laser O
spot O
size O
of O
<nUm> O
mm O
. O


In O
contrast O
, O
pellets B-DSC
doped I-DSC
with O
analytes O
in O
solid O
form O
showed O
a O
significant O
heterogeneity B-PRO
. O


for O
most O
of O
the O
investigated O
analytes O
and O
copper B-MAT
CRMs B-APL
the O
measured O
mass B-PRO
fractions I-PRO
were O
within O
± O
<nUm> O
% O
of O
their O
certified O
values O
when O
other O
copper B-MAT
CRMs B-APL
were O
used O
as O
calibration O
samples O
. O


when O
solution B-DSC
- I-DSC
doped I-DSC
powder I-DSC
pellets I-DSC
were O
used O
as O
calibration B-APL
samples I-APL
a O
systematic O
trend O
towards O
mass B-PRO
fractions I-PRO
below O
the O
certified O
values O
was O
observed O
for O
nearly O
all O
elements O
determined O
in O
the O
analysed O
CRMs B-APL
. O


thermal O
fractionation O
effects O
during O
the O
ablation B-SMT
of O
the O
solution B-DSC
- I-DSC
doped I-DSC
pellets I-DSC
were O
suspected O
as O
the O
extent O
of O
the O
fractionation O
depends O
on O
the O
irradiance O
, O
whereas O
fractionation O
is O
reduced O
at O
higher O
irradiance O
. O


growth O
of O
Ga B-MAT
whiskers B-DSC
from O
GaN B-MAT
/ O
Ga B-MAT
double B-DSC
layered I-DSC
films I-DSC


spontaneous O
growth O
of O
Ga B-MAT
whiskers B-DSC
from O
GaN B-MAT
/ O
Ga B-MAT
double B-DSC
layered I-DSC
films I-DSC
deposited O
by O
an O
rf B-SMT
sputtering I-SMT
technique O
has O
been O
found O
, O
and O
the O
whiskers B-DSC
have O
been O
examined O
by O
x-ray B-CMT
diffraction I-CMT
. O


the O
whiskers B-DSC
have O
been O
regarded O
as O
squeezed O
ones O
. O


the O
highest O
whisker B-DSC
growth O
rate O
observed O
is O
∼ O
<nUm> O
mm O
/ O
s O
and O
the O
maximum O
whisker B-DSC
length O
observed O
is O
∼ O
<nUm> O
mm O
. O


the O
whiskers B-DSC
obtained O
vary O
in O
size O
and O
shape O
, O
and O
have O
striations O
nearly O
parallel O
to O
their O
growth O
directions O
on O
their O
surfaces B-DSC
and O
have O
irregular O
cross-sections O
. O


their O
preferred O
growth O
direction O
has O
been O
observed O
to O
be O
[110] O
direction O
. O


lattice B-PRO
twists I-PRO
caused O
by O
screw B-PRO
dislocations I-PRO
along O
the O
whisker B-DSC
axes O
have O
been O
detected O
from O
some O
whiskers B-DSC
. O


the O
whisker B-DSC
growth O
observed O
is O
attributed O
to O
the O
relaxation O
of O
a O
large O
stress B-PRO
in O
the O
Ga B-MAT
film B-DSC
under O
GaN B-MAT
film B-DSC
. O


antisite B-PRO
- I-PRO
disorder I-PRO
, O
magnetic B-PRO
and O
thermoelectric B-PRO
properties I-PRO
of O
Mo B-MAT
- O
rich O
Sr2Fe1-yMo1+yO6 B-MAT
( I-MAT
<nUm> I-MAT
≤ I-MAT
y I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT
double B-SPL
perovskites I-SPL


structure B-CMT
analysis I-CMT
using O
x-ray B-CMT
and O
neutron B-CMT
powder I-CMT
diffraction I-CMT
and O
elemental B-CMT
mapping I-CMT
has O
been O
used O
to O
demonstrate O
that O
nominal O
a-site B-PRO
deficient I-PRO
Sr2-xFeMoO6-d B-MAT
( I-MAT
<nUm> I-MAT
≤ I-MAT
x I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT
compositions B-PRO
form O
as O
Mo B-MAT
- O
rich O
Sr2Fe1-yMo1+yO6 B-MAT
( I-MAT
<nUm> I-MAT
≤ I-MAT
y I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT
perovskites B-SPL
at O
high O
temperatures O
and O
under O
reducing O
atmospheres O
. O


these O
materials O
show O
a O
gradual O
transition O
from O
the O
Fe B-MAT
and O
Mo B-MAT
rock B-SPL
salt I-SPL
ordered O
double B-SPL
perovskite I-SPL
structure O
to O
a O
b-site O
disordered O
arrangement O
. O


analysis O
of O
the O
fractions O
of O
B O
– O
O O
– O
B O
’ O
linkages O
revealed O
a O
gradual O
increase O
in O
the O
number O
of O
Mo B-MAT
– O
O O
– O
Mo B-MAT
linkages O
at O
the O
expense O
of O
the O
ferrimagnetic B-PRO
( O
FIM B-PRO
) O
Fe B-MAT
– O
O O
– O
Mo B-MAT
linkages O
that O
dominate O
the O
y O
= O
<nUm> O
material O
. O


all O
samples O
contain O
about O
<nUm> O
– O
<nUm> O
% O
antiferromagnetic B-PRO
( O
AF B-PRO
) O
Fe B-MAT
– O
O O
– O
Fe B-MAT
linkages O
, O
independent O
of O
the O
degree O
of O
b-site B-PRO
ordering I-PRO
. O


the O
magnetic B-PRO
susceptibility I-PRO
of O
the O
y O
= O
<nUm> O
sample O
is O
characteristic O
of O
a O
small B-PRO
domain I-PRO
ferrimagnet I-PRO
( O
Tc B-PRO
∼ O
<nUm> O
K O
) O
, O
while O
room O
temperature O
neutron B-CMT
powder I-CMT
diffraction I-CMT
demonstrated O
the O
presence O
of O
g B-PRO
- I-PRO
type I-PRO
AF I-PRO
ordering O
linked O
to O
the O
Fe B-MAT
– O
O O
– O
Fe B-MAT
linkages O
( O
mFe B-PRO
= O
<nUm> O
mB O
) O
. O


the O
high O
temperature O
thermoelectric B-PRO
properties I-PRO
are O
characteristic O
of O
a O
metal O
with O
a O
linear O
temperature O
dependence O
of O
the O
seebeck B-PRO
coefficient I-PRO
, O
S B-PRO
( O
for O
all O
y O
) O
and O
electrical B-PRO
resistivity I-PRO
ρ I-PRO
( O
y O
≥ O
<nUm> O
) O
. O


the O
largest O
thermoelectric B-PRO
power I-PRO
factor I-PRO
S2 I-PRO
/ I-PRO
ρ I-PRO
= O
<nUm> O
mW O
m-1 O
K-1 O
is O
observed O
for O
FeMoO6Sr2 B-MAT
at O
<nUm> O
K O
. O


enhanced O
electrochemical B-PRO
performance I-PRO
of O
O2Ti B-MAT
nanotube B-DSC
array I-DSC
electrodes B-APL
by O
controlling O
the O
introduction O
of O
substoichiometric B-DSC
titanium B-MAT
oxides I-MAT


although O
anodized B-SMT
titania B-MAT
nanotubes B-DSC
( O
TNTs B-MAT
) O
possess O
unique O
advantages O
as O
an O
electrode B-APL
material O
, O
the O
poor O
electrical B-PRO
conductivity I-PRO
limits O
their O
practical O
application O
. O


we O
herein O
report O
a O
facile O
route O
to O
enhance O
electrical B-PRO
conductivity I-PRO
and O
improve O
electrochemical B-PRO
behavior I-PRO
by O
controlling O
the O
introduction O
of O
substoichiometric B-DSC
titanium B-MAT
oxides I-MAT
( O
TinO2n-1 B-MAT
) O
, O
which O
can O
facilitate O
charge O
propagation O
in O
TNTs B-MAT
and O
improve O
kinetics O
of O
ions O
and O
electron B-PRO
transport I-PRO
in O
the O
electrode B-APL
. O


specific B-PRO
capacitance I-PRO
is O
as O
high O
as O
<nUm> O
mF O
cm-2 O
, O
which O
is O
about O
<nUm> O
times O
higher O
than O
that O
of O
the O
untreated O
samples O
( O
<nUm> O
mF O
cm-2 O
) O
. O


galvanostatic B-CMT
charge I-CMT
- I-CMT
discharge I-CMT
results O
show O
TNT B-MAT
arrays B-DSC
- O
based O
electrode B-APL
stable O
capacitance B-PRO
behavior I-PRO
with O
excellent O
capacitance B-PRO
retention I-PRO
even O
after O
<nUm> O
continuous O
charge O
- O
discharge O
cycles O
at O
a O
current O
density O
of O
<nUm> O
mA O
cm-2 O
in O
Li2O4S B-MAT
electrolyte B-DSC
. O


the O
ease O
of O
synthesis O
and O
the O
superior O
electrochemical B-PRO
performance I-PRO
suggest O
a O
promising O
application O
for O
the O
TNT B-MAT
arrays B-DSC
- O
based O
material O
in O
energy B-APL
storage I-APL
field I-APL
. O


the O
impact O
of O
structural O
changes O
in O
ZrO2-Y2O3 B-MAT
solid B-DSC
solution I-DSC
crystals I-DSC
grown O
by O
directional B-SMT
crystallization I-SMT
of O
the O
melt O
on O
their O
transport B-PRO
characteristics I-PRO


this O
work O
shows O
the O
correlation O
between O
the O
crystal B-PRO
structure I-PRO
, O
phase B-PRO
composition I-PRO
and O
transport B-PRO
characteristics I-PRO
of O
O2Zr B-MAT
based O
solid B-APL
electrolytes I-APL
depending O
on O
the O
concentration O
of O
the O
stabilizing O
impurity O
O3Y2 B-MAT
. O


the O
crystals B-DSC
O2Zr B-MAT
stabilized O
with O
yttrium B-MAT
oxide I-MAT
in O
a O
wide O
range O
of O
compositions B-PRO
( O
from O
<nUm> O
to O
<nUm> O
mol O
% O
O3Y2 B-MAT
) O
were O
studied O
. O


the O
phase B-PRO
composition I-PRO
, O
twin B-PRO
structure I-PRO
, O
and O
conductivity B-PRO
of O
the O
crystals B-DSC
we O
determined O
for O
all O
concentrations O
by O
x-ray B-CMT
diffraction I-CMT
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
, O
raman B-CMT
and O
impedance B-CMT
spectroscopy I-CMT
. O


the O
ionic B-PRO
conductivity I-PRO
of O
the O
crystals B-DSC
was O
changed O
nonmonotonic O
, O
with O
increasing O
O3Y2 B-MAT
concentration O
. O


the O
existence O
of O
two O
maxima O
of O
ionic B-PRO
conductivity I-PRO
at O
temperatures O
<nUm> O
– O
<nUm> O
° O
C O
for O
compositions B-PRO
ZrO2-3.2mol B-MAT
% I-MAT
O3Y2 I-MAT
and O
ZrO2-8mol B-MAT
% I-MAT
O3Y2 I-MAT
was O
established O
. O


we O
show O
that O
twin B-PRO
boundaries I-PRO
do O
not O
trigger O
any O
additional O
ionic B-PRO
conductivity I-PRO
acceleration I-PRO
mechanism I-PRO
in O
ZrO2-Y2O3 B-MAT
crystals B-DSC
. O


the O
highest O
conductivity B-PRO
is O
observed O
in O
ZrO2-(8 B-MAT
– I-MAT
10)mol I-MAT
% I-MAT
O3Y2 I-MAT
crystals B-DSC
containing O
the O
t'' B-SPL
phase O
in O
which O
the O
oxygen O
atoms O
are O
shifted O
from O
the O
high O
symmetry O
positions O
that O
are O
typical O
for O
the O
cubic B-SPL
phase O
. O


aminoclay B-MAT
: O
a O
permselective O
matrix O
to O
stabilize O
copper B-MAT
nanoparticles B-DSC


air O
sensitive O
copper B-MAT
nanoparticles B-DSC
have O
been O
stabilized O
using O
a O
water B-PRO
soluble I-PRO
aminoclay B-MAT
matrix B-DSC
. O


the O
aminoclay B-MAT
shows O
remarkable O
permselective B-PRO
behaviour I-PRO
allowing O
only O
the O
ionic O
species O
to O
diffuse O
through O
it O
and O
react O
with O
copper B-MAT
nanoparticles B-DSC
. O


it O
blocks O
the O
neutral O
molecule O
oxygen O
, O
thereby O
stabilizing O
the O
copper B-MAT
nanoparticles B-DSC
against O
oxidation B-SMT
for O
a O
longer O
period O
. O


tensile B-PRO
properties I-PRO
and O
damage B-PRO
behaviors I-PRO
of O
csf B-MAT
/ O
Mg B-MAT
composite B-DSC
at O
elevated O
temperature O
and O
containing O
a O
small O
fraction O
of O
liquid O


the O
mechanical B-PRO
properties I-PRO
of O
magnesium B-MAT
matrix B-DSC
composites I-DSC
reinforced O
by O
pyrolytic B-DSC
carbon B-MAT
coated B-SMT
short O
carbon B-MAT
fiber B-DSC
at O
temperatures O
close O
to O
and O
above O
the O
solidus B-PRO
temperature I-PRO
were O
investigated O
by O
tensile B-CMT
tests I-CMT
for O
the O
first O
time O
. O


microstructural B-CMT
observations I-CMT
and O
fractographic B-CMT
analysis I-CMT
were O
carried O
out O
in O
order O
to O
reveal O
the O
damage B-PRO
mechanisms I-PRO
of O
the O
composites B-DSC
with O
different O
fraction O
of O
liquid O
. O


tensile B-PRO
strength I-PRO
of O
the O
composites B-DSC
decreased O
monotonously O
with O
temperature O
, O
an O
exponential O
equation O
relating O
the O
tensile B-PRO
strength I-PRO
to O
temperature O
and O
liquid O
fraction O
was O
derived O
. O


the O
elongation O
increases O
monotonously O
with O
temperatures O
from O
<nUm> O
° O
C O
to O
<nUm> O
° O
C O
( O
solidus B-PRO
temperature I-PRO
) O
, O
and O
then O
decreases O
gradually O
with O
increasing O
fraction O
of O
liquid O
except O
a O
trough O
at O
<nUm> O
° O
C O
. O


the O
composites B-DSC
almost O
have O
no O
ductility B-PRO
and O
can O
not O
sustain O
tensile B-PRO
stress I-PRO
when O
the O
fraction O
of O
liquid O
reaches O
<nUm> O
% O
. O


the O
amount O
and O
distribution O
of O
liquid O
phase O
in O
the O
composites B-DSC
directly O
determines O
their O
mechanical B-PRO
properties I-PRO
and O
damage B-PRO
behavior I-PRO
. O


hematite B-MAT
nanodiscs B-DSC
exposing O
( O
<nUm> O
) O
facets O
: O
synthesis O
, O
formation B-PRO
mechanism I-PRO
and O
application O
for O
Li B-APL
- I-APL
ion I-APL
batteries I-APL


<nUm> O
nm O
thick O
hematite B-MAT
nanodiscs B-DSC
have O
been O
prepared O
by O
a O
facile B-SMT
solvothermal I-SMT
method I-SMT
. O


the O
growth O
of O
Fe2O3 B-MAT
nanodiscs B-DSC
follows O
the O
precipitation O
– O
dissolution O
– O
growth O
mechanism O
, O
and O
the O
( O
<nUm> O
) O
facets O
are O
preferentially O
exposed O
since O
( O
<nUm> O
) O
facets O
are O
the O
densest O
and O
therefore O
most O
stable O
facets O
. O


In O
particular O
, O
outstanding O
rate B-PRO
and O
cycling B-PRO
capabilities I-PRO
have O
been O
demonstrated O
for O
the O
nanodiscs B-DSC
due O
to O
the O
reduced O
li+ B-PRO
diffusion I-PRO
distance I-PRO
and O
enhanced O
reactivity B-PRO
of O
the O
nanosized B-DSC
structures O
. O


fabrication O
of O
thick B-DSC
layered I-DSC
superconductive B-PRO
ceramic B-DSC
( O
BiPbSrCaCuO B-MAT
) O
/ O
metal O
composite B-DSC
strips I-DSC
by O
explosive B-SMT
cladding I-SMT
and O
rolling B-SMT


explosive B-SMT
cladding I-SMT
, O
subsequent O
rolling B-SMT
and O
heat B-SMT
treatment I-SMT
are O
employed O
to O
fabricate O
a O
composite B-DSC
( O
sandwich B-DSC
) O
strip O
consisting O
of O
an O
intermediate O
high O
temperature O
superconducting B-PRO
ceramic B-DSC
layer I-DSC
of O
the O
BiPbSrCaCuO B-MAT
compound O
and O
two O
metal O
silver B-MAT
plates B-DSC
. O


macro- O
and O
micro- B-PRO
structural I-PRO
experimental O
observations O
regarding O
the O
quality O
of O
the O
product O
at O
the O
various O
stages O
of O
the O
fabrication O
were O
evaluated O
using O
optical B-CMT
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
and O
x-ray B-CMT
diffraction I-CMT
techniques O
, O
whilst O
the O
superconducting B-PRO
properties I-PRO
of O
the O
composite B-DSC
strips I-DSC
were O
obtained O
using O
ac B-CMT
- I-CMT
magnetic I-CMT
susceptibility I-CMT
techniques O
; O
preliminary O
dc B-CMT
- I-CMT
resistivity I-CMT
measurements I-CMT
were O
made O
also O
to O
evaluate O
further O
the O
superconductive B-PRO
properties I-PRO
of O
the O
material O
. O


post-fabrication O
heat B-SMT
- I-SMT
treatment I-SMT
in O
air O
resulted O
in O
improved O
superconductivity B-PRO
of O
the O
heat B-SMT
- I-SMT
treated I-SMT
strips B-DSC
as O
compared O
to O
the O
residual O
superconductivity B-PRO
obtained O
after O
rolling B-SMT
, O
leading O
therefore O
to O
useful O
conculsions O
regarding O
the O
applicability O
of O
the O
fabricated O
composite B-DSC
plates I-DSC
in O
the O
electrical B-APL
and O
electronic B-APL
industries I-APL
. O


anomalous O
conductivity B-PRO
- I-PRO
type I-PRO
transition I-PRO
sensing I-PRO
behaviors I-PRO
of O
n B-PRO
- I-PRO
type I-PRO
porous B-DSC
a-Fe2O3 B-MAT
nanostructures B-DSC
toward O
H2S B-MAT


porous B-DSC
urchin I-DSC
- I-DSC
like I-DSC
a-Fe2O3 B-MAT
nanostructures B-DSC
with O
n B-PRO
- I-PRO
type I-PRO
semiconducting I-PRO
properties I-PRO
were O
used O
as O
gas B-APL
sensing I-APL
materials O
. O


interestingly O
, O
it O
was O
observed O
abnormal O
n B-PRO
– I-PRO
p I-PRO
transition I-PRO
sensing I-PRO
behavior I-PRO
induced O
by O
the O
variation O
of O
working O
temperature O
and O
p B-PRO
– I-PRO
n I-PRO
transition I-PRO
sensing I-PRO
behavior I-PRO
related O
to O
the O
increase O
of O
H2S O
concentration O
. O


large O
density O
of O
unstable O
surface B-PRO
states I-PRO
resulting O
from O
high O
surface B-PRO
- I-PRO
to I-PRO
- I-PRO
volume I-PRO
ratio I-PRO
would O
be O
beneficial O
for O
the O
formation O
of O
a O
surface B-DSC
inversion B-PRO
layer I-PRO
and O
account O
for O
the O
n B-PRO
– I-PRO
p I-PRO
transition I-PRO
. O


furthermore O
, O
the O
as-prepared B-DSC
sensor B-APL
showed O
good O
H2S B-PRO
sensing I-PRO
performances I-PRO
with O
short O
response B-PRO
/ O
recovery B-PRO
time I-PRO
within O
<nUm> O
/ O
<nUm> O
s O
, O
and O
relatively O
low O
detection B-PRO
limit I-PRO
of O
<nUm> O
ppm O
. O


these O
results O
help O
us O
to O
understand O
the O
sensing B-PRO
mechanism I-PRO
of O
a-Fe2O3 B-MAT
and O
hint O
the O
potential O
application O
of O
the O
as-prepared B-DSC
sensor B-APL
in O
monitoring B-APL
H2S I-APL
. O


fabrication O
of O
buffer B-DSC
layer I-DSC
for O
YBCO B-MAT
coated B-SMT
conductor B-PRO
on O
cube B-DSC
textured I-DSC
Ag B-MAT
substrate B-DSC


In O
case O
of O
the O
cube B-DSC
textured I-DSC
( O
CUTE B-DSC
) O
Ag B-MAT
substrate B-DSC
, O
recrystallization O
process O
of O
as-rolled B-SMT
Ag B-MAT
substrate B-DSC
in O
various O
atmosphere O
changed O
surface B-PRO
flatness I-PRO
of O
the O
substrate B-DSC
. O


when O
the O
substrate B-DSC
was O
heated B-SMT
in O
a O
vacuum O
chamber O
with O
a O
oxygen O
partial O
pressure O
of O
less O
than O
<nUm> O
× O
<nUm> O
− O
<nUm> O
Torr O
at O
<nUm> O
° O
C O
, O
the O
surface B-PRO
average I-PRO
roughness I-PRO
( O
Ra B-PRO
) O
of O
the O
substrate B-DSC
was O
less O
than O
<nUm> O
nm O
. O


then O
the O
oxygen O
was O
introduced O
into O
the O
vacuum O
chamber O
to O
fabricate O
CeO2 B-MAT
buffer B-DSC
layer I-DSC
on O
the O
substrate B-DSC
by O
pulsed B-SMT
laser I-SMT
deposition I-SMT
. O


after O
the O
oxygen O
pressure O
reached O
to O
<nUm> O
– O
<nUm> O
mTorr O
, O
CeO2 B-MAT
layer B-DSC
was O
deposited O
on O
the O
CUTE B-DSC
Ag B-MAT
substrate B-DSC
immediately O
. O


by O
reducing O
the O
influence O
of O
oxygen O
to O
surface B-PRO
roughness I-PRO
of O
the O
substrate B-DSC
, O
Ra B-PRO
of O
the O
CeO2 B-MAT
buffered B-DSC
CUTE I-DSC
Ag B-MAT
substrate B-DSC
was O
<nUm> O
nm O
. O


kinetics O
of O
chemical B-SMT
decomposition I-SMT
of O
the O
solid B-APL
electrolyte I-APL
Cl3Cu4I2Rb B-MAT
by O
iodine O


In O
the O
solid B-APL
electrolyte I-APL
cell I-APL
, O
copper B-MAT
– O
Cl3Cu4I2Rb B-MAT
– O
I2 B-MAT
, O
glassy B-DSC
carbon B-MAT
, O
the O
EMF B-PRO
values I-PRO
at O
open O
circuit O
were O
measured O
as O
a O
function O
of O
time O
. O


iodine O
was O
generated O
through O
anodic B-SMT
electrochemical I-SMT
decomposition I-SMT
of O
the O
electrolyte B-APL
Cl3Cu4I2Rb B-MAT
and O
this O
iodine O
then O
further O
reacted O
with O
the O
fresh O
electrolyte B-APL
. O


an O
equation O
was O
deduced O
which O
relates O
the O
EMF B-PRO
values O
to O
the O
iodine B-PRO
concentration I-PRO
at O
the O
glassy B-DSC
carbon B-MAT
surface B-DSC
. O


it O
was O
shown O
that O
slow O
diffusion O
of O
the O
iodine O
in O
the O
reaction O
product O
layer B-DSC
is O
a O
limiting O
step O
in O
the O
chemical B-PRO
interaction I-PRO
of O
iodine O
with O
Cl3Cu4I2Rb B-MAT
. O


for O
the O
compressed O
Cl3Cu4I2Rb B-MAT
sample O
investigated O
, O
the O
iodine B-PRO
diffusion I-PRO
coefficient I-PRO
was O
calculated O
to O
be O
<nUm> O
× O
<nUm> O
− O
<nUm> O
cm2 O
/ O
s O
. O


iodine B-PRO
loss I-PRO
from O
the O
glassy B-DSC
carbon B-MAT
surface B-DSC
was O
about O
<nUm> O
× O
<nUm> O
− O
<nUm> O
g O
/ O
cm2 O
s O
. O


the O
thickness O
of O
the O
Cl3Cu4I2Rb B-MAT
sample O
was O
equal O
to O
<nUm> O
mm O
. O


effect O
of O
crystallographic B-PRO
orientation I-PRO
on O
mechanical B-PRO
anisotropy I-PRO
of O
selective B-SMT
laser I-SMT
melted I-SMT
Ti-6Al-4V B-MAT
alloy B-DSC


the O
crystallographic B-PRO
texture I-PRO
of O
Ti-6Al-4V B-MAT
produced O
by O
selective B-SMT
laser I-SMT
melting I-SMT
( O
SLM B-SMT
) O
under O
various O
laser O
energy O
densities O
was O
characterized O
by O
electron B-CMT
backscatter I-CMT
diffraction I-CMT
technique O
to O
explore O
its O
effect O
on O
the O
anisotropy B-PRO
in O
tensile B-PRO
properties I-PRO
. O


results O
show O
that O
crystallographic B-PRO
orientation I-PRO
depending O
on O
laser O
energy O
density O
acts O
a O
significant O
role O
in O
determining O
the O
mechanical B-PRO
anisotropy I-PRO
of O
SLMed B-SMT
Ti-6Al-4V B-MAT
samples O
. O


the O
microstructure B-PRO
of O
the O
SLMed B-SMT
Ti-6Al-4V B-MAT
samples O
consists O
of O
fully O
martensites B-SPL
. O


As O
for O
the O
martensites B-SPL
, O
the O
fraction O
of O
basal O
orientations O
decreases O
, O
while O
the O
content O
of O
prismatic O
orientations O
increases O
with O
laser O
energy O
density O
increasing O
from O
<nUm> O
to O
269J O
/ O
mm3 O
. O


and O
the O
order O
of O
the O
dominated O
crystallographic B-PRO
orientation I-PRO
of O
martensites B-SPL
with O
the O
laser O
energy O
density O
is O
( O
<nUm> O
<nUm> O
-0)[2 O
<nUm> O
− O
<nUm> O
-3]-(11 O
<nUm> O
-4)[ O
<nUm> O
− O
<nUm> O
-41]-(11 O
<nUm> O
-0)[1 O
<nUm> O
-01]-(11 O
<nUm> O
-0)[2 O
<nUm> O
− O
<nUm> O
] O
. O


there O
is O
anisotropy B-PRO
in O
tensile B-PRO
properties I-PRO
between O
horizontally O
and O
vertically O
built O
samples O
, O
which O
is O
more O
obvious O
with O
laser O
energy O
density O
. O


the O
formation O
of O
such O
anisotropy B-PRO
is O
ascribed O
to O
the O
higher O
schmid B-PRO
factor I-PRO
values O
of O
the O
grains O
in O
the O
vertically O
built O
tensile O
samples O
than O
those O
in O
horizontally O
built O
ones O
. O


hydrothermal B-SMT
synthesis I-SMT
of O
nanosized B-DSC
BaO3Ti B-MAT
powders B-DSC
and O
dielectric B-PRO
properties I-PRO
of O
corresponding O
ceramics B-DSC


BaO3Ti B-MAT
fine B-DSC
powders I-DSC
were O
synthesized O
by O
hydrothermal B-SMT
method I-SMT
at O
<nUm> O
° O
C O
or O
<nUm> O
° O
C O
for O
<nUm> O
h O
, O
starting O
from O
a O
mixture O
of O
TiCl3+BaCl2 B-MAT
or O
TiO2+BaCl2 B-MAT
. O


the O
size O
of O
the O
crystallites B-DSC
is O
close O
to O
<nUm> O
nm O
whatever O
the O
starting O
mixture O
and O
the O
reaction O
temperature O
. O


these O
powders B-DSC
are O
well O
crystallized B-PRO
and O
constituted O
of O
a O
mixture O
of O
the O
metastable B-PRO
cubic B-SPL
and O
stable B-PRO
tetragonal B-SPL
phases O
. O


the O
ceramics B-DSC
obtained O
after O
uniaxial B-SMT
pressing I-SMT
and O
sintering B-SMT
at O
<nUm> O
° O
C O
for O
<nUm> O
h O
or O
<nUm> O
h O
present O
high O
densification B-PRO
( O
up O
to O
<nUm> O
% O
) O
. O


the O
curie B-PRO
temperature I-PRO
( O
Tc B-PRO
) O
and O
the O
electrical B-PRO
permittivity I-PRO
( O
er B-PRO
) O
of O
the O
ceramics B-DSC
strongly O
depend O
on O
the O
type O
of O
titanium B-MAT
source O
that O
has O
been O
used O
for O
preparing O
the O
powder B-DSC
and O
on O
the O
sintering B-SMT
dwell O
time O
. O


particularly O
, O
Tc B-PRO
is O
shifted O
towards O
lower O
temperature O
when O
Cl3Ti B-MAT
is O
used O
. O


the O
permittivity B-PRO
value O
at O
Tc B-PRO
of O
BaO3Ti B-MAT
sintered B-SMT
at O
<nUm> O
° O
C O
for O
<nUm> O
h O
reaches O
<nUm> O
and O
<nUm> O
with O
respectively O
Cl3Ti B-MAT
and O
O2Ti B-MAT
used O
as O
titanium B-MAT
source O
. O


fabrication O
of O
micro-patterned B-SMT
O2Ti B-MAT
thin B-DSC
films I-DSC
incorporating O
Ag B-MAT
nanoparticles B-DSC


A O
photosensitive B-PRO
O2Ti B-MAT
thin B-DSC
film I-DSC
embedded O
with O
Ag B-MAT
nanoparticles B-DSC
has O
been O
prepared O
from O
a O
Ti(OBu)4 B-MAT
– O
acetylacetone O
solution O
, O
containing O
dispersed O
Ag B-MAT
nanoparticles B-DSC
, O
by O
the O
sol B-SMT
– I-SMT
gel I-SMT
method O
. O


UV B-CMT
– I-CMT
visible I-CMT
absorption I-CMT
spectra O
showed O
that O
the O
thin B-DSC
film I-DSC
obtained O
has O
two O
absorption B-PRO
bands I-PRO
, O
characteristic O
of O
the O
acetylacetone O
chelate O
rings O
and O
plasmon B-PRO
resonance I-PRO
from O
Ag B-MAT
nanoparticles B-DSC
. O


after O
the O
irradiation B-SMT
of I-SMT
UV I-SMT
light I-SMT
, O
the O
absorption B-PRO
band I-PRO
from O
the O
chelate O
rings O
almost O
disappeared O
, O
ascribed O
to O
structural O
changes O
associated O
with O
dissociation O
of O
the O
chelate O
rings O
. O


the O
thin B-DSC
film I-DSC
after O
the O
UV B-SMT
irradiation I-SMT
exhibited O
a O
broad O
absorption B-PRO
band I-PRO
in O
the O
IR B-CMT
spectrum O
, O
indicating O
that O
a O
Ti B-MAT
– O
O O
– O
Ti B-MAT
network O
was O
formed O
in O
the O
thin B-DSC
film I-DSC
. O


HRTEM B-CMT
and O
EDX B-CMT
spectra O
revealed O
that O
Ag B-MAT
nanoparticles B-DSC
were O
present O
and O
dispersed O
in O
the O
O2Ti B-MAT
thin B-DSC
film I-DSC
. O


micro-patterns B-SMT
of O
<nUm> O
mm O
dots O
have O
been O
fabricated O
by O
UV B-SMT
irradiation I-SMT
through O
a O
corresponding O
photomask B-SMT
, O
followed O
by O
leaching B-SMT
. O


facile B-SMT
synthesis I-SMT
of O
prickly B-DSC
CoNi B-MAT
microwires B-DSC


novel O
prickly B-DSC
CoNi B-MAT
microwires B-DSC
have O
been O
successfully O
synthesized O
via O
a O
hydrothermal B-SMT
synthetic I-SMT
route I-SMT
. O


the O
samples O
prepared O
at O
<nUm> O
° O
C O
for O
6h O
were O
made O
up O
of O
large O
– O
scale O
wire B-DSC
- I-DSC
like I-DSC
assemblies O
with O
the O
diameter O
of O
about O
<nUm> O
mm O
and O
length O
up O
to O
several O
dozens O
microns O
. O


these O
wires B-DSC
exhibited O
hierarchical B-PRO
structure I-PRO
, O
which O
was O
constructed O
by O
thornlike B-DSC
crystals I-DSC
with O
the O
length O
of O
300-500 O
nm O
. O


the O
morphology B-PRO
of O
the O
wires B-DSC
could O
be O
adjusted O
by O
the O
HNaO O
contents O
in O
the O
system O
. O


the O
magnetic B-CMT
hysteresis I-CMT
measurement I-CMT
revealed O
that O
the O
CoNi B-MAT
microwires B-DSC
displayed O
ferromagnetic B-PRO
behaviors I-PRO
with O
a O
saturation B-PRO
magnetization I-PRO
( O
ms B-PRO
) O
of O
<nUm> O
emu O
/ O
g O
and O
a O
coercivity B-PRO
( O
hc B-PRO
) O
of O
<nUm> O
Oe O
. O


A O
two B-DSC
- I-DSC
dimensional I-DSC
four-fold O
symmetric O
MoO4Sr B-MAT
dendrite B-DSC


A O
variety O
of O
MoO4Sr B-MAT
morphologies B-PRO
were O
prepared O
by O
performing O
a O
solvothermal B-SMT
reaction I-SMT
in O
water O
– O
hexane O
bilayer O
solutions O
. O


the O
morphology B-PRO
of O
MoO4Sr B-MAT
crystals B-DSC
evolved O
from O
tetragonal B-SPL
bipyramidal I-SPL
to O
two B-DSC
- I-DSC
dimensional I-DSC
( O
2-D B-DSC
) O
four-fold O
symmetric O
dendrites B-DSC
as O
the O
reaction O
temperature O
and O
the O
MoO42- B-MAT
ion O
to O
sr2+ O
ion O
reaction O
concentration O
ratio O
were O
increased O
. O


As O
the O
reaction O
temperature O
increased O
, O
the O
intensity O
ratio O
of O
the O
( O
<nUm> O
) O
to O
( O
<nUm> O
) O
XRD B-CMT
peaks O
increased O
dramatically O
, O
confirming O
that O
the O
morphology B-PRO
changed O
from O
a O
tetragonal B-SPL
bipyramid I-SPL
to O
a O
2-D B-DSC
four-fold O
symmetric O
dendrite B-DSC
. O


each O
of O
the O
2-D B-DSC
four-fold O
symmetric O
MoO4Sr B-MAT
dendrites B-DSC
featured O
four O
long O
trunks O
along O
the O
< O
<nUm> O
> O
directions O
and O
a O
series O
of O
two O
branches O
perpendicular O
to O
the O
trunk O
. O


A O
possible O
crystal O
growth O
mechanism O
for O
the O
2-D B-DSC
four-fold O
symmetric O
dendrites B-DSC
was O
proposed O
based O
on O
the O
crystallographic O
evidence O
. O


phase B-CMT
field I-CMT
simulations I-CMT
of O
ferroelectrics B-PRO
domain I-PRO
structures I-PRO
in O
PbZr B-MAT
x I-MAT
ti1- I-MAT
x I-MAT
O3 I-MAT
bilayers B-DSC


domain B-PRO
stability I-PRO
and O
structures B-PRO
in O
O30Pb10Ti7Zr3 B-MAT
/ O
O30Pb10Ti3Zr7 B-MAT
bilayer B-DSC
films I-DSC
under O
different O
substrate B-DSC
strains O
are O
studied O
using O
the O
phase B-CMT
field I-CMT
method I-CMT
. O


it O
is O
demonstrated O
that O
the O
domain B-PRO
structure I-PRO
of O
the O
bilayer B-DSC
film I-DSC
is O
very O
different O
from O
those O
of O
the O
corresponding O
single B-DSC
layer I-DSC
films I-DSC
grown O
on O
the O
same O
silicon B-MAT
substrate B-DSC
with O
an O
incoherent O
interface B-DSC
. O


moreover O
, O
the O
predicted O
rhombohedral B-SPL
domains B-PRO
in O
the O
O30Pb10Ti3Zr7 B-MAT
layer B-DSC
of O
the O
bilayer B-DSC
film I-DSC
have O
smaller O
sizes O
than O
those O
in O
the O
single B-DSC
layer I-DSC
case O
. O


these O
results O
are O
compared O
with O
experimental O
observations O
and O
previous O
thermodynamic B-CMT
analyses I-CMT
. O


the O
polarization B-PRO
distributions I-PRO
of O
the O
ferroelectric B-PRO
– O
paraelectric B-PRO
bilayer B-DSC
are O
analyzed O
as O
a O
function O
of O
the O
thickness O
of O
the O
bilayer B-DSC
film I-DSC
, O
where O
there O
is O
a O
“ O
ferroelectric B-PRO
proximity I-PRO
effect I-PRO
” O
due O
to O
dipole B-PRO
– I-PRO
dipole I-PRO
interactions I-PRO
. O


the O
phase B-PRO
diagrams I-PRO
for O
both O
the O
bilayer B-DSC
and O
single B-DSC
layer I-DSC
films I-DSC
as O
a O
function O
of O
temperature O
and O
effective O
in-plane O
substrate B-DSC
strain O
are O
constructed O
. O


feasibility O
of O
producing O
Ti-6Al-4V B-MAT
alloy B-DSC
for O
engineering B-APL
application I-APL
by O
powder B-SMT
compact I-SMT
extrusion I-SMT
of O
blended O
elemental O
powder B-DSC
mixtures O


In O
this O
paper O
, O
two O
different O
powder B-SMT
compact I-SMT
extrusion I-SMT
processes O
were O
explored O
to O
rapidly O
produce O
Ti-6Al-4V B-MAT
alloys B-DSC
from O
the O
powder B-DSC
mixture O
of O
hydride O
- O
dehydride O
titanium B-MAT
powder B-DSC
, O
Al-V B-MAT
master O
alloy B-DSC
powder I-DSC
and O
elemental O
Al B-MAT
powder B-DSC
. O


the O
mechanical B-PRO
properties I-PRO
of O
the O
as-extruded B-DSC
Ti-6Al-4V B-MAT
alloys B-DSC
could O
achieve O
the O
yield B-PRO
strength I-PRO
of O
<nUm> O
– O
<nUm> O
MPa O
, O
the O
ultimate B-PRO
strength I-PRO
of O
<nUm> O
– O
<nUm> O
MPa O
and O
an O
elongation B-PRO
to I-PRO
fracture I-PRO
of O
about O
<nUm> O
% O
, O
which O
could O
meet O
the O
requirements O
of O
most O
engineering B-APL
applications I-APL
. O


influence O
of O
microstructure B-PRO
on O
the O
ionic B-PRO
conductivity I-PRO
of O
yttria B-MAT
- I-MAT
stabilized I-MAT
zirconia I-MAT
electrolyte B-APL


yttria B-MAT
- I-MAT
stabilized I-MAT
zirconia I-MAT
( O
YSZ B-MAT
) O
electrolytes B-APL
with O
diverse O
microstructures B-PRO
were O
prepared O
by O
using O
nano-size B-DSC
O52Y4Zr23 B-MAT
powders B-DSC
as O
precursors O
through O
conventional O
sintering B-SMT
in O
air O
. O


the O
electrolytes B-APL
were O
tested O
by O
AC B-CMT
impedance I-CMT
spectroscopy I-CMT
to O
elucidate O
the O
contribution O
of O
intragranular B-PRO
and O
intergranular B-PRO
conductivity I-PRO
to O
the O
total O
ionic B-PRO
conductivity I-PRO
. O


the O
intragranular B-PRO
conductivity I-PRO
and O
intergranular B-PRO
conductivity I-PRO
were O
correlated O
with O
the O
microstructures B-PRO
of O
the O
electrolyte B-APL
to O
interpret O
the O
transportation O
of O
oxygen O
ions O
through O
the O
electrolyte B-APL
. O


the O
intragranular B-PRO
conductivity I-PRO
was O
found O
to O
be O
dominated O
mainly O
by O
the O
relative O
density B-PRO
while O
the O
intergranular B-PRO
conductivity I-PRO
strongly O
depended O
on O
the O
grain B-PRO
size I-PRO
and O
grain B-PRO
boundary I-PRO
area I-PRO
of O
the O
electrolyte B-APL
. O


the O
sintering B-SMT
temperature O
and O
isothermal O
time O
dependence O
of O
ionic B-PRO
conductivity I-PRO
reached O
a O
maximum O
value O
of O
<nUm> O
S O
/ O
cm O
at O
a O
sintering B-SMT
temperature O
of O
<nUm> O
° O
C O
for O
<nUm> O
h O
and O
<nUm> O
S O
/ O
cm O
at O
a O
holding O
time O
of O
<nUm> O
h O
at O
<nUm> O
° O
C O
when O
measured O
at O
<nUm> O
° O
C O
, O
respectively O
. O


concepts O
for O
improving O
the O
ionic B-PRO
conductivity I-PRO
of O
YSZ B-MAT
electrolyte B-APL
were O
reviewed O
. O


characterization O
of O
p-CdTe B-MAT
/ O
n-CdS B-MAT
hetero B-APL
- I-APL
junctions I-APL


nano-crystalline B-DSC
CdTe B-MAT
/ O
CdS B-MAT
thin B-DSC
film I-DSC
hetero B-APL
- I-APL
junctions I-APL
have O
been O
grown O
on O
glass B-MAT
substrate B-DSC
by O
thermal B-SMT
evaporation I-SMT
technique I-SMT
. O


the O
growth O
conditions O
to O
get O
stoichiometric B-DSC
compound O
films B-DSC
have O
been O
optimized O
. O


the O
grown O
hetero B-APL
- I-APL
junctions I-APL
have O
been O
characterized O
for O
their O
I B-PRO
– I-PRO
V I-PRO
characteristics I-PRO
. O


analysis O
of O
I B-PRO
– I-PRO
V I-PRO
characteristics I-PRO
has O
been O
made O
to O
investigate O
the O
current B-PRO
conduction I-PRO
mechanism I-PRO
in O
p-CdTe B-MAT
/ O
n-CdS B-MAT
hetero B-APL
- I-APL
junction I-APL
. O


the O
band B-PRO
gap I-PRO
energy I-PRO
of O
cadmium B-MAT
telluride I-MAT
and O
cadmium B-MAT
sulfide I-MAT
films B-DSC
have O
been O
computed O
from O
the O
study O
of O
variation O
of O
resistance B-PRO
with O
temperature O
. O


based O
on O
the O
study O
, O
band B-PRO
diagram I-PRO
for O
p-CdTe B-MAT
/ O
n-CdS B-MAT
hetero B-APL
- I-APL
junction I-APL
has O
been O
proposed O
. O


preparation O
of O
high O
- O
density B-PRO
O2Ti B-MAT
nanodots B-DSC
on O
Si B-MAT
substrate B-DSC
by O
a O
novel O
method O


O2Ti B-MAT
nanodots B-DSC
can O
hopefully O
be O
used O
as O
optical B-APL
devices I-APL
, O
high O
performance O
sensor B-APL
and O
highly O
active O
catalyst B-APL
. O


the O
preparation O
of O
O2Ti B-MAT
nanodots B-DSC
with O
small O
dot B-PRO
size I-PRO
and O
high O
dot B-PRO
density I-PRO
on O
substrates B-DSC
becomes O
increasingly O
significant O
since O
small O
dot B-PRO
size I-PRO
can O
guarantee O
quantum O
effects O
and O
high O
activity B-PRO
, O
while O
high O
dot B-PRO
density I-PRO
can O
provide O
a O
basis O
for O
miniaturizing B-APL
devices I-APL
and O
increasing O
performance B-PRO
capacity I-PRO
. O


In O
this O
letter O
, O
high O
density B-PRO
O2Ti B-MAT
nanodots B-DSC
on O
Si B-MAT
substrate B-DSC
were O
prepared O
by O
a O
“ B-SMT
microscopic I-SMT
mass I-SMT
- I-SMT
point I-SMT
addition I-SMT
” I-SMT
method I-SMT
. O


SEM B-CMT
images O
and O
XPS B-CMT
profiles O
revealed O
that O
pure O
O2Ti B-MAT
nanodots B-DSC
with O
high O
density B-PRO
( O
∼ O
<nUm> O
× O
<nUm> O
cm-2 O
) O
could O
be O
fabricated O
on O
Si B-MAT
substrate B-DSC
and O
the O
average O
dot B-PRO
size I-PRO
could O
be O
adjusted O
( O
<nUm> O
nm O
∼ O
<nUm> O
nm O
) O
by O
temperature O
control O
of O
the O
substrate B-DSC
. O


it O
is O
suggested O
that O
the O
prepared O
high O
density B-PRO
O2Ti B-MAT
nanodots B-DSC
have O
great O
potential O
applications O
in O
fabrication O
of O
related O
devices O
. O


nanostructured B-DSC
CHf B-MAT
– I-MAT
CSi I-MAT
composites B-CMT
prepared O
by O
high B-SMT
- I-SMT
energy I-SMT
ball I-SMT
- I-SMT
milling I-SMT
and O
reactive B-SMT
spark I-SMT
plasma I-SMT
sintering I-SMT


A O
novel O
route O
combining O
the O
reactive B-SMT
spark I-SMT
plasma I-SMT
sintering I-SMT
( O
R-SPS B-SMT
) O
and O
HfSi2-C B-MAT
powders B-DSC
was O
proposed O
for O
fabricating O
dense O
and O
nano-structured B-DSC
CHf B-MAT
– I-MAT
CSi I-MAT
composites B-DSC
. O


ultra-fine O
and O
homogeneously O
distributed O
CHf B-MAT
( O
<nUm> O
nm O
) O
and O
CSi B-MAT
( O
<nUm> O
nm O
) O
grains O
were O
obtained O
after O
sintering B-SMT
at O
<nUm> O
° O
C O
, O
which O
were O
attributed O
to O
the O
molecular O
- O
level O
homogeneity O
of O
Si B-MAT
and O
Hf B-MAT
in O
HfSi2 B-MAT
, O
the O
high B-SMT
- I-SMT
energy I-SMT
ball I-SMT
- I-SMT
milling I-SMT
of O
raw O
powders B-DSC
and O
low O
sintering B-SMT
temperature O
by O
R-SPS B-SMT
. O


the O
fracture B-PRO
toughness I-PRO
of O
the O
composites B-DSC
was O
improved O
up O
to O
<nUm> O
MPam1 O
/ O
<nUm> O
because O
of O
the O
homogeneous O
distribution O
of O
CHf B-MAT
and O
CSi B-MAT
grains O
and O
consequent O
enhancement O
of O
crack B-PRO
deflection I-PRO
. O


electronic B-PRO
and O
geometric B-PRO
structure I-PRO
of O
thin B-DSC
CoO(100) B-MAT
films B-DSC
studied O
by O
angle B-CMT
- I-CMT
resolved I-CMT
photoemission I-CMT
spectroscopy I-CMT
and O
auger B-CMT
electron I-CMT
diffraction I-CMT


we O
have O
prepared O
ordered O
thin B-DSC
films I-DSC
of O
CoO B-MAT
by O
evaporating O
cobalt B-MAT
in O
an O
O O
atmosphere O
on O
to O
a O
heated B-SMT
( O
500K O
) O
Ag(100) B-MAT
substrate B-DSC
. O


the O
geometric B-PRO
and O
electronic B-PRO
structure I-PRO
of O
the O
films B-DSC
was O
characterized O
by O
means O
of O
auger B-CMT
electron I-CMT
diffraction I-CMT
( O
AED B-CMT
) O
and O
angle B-CMT
- I-CMT
resolved I-CMT
photoemission I-CMT
spectroscopy I-CMT
( O
ARUPS B-CMT
) O
, O
respectively O
. O


the O
experimental O
AED B-CMT
results O
were O
compared O
with O
simulated O
data O
, O
which O
showed O
that O
the O
film B-DSC
grows O
in O
( O
<nUm> O
) O
orientation O
on O
the O
Ag(100) B-MAT
substrate B-DSC
. O


synchrotron B-CMT
- I-CMT
radiation I-CMT
- I-CMT
induced I-CMT
photoemission I-CMT
investigations O
were O
performed O
in O
the O
photon O
energy O
range O
from O
25eV O
to O
67eV O
. O


the O
dispersion O
of O
the O
transitions O
was O
found O
to O
be O
similar O
to O
that O
of O
previous O
results O
on O
a O
single B-DSC
- I-DSC
crystal I-DSC
CoO(100) B-MAT
surface B-DSC
. O


the O
resonance B-PRO
behaviour I-PRO
of O
the O
photoemission B-CMT
lines O
in O
the O
valence B-PRO
- I-PRO
band I-PRO
region O
was O
investigated O
by O
constant-initial-state B-CMT
( I-CMT
CIS I-CMT
) I-CMT
spectroscopy I-CMT
. O


the O
implications O
of O
this O
behaviour O
for O
assignment O
of O
the O
photoemission B-CMT
lines O
to O
specific O
electronic B-PRO
transitions I-PRO
is O
discussed O
and O
compared O
with O
published O
theoretical O
models O
of O
the O
electronic B-PRO
structure I-PRO
. O


effect O
of O
tetravalent O
titanium B-MAT
ions O
substitution O
on O
the O
dielectric B-PRO
properties I-PRO
of O
Co B-MAT
– I-MAT
Zn I-MAT
ferrites I-MAT


A O
series O
of O
polycrystalline B-DSC
spinel B-SPL
ferrites B-MAT
with O
composition O
Co0.4Zn0.6+XTiXFe2-2XO4 B-MAT
, I-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
and I-MAT
<nUm> I-MAT
) I-MAT
were O
prepared O
by O
the O
standard O
ceramic B-SMT
method I-SMT
to O
study O
the O
effect O
of O
Ti B-MAT
ions O
substitution O
on O
their O
AC B-PRO
electrical I-PRO
conductivity I-PRO
and O
dielectric B-PRO
properties I-PRO
at O
different O
frequencies O
and O
temperatures O
. O


it O
was O
found O
that O
the O
electrical B-PRO
conductivity I-PRO
decreases O
as O
Ti B-MAT
ions O
substitution O
increases O
. O


the O
results O
of O
electrical B-PRO
conductivity I-PRO
were O
explained O
on O
the O
basis O
of O
the O
polaron B-PRO
conduction I-PRO
mechanism I-PRO
. O


the O
results O
of O
the O
dielectric B-PRO
constant I-PRO
and O
dielectric B-PRO
loss I-PRO
were O
explained O
with O
the O
aid O
of O
rezlescu B-CMT
model I-CMT
and O
koops B-CMT
phenomenological I-CMT
theory I-CMT
. O


multistage B-SMT
strain I-SMT
aging I-SMT
of O
low-carbon B-MAT
steels I-MAT


In O
the O
present O
study O
, O
a O
new O
multistage B-CMT
torsion I-CMT
test I-CMT
was O
developed O
to O
study O
the O
effect O
of O
temperature O
, O
solute O
level O
and O
interpass O
time O
( O
IPT O
) O
on O
static B-PRO
strain I-PRO
aging I-PRO
behaviour I-PRO
. O


the O
objective O
of O
the O
present O
work O
was O
to O
study O
strain B-SMT
aging I-SMT
under O
conditions O
closer O
to O
actual O
wire B-DSC
drawing B-SMT
( O
i.e. O
large O
strains O
, O
high O
strain O
rates O
and O
multistage B-SMT
strain I-SMT
aging I-SMT
) O
using O
torsional B-SMT
deformation I-SMT
. O


the O
torsion B-CMT
test I-CMT
allowed O
for O
a O
rapid O
, O
accurate O
and O
controlled O
method O
to O
simulate O
a O
range O
of O
microstructures B-PRO
and O
the O
subsequent O
testing O
of O
the O
metallurgical B-PRO
properties I-PRO
of O
the O
material O
. O


the O
multistage B-CMT
torsion I-CMT
test I-CMT
was O
found O
to O
be O
suitable O
for O
the O
investigation O
of O
multistage B-SMT
strain I-SMT
aging I-SMT
in O
low-carbon B-MAT
steels I-MAT
under O
conditions O
of O
large O
strain O
and O
high O
strain O
rate O
. O


major O
characteristics O
of O
the O
multistage B-CMT
torsion I-CMT
flow I-CMT
stress I-CMT
– I-CMT
strain I-CMT
curves I-CMT
reported O
for O
the O
first O
time O
include O
: O
( O
i O
) O
pronounced O
upper O
yield B-PRO
points I-PRO
and O
/ O
or O
strength B-PRO
increments I-PRO
( O
DY B-PRO
) O
after O
each O
aging B-SMT
step O
indicative O
of O
static B-SMT
strain I-SMT
aging I-SMT
; O
( O
ii O
) O
high O
initial O
work B-SMT
hardening I-SMT
rates O
, O
followed O
by O
very O
low O
work B-SMT
hardening I-SMT
in O
the O
presence O
of O
DY B-PRO
; O
and O
( O
iii O
) O
serrated O
flow O
at O
temperatures O
of O
<nUm> O
° O
C O
and O
higher O
indicative O
of O
dynamic B-SMT
strain I-SMT
aging I-SMT
. O


it O
was O
found O
that O
in O
general O
multistage B-SMT
strain I-SMT
aging I-SMT
was O
detrimental O
to O
the O
ductility B-PRO
of O
the O
material O
. O


it O
was O
also O
found O
that O
strain B-SMT
aging I-SMT
was O
in O
itself O
dependent O
on O
the O
strain B-SMT
aging I-SMT
history O
of O
the O
material O
, O
decreasing O
with O
increasing O
prior O
strain B-SMT
aging I-SMT
. O


hydrothermal B-SMT
synthesis I-SMT
and O
resistive B-PRO
switching I-PRO
behaviour I-PRO
of O
O3W B-MAT
/ O
CoO4W B-MAT
core B-DSC
– I-DSC
shell I-DSC
nanowires I-DSC


high O
quality O
O3W B-MAT
/ O
CoO4W B-MAT
core B-DSC
– I-DSC
shell I-DSC
nanowires I-DSC
have O
been O
successfully O
prepared O
by O
a O
hydrothermal B-SMT
process I-SMT
. O


bipolar B-PRO
resistive I-PRO
switching I-PRO
behavior I-PRO
in O
a O
Ag B-MAT
/ O
[ O
O3W B-MAT
/ O
CoO4W B-MAT
] O
/ O
Ag B-MAT
device O
is O
demonstrated O
. O


the O
device O
can O
maintain O
superior O
stability B-PRO
over O
<nUm> O
cycles O
with O
an O
OFF B-PRO
/ I-PRO
ON I-PRO
- I-PRO
state I-PRO
resistance I-PRO
ratio I-PRO
of O
about O
<nUm> O
at O
room O
temperature O
. O


the O
physical O
model O
of O
conducting B-PRO
filament I-PRO
formation O
due O
to O
the O
diffusion O
of O
Ag B-MAT
ions O
along O
the O
O3W B-MAT
/ O
CoO4W B-MAT
core B-DSC
– I-DSC
shell I-DSC
nanowires I-DSC
at O
high O
electric O
field O
has O
been O
suggested O
to O
explain O
the O
bipolar B-PRO
resistive I-PRO
switching I-PRO
behavior I-PRO
. O


grain B-PRO
size I-PRO
dependence O
of O
young B-PRO
's I-PRO
modulus I-PRO
and O
hardness B-PRO
for O
nanocrystalline B-DSC
NiTi B-MAT
shape B-PRO
memory I-PRO
alloy B-DSC


In O
this O
paper O
, O
grain B-PRO
size I-PRO
( O
GS B-PRO
) O
dependence O
of O
young B-PRO
's I-PRO
modulus I-PRO
and O
hardness B-PRO
for O
nanocrystalline B-DSC
NiTi B-MAT
shape B-PRO
memory I-PRO
alloy B-DSC
is O
investigated O
by O
experiments O
. O


amorphous B-DSC
NiTi B-MAT
with O
nanocrystalline B-DSC
debris O
is O
fabricated O
via O
cold B-SMT
- I-SMT
rolling I-SMT
and O
polycrystalline B-DSC
NiTi B-MAT
with O
average O
GS B-PRO
from O
<nUm> O
nm O
to O
<nUm> O
nm O
is O
obtained O
by O
subsequent O
annealing B-SMT
. O


young B-PRO
's I-PRO
modulus I-PRO
and O
hardness B-PRO
of O
nanocrystalline B-DSC
NiTi B-MAT
are O
quantified O
by O
macroscopic B-CMT
isothermal I-CMT
tension I-CMT
and O
microscopic B-CMT
nanoindentation I-CMT
. O


it O
is O
shown O
that O
young B-PRO
's I-PRO
modulus I-PRO
of O
nanocrystalline B-DSC
NiTi B-MAT
first O
decreases O
( O
for O
GS B-PRO
< O
<nUm> O
nm O
) O
and O
then O
increases O
( O
for O
GS B-PRO
> O
<nUm> O
nm O
) O
with O
GS B-PRO
in O
the O
nano-scale O
region O
. O


the O
non-monotonic O
GS B-PRO
dependence O
of O
young B-PRO
's I-PRO
modulus I-PRO
originates O
from O
the O
combined O
effects O
of O
grain B-PRO
size I-PRO
and O
volume O
fractions O
of O
austenite B-SPL
, O
martensite B-SPL
and O
amorphous B-DSC
phase O
in O
the O
material O
. O


it O
is O
also O
shown O
that O
with O
the O
increase O
of O
GS B-PRO
up O
to O
<nUm> O
nm O
, O
hardness B-PRO
of O
nanocrystalline B-DSC
NiTi B-MAT
monotonically O
decreases O
due O
to O
the O
reduced O
nominal O
phase B-PRO
transition I-PRO
stress I-PRO
and O
plastic B-PRO
yielding I-PRO
stress I-PRO
. O


such O
GS B-PRO
dependence O
of O
hardness B-PRO
can O
be O
utilized O
for O
rapid O
determination O
of O
GS B-PRO
in O
nanocrystalline B-DSC
NiTi B-MAT
via O
nanoindentation B-CMT
hardness I-CMT
test I-CMT
. O


photoluminescence B-CMT
study O
of O
GeSi B-MAT
quantum B-DSC
well I-DSC
broadening O
by O
rapid B-SMT
thermal I-SMT
annealing I-SMT


photoluminescence B-CMT
was O
used O
to O
measure O
the O
broadening O
of O
thin O
( O
t O
= O
<nUm> O
– O
<nUm> O
A O
̊ O
) O
GeSi B-MAT
quantum B-APL
wells I-APL
( O
QW B-APL
) O
under O
typical O
RTA O
conditions O
. O


an O
anneal B-SMT
time O
of O
<nUm> O
s O
and O
temperatures O
ranging O
from O
<nUm> O
to O
<nUm> O
° O
C O
were O
used O
. O


“ O
No O
phonon O
” O
GeSi B-MAT
transition B-PRO
energy I-PRO
shifts O
of O
up O
to O
<nUm> O
meV O
are O
measured O
. O


results O
are O
analyzed O
taking O
into O
account O
the O
initial O
diffusion O
during O
growth O
, O
the O
increase O
in O
QW B-APL
bandgap B-PRO
due O
to O
intermixing O
and O
the O
decrease O
in O
quantum B-PRO
confinement I-PRO
. O


interdiffusivity B-PRO
values O
showing O
an O
arrhenius B-PRO
behavior I-PRO
and O
an O
activation B-PRO
energy I-PRO
of O
<nUm> O
eV O
are O
obtained O
. O


bismuth B-MAT
nanodendrites B-DSC
as O
a O
high O
performance O
electrocatalyst B-APL
for O
selective B-APL
conversion I-APL
of I-APL
CO2 I-APL
to I-APL
formate I-APL


A O
nanostructured B-DSC
bismuth B-MAT
dendrite B-DSC
catalyst B-APL
was O
designed O
and O
directly O
grown O
on O
treated O
carbon B-MAT
paper O
using O
a O
novel O
electrochemical B-SMT
deposition I-SMT
method O
. O


it O
exhibits O
an O
excellent O
performance O
for O
efficient O
CO2 B-APL
reduction I-APL
to O
formate O
, O
achieving O
a O
maximum O
faradaic B-PRO
efficiency I-PRO
of O
<nUm> O
% O
with O
a O
current B-PRO
density I-PRO
of O
<nUm> O
mA O
cm-2 O
. O


the O
catalyst B-APL
is O
shown O
to O
be O
stable O
during O
<nUm> O
h O
of O
continuous O
electrolysis O
. O


all O
electrochemical B-SMT
fabrication I-SMT
of O
a O
bilayer B-DSC
membrane I-DSC
composed O
of O
nanotubular B-DSC
photocatalyst B-APL
and O
palladium B-MAT
toward O
high O
- O
purity O
hydrogen B-APL
production I-APL


we O
developed O
an O
all B-SMT
- I-SMT
electrochemical I-SMT
technique I-SMT
for O
fabricating O
a O
bilayer B-DSC
structure I-DSC
of O
a O
titanium B-MAT
dioxide I-MAT
( O
O2Ti B-MAT
) O
nanotube B-DSC
array I-DSC
( O
TNA B-MAT
) O
and O
a O
palladium B-MAT
film B-DSC
( O
TNA B-MAT
/ O
Pd B-MAT
membrane B-DSC
) O
, O
which O
works O
for O
photocatalytic B-APL
high I-APL
- I-APL
purity I-APL
hydrogen I-APL
production I-APL
. O


electroless B-SMT
plating I-SMT
was O
used O
for O
depositing O
the O
Pd B-MAT
film B-DSC
on O
the O
TNA B-MAT
surface B-DSC
prepared O
by O
anodizing B-SMT
a O
titanium B-MAT
foil B-DSC
. O


A O
3-mm-thick O
TNA B-MAT
/ O
Pd B-MAT
membrane B-DSC
without O
any O
pinholes O
in O
a O
1.5-cm-diameter O
area O
was O
fabricated O
by O
transferring O
a O
1-mm-thick O
TNA B-MAT
onto O
an O
electroless B-SMT
- I-SMT
plated I-SMT
2-mm-thick O
Pd B-MAT
film B-DSC
with O
a O
mechanical B-SMT
peel I-SMT
- I-SMT
off I-SMT
process I-SMT
. O


this O
ultrathin B-DSC
membrane I-DSC
with O
sufficient O
mechanical B-PRO
robustness I-PRO
showed O
photocatalytic B-APL
H I-APL
production I-APL
via O
methanol B-APL
reforming I-APL
under O
ultraviolet O
illumination O
on O
the O
TNA B-MAT
side O
, O
immediately O
followed O
by O
the O
purification O
of O
the O
generated O
H O
gas O
through O
the O
Pd B-MAT
layer B-DSC
. O


the O
hydrogen B-PRO
production I-PRO
rate I-PRO
and O
the O
apparent O
quantum O
yield O
for O
high O
- O
purity O
H B-APL
production I-APL
from O
methanol O
/ O
water O
mixture O
with O
the O
TNA B-MAT
/ O
Pd B-MAT
membrane B-DSC
were O
also O
examined O
. O


this O
work O
suggests O
that O
palladium B-MAT
electroless B-SMT
plating I-SMT
is O
more O
suitable O
and O
practical O
for O
preparing O
a O
well O
- O
organized O
TNA B-MAT
/ O
Pd B-MAT
heterointerface B-DSC
than O
palladium B-MAT
sputter B-SMT
deposition I-SMT
. O


A O
new O
processing O
technique O
for O
copper B-MAT
– O
graphite B-MAT
multifilamentary B-DSC
nanocomposite I-DSC
wire I-DSC
: O
microstructures B-PRO
and O
electrical B-PRO
properties I-PRO


copper B-MAT
– O
graphite B-MAT
composites B-DSC
are O
used O
and O
under O
investigations O
for O
various O
applications O
. O


the O
reported O
manufacturing O
methods O
are O
diverse O
, O
but O
no O
process O
is O
available O
to O
fabricate O
a O
multifilamentary O
copper B-MAT
– O
graphite B-MAT
wire B-DSC
with O
a O
large O
number O
of O
graphite B-MAT
filaments B-DSC
. O


A O
new O
processing O
route O
is O
described O
which O
allows O
the O
fabrication O
of O
such O
composite B-DSC
with O
more O
than O
<nUm> O
millions O
of O
graphite B-MAT
filaments B-DSC
in O
a O
<nUm> O
mm O
diameter O
copper B-MAT
wire B-DSC
. O


the O
resulting O
microstructures B-PRO
and O
electrical B-PRO
properties I-PRO
are O
presented O
and O
discussed O
. O


temperature O
and O
microstructure B-PRO
effects O
on O
corrosion B-PRO
behavior I-PRO
of O
annealed B-SMT
Fe B-MAT
– I-MAT
xTi I-MAT
– I-MAT
yC I-MAT
alloys B-DSC
in O
sulphuric O
acid O
solution O


In O
this O
study O
, O
the O
corrosion B-PRO
resistance I-PRO
of O
annealed B-SMT
ternary O
alloys B-DSC
Fe B-MAT
– I-MAT
xTi I-MAT
– I-MAT
yC I-MAT
in O
aerated O
<nUm> O
m O
H2O4S O
using O
potentiodynamic B-CMT
polarization I-CMT
, O
linear B-CMT
polarization I-CMT
resistance I-CMT
and O
electrochemical B-CMT
impedance I-CMT
spectroscopy I-CMT
( O
EIS B-CMT
) O
techniques O
is O
investigated O
. O


the O
characterization O
is O
done O
using O
x-ray B-CMT
diffractometry I-CMT
( O
XRD B-CMT
) O
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
coupled O
with O
energy B-CMT
dispersive I-CMT
analysis I-CMT
x-ray I-CMT
( O
EDAX B-CMT
) O
. O


all O
the O
studied O
alloys B-DSC
are O
less O
resistant O
to O
corrosion O
in O
the O
considered O
solution O
as O
the O
temperature O
rising O
from O
<nUm> O
to O
<nUm> O
° O
C O
. O


the O
obtained O
results O
also O
reveal O
that O
the O
corrosion B-PRO
resistance I-PRO
is O
not O
dependent O
on O
Ti B-MAT
content O
but O
is O
related O
on O
the O
crystalline B-DSC
phases O
present O
on O
metal O
surface B-DSC
. O


the O
Fe B-MAT
– I-MAT
3Ti I-MAT
– I-MAT
2C I-MAT
has O
a O
better O
corrosion B-PRO
resistance I-PRO
and O
interesting O
microstructure B-PRO
due O
to O
the O
uniform O
superficial O
distribution O
of O
the O
a-Ti B-MAT
phase O
. O


dependence O
of O
the O
magnetocaloric B-PRO
effect I-PRO
on O
oxygen B-PRO
stoichiometry I-PRO
in O
polycrystalline B-DSC
la2 B-MAT
/ I-MAT
3Ba1 I-MAT
/ I-MAT
3MnO3 I-MAT
– I-MAT
δ I-MAT


polycrystalline B-DSC
perovskites B-SPL
la2 B-MAT
/ I-MAT
3Ba1 I-MAT
/ I-MAT
3MnO3-d I-MAT
with O
different O
oxygen B-PRO
deficiency I-PRO
d(0d0.10) I-PRO
have O
been O
prepared O
by O
a O
modified O
sol B-SMT
– I-SMT
gel I-SMT
method O
and O
their O
curie B-PRO
temperatures I-PRO
and O
magnetocaloric B-PRO
effect I-PRO
have O
been O
studied O
. O


A O
close O
relationship O
is O
confirmed O
to O
hold O
between O
the O
curie B-PRO
temperature I-PRO
and O
the O
oxygen B-PRO
stoichiometry I-PRO
. O


the O
maximum O
magnetic B-PRO
entropy I-PRO
change O
is O
in O
the O
order O
of O
<nUm> O
J O
/ O
kgK O
and O
peaks O
at O
curie B-PRO
temperature I-PRO
for O
la2 B-MAT
/ I-MAT
3Ba1 I-MAT
/ I-MAT
3MnO3 I-MAT
upon O
10kOe O
applied O
field O
change O
. O


for O
the O
samples O
with O
oxygen B-PRO
deficiency I-PRO
, O
a O
reduction O
of O
the O
maximum O
magnetic B-PRO
entropy I-PRO
change O
has O
been O
observed O
. O


high O
temperature O
proton B-CMT
NMR I-CMT
study O
of O
yttrium B-MAT
doped B-DSC
barium B-MAT
cerates I-MAT


the O
mobility B-PRO
of I-PRO
protons I-PRO
in O
BaCe1-xYxO3-d B-MAT
perovskite B-SPL
( O
x O
= O
<nUm> O
to O
<nUm> O
) O
was O
investigated O
by O
high O
temperature O
1H B-CMT
NMR I-CMT
spin B-PRO
- I-PRO
lattice I-PRO
relaxation I-PRO
time I-PRO
( O
T1 B-PRO
) O
and O
ac B-PRO
conductivity I-PRO
measurements O
. O


the O
temperature O
variation O
of O
T1 B-PRO
was O
obtained O
from O
room O
temperature O
to O
<nUm> O
K O
. O


the O
absolute O
magnitude O
of O
T1 B-PRO
shows O
a O
complex O
dependence O
on O
doping B-PRO
concentration I-PRO
. O


however O
, O
the O
shape O
of O
the O
temperature O
dependence O
of O
T1 B-PRO
was O
independent O
of O
the O
doping B-PRO
concentration I-PRO
, O
suggesting O
the O
absence O
of O
major O
differences O
of O
the O
proton B-PRO
hopping I-PRO
mechanism I-PRO
on O
doping O
level O
of O
this O
material O
. O


the O
measured O
conductivity B-PRO
was O
well O
reproduced O
by O
a O
simple O
hopping B-CMT
model I-CMT
using O
correlation B-PRO
times I-PRO
of I-PRO
proton I-PRO
migration I-PRO
and O
proton B-PRO
concentrations I-PRO
estimated O
from O
the O
NMR B-CMT
measurement O
. O


optical B-CMT
studies I-CMT
of O
tunneling O
in O
double B-APL
barrier I-APL
diodes I-APL


we O
describe O
time B-CMT
integrated I-CMT
and I-CMT
time I-CMT
resolved I-CMT
photoluminescence I-CMT
measurements O
made O
on O
symmetric O
and O
asymmetric O
AsGa B-MAT
/ O
AlAs B-MAT
double B-APL
barrier I-APL
resonant I-APL
tunneling I-APL
diodes I-APL
in O
order O
to O
explore O
the O
relationship O
between O
the O
optical B-PRO
and O
electrical B-PRO
properties I-PRO
. O


we O
find O
that O
the O
photoluminescence B-CMT
intensity O
arising O
from O
recombination O
in O
the O
quantum B-APL
well I-APL
in O
our O
structures O
is O
a O
complicated O
function O
of O
bias O
being O
determined O
by O
the O
details O
of O
both O
electron O
and O
photogenerated B-PRO
hole I-PRO
transport I-PRO
through O
the O
emitter B-APL
and O
collector B-APL
barriers B-PRO
as O
well O
as O
the O
hole B-PRO
dynamics I-PRO
in O
the O
collector B-APL
depletion B-PRO
region I-PRO
. O


features O
attributable O
to O
resonant B-PRO
hole I-PRO
tunneling I-PRO
are O
apparent O
in O
the O
variation O
of O
photoluminescence B-CMT
intensity O
with O
bias O
. O


under O
high O
intensity O
photoexcitation O
a O
substantial O
hole B-PRO
current I-PRO
can O
develop O
which O
reveals O
itself O
through O
additional O
features O
in O
the O
current B-PRO
- I-PRO
bias I-PRO
characteristic I-PRO
. O


interface B-DSC
tailoring O
for O
adhesion B-PRO
enhancement O
of O
diamond B-MAT
- I-MAT
like I-MAT
carbon I-MAT
thin B-DSC
films I-DSC


we O
have O
explored O
the O
suitability O
and O
characteristics O
of O
interface B-DSC
tailoring O
as O
a O
tool O
for O
enhancing O
the O
adhesion B-PRO
of O
hydrogen B-DSC
- I-DSC
free I-DSC
diamond B-MAT
- I-MAT
like I-MAT
carbon I-MAT
( O
DLC B-MAT
) O
thin B-DSC
films I-DSC
to O
silicon B-MAT
substrates B-DSC
. O


DLC B-MAT
films B-DSC
were O
deposited O
on O
silicon B-MAT
with O
and O
without O
application O
of O
an O
initial O
high B-SMT
energy I-SMT
carbon I-SMT
ion I-SMT
bombardment I-SMT
phase O
that O
formed O
a O
broad O
Si B-MAT
– O
C B-MAT
interface B-DSC
of O
gradually O
changing O
Si B-MAT
: I-MAT
C I-MAT
composition B-PRO
. O


the O
interface B-PRO
depth I-PRO
profile I-PRO
was O
calculated O
using O
the O
TRIDYN B-CMT
simulation I-CMT
program I-CMT
, O
revealing O
a O
gradient O
of O
carbon B-PRO
concentration I-PRO
including O
a O
region O
with O
the O
stoichiometry B-PRO
of O
silicon B-MAT
carbide I-MAT
. O


