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United States Patent | 6,103,599 |
Henley , et al. | August 15, 2000 |
**Please see images for: ( Certificate of Correction ) ** |
The present invention provides a multilayered wafer 10 such as an SOI wafer having a novel implanted layer. This implanted layer is removable and provides a resulting wafer having a substantially uniform surface. The wafer includes a bulk substrate 11 and an insulating layer 13 formed overlying the bulk substrate 15. A film of semiconductor material is formed overlying the insulating layer. Surface non-uniformities are formed overlying and in the film of semiconductor material. The non-uniformities are implanted, and are bordered by a substantially uniform interface 17 at a selected depth underlying the surface non-uniformities. The substantially uniform interface provides a substantially uniform resulting surface for the SOI wafer.
Inventors: | Henley; Francois J. (Los Gatos, CA), Cheung; Nathan (Albany, CA) |
---|---|
Assignee: |
Silicon Genesis Corporation
(Los Gatos,
CA)
|
Family ID: | 26732223 |
Appl. No.: | 09/089,931 |
Filed: | June 3, 1998 |
Current U.S. Class: | 438/459; 257/E21.219; 257/E21.568; 438/458; 438/694; 438/770; 438/977 |
Current CPC Class: | H01L 21/30604 (20130101); H01L 21/76254 (20130101); Y10S 438/977 (20130101) |
Current International Class: | H01L 21/02 (20060101); H01L 21/306 (20060101); H01L 21/70 (20060101); H01L 21/762 (20060101); H01L 021/00 () |
Field of Search: | ;438/528,459,974,977,766,770,697,745,756,723,513,455,458,406,4,694 |
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