DLC B-MAT
films B-DSC
on O
silicon B-MAT
, O
with O
and O
without O
interface B-DSC
tailoring O
, O
were O
characterized O
using O
raman B-CMT
spectroscopy I-CMT
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
, O
atomic B-CMT
force I-CMT
microscopy I-CMT
and O
scratch B-CMT
tests I-CMT
. O


the O
raman B-CMT
spectroscopy I-CMT
results O
indicated O
sp3 B-PRO
- I-PRO
type I-PRO
carbon I-PRO
bonding I-PRO
content I-PRO
of O
up O
to O
<nUm> O
% O
. O


formation O
of O
a O
broadened O
Si B-MAT
: I-MAT
C I-MAT
interface B-DSC
as O
formed O
here O
significantly O
enhances O
the O
adhesion B-PRO
of O
DLC B-MAT
films B-DSC
to O
the O
underlying O
silicon B-MAT
substrate B-DSC
. O


Cr(III) B-MAT
exchange O
on O
zeolites B-MAT
obtained O
from O
kaolin B-MAT
and O
natural O
mordenite B-MAT


zeolites B-MAT
with O
high O
Cr(III) B-PRO
exchange I-PRO
capacity I-PRO
were O
synthesized O
from O
kaolin B-MAT
and O
natural O
mordenite B-MAT
. O


the O
intermediate O
phases O
and O
final O
products O
were O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
, O
FTIR B-CMT
spectroscopy I-CMT
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
, O
thermogravimetric B-CMT
analysis I-CMT
, O
N B-CMT
- I-CMT
adsorption I-CMT
and O
chromium B-PRO
exchange I-PRO
capacity I-PRO
( O
CrEC B-PRO
) O
. O


In O
addition O
, O
precise O
zeolitic O
phases O
were O
identified O
using O
the O
TOPAS B-CMT
program I-CMT
based O
on O
rietveld B-CMT
refinement I-CMT
. O


hydrothermal B-SMT
synthesis I-SMT
from O
kaolin B-MAT
leads O
to O
the O
formation O
of O
a O
mixture O
of O
zeolites-X B-MAT
and O
A O
. O


At O
higher O
hydrothermal B-SMT
treatment I-SMT
period O
, O
zeolite-X B-MAT
( O
space O
group O
fd-3 B-SPL
) O
appears O
as O
the O
dominant O
phase O
. O


In O
the O
synthesis O
from O
natural O
mordenite B-MAT
a O
mixture O
of O
zeolite-Y B-MAT
( O
fd-3m B-SPL
) O
and O
orthorhombic B-SPL
zeolite-P2 B-MAT
( O
pnma B-SPL
<nUm> O
) O
is O
formed O
, O
obtaining O
a O
more O
pure O
zeolite-P B-MAT
with O
the O
increase O
in O
reaction O
time O
. O


the O
differences O
in O
the O
course O
of O
the O
crystallization O
/ O
transformation O
process O
in O
both O
systems O
are O
explained O
in O
terms O
of O
the O
differences O
in O
the O
dissolution B-PRO
rate I-PRO
of O
the O
starting O
materials O
in O
alkaline O
medium O
. O


the O
CrEC B-PRO
of O
synthesis O
products O
was O
determined O
by O
the O
type O
of O
zeolite B-MAT
and O
the O
fraction O
of O
amorphous B-DSC
phase O
in O
the O
solid O
product O
. O


it O
was O
found O
that O
the O
highest O
CrEC B-PRO
is O
obtained O
for O
synthesis O
products O
containing O
FAU O
- O
type O
zeolites B-MAT
. O


the O
chromium B-MAT
exchange O
on O
FAU B-MAT
zeolites I-MAT
is O
favored O
due O
to O
the O
larger O
pore O
opening O
, O
which O
facilitates O
the O
diffusion O
of O
large O
hydrated O
chromium B-MAT
ions O
into O
the O
internal O
cation O
exchange O
sites O
. O


synthesized O
zeolite B-MAT
products O
presented O
higher O
Cr(III) B-PRO
exchange I-PRO
capacity I-PRO
than O
commercial O
zeolites B-MAT
. O


these O
results O
suggest O
that O
the O
use O
of O
these O
synthesized O
materials O
in O
Cr(III) B-APL
removal I-APL
from O
industrial O
wastewater O
could O
be O
promising O
. O


pressure O
and O
temperature O
dependence O
of O
raman B-CMT
scattering I-CMT
and O
optical B-CMT
absorption I-CMT
in O
crystalline B-DSC
NS B-MAT


raman B-CMT
scattering I-CMT
and O
optical B-CMT
absorption I-CMT
in O
crystalline B-DSC
NS B-MAT
have O
been O
measured O
both O
as O
a O
function O
of O
pressure O
at O
<nUm> O
K O
and O
low O
temperatures O
. O


polarized O
single B-DSC
crystal I-DSC
raman B-CMT
data O
were O
also O
obtained O
as O
an O
aid O
in O
the O
assignment O
of O
the O
raman B-SMT
active O
phonons O
. O


the O
pressure B-PRO
coefficients I-PRO
of O
the O
raman B-CMT
active O
external O
and O
S-S B-PRO
stretching I-PRO
modes I-PRO
show O
a O
discontinuity O
near O
<nUm> O
kbar O
indicative O
of O
a O
second O
order O
phase O
change O
. O


the O
optical B-PRO
absorption I-PRO
edge I-PRO
at O
about O
<nUm> O
eV O
of O
a O
sublimed O
film B-DSC
of O
NS B-MAT
shows O
red O
shifts O
of O
<nUm> O
× O
<nUm> O
− O
<nUm> O
eV O
bar-1 O
and O
<nUm> O
× O
<nUm> O
− O
<nUm> O
eV O
K-1 O
with O
pressure O
and O
temperature O
respectively O
. O


In O
the O
light O
of O
these O
results O
, O
the O
electronic B-PRO
, O
vibrational B-PRO
and O
structural B-PRO
properties I-PRO
of O
the O
crystal B-DSC
are O
discussed O
. O


temperature O
and O
composition B-PRO
dependence O
of O
magnetic B-PRO
properties I-PRO
of O
cobalt B-MAT
– O
chromium B-MAT
co-substituted B-DSC
magnesium B-MAT
ferrite I-MAT
nanomaterials B-DSC


the O
temperature O
and O
composition B-PRO
dependence O
of O
magnetic B-PRO
properties I-PRO
of O
Co B-MAT
– I-MAT
Cr I-MAT
co-substituted B-DSC
magnesium B-MAT
ferrite I-MAT
, O
Mg1-xCoxCrxFe2-xO4 B-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
– I-MAT
<nUm> I-MAT
) I-MAT
, O
prepared O
by O
novel O
polyethylene B-SMT
glycol I-SMT
assisted I-SMT
microemulsion I-SMT
method I-SMT
, O
are O
studied O
. O


the O
synthesized O
materials O
are O
characterized O
by O
the O
mossbauer B-CMT
spectrometer I-CMT
and O
standard O
magnetic B-CMT
measurements I-CMT
. O


major O
hysteresis B-PRO
loops I-PRO
are O
measured O
up O
to O
the O
magnetic O
field O
of O
50kOe O
at O
<nUm> O
, O
<nUm> O
and O
100K O
. O


the O
high O
field O
regimes O
of O
these O
loops O
are O
modeled O
using O
the O
law B-CMT
of I-CMT
approach I-CMT
to I-CMT
saturation I-CMT
to O
determine O
the O
first B-PRO
- I-PRO
order I-PRO
cubic I-PRO
anisotropy I-PRO
coefficient I-PRO
and O
saturation B-PRO
magnetization I-PRO
. O


both O
the O
saturation B-PRO
magnetization I-PRO
and O
the O
anisotropy B-PRO
coefficient I-PRO
are O
observed O
to O
increase O
with O
the O
decrease O
in O
temperature O
for O
all O
Co B-MAT
– O
Cr B-MAT
co-substitution O
levels O
. O


also O
, O
both O
the O
saturation B-PRO
magnetization I-PRO
and O
the O
anisotropy B-PRO
coefficient I-PRO
achieved O
maximum O
value O
at O
x O
= O
<nUm> O
and O
x O
= O
<nUm> O
, O
respectively O
. O


explanation O
of O
the O
observed O
behavior O
is O
proposed O
in O
terms O
of O
the O
site B-PRO
occupancy I-PRO
of O
the O
co-substituent O
, O
co2+ O
and O
cr3+ O
in O
the O
cubic B-SPL
spinel I-SPL
lattice O
. O


effect O
of O
GZO B-MAT
thickness O
and O
annealing B-SMT
temperature O
on O
the O
structural B-PRO
, O
electrical B-PRO
and O
optical B-PRO
properties I-PRO
of O
GZO B-MAT
/ O
Ag B-MAT
/ O
GZO B-MAT
sandwich B-DSC
films I-DSC


the O
GZO B-MAT
/ O
Ag B-MAT
/ O
GZO B-MAT
sandwich B-DSC
films I-DSC
were O
deposited O
on O
glass B-MAT
substrates B-DSC
by O
RF B-SMT
magnetron I-SMT
sputtering I-SMT
of O
Ga B-MAT
- O
doped B-DSC
OZn B-MAT
( O
GZO B-MAT
) O
and O
ion B-SMT
- I-SMT
beam I-SMT
sputtering I-SMT
of O
Ag B-MAT
at O
room O
temperature O
. O


the O
effect O
of O
GZO B-MAT
thickness O
and O
annealing B-SMT
temperature O
on O
the O
structural B-PRO
, O
electrical B-PRO
and O
optical B-PRO
properties I-PRO
of O
these O
sandwich B-DSC
films I-DSC
was O
investigated O
. O


the O
microstructures B-PRO
of O
the O
films B-DSC
were O
studied O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
. O


x-ray B-CMT
diffraction I-CMT
measurements O
indicate O
that O
the O
GZO B-MAT
layers B-DSC
in O
the O
sandwich B-DSC
films I-DSC
are O
polycrystalline B-DSC
with O
the O
OZn B-MAT
hexagonal B-SPL
structure O
and O
have O
a O
preferred O
orientation O
with O
the O
c-axis O
perpendicular O
to O
the O
substrates B-DSC
. O


for O
the O
sandwich B-DSC
film I-DSC
with O
upper O
and O
under O
GZO B-MAT
thickness O
of O
<nUm> O
and O
<nUm> O
nm O
, O
respectively O
, O
it O
owns O
the O
maximum O
figure B-PRO
of I-PRO
merit I-PRO
of O
<nUm> O
× O
10-2 O
O-1 O
with O
a O
resistivity B-PRO
of O
<nUm> O
× O
10-5 O
ocm O
and O
an O
average O
transmittance B-PRO
of O
<nUm> O
% O
. O


the O
electrical B-PRO
property I-PRO
of O
the O
sandwich B-DSC
films I-DSC
is O
improved O
by O
post O
annealing B-SMT
in O
vacuum O
. O


comparing O
with O
the O
as-deposited B-DSC
sandwich I-DSC
film I-DSC
, O
the O
film B-DSC
annealed B-SMT
in O
vacuum O
has O
a O
remarkable O
<nUm> O
% O
decrease O
in O
resistivity B-PRO
. O


the O
sandwich B-DSC
film I-DSC
annealed B-SMT
at O
the O
temperature O
of O
<nUm> O
° O
C O
in O
vacuum O
shows O
a O
sheet B-PRO
resistance I-PRO
of O
<nUm> O
Ω O
/ O
sq O
and O
a O
transmittance B-PRO
of O
<nUm> O
% O
, O
and O
the O
figure B-PRO
of I-PRO
merit I-PRO
achieved O
is O
<nUm> O
× O
10-2 O
O-1 O
. O


A O
comparative O
approach O
to O
synthesis O
and O
sintering B-SMT
of O
alumina B-MAT
/ O
yttria B-MAT
nanocomposite B-DSC
powders I-DSC
using O
different O
precipitants O


alumina B-MAT
/ O
yttria B-MAT
nanocomposite B-DSC
powder I-DSC
as O
an O
yttrium B-MAT
aluminum I-MAT
garnet B-SPL
( O
YAG B-MAT
) O
precursor O
was O
synthesized O
via O
partial B-SMT
wet I-SMT
route I-SMT
using O
urea O
and O
ammonium O
hydrogen O
carbonate O
( O
AHC O
) O
as O
precipitants O
, O
respectively O
. O


the O
products O
were O
characterized O
using O
x-ray B-CMT
diffraction I-CMT
, O
field B-CMT
- I-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
, O
fourier B-CMT
transform I-CMT
infrared I-CMT
spectroscopy I-CMT
and O
energy B-CMT
dispersive I-CMT
spectroscopy I-CMT
. O


the O
use O
of O
urea O
produced O
very O
tiny O
spherical O
Y B-MAT
- O
compounds O
with O
chemical B-PRO
composition I-PRO
of O
Y2(CO3)3*nH2O B-MAT
, O
which O
were O
attracted O
to O
the O
surface B-DSC
of O
alumina B-MAT
nanoparticles B-DSC
and O
consequently O
, O
a O
core B-PRO
- I-PRO
shell I-PRO
structure I-PRO
was O
obtained O
. O


the O
use O
of O
ammonium O
hydrogen O
carbonate O
produced O
sheets B-DSC
of O
Y B-MAT
- O
compounds O
with O
chemical B-PRO
composition I-PRO
of O
CHO4Y B-MAT
covering O
the O
alumina B-MAT
nanoparticles B-DSC
. O


A O
fine B-PRO
- I-PRO
grained I-PRO
YAG B-MAT
ceramic B-DSC
( O
about O
<nUm> O
nm O
) O
, O
presenting O
a O
non-negligible O
transparency B-PRO
( O
<nUm> O
% O
RIT B-PRO
at O
IR O
range O
) O
was O
obtained O
by O
the O
spark B-SMT
plasma I-SMT
sintering I-SMT
( O
SPS B-SMT
) O
of O
alumina B-MAT
- O
yttria B-MAT
nanocomposite B-DSC
synthesized O
in O
the O
urea O
system O
. O


this O
amount O
of O
transmission B-PRO
was O
obtained O
by O
only O
the O
sintering B-SMT
of O
the O
powder B-DSC
specimen O
without O
any O
colloidal O
forming O
process O
before O
sintering B-SMT
or O
adding O
any O
sintering B-SMT
aids O
or O
dopant O
elements O
. O


however O
, O
by O
spark B-SMT
plasma I-SMT
sintering I-SMT
of O
alumina B-MAT
- O
yttria B-MAT
nanocomposite B-DSC
powder I-DSC
synthesized O
in O
AHC B-SMT
system O
, O
an O
opaque B-PRO
YAG B-MAT
ceramic B-DSC
with O
an O
average O
grain B-PRO
size I-PRO
of O
<nUm> O
mm O
was O
obtained O
. O


influence O
of O
O2Ti B-PRO
content I-PRO
on O
the O
mechanical B-PRO
and O
tribological B-PRO
properties I-PRO
of O
Cr2O3 B-MAT
- O
based O
coating B-APL


this O
paper O
systematically O
investigated O
the O
influence O
of O
O2Ti B-PRO
content I-PRO
on O
the O
mechanical B-PRO
and O
tribological B-PRO
properties I-PRO
of O
a O
Cr2O3 B-MAT
– O
O2Ti B-MAT
composite B-DSC
coating B-APL
deposited O
by O
plasma B-SMT
spraying I-SMT
technology I-SMT
, O
and O
comparatively O
analyzed O
their O
microstructures B-PRO
and O
surface B-PRO
free I-PRO
energies I-PRO
. O


the O
results O
show O
that O
the O
Cr2O3 B-MAT
– O
O2Ti B-MAT
composite B-DSC
coating B-APL
exhibited O
a O
typical O
stratification B-PRO
and O
precipitated O
a O
new O
phase O
of O
Cr44O75Ti6 B-MAT
in O
comparison O
with O
a O
Cr2O3 B-MAT
coating B-APL
. O


the O
porosity B-PRO
of O
the O
coating B-APL
increased O
firstly O
and O
then O
decreased O
as O
the O
O2Ti B-PRO
content I-PRO
in O
the O
Cr2O3 B-MAT
– O
O2Ti B-MAT
composite B-DSC
coating B-APL
increased O
. O


furthermore O
, O
the O
O2Ti B-PRO
content I-PRO
added O
into O
the O
Cr2O3 B-MAT
– O
O2Ti B-MAT
composite B-DSC
coating B-APL
had O
an O
obvious O
influence O
on O
micro-hardness B-PRO
. O


it O
was O
also O
found O
that O
the O
friction B-PRO
coefficient I-PRO
of O
the O
coating B-APL
decreased O
as O
the O
surface B-PRO
free I-PRO
energy I-PRO
decreased O
. O


structural B-PRO
and O
elastic B-PRO
properties I-PRO
of O
cubic B-SPL
and O
hexagonal B-SPL
NTi B-MAT
and O
AlN B-MAT
from O
first B-CMT
- I-CMT
principles I-CMT
calculations I-CMT


the O
structural B-PRO
and O
elastic B-PRO
properties I-PRO
of O
NTi B-MAT
and O
AlN B-MAT
in O
both O
rock B-SPL
salt I-SPL
( O
cubic B-SPL
) O
and O
wurtzite B-SPL
( O
hexagonal B-SPL
) O
structures O
have O
been O
studied O
by O
first B-CMT
- I-CMT
principles I-CMT
calculations I-CMT
within O
the O
generalized B-CMT
gradient I-CMT
approximation I-CMT
. O


an O
efficient O
strain B-CMT
– I-CMT
stress I-CMT
method I-CMT
is O
employed O
to O
calculate O
the O
single B-DSC
crystal I-DSC
elastic B-PRO
stiffness I-PRO
constants I-PRO
. O


In O
addition O
, O
the O
elastic B-PRO
properties I-PRO
of O
polycrystalline B-DSC
aggregates O
including O
bulk B-PRO
modulus I-PRO
( O
B B-PRO
) O
, O
shear B-PRO
modulus I-PRO
( O
g B-PRO
) O
, O
poisson B-PRO
's I-PRO
ratio I-PRO
, O
and O
anisotropy B-PRO
ratio I-PRO
are O
also O
determined O
and O
compared O
with O
the O
experimental O
and O
theoretical O
results O
available O
in O
the O
literature O
. O


it O
is O
found O
that O
the O
structure B-PRO
transition I-PRO
from O
rock B-SPL
salt I-SPL
to O
wurtzite B-SPL
occurs O
at O
<nUm> O
GPa O
for O
AlN B-MAT
and O
-21.0 O
GPa O
for O
NTi B-MAT
at O
0K O
. O


the O
predicted O
elastic B-PRO
stiffness I-PRO
constants I-PRO
decrease O
with O
increasing O
volume O
except O
for O
the O
c44 B-PRO
of O
the O
wurtzite B-SPL
structure O
. O


based O
on O
the O
calculated O
B B-PRO
/ I-PRO
g I-PRO
ratios I-PRO
, O
we O
predict O
the O
ductile B-PRO
behavior I-PRO
for O
wurtzite B-SPL
NTi B-MAT
and O
the O
brittle B-PRO
nature O
for O
the O
others O
, O
i.e. O
rock B-SPL
salt I-SPL
NTi B-MAT
, O
rock B-SPL
salt I-SPL
AlN B-MAT
, O
and O
wurtzite B-SPL
AlN B-MAT
. O


we O
also O
find O
that O
rock B-SPL
salt I-SPL
NTi B-MAT
and O
wurtzite B-SPL
AlN B-MAT
are O
isotropic O
, O
while O
wurtzite B-SPL
NTi B-MAT
and O
rock B-SPL
salt I-SPL
AlN B-MAT
are O
anisotropic O
. O


an O
investigation O
of O
residual B-PRO
stresses I-PRO
in O
brazed B-SMT
cubic B-SPL
boron B-MAT
nitride I-MAT
abrasive B-PRO
grains I-PRO
by O
finite B-CMT
element I-CMT
modelling I-CMT
and O
raman B-CMT
spectroscopy I-CMT


joining B-SMT
cubic B-SPL
boron B-MAT
nitride I-MAT
( O
CBN B-MAT
) O
abrasive B-PRO
grains I-PRO
and O
tool B-APL
body I-APL
made O
of O
steel B-MAT
using O
brazing B-SMT
always O
creates O
residual B-PRO
stress I-PRO
due O
to O
thermal B-PRO
mismatch I-PRO
of O
the O
components O
when O
cooling B-SMT
down O
from O
the O
brazing B-SMT
temperature O
. O


A O
large O
tensile B-PRO
stress I-PRO
perhaps O
causes O
grain B-PRO
fracture I-PRO
during O
the O
grinding B-SMT
process O
with O
single B-DSC
- I-DSC
layer I-DSC
brazed B-SMT
CBN B-MAT
abrasive B-APL
tools I-APL
. O


to O
evaluate O
the O
residual B-PRO
stresses I-PRO
occurring O
in O
brazed B-SMT
CBN B-MAT
grains B-DSC
, O
values O
and O
distribution O
of O
residual B-PRO
stresses I-PRO
are O
calculated O
using O
the O
finite B-CMT
element I-CMT
method I-CMT
. O


effects O
of O
bonding O
materials O
, O
embedding B-PRO
depth I-PRO
, O
gap B-PRO
thickness I-PRO
and O
grain B-PRO
size I-PRO
on O
brazing B-SMT
- O
induced O
residual B-PRO
stresses I-PRO
are O
discussed O
. O


results O
show O
that O
the O
Cu B-MAT
– I-MAT
Sn I-MAT
– I-MAT
Ti I-MAT
bonding O
alloy O
always O
results O
in O
a O
larger O
tensile O
stress O
in O
the O
CBN B-MAT
grains O
, O
when O
compared O
to O
Ag B-MAT
– I-MAT
Cu I-MAT
– I-MAT
Ti I-MAT
alloy B-DSC
during O
the O
cooling B-SMT
phase O
of O
the O
brazing B-SMT
process O
. O


the O
maximum O
tensile B-PRO
stress I-PRO
is O
obtained B-DSC
at O
the O
grain O
– O
bond O
junction O
region O
irrespective O
of O
the O
choice O
of O
bonding O
material O
and O
embedding B-PRO
depth I-PRO
. O


when O
the O
grain B-PRO
side I-PRO
length I-PRO
is O
<nUm> O
mm O
, O
gap B-PRO
thickness I-PRO
is O
<nUm> O
mm O
and O
grain B-PRO
embedding I-PRO
depth I-PRO
is O
<nUm> O
% O
, O
the O
maximum O
magnitude O
of O
the O
tensile B-PRO
stresses I-PRO
is O
obtained O
. O


the O
maximum O
stress B-PRO
is O
<nUm> O
MPa O
with O
Ag B-MAT
– I-MAT
Cu I-MAT
– I-MAT
Ti I-MAT
alloy B-DSC
and O
<nUm> O
MPa O
with O
Cu B-MAT
– I-MAT
Sn I-MAT
– I-MAT
Ti I-MAT
alloy B-DSC
. O


the O
brazing B-SMT
- O
induced O
residual B-PRO
stresses I-PRO
have O
been O
finally O
measured O
experimentally O
by O
means O
of O
the O
raman B-CMT
spectroscopy I-CMT
. O


the O
current O
simulated O
results O
are O
accordingly O
verified O
valid O
. O


mechanosynthesis B-SMT
and O
structural B-CMT
characterization I-CMT
of O
nanocrystalline B-DSC
ce1 B-MAT
– I-MAT
x I-MAT
Y I-MAT
x I-MAT
O I-MAT
– I-MAT
δ I-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
– I-MAT
<nUm> I-MAT
) I-MAT
solid B-DSC
solutions I-DSC


A O
series O
of O
nanostructured B-DSC
fluorite B-SPL
- O
type O
ce1 B-MAT
– I-MAT
xYxO2 I-MAT
– I-MAT
δ I-MAT
( I-MAT
<nUm> I-MAT
≤ I-MAT
x I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT
solid B-DSC
solutions I-DSC
, O
prepared O
via O
high B-SMT
- I-SMT
energy I-SMT
milling I-SMT
of O
the O
CeO2 B-MAT
/ O
O3Y2 B-MAT
mixtures O
, O
are O
investigated O
by O
XRD B-CMT
, O
HR B-CMT
- I-CMT
TEM I-CMT
, O
EDS B-CMT
and O
raman B-CMT
spectroscopy I-CMT
. O


for O
the O
first O
time O
, O
complementary O
information O
on O
both O
the O
long O
- O
range O
and O
short B-PRO
- I-PRO
range I-PRO
structural I-PRO
features I-PRO
of O
mechanosynthesized B-SMT
ce1 B-MAT
– I-MAT
xYxO2 I-MAT
– I-MAT
δ I-MAT
, O
obtained O
by O
rietveld B-CMT
analysis I-CMT
of O
XRD B-CMT
data O
and O
raman B-CMT
spectroscopy I-CMT
, O
is O
provided O
. O


the O
lattice B-PRO
parameters I-PRO
of O
the O
as-prepared B-DSC
solid I-DSC
solutions I-DSC
decrease O
with O
increasing O
yttrium B-MAT
content O
. O


rietveld B-CMT
refinements I-CMT
of O
the O
XRD B-CMT
data O
reveal O
increase O
in O
microstrains B-PRO
in O
the O
host O
ceria B-MAT
lattice O
as O
a O
consequence O
of O
yttrium B-MAT
incorporation O
. O


raman B-CMT
spectra O
are O
directly O
affected O
by O
the O
presence O
of O
oxygen B-PRO
vacancies I-PRO
; O
their O
existence O
is O
evidenced O
by O
the O
presence O
of O
vibration B-PRO
modes I-PRO
at O
~ O
<nUm> O
and O
~ O
<nUm> O
cm O
– O
<nUm> O
. O


the O
detailed O
spectroscopic O
investigations O
enable O
us O
to O
separate O
extrinsic O
and O
intrinsic O
origin O
of O
oxygen B-PRO
vacancies I-PRO
. O


it O
is O
demonstrated O
that O
mechanosynthesis B-SMT
can O
be O
successfully O
employed O
in O
the O
one O
- O
step O
preparation O
of O
nanocrystalline B-DSC
ce1 B-MAT
– I-MAT
xYxO2 I-MAT
– I-MAT
δ I-MAT
solid B-DSC
solutions I-DSC
. O


investigation O
of O
grain B-PRO
- I-PRO
boundary I-PRO
geometry I-PRO
and O
pores B-PRO
morphology I-PRO
in O
dense B-PRO
and O
porous B-DSC
cubic B-SPL
zirconia B-MAT
polycrystals B-DSC


three B-CMT
- I-CMT
dimensional I-CMT
electron I-CMT
backscatter I-CMT
diffraction I-CMT
technique O
was O
used O
for O
the O
visualization O
of O
grain B-PRO
boundary I-PRO
geometry I-PRO
and O
pore B-PRO
morphology I-PRO
in O
cubic B-SPL
zirconia B-MAT
. O


A O
set O
of O
four O
samples O
sintered B-SMT
under O
different O
conditions O
was O
investigated O
. O


specimens O
which O
were O
characterized O
by O
energy B-CMT
dispersive I-CMT
spectroscopy I-CMT
and O
x-ray B-CMT
diffraction I-CMT
were O
entirely O
composed O
of O
cubic B-SPL
phase O
. O


investigations O
of O
boundaries B-PRO
and O
pore B-PRO
structures I-PRO
were O
carried O
out O
in O
a O
dual B-CMT
- I-CMT
beam I-CMT
scanning I-CMT
electron I-CMT
microscope I-CMT
. O


for O
each O
sample O
, O
a O
volume O
of O
<nUm> O
mm3 O
was O
investigated O
. O


the O
analysis O
of O
grain B-PRO
boundary I-PRO
networks O
reconstructed O
from O
inverse B-CMT
pole I-CMT
figure I-CMT
maps I-CMT
revealed O
a O
strong O
dependence O
between O
grain B-PRO
boundary I-PRO
density I-PRO
and O
sample O
preparation O
parameters O
. O


sintering B-SMT
also O
affects O
the O
size O
and O
distribution O
of O
pores O
. O


the O
total O
number O
of O
grains O
analyzed O
varied O
from O
<nUm> O
to O
<nUm> O
and O
the O
calculated O
volume O
of O
cavities O
from O
<nUm> O
% O
to O
<nUm> O
% O
. O


this O
paper O
shows O
the O
application O
of O
three B-CMT
- I-CMT
dimensional I-CMT
crystallographic I-CMT
orientation I-CMT
analysis I-CMT
to O
characterize O
the O
microstructure B-PRO
of O
yttria B-MAT
stabilized B-DSC
zirconia B-MAT
ceramics B-DSC
. O


UV B-PRO
luminescence I-PRO
from O
FLi B-MAT
/ O
carbon B-MAT
nanotube I-MAT
microcomposites B-DSC


In O
this O
work O
we O
perform O
a O
study O
on O
growth O
and O
characterization O
of O
FLi B-MAT
/ O
carbon B-MAT
nanotube I-MAT
( O
CNT B-MAT
) O
composites B-DSC
. O


the O
composite B-DSC
was O
prepared O
with O
chemical B-CMT
mix I-CMT
techniques I-CMT
and O
then O
characterized O
with O
SEM B-CMT
analysis O
, O
auger B-CMT
electron I-CMT
spectroscopy I-CMT
( O
AES B-CMT
) O
and O
cathodoluminescence B-CMT
( O
CL B-CMT
) O
spectroscopy O
. O


the O
obtained O
samples O
, O
as O
it O
can O
be O
seen O
in O
SEM B-CMT
images O
, O
are O
formed O
by O
carbon B-MAT
nanotubes B-DSC
overlapping O
FLi B-MAT
micrometric B-DSC
crystals I-DSC
. O


AES B-CMT
spectroscopy O
shows O
the O
presence O
of O
chemical O
bonds O
between O
FLi B-MAT
and O
CNT B-MAT
and O
a O
good O
homogeneity O
in O
all O
the O
prepared O
samples O
. O


finally O
CL B-CMT
studies O
indicate O
a O
UV B-PRO
luminescence I-PRO
signal O
centered O
at O
about O
<nUm> O
nm O
, O
with O
a O
FWHM O
of O
about O
<nUm> O
nm O
. O


these O
results O
may O
allow O
the O
possible O
use O
of O
this O
composite B-DSC
as O
UV B-APL
emitters I-APL
or O
micro-tunable B-APL
laser I-APL
devices I-APL
. O


microstructures B-PRO
and O
electrical B-PRO
responses I-PRO
of O
pure B-DSC
and O
chromium B-MAT
- O
doped B-DSC
CaCu3O12Ti4 B-MAT
ceramics B-DSC


pure B-DSC
and O
chromium B-MAT
- O
doped B-DSC
CCTO B-MAT
( O
CaCu3O12Ti4 B-MAT
) O
ceramics B-DSC
were O
prepared O
by O
a O
conventional O
solid B-SMT
- I-SMT
state I-SMT
reaction I-SMT
method I-SMT
, O
and O
the O
effects O
of O
chromium B-MAT
doping B-SMT
on O
the O
microstructures B-PRO
and O
electrical B-PRO
properties I-PRO
of O
these O
ceramics B-DSC
were O
investigated O
. O


efficient O
crystalline B-DSC
phase O
formation O
accompanied O
by O
dopant O
- O
induced O
lattice B-PRO
constant I-PRO
expansion I-PRO
was O
confirmed O
through O
x-ray B-CMT
diffraction I-CMT
studies O
. O


scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
results O
show O
that O
doping O
effectively O
enhanced O
grain O
growth O
or O
densification B-SMT
, O
which O
should O
increase O
the O
complex B-PRO
permittivity I-PRO
. O


the O
dielectric B-PRO
constant I-PRO
reached O
a O
value O
as O
high O
as O
<nUm> O
( O
at O
1kHz O
) O
at O
a O
chromium B-PRO
- I-PRO
doping I-PRO
concentration I-PRO
of O
<nUm> O
% O
. O


the O
electrical B-PRO
relaxation I-PRO
and O
dc B-PRO
conductivity I-PRO
of O
the O
pure B-DSC
and O
chromium B-MAT
- O
doped B-DSC
CCTO B-MAT
ceramics B-DSC
were O
measured O
in O
the O
<nUm> O
– O
500K O
temperature O
range O
, O
and O
the O
electrical B-CMT
data I-CMT
were O
analyzed O
in O
the O
framework O
of O
the O
dielectric B-PRO
as O
well O
as O
the O
electric B-PRO
modulus I-PRO
formalisms O
. O


the O
obtained O
activation B-PRO
energy I-PRO
associated O
with O
the O
electrical B-PRO
relaxation I-PRO
, O
determined O
from O
the O
electric B-PRO
modulus I-PRO
spectra O
, O
was O
<nUm> O
– O
<nUm> O
eV O
, O
which O
was O
very O
close O
to O
the O
value O
of O
the O
activation B-PRO
energy I-PRO
for O
dc B-PRO
conductivity I-PRO
( O
<nUm> O
± O
<nUm> O
eV O
) O
. O


these O
results O
suggest O
that O
the O
movement O
of O
oxygen B-PRO
vacancies I-PRO
at O
the O
grain B-PRO
boundaries I-PRO
is O
responsible O
for O
both O
the O
conduction O
and O
relaxation O
processes O
. O


the O
short O
- O
range O
hopping O
of O
oxygen B-PRO
vacancies I-PRO
as O
“ O
polarons O
” O
is O
similar O
to O
the O
reorientation O
of O
the O
dipole O
and O
leads O
to O
dielectric B-PRO
relaxation I-PRO
. O


the O
proposed O
explanation O
of O
the O
electric B-PRO
properties I-PRO
of O
pure B-DSC
and O
chromium B-MAT
- O
doped B-DSC
CCTO B-MAT
ceramics B-DSC
is O
supported O
by O
the O
data O
from O
the O
impedance B-PRO
spectrum O
. O


low O
- O
temperature O
hydrothermal B-SMT
synthesis I-SMT
of O
highly O
photoactive B-PRO
mesoporous B-DSC
spherical I-DSC
O2Ti B-MAT
nanocrystalline B-DSC


O2Ti B-MAT
microspheres B-DSC
with O
mesoporous B-DSC
textural O
microstructures B-PRO
and O
high O
photocatalytic B-PRO
activity I-PRO
were O
prepared O
by O
hydrothermal B-SMT
treatment I-SMT
of O
mixed O
solution O
of O
titanium B-MAT
sulfate I-MAT
and O
urea O
with O
designed O
time O
. O


the O
prepared O
samples O
were O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
and O
N B-CMT
adsorption I-CMT
– I-CMT
desorption I-CMT
measurements I-CMT
. O


the O
photocatalytic B-PRO
activity I-PRO
was O
evaluated O
via O
the O
photocatalytic B-APL
oxidation I-APL
of O
acetone O
in O
air O
at O
room O
temperature O
. O


the O
results O
show O
that O
the O
hydrothermal B-SMT
time O
significantly O
influences O
on O
the O
morphology B-PRO
, O
microstructure B-PRO
and O
photocatalytic B-PRO
activity I-PRO
of O
the O
as-prepared B-DSC
samples O
. O


with O
increasing O
hydrothermal B-SMT
time O
, O
specific B-PRO
surface I-PRO
areas I-PRO
and O
pore B-PRO
volumes I-PRO
decrease O
, O
contrarily O
, O
the O
crystallite B-PRO
size I-PRO
and O
relative O
anatase B-SPL
crystallinity B-PRO
increase O
. O


the O
photocatalytic B-PRO
efficiency I-PRO
of O
the O
as-prepared B-DSC
samples O
is O
obviously O
higher O
than O
that O
of O
commercial O
degussa B-MAT
P25 I-MAT
( O
P25 B-MAT
) O
powders B-DSC
. O


especially O
, O
the O
as-prepared B-DSC
O2Ti B-MAT
powders B-DSC
by O
hydrothermal B-SMT
treatment I-SMT
for O
7h O
shows O
the O
highest O
photocatalytic B-PRO
activity I-PRO
, O
which O
exceeds O
that O
of O
P25 B-MAT
by O
a O
factor O
of O
more O
than O
<nUm> O
times O
. O


mossbauer B-CMT
study O
of O
Fe B-MAT
- O
doped B-DSC
BaO3Ti B-MAT
of O
different O
grain B-PRO
sizes I-PRO
induced O
by O
ball B-SMT
mill I-SMT
technique I-SMT


Fe B-MAT
- O
doped B-DSC
BaO3Ti B-MAT
has O
been O
prepared O
by O
the O
solid B-SMT
state I-SMT
reaction I-SMT
method I-SMT
. O


nanonization O
of O
sample O
has O
been O
achieved O
by O
using O
high B-SMT
energy I-SMT
ball I-SMT
milling I-SMT
. O


tetragonal B-SPL
phase O
along O
with O
a O
small O
amount O
of O
hexagonal B-SPL
phase O
has O
been O
identified O
by O
room O
temperature O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
technique O
in O
all O
the O
samples O
. O


mossbauer B-CMT
spectrum O
of O
the O
as-prepared B-DSC
sample O
shows O
multi-site O
substitution O
of O
Fe B-MAT
atoms O
. O


magnetic B-PRO
interactions I-PRO
between O
Fe B-MAT
atoms O
placed O
at O
three O
different O
configurations O
have O
been O
evidenced O
by O
the O
presence O
of O
three O
sextets O
. O


A O
doublet O
pattern O
has O
also O
been O
observed O
for O
Fe B-MAT
atoms O
situated O
in O
isolate O
manner O
without O
any O
magnetic B-PRO
exchange I-PRO
. O


suppression O
of O
sextet O
patterns O
in O
milled B-SMT
samples O
has O
been O
attributed O
to O
the O
presence O
of O
superparamagnetism B-PRO
. O


effect O
of O
silver B-MAT
doping B-SMT
on O
the O
electrical B-PRO
properties I-PRO
of O
a-Sb2Se3 B-MAT


this O
paper O
reports O
the O
effect O
of O
Ag B-MAT
- O
doping B-SMT
on O
electrical B-PRO
properties I-PRO
of O
a-Sb2Se3 B-MAT
in O
the O
temperature O
range O
<nUm> O
– O
340K O
and O
frequency O
range O
<nUm> O
– O
100kHz O
. O


the O
variation O
of O
transport B-PRO
properties I-PRO
with O
thermal B-SMT
doping I-SMT
has O
been O
studied O
. O


Ag B-MAT
- O
doping B-SMT
produces O
two O
homogeneous O
phases O
in O
the O
sample O
, O
which O
are O
found O
to O
be O
voltage O
dependent O
in O
the O
temperature O
range O
studied O
and O
frequency O
dependent O
in O
lower O
frequency O
region O
( O
<nUm> O
– O
10kHz O
) O
. O


activation B-PRO
energy I-PRO
eg I-PRO
and O
C' B-PRO
[ O
= O
s0 B-PRO
exp O
( O
γ B-PRO
/ O
k B-PRO
) O
, O
where O
γ B-PRO
, O
is O
the O
temperature B-PRO
coefficient I-PRO
of O
the O
band B-PRO
gap I-PRO
] O
calculated O
from O
dc B-PRO
conductivity I-PRO
has O
been O
found O
to O
vary O
from O
( O
<nUm> O
± O
<nUm> O
eV O
to O
( O
<nUm> O
± O
<nUm> O
eV O
and O
( O
<nUm> O
± O
<nUm> O
) O
× O
<nUm> O
− O
<nUm> O
to O
( O
<nUm> O
± O
<nUm> O
) O
× O
10-6 O
o-1cm-1 O
respectively O
. O


Ag B-MAT
- O
doping B-SMT
can O
be O
used O
to O
make O
the O
sample O
useful O
in O
device B-APL
applications I-APL
. O


ellipsometric B-CMT
, O
XPS B-CMT
and O
FTIR B-CMT
study O
on O
CNSi B-MAT
films B-DSC
deposited O
by O
hot B-SMT
- I-SMT
wire I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
method O


CNSi B-MAT
films B-DSC
were O
deposited O
by O
hot B-SMT
- I-SMT
wire I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
( O
HWCVD B-SMT
) O
method O
using O
hexamethyldisilazane O
( O
HMDS O
) O
. O


these O
films B-DSC
contain O
a O
lot O
of O
oxygen O
. O


using O
HMDS O
with O
H3N O
, O
low O
oxygen O
content O
films B-DSC
can O
be O
obtained O
. O


it O
is O
found O
from O
the O
structure B-PRO
determination O
that O
Si-N O
bonds O
are O
the O
vital O
bonds O
of O
CNSi B-MAT
films B-DSC
. O


it O
is O
also O
found O
that O
the O
highest O
amount O
of O
Si-N O
bonds O
content O
CNSi B-MAT
has O
the O
highest O
amount O
of O
nitrogen O
and O
the O
amount O
of O
nitrogen O
is O
directly O
related O
to O
the O
properties O
of O
the O
films B-DSC
. O


the O
amount O
of O
oxygen O
, O
film B-DSC
density B-PRO
, O
the O
refractive B-PRO
index I-PRO
and O
optical B-PRO
band I-PRO
gap I-PRO
are O
strong O
functions O
of O
the O
amount O
of O
nitrogen O
in O
the O
films B-DSC
. O


with O
increasing O
nitrogen O
, O
the O
amount O
of O
oxygen O
decreases O
and O
with O
decreasing O
nitrogen O
, O
the O
amount O
of O
oxygen O
increases O
. O


the O
film B-DSC
density B-PRO
and O
optical B-PRO
band I-PRO
gap I-PRO
also O
increase O
with O
increasing O
nitrogen O
. O


on O
the O
other O
hand O
with O
increasing O
nitrogen O
, O
the O
refractive B-PRO
index I-PRO
decreases O
. O


the O
effect O
of O
MC B-MAT
and O
MN B-MAT
stabilizer B-APL
additions O
on O
the O
creep B-PRO
rupture I-PRO
properties I-PRO
of O
helium B-SMT
implanted I-SMT
fe-25 B-MAT
% I-MAT
ni-15 I-MAT
% I-MAT
Cr I-MAT
austenitic B-SPL
alloy B-DSC


helium B-PRO
embrittlement I-PRO
resistance I-PRO
of O
fe-25 B-MAT
% I-MAT
ni-15 I-MAT
% I-MAT
Cr I-MAT
austenitic B-SPL
alloys B-DSC
with O
various O
MX B-MAT
( I-MAT
m I-MAT
= I-MAT
V I-MAT
, I-MAT
Ti I-MAT
, I-MAT
Nb I-MAT
, I-MAT
Zr I-MAT
; I-MAT
x I-MAT
= I-MAT
C I-MAT
, I-MAT
N I-MAT
) I-MAT
stabilizers B-APL
was O
compared O
through O
post O
helium B-SMT
implantation I-SMT
creep B-CMT
testing I-CMT
at O
<nUm> O
K O
. O


while O
significant O
deterioration O
by O
helium O
in O
terms O
of O
creep B-PRO
rupture I-PRO
time I-PRO
and O
elongation B-PRO
occurred O
for O
all O
materials O
investigated O
, O
the O
suppression O
of O
the O
deterioration O
, O
especially O
in O
rupture B-PRO
time I-PRO
, O
was O
discerned O
for O
the O
materials O
in O
which O
semi-coherent O
MC B-MAT
( I-MAT
m I-MAT
= I-MAT
Ti I-MAT
, I-MAT
Ti I-MAT
+ I-MAT
Nb I-MAT
, I-MAT
V I-MAT
+ I-MAT
Ti I-MAT
) I-MAT
particles B-DSC
were O
distributed O
at O
high O
density O
. O


the O
material O
which O
contains O
the O
incoherent O
M23C6 B-MAT
as O
predominant O
precipitates O
seems O
to O
be O
less O
degraded O
by O
helium O
than O
those O
containing O
the O
MXs B-MAT
( I-MAT
m I-MAT
= I-MAT
Zr I-MAT
, I-MAT
V I-MAT
; I-MAT
x I-MAT
= I-MAT
C I-MAT
, I-MAT
N I-MAT
) I-MAT
, O
if O
compared O
at O
the O
same O
number B-PRO
density I-PRO
of I-PRO
precipitates I-PRO
. O


therefore O
, O
it O
is O
suggested O
that O
the O
high O
density B-PRO
dispersion I-PRO
of O
incoherent O
M23C6 B-MAT
as O
well O
as O
semi-coherent O
Ti B-MAT
containing O
MC B-MAT
particles B-DSC
would O
be O
beneficial O
in O
reducing O
the O
detrimental O
helium O
influences O
on O
mechanical B-PRO
properties I-PRO
. O


surfactant B-SMT
- I-SMT
assisted I-SMT
synthesis I-SMT
of O
mesoporous B-DSC
silica B-MAT
/ O
ceria B-MAT
– O
silica B-MAT
composites B-DSC
with O
high O
cerium B-MAT
content O
under O
basic O
conditions O


ordered O
mesoporous B-DSC
silica B-MAT
/ O
ceria B-MAT
– O
silica B-MAT
composites B-DSC
were O
synthesized O
using O
cerium(IV) O
hydroxide O
and O
tetraethyl O
orthosilicate O
( O
TEOS O
) O
as O
co-precursors O
in O
the O
presence O
of O
hexadecyltrimethylammonium O
bromide O
( O
CTAB O
) O
under O
basic O
conditions O
. O


these O
composites B-DSC
consisted O
of O
Ce B-MAT
- O
doped B-DSC
mesoporous I-DSC
silica B-MAT
particles B-DSC
( O
about O
<nUm> O
nm O
) O
with O
highly O
ordered O
2D B-DSC
hexagonal B-SPL
( O
p6mm B-SPL
) O
and B-CMT
3D B-DSC
bicontinuous O
cubic B-SPL
( O
ia3d B-SPL
) O
structures B-PRO
and O
irregular O
ceria B-MAT
- O
rich O
silica B-MAT
– O
ceria B-MAT
particles B-DSC
. O


wide B-CMT
angle I-CMT
XRD I-CMT
, O
diffuse B-CMT
reflectance I-CMT
UV I-CMT
- I-CMT
vis I-CMT
, O
and O
XPS B-CMT
analyses O
showed O
that O
<nUm> O
– O
<nUm> O
% O
of O
cerium B-MAT
was O
at O
the O
ce3+ O
oxidation O
level O
and O
the O
remaining O
predominant O
fraction O
of O
Ce B-MAT
was O
at O
the O
ce4+ O
oxidation O
level O
. O


the O
cerium B-MAT
loading O
was O
varied O
in O
these O
composite B-DSC
materials O
up O
to O
<nUm> O
wt O
% O
( O
∼ O
<nUm> O
mmol O
g-1 O
) O
. O


the O
specific B-PRO
surface I-PRO
areas I-PRO
of O
the O
mesoporous B-DSC
silica B-MAT
/ O
ceria B-MAT
– I-MAT
silica I-MAT
composite B-DSC
samples O
obtained O
on O
the O
basis O
of O
nitrogen B-CMT
adsorption I-CMT
isotherms I-CMT
were O
higher O
than O
<nUm> O
m2 O
g-1 O
and O
their O
pore B-PRO
widths I-PRO
were O
between O
<nUm> O
and O
<nUm> O
nm O
. O


the O
mesoporous B-DSC
silica B-MAT
/ O
ceria B-MAT
– I-MAT
silica I-MAT
samples O
were O
reduced O
at O
<nUm> O
° O
C O
under O
flowing O
H O
in O
a O
N O
environment O
. O


the O
crystal B-PRO
structure I-PRO
of O
the O
reduced O
samples O
changed O
to O
a O
hexagonally B-SPL
structured O
phase O
with O
the O
oxidation O
state O
of O
ce3+ O
, O
while O
the O
ordered O
mesostructure B-PRO
of O
silica B-MAT
was O
preserved O
. O


Mn B-MAT
segregation O
dependence O
of O
damping B-PRO
capacity I-PRO
of O
as-cast B-DSC
M2052 B-MAT
alloy B-DSC


In O
this O
paper O
, O
three O
types O
of O
sand B-SMT
- I-SMT
casting I-SMT
M2052 B-MAT
alloys B-DSC
subjected O
to O
different O
heat B-SMT
treatments I-SMT
have O
been O
designed O
and O
prepared O
in O
order O
to O
investigate O
the O
relationship O
between O
Mn B-MAT
segregation O
and O
damping B-PRO
capacity I-PRO
using O
dynamic B-CMT
mechanical I-CMT
analysis I-CMT
, O
optical B-CMT
microscopy I-CMT
, O
x-ray B-CMT
diffraction I-CMT
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
, O
and O
energy B-CMT
dispersive I-CMT
spectroscopy I-CMT
. O


the O
results O
show O
that O
damping B-PRO
capacity I-PRO
has O
a O
crucial O
dependence O
on O
the O
Mn B-MAT
segregation O
in O
as-cast B-DSC
M2052 B-MAT
alloy B-DSC
. O


the O
original O
as-cast B-DSC
alloy I-DSC
without O
subsequent O
heat B-SMT
treatment I-SMT
shows O
its O
internal B-PRO
friction I-PRO
( O
Q-1 B-PRO
) O
is O
<nUm> O
× O
<nUm> O
− O
<nUm> O
at O
a O
strain O
amplitude O
of O
γ O
= O
<nUm> O
× O
<nUm> O
− O
<nUm> O
, O
while O
a O
remarkable O
enhancement O
( O
<nUm> O
× O
<nUm> O
− O
<nUm> O
) O
of O
Q-1 B-PRO
can O
be O
obtained O
by O
ageing B-SMT
of O
the O
as-cast B-DSC
alloy I-DSC
at O
<nUm> O
° O
C O
for O
4h O
. O


this O
is O
mainly O
ascribed O
to O
the O
further O
formation O
of O
nanoscale B-DSC
Mn B-MAT
segregation O
in O
the O
Mn B-MAT
dendrites B-DSC
( O
so O
- O
called O
Mn B-MAT
macrosegregation O
) O
by O
spinodal B-SMT
decomposition I-SMT
during O
the O
ageing B-SMT
. O


on O
the O
contrary O
, O
performing O
the O
additional O
homogenization B-SMT
treatment I-SMT
at O
<nUm> O
° O
C O
for O
24h O
prior O
to O
the O
ageing B-SMT
at O
<nUm> O
° O
C O
for O
4h O
for O
the O
as-cast B-DSC
M2052 B-MAT
alloy B-DSC
can O
result O
in O
the O
obvious O
reduction O
of O
damping B-PRO
capacity I-PRO
( O
only O
<nUm> O
× O
<nUm> O
− O
<nUm> O
for O
Q-1 B-PRO
) O
, O
which O
is O
closely O
associated O
with O
the O
distinct O
decrement O
of O
lattice B-PRO
distortion I-PRO
of O
g'-Mn B-MAT
during O
f.c.c B-SPL
- O
f.c.t B-SPL
phase B-PRO
transformation I-PRO
caused O
by O
weakening O
of O
Mn B-MAT
segregation O
at O
the O
macro O
/ O
nano-scale O
. O


metal B-PRO
properties I-PRO
and O
thin B-DSC
film I-DSC
oxidation B-SMT


the O
dependence O
of O
thin B-DSC
film I-DSC
oxidation B-PRO
rates I-PRO
on O
the O
metal B-PRO
properties I-PRO
is O
discussed O
in O
terms O
of O
a O
surface B-PRO
state I-PRO
charge I-PRO
at O
the O
metal B-PRO
- O
oxide B-MAT
interface B-DSC
and O
a O
space B-PRO
charge I-PRO
layer I-PRO
in O
the O
growing O
oxide B-MAT
. O


the O
properties O
considered O
are O
the O
magnetic B-PRO
change O
at O
the O
curie B-PRO
temperature I-PRO
, O
allotropic B-PRO
transformation I-PRO
and O
crystal B-PRO
orientation I-PRO
of O
the O
metal B-PRO
substrate B-DSC
. O


experimental O
data O
on O
the O
direct O
logarithmic O
oxidation B-SMT
of O
iron B-MAT
, O
nickel B-MAT
, O
cobalt B-MAT
and O
copper B-MAT
forming O
p B-PRO
- I-PRO
type I-PRO
semiconducting I-PRO
oxides B-MAT
are O
analysed O
. O


ab B-CMT
initio I-CMT
investigations O
of O
the O
electronic B-PRO
and O
magnetic B-PRO
structures I-PRO
of O
CoH B-MAT
and O
CoH2 B-MAT


first B-CMT
principles I-CMT
investigation O
of O
the O
structural B-PRO
, O
electronic B-PRO
and O
magnetic B-PRO
properties I-PRO
study O
of O
cobalt B-MAT
and O
the O
hydrides B-MAT
CoHx I-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
) I-MAT
show O
significant O
volume B-PRO
expansion I-PRO
effect I-PRO
versus O
Co B-MAT
– O
H O
bonding O
. O


As O
hydrogen O
is O
incorporated O
in O
the O
cobalt B-MAT
lattice O
, O
the O
density B-PRO
of I-PRO
states I-PRO
undergoes O
gradual O
modifications O
within O
the O
valence B-PRO
band I-PRO
and O
particularly O
near O
the O
fermi B-PRO
level I-PRO
. O


A O
resulting O
strong O
reduction O
of O
magnetization B-PRO
characterizes O
the O
dihydride B-MAT
whereas O
the O
monohydride B-MAT
is O
revealed O
as O
a O
strong O
ferromagnet B-PRO
, O
like O
co. B-MAT


synthesis O
and O
electrochemical B-PRO
properties I-PRO
of O
nanorod B-DSC
- I-DSC
shaped I-DSC
Li2Mn3NiO8 B-MAT
cathode B-APL
materials O
for O
lithium B-APL
- I-APL
ion I-APL
batteries I-APL


nanorod B-DSC
- I-DSC
shaped I-DSC
Li2Mn3NiO8 B-MAT
cathode B-APL
powders B-DSC
were O
synthesized O
by O
a O
co-precipitation B-SMT
method I-SMT
with O
oxalic O
acid O
. O


their O
structures B-PRO
and O
electrochemical B-PRO
properties I-PRO
were O
characterized O
by O
SEM B-CMT
, O
XRD B-CMT
and O
galvanostatic B-CMT
charge I-CMT
– I-CMT
discharge I-CMT
tests I-CMT
. O


the O
resulting O
nanorod B-DSC
- O
shaped O
Li2Mn3NiO8 B-MAT
cathode B-APL
active O
materials O
delivered O
a O
specific O
discharge B-PRO
capacity I-PRO
of O
<nUm> O
mAhg-1 O
at O
0.1C O
rate O
. O


these O
active O
materials O
exhibited O
better O
capacity B-PRO
retention I-PRO
and O
higher O
rate B-PRO
performance I-PRO
than O
those O
of O
Li2Mn3NiO8 B-MAT
cathode B-APL
powders B-DSC
with O
irregular O
morphology B-PRO
. O


thermoelectrics B-PRO
with O
earth O
abundant O
elements O
: O
low O
thermal B-PRO
conductivity I-PRO
and O
high O
thermopower B-PRO
in O
doped B-DSC
SSn B-MAT


the O
thermoelectric B-PRO
properties I-PRO
of O
Ag B-MAT
- O
doped B-DSC
SSn B-MAT
samples O
synthesized O
by O
mechanical B-SMT
alloying I-SMT
followed O
by O
spark B-SMT
plasma I-SMT
sintering I-SMT
were O
studied O
. O


we O
report O
that O
SSn B-MAT
possesses O
a O
high O
seebeck B-PRO
coefficient I-PRO
of O
> O
+ O
<nUm> O
mV O
K-1 O
and O
Ag B-MAT
doping B-SMT
increases O
the O
carrier B-PRO
concentration I-PRO
by O
more O
than O
four O
orders O
of O
magnitude O
giving O
significantly O
improving O
electrical B-PRO
conductivity I-PRO
. O


the O
thermal B-PRO
conductivity I-PRO
falls O
below O
<nUm> O
W O
m-1 O
K-1 O
at O
<nUm> O
K O
and O
leads O
to O
a O
high O
ZT B-PRO
of O
<nUm> O
. O


the O
data O
indicate O
that O
earth O
- O
abundant O
and O
environmentally O
friendly O
SSn B-MAT
is O
a O
promising O
candidate O
for O
thermoelectric B-APL
applications I-APL
despite O
its O
relatively O
wide O
bandgap B-PRO
of O
<nUm> O
eV O
. O


layer B-DSC
structured I-DSC
calcium B-MAT
bismuth I-MAT
titanate I-MAT
by O
mechanical B-SMT
activation I-SMT


nanocrystalline B-DSC
calcium B-MAT
bismuth I-MAT
titanate I-MAT
( O
Bi4CaO15Ti4 B-MAT
) O
, O
which O
exhibits O
a O
layer B-PRO
structure I-PRO
, O
has O
been O
successfully O
synthesized O
by O
mechanical B-SMT
activation I-SMT
of O
mixed O
oxides B-MAT
of O
CaO B-MAT
, O
Bi2O3 B-MAT
and O
O2Ti B-MAT
for O
<nUm> O
h O
in O
a O
nitrogen O
atmosphere O
at O
room O
temperature O
, O
and O
therefore O
, O
the O
phase O
- O
forming O
calcinations B-SMT
that O
is O
always O
requested O
at O
an O
elevated O
temperature O
is O
skipped O
. O


the O
resulting O
Bi4CaO15Ti4 B-MAT
phase O
is O
composed O
of O
fine O
particles B-DSC
of O
about O
<nUm> O
nm O
in O
size O
. O


it O
was O
sintered B-SMT
to O
a O
density B-PRO
of O
<nUm> O
% O
theoretical O
density O
at O
<nUm> O
° O
C O
for O
<nUm> O
h O
. O


sintered B-SMT
Bi4CaO15Ti4 B-MAT
exhibits O
a O
maximum O
dielectric B-PRO
constant I-PRO
of O
<nUm> O
at O
the O
curie B-PRO
point I-PRO
of O
<nUm> O
° O
C O
, O
when O
measured O
at O
<nUm> O
MHz O
. O


effect O
of O
equal B-SMT
- I-SMT
channel I-SMT
angular I-SMT
pressing I-SMT
on O
pitting B-PRO
corrosion I-PRO
resistance I-PRO
of O
anodized B-SMT
aluminum B-MAT
- I-MAT
copper I-MAT
alloy B-DSC


the O
effect O
of O
equal B-SMT
- I-SMT
channel I-SMT
angular I-SMT
pressing(ECAP) I-SMT
on O
the O
pitting B-PRO
corrosion I-PRO
resistance I-PRO
of O
anodized B-SMT
Al-Cu B-MAT
alloy B-DSC
was O
investigated O
by O
electrochemical B-CMT
techniques I-CMT
in O
a O
solution O
containing O
<nUm> O
mol O
/ O
L O
AlCl3 O
and O
also O
by O
surface B-CMT
analysis I-CMT
. O


anodizing B-SMT
was O
conducted O
for O
<nUm> O
min O
at O
<nUm> O
and O
<nUm> O
A O
/ O
m2 O
in O
a O
solution O
containing O
<nUm> O
mol O
/ O
L O
H2O4S O
and O
<nUm> O
<nUm> O
mol O
/ O
L O
Al2(SO4)3*16H2O O
at O
<nUm> O
° O
C O
. O


anodized B-SMT
Al-Cu B-MAT
alloy B-DSC
was O
immediately O
dipped B-SMT
in I-SMT
boiling I-SMT
water I-SMT
for O
<nUm> O
min O
to O
seal O
the O
micro O
pores O
present O
in O
anodic B-PRO
oxide B-MAT
films B-DSC
. O


the O
time O
required O
before O
initiating O
pitting O
corrosion O
of O
anodized B-SMT
Al-Cu B-MAT
alloy B-DSC
is O
longer O
with O
ECAP B-SMT
than O
without O
, O
indicating O
that O
ECAP B-SMT
process O
improves O
the O
pitting B-PRO
corrosion I-PRO
resistance I-PRO
of O
anodized B-SMT
Al-Cu B-MAT
alloy B-DSC
. O


second O
phase O
precipitates B-DSC
such O
as O
Si B-MAT
, O
Al-Cu-Mg B-MAT
and O
Al-Cu-Si-Fe-Mn B-MAT
intermetallic B-PRO
compounds O
are O
present O
in O
Al-Cu B-MAT
alloy B-DSC
and O
the O
size O
of O
these O
precipitates B-DSC
is O
greatly O
decreased O
by O
application O
of O
ECAP B-SMT
. O


Al-Cu-Mg B-MAT
intermetallic B-PRO
compounds O
are O
dissolved O
during O
anodization B-SMT
, O
whereas O
the O
precipitates B-DSC
composed O
of O
Si B-MAT
and O
Al-Cu-Si-Fe-Mn B-MAT
remain O
in O
anodic B-PRO
oxide B-MAT
films B-DSC
due O
to O
their O
more O
noble O
corrosion B-PRO
potential I-PRO
than O
al. B-MAT
FE B-CMT
- I-CMT
SEM I-CMT
and O
EPMA B-CMT
observation O
reveal O
that O
the O
pitting B-PRO
corrosion I-PRO
of O
anodized B-SMT
Al-Cu B-MAT
alloy B-DSC
occurs O
preferentially O
around O
Al-Cu-Si-Fe-Mn B-MAT
intermetallic B-PRO
compounds O
, O
since O
the O
anodic B-PRO
oxide B-MAT
films B-DSC
are O
absent O
at O
the O
boundary O
between O
the O
normal O
oxide B-MAT
films B-DSC
and O
these O
impurity O
precipitates O
. O


the O
improvement O
of O
pitting B-PRO
corrosion I-PRO
resistance I-PRO
of O
anodized B-SMT
Al-Cu B-MAT
alloy B-DSC
processed O
by O
ECAP B-SMT
appears O
to O
be O
attributed O
to O
a O
decrease O
in O
the O
size B-PRO
of I-PRO
precipitates I-PRO
, O
which O
act O
as O
origins O
of O
pitting O
corrosion O
. O


pre- O
, O
intermediate O
, O
and O
post-treatment O
of O
hard B-APL
coatings I-APL
to O
improve O
their O
performance O
for O
forming B-APL
and O
cutting B-APL
tools I-APL


three O
coating B-APL
systems O
, O
including O
single B-DSC
- I-DSC
layer I-DSC
AlCrNSi B-MAT
coatings B-APL
, O
two B-DSC
- I-DSC
layer I-DSC
BCrNSi B-MAT
/ O
CrN B-MAT
coatings B-APL
, O
and O
single B-DSC
- I-DSC
layer I-DSC
AlNTi B-MAT
coatings B-APL
were O
deposited O
using O
an O
arc B-SMT
evaporation I-SMT
system I-SMT
. O


the O
effects O
of O
various O
pre- O
, O
intermediate O
, O
and O
post-treatments O
on O
the O
properties O
and O
performance O
of O
the O
coatings B-APL
were O
studied O
. O


the O
tribological B-PRO
properties I-PRO
of O
the O
AlCrNSi B-MAT
and O
AlNTi B-MAT
coatings B-APL
were O
evaluated O
using O
ball B-CMT
- I-CMT
on I-CMT
- I-CMT
disc I-CMT
tests I-CMT
. O


the O
wear B-PRO
behavior I-PRO
of O
the O
AlCrNSi B-MAT
coatings B-APL
was O
affected O
by O
coating B-APL
morphology B-PRO
. O


the O
wear B-PRO
volume I-PRO
of O
the O
counter O
surface B-DSC
increased O
with O
the O
surface B-PRO
roughness I-PRO
of O
the O
coating B-APL
. O


furthermore O
, O
material O
transfer O
and O
build O
up O
to O
the O
coating B-APL
surface B-DSC
were O
higher O
for O
the O
surfaces B-DSC
treated O
by O
grinding B-SMT
and O
shot B-SMT
blasting I-SMT
than O
those O
treated O
by O
other O
methods O
. O


the O
erosion B-PRO
and O
corrosion B-PRO
properties I-PRO
of O
the O
BCrNSi B-MAT
/ O
CrN B-MAT
coatings B-APL
were O
evaluated O
in O
molten O
aluminum B-MAT
and O
sulfuric O
acid O
, O
respectively O
. O


intermediate O
treatment O
of O
the O
BCrNSi B-MAT
/ O
CrN B-MAT
coatings B-APL
improved O
their O
erosion B-PRO
and O
corrosion B-PRO
resistance I-PRO
by O
preventing O
formation O
of O
localized O
erosion O
and O
corrosion O
. O


post-treatment O
of O
the O
AlNTi B-MAT
coatings B-APL
decreased O
the O
amount O
of O
material O
transfer O
and O
wear B-PRO
volume I-PRO
of O
the O
counter O
surface B-DSC
. O


meanwhile O
, O
drilling B-CMT
tests I-CMT
of O
the O
AlNTi B-MAT
coatings B-APL
showed O
that O
post-treatment O
of O
the O
coatings B-APL
improved O
the O
drilling B-PRO
regularity I-PRO
and O
stabilized O
the O
spindle O
torque O
, O
which O
helped O
to O
improve O
tool B-PRO
wear I-PRO
and O
cutting B-PRO
performance I-PRO
. O


based O
on O
these O
results O
, O
mechanical B-SMT
surface I-SMT
pre-treatment I-SMT
by O
processes O
like O
micro-blasting B-SMT
, O
polishing B-SMT
, O
and O
buffing B-SMT
, O
along O
with O
plasma B-SMT
nitriding I-SMT
can O
improve O
the O
tribological B-PRO
properties I-PRO
and O
adhesion B-PRO
of O
coating B-APL
systems O
. O


likewise O
, O
intermediate O
and O
post-treatment O
of O
coating B-APL
surfaces O
improve O
erosion B-PRO
and O
corrosion B-PRO
resistance I-PRO
and O
cutting B-PRO
performance I-PRO
. O


In O
conclusion O
, O
the O
studied O
treatment O
processes O
gave O
coatings B-APL
with O
good O
performance O
that O
are O
possible O
candidates O
for O
forming B-APL
and O
cutting B-APL
tools I-APL
. O


study O
of O
the O
morphological B-PRO
evolution I-PRO
of O
OZn B-MAT
nanostructures B-DSC
on O
various O
sapphire B-MAT
substrates B-DSC


zinc B-MAT
oxide I-MAT
( O
OZn B-MAT
) O
nanostructures B-DSC
were O
grown O
on O
A- O
, O
C- O
and O
r-plane O
sapphires B-MAT
by O
metal B-CMT
organic I-CMT
chemical I-CMT
vapor I-CMT
deposition I-CMT
( O
MOCVD B-CMT
) O
technique O
. O


the O
shape O
of O
nanostructures B-DSC
was O
greatly O
influenced O
by O
the O
underlying O
sapphire B-MAT
substrate B-DSC
. O


vertical O
aligned O
nanowires B-DSC
were O
observed O
on O
A- O
and O
c-plane O
sapphires B-MAT
, O
whereas O
the O
nanopencils B-DSC
were O
grown O
on O
r-plane O
sapphire B-MAT
. O


A O
correlation O
between O
the O
morphological B-PRO
and O
optical B-PRO
properties I-PRO
of O
the O
nanostructures B-DSC
has O
been O
established O
, O
where O
the O
morphological B-PRO
and O
structural B-PRO
characteristics I-PRO
are O
responsible O
for O
the O
evolution O
of O
optical B-PRO
properties I-PRO
. O


the O
nanowires B-DSC
, O
grown O
on O
c-plane O
sapphires B-MAT
, O
have O
shown O
superior O
optical B-PRO
properties I-PRO
. O


comparatively O
higher O
photo B-PRO
- I-PRO
induced I-PRO
wettability I-PRO
transition I-PRO
has O
also O
been O
observed O
for O
OZn B-MAT
nanostructures B-DSC
on O
r-plane O
sapphire B-MAT
. O


vibrational B-PRO
properties I-PRO
and O
network B-PRO
topology I-PRO
of O
amorphous B-DSC
AsS B-MAT
systems O


we O
have O
measured O
the O
raman B-CMT
scattering I-CMT
and O
the O
infrared B-CMT
absorption I-CMT
and O
reflection B-CMT
spectra I-CMT
of O
a-AsxS1-x B-MAT
( I-MAT
<nUm> I-MAT
≤ I-MAT
x I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT
systems O
and O
have O
calculated O
the O
vibrational B-PRO
frequencies I-PRO
at O
the O
center O
of O
brillouin O
zone O
and O
the O
intensity O
of O
the O
oscillator B-PRO
strengths I-PRO
of O
the O
stretching B-PRO
modes I-PRO
of O
crystalline B-DSC
As2S3 B-MAT
. O


these O
results O
indicate O
that O
the O
IR B-CMT
and O
raman B-CMT
modes O
in O
a-AsS B-MAT
systems O
are O
originated O
in O
the O
AsS B-MAT
network O
rather O
than O
in O
a O
pyramidal O
unit O
. O


the O
calculations O
of O
the O
vibrational B-PRO
frequencies I-PRO
in O
the O
S8 O
ring O
molecule O
and O
the O
rigid B-PRO
- I-PRO
layer I-PRO
modes I-PRO
of O
crystalline B-DSC
As2S3 B-MAT
show O
that O
the O
long B-PRO
range I-PRO
interactions I-PRO
between O
the O
non-bonded O
atoms O
are O
weak O
but O
important O
. O


optimization O
of O
FKr B-MAT
laser B-SMT
ablation I-SMT
parameters O
for O
in-situ O
growth O
of O
Y1Ba2Cu3O7-d B-MAT
thin B-DSC
films I-DSC


using O
a O
FKr B-MAT
pulsed B-APL
excimer I-APL
laser I-APL
, O
various O
interrelated O
deposition O
parameters O
governing O
the O
quality O
of O
laser B-SMT
- I-SMT
ablated I-SMT
Y1Ba2Cu3O1-d(123) B-MAT
thin B-DSC
films I-DSC
have O
been O
systematically O
studied O
. O


modification O
of O
the O
<nUm> O
target O
with O
increasing O
laser O
exposure O
has O
been O
found O
to O
affect O
the O
plume B-PRO
stability I-PRO
, O
and O
the O
axis O
of O
the O
plume O
has O
been O
found O
to O
shift O
slowly O
towards O
the O
direction O
of O
the O
laser O
beam O
. O


small O
laser O
spots O
exposing O
a O
relatively O
large O
diameter O
annular O
track O
of O
the O
rotating O
target O
have O
been O
found O
to O
give O
better O
plume B-PRO
stability I-PRO
than O
larger O
spots O
exposing O
the O
same O
diameter O
track O
. O


because O
of O
better O
plume B-PRO
stability I-PRO
and O
larger O
plume O
expansion O
, O
smaller O
laser O
spots O
have O
been O
found O
to O
give O
significantly O
better O
quality O
<nUm> O
films B-DSC
as O
compared O
with O
large O
spots O
under O
optimised O
growth O
conditions.The O
effects O
of O
varying O
O O
pressure O
and O
target O
- O
substrate B-DSC
distance O
have O
been O
found O
to O
be O
similar O
and O
the O
location O
of O
the O
substrates B-DSC
at O
or O
close O
to O
the O
tip O
of O
the O
plume O
has O
been O
found O
to O
be O
important O
for O
the O
realization O
of O
film B-DSC
stoichiometry B-PRO
and O
high O
quality O
. O


results O
have O
shown O
that O
under O
optimised O
conditions O
of O
<nUm> O
J O
cm-2 O
fluence O
, O
<nUm> O
m O
TorrO2 O
pressure O
and O
<nUm> O
cm O
target O
- O
substrate B-DSC
distance O
, O
films B-DSC
with O
Tc B-PRO
= O
<nUm> O
 O
K,DT[?]1 O
K O
and O
critical B-PRO
current I-PRO
density,Jc I-PRO
≥ O
<nUm> O
× O
<nUm> O
A O
cm O
at O
<nUm> O
K O
can O
be O
reproducibly O
realized O
on O
<100>  O
MgO B-MAT
substrates B-DSC
with O
small O
( O
<nUm> O
mm O
× O
<nUm> O
mm O
) O
laser O
spots O
. O


the O
electrochemical B-PRO
activity I-PRO
of O
polyaniline O
: O
an O
important O
issue O
on O
its O
use O
in O
electrochemical B-APL
energy I-APL
storage I-APL
devices I-APL


the O
efficiency B-PRO
of O
an O
energy B-APL
storage I-APL
device I-APL
is O
closely O
related O
to O
the O
reversibility B-PRO
and O
electrochemical B-PRO
activity I-PRO
of O
the O
electrode B-APL
materials O
. O


although O
polyaniline O
( O
PANI O
) O
has O
been O
used O
to O
fabricate O
various O
electrochemical B-APL
devices I-APL
, O
its O
electrochemical B-PRO
activity I-PRO
has O
not O
received O
enough O
attention O
. O


here O
, O
high O
reversible O
electrochemical O
active O
PANI O
nanofibers B-DSC
are O
prepared O
and O
mixed O
with O
hydroxyethyl O
cellulose O
( O
HEC O
) O
. O


their O
supercapacitive B-PRO
performance I-PRO
is O
investigated O
by O
cyclic B-CMT
voltammetry I-CMT
( O
CV B-CMT
) O
, O
galvanostatic B-CMT
charge I-CMT
/ I-CMT
discharge I-CMT
and O
electrochemical B-CMT
impedance I-CMT
spectroscopy I-CMT
( O
EIS B-CMT
) O
techniques O
on O
Pt B-MAT
electrodes B-APL
. O


the O
results O
show O
that O
the O
obtained O
PANI O
has O
reversible O
electrochemical B-PRO
activity I-PRO
on O
Pt B-MAT
electrode B-APL
. O


but O
the O
electrochemical B-PRO
activity I-PRO
decreases O
gradually O
with O
the O
increase O
of O
HEC O
content O
and O
even O
disappears O
when O
the O
HEC O
content O
reaches O
<nUm> O
% O
. O


it O
suggests O
that O
the O
content O
of O
the O
inactive O
materials O
should O
be O
controlled O
strictly O
to O
guarantee O
the O
electrochemical B-PRO
activity I-PRO
of O
the O
electrode B-APL
materials O
in O
fabricating O
high O
performance O
electrochemical B-APL
energy I-APL
storage I-APL
devices I-APL
. O


anodic B-SMT
oxidation I-SMT
of O
silicon B-MAT
carbide I-MAT


oxide B-MAT
films B-DSC
up O
to O
<nUm> O
å O
thick O
have O
been O
grown O
on O
CSi B-MAT
by O
anodizing B-SMT
p- B-PRO
or O
n B-PRO
- I-PRO
type I-PRO
crystals B-DSC
in O
a O
constant O
current O
mode O
, O
in O
a O
diethylene O
glycol O
- O
KNO3 O
solution O
. O


several O
features O
of O
the O
anodization B-SMT
process O
are O
reported O
here O
for O
the O
first O
time O
. O


using O
ellipsometric B-CMT
analysis I-CMT
, O
the O
refractive B-PRO
index I-PRO
of O
the O
films B-DSC
was O
measured O
to O
be O
<nUm> O
at O
<nUm> O
å O
. O


this O
and O
other O
results O
suggest O
that O
silicon B-MAT
dioxide I-MAT
is O
formed O
during O
anodization B-SMT
. O


certain O
discrepancies O
that O
make O
further O
confirmation O
necessary O
are O
discussed O
. O


densification B-SMT
and O
characterization O
of O
spark B-SMT
plasma I-SMT
sintered I-SMT
CZr B-MAT
– I-MAT
O2Zr I-MAT
composites B-DSC


CZr B-MAT
based O
composites B-DSC
alloyed B-SMT
by O
nanosized B-DSC
tetragonal B-SPL
<nUm> O
mol O
% O
yttria B-MAT
stabilized B-DSC
zirconia B-MAT
were O
produced O
with O
spark B-SMT
plasma I-SMT
sintering I-SMT
to O
> O
<nUm> O
% O
of O
the O
theoretical B-PRO
density I-PRO
by O
sintering B-SMT
at O
<nUm> O
° O
C O
under O
pressure O
of O
50MPa O
for O
<nUm> O
min O
. O


the O
volume O
fraction O
of O
stabilized O
zirconia B-MAT
varied O
from O
<nUm> O
to O
40vol O
% O
in O
the O
precursor O
powder B-DSC
blend O
. O


room O
temperature O
hardness B-PRO
and O
modulus B-PRO
of I-PRO
elasticity I-PRO
of O
the O
compacts B-DSC
were O
in O
the O
range O
reported O
earlier O
for O
similar O
materials O
densified B-SMT
by O
pressureless B-SMT
sintering I-SMT
, O
while O
indentation B-PRO
fracture I-PRO
toughness I-PRO
was O
around O
<nUm> O
MPam1 O
/ O
<nUm> O
. O


structural B-CMT
analysis I-CMT
indicated O
formation O
of O
oxycarbides B-MAT
of O
various O
stoichiometries B-PRO
. O


synthesis O
, O
structure B-PRO
, O
and O
magnetic B-PRO
behavior I-PRO
of O
a O
new O
chloride O
thiosilicate O
with O
neodymium B-MAT
Nd3ClS2[SiS4] I-MAT


single B-DSC
crystals I-DSC
of O
Nd3ClS2[SiS4] B-MAT
were O
prepared O
from O
the O
elements O
. O


data O
collection O
was O
carried O
out O
using O
a O
STOE B-CMT
image I-CMT
plate I-CMT
detector I-CMT
at O
293K O
. O


the O
compound O
crystallizes O
in O
the O
orthorhombic B-SPL
space O
group O
pnma B-SPL
with O
eight O
familiar O
units O
in O
a O
cell O
of O
dimension O
: O
a B-PRO
= O
<nUm> O
b O
= O
<nUm> O
c O
= O
<nUm> O
pm O
the O
corresponding O
residual O
( O
all O
data O
) O
for O
the O
refined O
structures O
is O
<nUm> O
% O
. O


In O
the O
crystal B-PRO
structure I-PRO
, O
the O
chloride O
ions O
form O
chains O
along O
[010] O
with O
trigonal O
coordination O
by O
the O
lanthanide O
ions O
. O


the O
magnetic B-PRO
behavior I-PRO
of O
powdered B-DSC
crystals I-DSC
was O
interpreted O
by O
ligand B-CMT
field I-CMT
calculations I-CMT
where O
the O
influence O
of O
the O
ligand B-PRO
field I-PRO
was O
taken O
into O
account O
by O
applying O
the O
angular B-CMT
overlap I-CMT
model I-CMT
and O
magnetic B-PRO
exchange I-PRO
by O
the O
molecular B-CMT
field I-CMT
approximation I-CMT
. O


ferroelectric B-PRO
properties I-PRO
of O
bismuth B-MAT
titanate I-MAT
niobate I-MAT
Bi7NbO21Ti4 I-MAT
thin B-DSC
film I-DSC


the O
ferroelectric B-PRO
properties I-PRO
of O
the O
bismuth B-MAT
titanate I-MAT
niobate I-MAT
Bi7NbO21Ti4 I-MAT
thin B-DSC
film I-DSC
have O
been O
studied O
. O


the O
Bi7NbO21Ti4 B-MAT
thin B-DSC
film I-DSC
was O
successfully O
fabricated O
on O
platinized B-SMT
Si B-MAT
substrates B-DSC
by O
chemical B-SMT
solution I-SMT
deposition I-SMT
method O
. O


the O
crystallization O
of O
bismuth B-MAT
titanate I-MAT
niobate I-MAT
thin B-DSC
film I-DSC
was O
observed O
using O
an O
x-ray B-CMT
diffraction I-CMT
analysis I-CMT
( O
XRD B-CMT
) O
. O


the O
hysteresis B-CMT
loop I-CMT
was O
observed O
a O
standardized O
ferroelectric B-CMT
test I-CMT
system O
. O


the O
thin B-DSC
film I-DSC
exhibits O
ferroelectric B-PRO
hysteresis I-PRO
with O
remnant B-PRO
polarization I-PRO
P I-PRO
r I-PRO
= O
<nUm> O
mC O
/ O
cm2 O
and O
coercive B-PRO
field I-PRO
e I-PRO
c I-PRO
= O
<nUm> O
kV O
/ O
cm O
. O


studies O
of O
<nUm> O
<nUm> O
Cu B-MAT
- O
NQR B-CMT
and O
electrical B-PRO
resistivity I-PRO
for O
the O
wide O
range O
of O
x O
in O
La B-MAT
2-x I-MAT
Sr I-MAT
x I-MAT
CuO I-MAT
<nUm> I-MAT


the O
nuclear B-PRO
spin I-PRO
- I-PRO
lattice I-PRO
relaxation I-PRO
rate I-PRO
, O
<nUm> O
/ O
T1 B-PRO
, O
of O
Cu B-MAT
- O
NQR B-CMT
in O
La2-xSrxCuO4 B-MAT
is O
suppressed O
by O
superconductivity B-PRO
without O
the O
BCS B-PRO
type I-PRO
enhancement I-PRO
just O
below O
Tc B-PRO
, O
while O
its O
temperature O
dependence O
obeys O
the O
korringa B-CMT
relation I-CMT
below O
<nUm> O
K O
in O
the O
normal O
region O
. O


the O
clear O
changes O
of O
the O
enhancement O
of O
<nUm> O
/ O
T1 B-PRO
and O
<nUm> O
/ O
T2 B-PRO
and O
also O
of O
the O
profile O
of O
the O
Cu B-MAT
- O
NQR B-CMT
spectra O
are O
observed O
with O
increasing O
x O
beyond O
x O
= O
<nUm> O
∼ O
<nUm> O
, O
suggesting O
the O
change O
of O
the O
electronic B-PRO
state I-PRO
of O
the O
La B-MAT
- O
system O
around O
x O
= O
<nUm> O
∼ O
<nUm> O
. O


the O
anomalies O
of O
relaxation O
and O
intensity O
of O
Cu B-MAT
- O
NQR B-CMT
near O
x O
= O
<nUm> O
, O
where O
the O
electronic B-PRO
state I-PRO
is O
again O
localized O
, O
seems O
to O
be O
newly O
suggestive O
of O
magnetic B-PRO
order I-PRO
. O


nanocomposites B-DSC
of O
carbon B-MAT
nanotubes B-DSC
embedded O
in O
a O
(Ti,Al)N B-MAT
coated B-SMT
film B-DSC


titanium B-MAT
aluminum I-MAT
nitride I-MAT
( O
(Ti,Al)N B-MAT
) O
thin B-DSC
films I-DSC
are O
widely O
used O
as O
hard B-APL
protective I-APL
coating I-APL
materials O
. O


due O
to O
their O
remarkable O
tensile B-PRO
strength I-PRO
and O
elastic B-PRO
modulus I-PRO
carbon B-MAT
nanotubes B-DSC
( O
CNTs B-MAT
) O
are O
an O
ideal O
candidate O
as O
reinforcing B-APL
components I-APL
in O
such O
coatings B-APL
. O


In O
this O
work O
(Ti,Al)N B-MAT
thin B-DSC
films I-DSC
were O
deposited O
on O
steel B-MAT
substrate B-DSC
by O
reactive B-SMT
magnetron I-SMT
sputtering I-SMT
and O
CNTs B-MAT
were O
grown O
on O
top O
by O
chemical B-SMT
vapor I-SMT
deposition I-SMT
( O
CVD B-SMT
) O
. O


A O
second O
(Ti,Al)N B-MAT
film B-DSC
covered O
the O
CNTs B-MAT
in O
order O
to O
achieve O
a O
nanocomposite B-DSC
structure B-PRO
similar O
to O
reinforced O
concrete B-MAT
. O


the O
chemical O
evolution O
of O
the O
substrate B-DSC
, O
structure B-PRO
, O
morphology B-PRO
and O
growth B-PRO
of O
CNTs B-MAT
were O
analyzed O
by O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
. O


it O
was O
possible O
to O
achieve O
homogeneous O
dispersion O
of O
the O
CNTs B-MAT
within O
the O
matrix O
by O
adjusting O
the O
CVD B-SMT
time O
. O


mechanical B-CMT
testing I-CMT
of O
the O
adherence B-PRO
and O
nanohardness B-PRO
of O
the O
(Ti,Al)N B-MAT
/ O
CNT B-MAT
/ O
(Ti,Al)N B-MAT
composite B-DSC
coating B-APL
were O
performed O
by O
scratch B-CMT
and O
nanoindentation B-CMT
tests I-CMT
. O


the O
improvement O
of O
mechanical B-PRO
properties I-PRO
by O
CNT B-MAT
integration O
resulted O
in O
an O
increase O
of O
the O
hardness B-PRO
and O
of O
young B-PRO
's I-PRO
modulus I-PRO
. O


structure B-PRO
and O
low O
temperature O
physical B-PRO
properties I-PRO
of O
Ba4Cu3Ge20 B-MAT


structure B-PRO
, O
magnetization B-PRO
, O
heat B-PRO
capacity I-PRO
, O
thermoelectric B-PRO
properties I-PRO
of O
Ba4Cu3Ge20 B-MAT
are O
investigated O
. O


Ba4Cu3Ge20 B-MAT
crystallizes O
in O
clathrate B-SPL
I I-SPL
type I-SPL
structure O
with O
unit B-PRO
cell I-PRO
a I-PRO
= O
<nUm> O
(1)A. O
Ba4Cu3Ge20 B-MAT
exhibits O
diamagnetic B-PRO
susceptibility I-PRO
-0.024 O
emu O
/ O
gT O
, O
einstein B-PRO
temperature I-PRO
<nUm> O
K O
and O
debye B-PRO
temperature I-PRO
<nUm> O
K O
. O


the O
electrical B-PRO
conductivity I-PRO
σ I-PRO
, O
seebeck B-PRO
coefficient I-PRO
S I-PRO
, O
thermal B-PRO
conductivity I-PRO
κ I-PRO
, O
and O
the O
thermoelectric B-PRO
figure I-PRO
of I-PRO
merit I-PRO
ZT I-PRO
of O
Ba4Cu3Ge20 B-MAT
from O
2K O
to O
300K O
are O
reported O
. O


study O
of O
gadolinia B-MAT
- O
doped B-DSC
ceria B-MAT
solid B-APL
electrolyte I-APL
surface B-DSC
by O
XPS B-CMT


gadolinia B-MAT
- O
doped B-DSC
ceria B-MAT
( O
CGO B-MAT
) O
is O
an O
important O
material O
to O
be O
used O
as O
electrolyte B-APL
for O
solid B-APL
oxide I-APL
fuel I-APL
cell I-APL
for O
intermediate O
temperature O
operation O
. O


ceria B-MAT
doped B-DSC
with O
<nUm> O
mol O
% O
gadolinia B-MAT
( O
Ce18Gd2O39 B-MAT
) O
was O
prepared O
by O
conventional O
solid B-SMT
state I-SMT
synthesis I-SMT
and O
found O
to O
be O
single O
phase O
by O
room O
temperature O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
. O


the O
chemical B-PRO
states I-PRO
of O
the O
surface B-DSC
of O
the O
prepared O
sample O
were O
analyzed O
by O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
. O


though O
Gd B-MAT
was O
present O
in O
its O
characteristic O
chemical O
state O
, O
Ce B-MAT
was O
found O
in O
both O
ce4+ O
and O
ce3+ O
states O
. O


presence O
of O
ce3+ O
state O
was O
ascribed O
to O
the O
differential O
yield O
of O
oxygen O
atoms O
in O
the O
sputtering B-SMT
process O
. O


effects O
of O
FLi B-MAT
/ O
Al B-MAT
back B-APL
electrode I-APL
on O
the O
amorphous B-DSC
/ O
crystalline B-DSC
silicon B-MAT
heterojunction B-DSC
solar B-APL
cells I-APL


to O
improve O
the O
quantum B-PRO
efficiency I-PRO
( O
QE B-PRO
) O
and O
hence O
the O
efficiency B-PRO
of O
the O
amorphous B-DSC
/ O
crystalline B-DSC
silicon B-MAT
heterojunction B-DSC
solar B-APL
cell I-APL
, O
we O
have O
employed O
a O
FLi B-MAT
dielectric B-PRO
layer B-DSC
on O
the O
rear O
side O
. O


the O
high O
dipole B-PRO
moment I-PRO
of O
the O
FLi B-MAT
reduces O
the O
aluminum B-MAT
electrode B-APL
's O
work B-PRO
– I-PRO
function I-PRO
and O
then O
lowers O
the O
energy B-PRO
barrier I-PRO
at O
back B-APL
contact I-APL
. O


this O
lower O
energy B-PRO
barrier I-PRO
height I-PRO
helps O
to O
enhance O
both O
the O
operating B-PRO
voltage I-PRO
and O
the O
QE B-PRO
at O
longer O
wavelength O
region O
, O
in O
turn O
improves O
the O
open B-PRO
- I-PRO
circuit I-PRO
voltage I-PRO
( O
voc B-PRO
) O
, O
short B-PRO
- I-PRO
circuit I-PRO
current I-PRO
density I-PRO
( O
jsc B-PRO
) O
, O
and O
then O
overall O
cell B-PRO
efficiency I-PRO
. O


with O
optimized O
FLi B-MAT
layer B-DSC
thickness O
of O
<nUm> O
nm O
, O
<nUm> O
cm2 O
heterojunction B-DSC
with O
intrinsic O
thin B-DSC
layer I-DSC
( O
HIT B-DSC
) O
solar B-APL
cells I-APL
were O
produced O
with O
industry O
- O
compatible O
process O
, O
yielding O
voc B-PRO
of O
<nUm> O
mV O
, O
jsc B-PRO
of O
<nUm> O
mA O
/ O
cm2 O
, O
and O
cell B-PRO
efficiencies I-PRO
of O
<nUm> O
% O
. O


therefore O
FLi B-MAT
/ O
Al B-MAT
electrode B-APL
on O
rear O
side O
is O
proposed O
as O
an O
alternate O
back B-APL
electrode I-APL
for O
high O
efficiency B-PRO
HIT B-APL
solar I-APL
cells I-APL
. O


hydriding B-PRO
– I-PRO
dehydriding I-PRO
characteristics I-PRO
of O
NdNi5 B-MAT
and O
effects O
of O
sn-substitution B-SMT


the O
pressure B-PRO
– I-PRO
composition I-PRO
– I-PRO
temperature I-PRO
relations I-PRO
and O
the O
reaction B-PRO
kinetics I-PRO
for O
the O
NdNi5-sSns B-MAT
( I-MAT
s I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
) I-MAT
– I-MAT
H I-MAT
system O
are O
measured O
at O
temperatures O
between O
<nUm> O
and O
<nUm> O
K O
. O


the O
PCT B-PRO
for O
NdNi5 B-MAT
, O
which O
presents O
two O
well O
- O
separated O
plateau O
regions O
at O
rather O
high O
pressures O
, O
is O
strongly O
altered O
by O
the O
sn-substitution B-SMT
. O


namely O
, O
both O
plateau O
pressures O
are O
continually O
reduced O
with O
increasing O
substitution O
and O
the O
relative O
separation O
is O
reduced O
to O
cause O
a O
nearly O
single O
sloped O
plateau O
without O
reducing O
the O
maximum O
hydrogen B-PRO
capacity I-PRO
appreciably O
( O
H B-PRO
/ I-PRO
m I-PRO
∼ O
<nUm> O
) O
. O


furthermore O
, O
the O
hydriding B-PRO
and O
dehydriding B-PRO
kinetics I-PRO
are O
substantially O
improved O
by O
the O
sn-substitution O
. O


the O
promotion O
of O
the O
reaction B-PRO
kinetics I-PRO
is O
related O
with O
increased O
tendency O
toward O
pulverization O
during O
hydriding B-SMT
– O
dehydriding B-SMT
cycles O
. O


x-ray B-CMT
diffraction I-CMT
study O
suggests O
that O
NdNi5 B-MAT
is O
structurally O
stabilized O
by O
the O
sn-substitution O
against O
decomposition O
during O
the O
H B-SMT
– O
d B-SMT
cycles O
. O


In O
conclusion O
, O
Nd5Ni24Sn B-MAT
appears O
to O
be O
favorable O
for O
use O
as O
a O
hydrogen B-APL
storage I-APL
alloy B-DSC
in O
the O
above O
temperature O
range O
. O


enhanced O
ferromagnetic B-PRO
properties I-PRO
of O
Fe+N B-MAT
codoped B-DSC
O2Ti B-MAT
anatase B-SPL


the O
undoped O
, O
Fe B-MAT
- O
doped B-DSC
, O
N O
- O
doped B-DSC
and O
Fe+N B-MAT
codoped B-DSC
titanium B-MAT
dioxide I-MAT
( O
O2Ti B-MAT
) O
samples O
were O
synthesized O
. O


detailed O
analysis O
shows O
that O
all O
the O
samples O
are O
pure O
anatase B-SPL
with O
the O
shape O
of O
a O
nanorod B-DSC
, O
and O
N O
and O
Fe B-MAT
ions O
are O
incorporated O
into O
the O
O2Ti B-MAT
lattice O
. O


for O
all O
the O
samples O
, O
the O
saturation B-PRO
magnetization I-PRO
at O
room O
temperature O
is O
in O
the O
order O
of O
the O
Fe+N B-MAT
codoped B-DSC
O2Ti B-MAT
> O
N O
- O
doped B-DSC
O2Ti B-MAT
> O
Fe B-MAT
- O
doped B-DSC
O2Ti B-MAT
> O
undoped O
O2Ti B-MAT
. O


upon O
N O
doping O
, O
enhanced O
ferromagnetic B-PRO
properties I-PRO
were O
observed O
. O


the O
N O
content O
in O
Fe+N B-MAT
codoped B-DSC
O2Ti B-MAT
is O
about O
two O
times O
as O
large O
as O
that O
in O
the O
N O
- O
doped B-DSC
O2Ti B-MAT
, O
which O
may O
account O
for O
the O
largest O
saturation B-PRO
magnetization I-PRO
observed O
in O
Fe+N B-MAT
codoped B-DSC
O2Ti B-MAT
. O


it O
is O
suggested O
that O
metal O
ion O
and O
N O
codoping O
may O
provide O
a O
new O
approach O
for O
increasing O
the O
saturation B-PRO
magnetization I-PRO
in O
O2Ti B-MAT
- O
based O
dilute B-PRO
magnetic I-PRO
semiconductors I-PRO
. O


mossbauer B-CMT
spectroscopy I-CMT
on O
the O
double B-DSC
substituted I-DSC
lithium B-MAT
ferrite I-MAT
Li[Fe0.9(Al I-MAT
x I-MAT
ga1-x I-MAT
)0.1]5O8 I-MAT


room O
temperature O
mossbauer B-CMT
spectra O
of O
Ga B-MAT
and O
Al B-MAT
substituted B-DSC
lithium B-MAT
ferrite I-MAT
Li[Fe0.9(AlxGa1-x)0.1]5O8 I-MAT
with I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
and I-MAT
<nUm> I-MAT
are O
reported O
. O


it O
is O
shown O
that O
the O
varying O
covalence B-PRO
of I-PRO
bonds I-PRO
caused O
by O
gallium B-MAT
and O
aluminium B-MAT
ions O
can O
explain O
the O
observed O
values O
of O
hyperfine B-PRO
fields I-PRO
and O
isomer B-PRO
- I-PRO
shifts I-PRO
. O


domain B-PRO
structure I-PRO
of O
[(Na0.7K0.2Li0.1)0.5Bi0.5]TiO3 B-MAT
ceramics B-DSC
studied O
by O
piezoresponse B-CMT
force I-CMT
microscopy I-CMT


the O
domain B-PRO
structure I-PRO
of O
lead B-PRO
- I-PRO
free I-PRO
ceramics B-DSC
[(Na0.7K0.2Li0.1)0.5Bi0.5]TiO3 B-MAT
was O
studied O
by O
piezoresponse B-CMT
force I-CMT
microscopy I-CMT
( O
PFM B-CMT
) O
method O
. O


the O
complicated O
curved O
domain B-PRO
structure I-PRO
was O
observed O
in O
the O
ceramics B-DSC
, O
and O
there O
are O
some O
nano B-PRO
domains I-PRO
in O
the O
sub-microsized B-PRO
domains I-PRO
, O
which O
indicate O
the O
relaxor B-PRO
nature I-PRO
of O
the O
material O
. O


the O
mechanism O
for O
the O
strong O
relaxation O
of O
the O
material O
was O
discussed O
in O
the O
letter O
. O


the O
reversal B-PRO
behavior I-PRO
of O
the O
domain B-PRO
was O
also O
studied O
by O
PFM B-CMT
method O
. O


only O
part O
of O
the O
domains B-PRO
reversed O
after O
the O
poling O
process O
, O
and O
domains B-PRO
of O
the O
ceramics B-DSC
reversed O
back O
from O
the O
center O
of O
the O
domains B-PRO
at O
first O
. O


photovoltaic B-PRO
response I-PRO
in O
electrochemically B-SMT
prepared I-SMT
photoluminescent B-PRO
porous B-DSC
silicon B-MAT


using O
the O
electrochemical B-SMT
procedure I-SMT
for O
the O
production O
of O
porous B-DSC
Si B-MAT
, O
material O
is O
produced O
which O
shows O
a O
solid B-PRO
state I-PRO
photovoltaic I-PRO
response I-PRO
. O


under O
simulated O
sunlight O
, O
the O
open B-PRO
circuit I-PRO
voltage I-PRO
is O
near O
<nUm> O
V O
and O
the O
photocurrent B-PRO
is O
near O
<nUm> O
mA O
. O


the O
current B-PRO
- I-PRO
voltage I-PRO
characteristics I-PRO
exhibit O
a O
high O
series B-PRO
resistance I-PRO
which O
is O
on O
the O
order O
of O
<nUm> O
MO O
. O


the O
spectral B-PRO
response I-PRO
is O
characteristic O
of O
the O
silicon B-MAT
itself O
, O
and O
suggests O
that O
a O
heterojunction B-APL
is O
formed O
between O
the O
high O
effective O
bandgap B-PRO
porous B-DSC
silicon B-MAT
and O
the O
bulk B-DSC
p-silicon B-MAT
wafer B-DSC
. O


time B-CMT
resolved I-CMT
photoconductivity I-CMT
measurements O
indicate O
that O
the O
porous B-DSC
Si B-MAT
material O
is O
characterized O
by O
a O
high O
recombination B-PRO
rate I-PRO
. O


At O
low O
excess O
carrier B-PRO
density I-PRO
there O
is O
a O
barrier O
to O
this O
recombination O
which O
is O
tentatively O
ascribed O
to O
band B-PRO
bending I-PRO
and O
carrier O
injection O
at O
the O
porous B-DSC
Si B-MAT
/ O
crystalline B-DSC
Si B-MAT
interface B-DSC
. O


deposition O
of O
CVD B-SMT
diamond B-MAT
onto O
GaN B-MAT


A O
series O
of O
experiments O
have O
been O
performed O
to O
deposit O
continuous O
layers B-DSC
of O
CVD B-CMT
diamond B-MAT
onto O
epitaxial O
GaN B-MAT
films B-DSC
. O


such O
diamond B-MAT
coatings B-APL
would O
be O
useful O
to O
enhance O
the O
light B-PRO
extraction I-PRO
and O
heat B-PRO
dissipation I-PRO
in O
GaN B-MAT
LEDs B-APL
. O


A O
hot B-SMT
filament I-SMT
CVD I-SMT
reactor O
utilising O
a O
CH4 O
/ O
H O
gas O
mixture O
was O
used O
to O
deposit O
the O
diamond B-MAT
. O


the O
substrates B-DSC
consisted O
of O
an O
epitaxial O
layer B-DSC
of O
GaN B-MAT
grown O
onto O
a O
sapphire B-MAT
base O
. O


it O
was O
found O
that O
at O
deposition O
temperatures O
> O
<nUm> O
° O
C O
the O
GaN B-MAT
decomposed O
, O
evolving O
gaseous O
N O
which O
created O
pinholes O
in O
the O
growing O
diamond B-MAT
layer B-DSC
or O
caused O
it O
to O
delaminate O
. O


lowering O
the O
substrate B-DSC
temperature O
below O
<nUm> O
° O
C O
resulted O
in O
a O
prohibitively O
low O
growth O
rate O
and O
poor O
quality O
diamond B-MAT
. O


results O
will O
also O
be O
presented O
from O
a O
further O
series O
of O
experiments O
performed O
using O
N O
addition O
to O
the O
CH4 O
/ O
H O
gas O
mixture O
, O
with O
the O
idea O
that O
a O
high O
background O
partial O
pressure O
of O
N O
would O
slow O
or O
prevent O
the O
decomposition O
of O
GaN B-MAT
. O


hollow B-DSC
O2Ti B-MAT
microspheres B-DSC
assembled O
with O
rutile B-SPL
mesocrystals B-DSC
: O
low O
- O
temperature O
one B-SMT
- I-SMT
pot I-SMT
synthesis I-SMT
and O
the O
photocatalytic B-PRO
performance I-PRO


hollow O
O2Ti B-MAT
microspheres B-DSC
assembled O
with O
rutile B-SPL
mesocrystal B-DSC
nanorods I-DSC
were O
precipitated O
directly O
from O
a O
mixed O
aqueous O
solution O
of O
C4K2O9Ti B-MAT
, O
HO B-MAT
and O
HNO3 B-MAT
at O
a O
low O
temperature O
of O
<nUm> O
° O
C O
. O


the O
hollow B-DSC
microspheres I-DSC
consisted O
of O
rutile B-SPL
mesocrystal B-DSC
nanorods I-DSC
with O
an O
average O
diameter O
of O
<nUm> O
nm O
and O
length O
of O
<nUm> O
nm O
. O


the O
morphology B-PRO
evolution O
upon O
the O
reaction O
duration O
suggests O
that O
the O
microstructure B-PRO
is O
formed O
through O
a O
hydrolysis B-SMT
– I-SMT
dissolution I-SMT
– I-SMT
precipitation I-SMT
procedure I-SMT
. O


the O
unique O
nanostructure B-DSC
of O
the O
hollow B-DSC
microspheres I-DSC
showed O
remarkable O
photocatalytic B-PRO
activity I-PRO
in O
photodegrading O
rhodamine O
B O
in O
water O
under O
the O
UV O
light O
illumination O
. O


pseudopotential B-CMT
calculations I-CMT
of O
electronic B-PRO
properties I-PRO
of O
ga1-x B-MAT
In I-MAT
x I-MAT
N I-MAT
alloys B-DSC
with O
zinc B-SPL
- I-SPL
blende I-SPL
structure B-PRO


this O
paper O
is O
concerned O
with O
the O
pseudopotential B-CMT
investigation I-CMT
of O
the O
electronic B-PRO
band I-PRO
structure I-PRO
and O
its O
related O
quantities O
for O
zinc B-SPL
- I-SPL
blende I-SPL
Ga1-xInxN B-MAT
alloys B-DSC
. O


our O
results O
for O
the O
important O
direct O
and O
indirect B-PRO
band I-PRO
- I-PRO
gap I-PRO
energies I-PRO
, O
electron B-PRO
effective I-PRO
masses I-PRO
and O
antisymmetric B-PRO
gaps I-PRO
for O
GaN B-MAT
and O
InN B-MAT
agree O
well O
with O
the O
available O
experimental O
data O
. O


attention O
has O
also O
been O
paid O
to O
the O
effect O
of O
alloy B-DSC
disorder B-PRO
on O
the O
electronic B-PRO
properties I-PRO
of O
Ga1-xInxN B-MAT
semiconductor B-PRO
alloys B-DSC
. O


for O
this O
purpose O
, O
the O
compositional B-PRO
disorder I-PRO
is O
added O
to O
the O
virtual B-CMT
crystal I-CMT
approximation I-CMT
as O
an O
effective O
potential O
. O


such O
correction O
improves O
significantly O
the O
value O
of O
the O
band B-PRO
- I-PRO
gap I-PRO
bowing I-PRO
parameters I-PRO
in O
Ga1-xInxN B-MAT
alloys B-DSC
. O


single B-PRO
- I-PRO
electron I-PRO
transistor I-PRO
properties I-PRO
of O
Fe B-MAT
– I-MAT
F2Sr I-MAT
granular B-DSC
films I-DSC


we O
prepared O
single B-APL
- I-APL
electron I-APL
tunnelling I-APL
( I-APL
SET I-APL
) I-APL
transistors I-APL
made O
of O
Fe B-MAT
nanodots B-DSC
and O
investigated O
their O
fundamental O
properties O
. O


the O
device O
films B-DSC
were O
composed O
of O
Fe B-MAT
nanodot B-DSC
arrays O
embedded O
in O
a O
F2Sr B-MAT
matrix B-DSC
fabricated O
by O
the O
co-evaporation B-SMT
method I-SMT
on O
thermally B-SMT
oxidized I-SMT
Si B-MAT
substrates B-DSC
. O


the O
Si B-MAT
substrates B-DSC
were O
used O
as O
backgate B-APL
electrodes I-APL
. O


the O
current B-PRO
- I-PRO
to I-PRO
- I-PRO
voltage I-PRO
curves I-PRO
between O
source O
and O
drain B-APL
electrodes I-APL
were O
nonlinear O
even O
at O
room O
temperature O
. O


coulomb O
blockade O
was O
clearly O
observed O
at O
8K O
. O


current O
oscillation O
which O
is O
another O
SET B-APL
characteristic O
was O
confirmed O
in O
the O
curves O
of O
drain B-PRO
current I-PRO
versus I-PRO
gate I-PRO
voltage I-PRO
. O


the O
oscillation B-PRO
period I-PRO
was O
roughly O
estimated O
to O
be O
about O
<nUm> O
– O
<nUm> O
V O
. O


deposition O
and O
oxidation B-PRO
behavior I-PRO
of O
Mo(Si,Al)2 B-MAT
/ O
BMo B-MAT
layered B-DSC
coatings B-APL
on O
TZM B-MAT
alloy B-DSC


A O
two B-SMT
- I-SMT
step I-SMT
pack I-SMT
cementation I-SMT
process I-SMT
including O
first O
boronizing B-SMT
and O
then O
co-depositing B-SMT
of O
Si-Al-Y B-MAT
with O
different O
Al B-MAT
contents O
( O
<nUm> O
, O
<nUm> O
and O
10wt O
% O
) O
in O
the O
packs O
was O
used O
to O
deposit O
oxidation B-APL
- I-APL
resistant I-APL
coatings I-APL
on O
TZM B-MAT
alloy B-DSC
. O


the O
as-formed B-DSC
coatings B-APL
are O
MoSi2 B-MAT
/ O
BMo B-MAT
, O
Mo(Si,Al)2 B-MAT
/ O
BMo B-MAT
, O
and O
Mo(Si,Al)2 B-MAT
/ O
Mo-Al-B B-MAT
/ O
BMo B-MAT
layered B-DSC
coatings B-APL
respectively O
. O


compared O
with O
the O
MoSi2 B-MAT
/ O
BMo B-MAT
coating B-APL
, O
the O
improved O
oxidation B-PRO
- I-PRO
resistant I-PRO
performance I-PRO
is O
presented O
in O
the O
Mo(Si,Al)2 B-MAT
/ O
BMo B-MAT
and O
Mo(Si,Al)2 B-MAT
/ O
Mo-Al-B B-MAT
/ O
BMo B-MAT
coatings B-APL
upon O
oxidation B-SMT
at O
<nUm> O
° O
C O
, O
which O
should O
be O
attributed O
to O
the O
sluggish O
inward O
diffusion O
of O
Si B-MAT
into O
substrate B-DSC
and O
forming O
dense O
scales O
composed O
of O
O2Si B-MAT
and O
Al2O3 B-MAT
. O


the O
microstructure B-PRO
change O
and O
oxidation B-PRO
behavior I-PRO
of O
these O
coatings B-APL
are O
investigated O
. O


microstructure B-PRO
evolution O
of O
cobalt B-MAT
coating B-APL
electroless B-SMT
plated I-SMT
on O
CSi B-MAT
whisker B-DSC
during O
electroless B-SMT
plating I-SMT
and O
heat B-SMT
treatment I-SMT


SiCw B-MAT
/ O
Co B-MAT
nanocomposite B-DSC
particles I-DSC
were O
prepared O
by O
electroless B-APL
plating I-APL
cobalt B-MAT
on O
CSi B-MAT
whiskers B-DSC
and O
the O
microstructure B-PRO
evolution O
of O
the O
plated B-SMT
coating B-APL
was O
investigated O
by O
SEM B-CMT
and O
XRD B-CMT
. O


SEM B-CMT
images O
show O
that O
growth O
occurs O
on O
the O
surface B-DSC
of O
the O
clusters B-DSC
at O
the O
initial O
stage O
; O
as O
they O
grow O
larger O
, O
the O
clusters B-DSC
converge O
to O
form O
a O
continuous O
coating B-APL
, O
which O
is O
actually O
stacking O
of O
cobalt B-MAT
clusters B-DSC
. O


after O
heat B-SMT
treated I-SMT
at O
<nUm> O
° O
C O
in O
a O
hydrogen O
atmosphere O
, O
the O
cobalt B-MAT
coating B-APL
transforms O
from O
an O
amorphous B-DSC
to O
a O
crystalline B-DSC
state O
. O


the O
thermal B-PRO
stability I-PRO
of O
SiCw B-MAT
/ O
Co B-MAT
composite B-DSC
is O
low O
because O
of O
the O
weak O
bonding O
between O
the O
substrate B-DSC
and O
the O
cobalt B-MAT
coating B-APL
. O


the O
continuous O
coating B-APL
aggregates O
to O
clusters B-DSC
through O
surface B-DSC
diffusion O
during O
heat B-SMT
treatment I-SMT
. O


investigation O
of O
magnetic B-PRO
properties I-PRO
of O
Al B-MAT
substituted B-DSC
nickel B-MAT
ferrite I-MAT
nanopowders B-DSC
, O
synthesized O
by O
the O
sol B-SMT
– I-SMT
gel I-SMT
method O


NiFe2-xAlxO4 B-MAT
nanopowders B-DSC
, O
where O
x O
is O
from O
<nUm> O
to O
<nUm> O
with O
a O
step O
of O
<nUm> O
, O
have O
been O
synthesized O
by O
the O
sol B-SMT
– I-SMT
gel I-SMT
method O
and O
the O
effect O
of O
non-magnetic B-PRO
aluminum B-MAT
content O
on O
their O
structural B-PRO
and O
magnetic B-PRO
properties I-PRO
were O
investigated O
. O


the O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
patterns O
revealed O
that O
the O
synthesized O
nanopowders B-DSC
are O
single B-DSC
phase I-DSC
with O
a O
spinel B-SPL
structure O
. O


mean O
crystallite B-PRO
sizes I-PRO
of O
the O
samples O
were O
calculated O
by O
scherrer B-CMT
's I-CMT
formula I-CMT
and O
were O
in O
the O
range O
<nUm> O
– O
<nUm> O
nm O
. O


the O
morphology B-PRO
of O
the O
nanopowders B-DSC
was O
investigated O
by O
TEM B-CMT
and O
the O
mean B-PRO
particle I-PRO
sizes I-PRO
of O
the O
samples O
were O
in O
the O
range O
<nUm> O
– O
<nUm> O
nm O
. O


magnetic B-CMT
hysteresis I-CMT
loops I-CMT
were O
recorded O
at O
room O
temperature O
in O
a O
maximum O
applied O
field O
of O
3000Oe O
. O


the O
results O
show O
that O
by O
increasing O
the O
aluminum B-MAT
content O
, O
the O
magnetizations B-PRO
of O
the O
nanopowders B-DSC
are O
decreased O
. O


this O
reduction O
is O
caused O
by O
non-magnetic B-PRO
al3+ O
ions O
, O
which O
by O
their O
substitutions O
the O
super B-PRO
exchange I-PRO
interactions I-PRO
between O
different O
sites O
will O
be O
reduced O
. O


it O
is O
also O
seen O
that O
the O
magnetizations B-PRO
of O
the O
nanopowders B-DSC
are O
lower O
than O
those O
related O
to O
their O
bulk B-DSC
counterparts O
. O


this O
reduction O
was O
found O
to O
be O
as O
a O
consequence O
of O
surface B-PRO
spin I-PRO
disorder I-PRO
. O


m B-PRO
– I-PRO
T I-PRO
curves I-PRO
of O
the O
samples O
were O
obtained O
using O
a O
faraday B-CMT
balance I-CMT
and O
by O
which O
the O
curie B-PRO
temperatures I-PRO
of O
the O
powders B-DSC
were O
determined O
. O


the O
results O
that O
are O
obtained O
show O
that O
the O
curie B-PRO
temperatures I-PRO
of O
the O
nanopowders B-DSC
are O
higher O
than O
those O
of O
their O
bulk B-DSC
counterparts O
. O


ultraviolet B-CMT
reflectance I-CMT
of O
Al2O3 B-MAT
, O
O2Si B-MAT
and O
BeO B-MAT


the O
room O
temperature O
ultraviolet B-CMT
reflectance I-CMT
spectra O
of O
flux B-SMT
grown I-SMT
red B-MAT
ruby I-MAT
( O
Al2O3 B-MAT
with O
∼ O
<nUm> O
per O
cent O
Cr2O3 B-MAT
) O
, O
flux B-SMT
grown I-SMT
beryllia B-MAT
( O
BeO B-MAT
) O
and O
natural O
quartz B-MAT
( O
O2Si B-MAT
) O
have O
been O
measured O
on O
natural O
faces O
of O
the O
crystals B-DSC
from O
<nUm> O
to O
<nUm> O
eV O
with O
an O
angle O
of O
incidence O
of O
<nUm> O
° O
. O


the O
spectra O
show O
exciton O
- O
like O
peaks O
at O
<nUm> O
, O
<nUm> O
and O
<nUm> O
eV O
for O
Al2O3 B-MAT
, O
BeO B-MAT
and O
O2Si B-MAT
, O
respectively O
, O
followed O
by O
broad O
structures O
presumably O
due O
to O
interband O
transitions O
. O


striking O
similarities O
between O
the O
spectra O
of O
Al2O3 B-MAT
and O
MgO B-MAT
are O
observed O
. O


highly O
nitrogen O
doped B-DSC
carbon B-MAT
nanosheets B-DSC
as O
an O
efficient O
electrocatalyst B-APL
for O
the O
oxygen B-APL
reduction I-APL
reaction I-APL


In O
this O
work O
, O
highly O
nitrogen O
doped B-DSC
carbon B-MAT
nanosheets B-DSC
( O
HNCNSs B-DSC
) O
have O
been O
successfully O
prepared O
by O
annealing B-SMT
EDTA O
calcium O
disodium O
salt O
. O


they O
exhibited O
a O
direct O
four O
- O
electron O
reaction O
pathway O
and O
high O
stability B-PRO
as O
an O
efficient O
metal B-APL
- I-APL
free I-APL
catalyst I-APL
for O
the O
oxygen B-APL
reduction I-APL
reaction I-APL
. O


influence O
of O
transition O
metal O
doping O
on O
the O
tribological B-PRO
properties I-PRO
of O
pulsed B-SMT
laser I-SMT
deposited I-SMT
DLC B-MAT
films B-DSC


doped B-DSC
or O
alloyed B-DSC
diamond B-MAT
- I-MAT
like I-MAT
carbon I-MAT
( O
DLC B-MAT
) O
films B-DSC
exhibit O
superior O
properties O
compared O
to O
undoped B-DSC
DLC B-MAT
films B-DSC
. O


but O
the O
choice O
of O
dopant O
plays O
a O
vital O
role O
in O
tailoring O
specific O
properties O
of O
the O
DLC B-MAT
film B-DSC
desired O
for O
specific O
application O
. O


In O
the O
present O
work O
, O
a O
comparative O
study O
has O
been O
carried O
out O
in O
order O
to O
bring O
out O
the O
effect O
of O
transition O
metal O
( O
TM O
) O
doped B-DSC
DLC B-MAT
film B-DSC
on O
the O
tribological B-PRO
properties I-PRO
. O


nanocomposite B-DSC
DLC B-MAT
/ I-MAT
TM I-MAT
( I-MAT
TM I-MAT
= I-MAT
Ag I-MAT
, I-MAT
Ti I-MAT
and I-MAT
Ni I-MAT
) I-MAT
films B-DSC
were O
deposited O
by O
nanosecond B-SMT
pulsed I-SMT
laser I-SMT
deposition I-SMT
( O
PLD B-SMT
) O
technique O
on O
to O
AISISS304 B-MAT
substrates B-DSC
. O


films B-DSC
microstructure B-PRO
and O
chemical B-PRO
behavior I-PRO
was O
studied O
by O
glancing B-CMT
incidence I-CMT
x-ray I-CMT
diffraction I-CMT
( O
GI B-CMT
- I-CMT
XRD I-CMT
) O
, O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
, O
raman B-CMT
spectroscopy I-CMT
and O
high B-CMT
resolution I-CMT
transmission I-CMT
electron I-CMT
microscopy I-CMT
( O
HRTEM B-CMT
) O
. O


the O
sp2 B-PRO
and O
sp3 B-PRO
fraction I-PRO
in O
the O
films B-DSC
are O
well O
described O
by O
electron B-CMT
energy I-CMT
loss I-CMT
spectroscopy I-CMT
( O
EELS B-CMT
) O
analysis O
. O


the O
raman B-CMT
spectra O
of O
DLC B-MAT
/ O
TM O
films B-DSC
showed O
peak O
shift O
towards O
lower O
wavenumber O
indicating O
the O
reduction O
of O
internal O
compressive B-PRO
stress I-PRO
. O


formation O
of O
TM O
nanoclusters B-DSC
and O
CTi B-MAT
phases O
were O
confirmed O
in O
DLC B-MAT
/ O
TM O
films B-DSC
by O
GI B-CMT
- I-CMT
XRD I-CMT
, O
XPS B-CMT
and O
HRTEM B-CMT
. O


DLC B-MAT
film B-DSC
doped I-DSC
with O
nanocrystalline B-DSC
Ag B-MAT
showed O
low O
friction B-PRO
behavior I-PRO
due O
to O
the O
formation O
of O
large O
amount O
of O
sp2 O
lubricant O
phase O
. O


however O
, O
high O
friction B-PRO
coefficient I-PRO
measured O
in O
DLC B-MAT
film B-DSC
doped I-DSC
with O
Ni B-MAT
and O
Ti B-MAT
. O


such O
a O
high O
friction B-PRO
is O
explained O
by O
the O
presence O
of O
hard B-PRO
CTi B-MAT
and O
sp3 O
phase O
in O
the O
DLC B-MAT
/ O
Ti B-MAT
and O
DLC B-MAT
/ O
Ni B-MAT
films B-DSC
respectively O
. O


sintering B-PRO
behavior I-PRO
and O
mechanical B-PRO
properties I-PRO
of O
WC B-MAT
– O
Al2O3 B-MAT
composites B-DSC
prepared O
by O
spark B-SMT
plasma I-SMT
sintering I-SMT
( O
SPS B-SMT
) O


the O
sintering B-PRO
behavior I-PRO
of O
WC B-MAT
– O
Al2O3 B-MAT
composites B-DSC
prepared O
via O
spark B-SMT
plasma I-SMT
sintering I-SMT
( O
SPS B-SMT
) O
was O
investigated O
. O


the O
initial O
WC B-MAT
– O
Al2O3 B-MAT
nanocomposite B-DSC
powders I-DSC
were O
prepared O
via O
metal B-SMT
organic I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
in O
a O
spouted O
bed O
followed O
by O
carburization B-SMT
process I-SMT
. O


then O
the O
nanocomposite B-DSC
powders I-DSC
were O
densified B-SMT
via O
SPS B-SMT
at O
<nUm> O
° O
C O
. O


the O
mechanical B-PRO
properties I-PRO
of O
sintered B-SMT
disks B-DSC
such O
as O
hardness B-PRO
and O
toughness B-PRO
were O
analyzed O
. O


the O
WC B-MAT
– O
Al2O3 B-MAT
composites B-DSC
show O
maximum O
toughness B-PRO
of O
<nUm> O
MPa*m1 O
/ O
<nUm> O
and O
hardness B-PRO
value O
of O
<nUm> O
GPa O
, O
which O
are O
higher O
than O
those O
of O
monolithic B-DSC
alumina B-MAT
. O


microstructure B-PRO
observations O
indicate O
that O
WC B-MAT
nanoparticles B-DSC
are O
dispersed O
within O
the O
alumina B-MAT
matrix O
which O
limit O
the O
grain B-PRO
growth I-PRO
of O
alumina B-MAT
matrix O
. O


the O
fracture B-PRO
mode I-PRO
changes O
from O
intergranular O
in O
the O
case O
of O
monolithic B-DSC
Al2O3 B-MAT
to O
transgranular O
mode O
for O
nanocomposites B-DSC
to O
reinforce O
their O
mechanical B-PRO
properties I-PRO
. O


single-unit-cell B-DSC
thick I-DSC
Mn3O4 B-MAT
nanosheets B-DSC


single-unit-cell B-DSC
thick I-DSC
Mn3O4 B-MAT
sheets B-DSC
were O
synthesized O
in O
an O
aqueous O
solution O
at O
room O
temperature O
. O


these O
nanosheets B-DSC
have O
a O
<001>  O
orientation O
and O
are O
terminated O
at O
the O
MnO2 B-MAT
atomic B-DSC
layer I-DSC
. O


due O
to O
the O
huge O
shape B-PRO
anisotropy I-PRO
, O
they O
demonstrated O
lower O
TC B-PRO
and O
much O
greater O
coercivity B-PRO
than O
those O
of O
bulk B-DSC
Mn3O4 B-MAT
, O
respectively O
. O


organic B-SMT
solvent I-SMT
- I-SMT
assisted I-SMT
free B-DSC
- I-DSC
standing I-DSC
Li2MnO3*LiNi1 B-MAT
/ I-MAT
3Co1 I-MAT
/ I-MAT
3Mn1 I-MAT
/ I-MAT
3O2 I-MAT
on O
3D B-DSC
graphene B-MAT
as O
a O
high B-APL
energy I-APL
density I-APL
cathode I-APL


A O
novel O
organic B-SMT
solvent I-SMT
- I-SMT
assisted I-SMT
freeze I-SMT
- I-SMT
drying I-SMT
pathway O
, O
which O
can O
effectively O
protect O
and O
uniformly O
distribute O
active O
particles B-DSC
, O
is O
developed O
to O
fabricate O
a O
free B-DSC
- I-DSC
standing I-DSC
Li2MnO3*LiNi1 B-MAT
/ I-MAT
3Co1 I-MAT
/ I-MAT
3Mn1 I-MAT
/ I-MAT
3O2 I-MAT
( I-MAT
LR I-MAT
) I-MAT
/ O
rGO B-MAT
electrode B-APL
on O
a O
large O
scale O
. O


thus O
, O
very O
high O
energy B-PRO
density I-PRO
and O
power B-PRO
density I-PRO
are O
realized O
for O
LR B-MAT
materials O
with O
robust O
long O
- O
term O
cyclability B-PRO
. O


In O
situ O
formation O
of O
Al B-MAT
/ O
Al3Ti B-MAT
composite B-DSC
coating B-APL
on O
pure B-DSC
Ti B-MAT
surface B-DSC
by O
TIG B-SMT
surfacing I-SMT
process I-SMT


In O
the O
current O
study O
, O
the O
in-situ O
formation O
of O
Al B-MAT
/ O
Al3Ti B-MAT
composite B-DSC
coating B-APL
on O
Ti B-MAT
surface B-DSC
during O
aluminium B-MAT
TIG B-SMT
cladding I-SMT
was O
investigated O
. O


In O
this O
regards O
, O
pure O
Al B-MAT
wire B-DSC
( O
graid O
<nUm> O
) O
was O
deposited O
on O
commercially O
pure O
Ti B-MAT
surface B-DSC
by O
means O
of O
TIG B-SMT
process I-SMT
and O
the O
produced O
coatings B-APL
were O
annealed B-SMT
at O
823K O
( O
<nUm> O
° O
C O
) O
for O
different O
periods O
of O
time O
. O


the O
coatings B-APL
were O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
optical B-CMT
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
OM B-CMT
& O
SEM B-CMT
) O
. O


the O
corrosion B-PRO
behaviour I-PRO
of O
the O
coatings B-APL
was O
also O
examined O
in O
ClNa B-MAT
<nUm> O
% O
electrolyte O
by O
potansiostate B-CMT
analysis I-CMT
. O


the O
results O
indicated O
that O
, O
Al B-MAT
/ O
Al3Ti B-MAT
composite B-DSC
coating B-APL
with O
average O
hardness B-PRO
value O
of O
about O
<nUm> O
HV O
can O
successfully O
form O
on O
Ti B-MAT
surface B-DSC
during O
TIG B-SMT
cladding I-SMT
process I-SMT
. O


by O
annealing B-SMT
the O
produced O
coatings B-APL
, O
the O
percentages O
of O
Al3Ti B-MAT
phase O
was O
increased O
and O
one O
adhesive O
and O
uniform O
Al3Ti B-MAT
layer B-DSC
was O
formed O
on O
clad B-DSC
/ O
substrate B-DSC
interface I-DSC
. O


by O
increasing O
the O
annealing B-SMT
times O
, O
the O
thickness O
of O
Al3Ti B-MAT
phase O
has O
increased O
and O
reached O
to O
a O
value O
of O
about O
<nUm> O
um O
after O
20h O
of O
annealing B-SMT
. O


the O
hardness B-PRO
and O
corrosion B-PRO
resistance I-PRO
of O
Al B-MAT
/ O
Al3Ti B-MAT
composite B-DSC
coating B-APL
was O
also O
enhanced O
by O
increasing O
the O
annealing B-SMT
time O
. O


tribology B-PRO
characteristics I-PRO
of O
ex-situ O
and O
in-situ O
tungsten B-MAT
carbide I-MAT
particles B-DSC
reinforced O
iron B-MAT
matrix B-DSC
composites I-DSC
produced O
by O
spark B-SMT
plasma I-SMT
sintering I-SMT


In O
this O
paper O
, O
ex-situ O
( O
adding O
the O
particles B-DSC
reinforcement O
phase O
into O
the O
matrix B-DSC
materials O
directly O
) O
and O
in-situ O
( O
the O
particles B-DSC
were O
synthesized O
directly O
from O
elemental O
powders B-DSC
of O
W B-MAT
and O
C B-MAT
during O
the O
fabrication O
) O
tungsten B-MAT
carbide I-MAT
particle B-DSC
reinforced O
iron B-MAT
matrix B-DSC
( O
WC B-MAT
/ O
Fe B-MAT
) O
composites B-DSC
were O
well O
fabricated O
by O
spark B-SMT
plasma I-SMT
sintering I-SMT
( O
SPS B-SMT
) O
with O
the O
particle O
volume O
fraction O
of O
approximately O
<nUm> O
% O
. O


the O
main O
phases O
were O
ferrite B-MAT
, O
WC B-MAT
, O
CW2 B-MAT
, O
CFe3W3 B-MAT
and O
pearlite B-MAT
. O


the O
content O
of O
CFe3W3 B-MAT
in O
ex-situ O
WC B-MAT
/ O
Fe B-MAT
composites B-DSC
was O
much O
higher O
than O
that O
in O
in-situ O
WC B-MAT
/ O
Fe B-MAT
composites B-DSC
, O
and O
some O
of O
which O
spread O
throughout O
particles B-DSC
in O
ex-situ O
WC B-MAT
/ O
Fe B-MAT
composites B-DSC
. O


the O
homogenous O
distribution O
of O
WC B-MAT
particles B-DSC
within O
the O
iron B-MAT
matrix B-DSC
was O
obtained O
with O
strong O
bonding O
to O
the O
matrix B-DSC
. O


the O
mean O
WC B-MAT
grain B-PRO
size I-PRO
was O
about O
<nUm> O
mm O
and O
<nUm> O
mm O
for O
ex-situ O
and O
in-situ O
WC B-MAT
/ O
Fe B-MAT
composites B-DSC
, O
respectively O
. O


compared O
with O
the O
traditional O
martensitic B-SPL
wear B-PRO
- I-PRO
resistant I-PRO
steels B-MAT
, O
these O
two O
type O
composites B-DSC
presented O
the O
more O
excellent O
wear B-PRO
resistance I-PRO
which O
was O
enhanced O
at O
least O
six O
times O
. O


moreover O
, O
due O
to O
the O
better O
particles B-PRO
size I-PRO
and O
interfacial B-PRO
microstructure I-PRO
, O
the O
in-situ O
composite B-DSC
had O
the O
lower O
specific O
wear B-PRO
rate I-PRO
( O
<nUm> O
× O
<nUm> O
− O
<nUm> O
mm3 O
/ O
nm O
) O
which O
was O
about O
<nUm> O
% O
to O
that O
of O
the O
ex-situ O
composite B-DSC
( O
<nUm> O
× O
<nUm> O
− O
<nUm> O
mm3 O
/ O
nm O
) O
. O


the O
dominant O
wear B-PRO
mechanism I-PRO
for O
the O
in-situ O
and O
ex-situ O
WC B-MAT
/ O
Fe B-MAT
composites B-DSC
was O
a O
combination O
of O
abrasive B-PRO
wear I-PRO
and O
oxidation B-PRO
wear I-PRO
, O
which O
was O
different O
from O
the O
micro-ploughing O
mechanism O
of O
the O
martensitic B-SPL
wear B-PRO
- I-PRO
resistant I-PRO
steel B-MAT
. O


for O
the O
ex-situ O
composites B-DSC
, O
coarse B-PRO
- I-PRO
grained I-PRO
WC B-MAT
and O
higher O
content O
of O
brittle B-PRO
phase O
CFe3W3 B-MAT
increased O
the O
wear B-PRO
rate I-PRO
and O
reduced O
the O
wear B-PRO
- I-PRO
resistance I-PRO
. O


reversible O
oxidation B-SMT
effects O
on O
carbon B-MAT
nanotubes B-DSC
thin I-DSC
films I-DSC
for O
gas B-APL
sensing I-APL
applications I-APL


carbon B-MAT
nanotubes B-DSC
( O
CNTs B-MAT
) O
thin B-DSC
films I-DSC
deposited O
by O
plasma B-SMT
- I-SMT
enhanced I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
( O
PECVD B-SMT
) O
have O
been O
investigated O
as O
resistive B-APL
gas I-APL
sensors I-APL
towards O
NO2 O
oxidizing O
gas O
. O


effects O
of O
air B-SMT
oxidative I-SMT
treatment I-SMT
dramatically O
influence O
the O
nanotubes B-DSC
' O
electrical B-PRO
resistance I-PRO
as O
determined O
by O
volt B-CMT
- I-CMT
amperometric I-CMT
measurements I-CMT
. O


In O
particular O
, O
the O
electrical B-CMT
measurements I-CMT
show O
that O
electrical B-PRO
behavior I-PRO
of O
the O
CNT B-MAT
films B-DSC
can O
be O
converted O
from O
semiconducting B-PRO
to O
metallic B-PRO
through O
thermal B-SMT
treatments I-SMT
in O
oxygen O
. O


after O
oxygen B-SMT
annealing I-SMT
, O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
proves O
the O
increase O
of O
oxygen O
linked O
to O
nickel B-MAT
located O
at O
the O
nanotube B-DSC
's O
cap O
and O
a O
no O
appreciable O
variation O
of O
oxygen O
physisorbed O
on O
the O
carbon B-MAT
nanotubes B-DSC
. O


tangential O
mode O
raman B-CMT
lines O
from O
metallic B-PRO
oxidized B-SMT
CNTs B-MAT
was O
found O
to O
depend O
sensitively O
on O
adsorbed O
oxidizing O
molecules O
exhibiting O
different O
line O
shapes O
than O
the O
as-deposited B-DSC
nanotubes I-DSC
. O


however O
, O
the O
line O
shapes O
became O
identical O
after O
thermal B-SMT
annealing I-SMT
in O
vacuum O
at O
<nUm> O
° O
C O
, O
which O
is O
attributed O
to O
degassing O
of O
doping O
adsorbates O
. O


the O
electrical B-PRO
resistance I-PRO
measured O
by O
exposing O
the O
films B-DSC
to O
sub-ppm O
NO2 O
concentrations O
( O
<nUm> O
ppb O
in O
air O
) O
at O
<nUm> O
° O
C O
was O
found O
to O
decrease O
. O


the O
obtained O
results O
demonstrate O
that O
nanotubes B-DSC
could O
find O
use O
as O
sensitive B-APL
chemical I-APL
gas I-APL
sensor I-APL
for O
the O
fast O
response O
accompanied O
by O
a O
high O
sensitivity O
to O
sub-ppm O
NO2 O
exposure O
; O
the O
precise O
recover O
of O
the O
base O
resistance B-PRO
value O
in O
absence O
of O
NO2 O
at O
a O
fixed O
operating O
temperature O
likewise O
indicate O
that O
intrinsic O
properties O
measured O
on O
as-prepared B-DSC
nanotubes I-DSC
may O
be O
severely O
changed O
by O
extrinsic O
oxidative B-SMT
treatment I-SMT
effects O
. O


formation O
and O
properties O
of O
Ti B-MAT
- O
based O
Ti B-MAT
– I-MAT
Zr I-MAT
– I-MAT
Cu I-MAT
– I-MAT
Fe I-MAT
– I-MAT
Sn I-MAT
– I-MAT
Si I-MAT
bulk B-PRO
metallic I-PRO
glasses I-PRO
with O
different O
( B-PRO
Ti I-PRO
+ I-PRO
Zr I-PRO
) I-PRO
/ I-PRO
Cu I-PRO
ratios I-PRO
for O
biomedical B-APL
application I-APL


Ti B-MAT
- O
based O
Ti B-MAT
– I-MAT
Zr I-MAT
– I-MAT
Cu I-MAT
– I-MAT
Fe I-MAT
– I-MAT
Sn I-MAT
– I-MAT
Si I-MAT
bulk B-PRO
metallic I-PRO
glasses I-PRO
( O
BMGs B-PRO
) O
free O
from O
highly O
toxic O
elements O
Ni B-MAT
and O
Be B-MAT
were O
developed O
as O
promising O
biomaterials B-APL
. O


the O
influence O
of O
( B-PRO
Ti I-PRO
+ I-PRO
Zr I-PRO
) I-PRO
/ I-PRO
Cu I-PRO
ratio I-PRO
on O
glass B-DSC
- O
formation O
, O
thermal B-PRO
stability I-PRO
, O
mechanical B-PRO
properties I-PRO
, O
bio-corrosion B-PRO
resistance I-PRO
, O
surface B-PRO
wettability I-PRO
and O
biocompatibility B-PRO
were O
investigated O
. O


In O
the O
present O
Ti B-MAT
- O
based O
BMG B-PRO
system O
, O
the O
Cu80Fe5Si2Sn4Ti94Zr15 B-MAT
glassy B-DSC
alloy I-DSC
exhibited O
the O
highest O
glass B-PRO
forming I-PRO
ability I-PRO
( O
GFA B-PRO
) O
corresponding O
to O
the O
largest O
supercooled B-SMT
liquid O
region O
, O
and O
a O
glassy B-DSC
rod I-DSC
with O
a O
critical B-PRO
diameter I-PRO
of O
<nUm> O
mm O
was O
prepared O
by O
copper B-MAT
- O
mold B-SMT
casting I-SMT
. O


the O
Ti B-MAT
- O
based O
BMGs B-PRO
possess O
high O
compressive B-PRO
strength I-PRO
of O
<nUm> O
– O
<nUm> O
MPa O
and O
microhardness B-PRO
of O
<nUm> O
– O
<nUm> O
hv O
. O


young B-PRO
's I-PRO
modulus I-PRO
of O
the O
Cu80Fe5Si2Sn4Ti94Zr15 B-MAT
glassy B-DSC
alloy I-DSC
was O
about O
<nUm> O
GPa O
, O
which O
is O
slightly O
lower O
than O
that O
of O
Ti B-MAT
– I-MAT
6Al I-MAT
– I-MAT
4V I-MAT
alloy B-DSC
. O


the O
Cu80Fe5Si2Sn4Ti94Zr15 B-MAT
glassy B-DSC
alloy I-DSC
with O
high O
GFA B-PRO
exhibited O
high O
bio-corrosion B-PRO
resistance I-PRO
, O
and O
good O
surface B-PRO
hydrophilia I-PRO
and O
cytocompatibility B-PRO
. O


the O
mechanisms O
for O
glass O
formation O
as O
well O
as O
the O
effect O
of O
( B-PRO
Ti I-PRO
+ I-PRO
Zr I-PRO
) I-PRO
/ I-PRO
Cu I-PRO
ratio I-PRO
on O
bio-corrosion B-PRO
behavior O
and O
biocompatibility B-PRO
are O
discussed O
. O


photoluminescence B-CMT
properties O
and O
energy B-PRO
- I-PRO
transfer I-PRO
of O
thermal B-PRO
- I-PRO
stable I-PRO
ce3+ O
, O
mn2+ O
- O
codoped B-DSC
barium B-MAT
strontium I-MAT
lithium I-MAT
silicate I-MAT
red B-APL
phosphors I-APL


A O
series O
of O
thermal B-PRO
- I-PRO
stable I-PRO
ce3+ O
, O
mn2+ O
- O
codoped B-DSC
barium B-MAT
strontium I-MAT
lithium I-MAT
silicate I-MAT
( O
BSLS B-MAT
) O
phosphors B-APL
was O
synthesized O
by O
a O
high B-SMT
- I-SMT
temperature I-SMT
solid I-SMT
- I-SMT
state I-SMT
reaction I-SMT
. O


the O
XRD B-CMT
patterns O
of O
this O
phosphor B-APL
seem O
to O
be O
a O
new O
phase O
that O
has O
not O
been O
reported O
before O
. O


BSLS B-MAT
: I-MAT
ce3+ I-MAT
, I-MAT
mn2+ I-MAT
showed O
two O
emission O
bands O
under O
<nUm> O
nm O
excitation O
: O
one O
observed O
at O
<nUm> O
nm O
was O
attributed O
to O
ce3+ O
emission O
, O
and O
the O
other O
found O
in O
red O
region O
was O
assigned O
to O
mn2+ O
emission O
through O
ce3+ O
– O
mn2+ O
efficient O
energy O
transfer O
. O


the O
mn2+ O
emission O
shifted O
red O
along O
with O
the O
replacement O
of O
barium B-MAT
by O
strontium B-MAT
, O
which O
was O
due O
to O
the O
change O
of O
crystal B-PRO
field I-PRO
. O


A O
composition O
- O
optimized O
phosphor B-APL
, O
BSLS B-MAT
: I-MAT
0.10Ce3+ I-MAT
, I-MAT
0.05Mn2+ I-MAT
( I-MAT
Ba I-MAT
= I-MAT
<nUm> I-MAT
) I-MAT
, O
exhibited O
strong O
and O
broad O
red B-PRO
- I-PRO
emitting I-PRO
and O
supreme O
thermal B-PRO
stability I-PRO
. O


the O
results O
suggest O
that O
this O
phosphor B-APL
is O
suitable O
as O
a O
red B-APL
component I-APL
for O
NUV B-APL
LED I-APL
or O
high B-APL
pressure I-APL
Hg I-APL
vapor I-APL
( I-APL
HPMV I-APL
) I-APL
lamp I-APL
. O


investigation O
of O
chromium B-MAT
impurities O
charge B-PRO
state I-PRO
and O
chemical B-PRO
bonds I-PRO
in O
PLZT B-MAT
ceramic B-DSC


the O
results O
of O
the O
first O
observation O
of O
207Pb O
NMR B-CMT
spectra O
both O
in O
pure B-DSC
PLZT B-MAT
and O
doped B-DSC
by O
chromium B-MAT
are O
reported O
. O


the O
observed O
NMR B-CMT
spectra O
peculiarities O
were O
shown O
to O
be O
dependent O
on O
lanthanum B-MAT
and O
chromium B-MAT
content O
, O
and O
connected O
with O
a O
distribution O
of O
chemical B-PRO
shift I-PRO
tensor I-PRO
values O
and O
their O
principal O
axis O
directions O
. O


the O
ESR B-CMT
spectra O
were O
measured O
in O
PLZT B-MAT
with O
Cr B-MAT
for O
the O
first O
time O
. O


the O
spectra O
were O
shown O
to O
be O
those O
of O
cr3+ O
, O
cr5+ O
and O
ti3+ O
their O
intensities O
being O
dependent O
on O
the O
La B-MAT
content O
. O


it O
was O
shown O
that O
with O
increasing O
La B-MAT
concentration O
the O
reduction O
of O
cr5+ O
to O
cr3+ O
and O
disappearance O
of O
ti3+ O
took O
place O
. O


the O
relative O
intensity O
of O
cr3+ O
and O
cr5+ O
in O
the O
ESR B-CMT
spectra O
was O
supposed O
to O
be O
proportional O
to O
the O
volume O
of O
PZT B-MAT
regions O
in O
PLZT B-MAT
samples O
. O


it O
follows O
both O
from O
ESR B-CMT
and O
NMR B-CMT
measurements O
that O
for O
lanthanum B-PRO
concentrations I-PRO
higher O
than O
<nUm> O
% O
there O
are O
no O
local O
PZT B-MAT
regions O
in O
PLZT B-MAT
. O


the O
role O
of O
the O
obtained O
data O
for O
the O
appearance O
of O
dipole B-PRO
glass I-PRO
state I-PRO
is O
discussed O
. O


preparation O
of O
Ag B-MAT
- O
doped B-DSC
mesoporous I-DSC
titania B-MAT
and O
its O
enhanced O
photocatalytic B-PRO
activity I-PRO
under O
UV O
light O
irradiation O


Ag B-MAT
- O
doped B-DSC
mesoporous I-DSC
titania B-MAT
was O
synthesized O
via O
a O
combined O
sol B-SMT
– I-SMT
gel I-SMT
process O
with O
surfactant B-SMT
- I-SMT
assisted I-SMT
templating I-SMT
method O
using O
cetyltrimethyl O
ammonium O
bromide O
( O
CTAB O
) O
as O
the O
structure O
- O
directing O
agent O
. O


the O
prepared O
samples O
were O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
, O
N B-CMT
adsorption I-CMT
– I-CMT
desorption I-CMT
measurements I-CMT
( O
BET B-CMT
) O
and O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
. O


the O
photocatalytic B-PRO
activity I-PRO
of O
the O
samples O
was O
determined O
by O
degradation O
of O
model O
contaminant O
water O
of O
phenol O
in O
aqueous O
solution O
. O


results O
showed O
that O
different O
amounts O
of O
Ag B-MAT
- O
doping B-SMT
had O
different O
effects O
on O
the O
crystal B-PRO
phase I-PRO
structure I-PRO
and O
photocatalytic B-PRO
activity I-PRO
of O
the O
samples O
. O


the O
sample O
with O
<nUm> O
% O
Ag B-MAT
doping B-SMT
shows O
the O
highest O
photocatalytic B-PRO
activity I-PRO
, O
which O
is O
<nUm> O
times O
that O
of O
the O
undoped B-DSC
mesoporous I-DSC
titania B-MAT
. O


multiplicity O
of O
photoluminescence B-CMT
in O
raman B-CMT
spectroscopy I-CMT
and O
defect B-PRO
chemistry I-PRO
of O
( B-MAT
ba1-x I-MAT
r I-MAT
x I-MAT
)(Ti1-x I-MAT
Ho I-MAT
x I-MAT
)O3 I-MAT
( I-MAT
r I-MAT
= I-MAT
La I-MAT
, I-MAT
Pr I-MAT
, I-MAT
Nd I-MAT
, I-MAT
Sm I-MAT
) I-MAT
dielectric B-APL
ceramics I-APL


( B-MAT
Ba1-xR I-MAT
x)(Ti1-xHo I-MAT
x)O3 I-MAT
( I-MAT
r I-MAT
= I-MAT
La I-MAT
, I-MAT
Pr I-MAT
, I-MAT
Nd I-MAT
, I-MAT
Sm I-MAT
; I-MAT
x I-MAT
≥ I-MAT
<nUm> I-MAT
) I-MAT
( O
BRTH B-MAT
) O
ceramics B-DSC
were O
prepared O
using O
a O
mixed B-SMT
oxides I-SMT
method I-SMT
. O


the O
solubility O
limits O
in O
BRTH B-MAT
with I-MAT
r I-MAT
= I-MAT
La I-MAT
, I-MAT
Pr I-MAT
, I-MAT
Nd I-MAT
, I-MAT
Sm I-MAT
were O
determined O
by O
XRD B-CMT
to O
be O
x O
= O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
, O
respectively O
. O


the O
ionic B-PRO
radius I-PRO
of O
r O
at O
Ti B-MAT
- O
site O
plays O
a O
decisive O
role O
in O
the O
solubility O
limit O
in O
BRTH B-MAT
. O


only O
BRTH B-MAT
with O
r O
= O
La B-MAT
satisfied O
vegard B-CMT
's I-CMT
law I-CMT
. O


the O
multiplicity O
of O
photoluminescence B-CMT
( O
PL B-CMT
) O
signals O
of O
nd3+ O
/ O
ho3+ O
and O
sm3+ O
/ O
ho3+ O
in O
raman B-CMT
scattering I-CMT
under O
532-nm O
excitation O
laser O
and O
the O
high O
- O
permittivity B-PRO
abnormality O
for O
the O
denser O
BRTH B-MAT
with O
r O
= O
Sm B-MAT
and O
at O
x O
= O
<nUm> O
were O
reported O
. O


the O
PL B-CMT
provided O
the O
evidence O
of O
a O
small O
number O
of O
ho3+ O
at O
Ba B-MAT
- O
site O
in O
BRTH B-MAT
and O
it O
was O
determined O
that O
the O
number O
of O
Ba B-MAT
- O
site O
ho3+ O
ions O
increased O
from O
0.05at O
% O
at O
r O
= O
La B-MAT
to O
0.19at O
% O
at O
r O
= O
Sm B-MAT
with O
increasing O
atomic B-PRO
number I-PRO
of O
light O
rare O
earth O
. O


BRTH B-MAT
exhibited O
a O
much O
broadened O
dielectric B-PRO
- I-PRO
temperature I-PRO
characteristics I-PRO
, O
marked O
by O
× O
5T O
, O
× O
6T O
, O
× O
7T O
, O
and O
× O
8S O
dielectric B-PRO
specifications I-PRO
for O
BRTH B-MAT
with I-MAT
r I-MAT
= I-MAT
La I-MAT
, I-MAT
Pr I-MAT
, I-MAT
Nd I-MAT
, I-MAT
Sm I-MAT
and O
at O
x O
= O
<nUm> O
, O
respectively O
, O
and O
they O
exhibited O
lower O
dielectric B-PRO
loss I-PRO
( O
tan B-PRO
δ I-PRO
< O
<nUm> O
) O
at O
room O
temperature O
. O


the O
dielectric B-PRO
- I-PRO
peak I-PRO
temperature I-PRO
( O
Tm B-PRO
) O
of O
BRTH B-MAT
decreased O
linearly O
at O
a O
rate O
of O
less O
than O
− O
<nUm> O
° O
C O
/ O
% O
( O
r O
/ O
Ho O
) O
. O


the O
defect B-PRO
chemistry I-PRO
, O
solubility B-PRO
limit I-PRO
, O
lower O
dielectric B-PRO
loss I-PRO
, O
and O
dielectric B-PRO
abnormality I-PRO
are O
discussed O
. O


effects O
of O
solvent O
and O
chelating O
agent O
on O
synthesis O
of O
solid B-APL
oxide I-APL
fuel I-APL
cell I-APL
perovskite B-SPL
, O
La0.8Sr0.2CrO3-d B-MAT


effects O
of O
solvent O
and O
chelating O
agent O
on O
synthesis O
of O
La0.8Sr0.2CrO3-d B-MAT
perovskite B-SPL
are O
reported O
. O


samples O
are O
synthesized O
using O
a O
solvent O
( O
ethylene O
glycol O
or O
2-methoxyethanol O
) O
and O
a O
chelating O
agent O
( O
acetylacetone O
, O
citric O
acid O
or O
ethylene O
diamine O
tetraacetic O
acid O
) O
by O
polymeric B-SMT
- I-SMT
gel I-SMT
method I-SMT
, O
and O
characterized O
by O
x-ray B-CMT
diffractometry I-CMT
and O
fourier B-CMT
- I-CMT
transform I-CMT
infrared I-CMT
spectroscopy I-CMT
. O


citric O
acid O
to O
metal O
cations O
molar O
ratio O
( O
rc O
) O
is O
varied O
for O
ethylene O
glycol O
– O
citric O
acid O
system O
. O


samples O
are O
mainly O
orthorhombic B-SPL
perovskite I-SPL
. O


CrO4Sr B-MAT
is O
appeared O
as O
a O
secondary O
phase O
and O
found O
to O
be O
the O
lowest O
for O
ethylene O
glycol O
– O
citric O
acid O
combination O
with O
rc O
equal O
to O
<nUm> O
. O


crystallographic B-PRO
parameters I-PRO
of O
perovskite B-SPL
phase O
are O
determined O
and O
compared O
with O
those O
of O
CrLaO3 B-MAT
. O


A O
mechanism O
employing O
a O
partial B-CMT
- I-CMT
charge I-CMT
model I-CMT
, O
chelating O
effect O
and O
solvent O
- O
cage O
effect O
is O
proposed O
to O
explain O
the O
results O
. O


effect O
of O
sintering B-SMT
temperature O
on O
phase O
, O
relative B-PRO
density I-PRO
and O
morphology B-PRO
of O
samples O
prepared O
using O
ethylene O
glycol O
and O
citric O
acid O
( O
rc O
= O
<nUm> O
) O
is O
also O
reported O
. O


the O
influence O
of O
chromium B-MAT
on O
the O
defect B-PRO
structure I-PRO
and O
their O
mobility B-PRO
in O
nonstoichiometric B-DSC
cobaltous B-MAT
oxide I-MAT


defect B-PRO
structure I-PRO
and O
the O
mobility B-PRO
of I-PRO
point I-PRO
defects I-PRO
in O
pure B-DSC
metal B-PRO
deficient I-PRO
cobalt B-MAT
oxide I-MAT
( O
Co1-yO B-MAT
) O
and O
in O
Co1-yO B-MAT
– I-MAT
Cr2O3 I-MAT
solid B-DSC
solutions I-DSC
have O
been O
studied O
as O
a O
function O
of O
temperature O
( O
<nUm> O
– O
<nUm> O
K O
) O
and O
oxygen O
pressure O
( O
<nUm> O
– O
<nUm> O
Pa O
) O
using O
microthermogravimetric B-CMT
techniques I-CMT
. O


it O
has O
been O
shown O
that O
the O
predominant O
defects B-PRO
in O
pure O
and O
Cr B-MAT
- O
doped B-DSC
cobaltous B-MAT
oxide I-MAT
are O
singly O
ionized O
cation B-PRO
vacancies I-PRO
, O
and O
<nUm> O
% O
at O
of O
dopant O
is O
high O
enough O
to O
fix O
the O
concentration O
of O
predominant O
defects B-PRO
in O
such O
solid B-DSC
solutions I-DSC
on O
a O
constant O
level O
being O
much O
higher O
than O
in O
pure O
Co1-yO B-MAT
. O


re-equilibration B-CMT
rate I-CMT
measurements I-CMT
have O
demonstrated O
that O
the O
chemical B-PRO
diffusion I-PRO
coefficient I-PRO
and O
thereby O
the O
mobility B-PRO
of I-PRO
point I-PRO
defects I-PRO
in O
pure O
Co1-yO B-MAT
is O
concentration O
independent O
, O
strongly O
suggesting O
that O
in O
spite O
of O
rather O
high O
their O
concentration O
no O
interactions O
and O
clustering O
of O
defects B-PRO
is O
to O
be O
expected O
. O


on O
the O
other O
hand O
, O
in O
Cr B-MAT
- O
doped B-DSC
cobaltous B-MAT
oxide I-MAT
, O
re-equilibration B-CMT
rate I-CMT
measurements I-CMT
have O
shown O
, O
that O
in O
this O
case O
the O
defect B-PRO
structure I-PRO
is O
more O
complicated O
, O
although O
singly O
ionized O
cation B-PRO
vacancies I-PRO
seem O
to O
be O
still O
predominant O
defects B-PRO
. O


MBE B-SMT
growth O
and O
properties O
of O
Fe3(Al,Si) B-MAT
on O
GaAs(100) B-MAT


we O
report O
a O
successful O
epitaxial O
growth O
of O
an O
intermetallic B-PRO
compound O
Fe3(Al,Si) B-MAT
on O
GaAs(100) B-MAT
. O


Fe3(Al,Si) B-MAT
has O
a O
BiF3 B-SPL
( O
DO3 B-SPL
) O
structure O
with O
a O
lattice B-PRO
constant I-PRO
which O
can O
be O
adjusted O
to O
achieve O
a O
perfect O
lattice O
match O
with O
GaAs(100) B-MAT
face O
by O
tuning O
the O
relative O
concentration O
of O
Al B-MAT
to O
Si B-MAT
. O


the O
crystal B-DSC
growth O
was O
carried O
out O
in O
an O
MBE B-SMT
system O
consisting O
of O
dual O
growth O
chambers O
, O
one O
for O
III O
– O
V O
compound O
semiconductors B-PRO
and O
the O
other O
for O
growing O
metals B-PRO
ot O
group O
IV O
like O
Si B-MAT
. O


sharp O
, O
elongated O
streaks O
were O
observed O
in O
the O
reflection B-CMT
high I-CMT
energy I-CMT
electron I-CMT
diffraction I-CMT
( O
RHEED B-CMT
) O
pattern O
after O
the O
deposition O
of O
one O
monolayer B-DSC
( O
ML B-DSC
) O
of O
Fe3(Al,Si) B-MAT
, O
indicating O
the O
attainment O
of O
an O
atomically B-PRO
smooth I-PRO
surface I-PRO
. O


the O
streaky O
RHEED B-CMT
pattern O
sharpened O
further O
until O
a O
<nUm> O
Å O
( O
<nUm> O
MLs O
) O
thickness O
was O
reached O
, O
and O
retained O
similar O
quality O
in O
thicker O
films B-DSC
. O


the O
crystal B-PRO
structure I-PRO
of O
the O
films B-DSC
was O
also O
characterized O
by O
high B-CMT
- I-CMT
resolution I-CMT
x-ray I-CMT
diffraction I-CMT
and O
rutherford B-CMT
backscattering I-CMT
/ O
channeling B-CMT
analysis I-CMT
. O


A O
rocking B-CMT
curve I-CMT
as O
narrow O
as O
<nUm> O
° O
full O
width O
half O
maximum O
along O
( O
<nUm> O
) O
bragg B-CMT
reflection I-CMT
was O
obtained O
for O
an O
Al4Fe29Si7 B-MAT
film B-DSC
<nUm> O
Å O
thick O
. O


formation B-PRO
mechanism I-PRO
and O
synthesis O
of O
Fe B-MAT
– O
CTi B-MAT
/ O
Al2O3 B-MAT
composite B-DSC
by O
ilmenite B-MAT
, O
aluminum B-MAT
and O
graphite B-MAT


Al2O3 B-MAT
/ O
CTi B-MAT
composites B-DSC
are O
used O
as O
cutting B-APL
tools I-APL
for O
machining B-APL
gray O
cast B-MAT
iron I-MAT
and O
steels B-MAT
. O


the O
addition O
of O
iron B-MAT
improves O
the O
toughness B-PRO
of O
Al2O3 B-MAT
/ O
CTi B-MAT
composites B-DSC
. O


ilmenite B-MAT
, O
aluminum B-MAT
and O
graphite B-MAT
can O
be O
used O
to O
produce O
in-situ O
Al2O3 B-MAT
/ O
CTi B-MAT
– O
Fe B-MAT
composites B-DSC
. O


however O
the O
formation B-PRO
mechanism I-PRO
and O
reaction B-PRO
sequences I-PRO
of O
the O
system O
are O
not O
clear O
enough O
. O


therefore O
, O
the O
present O
research O
is O
designed O
to O
determine O
the O
formation B-PRO
mechanism I-PRO
and O
the O
reaction B-PRO
sequences I-PRO
of O
the O
foresaid O
system O
. O


In O
this O
research O
, O
ilmenite B-MAT
was O
synthesized O
to O
prevent O
the O
presence O
of O
impurities O
in O
the O
system O
and O
then O
the O
critical B-PRO
temperatures I-PRO
of O
ilmenite B-MAT
, O
aluminum B-MAT
and O
graphite B-MAT
powder B-DSC
mixture O
were O
determined O
by O
DTA B-CMT
analysis O
. O


the O
milled B-SMT
and O
pressed B-SMT
samples O
, O
prepared O
from O
this O
mixture O
, O
were O
heat B-SMT
treated I-SMT
at O
the O
critical B-PRO
temperatures I-PRO
. O


the O
final O
products O
were O
analyzed O
with O
XRD B-CMT
. O


it O
was O
found O
that O
at O
the O
first O
exothermic B-PRO
peak I-PRO
of O
DTA B-CMT
curve O
( O
<nUm> O
° O
C O
) O
, O
aluminum B-MAT
reacts O
with O
FeO3Ti B-MAT
, O
forming O
Fe B-MAT
, O
O2Ti B-MAT
, O
Al2O3 B-MAT
and O
Al5Fe2 B-MAT
. O


further O
increase O
in O
the O
temperature O
, O
up O
to O
<nUm> O
° O
C O
, O
results O
not O
only O
in O
the O
transformation O
of O
O2Ti B-MAT
to O
O3Ti2 B-MAT
and O
OTi B-MAT
, O
but O
also O
in O
the O
conversion O
of O
Al5Fe2 B-MAT
to O
AlFe B-MAT
. O


moreover O
, O
titanium B-MAT
carbide I-MAT
will O
also O
be O
formed O
. O


with O
the O
rise O
in O
temperature O
, O
O3Ti2 B-MAT
, O
OTi B-MAT
and O
iron B-MAT
aluminides I-MAT
disappear O
and O
CTi B-MAT
, O
Al2O3 B-MAT
and O
Fe B-MAT
will O
be O
the O
final O
compounds O
. O


band B-CMT
offset I-CMT
calculations I-CMT
of O
SZn B-MAT
x I-MAT
se1-x I-MAT
/ O
SZn B-MAT
y I-MAT
se1-y I-MAT
heterostructures B-DSC


In O
order O
to O
design O
devices O
based O
on O
II O
– O
VI O
materials O
, O
it O
is O
necessary O
to O
know O
the O
potential O
across O
the O
interface B-DSC
between O
two O
materials O
. O


following O
our O
recent O
calculations O
which O
prove O
that O
the O
band B-PRO
gap I-PRO
energy I-PRO
of O
ZnSxSe1-x B-MAT
alloy B-DSC
has O
a O
nonlinear O
behaviour O
versus O
the O
sulphur B-PRO
composition I-PRO
x O
, O
it O
appears O
that O
an O
accurate O
knowledge O
of O
band B-PRO
offsets I-PRO
for O
ZnSxSe1-x B-MAT
/ O
ZnSySe1-y B-MAT
structures O
will O
be O
useful O
to O
model O
devices O
based O
on O
this O
heterostructure B-DSC
. O


on O
the O
basis O
of O
a O
model B-CMT
- I-CMT
solid I-CMT
theory I-CMT
, O
we O
report O
in O
this O
work O
the O
band B-CMT
offset I-CMT
calculations I-CMT
for O
zinc B-SPL
blende I-SPL
pseudomorphically O
strained O
ZnSxSe1-x B-MAT
/ O
ZnSySe1-y B-MAT
interface B-DSC
. O


from O
the O
results O
obtained O
, O
we O
have O
calculated O
the O
band B-PRO
gap I-PRO
energies I-PRO
of O
ZnSxSe1-x B-MAT
layers B-DSC
pseudomorphically O
strained O
on O
ZnSySe1-y B-MAT
substrate B-DSC
as O
a O
function O
of O
compositions B-PRO
x O
and O
y O
in O
the O
whole O
range O
<nUm> O
≤ O
x,y O
≤ O
<nUm> O
. O


also O
, O
the O
band B-PRO
gaps I-PRO
of O
bulk B-DSC
ZnSxSe1-x B-MAT
deposed O
on O
ZnSySe1-y B-MAT
for O
several O
values O
of O
y O
have O
been O
calculated O
versus O
the O
sulphur O
content O
x O
. O


analytical O
formulas O
fitting O
these O
bands O
have O
been O
obtained O
. O


In O
view O
of O
the O
lack O
of O
theoretical O
calculations O
, O
our O
results O
seem O
likely O
to O
be O
useful O
especially O
in O
the O
design O
of O
ZnSxSe1-x B-MAT
structures O
for O
optoelectronic B-APL
devices I-APL
applications I-APL
. O


synthesis O
, O
structure B-PRO
, O
and O
magnetic B-PRO
properties I-PRO
of O
M-W O
hexaferrite B-MAT
composites B-DSC


Ca-Co-Mn-Zn B-MAT
- O
doped B-DSC
Sr B-MAT
- I-MAT
hexaferrites I-MAT
with O
a O
cation B-PRO
composition I-PRO
of O
Sr0.7Ca0.3Fen-0.6Co0.2Mn0.2Zn0.2 B-MAT
were O
prepared O
using O
conventional O
solid B-SMT
- I-SMT
state I-SMT
reaction I-SMT
processes O
by O
varying O
Fe B-MAT
contents O
( O
<nUm> O
≤ O
n O
≤ O
<nUm> O
) O
. O


the O
hexaferrite B-MAT
sample O
with O
an O
Fe B-MAT
content O
of O
<nUm> O
≤ O
n O
≤ O
<nUm> O
exhibited O
composite B-DSC
phases O
of O
m O
- O
type O
and O
W O
- O
type O
hexaferrite B-MAT
on O
calcining B-SMT
at O
<nUm> O
° O
C O
in O
air O
while O
the O
samples O
calcined B-SMT
at O
<nUm> O
° O
C O
in O
air O
exhibited O
only O
the O
m O
- O
type O
phase O
. O


the O
sample O
with O
n O
= O
<nUm> O
exhibited O
a O
saturation B-PRO
magnetization I-PRO
( O
MS B-PRO
) O
of O
<nUm> O
, O
<nUm> O
, O
<nUm> O
emu O
/ O
g O
after O
performing O
calcination B-SMT
at O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
° O
C O
, O
respectively O
. O


MS B-PRO
higher O
than O
that O
of O
the O
non-doped B-DSC
m O
- O
type O
Sr B-MAT
- I-MAT
hexaferrite I-MAT
( O
~ O
<nUm> O
emu O
/ O
g O
) O
sample O
is O
attributed O
to O
the O
volume O
portion O
of O
the O
high-MS B-PRO
W O
- O
type O
phase O
. O


it O
is O
also O
revealed O
that O
the O
co-doping B-SMT
of O
Ca B-MAT
, O
Co B-MAT
, O
and O
Zn B-MAT
is O
crucial O
for O
the O
formation O
of O
the O
W O
- O
type O
phase O
in O
the O
sample O
calcined B-SMT
at O
<nUm> O
° O
C O
in O
air O
. O


novel O
powellite B-MAT
- O
based O
red B-APL
- I-APL
emitting I-APL
phosphors I-APL
: O
CaLa1- B-MAT
x I-MAT
MoNbO8 I-MAT
: I-MAT
xEu3+ I-MAT
for O
white B-APL
light I-APL
emitting I-APL
diodes I-APL


we O
report O
the O
photoluminescence B-CMT
properties O
of O
a O
novel O
powellite B-MAT
- O
based O
red B-APL
- I-APL
emitting I-APL
phosphor I-APL
material O
: O
CaLa1-xNbMoO8 B-MAT
: I-MAT
xEu3+ I-MAT
( I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
) I-MAT
for O
the O
first O
time O
. O


the O
photoluminescence B-CMT
investigations O
indicated O
that O
CaLa1-xNbMoO8 B-MAT
: I-MAT
xEu3+ I-MAT
emits O
strong O
red O
light O
at O
<nUm> O
nm O
originating O
from O
5D0-7F2 O
( O
electric O
dipole O
transition O
) O
under O
excitation O
either O
into O
the O
5L0 O
state O
with O
<nUm> O
nm O
or O
the O
5D2 O
state O
with O
<nUm> O
nm O
, O
that O
correspond O
to O
the O
two O
popular O
emission O
lines O
from O
near-UV O
and O
blue B-APL
LED I-APL
chips I-APL
, O
respectively O
. O


when O
compared O
with O
emission B-PRO
intensity I-PRO
from O
a O
CaMoO4 B-MAT
: I-MAT
eu3+ I-MAT
, O
the O
emission O
from O
CaLaMoNbO8 B-MAT
: I-MAT
eu3+ I-MAT
showed O
greater O
intensity O
values O
under O
the O
same O
excitation O
wavelength O
( O
<nUm> O
nm O
) O
. O


the O
enhanced O
red B-PRO
emission I-PRO
is O
attributed O
to O
the O
enhanced O
f B-PRO
– I-PRO
f I-PRO
absorption I-PRO
of O
eu3+ O
. O


these O
materials O
could O
be O
promising O
red B-APL
phosphors I-APL
for O
use O
in O
generating O
white O
light O
in O
phosphor-converted B-APL
white I-APL
light I-APL
emitting I-APL
diodes I-APL
( O
WLEDs B-APL
) O
. O


structural- B-PRO
and O
optical B-PRO
- I-PRO
properties I-PRO
analysis O
of O
single B-DSC
crystalline I-DSC
hematite B-MAT
( O
a-Fe2O3 B-MAT
) O
nanocubes B-DSC
prepared O
by O
one B-SMT
- I-SMT
pot I-SMT
hydrothermal I-SMT
approach I-SMT


high O
quality O
single B-DSC
crystal I-DSC
hematite B-MAT
( O
a-Fe2O3 B-MAT
) O
nanocubes B-DSC
with O
average O
dimensions O
of O
<nUm> O
nm O
were O
successfully O
synthesized O
by O
a O
facile B-SMT
one I-SMT
- I-SMT
pot I-SMT
hydrothermal I-SMT
method I-SMT
. O


systematic O
analyses O
were O
performed O
to O
investigate O
the O
morphological- B-PRO
, O
structural- B-PRO
and O
optical B-PRO
- I-PRO
properties I-PRO
of O
the O
as-synthesized B-DSC
a-Fe2O3 B-MAT
nanocubes B-DSC
. O


continuous O
formation O
and O
hourly O
monitoring O
towards O
proper O
arrangement O
of O
single B-DSC
crystal I-DSC
a-Fe2O3 B-MAT
nanocubes B-DSC
was O
observed O
throughout O
the O
hydrothermal B-SMT
heating I-SMT
process O
of O
<nUm> O
° O
C O
from O
<nUm> O
h O
to O
<nUm> O
h O
. O


the O
probable O
growth O
mechanism O
on O
the O
formation O
of O
cubic B-SPL
nanostructures B-DSC
is O
also O
proposed O
. O


electron B-CMT
micrographs I-CMT
show O
the O
cubic B-SPL
a-Fe2O3 B-MAT
synthesized O
at O
the O
most O
optimum O
<nUm> O
h O
hydrothermal B-SMT
heating I-SMT
duration O
are O
indeed O
produced O
in O
high O
- O
yield O
with O
a O
well O
- O
defined O
cubical O
shape O
. O


the O
typical O
rhombohedral B-SPL
structure O
of O
cubic B-SPL
a-Fe2O3 B-MAT
was O
evident O
from O
the O
XRD B-CMT
pattern O
. O


the O
SAED B-CMT
pattern O
indicates O
that O
the O
a-Fe2O3 B-MAT
nanocubes B-DSC
are O
single B-DSC
- I-DSC
crystalline I-DSC
in O
nature O
, O
with O
lattice B-PRO
- I-PRO
fringes I-PRO
and O
a O
d-spacing B-PRO
value O
of O
<nUm> O
Å O
. O


the O
optical B-CMT
characterization I-CMT
reveals O
that O
a-Fe2O3 B-MAT
nanocubes B-DSC
show O
strong O
visible B-PRO
- I-PRO
light I-PRO
absorption I-PRO
with O
a O
band B-PRO
gap I-PRO
energy I-PRO
of O
∼ O
<nUm> O
eV O
while O
the O
photoluminescence B-CMT
emission I-CMT
spectra O
depicts O
a O
mono-peak O
centered O
at O
∼ O
<nUm> O
nm O
. O


both O
the O
SAED B-CMT
pattern O
and O
UV B-CMT
- I-CMT
vis I-CMT
spectra I-CMT
show O
a O
strong O
correlation O
with O
the O
standard O
a-Fe2O3 B-MAT
. O


the O
as-synthesized B-DSC
a-Fe2O3 B-MAT
single B-DSC
crystal I-DSC
is O
of O
high O
quality O
that O
potentially O
could O
be O
used O
as O
a O
visible B-APL
- I-APL
light I-APL
active I-APL
nanomaterial I-APL
in O
renewable B-APL
energy I-APL
device I-APL
applications I-APL
. O


strain O
effects O
on O
CaLaMn2O6 B-MAT
thin B-DSC
films I-DSC


thin B-DSC
films I-DSC
of O
CaLaMn2O6 B-MAT
( O
LCMO B-MAT
) O
deposited O
on O
O3SrTi B-MAT
( O
STO B-MAT
) O
with O
orientations B-PRO
( O
<nUm> O
) O
and O
( O
<nUm> O
) O
and O
on O
( O
<nUm> O
) O
GaLaO4Sr B-MAT
( O
SLGO B-MAT
) O
substrates B-DSC
have O
been O
studied O
by O
raman B-CMT
spectroscopy I-CMT
. O


three O
different O
thicknesses O
for O
each O
substrate B-DSC
were O
studied O
at O
room O
temperature O
. O


the O
energy O
and O
the O
width O
of O
the O
Ag B-MAT
tilting B-PRO
mode I-PRO
have O
shown O
thickness O
and O
substrate B-DSC
dependence O
, O
implying O
an O
effect O
of O
the O
lattice B-PRO
mismatch I-PRO
on O
the O
tilting B-PRO
angle I-PRO
. O


low O
temperature O
measurements O
( O
80K O
) O
have O
been O
carried O
out O
at O
different O
scattering O
polarizations O
for O
the O
thicker O
films B-DSC
( O
<nUm> O
nm O
) O
. O


the O
spectra O
of O
LCMO B-MAT
/ O
STO(100) B-MAT
films B-DSC
are O
strongly O
affected O
by O
the O
paramagnetic B-PRO
to O
ferromagnetic B-PRO
( O
FM B-PRO
) O
or O
charge B-PRO
ordered I-PRO
( O
CO B-PRO
) O
antiferromagnetic B-PRO
( O
AF B-PRO
) O
transitions O
. O


the O
jahn B-PRO
– I-PRO
teller I-PRO
( I-PRO
JT I-PRO
) I-PRO
modes I-PRO
gain O
intensity O
close O
to O
the O
transition B-PRO
temperature I-PRO
, O
where O
a O
considerable O
softening O
of O
the O
tilting B-PRO
mode I-PRO
has O
been O
also O
observed O
. O


new O
bands O
appear O
below O
neel B-PRO
temperature I-PRO
( O
TN B-PRO
) O
for O
LCMO B-MAT
/ O
STO(100) B-MAT
, O
while O
this O
transition O
can O
not O
be O
observed O
on O
the O
other O
films B-DSC
. O


A O
possible O
explanation O
is O
the O
phase O
coexistence O
which O
is O
discovered O
at O
the O
FM B-PRO
to O
CO B-PRO
/ O
AF B-PRO
region O
( O
<nUm> O
– O
150K O
) O
for O
LCM B-MAT
/ O
STO(100) B-MAT
films B-DSC
. O


however O
, O
a O
strain O
effect O
seems O
to O
destroy O
the O
FM B-PRO
phase O
on O
contrary O
to O
the O
bulk B-DSC
. O


the O
JT B-PRO
modes I-PRO
do O
not O
appear O
( O
partially O
hidden O
by O
the O
spectrum O
of O
the O
substrate B-DSC
) O
in O
the O
spectra O
of O
LCMO B-MAT
/ O
STO(111) B-MAT
films B-DSC
, O
which O
show O
a O
metallic B-PRO
- I-PRO
like I-PRO
spectrum I-PRO
, O
consistent O
with O
the O
resistivity B-PRO
measurements O
. O


the O
JT B-PRO
distortion I-PRO
appears O
decreased O
in O
LCMO B-MAT
/ O
SLGO(001) B-MAT
films B-DSC
and O
the O
transition B-PRO
temperatures I-PRO
are O
affected O
from O
the O
strains O
. O


nanoindentation B-CMT
and O
nanoscratch B-CMT
investigations O
on O
graphene B-MAT
- O
based O
nanocomposites B-DSC


the O
effect O
of O
graphene B-MAT
nano-platelets B-DSC
( O
GNPs B-MAT
) O
on O
mechanical B-PRO
properties I-PRO
of O
polymer O
nanocomposites B-DSC
were O
investigated O
using O
nanoindentation B-CMT
and O
nanoscratch B-CMT
methods I-CMT
. O


the O
GNPs B-MAT
at O
different O
weight O
fractions O
namely O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
and O
<nUm> O
% O
were O
dispersed O
in O
the O
polymer O
matrix O
using O
a O
mechanical B-CMT
stirrer I-CMT
and O
ultrasonic B-CMT
apparatus I-CMT
. O


A O
standard O
berkovich B-CMT
indenter I-CMT
was O
used O
for O
indentation O
at O
three O
different O
normal O
loads O
, O
i.e. O
, O
<nUm> O
, O
<nUm> O
and O
<nUm> O
mN O
. O


both O
elastic B-PRO
modulus I-PRO
and O
hardness B-PRO
increased O
with O
the O
addition O
of O
<nUm> O
wt O
% O
GNP B-MAT
. O


the O
tribological B-PRO
behavior I-PRO
of O
nanocomposites B-DSC
was O
investigated O
by O
a O
nanoscratch B-CMT
test I-CMT
in O
conjunction O
with O
atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
; O
less O
pile O
ups O
and O
high O
wear B-PRO
resistance I-PRO
were O
observed O
in O
the O
nanocomposites B-DSC
. O


based O
on O
this O
research O
, O
mechanical B-PRO
properties I-PRO
of O
pure O
polymer O
matrix O
are O
improved O
significantly O
with O
addition O
of O
low O
amounts O
of O
the O
graphene B-MAT
nano-platelets B-DSC
. O


relation O
between O
interdiffusion O
and O
polarity B-PRO
for O
MBE B-SMT
growth O
of O
GaN B-MAT
epilayers B-DSC
on O
OZn B-MAT
substrates B-DSC


we O
report O
on O
GaN B-MAT
growth O
on O
Zn B-PRO
- I-PRO
polar I-PRO
OZn B-MAT
substrates B-DSC
using O
plasma B-SMT
- I-SMT
assisted I-SMT
molecular I-SMT
- I-SMT
beam I-SMT
epitaxy I-SMT
( O
P-MBE B-SMT
) O
. O


before O
GaN B-MAT
growth O
, O
OZn B-MAT
substrate B-DSC
annealing B-SMT
conditions O
were O
optimized O
. O


reflection B-CMT
high I-CMT
- I-CMT
energy I-CMT
electron I-CMT
diffraction I-CMT
( O
RHEED B-CMT
) O
patterns O
after O
low O
- O
temperature O
GaN B-MAT
buffer B-DSC
layer I-DSC
annealing B-SMT
changed O
from O
streaky O
to O
spotty O
, O
suggesting O
that O
zinc B-MAT
and O
oxygen O
atoms O
interdiffuse O
from O
the O
OZn B-MAT
substrate B-DSC
into O
the O
GaN B-MAT
epilayer B-DSC
. O


this O
interdiffusion O
results O
in O
a O
mix B-PRO
- I-PRO
polar I-PRO
GaN B-MAT
epilayer B-DSC
. O


In O
situ O
strain O
evolution O
during O
a O
disconnection O
event O
in O
a O
battery B-APL
nanoparticle B-DSC


lithium B-APL
ion I-APL
batteries I-APL
are O
the O
dominant O
form O
of O
energy B-APL
storage I-APL
in O
mobile B-APL
devices I-APL
, O
increasingly O
employed O
in O
transportation B-APL
, O
and O
likely O
candidates O
for O
renewable B-APL
energy I-APL
storage I-APL
and O
integration O
into O
the O
electrical B-APL
grid I-APL
. O


to O
fulfil O
their O
powerful O
potential O
, O
electrodes B-APL
with O
increased O
capacity B-PRO
, O
faster O
charge B-PRO
rates I-PRO
, O
and O
longer O
cycle B-PRO
life I-PRO
must O
be O
developed O
. O


understanding O
the O
mechanics B-PRO
and O
chemistry B-PRO
of O
individual O
nanoparticles B-DSC
under O
in O
situ O
conditions O
is O
a O
crucial O
step O
to O
improving O
performance O
and O
mitigating O
damage O
. O


here O
we O
reveal O
three O
- O
dimensional O
strain O
evolution O
within O
a O
single O
nanoparticle B-DSC
of O
a O
promising O
high B-APL
voltage I-APL
cathode I-APL
material O
, O
Li2Mn3NiO8 B-MAT
, O
under O
in O
situ O
conditions O
. O


the O
particle O
becomes O
disconnected O
during O
the O
second O
charging O
cycle O
. O


this O
is O
attributed O
to O
the O
formation O
of O
a O
cathode B-APL
electrolyte I-APL
interphase B-DSC
layer I-DSC
with O
slow O
ionic B-PRO
conduction I-PRO
. O


the O
three O
- O
dimensional O
strain O
pattern O
within O
the O
particle O
is O
independent O
of O
cell O
voltage O
after O
disconnection O
, O
indicating O
that O
the O
particle O
is O
unable O
to O
redistribute O
lithium B-MAT
within O
its O
volume O
or O
to O
its O
neighbours O
. O


understanding O
the O
disconnection O
process O
at O
the O
single O
particle O
level O
and O
the O
equilibrium O
or O
non-equilibrium O
state O
of O
nanoparticles B-DSC
is O
essential O
to O
improving O
performance O
of O
current O
and O
future O
electrochemical B-APL
energy I-APL
storage I-APL
systems I-APL
. O


enhanced O
corrosion B-PRO
resistance I-PRO
of O
AISI B-MAT
H13 I-MAT
steel I-MAT
treated O
by O
nitrogen B-SMT
plasma I-SMT
immersion I-SMT
ion I-SMT
implantation I-SMT


electrochemical B-CMT
corrosion I-CMT
measurements I-CMT
of O
AISI B-MAT
H13 I-MAT
steel I-MAT
treated O
by O
PIII B-SMT
process O
in O
<nUm> O
% O
( O
wt O
) O
ClNa B-MAT
solution O
were O
investigated O
. O


so O
far O
the O
corrosion B-PRO
behavior I-PRO
of O
AISI B-MAT
H13 I-MAT
steel I-MAT
by O
PIII B-SMT
has O
not O
been O
studied O
. O


the O
electrochemical O
results O
are O
correlated O
with O
the O
surface B-PRO
morphology I-PRO
, O
nitrogen B-PRO
content I-PRO
and O
hardness B-PRO
of O
the O
nitride B-MAT
layer B-DSC
. O


ion B-SMT
implantation I-SMT
of O
nitrogen O
into O
H13 B-MAT
steel I-MAT
was O
carried O
out O
by O
PIII B-SMT
technique O
. O


SEM B-CMT
examination O
revealed O
a O
generalized O
corrosion O
and O
porosity B-PRO
over O
all O
analyzed O
sample O
surfaces B-DSC
. O


penetration O
of O
nitrogen O
reaching O
more O
than O
<nUm> O
mm O
was O
achieved O
at O
<nUm> O
° O
C O
and O
hardness B-PRO
as O
high O
as O
<nUm> O
HV O
( O
factor O
of O
<nUm> O
enhancement O
over O
standard O
tempered B-SMT
and O
annealed B-SMT
H13 B-MAT
) O
was O
reached O
by O
a O
high O
power O
, O
<nUm> O
h O
PIII B-SMT
treatment O
. O


the O
corrosion B-PRO
behavior I-PRO
of O
the O
samples O
was O
studied O
by O
potentiodynamic B-CMT
polarization I-CMT
method O
. O


the O
noblest O
corrosion B-PRO
behavior I-PRO
was O
observed O
for O
the O
samples O
treated O
by O
PIII B-SMT
at O
<nUm> O
° O
C O
, O
during O
<nUm> O
h O
. O


anodic O
branches O
of O
polarization B-PRO
curves O
of O
PIII B-SMT
processed O
samples O
show O
a O
passive O
region O
associated O
with O
the O
formation O
of O
a O
protective O
film B-DSC
. O


the O
passive B-PRO
region I-PRO
current I-PRO
density I-PRO
of O
PIII B-SMT
treated O
H13 B-MAT
samples O
( O
<nUm> O
× O
<nUm> O
− O
<nUm> O
A O
/ O
cm2 O
) O
is O
about O
<nUm> O
times O
lower O
than O
the O
one O
of O
untreated O
specimens O
, O
which O
demonstrates O
the O
higher O
corrosion B-PRO
resistance I-PRO
for O
the O
PIII B-SMT
treated O
H13 B-MAT
samples O
. O


ultrahigh O
ferroelectric B-PRO
response I-PRO
in O
Fe B-MAT
modified O
<nUm> B-MAT
( I-MAT
na1 I-MAT
/ I-MAT
2Bi1 I-MAT
/ I-MAT
2)TiO3-0.05BaTiO3 I-MAT
single B-DSC
crystals I-DSC


single B-DSC
crystals I-DSC
of O
x B-MAT
at I-MAT
% I-MAT
Fe I-MAT
+ I-MAT
<nUm> I-MAT
( I-MAT
na1 I-MAT
/ I-MAT
2Bi1 I-MAT
/ I-MAT
2)TiO3-0.05BaTiO3 I-MAT
( I-MAT
x I-MAT
% I-MAT
-Fe I-MAT
: I-MAT
NBBT5 I-MAT
, I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
and I-MAT
<nUm> I-MAT
) I-MAT
with O
ultrahigh O
ferroelectric B-PRO
response I-PRO
were O
developed O
by O
introducing O
defect O
associations O
. O


the O
very O
large O
field B-PRO
- I-PRO
induced I-PRO
bipolar I-PRO
and O
unipolar B-PRO
strains I-PRO
, O
i.e. O
, O
smax B-PRO
∼ O
<nUm> O
% O
, O
emax B-PRO
/ O
emax B-PRO
∼ O
<nUm> O
pm O
V-1 O
, O
d33 B-PRO
∼ O
<nUm> O
pC O
N-1 O
and O
permittivity B-PRO
tunability I-PRO
∼ O
<nUm> O
% O
, O
demonstrate O
that O
these O
crystals B-DSC
are O
promising O
candidates O
as O
lead B-APL
- I-APL
free I-APL
ferroelectrics I-APL
. O


the O
presence O
of O
ferromagnetic B-PRO
properties I-PRO
further O
provides O
their O
new O
application O
potential O
as O
multiferroic B-APL
materials I-APL
. O


the O
defect B-PRO
chemistry I-PRO
and O
domain B-PRO
structure I-PRO
were O
studied O
systematically O
. O


the O
effects O
of O
microscopic O
defect O
functional O
centers O
on O
macroscopic B-PRO
properties I-PRO
were O
discussed O
in O
detail O
. O


effect O
of O
annealing B-SMT
on O
the O
thermoelectric B-PRO
properties I-PRO
of O
directionally B-SMT
grown I-SMT
Bi10Co9O5Sr10 B-MAT
x I-MAT
ceramics B-DSC


the O
effect O
of O
annealing B-SMT
on O
directionally B-SMT
solidified I-SMT
Bi2Sr2Co1.8Ox B-MAT
ceramic B-DSC
rods I-DSC
has O
been O
studied O
for O
different O
times O
up O
to O
1008h O
. O


microstructure B-PRO
has O
shown O
five O
different O
phases O
in O
the O
as-grown B-DSC
materials O
which O
have O
been O
reduced O
to O
two O
major O
ones O
after O
1008h O
thermal B-SMT
treatment I-SMT
, O
accompanied O
by O
an O
important O
grain O
growth O
. O


these O
microstructural B-PRO
changes O
are O
reflected O
on O
the O
mechanical B-PRO
properties I-PRO
which O
are O
higher O
than O
those O
measured O
in O
the O
as-grown B-DSC
materials O
in O
all O
cases O
. O


moreover O
, O
they O
also O
produce O
an O
important O
decrease O
on O
the O
resistivity B-PRO
and O
increase O
of O
thermopower B-PRO
, O
leading O
to O
a O
raise O
on O
the O
power B-PRO
factor I-PRO
on O
thermally B-SMT
treated I-SMT
samples O
, O
about O
two O
times O
, O
compared O
to O
the O
as-grown B-DSC
samples O
. O


C3Cr7 B-MAT
- O
based O
cermet B-DSC
coating B-APL
deposited O
on O
stainless B-MAT
steel I-MAT
by O
electrospark B-SMT
process I-SMT
: O
structural B-PRO
characteristics I-PRO
and O
corrosion B-PRO
behavior I-PRO


the O
electrospark B-SMT
deposition I-SMT
( O
ESD B-SMT
) O
technique O
has O
been O
successfully O
applied O
to O
deposit O
at O
room O
temperature O
a O
cermet B-DSC
layer I-DSC
of O
C3Cr7 B-MAT
carbide I-MAT
bound O
with O
<nUm> O
wt. O
% O
Cr B-MAT
on O
a O
AISI B-MAT
<nUm> I-MAT
stainless I-MAT
steel I-MAT
substrate B-DSC
. O


it O
has O
been O
possible O
to O
obtain O
a O
fully O
dense B-PRO
, O
uniform O
and O
strong O
adherent O
coating B-APL
layer B-DSC
of O
<nUm> O
– O
30-mm O
thickness O
. O


the O
corrosion B-PRO
properties I-PRO
of O
this O
coating B-APL
system O
have O
been O
evaluated O
in O
ClH O
electrolyte O
by O
conventional O
anodic B-CMT
polarization I-CMT
tests I-CMT
and O
impedance B-CMT
measurements I-CMT
. O


the O
results O
indicate O
an O
exceptional O
resistance O
of O
the O
coating B-APL
to O
both O
general O
and O
localized O
corrosion O
attack O
. O


some O
surface B-PRO
stress I-PRO
relief I-PRO
microcracks I-PRO
formed O
during O
the O
ESD B-SMT
deposit O
cycles O
do O
not O
impair O
the O
corrosion B-PRO
resistance I-PRO
of O
the O
coating B-APL
even O
after O
long O
time O
immersion O
in O
ClH O
. O


synthesis O
of O
nanocrystalline B-DSC
rutile B-SPL


nanocrystalline B-DSC
titanium B-MAT
dioxide I-MAT
( O
O2Ti B-MAT
) O
in O
the O
rutile B-SPL
phase O
has O
been O
obtained O
by O
homogeneous B-SMT
precipitation I-SMT
using O
urea O
and O
Cl2OTi B-MAT
. O


A O
mixture O
of O
urea O
and O
Cl2OTi B-MAT
is O
heated B-SMT
on O
a O
hot O
water O
bath O
at O
<nUm> O
– O
<nUm> O
° O
C O
to O
precipitate O
rutile B-SPL
powders B-DSC
. O


x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
studies O
on O
these O
oven B-SMT
- I-SMT
dried I-SMT
powders B-DSC
indicated O
the O
formation O
of O
single B-DSC
- I-DSC
phase I-DSC
rutile B-SPL
. O


raman B-CMT
scattering I-CMT
experiments O
were O
also O
performed O
to O
confirm O
the O
formation O
of O
the O
rutile B-SPL
phase O
. O


transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
investigations O
revealed O
the O
average O
particle B-PRO
size I-PRO
of O
these O
powders B-DSC
to O
be O
<nUm> O
nm O
. O


preparation O
and O
characterization O
of O
CuInSe2 B-MAT
particles B-DSC
via O
the O
hydrothermal B-SMT
route I-SMT
for O
thin B-APL
- I-APL
film I-APL
solar I-APL
cells I-APL


CuInSe2 B-MAT
powders B-DSC
with O
a O
chalcopyrite B-SPL
structure O
used O
in O
thin B-APL
- I-APL
film I-APL
solar I-APL
cells I-APL
were O
successfully O
prepared O
via O
a O
hydrothermal B-SMT
method I-SMT
at O
low O
temperatures O
within O
short O
durations O
. O


well B-DSC
- I-DSC
crystallized I-DSC
CuInSe2 B-MAT
particles B-DSC
were O
formed O
via O
the O
hydrothermal B-SMT
reaction I-SMT
at O
<nUm> O
° O
C O
for O
1h O
. O


the O
concentrations O
of O
stabilizer O
, O
triethanolamine O
( O
TEA O
) O
, O
significantly O
affected O
the O
purity B-PRO
, O
morphology B-PRO
and O
particle B-PRO
sizes I-PRO
of O
the O
prepared O
powders B-DSC
. O


increasing O
the O
reaction O
duration O
and O
temperatures O
led O
to O
decrease O
the O
amount O
of O
second O
phase O
H3InO3 B-MAT
and O
resulted O
in O
the O
formation O
of O
pure O
CuInSe2 B-MAT
. O


densified B-SMT
CuInSe2 B-MAT
thin B-DSC
films I-DSC
were O
prepared O
from O
ink B-SMT
printing I-SMT
with O
the O
addition O
of O
the O
flux O
. O


increasing O
the O
selenization B-SMT
temperatures O
increased O
the O
grain B-PRO
size I-PRO
and O
improved O
the O
crystallinity B-PRO
of O
CuInSe2 B-MAT
films B-DSC
. O


magnetic B-PRO
properties I-PRO
of O
RERu2Si2 B-MAT
( I-MAT
RE I-MAT
= I-MAT
Pr I-MAT
, I-MAT
Nd I-MAT
, I-MAT
Gd I-MAT
, I-MAT
Tb I-MAT
, I-MAT
Dy I-MAT
, I-MAT
Er I-MAT
) I-MAT
interm B-PRO
etallics I-PRO


neutron B-CMT
diffraction I-CMT
and O
magnetometric B-CMT
measurements I-CMT
on O
polycrystalline B-DSC
samples O
of O
( B-MAT
Pr I-MAT
, I-MAT
Nd I-MAT
, I-MAT
Gd I-MAT
, I-MAT
Tb I-MAT
, I-MAT
Dy I-MAT
, I-MAT
Er)Ru2Si2 I-MAT
compounds O
were O
performed O
in O
the O
temperature O
range O
between O
<nUm> O
and O
<nUm> O
K O
. O


all O
compounds O
have O
the O
tetragonal B-SPL
, O
Cr2Si2Th B-SPL
- O
type O
crystal B-PRO
structure I-PRO
. O


In O
( B-MAT
Pr I-MAT
, I-MAT
Nd)Ru2Si2 I-MAT
ferromagnetic B-PRO
ordering I-PRO
within O
the O
Pr B-MAT
and O
Nd B-MAT
sublattices O
is O
observed O
at O
low O
temperatures O
. O


the O
magnetic B-PRO
moment I-PRO
is O
parallel O
to O
the O
c-axis O
. O


for O
( B-MAT
Tb I-MAT
, I-MAT
Dy I-MAT
, I-MAT
Er)Ru2Si2 I-MAT
the O
magnetic B-PRO
spin I-PRO
alignment I-PRO
is O
of O
a O
linear O
transverse O
wave O
mode O
. O


this O
static B-PRO
moment I-PRO
wave I-PRO
is O
propagating O
along O
the O
b-axis O
with O
τ B-PRO
= O
[0,t,0] O
and O
is O
polarized O
in O
the O
c-axis O
for O
Ru2Si2Tb B-MAT
and O
DyRu2Si2 B-MAT
and O
in O
the O
b-axis O
for O
ErRu2Si2 B-MAT
. O


the O
observed O
magnetic B-PRO
ordering I-PRO
schemes O
are O
discussed O
in O
terms O
of O
isotropic O
RKKY B-PRO
exchange I-PRO
interactions I-PRO
. O


synthesis O
and O
characterization O
of O
lead B-MAT
iron I-MAT
tungstate I-MAT
ceramics B-DSC
obtained O
by O
two O
preparation O
methods O


lead B-MAT
iron I-MAT
tungstate I-MAT
( O
Pb(Fe B-MAT
<nUm> I-MAT
<nUm> I-MAT
W I-MAT
<nUm> I-MAT
<nUm> I-MAT
)O3 I-MAT
) O
is O
difficult O
to O
sinter B-SMT
as O
a O
single B-DSC
phase I-DSC
perovskite B-SPL
ceramic B-DSC
. O


side O
reactions O
lead O
to O
undesirable O
second O
phases O
damaging O
the O
dielectric B-PRO
properties I-PRO
of O
the O
sintered B-SMT
material O
. O


understanding O
these O
reaction O
routes O
is O
necessary O
to O
eliminate O
them O
and O
to O
improve O
on O
the O
properties O
of O
these O
ceramics B-DSC
. O


lead B-MAT
iron I-MAT
tungstate I-MAT
ceramics B-DSC
were O
sintered B-SMT
from O
powders B-DSC
prepared O
by O
reaction O
of O
mixtures O
of O
the O
three O
oxides B-MAT
, O
or O
by O
reaction O
of O
prereacted O
iron B-MAT
oxide I-MAT
and O
tungsten B-MAT
oxide I-MAT
with O
lead B-MAT
oxide I-MAT
, O
in O
an O
attempt O
to O
control O
the O
formation O
of O
the O
perovskite B-SPL
phase O
. O


the O
reaction O
sequences O
, O
different O
in O
both O
cases O
, O
lead O
to O
a O
higher O
yield O
of O
the O
perovskite B-SPL
phase O
when O
the O
prereacted O
powders B-DSC
were O
used O
, O
avoiding O
therefore O
the O
presence O
of O
undesirable O
phases O
. O


the O
microstructures B-PRO
and O
dielectric B-PRO
properties I-PRO
of O
the O
sintered B-SMT
ceramics B-DSC
obtained O
by O
both O
methodologies O
are O
reported O
and O
compared O
. O


the O
prereacted B-SMT
intermediate I-SMT
phase I-SMT
method I-SMT
leads O
to O
a O
more O
ordered O
perovskite B-SPL
structure O
with O
better O
dielectric B-PRO
characteristics I-PRO
. O


tungsten B-MAT
silicide I-MAT
formation O
by O
multipulse B-SMT
excimer I-SMT
laser I-SMT
irradiation I-SMT


the O
formation O
of O
tungsten B-MAT
silicide I-MAT
induced O
by O
ClXe B-SMT
laser I-SMT
irradiation I-SMT
of O
W(150 B-MAT
nm O
) O
/ O
Si B-MAT
and O
W(500 B-MAT
nm O
) O
/ O
Si B-MAT
samples O
was O
studied O
at O
laser O
fluences O
ranging O
from O
<nUm> O
to O
<nUm> O
J O
/ O
cm2 O
. O


up O
to O
<nUm> O
subsequent O
laser O
pulses O
were O
directed O
to O
the O
same O
irradiation B-SMT
site O
. O


after O
irradiation B-SMT
the O
samples O
were O
examined O
by O
different O
diagnostic O
techniques O
: O
rutherford B-CMT
backscattering I-CMT
spectroscopy I-CMT
, O
x-ray B-CMT
scattering I-CMT
, O
resistometry B-CMT
and O
surface B-CMT
profilometry I-CMT
. O


complete O
reaction O
of O
the O
<nUm> O
nm O
W B-MAT
film B-DSC
with O
silicon B-MAT
was O
obtained O
between O
<nUm> O
and O
<nUm> O
laser O
pulses O
at O
the O
fluence O
of O
<nUm> O
J O
/ O
cm2 O
, O
and O
after O
<nUm> O
laser O
pulses O
and O
at O
the O
fluence O
of O
<nUm> O
J O
/ O
cm2 O
. O


the O
sheet B-PRO
resistance I-PRO
of O
these O
silicides B-MAT
was O
<nUm> O
– O
<nUm> O
Ω O
. O


At O
the O
used O
fluences O
, O
only O
the O
onset O
of O
silicide B-MAT
synthesis O
at O
the O
W-Si B-MAT
interface B-DSC
was O
observed O
for O
the O
<nUm> O
nm O
W B-MAT
film B-DSC
. O


numerical O
computations O
of O
the O
evolution O
and O
depth B-CMT
profiles I-CMT
of O
the O
temperature O
in O
the O
samples O
as O
a O
consequence O
of O
a O
laser O
pulse O
were O
performed O
and O
compared O
to O
the O
experimental O
results O
. O


recovery O
of O
cold B-SMT
- I-SMT
work I-SMT
in O
extruded B-SMT
Zr B-MAT
- I-MAT
<nUm> I-MAT
wt I-MAT
% I-MAT
Nb I-MAT


x-ray B-CMT
line I-CMT
broadening I-CMT
measurements O
and O
electron B-CMT
microscopy I-CMT
have O
been O
used O
to O
characterize O
the O
dislocation B-PRO
substructures I-PRO
in O
extruded B-SMT
, O
cold B-SMT
- I-SMT
worked I-SMT
and O
stress B-PRO
relieved O
Zr B-MAT
- I-MAT
<nUm> I-MAT
wt I-MAT
% I-MAT
Nb I-MAT
pressure B-SMT
tube I-SMT
materials O
. O


variation O
in O
dislocation B-PRO
substructure I-PRO
deduced O
from O
the O
x-ray B-CMT
line I-CMT
broadening I-CMT
measurements O
give O
good O
agreement O
with O
thin B-DSC
film I-DSC
observations O
. O


recovery O
of O
cold B-SMT
- I-SMT
work I-SMT
occurs O
in O
three O
“ O
stages O
” O
in O
Zr B-MAT
- I-MAT
<nUm> I-MAT
wt I-MAT
% I-MAT
Nb I-MAT
. O


between O
<nUm> O
and O
<nUm> O
K O
the O
dislocation B-PRO
density I-PRO
decreases O
from O
≈ O
<nUm> O
– O
<nUm> O
× O
<nUm> O
m-2 O
to O
≈ O
<nUm> O
– O
<nUm> O
× O
<nUm> O
m-2 O
with O
little O
change O
in O
sub-grain B-PRO
size I-PRO
or O
dislocation B-PRO
arrangement I-PRO
below O
<nUm> O
K O
. O


from O
<nUm> O
K O
to O
<nUm> O
K O
the O
sub-grain B-PRO
size I-PRO
increases O
from O
〈 O
<nUm> O
nm O
to O
≈ O
<nUm> O
nm O
while O
the O
dislocation B-PRO
density I-PRO
decreases O
slowly O
to O
≈ O
<nUm> O
– O
<nUm> O
× O
<nUm> O
m-2 O
. O


above O
<nUm> O
K O
the O
sub-grain B-PRO
size I-PRO
increases O
to O
800 O
nm O
, O
some O
grain O
growth O
occurs O
and O
only O
a O
few O
well O
defined O
dislocation B-PRO
networks I-PRO
remain O
. O


as-extruded B-SMT
Zr B-MAT
- I-MAT
<nUm> I-MAT
wt I-MAT
% I-MAT
Nb I-MAT
has O
a O
sub-grain B-PRO
size I-PRO
of O
≈ O
<nUm> O
nm O
and O
a O
dislocation B-PRO
density I-PRO
of O
≈ O
<nUm> O
× O
<nUm> O
m O
− O
<nUm> O
. O


the O
implications O
of O
the O
measurements O
are O
discussed O
. O


piezoresistance B-PRO
in O
n-channel B-APL
inversion I-APL
layers I-APL
of O
Si B-MAT
MOSFET B-APL
's I-APL


the O
piezoresistance B-PRO
effect I-PRO
in O
n-channel B-APL
inversion I-APL
layers I-APL
of O
metal B-APL
- I-APL
oxide I-APL
- I-APL
semiconductor I-APL
field I-APL
- I-APL
effect I-APL
transistors I-APL
( O
MOSFET B-APL
's I-APL
) O
has O
been O
studied O
using O
a O
diaphragm O
and O
a O
beam O
as O
a O
function O
of O
strain O
, O
gate O
voltage O
, O
crystallographic B-PRO
direction I-PRO
and O
temperature O
. O


the O
experimental O
results O
are O
compared O
with O
a O
self B-CMT
- I-CMT
consistent I-CMT
calculation I-CMT
based O
on O
the O
surface B-CMT
quantization I-CMT
and O
the O
deformation B-CMT
potential I-CMT
theory I-CMT
. O


it O
can O
be O
concluded O
that O
the O
main O
feature O
is O
explained O
by O
electron O
repopulation O
among O
valleys O
caused O
by O
the O
strain O
- O
induced O
subband B-PRO
energy I-PRO
change O
. O


the O
polarity B-PRO
change O
in O
the O
transverse B-PRO
piezoresistivity I-PRO
is O
found O
in O
the O
larger O
gate O
voltage O
region O
at O
low O
temperatures O
. O


this O
fact O
is O
a O
remarkably O
departure O
from O
the O
calculated O
results O
based O
on O
the O
repopulation O
effect O
. O


it O
can O
be O
concluded O
that O
this O
polarity B-PRO
change O
is O
due O
to O
the O
relaxation B-PRO
time I-PRO
anisotropy I-PRO
related O
to O
the O
intervalley B-PRO
scattering I-PRO
. O


growth O
and O
holographic B-PRO
storage I-PRO
properties I-PRO
of O
In B-MAT
: I-MAT
Ce I-MAT
: I-MAT
Cu I-MAT
: I-MAT
LiNbO3 I-MAT
crystal B-DSC


A O
series O
of O
In B-MAT
: I-MAT
Ce I-MAT
: I-MAT
Cu I-MAT
: I-MAT
LiNbO3 I-MAT
crystals B-DSC
with O
different O
concentration O
of O
In2O3 B-MAT
were O
grown O
by O
the O
czochralski B-SMT
method I-SMT
. O


the O
infrared B-PRO
transmission I-PRO
spectra O
and O
the O
photo B-PRO
- I-PRO
damage I-PRO
resistant I-PRO
ability I-PRO
of O
the O
crystals B-DSC
were O
measured O
. O


the O
OH- B-PRO
absorption I-PRO
peak I-PRO
of O
in(3mol B-MAT
% I-MAT
) I-MAT
: I-MAT
Ce I-MAT
: I-MAT
Cu I-MAT
: I-MAT
LiNbO3 I-MAT
crystal B-DSC
shifts O
to O
ultraviolet O
. O


the O
photo B-PRO
- I-PRO
damage I-PRO
resistant I-PRO
ability I-PRO
of O
in(3mol B-MAT
% I-MAT
) I-MAT
: I-MAT
Ce I-MAT
: I-MAT
Cu I-MAT
: I-MAT
LiNbO3 I-MAT
crystal B-DSC
is O
about O
two O
orders O
of O
magnitude O
higher O
than O
those O
of O
pure B-DSC
LiNbO3 B-MAT
and O
Ce B-MAT
: I-MAT
Cu I-MAT
: I-MAT
LiNbO3 I-MAT
crystals B-DSC
. O


the O
diffraction B-PRO
efficiency I-PRO
, O
response B-PRO
time I-PRO
of O
In B-MAT
: I-MAT
Ce I-MAT
: I-MAT
Cu I-MAT
: I-MAT
LiNbO3 I-MAT
crystals B-DSC
were O
tested O
by O
two B-CMT
- I-CMT
wave I-CMT
coupling I-CMT
experiment I-CMT
. O


the O
response B-PRO
time I-PRO
of O
in(3mol B-MAT
% I-MAT
) I-MAT
: I-MAT
Ce I-MAT
: I-MAT
Cu I-MAT
: I-MAT
LiNbO3 I-MAT
crystal B-DSC
only O
one O
fourth O
of O
that O
of O
Ce B-MAT
: I-MAT
Cu I-MAT
: I-MAT
LiNbO3 I-MAT
. O


the O
mechanism O
of O
OH- B-PRO
absorption I-PRO
peak I-PRO
shifting O
and O
photo B-PRO
- I-PRO
damage I-PRO
resistant I-PRO
ability I-PRO
enhancement O
were O
discussed O
. O


cathodoluminescence B-CMT
from O
deformed B-DSC
OZn B-MAT
ceramics B-DSC


cathodoluminescence B-CMT
of O
deformed B-DSC
OZn B-MAT
ceramics B-DSC
is O
studied O
in O
a O
scanning B-CMT
electron I-CMT
microscope I-CMT
based O
cathodoluminescence B-CMT
measurement O
system O
. O


mechanical B-SMT
damage I-SMT
of O
the O
surface B-DSC
produces O
the O
decrease O
of O
the O
CL B-CMT
emission O
and O
a O
shift O
of O
the O
emission B-PRO
peak I-PRO
to O
higher O
wavelengths O
. O


the O
possible O
influence O
of O
oxygen B-PRO
vacancies I-PRO
on O
the O
observed O
effects O
is O
discussed O
. O


dense B-PRO
b-SiAlONs B-MAT
consolidated O
by O
a O
modified O
hydrolysis B-SMT
- I-SMT
assisted I-SMT
solidification I-SMT
route I-SMT


dense B-PRO
b-Si4Al2O2N6 B-MAT
materials O
were O
fabricated O
by O
a O
modified O
hydrolysis B-SMT
- I-SMT
assisted I-SMT
solidification I-SMT
( O
HAS B-SMT
) O
route O
from O
aqueous O
slurries O
containing O
<nUm> O
– O
50vol. O
% O
solids O
, O
in O
which O
<nUm> O
– O
22wt. O
% O
of O
the O
required O
a-Al2O3 B-MAT
was O
replaced O
by O
equivalent O
amounts O
of O
unprotected O
aluminium B-MAT
nitride I-MAT
( O
AlN B-MAT
) O
powder B-DSC
to O
promote O
consolidation O
via O
AlN B-MAT
hydrolysis B-SMT
. O


A O
fixed O
amount O
( O
9.37wt. O
% O
) O
of O
AlN B-MAT
passivated O
against O
hydrolysis B-SMT
with O
a O
coating B-APL
phosphate B-MAT
layer B-DSC
was O
also O
added O
to O
all O
the O
samples O
consolidated O
by O
the O
modified O
HAS B-SMT
method I-SMT
. O


the O
aqueous O
slurries O
were O
cast O
in O
non-porous O
moulds O
, O
allowed O
to O
set O
and O
dried B-SMT
before O
sintering B-SMT
at O
<nUm> O
° O
C O
for O
4h O
. O


for O
comparison O
purposes O
, O
ceramics B-DSC
with O
the O
same O
predicted O
final O
composition B-PRO
( O
having O
<nUm> O
% O
a-Si3N4 B-MAT
, O
<nUm> O
% O
a-Al2O3 B-MAT
, O
<nUm> O
% O
AlN B-MAT
and O
<nUm> O
% O
O3Y2 B-MAT
as O
starting O
materials O
) O
were O
also O
consolidated O
by O
a O
conventional O
dry B-SMT
- I-SMT
powder I-SMT
pressing I-SMT
( O
CDPP B-SMT
) O
. O


the O
b-Si4Al2O2N6 B-MAT
ceramics B-DSC
consolidated O
by O
the O
modified O
HAS B-SMT
route I-SMT
exhibited O
superior O
outstanding O
properties O
( O
bulk B-DSC
density B-PRO
, O
apparent B-PRO
porosity I-PRO
, O
water B-PRO
absorption I-PRO
capacity I-PRO
, O
hardness B-PRO
and O
fracture B-PRO
toughness I-PRO
) O
in O
comparison O
to O
the O
traditional O
dry B-SMT
- I-SMT
powder I-SMT
pressing I-SMT
route O
. O


band B-PRO
alignments I-PRO
at O
interface B-DSC
of O
OZn B-MAT
/ O
FAPbI3 B-MAT
heterojunction B-DSC
by O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT


the O
band B-PRO
alignments I-PRO
at O
the O
interface B-DSC
of O
OZn B-MAT
/ O
CH5I3N2Pb B-MAT
( O
FAPbI3 B-MAT
) O
heterojunction B-DSC
were O
measured O
by O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
. O


core B-PRO
levels I-PRO
of O
Pb B-MAT
5d O
and O
Zn B-MAT
3d O
were O
utilized O
to O
align O
the O
valence B-PRO
- I-PRO
band I-PRO
offset I-PRO
( O
VBO B-PRO
) O
. O


the O
VBO B-PRO
was O
determined O
to O
be O
<nUm> O
± O
<nUm> O
eV O
, O
and O
the O
conduction B-PRO
- I-PRO
band I-PRO
offset I-PRO
( O
CBO B-PRO
) O
was O
concluded O
to O
be O
<nUm> O
± O
<nUm> O
eV O
, O
manifesting O
that O
the O
OZn B-MAT
/ O
FAPbI3 B-MAT
heterojunction B-DSC
has O
a O
type-I O
band B-PRO
alignment I-PRO
. O


the O
data O
of O
the O
band B-PRO
alignment I-PRO
of O
OZn B-MAT
/ O
FAPbI3 B-MAT
heterojunction B-DSC
may O
benefit O
the O
design O
and O
development O
of O
novel O
perovskite B-APL
solar I-APL
cells I-APL
( O
CsPS B-APL
) O
. O


defect B-PRO
driven I-PRO
magnetism I-PRO
in O
doped B-DSC
O2Sn B-MAT
nanoparticles B-DSC
: O
surface B-DSC
effects O


magnetism B-PRO
and O
energetics B-PRO
of O
intrinsic O
and O
extrinsic B-PRO
defects I-PRO
and O
defect B-PRO
clusters I-PRO
in O
bulk B-DSC
and O
surfaces B-DSC
of O
O2Sn B-MAT
is O
investigated O
using O
first B-CMT
- I-CMT
principles I-CMT
to O
understand O
the O
role O
of O
surfaces B-DSC
in O
inducing O
magnetism B-PRO
in O
Zn B-MAT
doped B-DSC
nanoparticles I-DSC
. O


we O
find O
that O
Sn B-PRO
vacancies I-PRO
induce O
the O
largest O
magnetic B-PRO
moment I-PRO
in O
bulk B-DSC
and O
on O
surfaces B-DSC
. O


however O
, O
they O
have O
very O
large O
formation B-PRO
energies I-PRO
in O
bulk B-DSC
as O
well O
as O
on O
surfaces B-DSC
. O


oxygen B-PRO
vacancies I-PRO
on O
the O
other O
hand O
are O
much O
easier O
to O
create O
than O
SnV B-PRO
, O
but O
neutral O
and O
V B-PRO
O I-PRO
+ I-PRO
<nUm> I-PRO
vacancies I-PRO
do O
not O
induce O
any O
magnetism B-PRO
in O
bulk B-DSC
as O
well O
as O
on O
surfaces B-DSC
. O


V B-PRO
O I-PRO
+ I-PRO
<nUm> I-PRO
induce O
small O
magnetism B-PRO
in O
bulk B-DSC
and O
on O
( O
<nUm> O
) O
surfaces B-DSC
. O


isolated O
SnZn B-PRO
defects I-PRO
are O
found O
to O
be O
much O
easier O
to O
create O
than O
isolated O
Sn B-PRO
vacancies I-PRO
and O
induce O
magnetism B-PRO
in O
bulk B-DSC
as O
well O
on O
surfaces B-DSC
. O


due O
to O
charge O
compensation O
, O
ZnSn+VO B-PRO
defect I-PRO
cluster I-PRO
is O
found O
to O
have O
the O
lowest O
formation B-PRO
energy I-PRO
amongst O
all O
the O
defects O
; O
it O
has O
a O
large O
magnetic B-PRO
moment I-PRO
on O
( O
<nUm> O
) O
, O
a O
small O
magnetic B-PRO
moment I-PRO
on O
( O
<nUm> O
) O
surface B-DSC
and O
non-magnetic B-PRO
in O
bulk B-DSC
. O


thus O
, O
we O
find O
that O
SnZn B-MAT
and O
ZnSn+VO B-PRO
defects I-PRO
on O
the O
surfaces B-DSC
of O
O2Sn B-MAT
play O
an O
important O
role O
in O
inducing O
the O
magnetism B-PRO
in O
Zn B-MAT
- O
doped B-DSC
O2Sn B-MAT
nanoparticles B-DSC
. O


densification B-PRO
behavior I-PRO
and O
properties O
of O
hot B-SMT
- I-SMT
pressed I-SMT
CZr B-MAT
ceramics B-DSC
with O
Zr B-MAT
and O
graphite B-MAT
additives O


densifications O
of O
hot B-SMT
- I-SMT
pressed I-SMT
CZr B-MAT
ceramics B-DSC
with O
Zr B-MAT
and O
graphite B-MAT
additives O
were O
studied O
at O
<nUm> O
– O
<nUm> O
° O
C O
. O


CZr B-MAT
with O
8.94wt O
% O
Zr B-MAT
additive O
( O
named O
ZC10 B-MAT
) O
sintered B-SMT
at O
<nUm> O
– O
<nUm> O
° O
C O
achieved O
higher O
relative B-PRO
densities I-PRO
( O
> O
<nUm> O
% O
) O
than O
that O
of O
additive O
- O
free O
CZr B-MAT
( O
< O
<nUm> O
% O
) O
. O


the O
densification O
improvement O
was O
attributed O
to O
the O
formation O
of O
non-stoichiometric B-DSC
C9Zr10 B-MAT
, O
whereas O
there O
had O
rapid O
grain O
growth O
with O
grain B-PRO
size I-PRO
about O
<nUm> O
– O
<nUm> O
mm O
in O
ZC10 B-MAT
. O


by O
adding O
co-doped B-DSC
additive O
of O
Zr B-MAT
plus O
C B-MAT
and O
adjusting O
the O
molar B-PRO
ratio I-PRO
of I-PRO
Zr I-PRO
/ I-PRO
C I-PRO
, O
CZr B-MAT
with O
co-doped B-DSC
additives O
with O
Zr B-PRO
/ I-PRO
C I-PRO
molar I-PRO
ratio O
at O
<nUm> O
: O
<nUm> O
( O
named O
ZC12 B-MAT
) O
, O
CZr B-MAT
ceramics B-DSC
with O
both O
high O
relative B-PRO
density I-PRO
( O
<nUm> O
% O
) O
and O
fine O
microstructures B-PRO
( O
grain B-PRO
size I-PRO
about O
<nUm> O
– O
<nUm> O
mm O
) O
were O
obtained O
at O
<nUm> O
– O
<nUm> O
° O
C O
. O


effect O
of O
formation O
of O
non-stoichiometric B-DSC
ZrC1-x B-MAT
on O
densification B-SMT
of O
CZr B-MAT
was O
discussed O
. O


the O
vickers B-PRO
hardness I-PRO
and O
indentation B-PRO
toughness I-PRO
of O
ZC10 B-MAT
and O
ZC12 B-MAT
samples O
sintered B-SMT
at O
<nUm> O
° O
C O
were O
<nUm> O
GPa O
and O
3.0MPam1 O
/ O
<nUm> O
, O
<nUm> O
GPa O
and O
<nUm> O
MPam1 O
/ O
<nUm> O
, O
respectively O
. O


the O
effect O
of O
heat B-SMT
treatment I-SMT
on O
the O
physical B-PRO
properties I-PRO
of O
sol B-SMT
– I-SMT
gel I-SMT
derived O
OZn B-MAT
thin B-DSC
films I-DSC


zinc B-MAT
oxide I-MAT
( O
OZn B-MAT
) O
thin B-DSC
films I-DSC
were O
deposited O
on O
microscope O
glass B-MAT
substrates B-DSC
by O
sol B-SMT
– I-SMT
gel I-SMT
spin I-SMT
coating I-SMT
method O
. O


zinc B-MAT
acetate I-MAT
( O
AcZn B-MAT
) O
dehydrate O
was O
used O
as O
the O
starting O
salt O
material O
source O
. O


A O
homogeneous O
and O
stable O
solution O
was O
prepared O
by O
dissolving O
AcZn B-MAT
in O
the O
solution O
of O
monoethanolamine O
( O
MEA O
) O
. O


OZn B-MAT
thin B-DSC
films I-DSC
were O
obtained O
after O
preheating B-SMT
the O
spin B-SMT
coated I-SMT
thin B-DSC
films I-DSC
at O
<nUm> O
° O
C O
for O
<nUm> O
min O
after O
each O
coating B-SMT
. O


the O
films B-DSC
, O
after O
the O
deposition O
of O
the O
eighth O
layer O
, O
were O
annealed B-SMT
in O
air O
at O
temperatures O
of O
<nUm> O
° O
C O
, O
<nUm> O
° O
C O
and O
<nUm> O
° O
C O
for O
1h O
. O


the O
effect O
of O
thermal B-SMT
annealing I-SMT
in O
air O
on O
the O
physical B-PRO
properties I-PRO
of O
the O
sol B-SMT
– I-SMT
gel I-SMT
derived O
OZn B-MAT
thin B-DSC
films I-DSC
are O
studied O
. O


the O
powder B-DSC
and O
its O
thin B-DSC
film I-DSC
were O
characterized O
by O
x-ray B-CMT
diffractometer I-CMT
( O
XRD B-CMT
) O
method O
. O


XRD B-CMT
analysis O
revealed O
that O
the O
annealed B-SMT
OZn B-MAT
thin B-DSC
films I-DSC
consist O
of O
single B-DSC
phase I-DSC
OZn B-MAT
with O
wurtzite B-SPL
structure O
( O
JCPDS O
36-1451 O
) O
and O
show O
the O
c-axis B-PRO
grain I-PRO
orientation I-PRO
. O


increasing O
annealing B-SMT
temperature O
increased O
the O
c-axis O
orientation O
and O
the O
crystallite B-PRO
size I-PRO
of O
the O
film B-DSC
. O


the O
annealed B-SMT
films B-DSC
are O
highly O
transparent B-PRO
with O
average O
transmission B-PRO
exceeding O
<nUm> O
% O
in O
the O
visible O
range O
( O
<nUm> O
– O
<nUm> O
nm O
) O
. O


the O
measured O
optical B-PRO
band I-PRO
gap I-PRO
values O
of O
the O
OZn B-MAT
thin B-DSC
films I-DSC
were O
between O
<nUm> O
eV O
and O
<nUm> O
eV O
, O
which O
were O
in O
the O
range O
of O
band B-PRO
gap I-PRO
values O
of O
intrinsic O
OZn B-MAT
( O
<nUm> O
– O
<nUm> O
eV O
) O
. O


SEM B-CMT
analysis O
of O
annealed B-SMT
thin B-DSC
films I-DSC
has O
shown O
a O
completely O
different O
surface B-PRO
morphology I-PRO
behavior I-PRO
. O


preparation O
and O
photoluminescence B-CMT
of O
surface B-DSC
N O
- O
doped B-DSC
OZn B-MAT
nanocrystal B-DSC


OZn B-MAT
nanoparticles B-DSC
doped I-DSC
with O
nitrogen O
on O
surface B-DSC
were O
prepared O
by O
calcinating B-SMT
pure O
OZn B-MAT
nanoparticles B-DSC
at O
<nUm> O
and O
<nUm> O
° O
C O
in O
H3N O
atmosphere O
. O


uniform O
N O
- O
doped B-DSC
OZn B-MAT
nanocrystal B-DSC
was O
characterized O
by O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
, O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
XPS B-CMT
. O


A O
strong O
violet O
photoluminescence B-CMT
( O
PL B-CMT
) O
at O
<nUm> O
nm O
was O
observed O
at O
room O
temperature O
when O
excited O
with O
<nUm> O
nm O
light O
, O
and O
the O
emission O
peak O
increases O
with O
the O
increase O
of O
nitrogen B-PRO
atoms I-PRO
concentration I-PRO
. O


the O
violet O
PL B-CMT
originated O
from O
the O
electron B-PRO
transition I-PRO
from O
shallow B-PRO
donor I-PRO
levels I-PRO
of O
oxygen B-PRO
vacancies I-PRO
and O
doping B-SMT
nitrogen O
atoms O
to O
the O
top O
of O
valence B-PRO
band I-PRO
level I-PRO
. O


effect O
of O
annealing B-SMT
and O
electrochemical B-PRO
properties I-PRO
of O
sol B-SMT
– I-SMT
gel I-SMT
dip I-SMT
coated I-SMT
nanocrystalline B-DSC
O5V2 B-MAT
thin B-DSC
films I-DSC


nanocrystalline B-DSC
vanadium B-MAT
pentoxide I-MAT
( O
O5V2 B-MAT
) O
thin B-DSC
films I-DSC
were O
deposited O
on O
glass B-MAT
substrates B-DSC
by O
a O
simple O
and O
cost O
effective O
sol B-SMT
– I-SMT
gel I-SMT
dip I-SMT
coating I-SMT
method O
. O


the O
effect O
of O
annealing B-SMT
on O
microstructure B-PRO
and O
optical B-PRO
properties I-PRO
of O
O5V2 B-MAT
thin B-DSC
films I-DSC
were O
investigated O
. O


formation O
of O
nanorods B-DSC
with O
the O
average O
diameter O
of O
<nUm> O
– O
<nUm> O
nm O
after O
annealing B-SMT
is O
observed O
by O
scanning B-CMT
electron I-CMT
microscopy I-CMT
. O


x-ray B-CMT
diffractometry I-CMT
indicates O
that O
an O
orthorhombic B-SPL
structured O
thin B-DSC
film I-DSC
is O
transformed O
to O
b-V2O5 B-MAT
nanorods B-DSC
by O
subsequent O
annealing B-SMT
at O
<nUm> O
° O
C O
. O


it O
was O
also O
confirmed O
that O
the O
growth O
of O
nanorods B-DSC
strongly O
correlates O
with O
annealing B-SMT
conditions O
; O
nanorod B-DSC
formation O
can O
be O
explained O
by O
surface B-PRO
diffusion I-PRO
phenomenon O
. O


the O
electrochemical B-PRO
performance I-PRO
of O
the O
O5V2 B-MAT
nanorods B-DSC
was O
investigated O
by O
cyclic B-CMT
voltammetry I-CMT
. O


pressure O
dependence O
of O
optoelectronic B-PRO
properties I-PRO
of O
GaN B-MAT
in O
the O
zinc B-SPL
- I-SPL
blende I-SPL
structure O


the O
optoelectronic B-PRO
properties I-PRO
of O
GaN B-MAT
with O
zinc B-SPL
- I-SPL
blende I-SPL
structure O
under O
hydrostatic O
pressure O
up O
to O
120kbar O
are O
investigated O
employing O
the O
empirical B-CMT
pseudopotential I-CMT
method I-CMT
. O


the O
pressure B-PRO
coefficients I-PRO
of O
several O
critical B-PRO
- I-PRO
point I-PRO
band I-PRO
gaps I-PRO
are O
calculated O
and O
found O
to O
be O
in O
good O
agreement O
with O
the O
available O
experimental O
data O
. O


the O
refractive B-PRO
index I-PRO
decreases O
linearly O
with O
increasing O
pressure O
showing O
a O
negative B-PRO
pressure I-PRO
coefficient I-PRO
. O


At O
zero O
pressure O
, O
the O
agreement O
between O
our O
calculated O
optical B-PRO
dielectric I-PRO
constant I-PRO
and O
the O
existing O
experimental O
data O
depends O
on O
the O
model O
used O
for O
calculating O
the O
refractive B-PRO
index I-PRO
. O


microstructure B-PRO
, O
mechanical B-PRO
properties I-PRO
and O
thermal B-PRO
shock I-PRO
behavior I-PRO
of O
h-BN B-MAT
– O
AlN B-MAT
ceramic B-DSC
composites I-DSC
prepared O
by O
combustion B-SMT
synthesis I-SMT


h-BN B-MAT
– O
CSi B-MAT
– O
AlN B-MAT
– O
NTi B-MAT
ceramic B-DSC
composites I-DSC
with O
volume O
content O
of O
AlN B-MAT
– O
NTi B-MAT
ranging O
from O
<nUm> O
% O
to O
<nUm> O
% O
were O
prepared O
by O
combustion B-SMT
synthesis I-SMT
from O
powder B-DSC
compacts O
of O
B4C B-MAT
, O
Si B-MAT
, O
Al B-MAT
and O
NTi B-MAT
under O
100MPa O
nitrogen O
pressure O
. O


the O
volume O
fraction O
of O
AlN B-MAT
– O
NTi B-MAT
was O
found O
to O
have O
a O
significant O
influence O
on O
the O
microstructure B-PRO
, O
mechanical B-PRO
properties I-PRO
and O
thermal B-PRO
shock I-PRO
resistance I-PRO
of O
the O
composites B-DSC
. O


with O
the O
increasing O
volume O
content O
of O
AlN B-MAT
– O
NTi B-MAT
, O
the O
mechanical B-PRO
properties I-PRO
of O
the O
composites B-DSC
were O
improved O
remarkably O
, O
while O
thermal B-PRO
shock I-PRO
resistance I-PRO
decreased O
. O


thermal B-CMT
shock I-CMT
tests I-CMT
showed O
that O
the O
critical B-PRO
thermal I-PRO
shock I-PRO
temperature I-PRO
( O
DT B-PRO
) O
was O
higher O
than O
<nUm> O
° O
C O
for O
the O
composites B-DSC
with O
AlN B-MAT
– O
NTi B-MAT
contents O
of O
30vol O
% O
; O
while O
it O
was O
decreased O
to O
<nUm> O
and O
<nUm> O
° O
C O
for O
the O
composites B-DSC
with O
AlN B-MAT
– O
NTi B-MAT
contents O
of O
<nUm> O
and O
70vol O
% O
, O
respectively O
. O


current O
progress O
and O
future O
perspectives O
for O
organic O
/ O
inorganic O
perovskite B-APL
solar I-APL
cells I-APL


the O
recent O
emergence O
of O
efficient O
solar B-APL
cells I-APL
based O
on O
organic O
/ O
inorganic O
lead B-MAT
halide I-MAT
perovskite I-MAT
absorbers B-APL
promises O
to O
transform O
the O
fields O
of O
dye O
- O
sensitized O
, O
organic O
, O
and O
thin B-APL
film I-APL
solar I-APL
cells I-APL
. O


solution O
processed O
photovoltaics B-APL
incorporating O
perovskite B-SPL
absorbers B-APL
have O
achieved O
efficiencies B-PRO
of O
<nUm> O
% O
[1] O
in O
solid B-APL
- I-APL
state I-APL
device I-APL
configurations O
, O
superseding B-APL
liquid I-APL
dye I-APL
sensitized I-APL
solar I-APL
cell I-APL
( O
DSC B-APL
) O
, O
evaporated O
and O
tandem B-APL
organic I-APL
solar I-APL
cells I-APL
, O
as O
well O
as O
various O
thin B-APL
film I-APL
photovoltaics I-APL
; O
thus O
establishing O
perovskite B-APL
solar I-APL
cells I-APL
as O
a O
robust O
candidate O
for O
commercialization O
. O


since O
the O
first O
reports O
in O
late O
<nUm> O
, O
interest O
has O
soared O
in O
the O
innovative O
device O
structures O
as O
well O
as O
new O
materials O
, O
promising O
further O
improvements O
. O


however O
, O
identifying O
the O
basic O
working O
mechanisms O
, O
which O
are O
still O
being O
debated O
, O
will O
be O
crucial O
to O
design O
the O
optimum O
device O
configuration O
and O
maximize O
solar B-APL
cell I-APL
efficiencies B-PRO
. O


here O
we O
distill O
the O
current O
state O
- O
of O
- O
the O
- O
art O
and O
highlight O
the O
guidelines O
to O
ascertain O
the O
scientific O
challenges O
as O
well O
as O
the O
requisites O
to O
make O
this O
technology O
market O
- O
viable O
. O


fabrication O
and O
formation O
mechanism O
of O
Li2MnO3 B-MAT
ultrathin B-DSC
porous I-DSC
nanobelts I-DSC
by O
electrospinning B-SMT


Li2MnO3 B-MAT
ultrathin B-DSC
porous I-DSC
nanobelts I-DSC
with O
excellent O
continuities O
have O
been O
fabricated O
by O
the O
electrospinning B-SMT
method I-SMT
. O


both O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
observations O
showed O
that O
Li2MnO3 B-MAT
was O
well O
- O
defined O
one O
- O
dimensional O
nanobelts B-DSC
. O


the O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
results O
exhibited O
that O
the O
regular O
belt O
- O
like O
nanostructures B-DSC
possessed O
high O
degree O
of O
crystallinity B-PRO
without O
any O
detectable O
impurity O
phases O
, O
while O
their O
nanoparticle B-DSC
counterparts O
prepared O
by O
a O
typical O
sol B-SMT
- I-SMT
gel I-SMT
route O
were O
beset O
by O
several O
foreign O
impurities O
. O


moreover O
, O
such O
nanobelts B-DSC
also O
demonstrated O
larger O
surface B-PRO
areas I-PRO
compared O
with O
the O
nanoparticles B-DSC
. O


A O
temperature O
- O
dependent O
experiment O
has O
been O
adopted O
in O
an O
attempt O
to O
trail O
the O
growth O
process O
of O
the O
nanobelts B-DSC
, O
and O
then O
a O
possible O
formation O
mechanism O
was O
proposed O
. O


finally O
, O
other O
lithium B-MAT
manganese I-MAT
oxides I-MAT
e.g. O
LiMn2O4 B-MAT
and O
Li4Mn5O12 B-MAT
nanobelts B-DSC
were O
also O
synthesized O
via O
simply O
changing O
the O
rations O
of O
Li B-MAT
to O
Mn B-MAT
, O
indicating O
a O
versatile O
method O
was O
introduced O
in O
this O
work O
to O
obtain O
regular O
nanobelts B-DSC
. O


electronic B-PRO
and O
magnetic B-PRO
properties I-PRO
of O
Ba2Fe3O8Y B-MAT
from O
a O
first B-CMT
- I-CMT
principles I-CMT
study I-CMT


the O
electronic B-PRO
and O
magnetic B-PRO
properties I-PRO
of O
Y B-MAT
Ba2Fe3O8 I-MAT
have O
been O
systematically O
investigated O
within O
the O
framework O
of O
density B-CMT
- I-CMT
functional I-CMT
theory I-CMT
using O
the O
standard O
generalized B-CMT
gradient I-CMT
approximation I-CMT
( O
GGA B-CMT
) O
as O
well O
as O
the O
GGA B-CMT
plus I-CMT
hubbard I-CMT
U I-CMT
( O
GGA B-CMT
+ I-CMT
U I-CMT
) O
method O
. O


the O
GGA B-CMT
results O
show O
that O
the O
g B-PRO
- I-PRO
type I-PRO
antiferromagnetic I-PRO
( O
AFM B-PRO
) O
state O
is O
preferred O
among O
the O
considered O
magnetic B-PRO
configurations I-PRO
. O


the O
striking O
ionic B-PRO
character I-PRO
is O
shown O
for O
Y B-MAT
and O
Ba B-MAT
atoms O
while O
very O
strong O
hybridization O
is O
found O
between O
Fe B-MAT
3d O
and O
O O
2p O
orbitals O
. O


furthermore O
, O
the O
Fe B-MAT
– O
O O
– O
Fe B-MAT
superexchange B-PRO
interaction I-PRO
should O
be O
responsible O
for O
the O
stability B-PRO
of O
the O
AFM B-PRO
magnetic I-PRO
structure I-PRO
in O
this O
case O
. O


In O
addition O
, O
our O
theoretical O
calculations O
reveal O
that O
the O
ground B-PRO
state I-PRO
of O
Y B-MAT
Ba2Fe3O8 I-MAT
is O
a O
strongly B-PRO
correlated I-PRO
charge I-PRO
- I-PRO
transfer I-PRO
insulator I-PRO
with O
a O
finite O
band B-PRO
gap I-PRO
above O
the O
fermi B-PRO
level I-PRO
obtained O
by O
the O
GGA+U B-CMT
scheme O
, O
which O
is O
in O
agreement O
with O
the O
experimental O
observations O
. O


localized O
plasmon B-PRO
resonances I-PRO
of O
bimetallic B-PRO
Ag2Au B-MAT
nanorods B-DSC


we O
investigated O
the O
localized O
surface B-PRO
plasmon I-PRO
resonances I-PRO
of O
individual O
Ag2Au B-MAT
nanorods B-DSC
( O
NRs B-DSC
) O
using O
the O
dark B-CMT
- I-CMT
field I-CMT
spectro I-CMT
- I-CMT
microscopy I-CMT
technique O
. O


we O
find O
that O
the O
scattering O
spectra O
of O
such O
hetero B-DSC
- I-DSC
NRs I-DSC
show O
longitudinal B-PRO
resonance I-PRO
wavelengths I-PRO
that O
are O
nearly O
insensitive O
to O
the O
relative O
composition B-PRO
of O
Ag B-MAT
and O
Au B-MAT
. O


instead O
, O
the O
resonance B-PRO
is O
mostly O
governed O
by O
the O
overall O
length O
of O
the O
nanorod B-DSC
. O


this O
shows O
that O
the O
plasmons B-PRO
oscillate O
along O
the O
entire O
length O
of O
the O
NR B-DSC
without O
the O
significant O
perturbation O
at O
the O
Ag B-MAT
– O
Au B-MAT
interfaces B-DSC
. O


the O
results O
demonstrate O
that O
the O
overall O
geometry O
as O
well O
as O
the O
composition B-PRO
determine O
the O
tunability O
of O
the O
hetero B-PRO
- I-PRO
metallic I-PRO
nanostructures B-DSC
, O
and O
provide O
an O
important O
design O
rule O
for O
the O
composition B-PRO
- O
tunable O
bimetallic B-PRO
plasmon I-PRO
structures I-PRO
. O


effects O
of O
the O
oxygen B-PRO
nonstoichiometry I-PRO
on O
the O
physical B-PRO
properties I-PRO
of O
La0.7Sr0.3MnO3-d B-MAT
□ I-MAT
δ I-MAT
manganites I-MAT
( I-MAT
<nUm> I-MAT
≤ I-MAT
δ I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT


we O
present O
the O
oxygen B-PRO
deficiency I-PRO
effects O
on O
the O
structural B-PRO
, O
magnetic B-PRO
, O
and O
electrical B-PRO
properties I-PRO
in O
La0.7Sr0.3MnO3-d#d B-MAT
solution O
where O
□ O
is O
a O
vacancy O
and O
<nUm> O
≤ O
δ B-PRO
≤ O
<nUm> O
. O


polycrystalline B-DSC
samples O
La0.7Sr0.3MnO3-d#d B-MAT
were O
synthesized O
by O
a O
new O
method O
. O


In O
this O
series O
of O
manganites B-MAT
the O
mn3+ B-PRO
content I-PRO
is O
systematically O
increased O
due O
to O
the O
increase O
in O
the O
nonstoichiometry B-PRO
δ I-PRO
. O


x-ray B-CMT
diffraction I-CMT
analysis O
shows O
a O
phase O
transition O
from O
a O
rhombohedral B-SPL
to O
an O
orthorhombic B-SPL
system O
at O
<nUm> O
≤ O
δ B-PRO
≤ O
<nUm> O
. O


the O
material O
is O
ferromagnetic B-PRO
for O
<nUm> O
≤ O
δ B-PRO
≤ O
<nUm> O
and O
antiferromagnetic B-PRO
for O
<nUm> O
≤ O
δ B-PRO
≤ O
<nUm> O
. O


the O
curie B-PRO
temperature I-PRO
TC I-PRO
and O
saturation B-PRO
magnetization I-PRO
ms I-PRO
decrease O
with O
increasing O
δ B-PRO
. O


resistivity B-PRO
measurements O
as O
a O
function O
of O
temperature O
show O
a O
remarkable O
behavior O
for O
the O
La7Mn10O29Sr3 B-MAT
compound O
; O
it O
is O
ferromagnetic B-PRO
metallic I-PRO
for O
<nUm> O
≤ O
T O
≤ O
<nUm> O
K O
and O
becomes O
ferromagnetic B-PRO
insulator I-PRO
below O
<nUm> O
K O
, O
where O
a O
charge B-PRO
ordering I-PRO
seems O
to O
appear O
. O


the O
difference O
in O
the O
hopping B-PRO
energies I-PRO
in O
our O
samples O
can O
be O
related O
to O
the O
existence O
of O
two O
crystallographic B-PRO
structures I-PRO
, O
one O
orthorhombic B-SPL
and O
the O
other O
rhombohedral B-SPL
. O


seebeck B-PRO
effect I-PRO
in O
the O
antiferromagnetic B-PRO
single B-DSC
crystals I-DSC
of O
ZnCr2-x B-MAT
In I-MAT
x I-MAT
se4 I-MAT
( I-MAT
<nUm> I-MAT
< I-MAT
x I-MAT
< I-MAT
<nUm> I-MAT
) I-MAT


from O
the O
seebeck B-PRO
effect I-PRO
measurements O
it O
follows O
, O
that O
the O
spinels B-SPL
under O
study O
with O
the O
low O
concentration O
of O
x O
are O
characterized O
by O
the O
p B-PRO
- I-PRO
type I-PRO
electrical I-PRO
conductivity I-PRO
. O


for O
the O
samples O
with O
the O
higher O
concentration O
of O
x O
n-p B-PRO
phase I-PRO
transition I-PRO
with O
increase O
of O
temperature O
was O
observed O
. O


fabrication O
of O
Al B-MAT
/ O
MgO B-MAT
/ O
C B-MAT
and O
C B-MAT
/ O
MgO B-MAT
/ O
InSe B-MAT
/ O
C B-MAT
tunneling B-APL
barriers I-APL
for O
tunable O
negative B-PRO
resistance I-PRO
and O
negative B-APL
capacitance I-APL
applications I-APL


In O
this O
work O
, O
the O
design O
and O
characterization O
of O
magnesium B-MAT
oxide I-MAT
based O
tunneling B-APL
diodes I-APL
which O
are O
produced O
on O
Al B-MAT
and O
InSe B-MAT
films B-DSC
as O
rectifying B-APL
substrates I-APL
are O
investigated O
. O


it O
was O
found O
that O
when O
Al B-MAT
thin B-DSC
films I-DSC
are O
used O
, O
the O
device O
exhibit O
tunneling B-PRO
diode I-PRO
behavior I-PRO
of O
sharp O
valley O
at O
<nUm> O
V O
and O
peak B-PRO
to I-PRO
valley I-PRO
current I-PRO
ratio I-PRO
( O
PVCR B-PRO
) O
of O
<nUm> O
. O


In O
addition O
, O
the O
capacitance B-PRO
spectra O
of O
the O
Al B-MAT
/ O
MgO B-MAT
/ O
C B-MAT
device O
show O
a O
resonance O
peak O
of O
negative B-PRO
capacitance I-PRO
( O
NC B-PRO
) O
values O
at O
<nUm> O
MHz O
. O


the O
capacitance B-PRO
and O
resistance B-PRO
– I-PRO
voltage I-PRO
characteristics I-PRO
handled O
at O
an O
ac O
signal O
frequency O
of O
100MHz O
reflected O
a O
build B-PRO
in I-PRO
voltage I-PRO
( O
vbi B-PRO
) O
of O
<nUm> O
V O
and O
a O
negative B-PRO
resistance I-PRO
( O
NR B-PRO
) O
effect O
above O
<nUm> O
V O
. O


this O
device B-PRO
quality I-PRO
factor I-PRO
( I-PRO
q I-PRO
) I-PRO
– I-PRO
voltage I-PRO
response I-PRO
is O
~ O
<nUm> O
. O


when O
the O
Al B-MAT
substrate B-DSC
is O
replaced O
by O
InSe B-MAT
thin B-DSC
film I-DSC
, O
the O
tunneling B-APL
diode I-APL
valley O
appeared O
at O
<nUm> O
V O
. O


In O
addition O
, O
the O
PVCR B-PRO
, O
NR B-PRO
range I-PRO
, O
NC B-PRO
resonance I-PRO
peak I-PRO
, O
q B-PRO
and O
vbi B-PRO
are O
found O
to O
be O
<nUm> O
, O
<nUm> O
– O
<nUm> O
and O
<nUm> O
MHz O
, O
~ O
<nUm> O
and O
<nUm> O
V O
, O
respectively O
. O


due O
to O
the O
wide O
differential B-PRO
negative I-PRO
resistance I-PRO
and O
capacitance B-PRO
voltage I-PRO
ranges O
and O
due O
to O
the O
response O
of O
the O
C B-MAT
/ O
MgO B-MAT
/ O
InSe B-MAT
/ O
C B-MAT
device O
at O
1.0GHz O
, O
these O
devices O
appear O
to O
be O
suitable O
for O
applications O
as O
frequency B-APL
mixers I-APL
, O
amplifiers B-APL
, O
and O
monostable B-APL
– I-APL
bistable I-APL
circuit I-APL
elements I-APL
( O
MOBILE B-APL
) O
. O


the O
effect O
of O
oxygen B-PRO
content I-PRO
on O
the O
magnetic B-PRO
and O
transport B-PRO
properties I-PRO
of O
FeSr2Y1.5Ce0.5Cu2O8+x B-MAT


the O
magnetic B-PRO
and O
transport B-PRO
properties I-PRO
of O
FeSr2Y1.5Ce0.5Cu2O8+x B-MAT
have O
been O
studied O
in O
the O
oxygen B-PRO
saturated I-PRO
( O
OS B-PRO
) O
and O
oxygen B-PRO
reduced I-PRO
( I-PRO
OR I-PRO
) I-PRO
states I-PRO
. O


we O
find O
that O
the O
low O
temperature O
spin B-PRO
- I-PRO
glass I-PRO
transition I-PRO
is O
not O
affected O
by O
the O
oxygen O
content O
in O
the O
SrFeO3-x B-MAT
subunit O
although O
the O
magnitude O
of O
the O
curie B-PRO
– I-PRO
weiss I-PRO
temperature I-PRO
is O
significantly O
larger O
in O
the O
OR B-PRO
sample O
. O


the O
oxygen O
reduced O
sample O
also O
has O
an O
antiferromagnetic B-PRO
transition I-PRO
at O
~ O
<nUm> O
K O
that O
is O
likely O
to O
be O
due O
to O
antiferromagnetic B-PRO
ordering I-PRO
of O
the O
Cu B-MAT
moments O
in O
the O
CuO2 B-MAT
plane O
. O


the O
resistivity B-PRO
from O
the O
OR B-PRO
sample O
can O
be O
modeled O
in O
terms O
of O
variable O
range O
hopping O
and O
activated B-PRO
conduction I-PRO
, O
which O
indicates O
that O
it O
is O
a O
very O
disordered B-PRO
semiconductor I-PRO
. O


the O
oxygen B-PRO
saturated I-PRO
sample O
has O
additional O
holes O
in O
the O
CuO2 B-MAT
plane O
and O
the O
absence O
of O
superconductivity B-PRO
is O
likely O
due O
to O
pair O
breaking O
from O
Fe B-MAT
on O
the O
Cu B-MAT
sites O
in O
the O
CuO2 B-MAT
plane O
. O


we O
modeled O
the O
resistivity B-PRO
in O
the O
OS B-PRO
state I-PRO
in O
terms O
of O
inhomogeneous B-PRO
transport I-PRO
where O
there O
are O
metallic B-PRO
regions O
and O
disordered B-PRO
regions O
that O
have O
a O
resistivity B-PRO
with O
a O
<nUm> O
/ O
Tm B-PRO
temperature O
dependence O
at O
low O
temperatures O
. O


3D B-CMT
mapping I-CMT
of O
anisotropic O
ferroelectric B-PRO
/ O
dielectric B-PRO
composites B-DSC


macroscopic B-PRO
anisotropy I-PRO
in O
polycrystalline B-DSC
materials O
is O
of O
key O
interest O
since O
it O
may O
help O
filling O
the O
gap O
between O
randomly O
oriented O
polycrystals B-DSC
like O
ceramics B-DSC
and O
single B-DSC
crystals I-DSC
. O


non-destructive B-CMT
x-ray I-CMT
computed I-CMT
micro I-CMT
tomography I-CMT
( O
XCMT B-CMT
) O
is O
a O
necessary O
step O
towards O
the O
full O
control O
and O
modelling O
of O
such O
anisotropy B-PRO
, O
beyond O
the O
standard O
scheme O
of O
interfaces B-DSC
. O


to O
ascertain O
this O
progress O
, O
XCMT B-CMT
is O
applied O
to O
3D B-DSC
mixtures I-DSC
of O
ferroelectric B-PRO
and O
dielectric B-PRO
oxides B-MAT
processed O
by O
spark B-SMT
plasma I-SMT
sintering I-SMT
( O
SPS B-SMT
) O
. O


In O
such O
conditions O
, O
not O
only O
is O
this O
anisotropy B-PRO
seen O
in O
the O
overall O
dielectric B-PRO
parameters I-PRO
but O
it O
also O
shows O
up O
in O
ferroelectric B-PRO
properties I-PRO
. O


experimental O
macroscopic B-PRO
parameters I-PRO
are O
linked O
to O
the O
3D B-PRO
morphological I-PRO
anisotropy I-PRO
of O
individual O
MgO B-MAT
inclusions B-DSC
induced O
during O
SPS B-SMT
. O


aqueous B-PRO
corrosion I-PRO
behaviour I-PRO
of O
sintered B-SMT
stainless B-MAT
steels I-MAT
manufactured O
from O
mixes O
of O
gas B-SMT
atomized I-SMT
and O
water B-SMT
atomized I-SMT
powders B-DSC


the O
electrochemical B-PRO
corrosion I-PRO
improvement I-PRO
of O
a O
powder B-DSC
metallurgical I-DSC
( O
PM B-DSC
) O
stainless B-MAT
steel I-MAT
is O
studied O
in O
this O
work O
. O


water B-SMT
atomized I-SMT
( O
WA B-SMT
) O
ferritic B-SPL
AISI B-MAT
434L I-MAT
powders B-DSC
have O
been O
mixed O
with O
gas B-SMT
atomized I-SMT
( O
GA B-SMT
) O
austenitic B-SPL
( O
AISI B-MAT
316L I-MAT
type O
) O
and O
ferritic B-SPL
( O
AISI B-MAT
430L I-MAT
type O
) O
powders B-DSC
and O
processed O
through O
the O
traditional O
PM B-SMT
route O
. O


the O
addition O
of O
GA B-SMT
powder B-DSC
to O
the O
usual O
WA B-SMT
powder B-DSC
decreases O
the O
mean B-PRO
size I-PRO
of I-PRO
the I-PRO
pores I-PRO
of O
the O
sintered B-SMT
stainless B-MAT
steels I-MAT
. O


As O
the O
bigger O
pores O
are O
the O
ones O
that O
are O
able O
to O
act O
as O
crevices O
, O
unlike O
the O
smaller O
ones O
– O
that O
act O
as O
closed O
porosity B-PRO
, O
reduction O
in O
the O
number O
of O
big O
pores O
tends O
to O
improve O
the O
corrosion B-PRO
behaviour I-PRO
of O
PM B-SMT
stainless B-MAT
steels I-MAT
. O


reductions O
of O
the O
corrosion B-PRO
rate I-PRO
( O
icorr B-PRO
) O
and O
increases O
of O
the O
corrosion B-PRO
potential I-PRO
( O
ecorr B-PRO
) O
have O
been O
measured O
in O
neutral O
media O
, O
with O
and O
without O
chlorides O
. O


moreover O
, O
the O
additional O
beneficial O
effect O
of O
achieving O
a O
duplex O
microstructure B-PRO
through O
the O
addition O
of O
GA B-SMT
austenitic B-SPL
powders B-DSC
to O
the O
WA B-SMT
ferritic B-MAT
powders B-DSC
has O
also O
been O
verified O
. O


study O
on O
O2Ti B-MAT
thin B-DSC
films I-DSC
grown O
by O
advanced O
pulsed B-SMT
laser I-SMT
deposition I-SMT
on O
ITO B-MAT


O2Ti B-MAT
films B-DSC
were O
grown O
by O
an O
advanced O
pulsed B-SMT
laser I-SMT
deposition I-SMT
method I-SMT
( O
PLD B-SMT
) O
on O
ITO B-MAT
substrates B-DSC
to O
be O
used O
as O
functional B-APL
electrodes I-APL
in O
the O
manufacturing O
of O
solar B-APL
cells I-APL
. O


A O
pure O
titanium B-MAT
target O
( O
<nUm> O
% O
) O
was O
irradiated B-SMT
by O
a O
Nd B-MAT
: I-MAT
YAG I-MAT
laser B-APL
( O
<nUm> O
and O
<nUm> O
nm O
, O
<nUm> O
ns O
, O
<nUm> O
mJ O
, O
<nUm> O
J O
/ O
cm2 O
) O
in O
an O
oxygen O
atmosphere O
at O
different O
pressures O
( O
<nUm> O
– O
<nUm> O
mTorr O
) O
and O
at O
room O
temperature O
. O


after O
deposition O
, O
the O
films B-DSC
were O
subjected O
to O
an O
annealing B-SMT
process O
at O
<nUm> O
° O
C O
. O


the O
film B-DSC
structure B-PRO
, O
surface B-PRO
morphology I-PRO
, O
thickness O
, O
roughness B-PRO
, O
and O
optical B-PRO
transmission I-PRO
were O
investigated O
. O


regardless O
of O
the O
wavelength O
used O
, O
the O
films B-DSC
deposited O
at O
room O
temperature O
presented O
only O
OTi2 B-MAT
and O
OTi B-MAT
peaks O
. O


after O
thermal B-SMT
treatment I-SMT
, O
the O
O2Ti B-MAT
films B-DSC
became O
strongly O
crystalline B-DSC
, O
with O
a O
tetragonal B-SPL
structure B-PRO
and O
in O
the O
anatase B-SPL
phase O
; O
the O
threshold O
temperature O
value O
was O
<nUm> O
° O
C O
. O


the O
deposition O
rate O
was O
in O
the O
range O
of O
<nUm> O
– O
<nUm> O
nm O
/ O
pulse O
, O
and O
the O
roughness B-PRO
was O
<nUm> O
– O
<nUm> O
nm O
. O


optical B-PRO
transmission I-PRO
of O
the O
films B-DSC
in O
the O
visible O
range O
was O
between O
<nUm> O
% O
and O
<nUm> O
% O
. O


the O
application O
of O
graphene B-MAT
and O
its O
composites B-DSC
in O
oxygen B-APL
reduction I-APL
electrocatalysis I-APL
: O
a O
perspective O
and O
review O
of O
recent O
progress O


the O
pressing O
necessity O
of O
a O
sustainable O
energy O
economy O
renders O
electrochemical B-APL
energy I-APL
conversion I-APL
technologies I-APL
, O
such O
as O
polymer B-APL
electrolyte I-APL
fuel I-APL
cells I-APL
or O
metal B-APL
– I-APL
air I-APL
batteries I-APL
, O
of O
paramount O
importance O
. O


the O
implementation O
of O
these O
technologies O
at O
scale O
still O
faces O
cost O
and O
operational O
durability B-PRO
challenges O
that O
stem O
from O
the O
conventionally O
used O
oxygen B-APL
reduction I-APL
reaction I-APL
( I-APL
ORR I-APL
) I-APL
electrocatalysts I-APL
. O


while O
years O
of O
progress O
in O
ORR B-APL
catalyst I-APL
research O
has O
yielded O
some O
very O
attractive O
material O
designs O
, O
further O
advances O
are O
still O
required O
. O


graphene B-MAT
entered O
the O
picture O
over O
<nUm> O
years O
ago O
, O
and O
scientists O
have O
only O
recently O
achieved O
a O
level O
of O
understanding O
regarding O
how O
its O
specific O
properties O
can O
be O
fine O
- O
tuned O
for O
electrocatalyst B-APL
applications I-APL
. O


this O
paper O
provides O
a O
critical O
review O
of O
the O
knowledge O
generated O
and O
progress O
realized O
over O
these O
past O
years O
for O
the O
development O
of O
graphene B-MAT
- O
based O
ORR B-APL
catalysts I-APL
. O


the O
first O
section O
discusses O
the O
application O
potential O
of O
graphene B-MAT
or O
modified O
graphene B-MAT
as O
platinum B-MAT
nanoparticle B-DSC
catalyst B-APL
supports O
. O


the O
second O
section O
discusses O
the O
important O
role O
that O
graphene B-MAT
has O
played O
in O
the O
development O
of O
non-precious O
metal O
ORR B-APL
catalysts I-APL
, O
and O
more O
particularly O
its O
role O
in O
pyrolyzed O
transition O
metal O
– O
nitrogen O
– O
carbon B-MAT
complexes O
or O
as O
a O
support O
for O
inorganic O
nanoparticles B-DSC
. O


finally O
the O
development O
of O
heteroatom O
doped B-DSC
graphene B-MAT
species O
is O
discussed O
, O
as O
this O
has O
been O
demonstrated O
as O
an O
excellent O
method O
to O
fine O
- O
tune O
the O
physicochemical B-PRO
properties I-PRO
and O
induce O
catalytic B-PRO
activity I-PRO
. O


throughout O
this O
paper O
, O
clear O
differentiation O
is O
made O
between O
acidic O
and O
alkaline O
ORR B-APL
catalysts I-APL
, O
and O
some O
common O
misconceptions O
or O
improper O
testing O
practices O
used O
throughout O
the O
literature O
are O
revealed O
. O


synthesis O
strategies O
and O
how O
they O
pertain O
to O
the O
resulting O
structure B-PRO
and O
electrochemical B-PRO
performance I-PRO
of O
graphene B-MAT
are O
discussed O
. O


In O
light O
of O
the O
large O
body O
of O
work O
done O
in O
this O
area O
, O
specific O
strategies O
are O
suggested O
for O
perpetuating O
the O
advancement O
of O
graphene B-MAT
- O
based O
ORR B-APL
electrocatalysts I-APL
. O


with O
concerted O
efforts O
it O
is O
one O
day O
likely O
that O
graphene B-MAT
- O
based O
catalysts B-APL
will O
be O
a O
staple O
of O
electrochemical B-APL
energy I-APL
systems I-APL
. O


magnetic B-PRO
properties I-PRO
of O
mechanically B-SMT
alloyed I-SMT
amorphous B-DSC
FeMZr B-MAT
( I-MAT
m I-MAT
 I-MAT
Mn I-MAT
, I-MAT
Co I-MAT
, I-MAT
Ni I-MAT
, I-MAT
Ce I-MAT
, I-MAT
Dy I-MAT
, I-MAT
Er I-MAT
) I-MAT


magnetization B-PRO
measurements O
have O
been O
made O
on O
mechanically B-SMT
alloyed I-SMT
amorphous B-DSC
(Fe1-xMx)0.7Zr0.3 B-MAT
( I-MAT
m I-MAT
 I-MAT
Mn I-MAT
, I-MAT
Co I-MAT
, I-MAT
Ni I-MAT
, I-MAT
Zr I-MAT
, I-MAT
Ce I-MAT
, I-MAT
Dy I-MAT
and I-MAT
Er I-MAT
) I-MAT
. O


spin B-PRO
- I-PRO
glass I-PRO
- I-PRO
like I-PRO
and O
unusual O
sperimagnetic B-PRO
- I-PRO
like I-PRO
behaviour I-PRO
is O
observed O
. O


the O
noncollinear B-PRO
spin I-PRO
structure I-PRO
of O
the O
parent O
FeZr B-MAT
base O
should O
be O
modified O
variously O
by O
replacing O
Fe B-MAT
with O
different O
m O
atoms O
. O


NMR B-CMT
study O
of O
SDW B-PRO
state I-PRO
of O
cr1-x B-MAT
T I-MAT
x I-MAT
B2 I-MAT
( I-MAT
T I-MAT
= I-MAT
Mo I-MAT
and I-MAT
V I-MAT
) I-MAT


the O
nuclear B-CMT
magnetic I-CMT
resonance I-CMT
and I-CMT
relaxation I-CMT
( O
NMR B-CMT
) O
were O
measured O
for O
11B O
in O
Cr1-xTxB2 B-MAT
( I-MAT
T I-MAT
= I-MAT
Mo I-MAT
and I-MAT
V I-MAT
) I-MAT
. O


the O
11B O
NMR B-CMT
spectrum O
with O
a O
powder B-DSC
pattern O
characteristic O
of O
the O
SDW B-PRO
state I-PRO
was O
observed O
in O
the O
vicinity O
of O
the O
collapse O
of O
the O
antiferromagnetism B-PRO
. O


the O
SDW B-PRO
state I-PRO
in O
this O
system O
was O
found O
to O
be O
of O
intermediate O
regime O
of O
itinerant B-PRO
magnetism I-PRO
by O
analyses O
of O
the O
temperature O
dependence O
of O
the O
hyperfine B-PRO
field I-PRO
and O
the O
nuclear B-PRO
spin I-PRO
- I-PRO
lattice I-PRO
relaxation I-PRO
rate I-PRO
. O


improvement O
in O
photocurrent B-PRO
with O
n B-PRO
- I-PRO
type I-PRO
niobium- B-MAT
and O
rhenium B-MAT
- O
doped B-DSC
molybdenum B-MAT
and O
tungsten B-MAT
diselenide I-MAT
single B-DSC
crystals I-DSC


In O
order O
to O
increase O
the O
photoconductivity B-PRO
of O
n B-PRO
- I-PRO
type I-PRO
semiconductors I-PRO
, O
we O
made O
a O
particular O
study O
of O
TSe2 B-MAT
( I-MAT
T I-MAT
≡ I-MAT
Mo I-MAT
, I-MAT
W I-MAT
) I-MAT
transition O
dichalcogenides B-MAT
. O


niobium- B-MAT
and O
rhenium B-MAT
- O
doped B-DSC
single I-DSC
crystals I-DSC
were O
obtained O
by O
chemical B-CMT
vapour I-CMT
transport I-CMT
from O
a O
<nUm> O
% O
polycrystalline B-DSC
metal B-PRO
- O
doped B-DSC
solution O
, O
using O
iodine O
in O
the O
case O
of O
MoSe2 B-MAT
, O
and O
Cl4Se B-MAT
in O
the O
case O
of O
Se2W B-MAT
, O
as O
transport O
agents O
. O


the O
best O
results O
were O
obtained O
for O
doped B-DSC
MoSe2 B-MAT
crystals B-DSC
. O


In O
the O
Mo1-xRexSe2 B-MAT
phase O
, O
it O
is O
possible O
, O
when O
x O
= O
<nUm> O
× O
<nUm> O
− O
<nUm> O
, O
to O
increase O
the O
photocurrent B-PRO
gain I-PRO
by O
a O
factor O
of O
<nUm> O
without O
any O
applied O
voltage O
, O
the O
electrical B-PRO
conductivity I-PRO
being O
at O
a O
maximum O
. O


the O
best O
saturation B-PRO
current I-PRO
was O
obtained O
for O
Mo1-xRexSe2 B-MAT
when O
x O
= O
<nUm> O
× O
<nUm> O
− O
<nUm> O
, O
reaching O
<nUm> O
A O
m-2 O
. O


this O
value O
is O
the O
highest O
ever O
found O
among O
transition B-MAT
dichalcogenides I-MAT
. O


anisotropic O
li+ B-PRO
ion I-PRO
conductivity I-PRO
in O
a O
large O
single B-DSC
crystal I-DSC
of O
a O
Co(III) B-MAT
coordination O
complex O


large O
single B-DSC
crystals I-DSC
of O
a O
novel O
lithium B-MAT
cobalt I-MAT
coordination O
compound O
, O
C112Co8H82Li8N16O81 B-MAT
[LiCo(PDC)2] I-MAT
were O
grown O
via O
a O
hydrothermal B-SMT
reaction I-SMT
in O
high O
yield O
. O


the O
electrochemical B-CMT
impedance I-CMT
spectroscopy I-CMT
( O
EIS B-CMT
) O
data O
measured O
on O
a O
large O
single B-DSC
crystal I-DSC
of O
LiCo(PDC)2 B-MAT
revealed O
very O
interesting O
anisotropic O
li+ B-PRO
ion I-PRO
conductivity I-PRO
. O


the O
redox B-PRO
potential I-PRO
for O
co3+ O
/ O
co4+ O
observed O
at O
ca. O
<nUm> O
mV O
in O
the O
cyclic B-CMT
voltammogram I-CMT
was O
consistent O
with O
the O
electric B-PRO
potential I-PRO
where O
the O
ionic B-PRO
conductivity I-PRO
occurred O
. O


detailed O
structural B-CMT
analysis I-CMT
on O
a O
series O
of O
stoichiometrically O
equivalent O
cobalt B-MAT
coordination O
compounds O
, O
ACo(PDC)2 B-MAT
( I-MAT
A I-MAT
= I-MAT
na+ I-MAT
, I-MAT
K+ I-MAT
, I-MAT
and I-MAT
H3O+ I-MAT
) I-MAT
, O
indicated O
that O
the O
presence O
of O
ion O
channels O
as O
well O
as O
a O
suitable O
cation B-PRO
size I-PRO
is O
critical O
for O
the O
anisotropic O
ionic B-PRO
conductivity I-PRO
. O


microstructure B-PRO
and O
magnetic B-PRO
domain I-PRO
structure I-PRO
of O
boron B-MAT
- O
enriched B-DSC
BCo14Fe14Nd2 B-MAT
melt B-SMT
- I-SMT
spun I-SMT
ribbons B-DSC


heat B-SMT
treated I-SMT
melt I-SMT
- I-SMT
spun I-SMT
ribbons B-DSC
of O
(Nd0.95La0.05)9.5FebalCo5Nb2B10.5 B-MAT
have O
been O
studied O
systematically O
by O
superconducting B-CMT
quantum I-CMT
interference I-CMT
device I-CMT
( O
SQUID B-CMT
) O
magnetometry B-CMT
, O
conventional O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
CTEM B-CMT
) O
and O
lorentz B-CMT
transmission I-CMT
electron I-CMT
microscopy I-CMT
( O
LTEM B-CMT
) O
. O


the O
sample O
's O
microstructure B-PRO
grew O
from O
an O
amorphous B-DSC
state O
through O
a O
partially O
crystallized B-DSC
state O
at O
<nUm> O
° O
C O
, O
and O
finally O
to O
a O
fully O
crystallized B-DSC
state O
at O
<nUm> O
° O
C O
. O


excessive O
grain O
growth O
producing O
grains O
from O
<nUm> O
to O
<nUm> O
nm O
in O
diameter O
was O
observed O
when O
the O
ribbon B-DSC
was O
annealed B-SMT
at O
<nUm> O
° O
C O
. O


soft B-PRO
magnetic I-PRO
phases I-PRO
such O
as O
BFe3 B-MAT
and O
a-Fe B-MAT
precipitated O
at O
the O
grain B-PRO
boundaries I-PRO
. O


these O
intergranular B-PRO
phases I-PRO
are O
exchange O
coupled O
with O
the O
hard B-PRO
phase I-PRO
causing O
a O
decrease O
of O
hc B-PRO
. O


exchange B-PRO
- I-PRO
coupling I-PRO
dominant O
and O
dipolar B-PRO
- I-PRO
coupling I-PRO
dominant O
regions O
co-exist O
inside O
the O
sample O
. O


In O
the O
latter O
regions O
, O
snake O
- O
shaped O
interactive B-PRO
domains I-PRO
are O
frequently O
observed O
. O


anisotropic B-PRO
compressibility I-PRO
and O
expansivity B-PRO
in O
layered B-DSC
GeSe2 B-MAT


unit B-PRO
- I-PRO
cell I-PRO
dimensions I-PRO
of O
layered B-DSC
GeSe2 B-MAT
( O
P21 B-SPL
/ I-SPL
c I-SPL
, O
z B-PRO
= O
<nUm> O
) O
are O
determined O
isothermally O
and O
isobarically O
by O
in O
situ O
high O
- O
temperature O
and O
high O
- O
pressure O
angle B-CMT
- I-CMT
dispersive I-CMT
x-ray I-CMT
diffraction I-CMT
. O


the O
isothermal B-PRO
bulk I-PRO
modulus I-PRO
KT I-PRO
, O
from O
a O
third B-CMT
- I-CMT
order I-CMT
birch I-CMT
– I-CMT
murnaghan I-CMT
equation I-CMT
of I-CMT
state I-CMT
with O
its O
first B-PRO
pressure I-PRO
derivative I-PRO
KT' I-PRO
= O
<nUm> O
± O
<nUm> O
, O
is O
<nUm> O
± O
<nUm> O
GPa O
( O
T O
= O
573K O
, O
0.0001GPa O
≤ O
P O
≤ O
3.9GPa O
) O
. O


the O
isobaric B-PRO
volume I-PRO
expansivities I-PRO
aP I-PRO
are O
( O
<nUm> O
× O
10-5-7 O
× O
10-9 O
T O
) O
± O
<nUm> O
× O
10-5 O
K-1 O
and O
( O
<nUm> O
× O
10-5-7 O
× O
10-9 O
T O
) O
± O
<nUm> O
× O
10-5 O
K-1 O
at O
P O
= O
0.0001GPa O
( O
298K O
≤ O
T O
≤ O
773K O
) O
and O
1GPa O
( O
298K O
≤ O
T O
≤ O
614K O
) O
, O
respectively O
. O


both O
the O
compressibility B-PRO
and O
the O
expansivity B-PRO
are O
largely O
anisotropic O
due O
to O
the O
two B-PRO
- I-PRO
dimensional I-PRO
structure I-PRO
of O
this O
compound O
. O


hot B-PRO
workability I-PRO
of O
as-cast B-DSC
AlFe3 B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Cr I-MAT
intermetallic B-PRO
alloy B-DSC


processing B-PRO
characteristics I-PRO
of O
as-cast B-DSC
AlFe3 B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
Cr I-MAT
alloy B-DSC
have O
been O
studied O
using O
constant B-CMT
strain I-CMT
rate I-CMT
isothermal I-CMT
compression I-CMT
tests I-CMT
in O
the O
temperature O
range O
<nUm> O
– O
<nUm> O
K O
and O
strain O
rate O
range O
<nUm> O
– O
<nUm> O
s-1 O
. O


At O
strain O
rates O
≤ O
<nUm> O
s-1 O
, O
the O
stress B-PRO
– I-PRO
strain I-PRO
curves I-PRO
are O
of O
steady O
- O
state O
type O
while O
at O
higher O
strain O
rates O
the O
flow B-PRO
stress I-PRO
reaches O
a O
peak O
before O
falling O
into O
either O
a O
steady O
- O
state O
or O
continuous O
flow O
softening O
with O
strain O
. O


the O
processing O
map O
of O
the O
alloy B-DSC
revealed O
a O
domain O
of O
dynamic B-PRO
recrystallization I-PRO
( O
DRX B-PRO
) O
at O
temperatures O
greater O
than O
<nUm> O
K O
and O
the O
optimum O
conditions O
for O
processing O
occur O
at O
<nUm> O
K O
and O
at O
strain O
rate O
of O
<nUm> O
s-1 O
. O


however O
, O
at O
higher O
temperatures O
, O
due O
to O
dynamic O
grain O
growth O
, O
the O
optimum O
condition O
for O
processing O
has O
moved O
to O
higher O
strain O
rates O
. O


flow O
instabilities O
occur O
in O
the O
form O
of O
adiabatic B-PRO
shear I-PRO
bands I-PRO
when O
deformed O
at O
strain O
rates O
greater O
than O
<nUm> O
s-1 O
and O
at O
temperatures O
≤ O
<nUm> O
K O
. O


A O
constitutive O
relationship O
for O
hot B-SMT
working I-SMT
is O
developed O
to O
describe O
the O
relationship O
between O
flow B-PRO
stress I-PRO
, O
strain O
rate O
and O
temperature O
. O


density B-CMT
functional I-CMT
study O
of O
vibrational B-PRO
, O
thermodynamic B-PRO
and O
elastic B-PRO
properties I-PRO
of O
CoZr B-MAT
and O
ZrCoX3 B-MAT
( I-MAT
x I-MAT
= I-MAT
H I-MAT
, I-MAT
d I-MAT
and I-MAT
T I-MAT
) I-MAT
compounds O


the O
dynamical B-PRO
, O
thermodynamic B-PRO
and O
elastic B-PRO
properties I-PRO
of O
CoZr B-MAT
and O
its O
hydrides B-MAT
ZrCoX3 I-MAT
( I-MAT
x I-MAT
= I-MAT
H I-MAT
, I-MAT
d I-MAT
and I-MAT
T I-MAT
) I-MAT
are O
reported O
. O


while O
the O
electronic B-CMT
structure I-CMT
calculations I-CMT
are O
performed O
using O
plane B-CMT
wave I-CMT
pseudopotential I-CMT
approach I-CMT
, O
the O
effect O
of O
isotopes O
on O
the O
vibrational B-PRO
and O
thermodynamic B-PRO
properties I-PRO
has O
been O
demonstrated O
through O
frozen B-CMT
phonon I-CMT
approach I-CMT
. O


the O
results O
reveal O
significant O
difference O
between O
the O
CoH3Zr B-MAT
and O
its O
isotopic O
analogs O
in O
terms O
of O
phonon B-PRO
frequencies I-PRO
and O
zero B-PRO
point I-PRO
energies I-PRO
. O


for O
example O
, O
the O
energy B-PRO
gap I-PRO
between O
optical B-PRO
and O
acoustic B-PRO
modes I-PRO
reduces O
in O
the O
order O
of O
ZrCoT3 B-MAT
> O
ZrCoD3 B-MAT
> O
CoH3Zr B-MAT
. O


the O
vibrational B-PRO
properties I-PRO
shows O
that O
the O
intermetallic B-PRO
CoZr B-MAT
is O
dynamically B-PRO
stable I-PRO
whereas O
ZrCoX3 B-MAT
( I-MAT
x I-MAT
= I-MAT
H I-MAT
, I-MAT
d I-MAT
and I-MAT
T I-MAT
) I-MAT
are O
dynamically B-PRO
unstable I-PRO
. O


the O
calculated O
formation B-PRO
energies I-PRO
of O
ZrCoX3 B-MAT
, O
including O
the O
ZPE B-PRO
, O
are O
− O
<nUm> O
, O
− O
<nUm> O
and O
− O
<nUm> O
kJ O
/ O
( O
mole O
of O
ZrCoX3 O
) O
for O
x O
= O
H O
, O
d O
and O
T O
, O
respectively O
. O


In O
addition O
, O
the O
changes O
in O
elastic B-PRO
properties I-PRO
of O
CoZr B-MAT
upon O
hydrogenation B-SMT
have O
also O
been O
investigated O
. O


the O
results O
show O
that O
both O
CoZr B-MAT
and O
CoH3Zr B-MAT
are O
mechanically B-PRO
stable I-PRO
at O
ambient O
pressure O
. O


the O
debye B-PRO
temperatures I-PRO
of O
both O
CoZr B-MAT
and O
CoH3Zr B-MAT
are O
determined O
using O
the O
calculated O
elastic B-PRO
moduli I-PRO
. O


controllable O
synthesis O
and O
photocatalytic B-PRO
activities I-PRO
of O
water B-PRO
- I-PRO
soluble I-PRO
O2Ti B-MAT
nanoparticles B-DSC


water B-PRO
- I-PRO
soluble I-PRO
anatase B-SPL
, O
mixed B-SPL
- I-SPL
phase I-SPL
( O
anatase B-SPL
and O
rutile B-SPL
) O
and O
rutile B-SPL
O2Ti B-MAT
nanoparticles B-DSC
( O
NPs B-DSC
) O
or O
nanorods B-DSC
were O
synthesized O
under O
mild B-SMT
solution I-SMT
conditions I-SMT
using O
polyethylene O
glycol O
<nUm> O
( O
PEG O
<nUm> O
) O
as O
a O
stabilizer O
and O
ClH O
as O
a O
phase O
controlling O
reagent O
. O


the O
photocatalytic B-PRO
properties I-PRO
of O
these O
NPs B-DSC
with O
different O
crystal B-PRO
phases I-PRO
were O
evaluated O
by O
photocatalytic B-CMT
degradation I-CMT
experiments O
of O
methyl O
orange O
( O
MO O
) O
. O


as-prepared B-DSC
pure I-DSC
anatase B-SPL
O2Ti B-MAT
NPs B-DSC
show O
a O
higher O
photocatalytic B-PRO
activity I-PRO
than O
other O
samples O
and O
commercial O
P25 B-MAT
, O
which O
may O
be O
related O
to O
the O
high O
crystallinity B-PRO
, O
the O
pure O
anatase B-SPL
phase O
, O
small O
size O
and O
the O
enhanced O
absorbability B-PRO
associated O
with O
the O
existence O
of O
PEG O
<nUm> O
on O
the O
NP B-DSC
surface I-DSC
. O


thermal B-PRO
conductivity I-PRO
anomalies O
around O
antiferromagnetic B-PRO
order I-PRO
in O
LaMn2O6Sr B-MAT
and O
Mn2NdO6Sr B-MAT
crystals B-DSC


the O
thermal B-PRO
conductivity I-PRO
k(T) I-PRO
has O
been O
measured O
for O
sintered-La0.50Sr0.50MnO3 B-MAT
( O
S-LSMO B-MAT
) O
and O
Mn2NdO6Sr B-MAT
fabricated O
by O
the O
floating B-SMT
zone I-SMT
method I-SMT
( O
FZ B-SMT
- O
NSMO B-MAT
) O
in O
magnetic O
fields O
up O
to O
5T O
. O


both O
crystals B-DSC
commonly O
show O
a O
first O
order O
transition O
from O
the O
ferromagnetic B-PRO
( O
FM B-PRO
) O
to O
the O
antiferromagnetic B-PRO
( O
AF B-PRO
) O
phase O
with O
decreasing O
temperature O
and O
k(T) B-PRO
shows O
seemingly O
similar O
reductions O
just O
below O
the O
neel B-PRO
temperature I-PRO
TN I-PRO
in O
zero O
magnetic O
field O
. O


the O
field O
dependence O
of O
k(T) B-PRO
is O
, O
in O
contrast O
, O
quite O
different O
. O


k(T) B-PRO
of O
FZ B-SMT
- O
NSMO B-MAT
increases O
over O
the O
entire O
temperature O
range O
below O
TN B-PRO
in O
applied O
fields O
because O
of O
the O
electronic B-PRO
- I-PRO
component I-PRO
( O
ke B-PRO
) O
enhancement O
. O


for O
S-LSMO B-MAT
, O
where O
the O
heat B-PRO
conduction I-PRO
is O
mainly O
due O
to O
phonons O
, O
k(T) B-PRO
hardly O
depends O
on O
the O
magnetic O
field O
except O
for O
the O
change O
corresponding O
to O
the O
TN B-PRO
shift O
. O


analyses O
suggest O
that O
the O
phonon B-PRO
scattering I-PRO
by O
conduction O
electrons O
is O
very O
strong O
in O
the O
metallic B-PRO
FM I-PRO
phase O
of O
FZ B-SMT
- O
NSMO B-MAT
. O


fabrication O
of O
Ag B-MAT
/ O
OZn B-MAT
heterostructure B-DSC
and O
the O
role O
of O
surface B-DSC
coverage O
of O
OZn B-MAT
microrods B-DSC
by O
Ag B-MAT
nanoparticles B-DSC
on O
the O
photophysical B-PRO
and O
photocatalytic B-PRO
properties I-PRO
of O
the O
metal B-PRO
- O
semiconductor B-PRO
system O


this O
report O
presents O
findings O
on O
microstructural B-PRO
, O
photophysical B-PRO
, O
and O
photocatalytic B-PRO
properties I-PRO
of O
Ag B-MAT
/ O
OZn B-MAT
heterostructure B-DSC
grown O
on O
flexible B-PRO
and O
silicon B-MAT
substrates B-DSC
. O


OZn B-MAT
microrods B-DSC
are O
prepared O
by O
thermal B-SMT
decomposition I-SMT
method I-SMT
for O
different O
solute O
concentrations O
and O
Ag B-MAT
/ O
OZn B-MAT
heterostructure B-DSC
are O
fabricated O
by O
photo B-SMT
- I-SMT
deposition I-SMT
of O
Ag B-MAT
nanoparticles B-DSC
on O
OZn B-MAT
microrods B-DSC
. O


x-ray B-CMT
diffraction I-CMT
and O
electron B-CMT
microscopy I-CMT
studies O
confirm O
that O
OZn B-MAT
microrods B-DSC
belong O
to O
the O
hexagonal B-SPL
wurtzite I-SPL
structure B-PRO
and O
grown O
along O
[001] O
direction O
with O
random O
alignment O
showing O
that O
majority O
microrods B-DSC
are O
aligned O
with O
( O
<nUm> O
) O
face O
parallel O
to O
the O
sample O
surface B-DSC
. O


plasmonic B-PRO
Ag B-MAT
nanoparticles B-DSC
are O
attached O
to O
different O
faces O
of O
OZn B-MAT
. O


In O
the O
optical B-CMT
reflection I-CMT
spectra O
of O
Ag B-MAT
/ O
OZn B-MAT
heterostructure B-DSC
, O
the O
surface B-PRO
plasmon I-PRO
resonance I-PRO
peak O
due O
to O
Ag B-MAT
nanoparticles B-DSC
appears O
at O
<nUm> O
nm O
. O


due O
to O
the O
oxygen B-PRO
vacancies I-PRO
the O
band B-PRO
gaps I-PRO
of O
OZn B-MAT
microrods B-DSC
turn O
out O
to O
be O
narrower O
compared O
to O
that O
of O
bulk B-DSC
OZn B-MAT
. O


the O
presence O
of O
Ag B-MAT
nanoparticles B-DSC
decreases O
the O
photoluminescence B-CMT
intensity O
which O
might O
be O
attributed O
to O
the O
non-radiative B-PRO
energy I-PRO
and O
direct B-PRO
electron I-PRO
transfer I-PRO
in O
the O
plasmon B-PRO
– O
exciton B-PRO
system O
. O


the O
quenching O
of O
photoluminescence B-CMT
in O
Ag B-MAT
/ O
OZn B-MAT
heterostructure B-DSC
at O
different O
growth O
conditions O
depend O
on O
the O
extent O
of O
surface B-DSC
coverage O
of O
OZn B-MAT
by O
plasmonic B-PRO
Ag B-MAT
nanoparticles B-DSC
. O


photocatalytic B-PRO
degradation I-PRO
efficiency I-PRO
of O
Ag B-MAT
/ O
OZn B-MAT
heterostructure B-DSC
is O
higher O
than O
that O
of O
OZn B-MAT
microrods B-DSC
. O


the O
extent O
of O
surface B-DSC
coverage O
of O
OZn B-MAT
microrods B-DSC
by O
Ag B-MAT
nanoparticles B-DSC
is O
crucial O
for O
the O
observed O
changes O
in O
photophysical B-PRO
and O
photochemical B-PRO
properties I-PRO
. O


quantitative O
assessment O
of O
solid B-SMT
oxide I-SMT
electrochemical I-SMT
doping I-SMT


quantitative O
analysis O
of O
metal O
cation O
doping O
by O
solid B-SMT
oxide I-SMT
electrochemical I-SMT
doping I-SMT
( O
SOED B-SMT
) O
has O
been O
performed O
under O
galvanostatic O
doping O
conditions O
. O


A O
m B-MAT
– I-MAT
b''-Al2O3 I-MAT
( I-MAT
m I-MAT
= I-MAT
Ag I-MAT
, I-MAT
Na I-MAT
) I-MAT
microelectrode B-APL
( O
contact O
radius O
: O
about O
<nUm> O
mm O
) O
was O
used O
as O
cation O
source O
to O
attain O
a O
homogeneous O
solid B-APL
– I-APL
solid I-APL
contact I-APL
between O
the O
b''-Al2O3 B-MAT
and O
doping O
target O
. O


In O
Ag B-MAT
doping O
into O
alkali B-MAT
borate I-MAT
glass B-DSC
, O
the O
measured O
dopant O
amount O
closely O
matched O
the O
theoretical O
value O
. O


high O
faraday B-PRO
efficiencies I-PRO
of O
above O
<nUm> O
% O
were O
obtained O
. O


this O
suggests O
that O
the O
dopant O
amount O
can O
be O
precisely O
controlled O
on O
a O
micromole O
scale O
by O
the O
electric O
charge O
during O
electrolysis B-SMT
. O


on O
the O
other O
hand O
, O
current O
efficiencies O
of O
Na B-MAT
doping O
into O
Bi2Sr2CaCu2Oy B-MAT
( O
BSCCO B-MAT
) O
ceramics B-DSC
depended O
on O
the O
applied O
constant O
current O
. O


efficiencies B-PRO
of O
above O
<nUm> O
% O
were O
achieved O
at O
a O
constant O
current O
of O
<nUm> O
mA O
( O
<nUm> O
A O
cm-2 O
) O
. O


the O
relatively O
low O
efficiencies O
were O
explained O
by O
the O
saturation O
of O
BSCCO B-MAT
grain B-PRO
boundaries I-PRO
with O
Na O
. O


by O
contrast O
, O
excess O
Na O
was O
detected O
on O
the O
anodic O
surface B-DSC
of O
ceramics B-DSC
at O
a O
constant O
current O
of O
<nUm> O
mA O
( O
<nUm> O
A O
cm-2 O
) O
. O


In O
the O
present O
study O
, O
we O
demonstrate O
that O
SOED B-SMT
enables O
micromole O
- O
scale O
control O
over O
dopant O
amount O
. O


high B-PRO
pressure I-PRO
behavior I-PRO
of O
electronic B-PRO
states I-PRO
in O
AsGa B-MAT
/ O
Ga1-xAlxAs B-MAT
multiple B-APL
quantum I-APL
wells I-APL


the O
high B-PRO
pressure I-PRO
behavior I-PRO
of O
electronic B-PRO
states I-PRO
in O
AsGa B-MAT
/ O
AlAsGa B-MAT
multiple B-APL
quantum I-APL
wells I-APL
was O
investigated O
at O
80K O
. O


it O
was O
found O
that O
the O
pressure O
dependence O
of O
the O
exciton B-PRO
energy I-PRO
g1e,hh I-PRO
was O
nonlinear O
. O


the O
nonlinearity O
may O
be O
due O
to O
the O
pressure O
- O
induced O
transition O
of O
the O
Ga1-xAlxAs B-MAT
barrier O
layers B-DSC
from O
a O
direct O
to O
an O
indirect B-PRO
band I-PRO
structure I-PRO
, O
and O
the O
resulting O
decrease O
of O
the O
effective B-PRO
barrier I-PRO
height I-PRO
. O


fabrication O
and O
wear B-PRO
characteristics I-PRO
of O
MoSi2 B-MAT
matrix B-DSC
composites I-DSC
reinforced O
by O
La2O3 B-MAT
and O
Mo5Si3 B-MAT


MoSi2 B-MAT
matrix B-DSC
composites I-DSC
with O
the O
addition O
of O
Mo5Si3 B-MAT
and O
La2O3 B-MAT
( O
LMM B-MAT
) O
were O
fabricated O
by O
self B-SMT
- I-SMT
propagating I-SMT
high I-SMT
- I-SMT
temperature I-SMT
synthesis I-SMT
( O
SHS B-SMT
) O
and O
sintering B-SMT
technique O
. O


these O
composites B-DSC
were O
analyzed O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
. O


results O
shows O
addition O
of O
both O
Mo5Si3 B-MAT
and O
La2O3 B-MAT
is O
clearly O
contributive O
to O
strengthen O
and O
toughen O
the O
base O
. O


when O
the O
contents O
of O
La2O3 B-MAT
and O
Mo5Si3 B-MAT
are O
0.9wt O
% O
and O
5at. O
% O
, O
respectively O
, O
the O
hardness B-PRO
and O
fracture B-PRO
toughness I-PRO
of O
the O
LMM B-MAT
are O
increased O
independently O
by O
<nUm> O
% O
and O
<nUm> O
% O
than O
that O
of O
pure O
MoSi2 B-MAT
, O
and O
by O
<nUm> O
% O
and O
<nUm> O
% O
than O
that O
of O
0.9wt O
% O
La2O3 B-MAT
/ O
MoSi2 B-MAT
composite B-DSC
. O


the O
toughening B-PRO
mechanism I-PRO
of O
the O
composite B-DSC
includes O
fine O
crystal O
and O
crack O
microbridging O
. O


this O
composite B-DSC
exhibits O
excellent O
wear B-PRO
resistance I-PRO
. O


its O
wear B-PRO
mechanism I-PRO
has O
been O
observed O
to O
be O
adhesion B-PRO
, O
oxidation B-SMT
and O
brittle B-PRO
fracture I-PRO
during O
dry B-CMT
slide I-CMT
wear I-CMT
test I-CMT
against O
carbon B-MAT
steel I-MAT
. O


impurity B-CMT
auger I-CMT
spectra O
: O
A O
probe O
of O
the O
local B-PRO
impurity I-PRO
density I-PRO
of I-PRO
state I-PRO
and O
the O
impurity B-PRO
electron I-PRO
— I-PRO
electron I-PRO
interactions I-PRO


we O
show O
that O
the O
local B-PRO
impurity I-PRO
density I-PRO
of I-PRO
states I-PRO
and O
the O
impurity B-PRO
electron I-PRO
— I-PRO
electron I-PRO
interactions I-PRO
can O
be O
obtained O
from O
impurity B-CMT
auger I-CMT
spectra O
. O


for O
a O
Ag19Pd B-MAT
alloy B-DSC
we O
find O
<nUm> O
% O
pd(d) O
character O
in O
the O
Ag B-MAT
d O
band O
and O
pd(4d-4d) O
coulomb B-PRO
interactions I-PRO
which O
are O
much O
larger O
than O
the O
virtual B-PRO
bound I-PRO
state I-PRO
widths I-PRO
. O


preparation O
and O
properties O
of O
zinc B-SPL
blende I-SPL
and O
orthorhombic B-SPL
SSn B-MAT
films B-DSC
by O
chemical B-SMT
bath I-SMT
deposition I-SMT


SSn B-MAT
( O
stannous B-MAT
sulfide I-MAT
) O
films B-DSC
were O
prepared O
by O
chemical B-SMT
bath I-SMT
deposition I-SMT
in O
which O
a O
novel O
chelating O
reagent O
ammonium O
citrate O
was O
used O
. O


the O
film B-DSC
has O
a O
zinc B-SPL
blende I-SPL
structure O
or O
an O
orthorhombic B-SPL
structure O
which O
is O
determined O
by O
the O
pH O
value O
and O
the O
temperature O
of O
the O
deposition O
solution O
. O


the O
reason O
for O
this O
result O
is O
considered O
to O
be O
that O
SSn B-MAT
films B-DSC
prepared O
under O
different O
conditions O
have O
different O
deposition O
mechanisms O
( O
ion O
- O
by O
- O
ion O
mechanism O
for O
the O
zinc B-SPL
blende I-SPL
structured O
SSn B-MAT
and O
hydroxide O
cluster O
mechanism O
for O
the O
orthorhombic B-SPL
structured O
SSn B-MAT
) O
. O


the O
prepared O
SSn B-MAT
films B-DSC
are O
homogeneous B-PRO
and O
well O
adhered O
. O


SEM B-CMT
images O
show O
that O
the O
SSn B-MAT
films B-DSC
with O
different O
structures O
have O
different O
surface B-PRO
morphologies I-PRO
. O


electrical B-CMT
test I-CMT
shows O
that O
the O
resistivity B-PRO
of O
the O
films B-DSC
is O
as O
low O
as O
<nUm> O
ocm O
and O
<nUm> O
ocm O
for O
orthorhombic B-SPL
and O
zinc B-SPL
blende I-SPL
SSn B-MAT
films B-DSC
, O
respectively O
, O
which O
are O
much O
lower O
than O
the O
ever O
reported O
values O
. O


persistent B-PRO
photoconductivity I-PRO
( O
PPC B-PRO
) O
phenomena O
are O
observed O
for O
both O
the O
films B-DSC
with O
zinc B-SPL
blende I-SPL
and O
orthorhombic B-SPL
structures O
by O
photo B-CMT
- I-CMT
current I-CMT
responses I-CMT
measurement I-CMT
. O


the O
optical B-PRO
bandgaps I-PRO
of O
the O
SSn B-MAT
films B-DSC
are O
determined O
to O
be O
<nUm> O
eV O
and O
<nUm> O
eV O
for O
zinc B-SPL
blende I-SPL
structure O
and O
orthorhombic B-SPL
structure O
, O
respectively O
. O


thermoluminescence B-CMT
properties O
of O
ce3+ O
- O
doped B-DSC
B3LiO9Sr4 B-MAT
phosphor B-APL


borates O
B3LiO9Sr4 B-MAT
were O
synthesized O
by O
high B-SMT
- I-SMT
temperature I-SMT
solid I-SMT
- I-SMT
state I-SMT
reaction I-SMT
. O


the O
thermoluminescence B-CMT
( O
TL B-CMT
) O
and O
some O
of O
the O
dosimetric B-PRO
characteristics I-PRO
of O
ce3+ O
- O
activated O
B3LiO9Sr4 B-MAT
were O
reported O
. O


the O
TL B-CMT
glow O
curve O
is O
composed O
of O
only O
one O
peak O
located O
at O
about O
<nUm> O
° O
C O
between O
room O
temperature O
and O
<nUm> O
° O
C O
. O


the O
optimum O
ce3+ O
concentration O
is O
<nUm> O
mol O
% O
to O
obtain O
the O
highest O
TL B-CMT
intensity O
. O


the O
TL B-PRO
kinetic I-PRO
parameters I-PRO
of O
B3LiO9Sr4 B-MAT
: I-MAT
0.01Ce3+ I-MAT
were O
studied O
by O
the O
peak B-CMT
shape I-CMT
method I-CMT
. O


the O
TL B-CMT
dose B-PRO
response I-PRO
is O
linear O
in O
the O
protection O
dose O
ranging O
from O
<nUm> O
mGy O
to O
<nUm> O
Gy O
. O


the O
three B-CMT
- I-CMT
dimensional I-CMT
thermoluminescence I-CMT
emission I-CMT
spectra O
were O
also O
studied O
, O
peaking O
at O
<nUm> O
and O
<nUm> O
nm O
due O
to O
the O
characteristic B-PRO
transition I-PRO
of O
ce3+ O
. O


pressure O
dependence O
of O
superconductivity B-PRO
in O
the O
pseudo-one B-DSC
- I-DSC
dimensional I-DSC
compound O
Mo3Se3Tl B-MAT


measurements O
of O
the O
temperature O
and O
pressure O
dependences O
of O
the O
resistivity B-PRO
of O
the O
pseudo-one B-DSC
- I-DSC
dimensional I-DSC
ternary O
compound O
Mo3Se3Tl B-MAT
are O
presented O
. O


we O
find O
that O
the O
conductivity B-PRO
parallel O
to O
the O
highly O
conducting B-PRO
c-axis I-PRO
is O
enhanced O
by O
pressure O
and O
the O
superconducting B-PRO
transition I-PRO
temperature I-PRO
Tc I-PRO
is O
suppressed O
by O
pressure O
at O
a O
rate O
thTc B-PRO
thP I-PRO
= O
− O
<nUm> O
× O
<nUm> O
− O
<nUm> O
kbar-1 O
. O


these O
results O
are O
discussed O
in O
relation O
to O
the O
current O
models O
of O
transport O
in O
one B-DSC
- I-DSC
dimensional I-DSC
conductors B-PRO
. O


synthesis O
and O
electrocatalytic B-PRO
property I-PRO
of O
mono-dispersed B-DSC
Ag B-MAT
/ O
Fe3O4 B-MAT
composite B-DSC
micro-sphere I-DSC


one O
- O
step O
reaction O
was O
designed O
to O
synthesize O
mono-dispersed B-DSC
Ag B-MAT
/ O
Fe3O4 B-MAT
micro-sphere B-DSC
with O
different O
Ag B-MAT
content O
via O
a O
facile O
and O
easily O
controlled O
hydrothermal B-SMT
method I-SMT
without O
use O
of O
any O
surfactant O
. O


the O
phases O
and O
composition B-CMT
analysis I-CMT
of O
the O
as-prepared B-DSC
samples O
were O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
, O
respectively O
. O


the O
morphology B-PRO
of O
the O
samples O
was O
observed O
by O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
and O
field B-CMT
- I-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
( O
FE B-CMT
- I-CMT
SEM I-CMT
) O
. O


the O
results O
revealed O
that O
the O
Ag B-MAT
/ O
Fe3O4 B-MAT
composite B-DSC
samples O
with O
different O
Ag B-MAT
content O
were O
micro-spheres B-DSC
with O
almost O
the O
identical O
size O
of O
<nUm> O
nm O
or O
so O
in O
diameter O
. O


the O
electrocatalytic B-PRO
activity I-PRO
of O
the O
resultant O
samples O
modified O
on O
a O
glassy B-DSC
carbon B-MAT
electrode B-APL
( O
GCE B-APL
) O
for O
p-nitrophenol B-APL
reduction I-APL
in O
a O
basic O
solution O
was O
investigated O
. O


the O
results O
indicated O
that O
all O
the O
samples O
exhibited O
enhanced O
electrocatalytic B-PRO
activity I-PRO
for O
p-nitrophenol B-APL
reduction I-APL
, O
and O
the O
sample O
with O
<nUm> O
% O
Ag B-MAT
exhibited O
the O
highest O
electrocatalytic B-PRO
one I-PRO
. O


growth O
and O
optical B-PRO
properties I-PRO
of O
FLi B-MAT
/ O
F3La B-MAT
eutectic B-DSC
crystals I-DSC


neutron B-APL
imaging I-APL
devices I-APL
employing O
a O
scintillator B-APL
can O
be O
used O
in O
various O
fields O
, O
and O
eutectic B-DSC
crystals I-DSC
can O
be O
suitable O
for O
the O
imaging O
with O
a O
fine O
position O
resolution O
of O
a O
few O
hundred O
micrometers O
. O


since O
FLi B-MAT
and O
F3La B-MAT
have O
different O
refractive B-PRO
indexes I-PRO
of O
<nUm> O
and O
<nUm> O
at O
<nUm> O
nm O
, O
respectively O
, O
the O
eutectic B-DSC
crystal I-DSC
is O
expected O
to O
behave O
as O
a O
scintillator B-APL
with O
light B-PRO
guiding I-PRO
properties I-PRO
. O


thus O
, O
the O
optical B-PRO
properties I-PRO
of O
Ce B-MAT
- O
doped B-DSC
FLi B-MAT
/ O
F3La B-MAT
eutectic B-DSC
crystal I-DSC
grown O
by O
micro-pulling B-SMT
down I-SMT
method I-SMT
were O
investigated O
. O


the O
light B-PRO
output I-PRO
of O
FLi B-MAT
/ O
Ce B-MAT
: I-MAT
F3La I-MAT
eutectic B-DSC
crystal I-DSC
was O
relatively O
small O
. O


the O
emission O
peaks O
at O
<nUm> O
nm O
originating O
from O
ce3+ O
of O
5d O
– O
4f O
transition O
were O
observed O
under O
excitation O
by O
UV O
photons O
and O
5.5MeV O
alpha O
rays O
. O


moreover O
, O
the O
photo B-PRO
- I-PRO
luminescence I-PRO
decay I-PRO
time I-PRO
of O
Ce B-MAT
- O
doped B-DSC
FLi B-MAT
/ O
F3La B-MAT
eutectic B-DSC
crystal I-DSC
was O
estimated O
to O
be O
<nUm> O
± O
<nUm> O
ns O
. O


preparation O
of O
CTi B-MAT
single B-DSC
crystal I-DSC
from O
self B-SMT
- I-SMT
combustion I-SMT
rod B-DSC
by O
floating B-SMT
zone I-SMT
method I-SMT


In O
order O
to O
prepare O
a O
single B-DSC
crystal I-DSC
of O
CTi B-MAT
with O
a O
high O
purity B-PRO
using O
the O
floating B-SMT
zone I-SMT
method I-SMT
, O
the O
feed B-APL
rods I-APL
were O
prepared O
by O
the O
self B-SMT
- I-SMT
combustion I-SMT
reaction I-SMT
of O
Ti B-MAT
metal O
and O
carbon B-MAT
. O


the O
control O
of O
the O
composition B-PRO
of O
the O
feed B-APL
rod I-APL
, O
the O
impurity O
refining O
, O
the O
density B-PRO
of O
the O
feed B-APL
rod I-APL
and O
the O
degree O
of O
the O
reaction O
were O
examined O
in O
the O
process O
of O
self B-SMT
- I-SMT
combustion I-SMT
. O


using O
the O
feed B-APL
rod I-APL
prepared O
in O
this O
way O
, O
a O
high O
purity B-PRO
single B-DSC
crystal I-DSC
with O
controlled O
composition B-PRO
was O
prepared O
by O
a O
modified B-SMT
zone I-SMT
leveling I-SMT
method I-SMT
. O


effect O
of O
buffer B-DSC
layer I-DSC
on O
thermochromic B-PRO
performances I-PRO
of O
O2V B-MAT
films B-DSC
fabricated O
by O
magnetron B-SMT
sputtering I-SMT


As O
a O
well O
- O
developed O
industrial O
fabricating O
method O
, O
magnetron B-SMT
sputtering I-SMT
technique O
has O
its O
distinct O
advantages O
for O
the O
large O
- O
scale O
production O
. O


In O
order O
to O
investigate O
the O
effect O
of O
buffer B-DSC
layer I-DSC
on O
the O
formation O
and O
thermochromic B-PRO
performances I-PRO
of O
O2V B-MAT
films B-DSC
, O
using O
RF B-SMT
magnetron I-SMT
sputtering I-SMT
method O
, O
we O
fabricated O
three O
kinds O
of O
buffer B-DSC
layers I-DSC
O2Si B-MAT
, O
O2Ti B-MAT
and O
O2Sn B-MAT
on O
soda B-MAT
lime I-MAT
float B-DSC
- I-DSC
glass I-DSC
. O


then O
according O
to O
the O
reactive B-SMT
DC I-SMT
magnetron I-SMT
sputtering I-SMT
method O
, O
O2V B-MAT
films B-DSC
were O
deposited O
. O


due O
to O
the O
restriction O
of O
heat B-SMT
treatment I-SMT
temperature O
when O
using O
soda B-MAT
lime I-MAT
float B-DSC
- I-DSC
glass I-DSC
as O
substrates B-DSC
, O
dense B-PRO
rutile B-SPL
phase O
O2Ti B-MAT
can O
not O
be O
formed O
, O
leading O
to O
the O
formation O
of O
vanadium B-MAT
oxide I-MAT
compounds O
containing O
Na B-MAT
ions O
. O


when O
using O
O2Sn B-MAT
as O
buffer B-DSC
layer I-DSC
, O
we O
found O
that O
relatively O
high O
pure O
O2V B-MAT
can O
be O
deposited O
more O
easily O
. O


In O
addition O
, O
compared O
with O
the O
effect O
of O
O2Si B-MAT
buffer B-DSC
layer I-DSC
, O
we O
observed O
an O
enhanced O
visible O
transparency B-PRO
, O
a O
decreased O
infrared B-PRO
emissivity I-PRO
, O
which O
should O
be O
mainly O
originated O
from O
the O
modified O
morphology B-PRO
and O
/ O
or O
the O
hetero B-DSC
- I-DSC
structured I-DSC
O2V B-MAT
/ O
O2Sn B-MAT
interface B-DSC
. O


ablation B-PRO
behavior I-PRO
of O
B2Zr B-MAT
– O
CSi B-MAT
protective B-APL
coating I-APL
for O
carbon B-MAT
/ O
carbon B-MAT
composites B-DSC


ablation B-PRO
behavior I-PRO
of O
B2Zr B-MAT
– O
CSi B-MAT
protective B-APL
coating I-APL
for O
carbon B-MAT
/ O
carbon B-MAT
composites B-DSC
during O
oxyacetylene B-CMT
flame I-CMT
test I-CMT
at O
<nUm> O
° O
C O
was O
investigated O
by O
analyzing O
the O
microstructure B-PRO
differentiation O
caused O
by O
the O
increasing O
intensity O
of O
ablation B-SMT
from O
the O
border O
to O
the O
center O
of O
the O
surface B-DSC
. O


after O
ablation B-SMT
, O
a O
continuous O
O2Si B-MAT
scale B-DSC
, O
a O
porous B-DSC
O2Si B-MAT
layer B-DSC
inlaid O
with O
fine O
O2Zr B-MAT
nuclei O
, O
and O
a O
continuous O
O2Zr B-MAT
scale B-DSC
respectively O
emerged O
in O
the O
border O
region O
, O
the O
transitional O
region O
, O
and O
the O
center O
region O
. O


In O
order O
to O
investigate O
the O
ablation B-SMT
microstructure B-PRO
in O
the O
initial O
stage O
, O
the O
sub-layer B-PRO
microstructure I-PRO
was O
characterized O
and O
found O
to O
be O
mainly O
formed O
by O
coral B-DSC
- I-DSC
like I-DSC
structures B-PRO
of O
O2Zr B-MAT
, O
which O
showed O
huge O
difference O
with O
the O
continuous O
structure B-PRO
of O
O2Zr B-MAT
on O
the O
surface B-DSC
layer I-DSC
. O


A O
kinetic B-CMT
model I-CMT
concerning O
the O
thickness O
change O
induced O
by O
volatilization O
and O
oxidation B-SMT
during O
ablation B-SMT
was O
built O
to O
explain O
the O
different O
growth B-PRO
mechanisms I-PRO
of O
the O
continuous O
O2Zr B-MAT
scale B-DSC
and O
the O
coral B-DSC
- I-DSC
like I-DSC
O2Zr B-MAT
structure B-PRO
. O


characterization O
of O
the O
silicon B-MAT
- O
sapphire B-MAT
interface B-DSC


two O
examples O
of O
nucleation O
of O
silicon B-MAT
on O
sapphire B-MAT
( O
SOS B-MAT
) O
will O
be O
discussed O
as O
observed O
during O
( O
<nUm> O
) O
a O
standard O
deposition O
performed O
on O
an O
industrial O
vertical B-SMT
reactor I-SMT
and O
( O
<nUm> O
) O
a O
deposition O
performed O
in O
an O
horizontal B-SMT
reactor I-SMT
working O
at O
reduced O
pressure O
. O


the O
first O
stages O
of O
nucleation O
have O
been O
observed O
by O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
. O


the O
last O
stages O
of O
nucleation O
have O
been O
studied O
by O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
. O


on O
thick O
deposits O
secondary B-CMT
ion I-CMT
mass I-CMT
spectroscopy I-CMT
( O
SIMS B-CMT
) O
which O
gives O
aluminum B-MAT
profiles O
has O
been O
performed O
. O


correlation O
on O
nucleation O
results O
with O
electrical B-CMT
measurements I-CMT
on O
integrated B-APL
devices I-APL
will O
be O
presented O
. O


electrode B-APL
polarization B-PRO
and O
electrical B-PRO
properties I-PRO
of O
the O
Co4FeLa3O15Sr2 B-MAT
− I-MAT
δ I-MAT
, O
O O
/ O
yttria B-MAT
stabilized B-DSC
zirconia B-MAT
interface B-DSC
: O
effect O
of O
gas O
phase O
composition O
and O
temperature O


the O
steady B-PRO
- I-PRO
state I-PRO
current I-PRO
- I-PRO
overpotential I-PRO
characteristics I-PRO
of O
the O
O2,La0.6Sr0.4Co0.8Fe0.2O3 B-MAT
− I-MAT
δ I-MAT
/ O
YSZ B-MAT
interface B-DSC
have O
been O
studied O
as O
a O
function O
of O
oxygen O
partial O
pressure O
and O
temperature O
. O


ideal O
nernst B-PRO
behaviour I-PRO
is O
observed O
in O
the O
temperature O
range O
between O
<nUm> O
– O
<nUm> O
° O
C O
and O
oxygen O
pressure O
range O
between O
<nUm> O
– O
<nUm> O
kPa O
. O


the O
results O
of O
I B-CMT
− I-CMT
η I-CMT
measurements I-CMT
indicate O
that O
in O
the O
potential O
range O
<nUm> O
– O
<nUm> O
V O
, O
the O
apparent O
anodic B-PRO
and O
cathodic B-PRO
charge I-PRO
transfer I-PRO
coefficients I-PRO
are O
close O
to O
unity O
: O
aa B-PRO
= O
ac B-PRO
= O
<nUm> O
. O


the O
logarithm O
of O
the O
equilibrium B-PRO
exchange I-PRO
current I-PRO
density I-PRO
( O
I0 B-PRO
) O
shows O
a O
positive O
dependence O
on O
the O
logarithm O
of O
the O
oxygen O
partial O
pressure O
with O
a O
slope O
m B-PRO
= O
<nUm> O
± O
<nUm> O
. O


these O
observations O
are O
in O
agreement O
with O
a O
proposed O
reaction O
model O
in O
which O
the O
diffusion O
of O
singly O
ionized O
oxygen O
adatoms O
( O
oads- O
) O
on O
the O
oxide B-MAT
surface B-DSC
is O
assumed O
to O
be O
the O
rate O
determining O
step O
of O
the O
electrode B-APL
reaction O
. O


effects O
of O
Al2O3 B-MAT
addition O
on O
the O
microstructure B-PRO
and O
microwave B-PRO
dielectric I-PRO
properties I-PRO
of O
Ba400Nd933O5400Ti1800 B-MAT
ceramics B-DSC


Ba4Nd9.33Ti18O54*xwt B-MAT
% I-MAT
Al2O3 I-MAT
( O
BNT-A B-MAT
) O
ceramics B-DSC
( O
x O
= O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
) O
were O
prepared O
by O
the O
conventional O
solid B-SMT
state I-SMT
reaction I-SMT
. O


the O
effects O
of O
Al2O3 B-MAT
on O
the O
microstructure B-PRO
and O
microwave B-PRO
dielectric I-PRO
properties I-PRO
of O
Ba400Nd933O5400Ti1800 B-MAT
( O
BNT B-MAT
) O
ceramics B-DSC
were O
investigated O
. O


x-ray B-CMT
diffraction I-CMT
and O
backscatter B-CMT
electronic I-CMT
images I-CMT
showed O
that O
the O
Al2O3 B-MAT
additive O
gave O
rise O
to O
a O
second O
phase O
Al2BaO14Ti5 B-MAT
( O
BAT B-MAT
) O
. O


the O
formation B-PRO
mechanism I-PRO
and O
grain B-PRO
growth I-PRO
of O
the O
BAT B-MAT
phase O
were O
first O
discussed O
. O


dielectric B-CMT
property I-CMT
test I-CMT
revealed O
that O
the O
Al2O3 B-MAT
additive O
had O
improved O
the O
dielectric B-PRO
properties I-PRO
of O
the O
BNT B-MAT
ceramics B-DSC
: O
increased O
the O
q B-PRO
× I-PRO
f I-PRO
value O
from O
<nUm> O
to O
<nUm> O
GHz O
and O
decreased O
the O
tf B-PRO
value O
from O
<nUm> O
to O
<nUm> O
ppm O
/ O
° O
C O
. O


A O
BNT-A B-MAT
ceramic B-DSC
with O
excellent O
dielectric B-PRO
properties I-PRO
: O
er B-PRO
= O
<nUm> O
, O
q B-PRO
× I-PRO
f I-PRO
= O
<nUm> O
GHz O
, O
tf B-PRO
= O
<nUm> O
ppm O
/ O
° O
C O
was O
obtained O
with O
2.0wt O
% O
Al2O3 B-MAT
added O
after O
sintering B-SMT
at O
<nUm> O
° O
C O
for O
4h O
. O


microstructure B-PRO
and O
corrosion B-PRO
behavior I-PRO
of O
Mg-Sn-Ca B-MAT
alloys B-DSC
after O
extrusion B-SMT


Mg-Sn-Ca B-MAT
alloys B-DSC
promise O
a O
reasonable O
corrosion B-PRO
resistance I-PRO
in O
combination O
with O
good O
creep B-PRO
resistance I-PRO
, O
likely O
due O
to O
the O
presence O
of O
Ca2-xMgxSn B-MAT
and O
other O
phases O
. O


the O
selected O
alloys B-DSC
with O
<nUm> O
% O
Sn B-MAT
and O
Ca B-MAT
in O
the O
range O
of O
<nUm> O
% O
– O
<nUm> O
% O
have O
been O
extruded B-SMT
in O
order O
to O
achieve O
more O
homogeneous O
microstructure B-PRO
compared O
with O
the O
as-cast B-DSC
alloys I-DSC
. O


optical B-CMT
microscopy(OM) I-CMT
and O
x-ray B-CMT
diffraction(XRD) I-CMT
techniques O
were O
used O
to O
study O
the O
microstructure B-PRO
and O
phases O
of O
these O
alloys B-DSC
. O


the O
corrosion B-PRO
behavior I-PRO
of O
these O
alloys B-DSC
was O
investigated O
by O
means O
of O
salt B-CMT
spray I-CMT
test I-CMT
and O
potentio-dynamic B-CMT
measurements I-CMT
. O


the O
results O
obtained O
on O
the O
alloys B-DSC
Mg-3Sn B-MAT
( O
T3 B-MAT
) O
, O
Mg-3Sn-1Ca B-MAT
( O
TX31 B-MAT
) O
, O
and O
Mg-3Sn-2Ca B-MAT
( O
TX32 B-MAT
) O
indicate O
the O
presence O
of O
the O
same O
phases O
in O
as-cast B-DSC
and O
after O
extrusion B-SMT
, O
namely O
Mg2Sn B-MAT
, O
Ca2-xMgxSn B-MAT
, O
and O
Ca2-xMgxSn B-MAT
/ O
CaMg2 B-MAT
, O
respectively O
. O


however O
, O
due O
to O
the O
occurrence O
of O
extensive O
recrystallization O
in O
the O
extrusion B-SMT
process O
, O
the O
grain B-PRO
size I-PRO
has O
significantly O
reduced O
after O
extrusion B-SMT
. O


the O
reduction O
leads O
to O
the O
improvement O
of O
the O
corrosion B-PRO
resistance I-PRO
after O
extrusion B-SMT
which O
is O
then O
comparable O
with O
the O
commercial O
alloy B-DSC
AZ91D B-MAT
. O


ionic B-PRO
conduction I-PRO
in O
( B-MAT
<nUm> I-MAT
− I-MAT
x)B2O3 I-MAT
+ I-MAT
xLi2O I-MAT


A O
model O
of O
ionic B-PRO
conduction I-PRO
in O
glasses B-DSC
is O
developed O
, O
in O
which O
the O
transport O
of O
classical O
particles O
takes O
place O
by O
hopping O
between O
negatively O
charged O
sites O
with O
possible O
multiple O
occupancy O
. O


this O
relates O
the O
ionic B-PRO
conductivity I-PRO
of O
( B-MAT
<nUm> I-MAT
− I-MAT
x)B2O3 I-MAT
+ I-MAT
xLi2O I-MAT
with O
the O
structural O
changes O
in O
the O
glass B-DSC
due O
to O
the O
addition O
of O
the O
alkali B-MAT
metal I-MAT
oxide I-MAT
, O
which O
give O
the O
nature O
of O
the O
negative O
traps O
as O
a O
function O
of O
x O
. O


A O
mean B-CMT
field I-CMT
calculation I-CMT
based O
on O
these O
ideas O
correctly O
predicts O
the O
behaviour O
of O
the O
activation B-PRO
energy I-PRO
and O
explains O
the O
surprisingly O
simple O
arrhenius B-PRO
behaviour I-PRO
of O
the O
conductivity B-PRO
. O


magnetoimpedance B-PRO
effect I-PRO
at O
various O
temperatures O
for O
manganite B-MAT
La0.7Ca0.3MnO3-d I-MAT


In O
the O
present O
work O
, O
the O
AC B-PRO
magnetoimpedance I-PRO
effect I-PRO
in O
La0.7Ca0.3MnO3-d B-MAT
at O
various O
temperatures O
are O
investigated O
. O


the O
peak O
of O
the O
metal B-PRO
– I-PRO
insulator I-PRO
transition I-PRO
occurs O
in O
the O
temperature O
dependence O
of O
impedance B-PRO
. O


negative O
magnetoimpedance B-PRO
effect I-PRO
in O
the O
La0.7Ca0.3MnO3-d B-MAT
is O
obtained O
at O
frequencies O
f O
≤ O
<nUm> O
MHz O
. O


In O
the O
magnetoimpedance B-PRO
effect I-PRO
of O
manganites B-MAT
, O
the O
magnetic O
field O
not O
only O
decreases O
the O
permeability B-PRO
mt I-PRO
, O
but O
also O
reduces O
the O
resistivity B-PRO
ρ I-PRO
by O
aligning O
the O
local B-PRO
spins I-PRO
and O
varying O
the O
transfer B-PRO
integral I-PRO
tij I-PRO
. O


the O
AC B-PRO
magnetoimpedance I-PRO
participated O
by O
the O
DC B-PRO
colossal I-PRO
magnetoresistance I-PRO
( O
CMR B-PRO
) O
in O
manganites B-MAT
, O
should O
be O
connected O
with O
the O
combined O
effects O
of O
double B-PRO
exchange I-PRO
interaction I-PRO
, O
electron B-PRO
– I-PRO
phonon I-PRO
coupling I-PRO
and O
skin B-PRO
effect I-PRO
. O


high O
thermoelectric B-PRO
performance I-PRO
of O
weyl B-PRO
semimetal I-PRO
AsTa B-MAT


the O
existence O
of O
weyl B-PRO
nodes I-PRO
predicted O
in O
AsTa B-MAT
has O
been O
confirmed O
by O
angle B-CMT
- I-CMT
resolved I-CMT
photoemission I-CMT
spectroscopy I-CMT
, O
which O
provides O
potential O
applications O
in O
thermoelectric B-APL
devices I-APL
due O
to O
the O
extraordinary O
transport B-PRO
properties I-PRO
of O
AsTa B-MAT
. O


by O
using O
first B-CMT
- I-CMT
principles I-CMT
calculations I-CMT
and O
semiclassical B-CMT
boltzmann I-CMT
transport I-CMT
theory I-CMT
, O
we O
study O
the O
electrical B-PRO
transport I-PRO
properties I-PRO
of O
AsTa B-MAT
. O


high O
anisotropy B-PRO
is O
observed O
in O
the O
electrical B-PRO
transport I-PRO
of O
AsTa B-MAT
. O


the O
obtained O
seebeck B-PRO
coefficients I-PRO
are O
in O
good O
agreement O
with O
experimental O
values O
. O


the O
lattice B-PRO
dynamics I-PRO
properties I-PRO
of O
AsTa B-MAT
are O
also O
investigated O
and O
the O
obtained O
phonon B-PRO
frequencies I-PRO
agree O
well O
with O
the O
measurements O
. O


the O
lattice B-PRO
thermal I-PRO
conductivity I-PRO
is O
calculated O
using O
the O
self B-CMT
- I-CMT
consistent I-CMT
iterative I-CMT
approach I-CMT
. O


anisotropic O
lattice B-PRO
thermal I-PRO
conductivity I-PRO
is O
observed O
as O
well O
. O


maximum O
thermoelectric B-PRO
figure I-PRO
of I-PRO
merit I-PRO
zT I-PRO
of O
<nUm> O
at O
900K O
is O
found O
for O
n B-PRO
- I-PRO
doping I-PRO
AsTa B-MAT
along O
zz O
direction O
. O


finally O
, O
the O
size O
dependence O
of O
lattice B-PRO
thermal I-PRO
conductivity I-PRO
and O
corresponding O
thermoelectric B-PRO
properties I-PRO
are O
investigated O
for O
designing O
thermoelectric B-PRO
nanostructures B-DSC
. O


the O
work O
sheds O
light O
on O
the O
nature O
of O
the O
thermoelectric B-PRO
response I-PRO
of O
weyl B-PRO
semimetal I-PRO
. O


low O
frequency O
underwater B-APL
piezoceramic I-APL
transducer I-APL


this O
paper O
presents O
some O
aspects O
about O
the O
piezoceramic B-PRO
materials O
utilized O
in O
low B-APL
frequency I-APL
flextensional I-APL
piezoceramic I-APL
transducers I-APL
for O
underwater B-APL
acoustics I-APL
applications I-APL
. O


the O
piezoceramic B-PRO
material O
utilized O
in O
the O
flextensional B-APL
transducer I-APL
is O
type O
O300Pb100Ti47Zr53 B-MAT
( O
PZT B-MAT
) O
with O
various O
additions O
( O
Ni B-MAT
, O
Bi B-MAT
and O
Mn B-MAT
) O
. O


the O
underwater B-APL
acoustic I-APL
device I-APL
realized O
in O
the O
laboratory O
presents O
an O
omnidirectional O
directivity O
diagram O
and O
low O
resonant B-PRO
frequency I-PRO
. O


superconductivity B-PRO
at O
15K O
in O
As10Fe9Nd10O10Rh B-MAT
without O
F O
- O
doping B-SMT


we O
present O
results O
of O
transport B-PRO
and O
magnetic B-PRO
properties I-PRO
measurements O
performed O
on O
polycrystalline B-DSC
As10Fe9Nd10O10Rh B-MAT
. O


despite O
the O
large O
size O
difference O
between O
Fe B-MAT
and O
Rh B-MAT
elements O
, O
this O
compound O
undergoes O
a O
superconducting B-PRO
transition I-PRO
with O
Tc B-PRO
∼ O
<nUm> O
K O
. O


we O
have O
compared O
the O
transport B-PRO
properties I-PRO
of O
this O
Rh B-MAT
- O
doped B-DSC
oxypnictide B-MAT
with O
that O
of O
optimally O
doped B-DSC
As25F3Fe25Nd25O22 B-MAT
. O


contrary O
to O
this O
latter O
compound O
, O
a O
strong O
upturn O
of O
the O
normal B-PRO
- I-PRO
state I-PRO
resistivity I-PRO
occurs O
above O
Tc B-PRO
, O
and O
no O
peak O
of O
the O
thermopower B-PRO
has O
been O
observed O
. O


effects O
of O
Cu B-MAT
addition O
on O
CO B-PRO
gas I-PRO
- I-PRO
sensing I-PRO
properties I-PRO
of O
O2Ti B-MAT
prepared O
by O
oxidizing B-SMT
mechanically I-SMT
- I-SMT
synthesized I-SMT
NTi B-MAT
composites B-DSC


NTi B-MAT
– O
Cu B-MAT
composites B-DSC
were O
synthesized O
in O
a O
pressurized O
N O
atmosphere O
using O
a O
ball B-SMT
milling I-SMT
process O
. O


O2Ti B-MAT
sensing B-APL
materials O
were O
added O
with O
<nUm> O
– O
8at O
% O
Cu B-MAT
, O
which O
was O
prepared O
via O
oxidation B-SMT
at O
temperatures O
of O
<nUm> O
and O
<nUm> O
° O
C O
. O


structural B-CMT
characterization I-CMT
was O
performed O
using O
x-ray B-CMT
diffraction I-CMT
, O
field B-CMT
emission I-CMT
scattering I-CMT
electron I-CMT
microscopy I-CMT
( O
FE B-CMT
- I-CMT
SEM I-CMT
) O
, O
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
. O


Cu B-MAT
addition O
promoted O
anatase B-SPL
- O
to O
- O
rutile B-SPL
transformation O
and O
grain O
growth O
, O
and O
the O
responses O
of O
the O
samples O
that O
were O
oxidized B-SMT
at O
<nUm> O
° O
C O
with O
CO O
gas O
were O
enhanced O
by O
adding O
Cu B-MAT
to O
O2Ti B-MAT
compared O
with O
the O
unmodified O
O2Ti B-MAT
. O


the O
O2Ti B-MAT
materials O
with O
<nUm> O
% O
Cu B-MAT
showed O
the O
greatest O
response B-PRO
to I-PRO
CO I-PRO
of O
<nUm> O
at O
<nUm> O
ppm O
of O
CO O
gas O
, O
which O
can O
be O
compared O
to O
the O
response B-PRO
value I-PRO
of O
<nUm> O
of O
unmodified O
O2Ti B-MAT
– O
CO B-MAT
gas O
under O
identical O
conditions O
. O


the O
enhancement O
of O
O2Ti B-MAT
sensitivity B-PRO
to I-PRO
CO I-PRO
gas I-PRO
is O
believed O
to O
originate O
from O
well O
- O
dispersed O
metallic B-PRO
and O
Cu B-MAT
oxides I-MAT
, O
which O
are O
known O
catalysts B-APL
for O
the O
oxidation B-APL
of I-APL
CO I-APL
gas I-APL
. O


when O
the O
oxidation B-SMT
temperature O
was O
increased O
to O
<nUm> O
° O
C O
, O
the O
strongly O
bound O
CuO B-MAT
particles B-DSC
dissociated O
, O
and O
the O
response O
changed O
to O
p B-PRO
- I-PRO
type I-PRO
. O


it O
is O
proposed O
that O
the O
segregation O
induces O
a O
conduction B-PRO
pathway I-PRO
through O
CuO B-MAT
. O


density B-CMT
functional I-CMT
studies I-CMT
of O
magneto B-PRO
- I-PRO
optic I-PRO
properties I-PRO
of O
CdCoS B-MAT


density B-CMT
functional I-CMT
calculations I-CMT
are O
performed O
to O
investigate O
the O
structural B-PRO
, O
electronic B-PRO
, O
magnetic B-PRO
and O
optical B-PRO
properties I-PRO
of O
Cd1-xCoxS B-MAT
( I-MAT
<nUm> I-MAT
≤ I-MAT
x I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT
in O
cubic B-SPL
zinc I-SPL
- I-SPL
blende I-SPL
structure O
. O


accurate O
exchange B-CMT
potential I-CMT
modified I-CMT
becke I-CMT
and I-CMT
johnson I-CMT
( O
mBJ B-CMT
) O
within O
the O
FP B-CMT
- I-CMT
FLAPW I-CMT
method I-CMT
has O
been O
used O
in O
the O
calculations O
. O


lattice B-PRO
constant I-PRO
of O
the O
alloy B-DSC
decreases O
while O
band B-PRO
gap I-PRO
first O
decreased O
and O
then O
increased O
with O
increased O
in O
Co B-MAT
concentration O
. O


the O
decrease O
in O
the O
band B-PRO
gap I-PRO
of O
CdS B-MAT
substituted O
Co B-MAT
<nUm> O
% O
is O
because O
of O
the O
exchange B-PRO
interaction I-PRO
between O
co-3d O
and O
s-3p O
state O
. O


the O
ferromagnetic B-PRO
nature O
of O
material O
is O
due O
the O
spin B-PRO
polarization I-PRO
of O
co-3d O
state O
and O
the O
magnetization B-PRO
of O
the O
compound O
is O
increased O
with O
increased O
in O
Co B-MAT
concentration O
. O


the O
band B-PRO
gap I-PRO
energy I-PRO
varies O
mostly O
in O
visible O
region O
of O
the O
electromagnetic O
spectrum O
; O
therefore O
the O
material O
is O
precious O
for O
solar B-APL
cell I-APL
application O
. O


the O
optical B-PRO
properties I-PRO
like O
dielectric B-PRO
constant I-PRO
, O
index B-PRO
of I-PRO
refraction I-PRO
and O
reflectivity B-PRO
are O
also O
calculated O
. O


superior O
photocatalytic B-PRO
behaviour I-PRO
of O
novel O
1D B-DSC
nanobraid I-DSC
and O
nanoporous B-DSC
a-Fe2O3 B-MAT
structures O


we O
have O
produced O
novel O
nanostructures B-DSC
of O
pure O
and O
ceramic B-DSC
a-Fe2O3 B-MAT
using O
electrospinning B-SMT
, O
followed O
by O
annealing B-SMT
at O
<nUm> O
° O
C O
for O
<nUm> O
h O
with O
ramp O
rate O
of O
<nUm> O
° O
C O
min-1 O
. O


electron B-CMT
microscopy I-CMT
clearly O
reveals O
the O
novel O
morphologies B-PRO
, O
namely O
nanobraids B-DSC
and O
nanoporous B-DSC
a-Fe2O3 B-MAT
, O
suggesting O
that O
the O
precursor O
, O
( O
iron(III) O
acetylacetonate O
, O
( O
fe(acac)3 O
) O
) O
to O
polyvinylpyrrolidone O
( O
PVP O
) O
ratio O
greatly O
influences O
structural B-PRO
transformations I-PRO
of O
Fe2O3 B-MAT
. O


<nUm> O
wt O
% O
of O
fe(acac)3 O
/ O
PVP O
solution O
used O
for O
electrospinning B-SMT
at O
<nUm> O
kV O
a O
potential O
produced O
nanobraid B-DSC
- I-DSC
like I-DSC
ceramic I-DSC
a-Fe2O3 B-MAT
, O
indicating O
that O
binodal O
phase O
separation O
is O
predominant O
at O
this O
ratio O
. O


on O
the O
other O
hand O
, O
the O
electrospinning B-SMT
of O
<nUm> O
wt O
% O
of O
fe(acac)3 O
/ O
PVP O
solution O
induces O
spinodal O
phase O
separation O
that O
results O
in O
the O
formation O
of O
nanoporous B-DSC
ceramic I-DSC
a-Fe2O3 B-MAT
fibers B-DSC
. O


the O
nanobraids B-DSC
and O
nanoporous B-DSC
ceramic I-DSC
a-Fe2O3 B-MAT
exhibit O
superior O
photocatalytic B-PRO
performances I-PRO
of O
up O
to O
<nUm> O
% O
and O
<nUm> O
% O
for O
the O
organic O
dye O
, O
congo O
red O
( O
CR O
) O
in O
the O
shorter O
time O
of O
<nUm> O
min O
under O
photoirradiation O
. O


it O
is O
concluded O
that O
the O
presence O
of O
the O
porous B-DSC
surface I-DSC
and O
smaller O
crystallite B-PRO
size I-PRO
in O
the O
a-Fe2O3 B-MAT
nanostructures B-DSC
act O
as O
active O
catalytic B-PRO
centers I-PRO
and O
play O
a O
key O
role O
in O
allowing O
effective O
interaction O
between O
organic O
dye O
and O
a-Fe2O3 B-MAT
, O
in O
turn O
enhance O
photocatalytic B-PRO
degradation I-PRO
performance I-PRO
. O


microstructure B-PRO
, O
surface B-CMT
characterization I-CMT
and O
long B-PRO
- I-PRO
term I-PRO
stability I-PRO
of O
new O
quaternary O
Ti-Zr-Ta-Ag B-MAT
alloy B-DSC
for O
implant B-APL
use O


the O
novel O
Ti-20Zr-5Ta-2Ag B-MAT
alloy B-DSC
was O
characterised O
concerning O
its O
microstructure B-PRO
, O
morphology B-PRO
, O
mechanical B-PRO
properties I-PRO
, O
its O
passive O
film B-DSC
composition B-PRO
and O
thickness O
, O
its O
long B-PRO
- I-PRO
term I-PRO
electrochemical I-PRO
stability I-PRO
, O
corrosion B-PRO
resistance I-PRO
, O
ion B-PRO
release I-PRO
rate I-PRO
in O
ringer O
solution O
of O
acid O
, O
neutral O
and O
alkaline O
pH O
values O
and O
antibacterial B-PRO
activity I-PRO
. O


the O
new O
alloy B-DSC
has O
a O
crystalline B-DSC
α B-PRO
microstructure I-PRO
( O
by O
XRD B-CMT
) O
. O


long B-CMT
- I-CMT
term I-CMT
XPS I-CMT
and O
SEM B-CMT
analyses O
show O
the O
thickening O
of O
the O
passive B-PRO
film B-DSC
and O
the O
deposition O
of O
hydroxyapatite B-MAT
in O
neutral O
and O
alkaline O
ringer O
solution O
. O


the O
values O
of O
the O
electrochemical B-PRO
parameters I-PRO
confirm O
the O
over O
time O
stability B-PRO
of O
the O
new O
alloy B-DSC
passive B-PRO
film B-DSC
. O


all O
corrosion B-PRO
parameters I-PRO
have O
very O
favourable O
values O
in O
time O
which O
attest O
a O
high O
resistance B-PRO
to I-PRO
corrosion I-PRO
. O


impedance B-CMT
spectra I-CMT
evinced O
a O
bi-layered B-DSC
passive B-PRO
film B-DSC
formed O
by O
the O
barrier O
, O
insulating B-PRO
layer B-DSC
and O
the O
porous B-DSC
layer I-DSC
. O


the O
monitoring O
of O
the O
open B-PRO
circuit I-PRO
potentials I-PRO
indicated O
the O
stability B-PRO
of O
the O
protective B-APL
layers I-APL
and O
their O
thickening O
in O
time O
. O


the O
new O
alloy B-DSC
releases O
( O
by O
ICP-MS B-CMT
measurements O
) O
very O
low O
quantities O
of O
Ti B-MAT
, O
Zr B-MAT
, O
Ag B-MAT
ions O
and O
no O
Ta B-MAT
ions O
. O


the O
new O
alloy B-DSC
exhibits O
a O
low O
antibacterial B-PRO
activity I-PRO
. O


mechanical B-PRO
properties I-PRO
of O
cubic B-SPL
BC2N B-MAT
, O
a O
new O
superhard B-PRO
phase O


A O
new O
superhard B-PRO
phase O
, O
cubic B-SPL
BC2N B-MAT
, O
has O
very O
recently O
been O
synthesized O
by O
direct O
conversion O
of O
graphite B-MAT
- O
like O
BN B-MAT
– I-MAT
C I-MAT
solid B-DSC
solutions I-DSC
at O
<nUm> O
GPa O
and O
<nUm> O
K O
. O


the O
hardness B-PRO
, O
young B-PRO
's I-PRO
modulus I-PRO
, O
fracture B-PRO
toughness I-PRO
and O
structure B-PRO
of O
this O
phase O
have O
been O
examined O
using O
micro- B-CMT
and O
nanoindentation B-CMT
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
. O


the O
hardness B-PRO
and O
elastic B-PRO
modulus I-PRO
values O
( O
e B-PRO
, O
g B-PRO
) O
of O
the O
c-BC2N B-MAT
are O
intermediate O
between O
diamond B-MAT
and O
cubic B-SPL
boron B-MAT
nitride I-MAT
, O
which O
makes O
this O
new O
phase O
the O
hardest B-PRO
known O
solid O
after O
diamond B-MAT
. O


effect O
of O
rare O
earth O
dopants O
on O
structural B-PRO
and O
mechanical B-PRO
properties I-PRO
of O
nanoceria B-MAT
synthesized O
by O
combustion B-SMT
method I-SMT


structural B-PRO
characteristics I-PRO
of O
combustion B-SMT
synthesized I-SMT
, O
calcined B-SMT
and O
densified B-SMT
pure B-DSC
and O
doped B-DSC
nanoceria B-MAT
with O
tri-valent O
cations O
of O
Er B-MAT
, O
Y B-MAT
, O
Gd B-MAT
, O
Sm B-MAT
and O
Nd B-MAT
were O
analyzed O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
high B-CMT
resolution I-CMT
transmission I-CMT
electron I-CMT
microscopy I-CMT
( O
HRTEM B-CMT
) O
. O


the O
results O
showed O
that O
the O
as-synthesized B-DSC
and O
calcined B-SMT
nanopowders B-DSC
were O
mesoporous B-DSC
and O
calculated O
lattice B-PRO
parameters I-PRO
were O
close O
to O
theoretical O
ion B-CMT
- I-CMT
packing I-CMT
model I-CMT
. O


the O
effect O
of O
dopants O
on O
elastic B-PRO
modulus I-PRO
, O
microhardness B-PRO
and O
fracture B-PRO
toughness I-PRO
of O
sintered B-SMT
pure B-DSC
and O
doped B-DSC
ceria B-MAT
were O
investigated O
. O


it O
was O
observed O
that O
tri-valent O
cation O
dopants O
increased O
the O
hardness B-PRO
of O
the O
ceria B-MAT
, O
whereas O
the O
fracture B-PRO
toughness I-PRO
and O
elastic B-PRO
modulus I-PRO
were O
decreased O
. O


determination O
of O
the O
energy B-PRO
relaxation I-PRO
time I-PRO
in O
GaSb B-MAT
from O
microwave B-CMT
harmonic I-CMT
mixing I-CMT
and O
transport B-PRO
phenomena I-PRO


the O
energy B-PRO
relaxation I-PRO
time I-PRO
t[?] I-PRO
of O
GaSb B-MAT
has O
been O
determined O
independently O
from O
microwave B-CMT
harmonic I-CMT
mixing I-CMT
experiments O
in O
the O
range O
of O
<nUm> O
– O
<nUm> O
K O
and O
from O
the O
current B-PRO
- I-PRO
voltage I-PRO
characteristics I-PRO
at O
<nUm> O
and O
<nUm> O
K O
. O


from O
measurements O
of O
the O
i.r. B-PRO
faraday I-PRO
effect I-PRO
at O
<nUm> O
K O
valley B-PRO
populations I-PRO
as O
a O
function O
of O
the O
electric O
field O
strength O
are O
obtained O
which O
are O
in O
agreement O
with O
values O
calculated O
with O
help O
of O
the O
energy B-PRO
relaxation I-PRO
time I-PRO
obtained O
by O
methods O
mentioned O
before O
. O


for O
the O
evaluation O
of O
the O
data O
a O
two B-CMT
- I-CMT
band I-CMT
model I-CMT
has O
been O
used O
. O


the O
results O
obtained O
from O
the O
microwave B-CMT
experiments I-CMT
are O
extrapolated O
to O
<nUm> O
and O
<nUm> O
K O
assuming O
polar B-PRO
optical I-PRO
mode I-PRO
scattering I-PRO
. O


good O
agreement O
of O
these O
values O
and O
the O
results O
obtained O
from O
the O
current B-PRO
- I-PRO
voltage I-PRO
characteristics I-PRO
and O
the O
faraday B-CMT
measurements I-CMT
was O
found O
. O


the O
values O
for O
<nUm> O
and O
<nUm> O
K O
are O
<nUm> O
× O
<nUm> O
− O
<nUm> O
sec O
and O
approximately O
1*6 O
× O
<nUm> O
− O
<nUm> O
sec O
, O
respectively O
. O


the O
current B-PRO
detour I-PRO
effect I-PRO
observed O
on O
materials O
with O
random O
microstucture B-PRO
: O
experimental O
evidence O
from O
li3x B-MAT
la2 I-MAT
/ I-MAT
3-x I-MAT
O3Ti I-MAT
studied O
by O
impedance B-CMT
spectroscopy I-CMT


impedance B-CMT
spectroscopy I-CMT
( O
IS B-CMT
) O
has O
been O
used O
to O
study O
the O
influence O
on O
the O
low O
frequency O
part O
of O
the O
impedance B-PRO
diagrams I-PRO
of O
the O
microstructure B-PRO
of O
a O
fast O
ionic B-PRO
conductor I-PRO
, O
Li3xLa2 B-MAT
/ I-MAT
3-xTiO3 I-MAT
with I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
( O
named O
hereafter O
LLTO B-MAT
) O
. O


this O
oxide B-MAT
has O
been O
synthesised O
by O
sol B-SMT
– I-SMT
gel I-SMT
method O
. O


after O
synthesis O
, O
the O
powder B-DSC
of O
LLTO B-MAT
displays O
a O
large O
distribution O
of O
grain B-PRO
size I-PRO
and O
agglomerates O
. O


the O
grain B-PRO
size I-PRO
distribution O
and O
the O
porosity B-PRO
of O
the O
ceramic B-DSC
have O
been O
changed O
by O
heat B-SMT
- I-SMT
treatment I-SMT
from O
<nUm> O
° O
C O
to O
<nUm> O
° O
C O
in O
air O
. O


the O
impedance B-PRO
spectra O
of O
these O
ceramics B-DSC
, O
recorded O
at O
different O
temperatures O
from O
room O
temperature O
( O
RT O
) O
to O
<nUm> O
° O
C O
, O
show O
a O
low O
- O
frequency O
depressed O
arc O
, O
which O
is O
characteristic O
of O
the O
grain B-PRO
boundary I-PRO
response I-PRO
of O
the O
ceramic B-DSC
. O


its O
shape O
depends O
strongly O
on O
the O
heat B-SMT
- I-SMT
treatment I-SMT
of O
the O
ceramic B-DSC
, O
and O
therefore O
, O
on O
its O
microstructure B-PRO
. O


it O
is O
a O
simple O
arc O
when O
the O
pellet B-DSC
is O
well O
sintered B-SMT
but O
becomes O
very O
complex O
for O
non-sintered O
ceramics B-DSC
with O
high O
resistive B-PRO
grain I-PRO
boundary I-PRO
and O
pores B-PRO
. O


the O
observed O
“ O
fish O
” O
shape O
indicates O
the O
presence O
of O
current O
“ O
detours O
effect O
” O
in O
the O
material O
. O


this O
effect O
means O
that O
current O
detours O
around O
blocking O
grain B-PRO
boundary I-PRO
and O
/ O
or O
pores B-PRO
occur O
to O
lower O
the O
impedance B-PRO
. O


consequently O
, O
the O
brick B-CMT
layer I-CMT
model I-CMT
( O
BLM B-CMT
) O
, O
which O
assumes O
an O
ideal O
microstructure B-PRO
, O
and O
then O
no O
current O
“ O
detours O
effect O
” O
, O
can O
not O
be O
used O
to O
analyse O
these O
impedance B-PRO
data O
. O


preparation O
and O
characterization O
of O
La2-xCexFe14B B-MAT
compounds O


pseudoternary O
La2-xCexFe14B B-MAT
compounds O
having O
the O
tetragonal B-SPL
BFe14Nd2 B-MAT
crystal B-PRO
structure I-PRO
have O
been O
prepared O
over O
the O
entire O
<nUm> O
≤ O
x O
≤ O
<nUm> O
composition O
range O
. O


with O
appropriate O
heat B-SMT
treatment I-SMT
schedules O
, O
samples O
which O
were O
single B-DSC
- I-DSC
phase I-DSC
or O
nearly O
so O
were O
obtained O
for O
x O
= O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
. O


lattice B-PRO
constants I-PRO
( O
a B-PRO
, O
c B-PRO
) O
, O
curie B-PRO
temperature I-PRO
( O
TC B-PRO
) O
, O
and O
magnetization B-PRO
data O
are O
reported O
for O
each O
of O
these O
materials O
. O


we O
find O
that O
( O
i O
) O
a B-PRO
, O
c B-PRO
, O
and O
TC B-PRO
decrease O
linearly O
with O
Ce B-PRO
content I-PRO
x O
; O
( O
ii O
) O
the O
magnetization B-PRO
at O
<nUm> O
K O
is O
essentially O
independent O
of O
x O
; O
and O
( O
iii O
) O
there O
is O
no O
evidence O
of O
the O
occurence O
of O
ce3+ O
over O
any O
range O
in O
x O
. O


characterization O
of O
ODS O
- O
tungsten B-MAT
microwave B-SMT
- I-SMT
sintered I-SMT
from O
sol B-SMT
– I-SMT
gel I-SMT
prepared O
nano-powders B-DSC


nano-sized B-DSC
W B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
La2O3 I-MAT
and O
W B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
O3Y2 I-MAT
powders B-DSC
were O
synthesized O
by O
sol B-SMT
– I-SMT
gel I-SMT
method O
followed O
by O
hydrogen B-SMT
reduction I-SMT
. O


the O
average O
particle O
size O
of O
the O
powders B-DSC
is O
smaller O
than O
<nUm> O
nm O
. O


microwave B-SMT
sintering I-SMT
method O
was O
used O
for O
the O
consolidation O
of O
tungsten B-MAT
samples O
, O
and O
a O
relatively O
low O
sintering B-SMT
temperature O
( O
<nUm> O
° O
C O
) O
and O
short B-SMT
soaking I-SMT
time O
( O
<nUm> O
min O
) O
were O
used O
to O
reduce O
the O
grains B-PRO
growth O
. O


nano-sized B-DSC
oxide B-MAT
particles B-DSC
with O
a O
size O
distribution O
of O
<nUm> O
– O
<nUm> O
nm O
were O
homogeneously O
dispersed O
in O
the O
tungsten B-MAT
matrix O
. O


the O
relative B-PRO
density I-PRO
, O
average O
grain B-PRO
size I-PRO
and O
vickers B-PRO
micro-hardness I-PRO
of O
the O
microwave B-SMT
- I-SMT
sintered I-SMT
W B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
La2O3 I-MAT
and O
W B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
O3Y2 I-MAT
samples O
are O
<nUm> O
% O
and O
<nUm> O
% O
, O
<nUm> O
and O
<nUm> O
mm O
, O
<nUm> O
and O
<nUm> O
GPa O
, O
respectively O
. O


the O
W B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
O3Y2 I-MAT
samples O
showed O
better O
sinterability B-PRO
, O
finer O
grains B-PRO
, O
and O
higher O
hardness B-PRO
than O
the O
W B-MAT
– I-MAT
<nUm> I-MAT
% I-MAT
La2O3 I-MAT
samples O
. O


effect O
of O
Co B-MAT
doping O
on O
structural B-PRO
, O
morphological B-PRO
and O
LPG B-PRO
sensing I-PRO
properties I-PRO
of O
nanocrystalline B-DSC
OZn B-MAT
thin B-DSC
films I-DSC


nanocrystalline B-DSC
cobalt B-MAT
doped B-DSC
zinc B-MAT
oxide I-MAT
( O
CZO B-MAT
) O
thin B-DSC
films I-DSC
were O
deposited O
on O
to O
the O
corning B-MAT
glass I-MAT
substrates B-DSC
by O
spray B-SMT
pyrolysis I-SMT
technique O
using O
zinc O
acetate O
and O
cobaltous O
nitrate O
as O
precursors O
. O


structural B-PRO
, O
morphological B-PRO
, O
photoluminescence B-CMT
and O
gas B-PRO
sensing I-PRO
properties I-PRO
of O
the O
films B-DSC
with O
various O
Co B-MAT
doping O
concentrations O
were O
investigated O
. O


XRD B-CMT
patterns O
confirm O
that O
, O
films B-DSC
are O
polycrystalline B-DSC
with O
hexagonal B-SPL
( O
wurtzite B-SPL
) O
crystal B-PRO
structure I-PRO
. O


XPS B-CMT
reveals O
films B-DSC
are O
sub-stoichiometric B-DSC
in O
nature O
with O
Co B-MAT
present O
in O
two O
chemical O
states O
. O


SEM B-CMT
images O
show O
the O
films B-DSC
are O
compact O
, O
densely B-PRO
packed I-PRO
with O
hexagonal B-SPL
flakes B-DSC
and O
spherical O
grains O
on O
the O
surface B-DSC
. O


the O
direct B-PRO
band I-PRO
- I-PRO
gap I-PRO
energy I-PRO
increases O
from O
<nUm> O
to O
<nUm> O
eV O
with O
cobalt B-MAT
doping B-SMT
concentration O
. O


LPG B-PRO
response I-PRO
of O
the O
film B-DSC
increased O
with O
Co B-PRO
concentration I-PRO
up O
to O
<nUm> O
at O
% O
and O
decreased O
thereafter O
. O


Pd B-MAT
sensitized O
2at O
% O
CZO B-MAT
thin B-DSC
film I-DSC
shows O
<nUm> O
% O
gas B-PRO
response I-PRO
as O
compared O
with O
<nUm> O
% O
for O
un-sensitized O
CZO B-MAT
thin B-DSC
film I-DSC
. O


film B-DSC
shows O
stable O
gas B-PRO
response I-PRO
even O
for O
<nUm> O
min O
in O
presence O
of O
LPG O
. O


effects O
of O
processing O
parameters O
on O
density B-PRO
and O
electric B-PRO
properties I-PRO
of O
electric O
ceramic B-DSC
compacted B-SMT
by O
low B-SMT
- I-SMT
voltage I-SMT
electromagnetic I-SMT
compaction I-SMT


In O
this O
research O
, O
low B-SMT
- I-SMT
voltage I-SMT
electromagnetic I-SMT
compaction I-SMT
( O
EMC B-SMT
) O
was O
applied O
to O
compact B-SMT
O2Ti B-MAT
and O
PZT B-MAT
powders B-DSC
in O
the O
indirect O
way O
. O


after O
selecting O
the O
appropriate O
processing O
parameters O
, O
O2Ti B-MAT
and O
PZT B-MAT
ceramics B-DSC
of O
higher O
density B-PRO
and O
better O
electrical B-PRO
properties I-PRO
were O
produced O
compared O
with O
traditional O
static B-SMT
compaction I-SMT
. O


the O
microstructures B-PRO
of O
two O
ceramics B-DSC
produced O
by O
two O
above-mentioned O
methods O
respectively O
show O
that O
, O
the O
average O
grain B-PRO
size I-PRO
of O
O2Ti B-MAT
and O
PZT B-MAT
compacted O
by O
low B-SMT
- I-SMT
voltage I-SMT
EMC I-SMT
are O
about O
<nUm> O
mm O
and O
<nUm> O
mm O
which O
are O
smaller O
than O
that O
by O
static B-SMT
compaction I-SMT
respectively O
( O
<nUm> O
mm O
and O
<nUm> O
mm O
) O
under O
the O
same O
sintered B-SMT
condition O
. O


discharge B-PRO
voltage I-PRO
and O
charge B-PRO
capacitance I-PRO
are O
important O
factors O
to O
the O
green B-PRO
density I-PRO
and O
sintered B-SMT
part O
's O
density B-PRO
of O
each O
ceramics B-DSC
. O


meanwhile O
, O
O2Ti B-MAT
and O
PZT B-MAT
have O
their O
own O
discharge B-PRO
voltage I-PRO
range O
( O
<nUm> O
– O
<nUm> O
V O
for O
O2Ti B-MAT
and O
<nUm> O
– O
<nUm> O
V O
for O
PZT B-MAT
) O
, O
during O
which O
each O
ceramic B-DSC
powder I-DSC
could O
be O
pressed B-SMT
effectively O
. O


with O
the O
same O
condition O
of O
charge B-PRO
capacitance I-PRO
, O
as O
the O
discharge B-PRO
voltage I-PRO
increases O
toward O
a O
peak O
value O
, O
the O
green B-PRO
density I-PRO
and O
sintered B-SMT
part O
's O
density B-PRO
increase O
, O
then O
tend O
to O
decrease O
after O
that O
peak O
value O
. O


the O
green B-PRO
density I-PRO
and O
sintered B-SMT
part O
's O
density B-PRO
of O
each O
ceramic B-DSC
increase O
and O
the O
above O
peak O
discharge B-PRO
voltage I-PRO
decrease O
slightly O
, O
as O
charge B-PRO
capacitance I-PRO
enlarges O
in O
the O
range O
investigated O
. O


In O
addition O
, O
effects O
of O
pancake O
coil O
turns O
and O
field O
shaper O
structure O
on O
the O
ceramic B-DSC
density B-PRO
were O
investigated O
. O


In O
most O
of O
cases O
investigated O
, O
the O
higher O
the O
ceramic B-DSC
part O
's O
density B-PRO
, O
the O
better O
the O
dielectric B-PRO
constants I-PRO
of O
O2Ti B-MAT
parts O
and O
the O
piezoelectric B-PRO
constants I-PRO
of O
PZT B-MAT
parts O
. O


magnetic B-PRO
domain I-PRO
evolution O
and O
wall B-PRO
energy I-PRO
in O
BFe14Nd2 B-MAT
melt B-SMT
spun I-SMT
allos B-DSC


the O
evolution O
of O
magnetic B-PRO
domains I-PRO
in O
BFe14Nd2 B-MAT
melt B-SMT
spun I-SMT
alloys B-DSC
is O
observed O
by O
lorentz B-CMT
electron I-CMT
microscopy I-CMT
in O
grains O
the O
c-axis O
of O
which O
is O
nearly O
normal O
to O
the O
ribbon O
plane O
. O


A O
domain B-PRO
wall I-PRO
energy I-PRO
value O
of O
<nUm> O
mJ O
m-2 O
is O
estimated O
from O
the O
domain B-PRO
wall I-PRO
thickness I-PRO
revealed O
by O
foucault B-CMT
mode I-CMT
. O


the O
values O
of O
magnetic B-PRO
bubble I-PRO
diameters I-PRO
and O
collapse B-PRO
fields I-PRO
are O
discussed O
. O


the O
behavior O
of O
MCrAlY B-MAT
coatings B-APL
on O
AlNi3 B-MAT
- O
base O
superalloy B-DSC


this O
work O
is O
concerned O
with O
AlCrNiY B-MAT
and O
AlCoCrNiY B-MAT
coatings B-APL
deposited O
on O
the O
superalloy B-DSC
IC-6 B-MAT
( O
AlNi3 B-MAT
- O
base O
superalloy B-DSC
) O
by O
arc B-SMT
ion I-SMT
plating I-SMT
( O
AIP B-SMT
) O
. O


the O
results O
indicated O
that O
the O
presence O
of O
Al B-MAT
and O
Mo B-MAT
in O
alloy B-DSC
IC-6 B-MAT
impeded O
Cr B-MAT
atoms O
moving O
from O
coatings B-APL
to O
substrates B-DSC
during O
the O
deposition O
process O
. O


As O
a O
consequence O
, O
the O
distribution O
of O
Cr B-MAT
is O
well O
proportioned O
in O
both O
AlCrNiY B-MAT
and O
AlCoCrNiY B-MAT
coatings B-APL
. O


vacuum B-SMT
heat I-SMT
treatment I-SMT
drastically O
increased O
diffusivities B-PRO
and O
the O
coating B-APL
became O
more O
uniform O
. O


the O
interdiffusion O
also O
led O
to O
the O
phase B-PRO
transformation I-PRO
in O
the O
coatings B-APL
. O


although O
g'-Ni3Al B-MAT
and O
g-Ni B-MAT
were O
still O
the O
major O
phases O
in O
the O
coating B-APL
, O
their O
lattice B-PRO
constant I-PRO
a0 I-PRO
decreased O
. O


the O
results O
of O
isothermal B-SMT
oxidation I-SMT
showed O
that O
the O
oxidation B-PRO
behavior I-PRO
of O
coatings B-APL
obeyed O
the O
parabolic B-CMT
rate I-CMT
law I-CMT
. O


the O
oxidation B-PRO
resistance I-PRO
was O
not O
influenced O
very O
much O
by O
the O
presence O
of O
Co B-MAT
in O
the O
AlCrNiY B-MAT
coating B-APL
at O
<nUm> O
° O
C O
static O
atmosphere O
. O


AlCoCrNiY B-MAT
coating B-APL
had O
poorer O
oxidation B-PRO
resistance I-PRO
than O
AlCrNiY B-MAT
coating B-APL
when O
they O
were O
exposed O
at O
<nUm> O
° O
C O
. O


growth O
of O
Ba3Cu3In4O12 B-MAT
single B-DSC
- I-DSC
crystal I-DSC
whiskers I-DSC


single B-DSC
- I-DSC
crystal I-DSC
whiskers I-DSC
of O
Ba3Cu3In4O12 B-MAT
were O
successfully O
grown O
by O
sintering B-SMT
precursor O
pellets B-DSC
with O
a O
nominal O
composition B-PRO
of O
Ba4In4Cu3Te0.5Ca0.5Ox B-MAT
. O


the O
grown O
whiskers B-DSC
were O
typically O
<nUm> O
– O
<nUm> O
mm O
in O
length O
, O
<nUm> O
– O
<nUm> O
mm O
in O
width O
, O
and O
<nUm> O
– O
<nUm> O
mm O
in O
thickness O
. O


Te B-MAT
and O
Ca B-MAT
were O
not O
detected O
in O
the O
whiskers B-DSC
by O
electron B-CMT
probe I-CMT
microanalysis I-CMT
. O


the O
precursor O
pellets B-DSC
obtained O
after O
the O
whisker B-DSC
growth O
were O
composed O
of O
Ba3Cu3In4O12 B-MAT
and O
Ba2CaO6Te B-MAT
. O


the O
presence O
of O
the O
Ba2CaO6Te B-MAT
plays O
an O
important O
role O
as O
a O
flux O
for O
enhancing O
the O
growth O
of O
Ba3Cu3In4O12 B-MAT
whiskers B-DSC
. O


sorption B-PRO
behavior I-PRO
of O
heavy O
metals O
on O
poorly B-DSC
crystalline I-DSC
manganese B-MAT
oxides I-MAT
: O
roles O
of O
water O
conditions O
and O
light O


the O
objective O
of O
this O
study O
was O
to O
determine O
the O
effects O
of O
solution O
properties O
and O
light O
on O
the O
metal O
uptake O
and O
release O
in O
a O
nanosized B-DSC
, O
poorly B-DSC
crystalline I-DSC
manganese B-MAT
oxide I-MAT
( O
d-MnO2 B-MAT
) O
system O
. O


the O
results O
from O
synthetic O
water O
matrices O
revealed O
that O
the O
aggregation B-PRO
state I-PRO
was O
strongly O
affected O
by O
ionic O
strength O
, O
ca2+ O
, O
and O
humic O
acid O
, O
and O
the O
particle O
aggregation O
subsequently O
changed O
the O
ability O
of O
d-MnO2 B-MAT
to O
adsorb O
and O
sequester O
heavy O
metal O
ions O
( O
Cu(II) B-MAT
) O
. O


the O
extent O
of O
Cu(II) B-MAT
uptake O
onto O
d-MnO2 B-MAT
exhibited O
a O
negative O
correlation O
with O
the O
attachment B-PRO
efficiency I-PRO
value O
, O
which O
suggested O
that O
a O
lower O
sorption B-PRO
capacity I-PRO
could O
be O
achieved O
under O
aggregation O
- O
inducing O
conditions O
. O


upon O
exposure O
to O
light O
, O
the O
adsorbed O
Cu(II) B-MAT
was O
released O
from O
the O
d-MnO2 B-MAT
surface B-DSC
via O
photoinduced B-SMT
dissolution I-SMT
of O
MnO2 B-MAT
. O


the O
concentration O
of O
Cu(II) B-MAT
desorbed O
was O
substantially O
higher O
when O
the O
humic O
acid O
was O
present O
together O
with O
ca2+ O
. O


the O
present O
investigation O
enables O
us O
to O
better O
understand O
the O
adsorption O
– O
desorption O
processes O
of O
heavy O
metals O
occurring O
at O
the O
MnO2 B-MAT
– O
solution O
interface O
in O
response O
to O
common O
environmental O
stimuli O
. O


synthesis O
and O
characterization O
of O
CdS B-MAT
doped B-DSC
O2Ti B-MAT
nanocrystalline B-DSC
powder I-DSC
: O
A O
spectroscopic B-CMT
study I-CMT


this O
report O
aimed O
to O
study O
the O
effect O
of O
CdS B-MAT
doping O
in O
O2Ti B-MAT
on O
the O
phase O
transformation O
of O
O2Ti B-MAT
from O
anatase B-SPL
to O
rutile B-SPL
using O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
raman B-CMT
spectroscopy I-CMT
. O


CdS B-MAT
- O
doped B-DSC
O2Ti B-MAT
nanocomposites B-DSC
have O
been O
prepared O
and O
characterized O
using O
fourier B-CMT
transform I-CMT
infrared I-CMT
spectroscopy I-CMT
( O
FTIR B-CMT
) O
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
( O
TEM B-CMT
) O
. O


we O
have O
observed O
that O
contrary O
to O
bare O
O2Ti B-MAT
, O
phase O
transformation O
of O
O2Ti B-MAT
from O
anatase B-SPL
to O
rutile B-SPL
is O
hindered O
when O
doped B-DSC
with O
CdS B-MAT
at O
high O
temperature O
. O


raman B-CMT
spectroscopy I-CMT
is O
found O
to O
be O
more O
sensitive O
for O
detection O
of O
the O
surface B-DSC
of O
O2Ti B-MAT
as O
compared O
to O
XRD B-CMT
. O


aerospace B-APL
application I-APL
on O
Al B-MAT
<nUm> I-MAT
with O
reinforced O
– O
N4Si3 B-MAT
, O
AlN B-MAT
and O
B2Zr B-MAT
in-situ O
composites B-DSC


In O
this O
study O
, O
the O
Al B-MAT
<nUm> I-MAT
aluminium I-MAT
alloy B-DSC
is O
reinforced O
with O
N4Si3 B-MAT
( O
silicon B-MAT
nitride I-MAT
) O
, O
AlN B-MAT
( O
aluminium B-MAT
nitride I-MAT
) O
& O
B2Zr B-MAT
( O
zirconium B-MAT
boride I-MAT
) O
in O
wt. O
% O
of O
( O
<nUm> O
) O
by O
stir B-SMT
casting I-SMT
process O
. O


the O
tribological B-PRO
and O
mechanical B-PRO
properties I-PRO
of O
these O
composites B-DSC
particles I-DSC
were O
investigated O
under O
dry O
sliding O
conditions O
. O


the O
mechanical B-PRO
properties I-PRO
of O
the O
composites B-DSC
is O
studied O
by O
conducting O
various O
test O
like O
hardness B-CMT
test I-CMT
, O
tensile B-CMT
test I-CMT
and O
compression B-CMT
test I-CMT
to O
understand O
the O
relationship O
between O
the O
wt. O
% O
of O
reinforcement O
and O
the O
matrix O
metal B-PRO
. O


this O
is O
followed O
by O
the O
micro B-CMT
structural I-CMT
study I-CMT
to O
examine O
the O
bond O
formation O
and O
effect O
of O
grain B-PRO
size I-PRO
reduction O
due O
to O
the O
addition O
of O
reinforcement O
. O


the O
taguchi B-CMT
L25 I-CMT
orthogonal I-CMT
array I-CMT
is O
used O
to O
optimize O
the O
process O
parameters O
to O
obtain O
minimum O
wear B-PRO
rate I-PRO
and O
the O
analysis B-CMT
of I-CMT
variance I-CMT
( O
ANOVA B-CMT
) O
was O
used O
to O
investigate O
the O
influence O
of O
parameter O
affecting O
the O
wear B-PRO
rate I-PRO
. O


the O
scanning B-CMT
electron I-CMT
microscope I-CMT
( O
SEM B-CMT
) O
analysis O
is O
carried O
out O
to O
understand O
the O
wear B-PRO
mechanism I-PRO
of O
worn O
out O
surfaces B-DSC
and O
the O
wear O
debris O
. O


the O
manipulate O
of O
the O
wt. O
% O
of O
reinforcements O
and O
applied O
load O
on O
the O
wear B-PRO
rate I-PRO
, O
wear B-PRO
resistance I-PRO
, O
specific B-PRO
wear I-PRO
rate I-PRO
, O
coefficient B-PRO
of I-PRO
wear I-PRO
rate I-PRO
and O
the O
mass O
loss O
were O
premeditated O
using O
the O
pin B-CMT
- I-CMT
on I-CMT
- I-CMT
disk I-CMT
method I-CMT
. O


‘ O
umkehreffekt B-PRO
’ O
and O
crystal B-PRO
symmetry I-PRO
of O
bismuth B-MAT


the O
magneto B-PRO
- I-PRO
seebeck I-PRO
effect I-PRO
in O
bismuth B-MAT
is O
measured O
along O
a O
bisectrix O
direction O
y O
with O
the O
magnetic O
field O
rotating O
in O
the O
xz O
- O
plane O
. O


the O
asymmetry O
due O
to O
the O
‘ O
umkehreffekt B-PRO
’ O
is O
related O
to O
the O
sense O
of O
the O
binary O
axis O
. O


gamma O
ray O
induced O
thermoluminescence B-PRO
properties I-PRO
of O
eu3+ O
doped B-DSC
O2Sn B-MAT
phosphor B-APL


this O
paper O
reports O
the O
thermoluminescence B-PRO
properties I-PRO
of O
eu3+ O
doped B-DSC
O2Sn B-MAT
phosphors B-APL
synthesized O
by O
combustion B-SMT
method I-SMT
. O


the O
thermoluminescence B-CMT
( O
TL B-CMT
) O
studies O
were O
carried O
out O
after O
irradiating B-SMT
the O
sample O
by O
g-rays O
in O
the O
dose O
range O
100Gy O
to O
1KGy O
. O


the O
glow B-PRO
curves I-PRO
of O
g-irradiated B-SMT
phosphors B-APL
were O
resolved O
into O
two O
peaks O
, O
one O
centred O
at O
<nUm> O
° O
C O
and O
other O
at O
<nUm> O
° O
C O
. O


intensity O
of O
the O
glow O
peak O
increases O
linearly O
in O
the O
studied O
dose O
range O
of O
g-rays O
. O


kinetic B-PRO
parameters I-PRO
such O
as O
order B-PRO
of I-PRO
kinetics I-PRO
, O
trap B-PRO
depth I-PRO
and O
frequency B-PRO
factor I-PRO
associated O
with O
the O
glow O
peak O
were O
calculated O
by O
various O
glow B-CMT
curve I-CMT
methods I-CMT
. O


comparison O
of O
AlN B-MAT
thin B-DSC
films I-DSC
grown O
on O
sapphire B-MAT
and O
cubic B-SPL
- O
CSi B-MAT
substrates B-DSC
by O
LP B-CMT
- I-CMT
MOCVD I-CMT


the O
substrate B-DSC
dependence O
of O
AlN B-MAT
films B-DSC
grown O
by O
LP B-CMT
- I-CMT
MOCVD I-CMT
was O
investigated O
. O


on O
the O
sapphire B-MAT
c-plane O
hexagonal B-SPL
AlN B-MAT
starts O
to O
grow O
at O
<nUm> O
° O
C O
, O
where O
its O
c-axis O
is O
on O
the O
sapphire B-MAT
c-plane O
. O


when O
the O
temperature O
increases O
to O
<nUm> O
° O
C O
, O
the O
c-axis O
becomes O
parallel O
to O
the O
sapphire B-MAT
c-axis O
. O


on O
the O
3C B-MAT
– I-MAT
CSi I-MAT
substrate B-DSC
, O
hexagonal B-SPL
AlN B-MAT
grows O
with O
its O
c-axis O
on O
the O
( O
<nUm> O
) O
plane O
of O
CSi B-MAT
. O


laser B-SMT
- I-SMT
induced I-SMT
evaporation I-SMT
, O
reactivity O
and O
deposition O
of O
O2Zr B-MAT
, O
CeO2 B-MAT
, O
O5V2 B-MAT
and O
mixed O
Ce-V B-MAT
oxides I-MAT


it O
has O
been O
found O
that O
pulsed B-SMT
laser I-SMT
ablation I-SMT
has O
good O
potentiality O
for O
the O
deposition O
of O
O2Zr B-MAT
, O
CeO2 B-MAT
, O
O5V2 B-MAT
and O
mixed O
Ce-V B-MAT
oxides I-MAT
which O
are O
very O
important O
materials O
for O
their O
application O
in O
optics B-APL
and O
electrochromic B-APL
devices I-APL
. O


laser O
induced O
compositional O
changes O
of O
thin B-DSC
films I-DSC
in O
the O
ablation B-SMT
and O
deposition O
processes O
of O
these O
materials O
have O
been O
explored O
. O


the O
effect O
of O
the O
oxygen O
gas O
pressure O
on O
the O
thin B-DSC
film I-DSC
composition B-PRO
has O
been O
examined O
. O


the O
congruency O
of O
the O
process O
has O
been O
treated O
on O
the O
basis O
of O
a O
thermal O
mechanism O
of O
evaporation O
– O
decomposition O
of O
the O
compounds O
. O


an O
attempt O
to O
model O
the O
processes O
by O
means O
of O
a O
thermodynamic B-CMT
approach I-CMT
is O
reported O
. O


composition B-PRO
dependent O
room O
temperature O
structure B-PRO
, O
electric B-PRO
and O
magnetic B-PRO
properties I-PRO
in O
magnetoelectric B-PRO
Pb(Fe1 B-MAT
/ I-MAT
2Nb1 I-MAT
/ I-MAT
2)O3 I-MAT
Pb(Fe2 I-MAT
/ I-MAT
<nUm> I-MAT
W1 I-MAT
/ I-MAT
3)O3 I-MAT
solid B-DSC
- I-DSC
solutions I-DSC


we O
report O
on O
the O
studies O
of O
room O
temperature O
( O
RT O
) O
crystal B-PRO
structure I-PRO
, O
electric B-PRO
and O
magnetic B-PRO
properties I-PRO
of O
( B-MAT
1-x I-MAT
) I-MAT
Pb(Fe1 I-MAT
/ I-MAT
2Nb1 I-MAT
/ I-MAT
2)O3 I-MAT
– I-MAT
x I-MAT
Pb(Fe2 I-MAT
/ I-MAT
<nUm> I-MAT
W1 I-MAT
/ I-MAT
3)O3 I-MAT
( I-MAT
PFN1-x I-MAT
– I-MAT
PFWx I-MAT
) I-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
, I-MAT
<nUm> I-MAT
and I-MAT
<nUm> I-MAT
) I-MAT
solid B-DSC
solutions I-DSC
through O
the O
measurements O
of O
x-ray B-CMT
diffraction I-CMT
, O
FTIR B-CMT
, O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
, O
neutron B-CMT
diffraction I-CMT
, O
raman B-CMT
, O
magnetic B-CMT
, O
mossbauer B-CMT
and O
ferroelectric B-CMT
measurements I-CMT
. O


FTIR B-CMT
spectra O
showed O
two O
main O
perovskite B-SPL
related O
transmission O
bands O
. O


the O
SEM B-CMT
analysis O
shows O
an O
average O
grain B-PRO
size I-PRO
of O
<nUm> O
mm O
for O
all O
the O
solid B-DSC
solutions I-DSC
. O


rietveld B-CMT
refinement I-CMT
was O
performed O
on O
RT B-CMT
x-ray I-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
neutron B-CMT
diffraction I-CMT
( O
ND B-CMT
) O
, O
which O
reveals O
, O
the O
monoclinic B-SPL
phase O
for O
x O
= O
<nUm> O
with O
space O
group O
Cm B-SPL
and O
cubic B-SPL
phase O
for O
x O
= O
<nUm> O
with O
space O
group O
pm-3m B-SPL
. O


In O
other O
words O
, O
increasing O
x O
, O
the O
samples O
exhibit O
a O
gradual O
phase O
transition O
from O
monoclinic B-SPL
to O
cubic B-SPL
. O


In O
addition O
, O
the O
raman B-CMT
spectroscopy I-CMT
corroborates O
the O
change O
in O
structural B-PRO
symmetry I-PRO
from O
monoclinic B-SPL
( O
Cm B-SPL
) O
to O
cubic B-SPL
( O
pm-3m B-SPL
) O
on O
varying O
x O
. O


the O
coexistence O
of O
both O
monoclinic B-SPL
and O
cubic B-SPL
symmetries O
was O
observed O
between O
x O
= O
<nUm> O
– O
<nUm> O
. O


magnetic B-CMT
measurements I-CMT
shows O
that O
, O
the O
magnetic B-PRO
phase I-PRO
transition I-PRO
from O
paramagnetic B-PRO
to O
antiferromagnetic B-PRO
( O
AFM B-PRO
) O
was O
observed O
at O
or O
above O
RT O
for O
x O
= O
<nUm> O
and O
above O
. O


the O
magnetic B-PRO
structure I-PRO
was O
refined O
using O
the O
propagation B-PRO
vector I-PRO
k I-PRO
= O
( O
½ O
, O
½ O
, O
½ O
) O
and O
structure B-PRO
was O
found O
to O
be O
g B-PRO
- I-PRO
type I-PRO
antiferromagnetic I-PRO
. O


magnetic B-PRO
properties I-PRO
( O
M-H B-CMT
loops I-CMT
) O
shows O
, O
a O
weak O
ferromagnetic B-PRO
behaviour I-PRO
with O
antiferromagnetic B-PRO
ordering I-PRO
at O
RT O
. O


At O
RT O
, O
x O
= O
<nUm> O
– O
<nUm> O
the O
samples O
exhibits O
disordered B-PRO
paramagnetic I-PRO
property I-PRO
but O
weakly O
coupled O
with O
antiferromagnetic B-PRO
domains I-PRO
. O


but O
, O
x O
= O
<nUm> O
and O
<nUm> O
samples O
show O
antiferromagnetic B-PRO
and O
they O
are O
weakly O
coupled O
with O
paramagnetic B-PRO
domains I-PRO
. O


the O
temperature B-PRO
dependent I-PRO
magnetization I-PRO
( O
M(T) B-PRO
) O
confirms O
, O
the O
augmentation O
of O
neel B-PRO
temperature I-PRO
( O
TN B-PRO
) O
from O
<nUm> O
K O
to O
<nUm> O
K O
on O
increasing O
x. O
mossbauer B-CMT
spectroscopy I-CMT
confirms O
superparamagnetic B-PRO
nature O
with O
the O
presence O
of O
Fe B-MAT
in O
3+ O
state O
and O
on O
increasing O
x O
, O
the O
spectra O
changes O
from O
doublet O
to O
sextet O
. O


the O
ferroelectric B-PRO
( O
P-E B-PRO
) O
study O
confirms O
the O
existence O
of O
ferroelectric B-PRO
ordering I-PRO
with O
leaky B-PRO
behaviour I-PRO
. O


the O
reasonable O
ferroelectric B-PRO
loops I-PRO
with O
antiferromagnetic B-PRO
properties I-PRO
indicate O
samples O
with O
x O
= O
<nUm> O
– O
<nUm> O
show O
good O
magnetoelectric B-PRO
characteristics I-PRO
and O
may O
find O
applications O
in O
multiferroics B-APL
. O


spin B-PRO
glass I-PRO
behavior I-PRO
in O
the O
dy3 B-MAT
- I-MAT
x I-MAT
Y I-MAT
x I-MAT
O7Ta I-MAT
( I-MAT
<nUm> I-MAT
≤ I-MAT
x I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT
system O


several O
x-compositions O
of O
the O
polycrystalline B-DSC
Dy3-xYxTaO7 B-MAT
system O
, O
crystallizing O
in O
the O
weberite B-SPL
- O
type O
structure O
, O
were O
synthesized O
and O
structurally O
characterized O
using O
rietveld B-CMT
refinements I-CMT
based O
on O
x-ray B-CMT
diffraction I-CMT
data O
. O


In O
previous O
magnetic B-CMT
characterization I-CMT
of O
Dy3O7Ta B-MAT
( O
x O
= O
<nUm> O
) O
, O
with O
the O
same O
crystal B-PRO
structure I-PRO
, O
an O
antiferromagnetic B-PRO
transition I-PRO
at O
T O
= O
2.3K O
has O
been O
assigned O
to O
this O
compound O
. O


on O
the O
basis O
of O
DC B-CMT
and O
AC B-CMT
magnetic I-CMT
susceptibilities I-CMT
analyses I-CMT
, O
we O
show O
in O
this O
work O
that O
all O
compounds O
in O
the O
range O
of O
<nUm> O
≤ O
x O
≤ O
<nUm> O
exhibit O
a O
spin B-PRO
glass I-PRO
behavior I-PRO
. O


the O
nature O
of O
the O
spin B-PRO
glass I-PRO
behavior I-PRO
in O
Dy3-xYxTaO7 B-MAT
, O
can O
be O
attributed O
to O
the O
highly O
frustrated O
antiferromagnetic B-PRO
interaction O
of O
the O
dy3+ O
sublattice O
and O
to O
the O
dy3+ O
– O
dy3+ O
distorted O
tetrahedra O
array O
in O
the O
weberite B-SPL
- O
type O
structure O
of O
this O
system O
. O


by O
fitting O
AC B-CMT
susceptibility I-CMT
data O
, O
using O
dynamical B-CMT
scaling I-CMT
theory I-CMT
equations I-CMT
, O
we O
conclude O
that O
a O
cluster B-PRO
spin I-PRO
glass I-PRO
is O
present O
in O
Dy3-xYxTaO7 B-MAT
in O
the O
low O
temperature O
range O
. O


depending O
on O
the O
x-composition O
, O
tg B-PRO
~ O
<nUm> O
– O
<nUm> O
K O
. O


In O
the O
range O
<nUm> O
– O
300K O
the O
system O
obeys O
a O
curie B-PRO
– I-PRO
weiss I-PRO
magnetic I-PRO
behavior I-PRO
. O


superconductivity B-PRO
in O
CInNb2 B-MAT


In O
this O
work O
the O
CInNb2 B-MAT
phase O
is O
investigated O
by O
x-ray B-CMT
diffraction I-CMT
, O
heat B-PRO
capacity I-PRO
, O
magnetic B-PRO
and O
resistivity B-PRO
measurements O
. O


polycrystalline B-DSC
samples O
with O
CInNb2 B-MAT
nominal O
compositions B-PRO
were O
prepared O
by O
solid B-SMT
state I-SMT
reaction I-SMT
. O


x-ray B-CMT
powder I-CMT
patterns I-CMT
suggest O
that O
all O
peaks O
can O
be O
indexed O
with O
the O
hexagonal B-SPL
phase O
of O
AlCCr2 B-MAT
prototype O
. O


the O
electrical B-PRO
resistance I-PRO
as O
a O
function O
of O
temperature O
for O
CInNb2 B-MAT
shows O
superconducting B-PRO
behavior I-PRO
below O
7.5K O
. O


the O
M(H) B-PRO
data O
show O
typical O
type-II O
superconductivity B-PRO
with O
CH B-PRO
∼ O
<nUm> O
Oe O
at O
1.8K O
. O


the O
specific B-PRO
heat I-PRO
data O
are O
consistent O
with O
bulk B-DSC
superconductivity B-PRO
. O


the O
sommerfeld B-PRO
constant I-PRO
is O
estimated O
as O
γ B-PRO
∼ O
<nUm> O
mJmol-1K-1 O
. O


nano-sized B-DSC
indium B-MAT
- O
free O
MTO B-MAT
/ O
Ag B-MAT
/ O
MTO B-MAT
transparent B-APL
conducting I-APL
electrode I-APL
prepared O
by O
RF B-SMT
sputtering I-SMT
at O
room O
temperature O
for O
organic B-APL
photovoltaic I-APL
cells I-APL


As O
an O
alternative O
to O
indium B-MAT
– I-MAT
tin I-MAT
oxide I-MAT
( O
ITO B-MAT
) O
, O
MTO B-MAT
/ O
Ag B-MAT
/ O
MTO B-MAT
( O
MAM B-MAT
) O
multilayer B-APL
transparent I-APL
electrodes I-APL
with O
a O
nano-sized B-DSC
Ag B-MAT
thin B-DSC
film I-DSC
embedded O
between O
Mn B-MAT
- O
doped B-DSC
tin B-MAT
oxide I-MAT
( O
MTO B-MAT
) O
layers B-DSC
were O
prepared O
. O


the O
MTO B-MAT
/ O
Ag B-MAT
/ O
MTO B-MAT
thin B-DSC
films I-DSC
were O
deposited O
on O
a O
glass B-MAT
substrate B-DSC
by O
RF B-SMT
sputtering I-SMT
at O
room O
temperature O
to O
evaluate O
their O
characteristics O
as O
transparent B-APL
electrodes I-APL
for O
organic B-APL
photovoltaic I-APL
cells I-APL
( O
OPVs B-APL
) O
. O


optical B-PRO
and O
electrical B-PRO
properties I-PRO
of O
the O
single B-DSC
layer I-DSC
MTO B-MAT
were O
investigated O
at O
various O
working O
pressures O
and O
oxygen O
partial O
pressures O
. O


based O
on O
the O
optimal O
condition O
, O
the O
MTO B-MAT
/ O
Ag B-MAT
/ O
MTO B-MAT
multilayer B-APL
electrode I-APL
showed O
a O
sheet B-PRO
resistance I-PRO
of O
<nUm> O
– O
<nUm> O
Ω O
/ O
sq O
and O
transmittance B-PRO
of O
<nUm> O
– O
<nUm> O
% O
in O
the O
visible O
range O
( O
λ O
= O
<nUm> O
– O
<nUm> O
nm O
) O
. O


their O
values O
are O
compatible O
with O
commercial O
indium B-MAT
– I-MAT
tin I-MAT
oxide I-MAT
( O
ITO B-MAT
) O
. O


conventional O
- O
type O
bulk B-APL
hetero I-APL
- I-APL
junction I-APL
organic I-APL
photovoltaic I-APL
cells I-APL
( O
BHJ B-APL
- I-APL
OPVs I-APL
) O
using O
the O
MTO B-MAT
/ O
Ag B-MAT
/ O
MTO B-MAT
multilayer B-APL
electrode I-APL
show O
an O
open B-PRO
circuit I-PRO
voltage I-PRO
( O
VOC B-PRO
) O
of O
<nUm> O
V O
, O
a O
short B-PRO
circuit I-PRO
current I-PRO
( O
JSC B-PRO
) O
of O
<nUm> O
mA O
/ O
cm2 O
, O
a O
fill B-PRO
factor I-PRO
( O
FF B-PRO
) O
of O
<nUm> O
, O
and O
a O
power B-PRO
conversion I-PRO
efficiency I-PRO
( O
PCE B-PRO
) O
of O
<nUm> O
% O
. O


this O
PCE B-PRO
is O
comparable O
with O
a O
commercial O
ITO B-MAT
electrode B-APL
( O
<nUm> O
% O
) O
. O


this O
suggests O
that O
the O
MTO B-MAT
/ O
Ag B-MAT
/ O
MTO B-MAT
multilayer B-APL
electrode I-APL
is O
a O
new O
promising O
transparent B-APL
conducting I-APL
electrode I-APL
for O
BHJ B-APL
- I-APL
OPVs I-APL
. O


PdPt B-MAT
porous B-DSC
nanorods I-DSC
with O
enhanced O
electrocatalytic B-PRO
activity I-PRO
and O
durability B-PRO
for O
oxygen B-APL
reduction I-APL
reaction I-APL


through O
a O
bromide B-SMT
- I-SMT
induced I-SMT
galvanic I-SMT
replacement I-SMT
reaction I-SMT
between O
Pd B-MAT
nanowires B-DSC
and O
Cl6K2Pt B-DSC
, O
PdPt B-MAT
porous B-DSC
nanorods I-DSC
are O
successfully O
synthesized O
. O


with O
such O
interesting O
porous B-DSC
and O
alloy B-DSC
- I-DSC
structured I-DSC
PdPt B-MAT
nanorods B-DSC
as O
cathode B-APL
catalyst I-APL
for O
oxygen B-APL
reduction I-APL
reaction I-APL
( O
ORR B-APL
) O
, O
obvious O
advantages O
are O
shown O
evidently O
in O
the O
electrochemical B-CMT
studies I-CMT
. O


first O
, O
the O
porous B-DSC
structure O
shows O
large O
electrochemical B-PRO
surface I-PRO
area I-PRO
( O
ECSA B-PRO
) O
, O
thus O
providing O
an O
efficient O
way O
to O
reduce O
the O
usage O
of O
expensive O
noble O
metals O
. O


second O
, O
due O
to O
the O
large O
surface B-PRO
area I-PRO
and O
the O
synergistic O
effect O
of O
alloy B-DSC
crystalline I-DSC
phase O
, O
the O
resulting O
porous B-DSC
nanorods I-DSC
exhibit O
enhanced O
catalytic B-PRO
activity I-PRO
for O
ORR B-APL
compared O
to O
the O
Pd B-MAT
nanowires B-DSC
and O
commercial O
Pt B-MAT
/ O
C B-MAT
catalyst B-APL
. O


third O
, O
the O
PdPt B-MAT
porous B-DSC
nanorods I-DSC
exhibit O
excellent O
durability B-PRO
in O
ORR B-APL
with O
only O
<nUm> O
% O
loss O
of O
the O
initial O
ECSA B-PRO
after O
the O
accelerated O
durability B-CMT
tests I-CMT
( O
<nUm> O
potential O
cycles O
) O
, O
whereas O
the O
Pd B-MAT
nanowires B-DSC
and O
commercial O
Pt B-MAT
/ O
C B-MAT
catalyst B-APL
lose O
<nUm> O
% O
and O
<nUm> O
% O
of O
their O
original O
ECSA B-PRO
. O


such O
porous B-DSC
nanorods I-DSC
appear O
to O
be O
promising O
cathode B-APL
electrocatalysts I-APL
for O
fuel B-APL
cells I-APL
with O
enlarged O
surface O
area O
, O
enhanced O
catalytic B-PRO
activity I-PRO
and O
improved B-PRO
durability I-PRO
. O


high O
temperature O
raman B-CMT
studies O
of O
diamond B-MAT
thin B-DSC
films I-DSC


raman B-CMT
spectroscopy I-CMT
has O
become O
the O
definitive O
technique O
for O
assessing O
the O
quality O
of O
diamond B-MAT
thin B-DSC
films I-DSC
. O


not O
only O
can O
the O
diamond B-MAT
/ O
graphite B-MAT
contents O
be O
determined O
, O
but O
more O
detailed O
information O
, O
for O
example O
, O
about O
the O
domain B-PRO
size I-PRO
and O
the O
stress B-PRO
associated O
with O
a O
coating B-APL
can O
be O
gleaned O
. O


the O
results O
of O
a O
raman B-CMT
microprobe I-CMT
study O
of O
synthetic O
diamond B-MAT
coatings B-APL
on O
silicon B-MAT
and O
alumina B-MAT
substrates B-DSC
, O
at O
elevated O
temperatures O
( O
up O
to O
<nUm> O
° O
C O
) O
in O
controlled O
atmospheres O
of O
hydrogen O
, O
argon O
and O
oxygen O
are O
presented O
. O


the O
position O
of O
the O
raman B-CMT
band O
associated O
with O
crystalline B-DSC
diamond B-MAT
( O
<nUm> O
cm-1 O
) O
was O
monitored O
as O
a O
function O
of O
temperature O
. O


from O
the O
shift O
of O
the O
raman B-CMT
band O
from O
its O
natural O
position O
, O
an O
associated O
stress B-PRO
value O
can O
be O
obtained O
. O


microstructure B-PRO
of O
solid B-SMT
- I-SMT
HDDR I-SMT
NdFeB B-MAT
: I-MAT
Zr I-MAT
magnets B-APL


the O
microstructure B-PRO
of O
a O
B578Fe8099Nd1273Zr50 B-MAT
magnet B-APL
was O
determined O
by O
transmission B-CMT
electron I-CMT
microscopy I-CMT
before O
and O
after O
disproportionation B-SMT
by O
a O
solid B-SMT
- I-SMT
HDDR I-SMT
process O
. O


Zr B-MAT
eliminates O
free O
iron B-MAT
dendrites B-DSC
and O
results O
in O
platelet B-DSC
- O
like O
B2Zr B-MAT
precipitates B-DSC
in O
the O
intergranular O
region O
, O
inhibiting O
grain O
growth O
. O


the O
B2Zr B-MAT
platelets B-DSC
are O
not O
affected O
by O
the O
disproportionation B-SMT
. O


the O
role O
of O
Zr B-MAT
on O
the O
memorizing O
effect O
was O
studied O
. O


cubic B-SPL
nitrides B-MAT
of O
the O
sixth O
group O
of O
transition O
metals O
formed O
by O
nitrogen B-SMT
ion I-SMT
irradiation I-SMT
during O
metal O
condensation O


nitrogen O
- O
containing O
phases O
of O
chromium B-MAT
, O
molybdenum B-MAT
and O
tungsten B-MAT
were O
formed O
by O
evaporation B-SMT
of O
the O
metal B-PRO
under O
simultaneous O
nitrogen B-SMT
ion I-SMT
irradiation I-SMT
. O


with O
gradually O
increasing O
ion B-SMT
irradiation I-SMT
intensity O
, O
chromium B-MAT
forms O
initially O
Cr B-MAT
and O
Cr2N B-MAT
phase O
mixtures O
, O
then O
additionally O
CrN B-MAT
appears O
, O
and O
at O
the O
highest O
intensities O
pure O
CrN B-MAT
films B-DSC
are O
formed O
. O


molybdenum B-MAT
also O
forms O
pure O
nitride B-MAT
MoN I-MAT
under O
intense O
ion B-SMT
bombardment I-SMT
. O


however O
, O
in O
this O
case O
two O
different O
crystal B-PRO
structures I-PRO
are O
found O
, O
the O
stable B-PRO
hexagonal B-SPL
phase O
and O
the O
metastable B-PRO
cubic B-SPL
high O
- O
temperature O
phase O
. O


the O
latter O
is O
favoured O
under O
intense O
ion B-SMT
irradiation I-SMT
. O


In O
the O
case O
of O
tungsten B-MAT
, O
even O
at O
the O
highest O
intensities O
, O
only O
phase O
mixtures O
of O
W B-MAT
and O
NW2 B-MAT
were O
formed O
. O


these O
observed O
differences O
can O
be O
explained O
by O
the O
low O
reactivity B-PRO
of O
these O
metals B-PRO
towards O
nitrogen O
and O
the O
low O
chemical B-PRO
stability I-PRO
of O
the O
nitrides B-MAT
, O
particularly O
of O
WN B-MAT
. O


the O
metastable B-PRO
high I-PRO
- I-PRO
temperature I-PRO
structure I-PRO
of O
MoN B-MAT
is O
formed O
under O
the O
particular O
conditions O
of O
ion B-SMT
bombardment I-SMT
with O
rapid O
energy O
dissipation O
. O


optical B-CMT
and O
spectroscopic B-CMT
characterization I-CMT
of O
germanium B-MAT
selenide I-MAT
glass B-DSC
films I-DSC


A O
previews O
study O
of O
germanium B-MAT
selenide I-MAT
glass B-DSC
films I-DSC
by O
scanning B-CMT
electron I-CMT
microscopy I-CMT
and O
atomic B-CMT
force I-CMT
microscopy I-CMT
revealed O
a O
heterogeneous O
surface B-PRO
morphology I-PRO
consisting O
of O
granular O
regions O
∼ O
<nUm> O
– O
<nUm> O
nm O
in O
size O
, O
which O
cause O
high O
optical B-PRO
losses I-PRO
. O


the O
present O
work O
was O
performed O
in O
order O
to O
further O
characterize O
such O
materials O
using O
spectroscopic B-CMT
ellipsometry I-CMT
, O
infrared B-CMT
( O
IR B-CMT
) O
and O
raman B-CMT
spectroscopies I-CMT
. O


chalcogenide B-MAT
glass B-DSC
films I-DSC
with O
GeSe2 B-MAT
, O
Ge7Sb3Se15 B-MAT
and O
GeSe B-MAT
compositions B-PRO
have O
been O
deposited O
on O
single B-DSC
crystal I-DSC
silicon B-MAT
and O
silica B-MAT
glass B-DSC
substrates I-DSC
by O
vacuum B-SMT
thermal I-SMT
evaporation I-SMT
. O


the O
film B-DSC
thickness O
and O
the O
optical B-PRO
constants I-PRO
were O
obtained O
from O
spectroscopic B-CMT
ellipsometry I-CMT
using O
the O
tauc B-CMT
- I-CMT
lorenz I-CMT
dispersion I-CMT
formula I-CMT
. O


A O
model O
was O
derived O
for O
the O
film B-DSC
structure B-PRO
, O
which O
included O
a O
roughness B-PRO
layer I-PRO
at O
the O
surface B-DSC
. O


this O
top O
layer B-DSC
was O
found O
to O
have O
a O
thickness O
of O
∼ O
<nUm> O
– O
<nUm> O
nm O
, O
of O
the O
order O
of O
the O
size O
of O
the O
granular O
regions O
previously O
reported O
. O


the O
optical B-PRO
bandgap I-PRO
of O
the O
samples O
increased O
with O
increasing O
selenium B-MAT
content O
, O
while O
the O
refractive B-PRO
index I-PRO
decreased O
. O


despite O
a O
previous O
report O
of O
large O
scale O
phase O
separation O
in O
bulk B-DSC
Ge13Sb7Se30 B-MAT
glass B-DSC
, O
the O
fundamental O
IR B-CMT
and O
raman B-CMT
spectra O
obtained O
in O
the O
present O
work O
did O
not O
provide O
any O
clear O
evidence O
for O
such O
phase O
separation O
which O
could O
be O
associated O
with O
the O
heterogeneous O
nanostructure B-DSC
observed O
at O
the O
surface B-DSC
of O
the O
films B-DSC
. O


facile O
synthesis O
of O
interwoven B-DSC
Mn2O4Zn B-MAT
nanofibers B-DSC
by O
electrospinning B-SMT
and O
their O
performance O
in O
Li B-APL
- I-APL
ion I-APL
batteries I-APL


interwoven B-DSC
Mn2O4Zn B-MAT
nanofibers B-DSC
with O
porous B-DSC
nanostructures I-DSC
were O
successfully O
prepared O
by O
an O
electrospinning B-SMT
technique I-SMT
. O


the O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
results O
reveal O
that O
the O
obtained O
Mn2O4Zn B-MAT
nanofibers B-DSC
are O
<nUm> O
nm O
in O
diameter O
and O
several O
micrometers O
in O
length O
. O


the O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
analysis O
shows O
that O
the O
nanofibers B-DSC
possess O
highly O
crystalline B-PRO
structure I-PRO
without O
any O
impurity O
phase O
. O


when O
evaluated O
as O
an O
electrode B-APL
material O
for O
Li B-APL
- I-APL
ion I-APL
batteries I-APL
( O
LIBs B-APL
) O
, O
results O
of O
the O
electrochemical B-CMT
test I-CMT
show O
that O
these O
unique O
interwoven B-DSC
Mn2O4Zn B-MAT
nanofibers B-DSC
exhibit O
admirable O
lithium B-PRO
storage I-PRO
performances I-PRO
with O
high O
specific B-PRO
capacity I-PRO
and O
excellent O
rate B-PRO
capability I-PRO
. O


the O
interwoven B-DSC
and O
continuous O
one B-DSC
dimensional I-DSC
( O
1D B-DSC
) O
nanostructure B-DSC
of O
Mn2O4Zn B-MAT
nanofibers B-DSC
makes O
a O
prominent O
contribution O
to O
the O
excellent O
electrochemical B-PRO
performance I-PRO
. O


A O
simulation O
study O
on O
pseudomorphic B-APL
high I-APL
electron I-APL
mobility I-APL
transistors I-APL
( O
pHEMT B-APL
) O
fabricated O
using O
the O
GaInP B-MAT
/ O
AsGaIn B-MAT
material O
system O


the O
DC B-PRO
and O
RF B-PRO
characteristics I-PRO
of O
the O
<nUm> O
mm O
gate O
length O
Ga13In12P25 B-MAT
/ O
As5Ga4In B-MAT
/ O
Ga13In12P25 B-MAT
double B-APL
- I-APL
heterojunction I-APL
pseudomorphic I-APL
high I-APL
electron I-APL
mobility I-APL
transistor I-APL
( O
DH B-APL
- I-APL
pHEMT I-APL
) O
and O
<nUm> O
mm O
gate O
length O
single B-DSC
- I-DSC
heterojunction I-DSC
Ga13In12P25 B-MAT
/ O
As5Ga4In B-MAT
/ O
AsGa B-MAT
( O
SH B-APL
- I-APL
pHEMT I-APL
) O
were O
simulated O
using O
a O
two B-CMT
- I-CMT
dimensional I-CMT
device I-CMT
simulator I-CMT
, O
MEDICI B-CMT
[12] O
, O
with O
the O
incorporation O
of O
the O
GaxIn1-xAsyP1-y B-MAT
quaternary O
well O
formed O
between O
GaInP B-MAT
and O
AsGaIn B-MAT
layers B-DSC
. O


by O
including O
the O
interfacial B-DSC
layers I-DSC
between O
the O
GaInP B-MAT
- O
on O
- O
AsGaIn B-MAT
layers B-DSC
( O
and O
vice O
versa O
) O
, O
the O
simulator O
is O
able O
to O
model O
and O
give O
an O
insight O
into O
the O
transconductance B-PRO
behavior I-PRO
of O
these O
devices O
, O
namely O
the O
second B-PRO
transconductance I-PRO
peak I-PRO
of O
lower O
magnitude O
at O
negative O
gate O
biases O
observed O
for O
double B-DSC
heterojunctions I-DSC
and O
the O
high O
transconductance B-PRO
maintained O
at O
positive O
gate O
biases O
for O
the O
single B-APL
- I-APL
heterojunction I-APL
devices I-APL
. O


the O
simulation O
program O
was O
also O
used O
to O
predict O
the O
performance O
of O
a O
pHEMT B-APL
, O
which O
uses O
a O
strained O
barrier O
( O
Ga3In2P5 B-MAT
) O
to O
suppress O
the O
undesired O
effects O
of O
the O
interfacial B-DSC
quaternary I-DSC
layers I-DSC
formed O
at O
the O
heterojunctions B-DSC
. O


hall B-CMT
measurements I-CMT
revealed O
that O
higher O
electron B-PRO
mobility I-PRO
in O
the O
channel O
was O
obtained O
in O
this O
structure O
and O
simulations O
showed O
that O
high O
transconductance B-PRO
and O
good O
device B-PRO
behavior I-PRO
is O
obtainable O
despite O
lower O
electron B-PRO
concentrations I-PRO
. O


the O
fabricated O
device O
exhibited O
a O
peak O
transconductance B-PRO
, O
gm B-PRO
, O
of O
<nUm> O
mS O
/ O
mm O
, O
maximum O
drain B-PRO
current I-PRO
, O
IDSmax B-PRO
, O
of O
<nUm> O
mA O
/ O
mm O
and O
current B-PRO
gain I-PRO
cut I-PRO
- I-PRO
off I-PRO
frequency I-PRO
, O
fT B-PRO
, O
of O
<nUm> O
GHz O
. O


efficiency B-PRO
enhancement O
of O
solid O
- O
state O
PbS B-MAT
quantum B-APL
dot I-APL
- I-APL
sensitized I-APL
solar I-APL
cells I-APL
with O
Al2O3 B-MAT
barrier B-APL
layer I-APL


atomic B-SMT
layer I-SMT
deposition I-SMT
( O
ALD B-SMT
) O
was O
used O
to O
grow O
both O
PbS B-MAT
quantum B-DSC
dots I-DSC
and O
Al2O3 B-MAT
barrier B-APL
layers I-APL
in O
a O
solid B-APL
- I-APL
state I-APL
quantum I-APL
dot I-APL
- I-APL
sensitized I-APL
solar I-APL
cell I-APL
( O
QDSSC B-APL
) O
. O


barrier B-APL
layers I-APL
grown O
prior O
to O
quantum B-DSC
dots I-DSC
resulted O
in O
a O
near O
- O
doubling O
of O
device B-PRO
efficiency I-PRO
( O
<nUm> O
% O
to O
<nUm> O
% O
) O
whereas O
barrier B-APL
layers I-APL
grown O
after O
quantum B-DSC
dots I-DSC
did O
not O
improve O
efficiency B-PRO
, O
indicating O
the O
importance O
of O
quantum B-DSC
dots I-DSC
in O
recombination O
processes O
. O


growth O
and O
characterization O
of O
diamond B-MAT
film B-DSC
on O
aluminum B-MAT
nitride I-MAT


diamond B-MAT
films B-DSC
have O
been O
fabricated O
on O
aluminum B-MAT
nitride I-MAT
( O
AlN B-MAT
) O
ceramics B-DSC
by O
hot B-SMT
filament I-SMT
( O
HFCVD B-SMT
) O
method O
. O


high O
nucleation B-PRO
density I-PRO
of O
more O
than O
<nUm> O
/ O
cm2 O
can O
be O
obtained O
on O
AlN B-MAT
wafers B-DSC
by O
the O
pre-irradiation B-SMT
of O
high O
temperature O
filament O
in O
the O
hydrogen O
atmosphere O
. O


thermal B-PRO
properties I-PRO
of O
the O
composites B-DSC
were O
measured O
by O
using O
photothermal B-CMT
deflection I-CMT
techniques I-CMT
( O
PTD B-CMT
) O
. O


thermal B-PRO
diffusivity I-PRO
of O
diamond B-MAT
film B-DSC
/ O
AlN B-MAT
depends O
on O
the O
quality O
and O
thickness O
of O
coated B-SMT
diamond B-MAT
films B-DSC
. O


polymorphism B-PRO
and O
heavy B-PRO
- I-PRO
fermion I-PRO
behavior I-PRO
in O
Au2SnU B-MAT


Au2SnU B-MAT
has O
two O
polymorphic O
forms O
; O
a O
high O
- O
temperature O
cubic B-SPL
AlCu2Mn B-MAT
- O
type O
form O
and O
a O
hexagonal B-SPL
AlPt2Zr B-MAT
- O
type O
one O
below O
<nUm> O
° O
C O
. O


the O
cubic B-SPL
Au2SnU B-MAT
behaves O
like O
a O
nonmagnetic B-PRO
heavy I-PRO
- I-PRO
fermion I-PRO
system I-PRO
with O
C B-PRO
/ I-PRO
T I-PRO
= O
<nUm> O
mJ O
/ O
K2 O
mol O
at O
<nUm> O
K O
. O


by O
contrast O
, O
the O
hexagonal B-SPL
one O
orders O
antiferromagnetically B-PRO
at O
<nUm> O
K O
, O
leaving O
C B-PRO
/ I-PRO
T I-PRO
as O
large O
as O
<nUm> O
mJ O
/ O
K2 O
mol O
at O
<nUm> O
K O
. O


Co2LaO6Sr B-MAT
electrode B-APL
technology I-APL
for O
Pb(Zr,Ti)O3 B-MAT
thin B-APL
film I-APL
nonvolatile I-APL
memories I-APL


oxide B-MAT
electrode B-APL
technology I-APL
is O
investigated O
for O
optimization O
of O
Pb(Zr,Ti)O3 B-MAT
( O
PZT B-MAT
) O
thin B-DSC
film I-DSC
capacitor B-APL
properties O
for O
high B-APL
density I-APL
nonvolatile I-APL
memory I-APL
applications I-APL
. O


PZT B-MAT
thin B-DSC
film I-DSC
capacitors B-APL
with O
RF B-SMT
sputter I-SMT
deposited I-SMT
Co2LaO6Sr B-MAT
( O
LSCO B-MAT
) O
electrodes B-APL
have O
been O
characterized O
with O
respect O
to O
the O
following O
parameters O
: O
initial O
dielectric B-PRO
hysteresis I-PRO
loop I-PRO
characteristics I-PRO
, O
fatigue B-PRO
performance I-PRO
, O
microstructure B-PRO
and O
imprint B-PRO
behavior I-PRO
. O


our O
studies O
have O
determined O
that O
the O
fatigue B-PRO
of O
PZT B-MAT
capacitors B-APL
with O
LSCO B-MAT
electrodes B-APL
is O
less O
sensitive O
to O
B B-PRO
site I-PRO
cation I-PRO
ratio I-PRO
and O
underlying O
electrode B-APL
stack I-APL
technology I-APL
than O
with O
O2Ru B-MAT
electrodes B-APL
. O


doping O
PZT B-MAT
thin B-DSC
films I-DSC
with O
Nb B-MAT
( O
PNZT B-MAT
) O
improves O
imprint B-PRO
behavior I-PRO
of O
LSCO B-MAT
/ O
/ O
PZT B-MAT
/ O
/ O
LSCO B-MAT
capacitors B-APL
considerably O
. O


we O
have O
demonstrated O
that O
PNZT B-MAT
<nUm> O
/ O
<nUm> O
/ O
<nUm> O
/ O
/ O
LSCO B-MAT
capacitors B-APL
thermally B-SMT
processed I-SMT
at O
either O
<nUm> O
° O
C O
or O
<nUm> O
° O
C O
have O
almost O
identical O
initial O
hysteresis B-PRO
properties I-PRO
and O
exhibit O
essentially O
no O
fatigue O
out O
to O
approximately O
<nUm> O
cycles O
. O


deposition O
and O
characterization O
of O
1D B-DSC
O2Ru B-MAT
nanocrystals B-DSC
by O
reactive B-SMT
sputtering I-SMT


well O
- O
aligned O
1D B-DSC
O2Ru B-MAT
nanocrystals B-DSC
( O
CsN B-DSC
) O
have O
been O
grown O
on O
sapphire B-MAT
(SA)(100) I-MAT
, O
SA(001) B-MAT
and O
LiNbO3 B-MAT
(LNO)(100) I-MAT
substrates B-DSC
via O
reactive B-SMT
magnetron I-SMT
sputtering I-SMT
using O
a O
Ru B-MAT
metal B-PRO
target O
. O


the O
surface B-PRO
morphology I-PRO
, O
structural B-PRO
and O
spectroscopic B-PRO
properties I-PRO
of O
the O
as-deposited B-DSC
CsN I-DSC
are O
characterized O
using O
field B-CMT
- I-CMT
emission I-CMT
scanning I-CMT
electron I-CMT
microscopy I-CMT
( O
FESEM B-CMT
) O
, O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
, O
and O
micro-Raman B-CMT
spectroscopy I-CMT
( O
RS B-CMT
) O
. O


FESEM B-CMT
micrographs O
show O
that O
CsN B-DSC
grown O
on O
SA(100) B-MAT
/ O
LNO(100) B-MAT
are O
vertically O
aligned O
, O
while O
CsN B-DSC
grown O
on O
SA(001) B-MAT
show O
in-plane O
alignment O
with O
mosaic B-PRO
structure I-PRO
. O


the O
XRD B-CMT
results O
indicate O
that O
the O
CsN B-DSC
are O
( O
<nUm> O
) O
and O
( O
<nUm> O
) O
oriented O
on O
SA(100) B-MAT
/ O
LNO(100) B-MAT
and O
SA(001) B-MAT
substrates B-DSC
, O
respectively O
. O


A O
strong O
substrate B-DSC
effect O
on O
the O
alignment O
of O
the O
O2Ru B-MAT
CsN B-DSC
deposition O
has O
been O
observed O
and O
the O
probable O
mechanism O
for O
the O
formation O
of O
these O
CsN B-DSC
has O
been O
discussed O
. O


the O
usefulness O
of O
the O
raman B-CMT
spectroscopy I-CMT
as O
a O
structural B-CMT
characterization I-CMT
technique O
of O
CsN B-DSC
has O
been O
demonstrated O
. O


photoelectrochemical B-PRO
behavior I-PRO
of O
thermally B-SMT
activated I-SMT
natural O
pyrite B-MAT
- O
based O
photoelectrodes B-APL


natural O
pyrite B-MAT
- O
based O
photoelectrodes B-APL
have O
been O
manufactured O
by O
the O
screen B-SMT
printing I-SMT
technique I-SMT
. O


solid O
state O
investigation O
of O
the O
starting O
material O
, O
as O
well O
as O
of O
the O
thermally B-SMT
activated I-SMT
powders B-DSC
, O
has O
been O
carried O
out O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
energy B-CMT
- I-CMT
dispersive I-CMT
x-ray I-CMT
analysis I-CMT
( O
EDX B-CMT
) O
. O


information O
on O
the O
electrochemical B-PRO
reactivity I-PRO
of O
the O
surface B-DSC
has O
been O
obtained O
by O
cyclic B-CMT
voltammetry I-CMT
in O
alkaline O
solution O
. O


the O
air B-SMT
- I-SMT
treated I-SMT
electrodes B-APL
have O
been O
shown O
to O
be O
photoactive B-PRO
when O
tested O
as O
photoanodes B-APL
in O
polyiodide O
— O
containing O
photoelectrochemical B-APL
cells I-APL
. O


the O
maximum O
obtained O
efficiency B-PRO
for O
solar B-APL
energy I-APL
conversion I-APL
was O
<nUm> O
% O
. O


formation O
of O
a O
heterostructure B-DSC
composed O
of O
FeS2 B-MAT
and O
Fe2O3 B-MAT
phases O
is O
considered O
to O
be O
a O
promising O
way O
for O
the O
development O
of O
low B-APL
- I-APL
cost I-APL
devices I-APL
in O
the O
direct B-APL
conversion I-APL
of I-APL
solar I-APL
energy I-APL
. O


multiferroic B-PRO
properties I-PRO
of O
the O
layered B-DSC
perovskite B-SPL
- O
related O
oxide B-MAT
Fe99La300O1000Ti201 I-MAT


the O
magnetic B-PRO
and O
electrical B-PRO
properties I-PRO
of O
the O
layered B-DSC
perovskite B-SPL
- O
related O
oxide B-MAT
, O
Fe99La300O1000Ti201 B-MAT
, O
are O
investigated O
. O


the O
material O
possesses O
the O
structure O
of O
six O
ABO3 B-MAT
layers B-DSC
with O
iron B-MAT
ions O
concentrated O
towards O
the O
center O
of O
the O
slabs B-DSC
. O


the O
valence B-PRO
state I-PRO
of O
La B-MAT
, O
Ti B-MAT
and O
Fe B-MAT
ions O
was O
determined O
using O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
. O


the O
“ B-PRO
glassy I-PRO
” I-PRO
magnetic I-PRO
behavior I-PRO
of O
Fe99La300O1000Ti201 B-MAT
can O
be O
understood O
by O
the O
coexistence O
and O
competition O
between O
two O
different O
types O
of O
interaction O
, O
which O
originate O
from O
both O
the O
antiferromagnetic B-PRO
interactions I-PRO
between O
fe3+ O
– O
O O
– O
fe3+ O
in O
the O
central O
layers B-DSC
of O
the O
slabs B-DSC
and O
ferromagnetic B-PRO
coupling I-PRO
that O
is O
induced O
by O
the O
oxygen B-PRO
vacancies I-PRO
from O
the O
titanium B-MAT
ion O
enrichment O
zone O
at O
the O
borders O
, O
owing O
to O
the O
nonrandom O
distribution O
of O
magnetic B-PRO
fe3+ O
ions O
. O


the O
observed O
ferromagnetism B-PRO
can O
be O
ascribed O
to O
the O
ferromagnetic B-PRO
coupling I-PRO
and O
spin B-PRO
canting I-PRO
of O
the O
antiferromagnetic B-PRO
coupling I-PRO
via O
the O
dzyaloshinskii B-PRO
– I-PRO
moriya I-PRO
interaction I-PRO
. O


the O
frequency O
- O
dependent O
behavior O
of O
the O
dielectric B-PRO
loss I-PRO
peak O
in O
Fe99La300O1000Ti201 B-MAT
manifests O
itself O
as O
a O
thermally O
activated O
relaxation O
process O
. O


the O
P B-CMT
– I-CMT
e I-CMT
hysteresis I-CMT
loops I-CMT
and O
local O
piezoresponse B-CMT
loops I-CMT
confirm O
the O
ferroelectric B-PRO
behavior I-PRO
of O
Fe99La300O1000Ti201 B-MAT
. O


microstructural B-PRO
evolution O
during O
the O
hot B-SMT
- I-SMT
pressing I-SMT
of O
H2Ti B-MAT
– O
CTi B-MAT
particle B-DSC
mixtures O


microstructural B-PRO
evolution O
during O
the O
hot B-SMT
- I-SMT
pressing I-SMT
of O
H2Ti B-MAT
and O
CTi B-MAT
powder B-DSC
mixtures O
was O
investigated O
. O


it O
was O
observed O
that O
H2Ti B-MAT
was O
completely O
transformed O
to O
Ti B-MAT
and O
that O
carbon B-MAT
atoms O
diffused O
from O
CTi B-MAT
particles B-DSC
into O
the O
matrix O
during O
the O
process O
. O


it O
is O
suggested O
that O
this O
was O
responsible O
for O
the O
formation O
of O
a-Ti B-MAT
in O
the O
matrix O
in O
preference O
to O
the O
a'-Ti B-MAT
. O


structure B-PRO
and O
electrical B-PRO
characteristics I-PRO
of O
epitaxial O
palladium B-MAT
silicide I-MAT
contacts B-APL
on O
single B-DSC
crystal I-DSC
silicon B-MAT
and O
diffused O
P-N B-PRO
diodes B-APL


Pd2Si B-MAT
contacts B-APL
to O
single B-DSC
crystal I-DSC
silicon B-MAT
have O
been O
made O
by O
depositing O
Pd B-MAT
at O
room O
temperature O
and O
annealing B-SMT
at O
a O
succession O
of O
elevated O
temperatures O
. O


the O
silicide B-MAT
initially O
formed O
is O
a O
single B-DSC
crystal I-DSC
, O
even O
at O
room O
temperature O
. O


its O
crystal B-PRO
structure I-PRO
is O
uniquely O
related O
to O
that O
of O
the O
underlying O
silicon B-MAT
with O
the O
basal O
plane O
of O
Pd2Si B-MAT
making O
an O
excellent O
match O
, O
with O
respect O
to O
silicon B-MAT
atom O
positions O
, O
with O
the O
( O
<nUm> O
) O
plane O
of O
silicon B-MAT
. O


understanding O
this O
epitaxy O
leads O
to O
an O
appreciation O
of O
the O
excellent O
electrical B-PRO
characteristics I-PRO
of O
these O
contacts B-APL
which O
are O
shown O
to O
be O
superior O
to O
alloyed B-DSC
aluminum B-MAT
. O


for O
comparison O
, O
barrier B-CMT
height I-CMT
measurements I-CMT
reproduce O
earlier O
results O
of O
kircher O
on O
Pd2Si B-MAT
formed O
during O
a O
high O
temperature O
( O
<nUm> O
° O
C O
) O
deposition O
of O
Pd B-MAT
. O


microstructure B-PRO
and O
mechanical B-PRO
properties I-PRO
of O
novel O
B2Zr B-MAT
- O
reinforced B-DSC
zirconium B-MAT
alloys B-DSC


novel O
B2Zr B-MAT
- O
reinforced B-DSC
zirconium B-MAT
( O
Zr B-MAT
) O
alloys B-DSC
with O
different O
boron B-MAT
( O
B B-MAT
) O
and O
aluminum B-MAT
( O
Al B-MAT
) O
contents O
were O
produced O
by O
arc B-SMT
- I-SMT
melting I-SMT
technique O
. O


microstructural B-PRO
observation O
indicated O
that O
both O
the O
a-lath B-PRO
and O
the O
prior-b B-PRO
grain I-PRO
size I-PRO
were O
significantly O
refined O
with O
increased O
B B-MAT
content O
. O


the O
thickness O
of O
α B-PRO
lath I-PRO
gradually O
increased O
with O
increased O
solute O
atom O
Al B-MAT
content O
. O


compressive B-CMT
test I-CMT
results O
showed O
that O
the O
modulus B-PRO
and O
strengths B-PRO
of O
the O
alloys B-DSC
improved O
with O
increased O
B2Zr B-MAT
and O
Al B-MAT
contents O
. O


the O
presence O
of O
abundant O
B2Zr B-MAT
whiskers B-DSC
and O
solid B-DSC
solution I-DSC
atom O
Al B-MAT
were O
responsible O
for O
the O
increased O
young's B-PRO
modulus I-PRO
. O


the O
strengthening B-PRO
mechanisms I-PRO
can O
be O
attributed O
to O
strengthening B-SMT
through O
load O
transfer O
between O
the O
B2Zr B-MAT
whiskers B-DSC
and O
Zr B-MAT
matrix O
, O
morphological B-PRO
changes O
in O
alloys B-DSC
resulting O
from O
the O
formation O
of O
B2Zr B-MAT
whiskers B-DSC
, O
and O
solid B-SMT
- I-SMT
solution I-SMT
strengthening I-SMT
caused O
by O
Al B-MAT
addition O
. O


fractography B-CMT
confirmed O
that O
B2Zr B-MAT
whiskers B-DSC
undertook O
the O
load O
transferred O
from O
Zr B-MAT
matrix O
and O
that O
crack O
sources O
were O
primarily O
generated O
at O
B2Zr B-MAT
whiskers B-DSC
. O


dopant O
redistribution O
during O
the O
formation O
of O
iron B-MAT
silicides I-MAT


iron B-MAT
disilicide I-MAT
( O
b-FeSi2 B-MAT
) O
is O
a O
semiconducting B-PRO
silicide B-MAT
with O
a O
direct O
bandgap B-PRO
of O
about O
<nUm> O
eV O
, O
thus O
rendering O
it O
attractive O
properties O
for O
opto B-APL
- I-APL
electronic I-APL
applications I-APL
. O


the O
compatibility O
with O
standard O
IC B-APL
- I-APL
technology I-APL
is O
of O
great O
importance O
for O
future O
on B-APL
- I-APL
chip I-APL
optical I-APL
interconnects I-APL
. O


this O
study O
is O
focused O
on O
the O
dopant B-PRO
behaviour I-PRO
during O
processing O
of O
iron B-MAT
silicides I-MAT
. O


the O
redistribution O
of O
dopants O
during O
silicide B-MAT
formation O
was O
studied O
utilising O
SIMS B-CMT
analysis I-CMT
. O


different O
silicide B-MAT
procedures O
were O
investigated O
. O


the O
silicides B-MAT
were O
either O
formed O
by O
reacting O
a O
deposited O
iron B-MAT
film B-DSC
with O
crystalline B-DSC
silicon B-MAT
or O
from O
a O
bilayer B-DSC
structure O
consisting O
of O
excess O
silicon B-MAT
on O
top O
of O
the O
iron B-MAT
film B-DSC
. O


cross-sectional B-CMT
TEM I-CMT
micrographs O
of O
the O
bilayer B-DSC
structures O
showed O
an O
epitaxial O
regrowth O
of O
the O
excess O
silicon B-MAT
at O
the O
crystalline B-DSC
silicon B-MAT
- O
silicide B-MAT
interface B-DSC
when O
the O
system O
was O
fully O
reacted O
. O


arsenic B-MAT
implanted B-SMT
silicon B-MAT
was O
observed O
to O
yield O
good O
epitaxial O
regrowth O
while O
boron B-MAT
showed O
an O
inferior O
crystalline B-DSC
regrowth O
. O


the O
dopant B-PRO
redistribution I-PRO
was O
found O
to O
depend O
on O
the O
formation O
condition O
. O


boron B-MAT
and O
phosphorus B-MAT
were O
depleted O
at O
the O
silicide B-MAT
- O
silicon B-MAT
interface B-DSC
, O
while O
arsenic B-MAT
was O
found O
to O
yield O
a O
small O
accumulation O
at O
the O
interface B-DSC
. O


structural B-PRO
and O
luminescence B-CMT
characterization I-CMT
of O
porous B-DSC
anodic B-PRO
oxide B-MAT
films B-DSC
on O
aluminum B-MAT
formed O
in O
sulfamic O
acid O
solution O


atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
and O
luminescence B-CMT
methods I-CMT
( O
galvanoluminescence B-CMT
and O
photoluminescence B-CMT
) O
were O
used O
to O
characterize O
porous B-DSC
oxide B-MAT
films B-DSC
obtained O
by O
aluminum B-DSC
anodization B-SMT
in O
sulfamic O
acid O
solution O
. O


for O
the O
first O
time O
we O
measured O
weak O
galvanoluminescence B-PRO
during O
aluminum B-MAT
anodization B-SMT
in O
sulfamic O
acid O
and O
found O
strong O
influence O
of O
sample O
's O
surface B-DSC
pretreatment O
as O
well O
as O
anodic O
conditions O
on O
luminescence B-PRO
intensity I-PRO
. O


AFM B-CMT
analysis O
showed O
that O
the O
pore O
arrangement O
of O
porous B-DSC
oxide B-MAT
films B-DSC
formed O
in O
sulfamic O
acid O
by O
two B-SMT
- I-SMT
step I-SMT
anodization I-SMT
process O
at O
a O
constant O
voltage O
of O
<nUm> O
– O
30V O
is O
relatively O
irregular O
. O


x-ray B-CMT
absorption I-CMT
spectra O
and O
conduction B-PRO
band I-PRO
structure I-PRO
of O
In2S3 B-MAT


x-ray B-CMT
absorption I-CMT
spectra O
of O
the O
spinel B-SPL
In2S3 B-MAT
were O
recorded O
at O
the O
sulphur O
K O
and O
indium B-MAT
L1 B-PRO
and O
L3 B-PRO
absorption I-PRO
edges I-PRO
, O
scanning O
the O
unoccupied B-PRO
electronic I-PRO
states I-PRO
of O
S B-MAT
p O
, O
In B-MAT
p O
, O
and O
In B-MAT
( O
s,d O
) O
symmetry O
, O
respectively O
. O


alignment O
of O
all O
spectra O
on O
a O
common O
scale O
and O
comparison O
with O
calculated O
densities B-PRO
of I-PRO
states I-PRO
allowed O
an O
interpretation O
of O
all O
observed O
features O
in O
terms O
of O
final O
state O
character O
, O
chemical B-PRO
bonding I-PRO
and O
local B-PRO
symmetry I-PRO
. O


A O
picture O
of O
the O
conduction B-PRO
band I-PRO
structure I-PRO
is O
established O
. O


A O
model O
of O
density B-PRO
of I-PRO
states I-PRO
in O
amorphous B-DSC
Si B-MAT
, O
C B-MAT
and O
CSi B-MAT
from O
time B-CMT
- I-CMT
of I-CMT
- I-CMT
flight I-CMT
measurement I-CMT


the O
temperature O
dependence O
of O
the O
electron B-PRO
drift I-PRO
mobility I-PRO
in O
glow B-SMT
- I-SMT
discharged I-SMT
undoped B-DSC
hydrogenated B-SMT
amorphous B-DSC
silicon B-MAT
, O
carbon B-MAT
and O
silicon B-MAT
carbide I-MAT
films B-DSC
with O
stoichiometric B-DSC
compositional O
( O
a-Si0.5C0.5 B-MAT
: I-MAT
H I-MAT
) O
has O
been O
measured O
by O
the O
time B-CMT
- I-CMT
of I-CMT
- I-CMT
flight I-CMT
method I-CMT
. O


all O
films B-DSC
displayed O
the O
same O
behaviour O
of O
the O
transient B-PRO
current I-PRO
and O
dispersion B-PRO
parameters I-PRO
, O
which O
can O
be O
explained O
by O
assuming O
a O
gaussian O
distribution O
of O
tail B-PRO
states I-PRO
near O
the O
conduction B-PRO
band I-PRO
. O


the O
results O
obtained O
results O
corroborated O
the O
common O
nature O
and O
degree O
of O
disorder O
of O
the O
conduction B-PRO
band I-PRO
tail I-PRO
in O
all O
four O
- O
coordinated O
amorphous B-DSC
semiconductors B-PRO
. O


electronic B-PRO
structure I-PRO
and O
optical B-PRO
properties I-PRO
of O
bismuth B-MAT
chalcogenides I-MAT
Bi2Q3 I-MAT
( I-MAT
q I-MAT
= I-MAT
O I-MAT
, I-MAT
S I-MAT
, I-MAT
Se I-MAT
, I-MAT
Te I-MAT
) I-MAT
by O
first B-CMT
- I-CMT
principles I-CMT
calculations I-CMT


bismuth B-MAT
chalcogenides I-MAT
, O
including O
: O
Bi2O3 B-MAT
, O
Bi2S3 B-MAT
, O
Bi2Se3 B-MAT
, O
and O
Bi2Te3 B-MAT
, O
are O
important O
photoelectric B-APL
functional I-APL
materials I-APL
, O
and O
have O
a O
wide O
range O
of O
applications O
. O


In O
this O
article O
, O
first B-CMT
- I-CMT
principles I-CMT
calculations I-CMT
were O
performed O
to O
investigate O
the O
crystal B-PRO
structure I-PRO
, O
electronic B-PRO
properties I-PRO
, O
and O
optical B-PRO
properties I-PRO
of O
these O
compounds O
. O


the O
relationship O
between O
crystal B-PRO
micro-structure I-PRO
, O
electronic B-PRO
structure I-PRO
, O
and O
optical B-PRO
properties I-PRO
has O
been O
systematically O
investigated O
. O


on O
one O
hand O
, O
from O
Bi2O3 B-MAT
to O
Bi2Te3 B-MAT
, O
with O
the O
increasing O
atomic B-PRO
number I-PRO
of O
the O
group O
VI O
elements O
, O
the O
electronic B-PRO
structures I-PRO
and O
optical B-PRO
properties I-PRO
exhibit O
obvious O
similarities O
and O
tendencies O
. O


the O
bonding O
varies O
within O
the O
series O
from O
strongly O
ionic O
in O
the O
oxide B-MAT
of O
Bi2O3 B-MAT
, O
to O
iono-covalent O
in O
the O
sulfide O
of O
Bi2S3 B-MAT
and O
selenide B-MAT
of O
Bi2Se3 B-MAT
, O
to O
weak O
covalent O
and O
van O
der O
waals O
in O
the O
teliuride O
of O
Bi2Te3 B-MAT
. O


owing O
to O
the O
difference O
between O
chain B-DSC
- I-DSC
like I-DSC
structure B-PRO
and O
layered B-DSC
structure B-PRO
, O
the O
gain O
of O
electrons O
of O
Se B-MAT
atoms O
in O
Bi2Se3 B-MAT
with O
orthorhombic B-SPL
structure O
is O
more O
than O
that O
of O
in O
Bi2Se3 B-MAT
with O
trigonal B-SPL
structure O
. O


based O
on O
the O
calculated O
results O
, O
it O
is O
found O
that O
the O
optical B-PRO
properties I-PRO
are O
determined O
by O
the O
components O
of O
the O
bismuth B-MAT
chalcogenide I-MAT
compounds O
as O
well O
as O
the O
micro-structure B-PRO
of O
the O
bismuth B-MAT
chalcogenide I-MAT
compounds O
. O


these O
calculated O
results O
can O
provide O
reliable O
data O
and O
support O
for O
the O
development O
of O
new O
bismuth B-MAT
- O
based O
optoelectronic B-APL
materials I-APL
and O
devices B-APL
. O


microstructure B-PRO
of O
high O
temperature O
Ti B-MAT
- O
based O
brazing B-APL
alloys B-DSC
and O
wettability B-PRO
on O
CSi B-MAT
ceramic B-DSC


Ti B-MAT
- O
based O
brazing B-APL
alloys B-DSC
were O
prepared O
by O
the O
non-consumable B-SMT
arc I-SMT
- I-SMT
melting I-SMT
technology I-SMT
. O


the O
wettability B-PRO
behavior I-PRO
of O
the O
brazing B-APL
alloys B-DSC
on O
silicon B-MAT
carbide I-MAT
( O
CSi B-MAT
) O
was O
investigated O
by O
means O
of O
sessile B-CMT
drop I-CMT
method I-CMT
in O
vacuum O
at O
<nUm> O
° O
C O
for O
<nUm> O
min O
. O


the O
brazing B-APL
alloys B-DSC
of O
91.5Ti B-MAT
– I-MAT
8.5Si I-MAT
( I-MAT
wt. I-MAT
% I-MAT
) I-MAT
, O
87.1Ti B-MAT
– I-MAT
8.1Si I-MAT
– I-MAT
4.8Cu I-MAT
( I-MAT
wt. I-MAT
% I-MAT
) I-MAT
and O
83.2Ti B-MAT
– I-MAT
7.7Si I-MAT
– I-MAT
9.1Cu I-MAT
( I-MAT
wt. I-MAT
% I-MAT
) I-MAT
exhibit O
good O
wettability B-PRO
on O
CSi B-MAT
plate B-DSC
, O
but O
bad O
cohesion B-PRO
with O
CSi B-MAT
after O
cooling B-SMT
. O


however O
, O
the O
brazing B-APL
alloys B-DSC
of O
22Ti B-MAT
– I-MAT
78Si I-MAT
( I-MAT
wt. I-MAT
% I-MAT
) I-MAT
and O
21Ti B-MAT
– I-MAT
74.2Si I-MAT
– I-MAT
4.8Cu I-MAT
( I-MAT
wt. I-MAT
% I-MAT
) I-MAT
exhibit O
both O
good O
wettability B-PRO
and O
cohesion B-PRO
with O
CSi B-MAT
after O
cooling B-SMT
. O


microstructure B-PRO
, O
phase B-PRO
composition I-PRO
of O
the O
brazing B-APL
alloys B-DSC
and O
the O
interface B-DSC
between O
the O
brazing B-APL
alloys B-DSC
and O
CSi B-MAT
were O
investigated O
by O
using O
SEM B-CMT
coupled O
with O
EDS B-CMT
and O
XRD B-CMT
, O
respectively O
. O


an O
in O
situ O
transmission B-CMT
electron I-CMT
microscope I-CMT
study O
of O
the O
thermal B-PRO
stability I-PRO
of O
near B-PRO
- I-PRO
surface I-PRO
microstructures I-PRO
induced O
by O
deep B-SMT
rolling I-SMT
and O
laser B-SMT
- I-SMT
shock I-SMT
peening I-SMT


we O
investigate O
the O
thermal B-PRO
stability I-PRO
of O
near B-PRO
- I-PRO
surface I-PRO
microstructures I-PRO
induced O
by O
deep B-SMT
rolling I-SMT
and O
laser B-SMT
- I-SMT
shock I-SMT
peening I-SMT
in O
AISI B-MAT
<nUm> I-MAT
stainless I-MAT
steel I-MAT
( O
AISI B-MAT
<nUm> I-MAT
) O
and O
Ti B-MAT
– I-MAT
6Al I-MAT
– I-MAT
4V I-MAT
using O
in O
situ O
transmission B-CMT
electron I-CMT
microscopy I-CMT
. O


the O
improvements O
in O
fatigue B-PRO
resistance I-PRO
at O
elevated O
temperature O
are O
related O
to O
the O
high B-PRO
- I-PRO
temperature I-PRO
stability I-PRO
of O
the O
work B-SMT
- I-SMT
hardened I-SMT
near B-PRO
- I-PRO
surface I-PRO
microstructure I-PRO
. O


selective O
synthesis O
and O
photoelectric B-PRO
properties I-PRO
of O
Cu3S4Sb B-MAT
and O
CuS2Sb B-MAT
nanocrystals B-DSC


A O
novel O
solvothermal B-CMT
chemical I-CMT
route I-CMT
has O
been O
developed O
to O
synthesize O
Cu B-MAT
– I-MAT
Sb I-MAT
– I-MAT
S I-MAT
compound O
nanocrystals B-DSC
in O
a O
controllable O
manner O
. O


Cu3S4Sb B-MAT
and O
CuS2Sb B-MAT
nanocrystals B-DSC
can O
be O
selectively O
prepared O
by O
modifying O
the O
reaction O
temperature O
. O


the O
temperature O
dependent O
release O
of O
antimony B-MAT
from O
potassium O
antimonyl O
tartrate O
trihydrate O
faciliated O
the O
selective O
synthesis O
of O
Cu3S4Sb B-MAT
and O
CuS2Sb B-MAT
. O


the O
bandgap B-PRO
is O
<nUm> O
eV O
for O
Cu3S4Sb B-MAT
nanocrystals B-DSC
and O
<nUm> O
eV O
for O
CuS2Sb B-MAT
nanocrystals B-DSC
. O


semiconductors B-PRO
of O
Cu B-MAT
– I-MAT
Sb I-MAT
– I-MAT
S I-MAT
compounds O
with O
such O
band B-PRO
gaps I-PRO
are O
desirable O
for O
solar B-APL
cell I-APL
applications I-APL
. O


the O
Cu3S4Sb B-MAT
and O
CuS2Sb B-MAT
nanocrystals B-DSC
both O
showed O
obvious O
photo B-PRO
- I-PRO
electric I-PRO
response I-PRO
, O
indicating O
their O
potential O
application O
as O
an O
active B-APL
layer I-APL
in O
thin B-APL
- I-APL
film I-APL
solar I-APL
cells I-APL
. O


A O
comparison O
of O
the O
effect O
of O
radiation B-SMT
on O
the O
thermal B-PRO
conductivity I-PRO
of O
sapphire B-MAT
at O
low O
and O
high O
temperatures O


the O
effects O
of O
radiation B-SMT
on O
the O
thermal B-PRO
conductivity I-PRO
of O
sapphire B-MAT
have O
been O
calculated O
over O
a O
wide O
temperature O
range O
( O
<nUm> O
– O
<nUm> O
K O
) O
. O


the O
phonon B-PRO
scattering I-PRO
relaxation I-PRO
times I-PRO
for O
various O
scattering O
mechanisms O
have O
been O
analyzed O
in O
order O
to O
determine O
the O
effect O
each O
mechanism O
has O
on O
the O
lattice B-PRO
thermal I-PRO
conductivity I-PRO
of O
sapphire B-MAT
. O


the O
methods O
of O
calculation O
at O
low O
and O
high O
temperature O
are O
reviewed O
, O
and O
the O
results O
of O
these O
calculations O
are O
presented O
to O
compare O
the O
effect O
at O
different O
temperatures O
. O


it O
is O
found O
that O
vacancy B-PRO
scattering I-PRO
can O
significantly O
reduce O
the O
thermal B-PRO
conductivity I-PRO
over O
a O
wide O
temperature O
range O
; O
for O
example O
, O
a O
vacancy B-PRO
concentration I-PRO
of O
<nUm> O
per O
atom O
leads O
to O
a O
fractional O
change O
of O
about O
<nUm> O
% O
at O
<nUm> O
K O
versus O
<nUm> O
% O
at O
<nUm> O
K O
. O


this O
reduction O
has O
significance O
for O
the O
design O
and O
placement O
of O
radio B-APL
frequency I-APL
and I-APL
microwave I-APL
windows I-APL
in O
fusion B-APL
reactors I-APL
. O


observation O
of O
diamagnetic B-PRO
precursor O
to O
the O
meissner B-PRO
state I-PRO
above O
T B-PRO
c I-PRO
in O
high-T B-PRO
c I-PRO
la2-x B-MAT
Sr I-MAT
x I-MAT
CuO4 I-MAT
cuprates I-MAT
by O
scanning B-CMT
SQUID I-CMT
microscopy I-CMT


we O
have O
studied O
the O
magnetic B-CMT
imaging I-CMT
of O
the O
superconducting B-PRO
and O
anomalous O
normal O
states O
for O
underdoped B-DSC
La2-xSrxCuO4 B-MAT
( O
LSCO B-MAT
) O
thin B-DSC
films I-DSC
deposited O
by O
a O
PLD B-SMT
method O
and O
nearly O
optimal O
- O
doped B-DSC
LSCO B-MAT
single B-DSC
crystals I-DSC
grown O
by O
a O
traveling B-SMT
solvent I-SMT
floating I-SMT
zone I-SMT
method I-SMT
by O
scanning B-CMT
SQUID I-CMT
microscopy I-CMT
. O


the O
La2-xSrxCuO4 B-MAT
( O
LSCO B-MAT
) O
films B-DSC
and O
their O
Tc B-PRO
's O
are O
<nUm> O
– O
<nUm> O
K O
. O


the O
SSM B-CMT
used O
here O
has O
a O
pick-up O
coil O
of O
<nUm> O
mm O
diameter O
and O
the O
magnetic B-PRO
flux I-PRO
sensitivity I-PRO
is O
less O
than O
<nUm> O
mPh0 O
hz-1 O
/ O
<nUm> O
. O


below O
Tc B-PRO
, O
clear O
quantized O
vortices O
are O
observable O
. O


above O
Tc B-PRO
, O
however O
, O
the O
magnetic B-CMT
image I-CMT
never O
becomes O
uniform O
, O
and O
inhomogeneous O
diamagnetic B-PRO
domains I-PRO
appear O
. O


the O
nucleation O
of O
diamagnetic B-PRO
domains I-PRO
starts O
above O
<nUm> O
K O
, O
then O
they O
develop O
with O
expanding O
their O
area O
as O
temperature O
is O
reduced O
and O
connected O
with O
the O
meissner B-PRO
state I-PRO
at O
Tc B-PRO
. O


the O
diamagnetic B-PRO
amplitude O
of O
these O
domains O
is O
significantly O
large O
in O
the O
first O
stage O
and O
then O
decreases O
with O
reducing O
temperature O
. O


structural B-PRO
and O
thermal O
investigation O
of O
gadolinium B-MAT
gallium I-MAT
mixed O
oxides O
obtained O
by O
coprecipitation B-SMT
: O
observation O
of O
a O
new O
metastable B-PRO
phase O


polycrystalline B-DSC
gadolinium B-MAT
gallium I-MAT
mixed O
oxides B-MAT
were O
prepared O
by O
coprecipitation B-SMT
and O
annealing B-SMT
at O
various O
temperatures O
below O
<nUm> O
° O
C O
. O


the O
oxide B-MAT
materials O
appear O
to O
be O
x-ray O
amorphous B-DSC
after O
a O
heat B-SMT
treatment I-SMT
at O
<nUm> O
° O
C O
for O
30h O
, O
but O
after O
30h O
at O
<nUm> O
and O
<nUm> O
° O
C O
a O
major O
, O
unreported O
, O
hexagonal B-SPL
phase O
, O
isostructural O
with O
TAlO3 B-MAT
compounds I-MAT
( I-MAT
where I-MAT
T I-MAT
= I-MAT
Y I-MAT
, I-MAT
Eu I-MAT
, I-MAT
Gd I-MAT
, I-MAT
Tb I-MAT
, I-MAT
Dy I-MAT
, I-MAT
Ho I-MAT
, I-MAT
Er I-MAT
) I-MAT
appears O
to O
crystallize B-DSC
. O


on O
the O
other O
hand O
, O
a O
highly O
energetic O
mechanical B-SMT
treatment I-SMT
of O
the O
amorphous B-DSC
powder I-DSC
previously O
annealed B-SMT
at O
<nUm> O
° O
C O
changes O
considerably O
the O
shape O
and O
position O
of O
exothermal O
events O
occurring O
in O
the O
range O
from O
<nUm> O
up O
to O
<nUm> O
° O
C O
. O


subsequent O
annealing B-SMT
at O
<nUm> O
° O
C O
of O
the O
mechanically B-SMT
treated I-SMT
powder B-DSC
gives O
rise O
to O
the O
complete O
formation O
of O
the O
Ga5Gd3O12 B-MAT
garnet B-SPL
structure O
at O
the O
expense O
of O
the O
hexagonal B-SPL
phase O
and O
of O
the O
minor O
Ga2Gd4O9 B-MAT
oxide I-MAT
phase O
. O


however O
, O
a O
7.0wt O
% O
contamination O
is O
found O
to O
be O
due O
to O
tetragonal B-SPL
zirconia B-MAT
coming O
from O
vials O
and O
balls O
colliding O
media O
. O


the O
garnet B-SPL
phase O
may O
have O
strong O
deviations O
from O
the O
nominal O
stoichiometry B-PRO
of O
the O
garnet B-SPL
, O
as O
suggested O
by O
the O
refined O
lattice B-PRO
parameter I-PRO
obtained O
from O
the O
powder B-CMT
diffraction I-CMT
patterns O
and O
by O
the O
remarkable O
absence O
of O
intensity O
relative O
to O
the O
( O
<nUm> O
) O
bragg O
peak O
position O
. O


determination O
of O
band B-PRO
offset I-PRO
in O
InP B-MAT
/ O
YSZ B-MAT
hetero B-DSC
- I-DSC
junction I-DSC
by O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT


Y B-MAT
- O
stabilized B-DSC
O2Zr B-MAT
( O
YSZ B-MAT
) O
was O
one O
of O
the O
familiar O
high O
dielectric B-PRO
constant I-PRO
films B-DSC
used O
in O
InP B-MAT
field B-APL
effect I-APL
transistors I-APL
. O


however O
, O
the O
structure B-PRO
and O
optical B-PRO
properties I-PRO
of O
YSZ B-MAT
film B-DSC
deposited O
on O
InP B-MAT
substrate B-DSC
were O
rarely O
reported O
. O


the O
band B-PRO
offsets I-PRO
in O
InP B-MAT
/ O
YSZ B-MAT
hetero B-DSC
- I-DSC
junction I-DSC
was O
an O
important O
parameter O
, O
which O
had O
not O
been O
measured O
. O


In O
the O
work O
, O
YSZ B-MAT
films B-DSC
were O
deposited O
on O
InP B-MAT
substrates B-DSC
by O
sputtering B-SMT
. O


the O
optical B-PRO
properties I-PRO
and O
structures B-PRO
of O
YSZ B-MAT
films B-DSC
and O
InP B-MAT
/ O
YSZ B-MAT
interface B-DSC
were O
characterized O
. O


x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
was O
used O
to O
measure O
the O
energy B-PRO
discontinuity I-PRO
in O
the O
valence B-PRO
band I-PRO
of O
the O
InP B-MAT
/ O
YSZ B-MAT
hetero B-DSC
- I-DSC
structure I-DSC
. O


A O
value O
of O
<nUm> O
eV O
was O
obtained O
with O
In B-MAT
3d5 O
as O
the O
reference O
energy O
level O
. O


with O
the O
band B-PRO
gap I-PRO
of O
<nUm> O
eV O
for O
YSZ B-MAT
and O
<nUm> O
eV O
for O
InP B-MAT
, O
this O
indicated O
a O
conduction B-PRO
band I-PRO
offset I-PRO
of O
<nUm> O
eV O
in O
the O
system O
. O


the O
influence O
of O
deposition O
rate O
on O
the O
stress B-PRO
and O
microstructure B-PRO
of O
AlN B-MAT
films B-DSC
deposited O
from O
a O
filtered B-SMT
cathodic I-SMT
vacuum I-SMT
arc I-SMT


aluminium B-MAT
nitride I-MAT
( O
AlN B-MAT
) O
thin B-DSC
films I-DSC
have O
been O
reactively O
deposited O
using O
a O
filtered B-SMT
cathodic I-SMT
vacuum I-SMT
arc I-SMT
system I-SMT
. O


A O
pulsed O
substrate B-DSC
bias O
was O
applied O
in O
order O
to O
increase O
the O
average O
energy O
of O
the O
depositing O
species O
. O


the O
stress B-PRO
and O
microstructure B-PRO
of O
the O
films B-DSC
were O
determined O
as O
a O
function O
of O
the O
deposition O
rate O
and O
pulse O
bias O
amplitude O
/ O
frequency O
. O


the O
stress B-PRO
generated O
in O
films B-DSC
grown O
with O
high O
voltage O
pulsed O
bias O
depended O
on O
the O
deposition O
rate O
and O
a O
transition O
from O
tensile B-PRO
stress I-PRO
to O
compressive B-PRO
stress I-PRO
occurred O
as O
the O
deposition O
rate O
increased O
. O


this O
trend O
was O
accompanied O
by O
progressive O
changes O
in O
the O
microstructure B-PRO
. O


In O
order O
of O
increasing O
deposition O
rate O
, O
the O
films B-DSC
exhibited O
: O
a O
porous B-DSC
structure O
with O
tensile B-PRO
stress I-PRO
; O
a O
dense B-PRO
AlN B-MAT
film B-DSC
with O
compressive B-PRO
stress I-PRO
; O
and O
a O
dense B-PRO
AlN B-MAT
film B-DSC
showing O
evidence O
of O
a O
thermally O
induced O
reduction O
in O
stress B-PRO
. O


anomalous O
relaxation O
in O
amorphous B-DSC
C13Cr21Fe140Mn3P23 B-MAT


the O
structural B-PRO
relaxation I-PRO
kinetics I-PRO
for O
isothermal B-SMT
annealed I-SMT
C13Cr21Fe140Mn3P23 B-MAT
are O
examined O
via O
the O
curie B-PRO
temperature I-PRO
, O
Tc B-PRO
, O
and O
mossbauer B-CMT
spectroscopy I-CMT
. O


anomalous B-PRO
kinetics I-PRO
were O
detected O
below O
<nUm> O
° O
C O
, O
and O
a O
phenomenologic O
description O
is O
given O
of O
the O
data O
obtained O
. O


scattering O
of O
charge O
carriers O
in O
transparent B-PRO
and O
conducting B-PRO
thin O
oxide B-MAT
films B-DSC
with O
a O
non-parabolic B-PRO
conduction I-PRO
band I-PRO


A O
simple O
model O
of O
the O
conduction B-PRO
mechanism I-PRO
, O
with O
the O
assumption O
of O
a O
non-parabolic B-PRO
conduction I-PRO
band I-PRO
, O
has O
been O
applied O
to O
wide O
band B-PRO
gap I-PRO
, O
degenerate B-PRO
thin B-DSC
oxide B-MAT
films B-DSC
. O


the O
scattering B-PRO
mechanism I-PRO
is O
explained O
in O
terms O
of O
intergrain B-PRO
potential I-PRO
barriers I-PRO
and O
charged O
point O
defects O
. O


A O
comparison O
between O
theoretical O
results O
and O
experimental O
data O
is O
made O
for O
O2Sn B-MAT
and O
CdIn2O4 B-MAT
. O


the O
PZT B-MAT
system O
( O
PbTixZr1 B-MAT
– I-MAT
x I-MAT
O3 I-MAT
, I-MAT
<nUm> I-MAT
≤ I-MAT
x I-MAT
≤ I-MAT
<nUm> I-MAT
) O
: O
the O
real O
phase B-PRO
diagram I-PRO
of O
solid B-DSC
solutions I-DSC
( O
room O
temperature O
) O
( O
part O
<nUm> O
) O


the O
sequence O
of O
phase B-PRO
transformations I-PRO
in O
the O
ceramic B-DSC
system O
PbTixZr1-xO3 B-MAT
( I-MAT
<nUm> I-MAT
≤ I-MAT
x I-MAT
≤ I-MAT
<nUm> I-MAT
) I-MAT
is O
determined O
and O
the O
real O
phase B-PRO
diagram I-PRO
of O
solid B-DSC
solutions I-DSC
is O
built O
. O


the O
observed O
periodicity O
of O
phase O
formation O
processes O
in O
the O
rhombohedral B-SPL
and O
tetragonal B-SPL
regions O
is O
explained O
by O
the O
real O
( O
defective O
) O
structure B-PRO
of O
PZT B-MAT
system O
ceramics B-DSC
, O
which O
is O
in O
many O
respects O
related O
to O
the O
variable O
valence O
of O
Ti B-MAT
ions O
and O
, O
as O
a O
result O
, O
to O
formation O
, O
accumulation O
, O
and O
ordering O
of O
point B-PRO
defects I-PRO
( O
oxygen B-PRO
vacancies I-PRO
) O
and O
their O
elimination O
by O
crystallographic O
shifts O
. O


the O
obtained O
results O
are O
useful O
in O
interpretation O
of O
the O
macroscopic B-PRO
properties I-PRO
of O
ceramics B-DSC
based O
on O
the O
PZT B-MAT
system O
. O


single B-DSC
crystal I-DSC
investigation O
of O
the O
ternary O
indides O
Ce2In5Pd4 B-MAT
and O
CeIn4Pd B-MAT


the O
ternary O
indides O
Ce2In5Pd4 B-MAT
and O
CeIn4Pd B-MAT
were O
synthesized O
by O
arc B-SMT
- I-SMT
melting I-SMT
of O
the O
elements O
and O
subsequent O
annealing B-SMT
at O
870K O
for O
<nUm> O
weeks O
. O


the O
crystal B-PRO
structures I-PRO
of O
the O
compounds O
were O
solved O
from O
the O
single B-DSC
crystal I-DSC
x-ray B-CMT
data O
. O


Ce2In5Pd4 B-MAT
crystallizes O
in O
the O
new O
monoclinic B-SPL
structure O
( O
space O
group O
P21 B-SPL
/ I-SPL
m I-SPL
, O
mP22 B-SPL
) O
, O
a B-PRO
= O
<nUm> O
Å O
, O
b B-PRO
= O
<nUm> O
Å O
, O
c B-PRO
= O
<nUm> O
Å O
, O
β B-PRO
= O
<nUm> O
° O
, O
V B-PRO
= O
<nUm> O
A3 O
, O
z B-PRO
= O
<nUm> O
, O
r B-PRO
= O
<nUm> O
, O
w B-PRO
r I-PRO
<nUm> I-PRO
= O
<nUm> O
for O
<nUm> O
reflections O
. O


CeIn4Pd B-MAT
adopts O
the O
Al4NiY B-MAT
type O
structure O
( O
orthorhombic B-SPL
, O
cmcm B-SPL
) O
a B-PRO
= O
<nUm> O
Å O
, O
b B-PRO
= O
<nUm> O
Å O
, O
c B-PRO
= O
<nUm> O
Å O
, O
V B-PRO
= O
<nUm> O
A3 O
, O
z B-PRO
= O
<nUm> O
, O
r B-PRO
= O
<nUm> O
, O
w B-PRO
r I-PRO
<nUm> I-PRO
= O
<nUm> O
for O
<nUm> O
reflections O
. O


domain B-PRO
structure I-PRO
of O
a O
tetragonal B-SPL
antiferromagnet B-PRO


A O
theory O
of O
the O
<nUm> O
° O
and O
<nUm> O
° O
domain B-PRO
structure I-PRO
in O
an O
easy O
- O
plane O
tetragonal B-SPL
antiferromagnet B-PRO
with O
nonuniform O
internal O
magnetostrictive B-PRO
and O
mechanical B-PRO
stresses I-PRO
has O
been O
developed O
. O


the O
reconstruction O
of O
domain B-PRO
structure I-PRO
in O
an O
external O
magnetic O
field O
was O
investigated O
. O


dependencies O
of O
critical B-PRO
fields I-PRO
of I-PRO
stability I-PRO
loss I-PRO
of O
the O
<nUm> O
° O
and O
<nUm> O
° O
domain B-PRO
structures I-PRO
upon O
a O
directional O
external O
pressure O
, O
and O
magnetostrictive B-PRO
and O
nonuniform O
mechanical B-PRO
stresses I-PRO
have O
been O
determined O
. O


the O
dependence O
of O
the O
magnetization B-PRO
curve I-PRO
on O
mechanical B-PRO
stresses I-PRO
has O
also O
been O
determined O
. O


hardening B-PRO
- I-PRO
softening I-PRO
transition I-PRO
in O
pre-annealed B-SMT
and O
slightly O
deformed O
Fe3Ni7 B-MAT
nanoalloy B-DSC


the O
effect O
of O
slight O
deformation O
on O
microstructure B-PRO
evolution O
and O
microhardness B-PRO
variation O
in O
pre-annealed B-SMT
Fe3Ni7 B-MAT
nanoalloy B-DSC
has O
been O
investigated O
. O


an O
obvious O
hardening B-PRO
- I-PRO
to I-PRO
- I-PRO
softening I-PRO
transition I-PRO
is O
observed O
at O
the O
rolling B-SMT
strain O
of O
∼ O
<nUm> O
% O
. O


further O
x-ray B-CMT
diffraction I-CMT
analysis I-CMT
and O
transmission B-CMT
electron I-CMT
microscopy I-CMT
observation O
reveal O
a O
accumulation O
of O
dislocation B-PRO
, O
stacking B-PRO
fault I-PRO
and O
twin B-PRO
fault I-PRO
before O
the O
sample O
deformed O
to O
∼ O
<nUm> O
% O
, O
which O
is O
considered O
the O
dominant O
contribution O
to O
strain B-SMT
hardening I-SMT
. O


moreover O
, O
despite O
of O
rolling B-SMT
the O
sample O
at O
a O
relative O
small O
strain O
level O
, O
obvious O
grain O
growth O
takes O
place O
overall O
deformation O
process O
. O


with O
the O
increasing O
grain B-PRO
size I-PRO
, O
Fe3Ni7 B-MAT
nanoalloy B-DSC
enters O
into O
strain O
softening O
region O
due O
to O
a O
decrease O
in O
the O
quantity O
of O
defect B-PRO
densities I-PRO
when O
the O
rolling B-SMT
strain O
exceeds O
∼ O
<nUm> O
% O
. O


crystal B-PRO
structure I-PRO
and O
vibrational B-PRO
properties I-PRO
of O
nonlinear O
BEu3O9W B-MAT
and O
BNd3O9W B-MAT
crystals B-DSC


IR B-CMT
, O
raman B-CMT
, O
x-ray B-CMT
, O
electron B-CMT
absorption I-CMT
and O
luminescence B-CMT
studies O
have O
been O
performed O
for O
novel O
laser O
BNd3O9W B-MAT
and O
BEu3O9W B-MAT
borotungstates I-MAT
exhibiting O
non-centrosymmetric B-PRO
crystal I-PRO
structures I-PRO
. O


the O
assignment O
of O
observed O
vibrational B-PRO
modes I-PRO
to O
respective O
symmetry O
and O
vibrations O
of O
atoms O
has O
been O
proposed O
. O


these O
studies O
have O
shown O
that O
vibrational B-PRO
and O
electronic B-PRO
properties I-PRO
of O
these O
crystals B-DSC
can O
be O
better O
explained O
when O
P63 B-SPL
symmetry O
is O
assumed O
, O
instead O
of O
previously O
proposed O
P3 B-SPL
one O
. O


the O
crystal B-CMT
structure I-CMT
refinement I-CMT
has O
also O
confirmed O
that O
symmetry B-PRO
of O
the O
BEu3O9W B-MAT
borotungstates I-MAT
is O
P63 B-SPL
, O
not O
P3 B-SPL
. O


structural B-PRO
and O
luminescence B-PRO
properties I-PRO
of O
ca1-x B-MAT
La I-MAT
x I-MAT
S I-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
− I-MAT
<nUm> I-MAT
) I-MAT


the O
structure B-PRO
and O
photoluminescence B-CMT
of O
Ca1-xLaxS B-MAT
( I-MAT
x I-MAT
= I-MAT
<nUm> I-MAT
– I-MAT
<nUm> I-MAT
) I-MAT
were O
investigated O
. O


the O
samples O
were O
prepared O
by O
sulfurizing B-SMT
the O
mixture O
of O
CaCO3and B-MAT
La2O3in I-MAT
the O
flux O
of O
CNa2O3 B-MAT
– O
S O
or O
CK2O3 B-MAT
– O
S O
, O
and O
by O
gas B-SMT
reaction I-SMT
with O
CS2 B-MAT
. O


by O
using O
different O
methods O
of O
preparation O
, O
defect B-PRO
structure I-PRO
and O
concentration O
could O
be O
controlled O
chemically O
. O


Ca1-xLaxS B-MAT
prepared O
in O
the O
CNa2O3 B-MAT
– O
S O
flux O
has O
a O
wider O
solid B-DSC
solution I-DSC
range O
than O
that O
prepared O
in O
the O
CK2O3 B-MAT
– O
S O
flux O
, O
and O
such O
a O
feature O
seems O
to O
be O
due O
to O
similar O
ionic O
size O
of O
na+and O
ca2+ O
. O


As O
the O
substitution O
of O
la3+increases O
, O
the O
band B-PRO
gap I-PRO
of O
the O
host O
material O
decreases O
due O
to O
the O
increase O
of O
the O
lattice B-PRO
parameters I-PRO
, O
and O
the O
photoluminescence B-CMT
spectra O
of O
the O
Ca1-xLaxS B-MAT
shift O
to O
longer O
wavelengths O
. O


since O
la3+ion O
itself O
is O
transparent B-PRO
to O
ultraviolet O
radiation O
, O
vacancies B-PRO
( O
VCa2+ O
, O
VS2+ O
) O
and O
substituted O
ions O
( O
Na+Ca2+ O
, O
La3+Ca2+ O
) O
seem O
to O
be O
associated O
with O
luminescence O
centers O
. O


the O
acceptor B-PRO
levels I-PRO
of O
Na+Ca2+and O
VCa2+are O
estimated O
to O
be O
about O
<nUm> O
and O
<nUm> O
eV O
above O
the O
valence B-PRO
band I-PRO
, O
respectively O
, O
and O
the O
donor B-PRO
levels I-PRO
of O
La3+Ca2+and O
VS2-to O
be O
about O
<nUm> O
eV O
below O
the O
conduction B-PRO
band I-PRO
. O


the O
emission B-PRO
bands I-PRO
observed O
at O
<nUm> O
– O
<nUm> O
nm O
suggest O
the O
recombination O
processes O
of O
donors O
with O
acceptors O
. O


microwave B-PRO
dielectric I-PRO
properties I-PRO
of O
(ABi)1 B-MAT
/ I-MAT
2MoO4 I-MAT
( I-MAT
A I-MAT
= I-MAT
Li I-MAT
, I-MAT
Na I-MAT
, I-MAT
K I-MAT
, I-MAT
Rb I-MAT
, I-MAT
Ag I-MAT
) I-MAT
type O
ceramics B-DSC
with O
ultra-low O
firing B-SMT
temperatures O


A O
series O
of O
(ABi)1 B-MAT
/ I-MAT
2MoO4 I-MAT
( I-MAT
A I-MAT
= I-MAT
Li I-MAT
, I-MAT
Na I-MAT
, I-MAT
K I-MAT
, I-MAT
Rb I-MAT
, I-MAT
Ag I-MAT
) I-MAT
compositions B-PRO
were O
studied O
in O
regard O
to O
the O
sintering B-PRO
behavior I-PRO
, O
phase B-PRO
composition I-PRO
, O
microwave B-PRO
dielectric I-PRO
properties I-PRO
and O
chemical B-PRO
compatibility I-PRO
with O
silver B-MAT
and O
/ O
or O
aluminum B-MAT
for O
electrodes B-APL
. O


all O
the O
(ABi)1 B-MAT
/ I-MAT
2MoO4 I-MAT
( I-MAT
A I-MAT
= I-MAT
Li I-MAT
, I-MAT
Na I-MAT
, I-MAT
K I-MAT
, I-MAT
Rb I-MAT
, I-MAT
Ag I-MAT
) I-MAT
ceramics B-DSC
could O
be O
sintered B-SMT
below O
<nUm> O
° O
C O
with O
relative B-PRO
densities I-PRO
above O
<nUm> O
% O
. O


whereas O
the O
BiK B-MAT
/ I-MAT
2MoO4 I-MAT
ceramic B-DSC
can O
be O
sintered B-SMT
to O
a O
high O
density B-PRO
at O
around O
<nUm> O
° O
C O
/ O
2hrs O
with O
a O
relative B-PRO
permittivity I-PRO
∼ O
<nUm> O
, O
a O
qf B-PRO
value I-PRO
of O
<nUm> O
GHz O
and O
a O
temperature B-PRO
coefficient I-PRO
of I-PRO
resonant I-PRO
frequency I-PRO
( O
TCF B-PRO
) O
∼ O
<nUm> O
ppm O
/ O
° O
C O
. O


furthermore O
, O
from O
the O
XRD B-CMT
analysis O
of O
co-fired B-SMT
ceramics B-DSC
, O
the O
BiK B-MAT
/ I-MAT
2MoO4 I-MAT
ceramic B-DSC
reacts O
with O
silver B-MAT
but O
not O
with O
aluminum B-MAT
at O
its O
densification B-PRO
temperature I-PRO
. O


the O
(ABi)1 B-MAT
/ I-MAT
2MoO4 I-MAT
( I-MAT
A I-MAT
= I-MAT
Li I-MAT
, I-MAT
Na I-MAT
, I-MAT
K I-MAT
, I-MAT
Rb I-MAT
, I-MAT
Ag I-MAT
) I-MAT
type O
ceramics B-DSC
can O
all O
be O
considered O
into O
the O
new O
field O
of O
ultra-low B-APL
temperature I-APL
co-firing I-APL
dielectrics I-APL
for O
multilayer B-APL
applications I-APL
. O


characteristics O
of O
indium B-MAT
– I-MAT
tin I-MAT
oxide I-MAT
thin B-DSC
films I-DSC
grown O
on O
flexible O
plastic O
substrates B-DSC
at O
room O
temperature O


transparent B-PRO
and O
conductive B-PRO
indium B-MAT
– I-MAT
tin I-MAT
oxide I-MAT
( O
ITO B-MAT
) O
thin B-DSC
films I-DSC
were O
deposited O
on O
polyethersulfone O
( O
PES O
) O
flexible O
plastic O
substrates B-DSC
by O
DC B-SMT
magnetron I-SMT
sputtering I-SMT
. O


the O
crystalline B-PRO
structure I-PRO
and O
optical B-PRO
– I-PRO
electric I-PRO
characteristics I-PRO
were O
investigated O
to O
achieve O
the O
optimum O
room O
- O
temperature O
growth O
conditions O
. O


the O
crystalline B-PRO
orientation I-PRO
and O
the O
surface B-PRO
morphology I-PRO
were O
characterized O
by O
x-ray B-CMT
diffraction I-CMT
( O
XRD B-CMT
) O
and O
the O
atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
, O
respectively O
. O


the O
ITO B-MAT
/ O
substrate B-DSC
interfaces I-DSC
were O
observed O
by O
scanning B-CMT
electron I-CMT
microscopy I-CMT
( O
SEM B-CMT
) O
. O


In O
addition O
, O
the O
resistivity B-PRO
, O
the O
hall B-PRO
effect I-PRO
, O
and O
the O
optical B-PRO
transmittance I-PRO
were O
measured O
to O
characterize O
the O
photo B-PRO
- I-PRO
electric I-PRO
properties I-PRO
of O
as B-DSC
grown I-DSC
films I-DSC
. O


it O
is O
found O
that O
the O
ITO B-MAT
films B-DSC
are O
epitaxially O
grown O
with O
the O
orientations O
<222>  O
, O
<400>  O
, O
and O
<440>  O
perpendicular O
to O
the O
film B-DSC
plane O
. O


moreover O
, O
the O
resistivity B-PRO
of O
thin B-DSC
film I-DSC
decreases O
with O
an O
increase O
in O
the O
( O
<nUm> O
) O
diffraction O
intensity O
. O


the O
obtained O
optimum O
growth O
conditions O
for O
the O
room O
- O
temperature O
deposition O
are O
: O
DC O
power O
= O
<nUm> O
W O
, O
deposition O
pressure O
= O
2.0mTorr O
, O
and O
the O
gas O
of O
Ar O
: O
O O
= O
<nUm> O
: O
<nUm> O
. O


with O
the O
optimum O
conditions O
, O
the O
resistivity B-PRO
of O
<nUm> O
× O
10-3 O
ocm O
, O
carrier B-PRO
concentration I-PRO
of O
<nUm> O
× O
<nUm> O
cm-3 O
, O
and O
transmittance B-PRO
of O
<nUm> O
% O
for O
films B-DSC
grown O
on O
PES O
substrates B-DSC
are O
obtained O
. O


comparing O
the O
results O
with O
those O
reported O
by O
other O
workers O
, O
we O
conclude O
that O
improved O
photo B-PRO
- I-PRO
electric I-PRO
properties I-PRO
of O
ITO B-MAT
films B-DSC
can O
be O
obtained O
by O
using O
the O
DC B-SMT
magnetron I-SMT
sputtering I-SMT
technique O
at O
room O
temperature O
. O


study O
of O
AlN B-MAT
and O
N4Si3 B-MAT
powders B-DSC
synthesized O
by O
SHS B-SMT
reactions I-SMT


the O
particular O
characteristics O
of O
aluminum B-MAT
nitride I-MAT
and O
silicon B-MAT
nitride I-MAT
powders B-DSC
obtained O
by O
SHS B-SMT
technology I-SMT
are O
reported O
. O


the O
synthesized O
powders B-DSC
showed O
high O
particle B-PRO
sizes I-PRO
that O
are O
not O
suitable O
for O
sintering B-SMT
. O


consequently O
, O
the O
powders B-DSC
were O
subjected O
to O
an O
energetic O
milling B-SMT
process O
using O
an O
attritor B-SMT
with O
different O
milling B-SMT
media O
and O
times O
. O


silicon B-MAT
nitride I-MAT
powders B-DSC
were O
milled B-SMT
with O
N4Si3 B-MAT
balls B-DSC
while O
for O
aluminum B-MAT
nitride I-MAT
powders B-DSC
different O
media O
( O
N4Si3 B-MAT
, O
Al2O3 B-MAT
, O
O2Zr B-MAT
) O
were O
used O
. O


particle B-PRO
size I-PRO
and O
specific B-PRO
surface I-PRO
area I-PRO
were O
determined O
in O
both O
powders B-DSC
as O
a O
function O
of O
the O
milling B-SMT
variables O
. O


the O
increase O
in O
the O
level O
of O
impurities O
associated O
with O
the O
milling B-SMT
procedure O
was O
measured O
. O


the O
morphology B-PRO
of O
each O
powder B-DSC
was O
analyzed O
before O
and O
after O
milling B-SMT
by O
scanning B-CMT
electron I-CMT
microscopy I-CMT
. O


the O
results O
were O
evaluated O
by O
comparing O
with O
characteristics O
of O
typical O
commercial O
powders B-DSC
of O
AlN B-MAT
and O
N4Si3 B-MAT
, O
to O
establish O
the O
differences O
with O
the O
SHS B-SMT
powders B-DSC
. O


© O


effect O
of O
external O
pressure O
and O
grain B-PRO
size I-PRO
on O
the O
phase B-PRO
transition I-PRO
in O
the O
Gd B-MAT
- O
doped B-DSC
BaO3Ti B-MAT
ceramic B-DSC


various O
particle B-PRO
sizes I-PRO
of O
starting O
barium B-MAT
titanate I-MAT
were O
used O
to O
investigate O
the O
effect O
of O
external O
pressure O
and O
grain B-PRO
size I-PRO
on O
the O
phase B-PRO
transition I-PRO
in O
the O
Gd B-MAT
- O
doped B-DSC
BaO3Ti B-MAT
ceramic B-DSC
. O


the O
particle B-PRO
size I-PRO
of O
starting O
BaO3Ti B-MAT
was O
somewhat O
proportional O
to O
the O
grain B-PRO
size I-PRO
, O
while O
internal B-PRO
stress I-PRO
is O
inversely O
related O
to O
the O
grain B-PRO
size I-PRO
. O


grain B-PRO
size I-PRO
refinement O
as O
well O
as O
external O
pressure O
shifts O
Tc B-PRO
to O
a O
lower O
temperature O
, O
whereas O
orthorhombic B-SPL
- O
to O
- O
rhombohedral B-SPL
T2 B-PRO
shifts O
to O
a O
higher O
temperature O
. O


the O
tetragonal B-SPL
- O
to O
- O
orthorhombic B-SPL
T1 B-PRO
decreases O
with O
increase O
in O
pressure O
, O
reaches O
a O
minimum O
value O
, O
and O
then O
increases O
. O


structure B-PRO
and O
properties O
of O
Al10BCr10Mn10Mo10N10Ni10Zr10 B-MAT
x I-MAT
coatings B-APL
prepared O
by O
reactive B-SMT
DC I-SMT
sputtering I-SMT


the O
microstructure B-PRO
and O
properties O
of O
Al10BCr10Mn10Mo10Ni10Zr10 B-MAT
nitride I-MAT
films B-DSC
prepared O
by O
reactive B-SMT
direct I-SMT
current I-SMT
sputtering I-SMT
at O
various O
N O
- O
to O
- O
Ar O
flow O
ratios O
( O
RN O
) O
were O
investigated O
. O


the O
films B-DSC
had O
an O
amorphous B-DSC
structure B-PRO
at O
low O
RN O
and O
a O
face B-SPL
- I-SPL
centered I-SPL
cubic I-SPL
structure B-PRO
at O
a O
high O
RN O
. O


As O
the O
RN O
increased O
, O
the O
decrease O
in O
clusters B-DSC
and O
defects O
resulted O
in O
a O
dense O
columnar O
structure O
and O
low O
surface B-PRO
roughness I-PRO
. O


the O
peak O
hardness B-PRO
and O
modulus B-PRO
of O
the O
nitride B-MAT
films B-DSC
were O
<nUm> O
and O
<nUm> O
GPa O
, O
respectively O
. O


the O
enhanced O
hardness B-PRO
is O
ascribed O
to O
the O
increased O
metal O
– O
nitrogen O
bonding O
, O
solid B-SMT
solution I-SMT
strengthening I-SMT
of O
several O
metallic B-PRO
nitrides B-MAT
, O
and O
lattice B-PRO
strain I-PRO
. O


the O
nitride B-MAT
films B-DSC
deposited O
at O
RN O
= O
<nUm> O
, O
<nUm> O
, O
and O
<nUm> O
had O
friction B-PRO
coefficients I-PRO
of O
<nUm> O
, O
<nUm> O
and O
<nUm> O
, O
respectively O
. O


wear B-PRO
- I-PRO
out I-PRO
failure I-PRO
occurred O
within O
400s O
when O
RN O
= O
<nUm> O
and O
<nUm> O
. O


adhesive B-PRO
wear I-PRO
was O
the O
dominant O
wear B-PRO
mechanism I-PRO
. O


optimizing O
electrical O
poling O
for O
tetragonal B-SPL
, O
lead B-PRO
- I-PRO
free I-PRO
BZT B-MAT
– O
BCT B-MAT
piezoceramic B-PRO
alloys B-DSC


the O
piezoelectric B-PRO
properties I-PRO
of O
tetragonal B-SPL
BZT B-MAT
– O
BCT B-MAT
materials O
have O
been O
shown O
to O
be O
improved O
by O
using O
the O
field B-SMT
cooling I-SMT
poling I-SMT
method O
. O


it O
is O
shown O
that O
the O
piezoelectric B-PRO
coefficient I-PRO
of O
tetragonal B-SPL
BZT B-MAT
– O
BCT B-MAT
materials O
increases O
with O
higher O
poling O
temperature O
, O
and O
the O
optimum O
poling O
temperature O
lies O
near O
the O
curie B-PRO
temperatures I-PRO
for O
a O
broad O
range O
of O
compositions B-PRO
. O


it O
is O
also O
observed O
from O
in O
situ O
x-ray B-CMT
diffraction I-CMT
measurements O
with O
an O
applied O
electric O
field O
that O
the O
magnitude O
of O
domain B-PRO
alignment I-PRO
is O
enhanced O
with O
electrical O
poling O
at O
higher O
electric O
fields O
, O
whereas O
the O
remnant O
ferroelastic B-PRO
domain I-PRO
texture I-PRO
is O
not O
affected O
. O


furthermore O
, O
these O
results O
show O
a O
direct O
correlation O
between O
the O
development O
of O
internal B-PRO
bias I-PRO
field I-PRO
, O
which O
is O
induced O
by O
the O
accumulation O
of O
defect B-PRO
charge I-PRO
carriers I-PRO
, O
and O
the O
enhanced O
piezoelectric B-PRO
coefficient I-PRO
. O


these O
observations O
suggest O
an O
important O
role O
played O
by O
the O
alignment O
of O
defect B-PRO
charge I-PRO
carriers I-PRO
in O
achieving O
optimum O
piezoelectric B-PRO
coefficient I-PRO
in O
lead B-PRO
- I-PRO
free I-PRO
piezoelectric I-PRO
ceramics B-DSC
. O


elastic B-PRO
and O
viscous B-PRO
behavior I-PRO
of O
an O
amorphous B-DSC
Al15Ni25Y27Zr33 B-MAT
alloy B-DSC
with O
a O
two O
- O
stage O
glass B-PRO
transition I-PRO


A O
Al15Ni25Y27Zr33 B-MAT
amorphous B-DSC
alloy I-DSC
was O
found O
to O
exhibit O
a O
two O
- O
stage O
glass B-PRO
transition I-PRO
and O
crystallization O
processes O
because O
of O
the O
insoluble O
nature O
between O
Zr B-MAT
and O
Y B-MAT
. O


the O
first O
- O
stage O
exothermic O
reaction O
is O
due O
to O
the O
precipitation O
of O
the O
nanoscale B-DSC
Y B-MAT
- O
rich O
phase O
from O
the O
amorphous B-DSC
matrix I-DSC
and O
the O
precipitates B-DSC
cause O
the O
suppression O
of O
the O
decrease O
in O
viscosity B-PRO
and O
elasticity B-PRO
in O
the O
supercooled B-SMT
liquid O
region O
. O


bipolar B-PRO
strain I-PRO
hysteresis I-PRO
of O
poled O
composites B-DSC
with O
Nd B-MAT
– O
Mn B-MAT
- O
doped B-DSC
PZT B-MAT
fibres B-DSC


Nd B-MAT
– O
Mn B-MAT
- O
doped B-DSC
PZT B-MAT
fibres B-DSC
were O
produced O
using O
the O
sol B-SPL
– I-SPL
gel I-SPL
process O
. O


the O
PZT B-MAT
was O
doped B-DSC
with O
<nUm> O
mol O
% O
neodymium B-MAT
and O
an O
amount O
of O
<nUm> O
mol O
% O
or O
<nUm> O
mol O
% O
manganese B-MAT
. O


the O
fibres B-DSC
were O
investigated O
with O
respect O
to O
microstructure B-PRO
, O
composition B-PRO
after O
sintering B-SMT
and O
phase B-PRO
content I-PRO
. O


strain O
and O
polarisation B-PRO
were O
measured O
after O
imbedding O
the O
fibres B-DSC
in O
a O
polymer O
matrix B-DSC
. O


the O
resulting O
<nUm> O
– O
3-composites B-DSC
were O
poled O
with O
constant O
electric O
field O
. O


measurements O
of O
strain O
and O
polarisation B-PRO
were O
done O
using O
a O
sinusoidal B-CMT
voltage I-CMT
of I-CMT
high I-CMT
amplitude I-CMT
. O


instead O
of O
a O
shifted O
strain B-PRO
hysteresis I-PRO
( O
butterfly B-PRO
loop I-PRO
) O
an O
asymmetric B-PRO
strain I-PRO
– I-PRO
field I-PRO
relation I-PRO
was O
observed O
. O


the O
asymmetry O
depends O
on O
the O
direction O
of O
the O
applied O
voltage O
. O


for O
the O
half O
wave O
with O
voltage O
parallel O
to O
former O
poling O
voltage O
the O
strain B-PRO
curve I-PRO
is O
linear O
. O


for O
the O
other O
half O
wave O
the O
strain B-PRO
curve I-PRO
inflates O
and O
there O
is O
a O
region O
with O
no O
change O
of O
strain O
. O


possible O
explanations O
for O
the O
asymmetric B-PRO
strain I-PRO
behaviour I-PRO
are O
discussed O
. O


thermal B-PRO
, O
electrochemical B-PRO
and O
structural B-PRO
properties I-PRO
of O
stabilized O
LiNiyCo1-y B-MAT
− I-MAT
zMzO2 I-MAT
lithium B-APL
- I-APL
ion I-APL
cathode I-APL
material O
prepared O
by O
a O
chemical B-SMT
route I-SMT


layered B-DSC
compounds O
, O
such O
as O
LiNiO2 B-MAT
and O
CoLiO2 B-MAT
, O
have O
been O
extensively O
studied O
as O
active O
cathodic B-APL
materials I-APL
in O
lithium B-APL
- I-APL
ion I-APL
batteries I-APL
. O


mixed O
oxides B-MAT
having O
general O
formula O
LiNiyCo1-yO2 B-MAT
represent O
a O
good O
compromise O
between O
the O
limited O
cyclability B-PRO
of O
LiNiO2 B-MAT
and O
the O
high O
cost O
of O
CoLiO2 B-MAT
. O


however O
, O
recent O
studies O
have O
demonstrated O
that O
LiNiyCo1-yO2 B-MAT
compounds O
are O
thermally B-PRO
unstable I-PRO
in O
their O
charged O
state O
, O
undergoing O
exothermic O
reactions O
that O
might O
cause O
thermal O
runaway O
and O
safety O
concern O
. O


the O
stability B-PRO
of O
the O
compounds O
may O
be O
greatly O
controlled O
by O
doping O
with O
a O
suitable O
metal O
, O
m O
= O
Al B-MAT
, O
Mg B-MAT
. O


In O
this O
work O
we O
further O
investigate O
the O
role O
of O
the O
doping O
metal O
on O
the O
thermal B-PRO
, O
electrochemical B-PRO
and O
structural B-PRO
characteristics I-PRO
of O
the O
LiNiyCo1-y B-MAT
− I-MAT
zMzO2 I-MAT
electrode B-APL
materials O
. O


these O
materials O
were O
prepared O
using O
a O
soft B-SMT
chemistry I-SMT
route I-SMT
, O
to O
achieve O
the O
proper O
control O
of O
the O
chemical B-PRO
homogeneity I-PRO
and O
of O
the O
microstructural B-PRO
properties I-PRO
of O
the O
final O
samples O
. O


the O
thermal B-PRO
behavior I-PRO
of O
the O
doped B-DSC
LiNiyCo1-y B-MAT
− I-MAT
zMzO2 I-MAT
, O
where O
m O
= O
Al B-MAT
, O
was O
studied O
using O
differential B-CMT
scanning I-CMT
calorimetry I-CMT
. O


the O
structural B-PRO
properties I-PRO
upon O
cycling O
were O
investigated O
by O
a O
recently O
, O
in-house O
developed O
, O
in O
situ O
energy B-CMT
dispersive I-CMT
x-ray I-CMT
diffraction I-CMT
( O
EDXD B-CMT
) O
technique O
. O


the O
reversibility B-PRO
and O
rate B-PRO
capabilities I-PRO
of O
the O
cathodes B-APL
in O
lithium B-APL
cells I-APL
were O
characterized O
using O
electrochemical B-APL
equipment I-APL
. O


scanning B-CMT
tunneling I-CMT
microscopy I-CMT
study O
of O
the O
epitaxial O
growth O
of O
strained O
As50Ga9In41 B-MAT
layers B-DSC
on O
InP B-MAT


the O
2D O
– O
3D O
growth O
mode O
transition O
of O
compressively O
strained O
InxGa1-xAs B-MAT
layers B-DSC
( O
x O
= O
<nUm> O
or O
<nUm> O
% O
lattice B-PRO
mismatch I-PRO
) O
grown O
on O
an O
As100Ga47In53 B-MAT
buffer B-DSC
layer I-DSC
lattice O
matched O
to O
InP B-MAT
was O
studied O
using O
scanning B-CMT
tunneling I-CMT
microscopy I-CMT
. O


up O
to O
<nUm> O
deposited O
monolayers B-DSC
, O
a O
layer B-DSC
by O
layer B-DSC
growth O
mode O
is O
maintained O
. O


the O
surface B-DSC
layer I-DSC
appears O
to O
be O
more O
compact O
for O
the O
strained O
layers B-DSC
than O
for O
the O
lattice O
matched O
buffer B-DSC
layer I-DSC
. O


after O
<nUm> O
monolayers B-DSC
were O
deposited O
the O
surface B-PRO
topography I-PRO
undergoes O
very O
significant O
change O
and O
threedimensional O
patterns O
, O
highly O
anisotropic B-PRO
in O
the O
growing O
plane O
, O
appear O
. O


these O
remarkable O
evolutions O
are O
attributed O
to O
the O
competition O
between O
surface B-PRO
energy I-PRO
necessary O
to O
form O
new O
island O
facets O
and O
elastic B-PRO
energy I-PRO
relaxation I-PRO
allowed O
with O
small O
sized O
islands O
. O


low O
temperature O
direct O
growth O
of O
nanocrystalline B-DSC
silicon B-MAT
carbide I-MAT
films B-DSC


hydrogenated B-SMT
silicon B-MAT
carbide I-MAT
thin B-DSC
films I-DSC
have O
been O
grown O
directly O
by O
reactive B-SMT
magnetron I-SMT
co-sputtering I-SMT
of O
Si B-MAT
and O
C B-MAT
targets O
in O
a O
pure O
hydrogen B-SMT
plasma I-SMT
at O
substrate B-DSC
temperatures O
, O
TS O
, O
ranging O
between O
<nUm> O
and O
<nUm> O
° O
C O
. O


the O
results O
reveal O
the O
achievement O
of O
nanocrystalline B-DSC
CSi B-MAT
at O
a O
deposition O
temperature O
of O
<nUm> O
° O
C O
, O
the O
lowest O
temperature O
ever O
reported O
for O
the O
sputtering B-SMT
method O
. O


both O
intensity O
increase O
and O
peak O
narrowing O
of O
the O
lorentzian B-PRO
infrared I-PRO
absorption I-PRO
band I-PRO
at O
∼ O
<nUm> O
cm-1 O
ascribed O
to O
Si B-PRO
– I-PRO
C I-PRO
bonds I-PRO
in O
the O
crystalline B-DSC
state O
, O
are O
indicative O
of O
the O
continuing O
improvement O
of O
the O
crystallinity B-PRO
when O
TS O
is O
increased O
beyond O
<nUm> O
° O
C O
. O


according O
to O
the O
x-ray B-CMT
photoelectron I-CMT
spectroscopy I-CMT
( O
XPS B-CMT
) O
measurements O
, O
the O
CSi B-MAT
layers B-DSC
are O
carbon B-MAT
rich O
with O
an O
atomic B-PRO
ratio I-PRO
C I-PRO
/ I-PRO
Si I-PRO
approaching O
<nUm> O
for O
TS O
≈ O
<nUm> O
– O
<nUm> O
° O
C O
. O


the O
Si B-MAT
atoms O
are O
found O
, O
however O
, O
tetracoordinated O
with O
only O
the O
C B-MAT
atoms O
, O
in O
perfect O
agreement O
with O
the O
raman B-CMT
data O
that O
exclude O
the O
formation O
of O
amorphous B-DSC
or O
crystalline B-DSC
Si B-MAT
, O
even O
though O
they O
report O
the O
presence O
of O
excess O
carbon B-MAT
. O


the O
high B-CMT
resolution I-CMT
electron I-CMT
microscopy I-CMT
observations O
clearly O
indicate O
the O
formation O
of O
randomly O
oriented O
CSi B-MAT
crystals B-DSC
of O
the O
cubic B-SPL
phase O
at O
TS O
≥ O
<nUm> O
° O
C O
with O
an O
average O
size O
of O
a O
few O
nanometers O
. O


lateral O
titanium B-MAT
silicide I-MAT
growth O
and O
its O
suppression O
using O
the O
a-Si B-MAT
Ti I-MAT
bilayer B-DSC
structure I-DSC


the O
effects O
of O
internal O
oxygen O
impurities O
released O
from O
the O
TiSiO2 B-MAT
reaction O
on O
the O
lateral O
silicide B-MAT
growth O
using O
the O
a-Si B-MAT
Ti I-MAT
bilayer B-DSC
structure I-DSC
are O
presented O
. O


the O
lateral O
silicide B-MAT
growth O
can O
be O
effectively O
retarded O
by O
internal O
oxygen O
impurities O
using O
a-Si B-MAT
Ti I-MAT
bilayer B-DSC
process O
after O
silicidation B-SMT
at O
a O
temperature O
below O
<nUm> O
° O
C O
. O


compared O
with O
the O
simultaneously O
processed O
single O
Ti B-MAT
layer B-DSC
process O
, O
it O
is O
observed O
that O
both O
high O
- O
level O
oxygen O
impurities O
and O
their O
redistribution O
in O
the O
possible O
Si B-PRO
diffusion I-PRO
paths I-PRO
play O
the O
same O
important O
role O
on O
the O
suppression O
of O
the O
lateral O
silicide B-MAT
growth O
. O


finally O
, O
the O
oxygen B-PRO
- I-PRO
redistribution I-PRO
- I-PRO
dependent I-PRO
kinetics I-PRO
is O
developed O
to O
give O
a O
self O
- O
consistent O
explanation O
for O
the O
experimental O
observations O
from O
both O
the O
single O
Ti B-MAT
layer B-DSC
process O
and O
the O
a-Si B-MAT
Ti I-MAT
bilayer B-DSC
process O
. O


influence O
of O
initial O
growth O
stages O
on O
AlN B-MAT
epilayers B-DSC
grown O
by O
metal B-SMT
organic I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT


AlN B-MAT
layers B-DSC
of O
thickness O
of O
about O
<nUm> O
mm O
have O
been O
grown O
with O
AlN B-MAT
nucleation B-DSC
layers I-DSC
( O
NLs B-DSC
) O
on O
( O
<nUm> O
) O
sapphire B-MAT
substrates B-DSC
using O
metal B-SMT
organic I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
. O


increasing O
the O
AlN-NL B-MAT
deposition O
temperature O
from O
<nUm> O
to O
<nUm> O
° O
C O
has O
been O
found O
to O
have O
significant O
effect O
on O
the O
surface B-PRO
morphology I-PRO
and O
the O
structural B-PRO
quality I-PRO
of O
the O
AlN B-MAT
layers B-DSC
. O


the O
surface B-PRO
morphology I-PRO
of O
the O
AlN B-MAT
- O
NLs B-DSC
and O
the O
AlN B-MAT
layers B-DSC
has O
been O
assessed O
using O
atomic B-CMT
force I-CMT
microscopy I-CMT
( O
AFM B-CMT
) O
. O


the O
AFM B-CMT
images O
of O
the O
AlN B-MAT
- O
NLs B-DSC
reveal O
the O
coalescence O
pattern O
of O
NLs B-DSC
. O


AFM B-CMT
images O
of O
the O
AlN B-MAT
layers B-DSC
and O
the O
in-situ O
reflectance B-CMT
measurement I-CMT
disclose O
the O
surface B-PRO
morphology I-PRO
and O
the O
growth O
pattern O
of O
the O
AlN B-MAT
layers B-DSC
, O
respectively O
. O


smooth O
surface B-DSC
with O
macro-steps O
and O
terrace O
features O
has O
been O
achieved O
for O
the O
AlN B-MAT
layer B-DSC
grown O
on O
the O
NL B-DSC
deposited O
at O
<nUm> O
° O
C O
. O


the O
structural B-PRO
quality I-PRO
of O
AlN B-MAT
layers B-DSC
has O
been O
studied O
by O
high B-CMT
resolution I-CMT
x-ray I-CMT
diffraction I-CMT
and O
raman B-CMT
spectroscopy I-CMT
. O


the O
screw B-PRO
dislocation I-PRO
density I-PRO
from O
( O
<nUm> O
) O
reflection O
and O
the O
average O
edge B-PRO
dislocation I-PRO
density I-PRO
from O
( O
<nUm> O
) O
, O
( O
<nUm> O
) O
and O
( O
<nUm> O
) O
reflections O
of O
the O
AlN B-MAT
layer B-DSC
on O
NL B-DSC
deposited O
at O
<nUm> O
° O
C O
are O
estimated O
to O
be O
<nUm> O
× O
<nUm> O
cm-2 O
and O
<nUm> O
× O
<nUm> O
cm-2 O
, O
respectively O
. O


lateral B-PRO
correlation I-PRO
length I-PRO
( O
L B-PRO
) O
is O
calculated O
from O
the O
( O
<nUm> O
) O
reciprocal O
space O
mapping O
of O
the O
AlN B-MAT
layers B-DSC
and O
correlated O
with O
the O
edge B-PRO
dislocation I-PRO
density I-PRO
of O
the O
AlN B-MAT
layers B-DSC
. O


raman B-CMT
E2 O
( O
high O
) O
phonon O
mode O
indicates O
compressive O
strain O
in O
the O
AlN B-MAT
layers B-DSC
grown O
on O
the O
NLs B-DSC
deposited O
at O
various O
temperatures O
. O


from O
this O
work O
, O
it O
has O
been O
inferred O
that O
the O
uniform O
coalescence O
of O
the O
nucleation O
islands O
and O
the O
complete O
coverage O
of O
AlN-NL B-MAT
determine O
the O
surface B-PRO
morphology I-PRO
and O
the O
structural B-PRO
quality I-PRO
of O
the O
subsequently O
grown O
AlN B-MAT
layers B-DSC
. O


magneto B-PRO
- I-PRO
transport I-PRO
study O
of O
manganites B-MAT
( I-MAT
la0.75- I-MAT
x I-MAT
Gd I-MAT
x I-MAT
)Ca0.25MnO3 I-MAT


the O
La0.75-xGdxCa0.25MnO3 B-MAT
manganites I-MAT
with I-MAT
<nUm> I-MAT
≤ I-MAT
x I-MAT
≤ I-MAT
<nUm> I-MAT
are O
characterized O
by O
magnetic B-PRO
, O
electrical B-PRO
resistivity I-PRO
and O
thermoelectric B-PRO
measurements O
. O


the O
isovalent O
Gd B-MAT
substitution O
causes O
that O
the O
metal B-PRO
– I-PRO
insulator I-PRO
transition I-PRO
is O
removed O
, O
whereas O
the O
negative B-PRO
magnetoresistance I-PRO
effect I-PRO
is O
weak O
. O


the O
electrical B-PRO
resistivity I-PRO
is O
described O
by O
the O
small B-CMT
polaron I-CMT
model I-CMT
. O


influence O
of O
composition B-PRO
on O
the O
wear B-PRO
properties I-PRO
of O
boron B-MAT
carbonitride I-MAT
( O
BCN B-MAT
) O
coatings B-APL
deposited O
by O
high B-SMT
power I-SMT
impulse I-SMT
magnetron I-SMT
sputtering I-SMT


we O
investigate O
boron-carbon-nitride B-MAT
( O
BCN B-MAT
) O
coatings B-APL
deposited O
with O
high B-SMT
power I-SMT
impulse I-SMT
magnetron I-SMT
sputtering I-SMT
( O
HiPIMS B-SMT
) O
technology O
and O
conventional O
pulsed B-SMT
DC I-SMT
sputtering I-SMT
for O
their O
application O
as O
wear B-APL
resistant I-APL
coatings I-APL
. O


especially O
for O
BCN B-MAT
coatings B-APL
, O
HiPIMS B-SMT
qualifies O
as O
a O
promising O
deposition O
technology O
as O
the O
short O
pulses O
with O
very O
high O
power O
density O
result O
in O
a O
high O
ionization O
degree O
of O
the O
plasma O
species O
, O
allowing O
a O
manipulation O
of O
the O
film B-DSC
structure B-PRO
and O
properties O
. O


both O
, O
carbon B-MAT
and O
boron B-MAT
nitride I-MAT
can O
hybridize O
in O
sp2 O
or O
sp3 O
configuration O
or O
a O
mixture O
of O
both O
, O
so O
that O
coating B-APL
features O
such O
as O
hardness B-PRO
and O
coefficient B-PRO
of I-PRO
friction I-PRO
can O
be O
tailored O
to O
meet O
the O
requirements O
of O
special O
applications O
. O


we O
studied O
the O
influence O
of O
different O
carbon B-MAT
sources O
and O
deposition O
modes O
on O
the O
composition B-PRO
and O
tribological B-PRO
properties I-PRO
of O
BCN B-MAT
films B-DSC
, O
including O
microhardness B-PRO
, O
friction B-PRO
coefficient I-PRO
, O
and O
thermal B-PRO
stability I-PRO
. O


additionally O
, O
we O
investigated O
thermal O
degradation O
mechanisms O
by O
interpreting O
x-ray B-CMT
photoelectron I-CMT
spectra O
( O
XPS B-CMT
) O
. O


we O
observed O
that O
the O
application O
of O
either O
pulsed B-SMT
DC I-SMT
or O
HiPIMS B-SMT
pulse O
mode O
has O
a O
significant O
influence O
on O
the O
microhardness B-PRO
and O
thermal B-PRO
stability I-PRO
of O
the O
coatings B-APL
, O
in O
which O
HiPIMS B-SMT
mode O
generally O
provides O
higher O
hardness B-PRO
and O
better O
thermal B-PRO
stability I-PRO
. O


furthermore O
, O
we O
found O
that O
samples O
co-sputtered B-SMT
from O
B4C B-MAT
and O
graphite B-MAT
target O
show O
superior O
hardness B-PRO
and O
thermal B-PRO
stability I-PRO
compared O
to O
those O
sputtered B-SMT
reactively I-SMT
with O
acetylene O
. O


characterization O
and O
microwave B-PRO
dielectric I-PRO
properties I-PRO
of O
Mg2O6VY B-MAT
ceramic B-DSC


tetragonal-structured B-SPL
Mg2O6VY B-MAT
ceramics B-DSC
were O
prepared O
by O
conventional O
solid B-SMT
- I-SMT
state I-SMT
method I-SMT
, O
and O
their O
physical B-PRO
and O
microwave B-PRO
dielectric I-PRO
properties I-PRO
were O
investigated O
for O
the O
first O
time O
. O


the O
forming O
of O
Mg2O6VY B-MAT
main O
phase O
was O
confirmed O
by O
XRD B-CMT
diffraction I-CMT
pattern O
. O


XPS B-CMT
and O
raman B-CMT
spectrum O
were O
recorded O
to O
clarify O
the O
chemical B-PRO
states I-PRO
of I-PRO
elements I-PRO
and O
vibration B-PRO
and O
rotation B-PRO
modes I-PRO
of O
the O
specimen O
, O
respectively O
. O


In O
addition O
, O
the O
relationships O
between O
sintering B-SMT
temperature O
, O
packing B-PRO
fraction I-PRO
, O
and O
microwave B-PRO
dielectric I-PRO
properties I-PRO
in O
Mg2O6VY B-MAT
ceramics B-DSC
were O
also O
studied O
. O


the O
new O
microwave B-PRO
dielectric I-PRO
material O
Mg2O6VY B-MAT
ceramics B-DSC
sintered B-SMT
at O
<nUm> O
° O
C O
for O
4h O
has O
a O
dielectric B-PRO
constant I-PRO
( O
er B-PRO
) O
of O
∼ O
<nUm> O
, O
a O
q B-PRO
× I-PRO
f I-PRO
of O
∼ O
<nUm> O
GHz O
( O
f B-PRO
= O
<nUm> O
GHz O
) O
, O
and O
a O
tf B-PRO
∼ O
− O
<nUm> O
ppm O
/ O
° O
C O
, O
demonstrating O
a O
candidate O
for O
microwave B-APL
application I-APL
. O


investigation O
of O
the O
dosage O
effect O
on O
the O
activation O
of O
arsenic- B-SMT
and I-SMT
boron I-SMT
- I-SMT
implanted I-SMT
low I-SMT
- I-SMT
pressure I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
( O
LPCVD B-SMT
) O
amorphous B-DSC
- O
silicon B-MAT
films B-DSC


the O
dopant O
activation O
of O
arsenic- B-MAT
and O
boron B-MAT
- O
implanted B-SMT
low I-SMT
- I-SMT
pressure I-SMT
chemical I-SMT
vapor I-SMT
deposition I-SMT
( O
LPCVD B-SMT
) O
amorphous B-DSC
silicon B-MAT
( O
a-Si B-MAT
) O
films B-DSC
, O
furnace B-SMT
- I-SMT
annealed I-SMT
with O
different O
annealing B-SMT
temperatures O
has O
been O
investigated O
. O


for O
the O
arsenic B-SMT
- I-SMT
implanted I-SMT
specimens O
with O
a O
dosage O
of O
<nUm> O
× O
<nUm> O
cm-2 O
, O
an O
increase O
of O
sheet B-PRO
resistance I-PRO
was O
observed O
with O
increasing O
annealing B-SMT
temperature O
for O
the O
temperatures O
range O
from O
<nUm> O
to O
<nUm> O
° O
C O
. O


the O
reverse O
annealing B-SMT
phenomenon O
is O
attributed O
to O
dopant O
segregation O
at O
grain B-PRO
boundaries I-PRO
and O
becomes O
less O
marked O
with O
heavier O
doped B-DSC
films I-DSC
( O
<nUm> O
× O
<nUm> O
cm-2 O
) O
. O


consequently O
for O
a O
dosage O
of O
<nUm> O
× O
<nUm> O
cm-2 O
, O
the O
sheet B-PRO
resistance I-PRO
exhibits O
a O
monotonic O
decrease O
with O
increasing O
annealing B-SMT
temperature O
. O


As O
for O
the O
boron B-SMT
- I-SMT
implanted I-SMT
specimens O
, O
the O
reverse O
annealing B-SMT
phenomenon O
is O
not O
observed O
. O


it O
means O
that O
dopant O
segregation O
is O
not O
significant O
for O
boron B-SMT
- I-SMT
implanted I-SMT
films B-DSC
. O


A O
simple O
and O
efficient O
synthetic O
route O
for O
preparation O
of O
F4NaY B-MAT
upconversion O
nanoparticles B-DSC
by O
thermo B-SMT
- I-SMT
decomposition I-SMT
of O
rare O
- O
earth O
oleates O


hexagonal B-SPL
- O
phase O
F4NaY B-MAT
nanocrystals B-DSC
with O
good O
uniformity B-PRO
and O
monodispersity B-PRO
have O
been O
successfully O
obtained O
through O
a O
thermal B-SMT
decomposition I-SMT
of O
rare O
- O
earth O
oleate O
complexes O
. O


by O
co-doping O
upconverters O
( O
Yb B-MAT
/ O
Er B-MAT
, O
Yb B-MAT
/ O
Tm B-MAT
or O
Yb B-MAT
/ O
Ho B-MAT
) O
or O
downconverters O
( O
Eu B-MAT
or O
Ce B-MAT
/ O
Tb B-MAT
) O
, O
multicolor O
upconversion O
( O
UC O
) O
luminescence O
under O
<nUm> O
nm O
laser O
excitation O
or O
downconversion O
luminescence O
under O
UV O
irradiation O
could O
be O
obtained O
. O


for O
the O
first O
time O
, O
we O
systematically O
investigate O
the O
effects O
of O
various O
parameters O
including O
reaction O
temperature O
, O
time O
, O
FNa B-MAT
to O
rare O
- O
earth O
ions O
ratio O
and O
oleic O
acid O
concentration O
on O
the O
size B-PRO
, O
morphology B-PRO
, O
phase B-PRO
purity I-PRO
and O
UC B-PRO
emission I-PRO
properties I-PRO
using O
Yb B-MAT
/ O
Er B-MAT
co-doped B-DSC
F4NaY B-MAT
UC O
nanoparticles B-DSC
as O
a O
typical O
example O
. O


the O
results O
demonstrated O
that O
this O
strategy O
is O
a O
simple O
yet O
efficient O
route O
for O
fabrication O
of O
UCNPs B-DSC
with O
good O
uniformity B-PRO
and O
monodispersity B-PRO
, O
and O
enriches O
the O
synthetic O
routes O
for O
production O
of O
high O
quality O
hexagonal B-SPL
- O
phase O
F4NaY B-MAT
nanocrystals B-DSC
. O


In O
addition O
, O
a O
mesoporous B-DSC
silica B-MAT
layer B-DSC
was O
coated O
onto O
the O
hydrophobic B-PRO
F4NaY B-MAT
: I-MAT
Yb I-MAT
/ I-MAT
Er I-MAT
nanoparticles B-DSC
, O
converting O
them O
into O
hydrophilic B-PRO
ones O
, O
which O
then O
could O
be O
used O
as O
a O
potential O
luminescent B-APL
probe I-APL
for O
cell B-APL
imaging I-APL
and O
a O
promising O
nanocarrier B-APL
for O
therapeutic B-APL
drug I-APL
delivery I-APL
, O
making O
them O
a O
multifunctional O
platform O
for O
simultaneous O
imaging B-APL
and O
therapy B-APL
. O


evaluation O
of O
diamond B-MAT
- I-MAT
like I-MAT
carbon I-MAT
coatings B-APL
produced O
by O
plasma B-SMT
immersion I-SMT
for O
orthopaedic B-APL
applications I-APL


the O
purpose O
of O
the O
present O
study O
was O
to O
evaluate O
the O
properties O
of O
diamond B-MAT
- I-MAT
like I-MAT
carbon I-MAT
( O
DLC B-MAT
) O
coating B-APL
on O
Ti B-MAT
alloy B-DSC
( O
Ti B-MAT
– I-MAT
13Nb I-MAT
– I-MAT
13Zr I-MAT
) O
produced O
by O
plasma B-SMT
immersion I-SMT
. O


measurements O
of O
mechanical B-PRO
properties I-PRO
and O
corrosion B-PRO
behaviour I-PRO
were O
investigated O
. O


the O
corrosion B-CMT
studies I-CMT
( O
polarization B-CMT
test I-CMT
and O
electrochemical B-CMT
impedance I-CMT
spectroscopy I-CMT
) O
indicated O
that O
DLC B-MAT
coating B-APL
could O
improve O
corrosion B-PRO
resistance I-PRO
in O
the O
simulated O
body O
fluid O
environment O
. O


In O
vivo O
tests O
were O
carried O
out O
by O
inserting O
<nUm> O
× O
<nUm> O
mm O
diameter O
DLC B-MAT
- O
coated B-SMT
Ti B-MAT
– I-MAT
13Nb I-MAT
– I-MAT
13Zr I-MAT
cylinders B-DSC
into O
both O
muscular O
tissue O
and O
femoral O
condyles O
of O
rats O
for O
intervals O
of O
<nUm> O
and O
<nUm> O
weeks O
postoperatively O
. O


histological B-CMT
analyses I-CMT
showed O
that O
the O
DLC B-MAT
coatings B-APL
were O
well O
tolerated O
in O
both O
types O
of O
implantation B-SMT
, O
demonstrating O
the O
in O
vivo B-PRO
biocompatibility I-PRO
of O
the O
DLC B-MAT
coatings B-APL
produced O
by O
plasma B-SMT
immersion I-SMT
. O


electrical B-PRO
properties I-PRO
of O
ceria B-MAT
- O
based O
oxides B-MAT
and O
their O
application O
to O
solid B-APL
oxide I-APL
fuel I-APL
cells I-APL


ionic B-PRO
conductivities I-PRO
of O
ceria-alkaline-earth B-MAT
and O
-rare-earth B-MAT
oxide I-MAT
systems O
were O
investigated O
in O
relation O
to O
their O
structures B-PRO
, O
electrical B-PRO
conductivities I-PRO
, O
and O
reducibilities B-PRO
. O


samaria B-MAT
and O
gadolinia B-MAT
- O
doped B-DSC
ceria B-MAT
samples O
exhibited O
the O
highest O
electrical B-PRO
conductivity I-PRO
in O
ceria B-MAT
- O
based O
oxides B-MAT
because O
of O
the O
close O
ionic O
radii O
of O
sm3+ O
and O
gd3+ O
to O
that O
of O
ce4+ O
. O


the O
ionic B-PRO
conductivity I-PRO
of O
samaria- B-MAT
doped B-DSC
ceria B-MAT
was O
also O
measured O
by O
an O
ac B-CMT
four I-CMT
- I-CMT
probe I-CMT
method I-CMT
with O
electron B-APL
blocking I-APL
electrodes I-APL
. O


A O
solid B-APL
oxide I-APL
fuel I-APL
cell I-APL
with O
a O
samaria B-MAT
ceria I-MAT
electrolyte B-APL
produced O
high O
electric B-PRO
power I-PRO
, O
because O
of O
its O
highest O
oxygen B-PRO
ionic I-PRO
conductivity I-PRO
. O


the O
reduction O
of O
ceria B-MAT
electrolyte B-APL
at O
the O
fuel O
side O
could O
be O
suppressed O
by O
a O
coating B-APL
of O
stabilized O
zirconia B-MAT
thin B-DSC
film I-DSC
on O
the O
ceria B-MAT
surface B-DSC
. O


the O
anodic B-PRO
overvoltage I-PRO
of O
the O
doped B-DSC
ceria B-MAT
/ O
anode B-APL
interface B-DSC
was O
very O
small O
. O


high-surface-area B-PRO
microporous B-DSC
carbon B-MAT
as O
the O
efficient O
photocathode B-APL
of O
dye B-APL
- I-APL
sensitized I-APL
solar I-APL
cells I-APL


this O
paper O
reports O
on O
the O
application O
of O
cornstalks O
- O
derived O
high-surface-area B-PRO
microporous B-DSC
carbon B-MAT
( O
MC B-MAT
) O
as O
the O
efficient O
photocathode B-APL
of O
dye B-APL
- I-APL
sensitized I-APL
solar I-APL
cells I-APL
( O
DSCs B-APL
) O
. O


the O
photocathode B-APL
, O
which O
contains O
MC B-MAT
active O
material O
, O
vulcan B-MAT
XC I-MAT
– I-MAT
<nUm> I-MAT
carbon I-MAT
black O
conductive B-PRO
agent O
, O
and O
O2Ti B-MAT
binder O
, O
was O
obtained O
by O
a O
doctor B-SMT
blade I-SMT
method I-SMT
. O


electronic B-CMT
impedance I-CMT
spectroscopy I-CMT
( O
EIS B-CMT
) O
of O
the O
MC B-MAT
film B-DSC
uniformly O
coated B-SMT
on O
fluorine O
doped B-DSC
O2Sn B-MAT
( O
FTO B-MAT
) O
glass B-DSC
displayed O
a O
low O
charge B-PRO
- I-PRO
transfer I-PRO
resistance I-PRO
of O
<nUm> O
ocm2 O
. O


cyclic B-CMT
voltammetry I-CMT
( O
CV B-CMT
) O
analysis O
of O
the O
as-prepared B-DSC
MC B-MAT
film B-DSC
exhibited O
excellent O
catalytic B-PRO
activity I-PRO
for O
I3- B-APL
/ I-APL
I- I-APL
redox I-APL
reactions I-APL
. O


the O
DSCs B-APL
assembled O
with O
the O
MC B-MAT
film B-DSC
photocathode B-APL
presented O
a O
short B-PRO
- I-PRO
circuit I-PRO
photocurrent I-PRO
density I-PRO
( O
jsc B-PRO
) O
of O
<nUm> O
mAcm-2 O
, O
an O
open B-PRO
- I-PRO
circuit I-PRO
photovoltage I-PRO
( O
voc B-PRO
) O
of O
<nUm> O
mV O
, O
and O
a O
fill B-PRO
factor I-PRO
( O
FF B-PRO
) O
of O
<nUm> O
% O
, O
corresponding O
to O
an O
overall O
conversion B-PRO
efficiency I-PRO
of O
<nUm> O
% O
under O
AM O
<nUm> O
irradiation O
( O
100mWcm-2 O
) O
, O
which O
is O
comparable O
to O
that O
of O
DSCs B-APL
with O
Pt B-MAT
photocathode B-APL
obtained O
by O
conventional O
thermal B-SMT
decomposition I-SMT
. O


growth O
of O
InN B-MAT
films B-DSC
by O
RF B-SMT
plasma I-SMT
- I-SMT
assisted I-SMT
MBE I-SMT
and O
cluster B-SMT
beam I-SMT
epitaxy I-SMT


this O
paper O
describes O
the O
growth O
, O
structure B-PRO
, O
transport B-PRO
and O
optical B-PRO
properties I-PRO
of O
InN B-MAT
films B-DSC
grown O
by O
MBE B-SMT
using O
either O
nitrogen O
radicals O
( O
N2* O
) O
produced O
by O
a O
RF O
plasma O
source O
or O
clusters O
containing O
on O
the O
average O
<nUm> O
nitrogen O
molecules O
(N2)2000 O
. O


the O
InN B-MAT
films B-DSC
were O
grown O
at O
temperatures O
between O
<nUm> O
and O
<nUm> O
° O
C O
on O
( O
<nUm> O
) O
sapphire B-MAT
substrates B-DSC
using O
either O
an O
InN B-MAT
buffer B-DSC
or O
a O
GaN B-MAT
template O
. O


it O
was O
found O
that O
the O
conversion O
of O
the O
surface B-DSC
of O
the O
sapphire B-MAT
from O
Al2O3 B-MAT
to O
AlN B-MAT
, O
by O
exposing O
it O
to O
active O
nitrogen O
, O
is O
essential O
for O
the O
growth O
of O
single B-DSC
- I-DSC
crystalline I-DSC
InN B-MAT
films B-DSC
. O


thick B-DSC
films I-DSC
( O
<nUm> O
– O
<nUm> O
mm O
) O
, O
produced O
by O
the O
plasma O
source O
, O
tend O
to O
delaminate O
from O
the O
substrate B-DSC
presumably O
due O
to O
extreme O
compressive B-PRO
stresses I-PRO
. O


on O
the O
other O
hand O
, O
films B-DSC
adhere O
better O
if O
nitridation B-SMT
of O
the O
sapphire B-MAT
substrate B-DSC
and O
the O
low O
- O
temperature O
InN B-MAT
buffer B-DSC
are O
grown O
by O
the O
cluster O
source O
. O


all O
films B-DSC
are O
auto B-DSC
- I-DSC
doped I-DSC
n B-PRO
- I-PRO
type I-PRO
with O
carrier B-PRO
concentration I-PRO
higher O
than O
<nUm> O
× O
<nUm> O
cm-3 O
and O
best O
room O
temperature O
mobility B-PRO
<nUm> O
cm2 O
/ O
vs O
. O


the O
energy B-PRO
gap I-PRO
of O
InN B-MAT
was O
determined O
to O
be O
<nUm> O
eV O
. O


the O
plasma B-PRO
frequency I-PRO
was O
measured O
by O
infrared B-CMT
reflectivity I-CMT
and O
the O
data O
were O
used O
to O
determine O
the O
electron B-PRO
effective I-PRO
mass I-PRO
( O
<nUm> O
m0 O
) O
. O


we O
found O
that O
the O
measured O
optical B-PRO
gap I-PRO
and O
the O
electron B-PRO
effective I-PRO
mass I-PRO
are O
in O
qualitative O
agreement O
with O
the O
predictions O
of O
the O
k*p B-CMT
method I-CMT
for O
direct B-PRO
semiconductors I-PRO
. O


codoping O
effect O
of O
O O
into O
Er B-MAT
- O
doped B-DSC
InP B-MAT
epitaxial B-DSC
layers I-DSC
grown O
by O
OMVPE B-SMT


the O
temperature O
dependence O
of O
ESR B-CMT
in O
InP B-MAT
: I-MAT
Er I-MAT
and O
the O
O O
codoping O
effect O
in O
InP B-MAT
: I-MAT
Er I-MAT
have O
been O
studied O
by O
x-band B-CMT
ESR I-CMT
measurement O
at O
low O
temperature O
. O


the O
ESR B-CMT
at O
around O
g O
= O
<nUm> O
, O
which O
corresponds O
to O
er3+ O
site O
with O
td O
symmetry O
, O
lost O
it O
's O
intensity O
quickly O
as O
the O
temperature O
is O
increased O
and O
disappeared O
above O
12K O
. O


the O
temperature O
dependence O
of O
the O
integrated O
intensity O
turned O
out O
to O
be O
different O
from O
simple O
curie B-CMT
law I-CMT
. O


the O
intensity O
of O
the O
ESR B-CMT
at O
around O
g O
= O
<nUm> O
decreased O
as O
O O
is O
codoped B-DSC
into O
InP B-MAT
: I-MAT
Er I-MAT
. O


No O
new O
ESR B-CMT
was O
observed O
in O
O O
codoped B-DSC
InP B-MAT
: I-MAT
Er I-MAT
in O
contrast O
to O
the O
results O
of O
O O
codoped B-DSC
AsGa B-MAT
: I-MAT
Er I-MAT
. O


these O
results O
are O
discussed O
in O
connection O
with O
the O
O O
codoping O
effect O
of O
photoluminescence B-CMT
spectra O
. O


galvanic B-SMT
deposition I-SMT
of O
cadmium B-MAT
sulfide I-MAT
thin B-DSC
films I-DSC


A O
technique O
is O
presented O
for O
the O
deposition O
of O
high O
quality O
cadmium B-MAT
sulfide I-MAT
( O
CdS B-MAT
) O
thin B-DSC
films I-DSC
onto O
O2Sn B-MAT
substrates B-DSC
by O
a O
galvanic B-SMT
method I-SMT
. O


single B-DSC
phase I-DSC
films I-DSC
were O
deposited O
in O
a O
bath O
of O
cadmium B-MAT
chloride I-MAT
and O
sodium O
thiosulfate O
at O
pH O
= O
<nUm> O
and O
temperature O
= O
<nUm> O
° O
C O
at O
a O
growth O
rate O
of O
<nUm> O
nm O
/ O
min O
. O


In O
the O
pH O
range O
of O
<nUm> O
to O
<nUm> O
, O
the O
deposition O
rate O
is O
sensitive O
to O
cadmium B-MAT
chloride I-MAT
concentration O
. O


At O
higher O
pH O
the O
deposition O
rate O
is O
very O
low O
while O
at O
lower O
pH O
mixed O
phase O
films B-DSC
were O
obtained O
and O
homogeneous O
US O
formation O
occurred O
in O
the O
bath O
. O


the O
structural B-PRO
and O
optical B-PRO
properties I-PRO
of O
the O
US O
films B-DSC
are O
also O
presented O
and O
are O
comparable O
to O
films B-DSC
deposited O
by O
other O
methods O
. O


CdS B-MAT
/ O
CdTe B-MAT
solar B-APL
cells I-APL
with O
efficiencies B-PRO
over O
<nUm> O
% O
were O
fabricated O
using O
evaporated B-SMT
CdTe B-MAT
to O
demonstrate O
the O
utility O
of O
US O
films B-DSC
deposited O
by O
this O
simple O
technique O
. O


the O
galvanic B-SMT
deposition I-SMT
technique O
is O
useful O
in O
laboratory O
settings O
with O
limited O
deposition O
hardware O
and O
limited O
chemical O
waste O
disposal O
facilities O
. O


structure B-PRO
development O
during O
superplastic B-SMT
deformation I-SMT
of O
an O
Al-Mg-Sc-Zr B-MAT
alloy B-DSC


the O
Al B-MAT
- I-MAT
<nUm> I-MAT
Mg I-MAT
- I-MAT
<nUm> I-MAT
Sc I-MAT
- I-MAT
<nUm> I-MAT
Zr I-MAT
( I-MAT
wt. I-MAT
% I-MAT
) I-MAT
alloy B-DSC
prepared O
using O
equal B-SMT
- I-SMT
channel I-SMT
angular I-SMT
pressing I-SMT
exhibits O
superplastic B-PRO
behavior I-PRO
in O
the O
temperature O
range O
from O
<nUm> O
to O
773K O
at O
strain O
rates O
of O
<nUm> O
− O
<nUm> O
s-1 O
. O


microstructure B-PRO
investigation O
using O
the O
electron B-CMT
back I-CMT
- I-CMT
scattered I-CMT
diffraction I-CMT
revealed O
a O
gradual O
elimination O
of O
low O
- O
angle O
boundaries O
and O
slight O
grain O
growth O
during O
superplastic B-SMT
deformation I-SMT
. O


the O
surfaces B-DSC
of O
samples O
slightly O
strained O
under O
superplastic O
conditions O
were O
investigated O
using O
light B-CMT
microscopy I-CMT
, O
electron B-CMT
scanning I-CMT
microscopy I-CMT
and O
atom B-CMT
force I-CMT
microscopy I-CMT
. O


an O
inhomogeneous O
distribution O
of O
grain B-PRO
- I-PRO
boundary I-PRO
sliding I-PRO
was O
observed O
. O


facile B-SMT
synthesis I-SMT
of O
nitrogen O
- O
doped B-DSC
porous I-DSC
carbon B-MAT
for O
supercapacitors B-APL


A O
very O
simple O
, O
activation O
- O
free O
method O
for O
preparing O
nitrogen O
- O
doped B-DSC
porous I-DSC
carbon B-MAT
with O
high O
surface B-PRO
area I-PRO
for O
supercapacitors B-APL
by O
direct B-SMT
pyrolysis I-SMT
of O
a O
nitrogen O
- O
containing O
organic O
salt O
, O
ethylenediamine O
tetraacetic O
acid O
( O
EDTA O
) O
disodium O
magnesium O
salt O
, O
in O
an O
inert O
atmosphere O
is O
presented O
. O


As O
the O
pyrolysis B-SMT
temperature O
increases O
from O
<nUm> O
to O
<nUm> O
° O
C O
, O
both O
the O
BET B-PRO
surface I-PRO
area I-PRO
and O
pore B-PRO
volume I-PRO
of O
the O
disodium O
magnesium O
EDTA O
- O
derived O
carbons B-MAT
increase O
and O
reach O
up O
to O
<nUm> O
m2 O
g-1 O
and O
<nUm> O
cm3 O
g-1 O
, O
respectively O
, O
while O
the O
nitrogen O
content O
decreases O
from O
<nUm> O
at. O
% O
to O
<nUm> O
at. O
% O
. O


the O
carbon B-MAT
obtained O
at O
a O
moderate O
pyrolysis B-SMT
temperature O
of O
<nUm> O
° O
C O
possesses O
a O
balanced O
surface B-PRO
area I-PRO
( O
<nUm> O
m2 O
g-1 O
) O
and O
nitrogen O
content O
( O
<nUm> O
at. O
% O
) O
, O
exhibits O
high O
capacitance B-PRO
( O
<nUm> O
F O
g-1 O
) O
, O
good O
rate B-PRO
capability I-PRO
( O
<nUm> O
F O
g-1 O
at O
<nUm> O
A O
g-1 O
) O
and O
cycle B-PRO
durability I-PRO
in O
<nUm> O
mol O
L-1 O
KOH O
aqueous O
electrolytes O
. O


charge B-PRO
carrier I-PRO
transport I-PRO
in O
gate-voltage-controlled O
heteroepitaxial B-DSC
indium B-MAT
arsenide I-MAT
layers B-DSC


the O
charge B-PRO
carrier I-PRO
transport I-PRO
coefficients I-PRO
of O
AsIn B-MAT
epilayers B-DSC
, O
grown O
on O
semi-insulating B-PRO
AsGa B-MAT
by O
chemical B-SMT
vapor I-SMT
phase I-SMT
heteroepitaxy I-SMT
, O
were O
investigated O
by O
means O
of O
gate-voltage-controlled B-CMT
electrical I-CMT
and I-CMT
galvanomagnetic I-CMT
measurements I-CMT
made O
on O
metal B-PRO
- O
oxide B-MAT
- O
semiconductor B-PRO
structures O
. O


the O
capacitance B-PRO
versus I-PRO
gate I-PRO
voltage I-PRO
dependence O
of O
such O
structures O
indicates O
that O
in O
the O
extrinsic O
temperature O
region O
the O
epilayer B-DSC
surfaces I-DSC
are O
accumulated O
for O
vg O
= O
<nUm> O
and O
flat O
- O
band O
conditions O
apply O
for O
vg O
≈ O
− O
<nUm> O
V O
. O


it O
is O
shown O
that O
if O
the O
epilayer B-DSC
thickness O
is O
corrected O
for O
depletion O
then O
the O
epilayer B-DSC
hall B-PRO
coefficients I-PRO
and O
conductivities B-PRO
are O
independent O
of O
vg O
and O
have O
bulk B-DSC
- O
like O
values O
and O
that O
the O
electron B-PRO
mobility I-PRO
has O
its O
bulk O
- O
like O
value O
and O
is O
independent O
of O
vg O
in O
depletion O
. O


In O
accumulation O
, O
the O
epilayer B-DSC
properties O
are O
considered O
in O
terms O
of O
a O
composite B-DSC
two B-CMT
- I-CMT
layer I-CMT
model I-CMT
: O
a O
bulk B-DSC
- O
like O
region O
of O
thickness O
db O
with O
an O
average O
flat B-PRO
- I-PRO
band I-PRO
electron I-PRO
density I-PRO
nb I-PRO
= O
<nUm> O
× O
<nUm> O
cm-3 O
and O
mobility B-PRO
mb I-PRO
= O
<nUm> O
× O
<nUm> O
cm2 O
V-1 O
s-1 O
and O
a O
surface B-DSC
- O
like O
region O
of O
thickness O
ds O
with O
a O
gate O
- O
voltage O
- O
dependent O
surface B-PRO
charge I-PRO
density I-PRO
nsds I-PRO
and O
mobility B-PRO
ms I-PRO
where O
nsds B-PRO
( O
+ O
<nUm> O
V O
) O
= O
<nUm> O
× O
<nUm> O
cm-2 O
and O
ms(+30 B-PRO
V I-PRO
) I-PRO
= O
<nUm> O
× O
<nUm> O
cm2 O
V-1 O
s-1 O
. O


the O
monotonic O
decrease O
in O
ms B-PRO
with O
vg O
is O
attributed O
to O
scattering O
of O
the O
conduction O
electrons O
by O
localized O
surface O
charges O
which O
decrease O
the O
specularity B-PRO
of O
the O
epilayer B-DSC
surfaces I-DSC
. O
